Image sensor matrix, electronic device and imaging method

Abstract

The present invention provides an image sensor matrix, an electronic device and an imaging method, which relate to the field of image acquisition technology, and include a substrate layer and at least one image acquisition unit, wherein the image acquisition units are respectively welded and fixed on the substrate layer, and each of the image acquisition units includes at least two image sensors; the depth of field range of each of the image sensors is respectively located in an independent region; the adjacent image acquisition units are closely arranged on the same horizontal projection plane; and the arrangement heights of each of the image sensors from the lens are progressively distributed in a step-like manner. The present invention can obtain the maximum depth of field distance for clear imaging of the photographed target by sequentially arranging the depth of field widths between the image sensors end to end, and at the same time, in conjunction with the image fusion technology, it is conducive to meeting the requirements for long-distance or ultra-long-distance shooting of the photographed target object.

Description

Technical Field

[0001] The present invention relates to the field of image acquisition technology, and in particular to an image sensor matrix, electronic equipment and an imaging method. Background Art

[0002] When taking a photo, the part of the photo that can be clearly imaged between the object closest to the camera and the object farthest away is called "depth of field", that is, "depth of field" refers to the relatively clear imaging range before and after the camera's focus point. In daily communication, we often use "blur" to describe depth of field. Usually, when the image in the photo is in the blurred range, the scenery around the imaging subject is often visually blurred. The benefits of this effect are obvious. It can make the image of the subject look more prominent in the picture, thus helping us understand the theme of the picture and the photographer's shooting intention.

[0003] Contrary to the concept of blur, within a certain distance before and after the focus, as long as the blur of the image does not exceed the recognition ability of the naked eye, the image within this range can be considered clear, which also means that the object that can be clearly imaged is within the depth of field of the shooting device. It can be seen that the "depth of field" is a distance range from unclear to clear in the photo, which is the lens imaging gradually generated over the distance length.

[0004] The depth of field of photos taken by existing camera imaging devices is usually within a fixed range, and it is difficult to expand the depth of field range, making it difficult to clearly observe the imaging details of objects farther away from the lens in photos taken by existing cameras. This is not conducive to achieving macro high-definition shooting of short-distance target objects, nor is it conducive to shooting and imaging long-distance or ultra-long-distance target objects, resulting in great difficulty in clearly capturing optical images. Summary of the invention

[0005] The purpose of the present invention is to provide an image acquisition unit matrix composed of multiple image sensors with partially overlapping or sequential depth of field ranges, which can expand the length range of the depth of field or enhance the imaging clarity of the short-distance depth of field, and at the same time, supplemented by an imaging method that fuses multiple clear images, which can solve the current problem of blurred imaging when shooting long-distance or ultra-long-distance target objects.

[0006] On the one hand, to achieve the above-mentioned purpose, the present invention provides an image sensor matrix, including a substrate layer and at least one image acquisition unit, the image acquisition units are respectively welded and fixed on the substrate layer, each of the image acquisition units includes at least two image sensors, the image sensor can capture the light entering the lens and form an inverted and inverted imaging pattern, the image sensor converts the sensed light signal into an electrical signal, and transmits the electrical signal to a signal processing unit for processing to form a photographic image, by adopting a hollow hard cylindrical tubular lens, the lens can serve as a channel for the light reflected from the surface of the object to be photographed to pass through the optical lens, and realizes dust and impact protection for the optical lens, reduces light The risk of damage to the optical lens. When light enters the interior of the lens, it will gradually pass through the optical lens and be refracted by different lenses to form an image. The optical lens can form an inverted real image. A reflector is fixed on the inner wall of the lens at an angle of 45° to the horizontal plane. The reflector can form an upright virtual image by reflecting the real image, which is convenient for the photographer to observe the image. The optical lens is composed of multiple transparent refractors. The multiple transparent refractors are fixedly arranged on the inner wall in pairs with cross sections parallel to each other. Each transparent refractor includes at least one spherical surface, which is a part of the spherical surface and has at least two side surfaces that can form a perfect circular projection on the horizontal projection plane. The transparent refractor includes a spherical surface and a plane or includes two spherical surfaces with unequal curvatures. According to the actual use occasion; the depth of field range of each image sensor is located in an independent area, and the depth of field range formed by each image sensor in the process of shooting an object can be adjusted by adjusting the relative height of each image sensor, so that the clarity of different positions of the imaging area can be adjusted by adjusting the arrangement or superposition of the depth of field range; the adjacent image acquisition units are closely arranged on the same horizontal projection plane; the arrangement height of each image sensor from the lens is progressively distributed in a step-like manner, and the image acquisition unit is fixedly connected to one side of the substrate layer, so that each image acquisition unit can have the same reference height, which is convenient for adjusting the arrangement height between different image sensors during the installation of the image acquisition unit. The image acquisition unit and the lens constitute a sensor array capable of expanding the depth of field, so as to improve the clarity of the final image. The substrate layer is a flat plate with uniform thickness. The substrate layer is a flat plate formed of an organic material. The substrate layer with uniform thickness only provides a connecting substrate for the image sensor and does not provide gain for adjusting the depth of field position of the image sensor. The substrate layer with uniform thickness is conducive to directly determining the depth of field range through the thickness of the image sensor itself. The organic material is one or a combination of several of phenolic resin, glass fiber, epoxy resin, polyimide, and polytetrafluoroethylene. The substrate layer made of organic material is more wear-resistant, which is conducive to maintaining the supporting performance of the substrate layer.

[0007] As a further solution of the present invention: the substrate layer is a flat plate formed of an organic material or an inorganic material, and the inorganic material is metal aluminum or ceramics. The thermal expansion coefficient of metal aluminum or ceramics is small, which is beneficial to improving the reliability of the sensor system. At the same time, metal aluminum or ceramics have higher compressive strength and higher temperature tolerance than the substrate layer made of organic materials, which is beneficial to extending the service life of the sensor system.

[0008] As a further solution of the present invention, the image acquisition unit includes a first image sensor, a second image sensor, a third image sensor and a fourth image sensor; the arrangement heights of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor are increased or decreased in a clockwise direction, and when the arrangement heights of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor are decreased in a clockwise direction, the distances of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor from the optical center of the lens increase in sequence; the arrangement height difference between the first image sensor and the second image sensor is ,and >0; the height difference between the second image sensor and the third image sensor is ,and >0; the height difference between the third image sensor and the fourth image sensor is ,and >0, in order to facilitate the fixed connection between the first image sensor, the second image sensor, the third image sensor and the fourth image sensor and the substrate layer or the dielectric layer, >= => =>0.

[0009] As a further solution of the present invention: the depth of field ranges of two adjacent image sensors located on the same matrix array partially overlap, the depth of field range of the first image sensor is DOF1, DOF1 is the distance AB from point A to point B; the depth of field range of the second image sensor is DOF2, DOF2 is the distance CD from point C to point D; the depth of field range of the third image sensor is DOF3, DOF3 is the distance EF from point E to point F; the depth of field range of the fourth image sensor is DOF4, DOF4 is the distance GH from point G to point H; the overlapping range of the depth of field of the first image sensor and the second image sensor is the distance CB from point C to point B, and CB>0; the overlapping range of the depth of field of the second image sensor and the third image sensor is the distance ED from point E to point D, and ED>0; the overlapping range of the depth of field of the third image sensor and the fourth image sensor is the distance GF from point G to point F, and GF>0.

[0010] The total depth of field DOF = DOF1 + DOF2 + DOF3 + DOF4 - CB - ED - GF. By adjusting the overlapping length of each overlapping part, the depth of field range superimposed by different image sensors can be adjusted, which is beneficial to obtaining an image fusion effect with a smaller object distance and better imaging clarity. By making the depth of field range of image sensors with different focal lengths partially overlap, the depth of field range of the traditional single image sensor can be effectively expanded to obtain an image with a larger depth of field. Therefore, the larger the overlapping area of ​​the depth of field, the clearer the object image will be after image fusion. When the depths of field of multiple image sensors completely overlap with each other, a clear shooting effect of ultra-short distance objects can be obtained, and the ultra-short distance can be within 5 cm.

[0011] As a further solution of the present invention, the depth of field ranges of two adjacent image sensors on the same matrix array are continuous from beginning to end; the depth of field range of the first image sensor is DOF1', DOF1' is the distance A'B' from point A' to point B', the depth of field range of the second image sensor is DOF2', DOF2' is the distance C'D' from point C' to point D'; the depth of field range of the third image sensor is DOF3', DOF3' is the distance E'F' from point E' to point F'; the depth of field range of the fourth image sensor is DOF4', DOF4' is the distance G'H' from point G' to point H'; the total depth of field DOF'=DOF1'+DOF2'+DOF3'+DOF4'=A'B'+C'D'+E'F'+G'H', and by setting the depth of field ranges between different image sensors to be continuous from beginning to end in sequence, the maximum depth of field range under the condition of a certain number of image sensors can be obtained, which is conducive to shooting long-distance or ultra-long-distance target objects.

[0012] As a further solution of the present invention, a first microlens is formed on the top of the first image sensor, a second microlens is fixed on the top of the second image sensor, the vertical height of the second microlens is higher than the first microlens, and the top of the first microlens is partially shielded to the edge, which can reduce the dependence of the image sensor on the area of ​​the substrate layer, and by arranging the image sensors in a stepped height in the depth direction, it is beneficial to reduce the occupation of the integrated device area based on the substrate layer, a third microlens is fixed on the top of the third image sensor, and a fourth microlens is fixed on the top of the fourth image sensor, the height of the fourth microlens is higher than the third microlens, and the welding height of the third microlens is higher than the height of the second microlens, and the projection contours of the first microlens, the second microlens, the third microlens and the fourth microlens on the horizontal projection plane are continuous and closely connected, which is beneficial to continuously gather and transmit the light entering the lens; the first microlens, the second microlens, the third microlens and the fourth microlens are convex lenses with equal horizontal projection areas, and by fixing a plurality of image sensors with mutually spaced and staggered tops on the substrate layer, the device tiling area of ​​the image sensor in the horizontal direction can be reduced, and the occupation of space can be optimized.

[0013] As a further solution of the present invention, a first chamfered support portion is formed at the connection between the top of the second image sensor and the second microlens, and a second chamfered support portion is formed at the connection between the third image sensor and the third microlens. The first chamfered support portion and the second chamfered support portion can respectively increase the support area of ​​the image sensor on the bottom of the microlens, thereby improving the installation stability and use reliability of the microlens.

[0014] As a further solution of the present invention, the projection width of the first chamfered support portion on the horizontal projection plane is the width of the area blocked by the second microlens on the top of the first microlens when vertically projected, and the projection width of the first chamfered support portion on the horizontal projection plane does not exceed one quarter of the projection width of the first microlens on the horizontal projection plane. By limiting the blocked area between microlenses, the image sensor's ability to collect optical images can be guaranteed while optimizing the image sensor's integration space.

[0015] In a second aspect, an electronic device is also provided, which includes an image sensor matrix as described in the above scheme; the electronic device also includes a lens and a body detachably connected to one end of the lens; the body is fixedly connected to the substrate layer inside facing the lens; a shutter button is connected to the top of the body, and an optical lens is installed inside the lens. By using the electronic device, optical imaging of the target object can be performed, which facilitates the acquisition of the image of the target object.

[0016] In a third aspect, an imaging method is also provided, which is applied to the electronic device as described above, and the imaging method includes:

[0017] Adjusting the height of the image sensor in the image acquisition unit. By adjusting the height of the image sensor, the amount of light entering the lens captured by different image sensors can be adjusted;

[0018] The highly adjusted image acquisition unit is mounted on the electronic device, and the lens is directed toward the target object, so that the light reflected by the target object forms an inverted real image in the electronic device, so as to ensure the integrity of the image captured of the target object;

[0019] The electronic device is rotated 360° along the axis center of the lens and the image is collected synchronously, so that the image collection structure in the electronic device can complete the all-round collection of the image of the same target object, which is conducive to obtaining clear images of the target object at different angles;

[0020] Evaluate the sharpness of the image to obtain the clarity of the target object and facilitate the selection of images with different clarity;

[0021] Selecting multiple images to fuse to obtain a clear image of the object can obtain an image with a larger depth of field than a single image sensor.

[0022] As a further solution of the present invention: the method for adjusting the height of the image acquisition unit is any one of wafer thinning, setting a dielectric layer between the substrate layer and the image acquisition unit, or a combination of both methods. The thickness of the image sensor included in each image acquisition unit is thinned by wafer thinning technology, which can improve the accuracy of adjusting the focal length of the image sensor compared to adjusting the thickness of the substrate layer and adding the dielectric layer, and is also beneficial to improving the adjustment accuracy of the depth of field width of the image sensor.

[0023] As a further solution of the present invention: the dielectric layer includes a plurality of dielectric plates which are tightly and fixedly connected end to end in sequence, the plurality of dielectric plates are respectively a first dielectric plate, a second dielectric plate, a third dielectric plate, a fourth dielectric plate, a fifth dielectric plate and a sixth dielectric plate, the thicknesses of the first dielectric plate, the second dielectric plate, the third dielectric plate, the fourth dielectric plate, the fifth dielectric plate and the sixth dielectric plate are increased or decreased in sequence, the first dielectric plate, the second dielectric plate, the third dielectric plate, the fourth dielectric plate, the fifth dielectric plate and the sixth dielectric plate are respectively connected to image sensors of different heights, so as to further adjust the connection height of each image sensor on the substrate layer, and by setting depressions of different depths, the depth of field range of the partition can be adjusted by connecting each depression with the image sensor, and when a flat substrate layer with uniform thickness is used, the substrate layer provides a connecting substrate for the image sensor, and the substrate layer with uniform thickness can be connected to the image sensor through the image sensor. The thickness of the sensor itself directly determines the depth of field width, which improves the flexibility of each image sensor in determining the depth of field width; the substrate layer is made of organic material or inorganic material, and the organic material can be any one of phenolic resin, glass fiber, epoxy resin, polyimide, and polytetrafluoroethylene. The substrate layer made of organic material is more wear-resistant, which is beneficial to maintaining the supporting performance of the substrate layer; when the substrate layer is made of metal aluminum or ceramic material, due to the small thermal expansion coefficient of metal aluminum or ceramic, the risk of deformation of the substrate layer can be reduced, which is beneficial to improving the reliability of the sensor system. At the same time, metal aluminum or ceramic has higher compressive strength and higher temperature tolerance than the substrate layer made of organic material, which is beneficial to extend the service life of the sensor system. The image sensor models include Sony IMX989, IMX800, IMX707, IMX610, IMX591, and IMX500.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] 1. The present invention adjusts the overlapping length of the overlapping depth of field of each image sensor, which is beneficial to obtaining a fused image effect with a smaller object distance and better imaging clarity. By adjusting the connection height of the image sensors to make the partial depth of field range of each image sensor overlap multiple times, the depth of field width of a single image sensor can be effectively expanded, thereby obtaining an image with a larger depth of field distance; when multiple image sensors are used and the depth of field ranges of each image sensor are made to completely overlap, a clear shooting effect of ultra-short distance objects can be obtained.

[0026] 2. The present invention can obtain the maximum depth of field distance for clear imaging of the target object by arranging the depth of field widths of each image sensor in sequence end to end. At the same time, combined with image fusion technology, it is helpful to meet the needs of long-distance or ultra-long-distance shooting of the target object.

[0027] 3. The present invention can reduce the degree of dependence of the image sensor on the area of ​​the substrate layer 6 by partially blocking the top of the adjacent microlens by each microlens in turn. By arranging the image sensor in a stepped height in the depth direction, it is beneficial to reduce the area occupied by the integrated device based on the substrate layer 6 and optimize the arrangement space of the image acquisition unit 7. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a structural diagram of an electronic device of the present invention;

[0029] Figure 2 It is a partial exploded view of the connection structure of the image acquisition unit of the present invention;

[0030] Figure 3 A structural diagram of an image acquisition unit in accordance with a specific embodiment of the present invention;

[0031] Figure 4 It is a front view of the structure of an image acquisition unit in a specific embodiment of the present invention;

[0032] Figure 5 It is a schematic diagram of partially overlapping depth of field of the image sensor of the present invention;

[0033] Figure 6 A schematic diagram of continuous depth of field of the image sensor of the present invention;

[0034] Figure 7 A structural diagram of a specific implementation of the stacking arrangement of image sensors of the present invention;

[0035] Figure 8 A top view of a stacked arrangement of image sensors of the present invention;

[0036] The descriptions of the reference numerals are as follows:

[0037] 1-lens; 2-medium layer; 201-first medium plate; 202-second medium plate; 203-third medium plate; 204-fourth medium plate; 205-fifth medium plate; 206-sixth medium plate; 3-shutter button; 4-optical lens; 5-body; 6-substrate layer; 7-image acquisition unit; 701-first image sensor; 7011-first microlens; 702-second image sensor; 7021-second microlens; 703-third image sensor; 7031-third microlens; 704-fourth image sensor; 7041-fourth microlens. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0039] Embodiment 1:

[0040] like Figure 2 The figure shows a partial exploded view of the image acquisition unit connection structure of the present invention, which provides an image sensor matrix, including a substrate layer 6 and at least one image acquisition unit 7, the image acquisition unit 7 is welded and fixed on the side of the substrate layer 6, each image acquisition unit 7 includes at least two image sensors, the image sensor can capture the light entering the lens 1 and form an inverted and upside-down imaging pattern, the image sensor converts the sensed light signal into an electrical signal, and transmits the electrical signal to the signal processing unit for processing to form a photographic image, by adopting a hollow hard cylindrical tubular lens 1, the lens 1 can serve as a channel for the light reflected by the surface of the object to pass through the optical lens 4, and realize dust and impact protection for the optical lens 4, reducing the risk of damage to the optical lens 4, when the light enters the interior of the lens 1, it will gradually pass through the optical lens 4 and be refracted by different lenses to form an image, the optical lens 4 can form an inverted real image, the inner wall of the lens 1 is fixed with a reflector at an angle of 45° to the horizontal plane, the reflector can form an upright virtual image by reflecting the real image, which is convenient for the photographer to observe the image.

[0041] Preferably, the optical lens 4 is composed of a plurality of transparent refractors, which are fixedly arranged on the inner wall in sequence with their cross sections parallel to each other, each transparent refractor includes at least one spherical surface, which is a part of the spherical surface and has at least two side surfaces that can form a perfect circular projection on the horizontal projection plane, and the transparent refractor includes a spherical surface and a plane or includes two spherical surfaces with unequal curvatures, so as to facilitate the actual use occasion; the depth of field range of each image sensor is located in an independent area, and the depth of field range formed by each image sensor in the process of shooting an object can be adjusted by adjusting the relative height of each image sensor, so as to facilitate the use of The clarity of different positions in the imaging area is adjusted by adjusting the arrangement or superposition of the depth of field range; adjacent image acquisition units 7 are closely arranged on the same horizontal projection plane; the arrangement heights of the image sensors from the lens are progressively distributed in a step-like manner, and the image acquisition units 7 are fixedly connected to one side of the substrate layer 6, so that the image acquisition units 7 have the same reference height, which is convenient for adjusting the arrangement height difference between different image sensors during the installation of the image acquisition units 7, so as to obtain a depth of field width with a progressive length range. The image acquisition units 7 and the lens 1 constitute a sensor array that can expand the depth of field range, which is convenient for improving the clarity of the final image.

[0042] Preferably, the substrate layer 6 is a flat plate with uniform thickness, and the substrate layer 6 is a flat plate formed of organic material. The substrate layer 6 with uniform thickness only provides a connecting substrate for the image sensor, and does not provide gain for adjusting the depth of field position of the image sensor. The substrate layer 6 with uniform thickness is beneficial to directly determining the depth of field range through the thickness of the image sensor itself; the organic material is one or a combination of several of phenolic resin, glass fiber, epoxy resin, polyimide, and polytetrafluoroethylene materials. The substrate layer 6 made of organic material is more wear-resistant, which is beneficial to maintaining the supporting performance of the substrate layer 6.

[0043] Preferably, the substrate layer 6 is made of an inorganic material such as metal aluminum or ceramics. The thermal expansion coefficient of metal aluminum or ceramics is small, which is beneficial to improving the reliability of the sensor system. At the same time, metal aluminum or ceramics have higher compressive strength and higher temperature tolerance than the substrate layer 6 made of organic materials, which is beneficial to extending the service life of the sensor system.

[0044] like Figure 3The figure shows a structural diagram of an image acquisition unit according to a specific embodiment of the present invention. The image acquisition unit 7 comprises a first image sensor 701, a second image sensor 702, a third image sensor 703 and a fourth image sensor 704. The arrangement heights of the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 are increased or decreased in a clockwise direction. When the arrangement heights of the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 are decreased in a clockwise direction, the distances between the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 and the optical center of the lens 1 increase in sequence.

[0045] like Figure 4 FIG. 1 is a front view of an image acquisition unit structure in a specific embodiment of the present invention. The arrangement height difference between the first image sensor 701 and the second image sensor 702 is , and>0; the height difference between the second image sensor 702 and the third image sensor 703 is ,and >0; the height difference between the third image sensor 703 and the fourth image sensor 704 is ,and >0, in order to facilitate the fixed connection between the first image sensor 701, the second image sensor 702, the third image sensor 703 and the fourth image sensor 704 and the substrate layer 6 or the dielectric layer 2, >= => =>0.

[0046] like Figure 5The figure shows a schematic diagram of partially overlapping depth of field of image sensors of the present invention, where the depth of field ranges of two adjacent image sensors located on the same matrix array partially overlap, the depth of field range of the first image sensor 701 is DOF1, DOF1 is the distance AB from point A to point B; the depth of field range of the second image sensor 702 is DOF2, DOF2 is the distance CD from point C to point D; the depth of field range of the third image sensor 703 is DOF3, DOF3 is the distance EF from point E to point F; the depth of field range of the fourth image sensor 704 is DOF4, DOF4 is the distance GH from point G to point H; the overlapping range of the depth of field of the first image sensor 701 and the second image sensor 702 is the distance CB from point C to point B, and CB>0; the overlapping range of the depth of field of the second image sensor 702 and the third image sensor 703 is the distance ED from point E to point D, and ED>0; the overlapping range of the depth of field of the third image sensor 703 and the fourth image sensor 704 is the distance GF from point G to point F, and GF>0.

[0047] The total depth of field DOF = DOF1 + DOF2 + DOF3 + DOF4 - CB - ED - GF. By adjusting the overlapping length of each overlapping part, the depth of field range superimposed by different image sensors can be adjusted, which is beneficial to obtaining an image fusion effect with a smaller object distance and better imaging clarity. By making the depth of field range of image sensors with different focal lengths partially overlap, the depth of field range of the traditional single image sensor can be effectively expanded to obtain an image with a larger depth of field. Therefore, the larger the overlapping area of ​​the depth of field, the clearer the object image will be after image fusion. When the depths of field of multiple image sensors completely overlap with each other, a clear shooting effect of ultra-short distance objects can be obtained, and the ultra-short distance can be within 5 cm.

[0048] Embodiment 2:

[0049] like Figure 6 The figure shows a schematic diagram of continuous depth of field of the image sensor of the present invention, which is different from the above-mentioned embodiment in that: the depth of field ranges of the two adjacent image sensors on the same matrix array are continuous from beginning to end; the depth of field range of the first image sensor 701 is DOF1', DOF1' is the distance A'B' from point A' to point B', the depth of field range of the second image sensor 702 is DOF2', DOF2' is the distance C'D' from point C' to point D'; the depth of field range of the third image sensor 703 is DOF3', DOF3' is the distance E'F' from point E' to point F'; the depth of field range of the fourth image sensor 704 is DOF4', DOF4' is the distance G'H' from point G' to point H';

[0050] The total depth of field DOF'=DOF1'+DOF2'+DOF3'+DOF4'=A'B'+C'D'+E'F'+G'H'. By setting the depth of field ranges between different image sensors to be continuous in sequence, the maximum depth of field range under the condition of a certain number of image sensors can be obtained, which is conducive to shooting long-distance or ultra-long-distance target objects.

[0051] Embodiment 3:

[0052] like Figure 7 The figure shows a structural diagram of a specific embodiment of the stacked arrangement of the image sensors of the present invention. A first microlens 7011 is formed on the top of the first image sensor 701, and a second microlens 7021 is fixed on the top of the second image sensor 702. The vertical height of the second microlens 7021 is higher than that of the first microlens 7011, and the top of the first microlens 7011 is partially shielded to a certain extent, which can reduce the dependence of the image sensor on the area of ​​the substrate layer 6. By arranging the image sensors in a stepped height in the depth direction, it is beneficial to reduce the integrated device based on the substrate layer 6. The third image sensor 703 is fixed with a third microlens 7031 on the top, the fourth image sensor 704 is fixed with a fourth microlens 7041 on the top, the height of the fourth microlens 7041 is higher than the third microlens 7031, the welding height of the third microlens 7031 is higher than the height of the second microlens 7021, and the projection contours of the first microlens 7011, the second microlens 7021, the third microlens 7031 and the fourth microlens 7041 on the horizontal projection plane are continuous and closely connected, which is conducive to the continuous collection and transmission of the light entering the lens 1.

[0053] like Figure 8 The figure shows a top view of the stacked arrangement of the image sensors of the present invention, wherein the first microlens 7011, the second microlens 7021, the third microlens 7031 and the fourth microlens 7041 are convex lenses with equal horizontal projection areas. By fixing a plurality of image sensors with their tops spaced and staggered from each other on the substrate layer 6, the device tiling area of ​​the image sensors in the horizontal direction can be reduced, thereby optimizing the space occupied.

[0054] Preferably, a first chamfered support portion is formed at the connection between the top of the second image sensor 702 and the second microlens 7021, and a second chamfered support portion is formed at the connection between the third image sensor 703 and the third microlens 7031. The first chamfered support portion and the second chamfered support portion can respectively increase the support area of ​​the image sensor on the bottom of the microlens, thereby improving the installation stability and use reliability of the microlens.

[0055] Preferably, the projection width of the first chamfered support portion on the horizontal projection plane is the width of the area blocked by the second microlens 7021 on the top of the first microlens 7011 when vertically projected, and the projection width of the first chamfered support portion on the horizontal projection plane does not exceed one quarter of the projection width of the first microlens 7011 on the horizontal projection plane. By limiting the blocked area between microlenses, the image sensor's ability to collect optical images can be guaranteed while optimizing the image sensor's integration space.

[0056] like Figure 1 The figure shows the structure diagram of the electronic device of the present invention. An electronic device is also provided, the electronic device includes an image acquisition unit 7 as in the above scheme; the electronic device also includes a lens 1 and a body 5 detachably connected to one end of the lens 1; the body 5 is fixedly connected to the substrate layer 6 facing the inside of the lens 1; a shutter button 3 is connected to the top of the body 5, and an optical lens 4 is installed inside the lens 1.

[0057] Combination Figure 3 , and also provides an imaging method, the imaging method comprising:

[0058] The height of the image sensor in the image acquisition unit 7 of the above solution is adjusted. By adjusting the height of the image sensor, the amount of light entering the lens captured by different image sensors can be adjusted;

[0059] The highly adjusted image acquisition unit 7 is mounted on the electronic device of the above scheme, and the lens 1 is directed toward the target object, so that the light reflected by the target object forms an inverted real image in the electronic device, so as to ensure the integrity of the image captured of the target object;

[0060] The electronic device is rotated 360° along the axis center of the lens 1 and the image is collected synchronously, so that the image collection structure in the electronic device can complete the all-round collection of the image of the same target object, which is conducive to obtaining clear images of the target object at different angles;

[0061] Evaluate the sharpness of the image to obtain the clarity of the target object and facilitate the selection of images with different clarity;

[0062] Selecting multiple images to fuse to obtain a clear image of the object can obtain an image with a larger depth of field than a single image sensor.

[0063] By using a lens 1 with partially overlapping depth of field ranges or rotating 360° in sequence to capture images, the same target object can be continuously photographed at a circular angle, thereby obtaining continuous images of the same target object from a complete perspective. By using computer image fusion software to fuse multiple clear images, it is possible to facilitate imaging of image details. The fusion software can be Photoshop software.

[0064] Combination Figure 4 The method for adjusting the height of the image acquisition unit 7 is any one of wafer thinning and setting a dielectric layer 2 between the substrate layer 6 and the image acquisition unit 7, or a combination of the two methods. Preferably, the dielectric layer 2 includes a plurality of dielectric plates tightly and fixedly connected end to end, and the plurality of dielectric plates are a first dielectric plate 201, a second dielectric plate 202, a third dielectric plate 203, a fourth dielectric plate 204, a fifth dielectric plate 205 and a sixth dielectric plate 206. The first dielectric plate 201, the second dielectric plate 202, the third dielectric plate 203, the fourth dielectric plate 204, the fifth dielectric plate 205 and the sixth dielectric plate 206 are The thickness of the substrate 6 increases or decreases in sequence. The first dielectric plate 201, the second dielectric plate 202, the third dielectric plate 203, the fourth dielectric plate 204, the fifth dielectric plate 205 and the sixth dielectric plate 206 are respectively connected to image sensors of different heights, so as to further adjust the connection height of each image sensor on the substrate layer 6. By setting depressions of different depths, the depth of field range of the partition can be adjusted through the connection between each depression and the image sensor. When a flat substrate layer with uniform thickness is used, the substrate layer 6 provides a connecting substrate for the image sensor. The substrate layer 6 with uniform thickness can be connected to the image sensor through the substrate layer 6 with uniform thickness. The thickness of the image sensor itself directly determines the depth of field width, which improves the flexibility of each image sensor in determining the depth of field width; the substrate layer 6 is made of organic material or inorganic material, and the organic material can be any one of phenolic resin, glass fiber, epoxy resin, polyimide, and polytetrafluoroethylene. The substrate layer 6 made of organic material is more wear-resistant, which is beneficial to maintaining the supporting performance of the substrate layer 6; when the substrate layer 6 is made of metal aluminum or ceramic material, due to the small thermal expansion coefficient of metal aluminum or ceramic, the risk of deformation of the substrate layer 6 can be reduced, which is beneficial to improving the reliability of the sensor system. The substrate layer 6 made of aluminum or ceramic has higher compressive strength and higher temperature tolerance than that made of organic materials, which is beneficial to extending the service life of the sensor system. The image sensor models include Sony IMX989, IMX800, IMX707, IMX610, IMX591, and IMX500. The thickness of the image sensor included in each image acquisition unit 7 is thinned by wafer thinning technology, which can improve the accuracy of adjusting the focal length of the image sensor by adjusting the thickness of the substrate layer 6 and adding the dielectric layer 2, and is also beneficial to improving the adjustment accuracy of the depth of field width of the image sensor.

[0065] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. An image sensor matrix, characterized in that: include: substrate layer; At least one image acquisition unit, wherein the image acquisition units are respectively welded and fixed on the substrate layer, and each of the image acquisition units comprises at least two image sensors; The depth of field ranges of the image sensors are respectively located in mutually independent areas; Adjacent image acquisition units are closely arranged on the same horizontal projection plane; The arrangement heights of the image sensors from the lens are distributed in a step-like manner; The image acquisition unit includes a first image sensor, a second image sensor, a third image sensor and a fourth image sensor; the arrangement heights of the first image sensor, the second image sensor, the third image sensor and the fourth image sensor are increased or decreased in a clockwise direction; A first microlens is formed on the top of the first image sensor, a second microlens is fixed on the top of the second image sensor, a third microlens is fixed on the top of the third image sensor, and a fourth microlens is fixed on the top of the fourth image sensor; the second microlens is higher in vertical height than the first microlens and partially blocks the top of the first microlens to an edge degree; the fourth microlens is higher in height than the third microlens; and the projection contours of the first microlens, the second microlens, the third microlens and the fourth microlens on the horizontal projection plane are continuous and closely connected.

2. An image sensor matrix according to claim 1, characterized in that: The arrangement height difference between the first image sensor and the second image sensor is: ,and >0; the height difference between the second image sensor and the third image sensor is ,and >0; the height difference between the third image sensor and the fourth image sensor is ,and >

0.

3. An image sensor matrix according to claim 2, characterized in that: The depth of field ranges of two adjacent image sensors located on the same matrix array partially overlap.

4. An image sensor matrix according to claim 1, characterized in that: The depth of field ranges of two adjacent image sensors on the same matrix array are continuous from beginning to end.

5. An image sensor matrix according to claim 2, characterized in that: The first microlens, the second microlens, the third microlens and the fourth microlens are convex lenses with equal horizontal projection areas.

6. An image sensor matrix according to claim 5, characterized in that: A first chamfered support portion is formed at a connection between the top of the second image sensor and the second microlens, and a second chamfered support portion is formed at a connection between the third image sensor and the third microlens.

7. An image sensor matrix according to claim 6, characterized in that: The projection width of the first chamfered support portion on the horizontal projection plane is the width of the area blocked by the second microlens when the top of the first microlens is vertically projected, and the projection width of the first chamfered support portion on the horizontal projection plane does not exceed one quarter of the projection width of the first microlens on the horizontal projection plane.

8. An electronic device, characterized in that: The electronic device comprises an image sensor matrix as claimed in any one of claims 1 to 7; The electronic device also includes a lens and a body detachably connected to one end of the lens; The fuselage is fixedly connected to the substrate layer in the interior facing the lens; A shutter button is connected to the top of the body, and an optical lens is installed inside the lens.

9. An imaging method, applied to the electronic device as claimed in claim 8, characterized in that: The imaging method comprises: adjusting the height of the image sensor in the image acquisition unit; Mounting the highly adjusted image acquisition unit on the electronic device and aligning the lens directly with the target object; The electronic device is rotated 360° along the axis center of the lens and the image is collected synchronously; Evaluate the sharpness of the image to obtain the clarity of the target object; Select multiple images to fuse to get a clear image of the object.

10. The imaging method according to claim 9, characterized in that: The method for adjusting the height of the image acquisition unit is any one of wafer thinning and setting a dielectric layer between the substrate layer and the image acquisition unit, or a combination of the two methods, wherein the dielectric layer includes a plurality of dielectric plates.

Images