A heating device and a semiconductor processing apparatus

Abstract

The application discloses a heating device and a semiconductor processing equipment. The heating device is located on one side of a susceptor and has a central region and a plurality of annular regions. Each annular region comprises a plurality of heating lamps arranged uniformly along the circumference of the annular region and an annular reflector plate located on the side of the plurality of heating lamps away from the susceptor. In each annular region, the heating device further comprises a reflection assembly located on the side of the annular region close to the central region. The reflection assembly comprises a plurality of reflector plates corresponding to the plurality of heating lamps in the corresponding annular region. The reflector plates extend from the annular reflector plate towards the susceptor to define a preset region on the susceptor where the light of the corresponding heating lamp is irradiated. The reflection assembly is used to make the preset regions corresponding to the plurality of heating lamps located in different radial ranges of the susceptor. The application can avoid the light being concentrated on the same region and make the light distribution present an abrupt cliff along the radial direction, thereby realizing the gradual change of the light intensity and improving the uniformity of heating.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing equipment, in particular to a heating device and a semiconductor processing equipment. BACKGROUND

[0002] Chemical vapor deposition (CVD) silicon epitaxy is to grow a silicon film on the surface of a silicon substrate (such as a wafer) by using a CVD technology. Specifically, a reaction gas is controlled to flow through a heated wafer, and a chemical reaction of reactants occurs on the surface of the wafer to generate silicon elements, and then a layer of silicon element film is formed on the surface of the wafer.

[0003] A structure diagram of an existing CVD epitaxial equipment is shown in FIG. 1. Figure 1 As shown in FIG. 1, the top plate and the bottom plate of a process chamber 10a are made of transparent material, and an upper heating device 20a and a lower heating device 30a based on infrared light heating are arranged on the upper and lower sides of the process chamber 10a respectively. A substrate 101a is placed on a susceptor 11a in the process chamber 10a, the upper heating device 20a directly heats the surface of the substrate 101a, and the lower heating device 30a heats the susceptor 11a to indirectly heat the substrate 101a.

[0004] The temperature distribution on the surface of the substrate 101a has a significant influence on the thickness, resistivity and slip line distribution of the silicon epitaxial layer. The epitaxial layer grows at a high rate in a high-temperature area, and the thickness is relatively thick. During the heating of the substrate 101a, the heat is uniformly distributed in the conduction process because the lower heating device 30a directly heats the susceptor 11a, and the susceptor 11a indirectly heats the substrate 101a. The light distribution of the upper heating device 20a will play a dominant role in the temperature distribution on the surface of the substrate 101a because the light of the upper heating device 20a directly irradiates the substrate 101a.

[0005] The existing upper heating device 20a is generally composed of a plurality of heating lamps 21a. A reflection plate 22a is arranged around the heating lamp 21a to make the light emitted by the heating lamp 21a irradiate the surface of the substrate 101a. Due to the reflection plate 22a, the light at some radii is enhanced due to reflection, and the light at other radii is weakened due to shielding. The above phenomenon will cause a large local temperature difference and an uneven temperature field on the surface of the substrate 101a at a specific radius position because there is a significant difference in illumination on both sides of the position. SUMMARY

[0006] In view of the above technical problems, the present application provides a heating device and a semiconductor processing equipment, which can improve the problem of uneven temperature field generated by the existing upper heating device.

[0007] To solve the above technical problems, in a first aspect, the embodiments of the present application provide a heating device for heating a susceptor in a semiconductor chamber, the heating device is located on one side of the susceptor, and the heating device has a central region and a plurality of annular regions successively surrounding the central region from the central region outward;

[0008] Each of the annular regions comprises a plurality of heating lamps arranged uniformly along the circumference of the annular region and an annular reflector plate located on the side of the plurality of heating lamps away from the susceptor;

[0009] For each of the annular regions, the heating device further comprises a reflection assembly located on the side of the annular region close to the central region; the reflection assembly comprises a plurality of reflector plates corresponding one-to-one to the plurality of heating lamps in the corresponding annular region;

[0010] The reflector plates extend from the annular reflector plate toward the susceptor to define a preset region on the susceptor where the corresponding heating lamps irradiate light;

[0011] The reflection assembly is configured to make the preset regions corresponding to the plurality of heating lamps located in different radial ranges of the susceptor; and the central axis of the annular region is coaxial with the central axis of the susceptor.

[0012] Optionally, each of the reflector plates in the reflection assembly is parallel to the central axis of the susceptor; or,

[0013] Each of the reflector plates has the same angle with the central axis of the susceptor.

[0014] Optionally, the plurality of heating lamps belonging to the same annular region have the same height;

[0015] When the heating lamps are heated, the distance between the end of the reflector plate close to the susceptor and the susceptor is the first height of the reflector plate, and the first heights of the plurality of reflector plates belonging to the same reflection assembly are not completely the same.

[0016] Optionally, in the same reflection assembly, the first heights of any two adjacent reflector plates are different.

[0017] Optionally, the heating device further comprises a driver configured to adjust the lifting of each of the reflector plates.

[0018] Optionally, the plurality of heating lamps belonging to the same annular region have the same height;

[0019] When the heating lamps are heated, a distance between an end of the reflector plate close to the susceptor and the susceptor is a first height of the reflector plate, and the first heights of the plurality of reflector plates belonging to the same reflector assembly are the same.

[0020] In each of the reflector assemblies, at least part of the reflector plates are provided with light transmission holes, and distances from the light transmission holes to the susceptor are less than distances from the corresponding heating lamps to the susceptor.

[0021] Optionally, in each of the reflector assemblies, distances from the light transmission holes to the susceptor are different.

[0022] Optionally, in the adjacent two annular regions, distances from the heating lamps of the outer annular region to the susceptor are less than distances from the heating lamps of the inner annular region to the susceptor on the same radius.

[0023] Optionally, in the adjacent two annular regions, the first heights of the reflector plates of the outer annular region are less than the first heights of the reflector plates of the inner annular region on the same radius.

[0024] Optionally, in each of the annular regions, the reflector assemblies are symmetric about the center of the annular region.

[0025] Optionally, the heating device further comprises a circular reflector plate arranged in the center region, and the reflector assemblies in the innermost annular region are arranged around the circular reflector plate.

[0026] And a distance from the circular reflector plate to the susceptor is greater than the first height of any reflector plate in the reflector assemblies in the innermost annular region.

[0027] In a second aspect, the embodiments of the present application provide a semiconductor processing device, comprising a semiconductor chamber, and further comprising a heating device as described in any of the above embodiments above the semiconductor chamber and / or below the semiconductor chamber, the heating device being used to heat a susceptor in the semiconductor chamber during a process.

[0028] The heating device of the present application is as described above, the annular reflector is arranged on the side of the heating lamp away from the base, the reflection assembly is arranged on the side of the annular area close to the central area, the heating lamp is irradiated to the direction of the base under the surrounding and reflection of the annular reflector and the reflection assembly, and the base is heated. The light emitted downward by the whole heating device tends to form several light circles, and the independent control of the light intensity at different radius positions can be realized. Since the reflection assembly includes a plurality of reflection plates corresponding to the plurality of heating lamps in the corresponding annular area one by one, the reflection plates extend to the direction of the base from the annular reflector, the light irradiation of the corresponding heating lamp in each reflection plate can be limited in the preset area of the base, so that the same circle of heating lamps can irradiate to different radius positions, the light irradiation is avoided to be concentrated in the same area, and the light irradiation is distributed in the radial direction in a cliff type, so that the gradual change of the light intensity can be realized, and the uniformity of heating can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0029] The accompanying drawings, which are incorporated into and form part of the specification, illustrate embodiments consistent with the present application and, together with the specification, serve to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiment description will be briefly introduced as follows. Obviously, other drawings can also be obtained by those skilled in the art without creative labor under the premise of these drawings.

[0030] Figure 1 is a structural schematic diagram of an existing CVD epitaxial equipment;

[0031] Figure 2 is a structural schematic diagram (bottom view) of an upper heating device provided by the comparative example of the present application;

[0032] Figure 3 is a structural schematic diagram (bottom view) of a heating device provided by the embodiment of the present application;

[0033] Figure 4 is Figure 3 is an expanded sectional view of the reflection assembly corresponding to the outer circle heating lamp of

[0034] Figure 5 is Figure 3 is a side structural schematic diagram of

[0035] Figure 6 is a structural schematic diagram of a semiconductor processing equipment provided by the embodiment of the present application;

[0036] Figure 7 is a structural schematic diagram of the reflection plate provided with different depth notches according to the embodiment of the present application;

[0037] Figure 8is a top view structural schematic diagram of a reflection assembly provided by an embodiment of the present application;

[0038] Figure 9 is a structural schematic diagram of a reflection plate provided with light holes of different heights provided by an embodiment of the present application;

[0039] Figure 10 is Figure 5 is an unfolded sectional view of a reflection assembly corresponding to the outer ring heating lamp.

[0040] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. The above-described drawings have shown the specific embodiments of the present application, and the following will have more detailed description. These drawings and the written description are not intended to limit the scope of the present application by any means, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0041] The exemplary embodiments will be described in detail herein with reference to the accompanying drawings. The following description refers to the accompanying drawings in which same numbers in different drawings represent the same or similar elements unless otherwise represented. The embodiments described in the following exemplary embodiments are not representative of all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the present application as detailed in the appended claims.

[0042] It should be noted that in this document, the terms "comprising", "including", or any other variant thereof are intended to cover non-exclusive inclusion, so that processes, methods, articles or apparatuses including a series of elements not only include those elements, but also include other elements not explicitly listed, or further include elements inherent in such processes, methods, articles or apparatuses. Without more limitations, the element defined by the statement "comprising a" does not exclude the presence of another identical element in the process, method, article or apparatus including the element, in addition, components, features, elements with the same name in different embodiments of the present application may have the same meaning or different meaning, and the specific meaning thereof should be determined in combination with the explanation in the specific embodiment or further in combination with the context in the specific embodiment.

[0043] It should be further understood that the terms "comprising" or "including" indicate the presence of the stated features, steps, operations, elements, components, items, types, and / or groups, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, components, items, types, and / or groups. The terms "or," "and / or," and "comprising at least one of the following," as used in this application, can be interpreted as inclusive, or mean any one or any combination thereof. For example, "comprising at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C," and similarly, "A, B, or C" or "A, B, and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C." Exceptions to this definition only occur when the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0044] It should be understood that although the terms first, second, third, etc., may be used in this document to describe various types of information, this information should not be limited to these terms. These terms are only used to distinguish information of the same type from one another. For example, without departing from the scope of this document, first information may also be referred to as second information, and similarly, second information may also be referred to as first information. Depending on the context, the singular forms “a,” “an,” and “the” used in this document are intended to also include the plural forms, unless the context indicates otherwise.

[0045] It should be understood that the terms "top", "bottom", "upper", "lower", "vertical", "horizontal", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application.

[0046] For ease of description, the following embodiments are all illustrated using an orthogonal space formed by a horizontal plane and a vertical direction as an example. This premise should not be construed as a limitation of this application.

[0047] Please see Figure 2 , Figure 2 This is a structural schematic diagram (bottom view) of an upper heating device provided in the comparative example of this application. Please refer to it in conjunction with... Figure 1The upper heating device 20a includes a reflector 22a disposed on a base 11a parallel to the process chamber 10a, and a plurality of heating lamps 21a disposed below the reflector 22a. The reflector 22a can reflect the light emitted upward by the heating lamps 21a downward to improve heating efficiency and light utilization. All heating lamps 21a can be arranged in a circle. Every three heating lamps 21a, the reflective surface of the reflector 22a is provided with a sloped structure so that the reflected light from the heating lamp 21a corresponding to the sloped structure (distinguished by cross-sectional lines) can illuminate the central region of the substrate 101a to adjust the light distribution.

[0048] In the current heating device 20a, the only adjustable light source is the reflected light from the heating lamp 21a corresponding to the inclined structure. This solution can only adjust the temperature field to a small extent, and the range of processes it can cover is relatively small. Based on this, this application provides a heating device and semiconductor processing equipment with adjustable temperature field distribution.

[0049] Please see Figures 3-5 , Figure 3 This is a schematic diagram (bottom view) of a heating device provided in an embodiment of this application. Figure 4 yes Figure 3 A cross-sectional view of the reflective components corresponding to the outer and middle ring heating lamps. Figure 5 yes Figure 3 A side view of the structure. This heating device, used to heat the base within the semiconductor cavity, is located on one side of the base. For example, please combine with... Figure 6 The heating device can be located outside or inside the semiconductor chamber 100. It can be located directly above, directly below, or both above and below the base 130.

[0050] The heating device has a central region 301 and a plurality of annular regions 302 that surround the central region 301 outwards. Each annular region 302 includes a plurality of heating lamps 40 uniformly arranged circumferentially along the annular region 302 and an annular reflector 10 located on the side of the plurality of heating lamps 40 away from the base 130. For each annular region 302, the heating device also includes a reflective component 30 located on the side of the annular region closer to the central region 301. The reflective component 30 includes a plurality of reflectors 31 that correspond one-to-one with the plurality of heating lamps 40 in the corresponding annular region 302. The reflectors 31 extend from the annular reflectors 10 toward the base 130 to limit the light from the corresponding heating lamps 40 to illuminate a predetermined area of ​​the base 130. The reflective component 30 is used to make the predetermined areas corresponding to the plurality of heating lamps 40 located within different radial ranges of the base. The central axis of the annular region 302 is coaxial with the central axis of the base.

[0051] For example, two annular regions 302 (302A and 302B) are provided, which are respectively an outer annular region 302A and an inner annular region 302B. A plurality of heating lamps 40 are arranged in each of the two annular regions 302. For example, 32 heating lamps 40A are evenly arranged in the outer annular region 302A, and 8 heating lamps 40B are evenly arranged in the inner annular region 302B. The number of heating lamps 40 arranged in each annular region 302 can be set according to the heating requirement in specific applications. As an example, the heating lamps 40 can be infrared heating lamps.

[0052] Correspondingly, the annular reflector plate 10 can also be provided with two (10A and 10B). The annular reflector plate 10A away from the base 130 side of the heating lamp 40A can reflect the light of the heating lamp 40A to the corresponding area of the base 130. The annular reflector plate 10B away from the base 130 side of the heating lamp 40B can reflect the light of the heating lamp 40B to the corresponding area of the base 130.

[0053] Correspondingly, the reflection assembly 30 is also provided with two (30A and 30B). The inner annular region 302B close to the center region 301 side is provided with a reflection assembly 30B, and the outer annular region 302A close to the center region 301 side is provided with a reflection assembly 30A.

[0054] The reflection assembly 30 includes a plurality of reflector plates 31 corresponding to the plurality of heating lamps 40 in the corresponding annular region 302. For example, when the outer annular region 302A is provided with 32 heating lamps 40A, the reflection assembly 30A includes 32 reflector plates 31. When the inner annular region 302B is provided with 8 heating lamps 40B, the reflection assembly 30B includes 8 reflector plates 31. The reflector plate 31 extends from the annular reflector plate 10 to the base 130 to limit the irradiation range of the corresponding heating lamp 40 in the preset area of the base 130. That is, the reflector plate 31 can limit the irradiation range of the heating lamp 40 to the center region of the base 130 from the inside, so that the light of the plurality of heating lamps 40 is irradiated in different radial ranges of the base 130.

[0055] The working principle of the heating device of the embodiment is as follows: the annular reflector plate 10 is arranged on the side of the heating lamp 40 away from the base 130, the reflection assembly 30 is arranged on the side of the annular area 302 close to the central area 301, the heating lamp 40 irradiates to the direction of the base 130 under the surrounding and reflection of the annular reflector plate 10 and the reflection assembly 30, and the base 130 is heated. The light emitted downward by the whole heating device tends to form a plurality of light circles, and the independent control of the light intensity at different radius positions can be realized. Since the reflection assembly 30 includes a plurality of reflector plates 31 corresponding to the plurality of heating lamps 40 in the corresponding annular area 302, the reflector plate 31 extends to the direction of the base 130 from the annular reflector plate 10, and the light irradiation of the corresponding heating lamp 40 in the base 130 can be limited by each reflector plate 31, so that the same ring of heating lamps 40 can irradiate to different radius positions, avoiding the light irradiation concentrated in the same area and making the light irradiation present a cliff type distribution along the radial direction, so that the gradual change of the light intensity can be realized, and the uniformity of heating can be improved.

[0056] It can be understood that for the outermost annular area 302, another reflection assembly 30 can be arranged around the outer diameter thereof to limit the light of the heating lamp 40 in the heating device.

[0057] In the embodiment, the angle of the reflection assembly 30 in the vertical direction is not limited. As some examples, each reflector plate 31 in the reflection assembly 30 can be parallel to the central axis of the base 130, or the included angle with the central axis of the base 130 can be the same, such as each reflector plate 31 being inclined to the central axis of the base 130 by a preset angle (such as 10°) from top to bottom, or being inclined away from the central axis of the base 130 by a preset angle. Combined with the length setting of the reflector plate 31 in the vertical direction, the installation height setting of the heating lamp 40, etc., the same ring of heating lamps 40 can irradiate to different radius positions of the base 130. The application will be further described in detail in specific embodiments.

[0058] In one embodiment, please continue to refer to Figure 4 and Figure 5 The heights of the plurality of heating lamps 40 in the same annular area 302 are the same. Taking the distance between the end of the reflector plate 31 close to the base 130 and the base 130 as the first height H of the reflector plate 31 when the heating lamp 40 heats, the first heights H of the plurality of reflector plates 31 belonging to the same reflection assembly 30 are not completely the same. For example, Figure 4The first height of the middle reflective plate 31B and the reflective plate 31A is different by H0, so that a gap 311 is formed on the reflective assembly 30, and the corresponding heating lamp 40 of the reflective plate 31A can irradiate to a position of different radius of the susceptor 130 through the gap 311, so as to realize the gradient of the illumination intensity on the radius. By setting the first height H of each reflective plate 31, a plurality of gaps 311 can be formed, so that the reflective assembly 30 forms a sawtooth structure as shown in FIG. 3B. For example, in the same annular area 302, every other heating lamp 40A is provided with a gap 311, and the projection of the gap 311 and the corresponding heating lamp 40A on the annular area 302 is located on the same radius. With different depth sizes H0 of the gap 311, the irradiation radius is also different. By setting the gap 311 on the second annular reflective plate 30, the irradiation radius range of the heating lamp 40A can be expanded, the gradient of the illumination intensity is realized, and the uniformity of heating is improved. Figure 4

[0059] It should be noted that the reflective assembly 30 can be an integrated structure, or a plurality of reflective plates 31 can be sequentially spliced, as shown in FIG. 3C. By setting the lengths of the adjacent two reflective plates 31 in the vertical direction to be different, the gap 311 can be formed. The specific forming mode of the reflective assembly 30 is not particularly limited in the embodiments of the present application. Figure 8

[0060] It should be emphasized that by setting the shape and height of the reflective plate 31, the depth H0 of the gap 311 can be different, and the position of the gap 311 on the reflective assembly 30 can also be random and not periodic. Moreover, the shape of the gap 311 is not limited to the rectangular shape shown in the figure, for example, it can also be a triangle, a circular arc, or a combination of different patterns, etc.

[0061] Preferably, in the same reflective assembly 30, the first heights H of any two adjacent reflective plates 31 are different, a regular sawtooth structure can be formed, and the uniformity of heating is improved. In addition, in each annular area 302, the reflective assembly 30 is preferably symmetrical about the center of the annular area 302, so that the heating lamp 40 located at the symmetrical position can heat the same radius range of the susceptor 130, thereby the illumination range can be adjusted symmetrically, so as to improve the uniformity of the temperature field.

[0062] As an example, in the same radius of the adjacent two annular areas 302, the first height of the reflective plate 31 of the outer annular area 302 is smaller than the first height of the reflective plate 31 of the inner annular area 302. This can prevent the heating lamp 40 from diverging outward, and reduce the heating efficiency.

[0063] In one embodiment, please continue to refer to Figure 5 ​​In two adjacent annular regions 302, at the same radius, the distance L between the heating lamp 40 of the outer annular region 302 and the base 130 is smaller than the distance L between the heating lamp 40 of the inner annular region 302 and the base 130. Since the area closer to the center of the base 130 will be irradiated by more heating lamps 40, the uneven heating can be balanced by setting the inner heating lamp 40 further away from the base 130, thereby improving the heating uniformity of the base 130.

[0064] In one embodiment, please continue reading Figure 3 and Figure 5 The heating device may further include a circular reflector 20 disposed in the central region 301, with reflective components 30 in the innermost annular region 302 surrounding the circular reflector 20, and the distance S between the circular reflector 20 and the base 130 being greater than the first height H of any reflector 31 in the reflective components 30 in the innermost annular region 302. By positioning the circular reflector 20 at a higher position, the obstruction of the circular reflector 20 to the heating lamp in the inner annular region 302 can be reduced.

[0065] For ease of description, please refer to Figure 6 and Figure 7 , Figure 6 This is a schematic diagram of the structure of a semiconductor processing device provided in an embodiment of this application. Figure 7 This is a schematic diagram of a structure with notches of different depths on a reflector provided in an embodiment of this application. The heating device of this application is applied in the semiconductor processing equipment. A target plane 102 is defined as the surface directly below the circular area of ​​the annular reflector 10 at a predetermined distance L0. In application, the target plane 102 can be the top surface of the component to be heated (e.g., a substrate), that is, after the component to be heated is mounted on the base 130, the distance between the top surface of the component to be heated and the bottom surface of the annular reflector 10 is L0. The point on the target plane 102 directly opposite the center of the annular area 302 is defined as the center point O. The intersection of the light emitted by the heating lamp 40 corresponding to the notch 311 through the notch 311 and the target plane 102 is defined as the target point A. As some examples, for instance, the depth of at least one notch 311 satisfies the following condition: the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on the same side of the center point O. Figure 7 As shown in the middle view a. As mentioned above, the notches 311 are preferably arranged symmetrically in pairs with respect to the center point O. The figure shows a schematic diagram of two symmetrically positioned heating lamps 40 emitting light to the target plane 102 through their respective notches 311. Through the notches 311, the irradiation radius of the corresponding heating lamps 40 can be expanded towards the center point O, avoiding all light rays from irradiating the same radius and achieving a gradual change in light intensity.

[0066] For example, the depth of at least one notch 311 can be such that the projection B of the heating lamp 40 corresponding to the notch 311 on the target plane 102 and the target point A are located on both sides of the center point O, such as... Figure 7 As shown in the middle view c. Similarly, the figure illustrates a schematic diagram of two symmetrically positioned heating lamps 40 emitting light towards the target plane 102 through their respective corresponding notches 311. Since the notches 311 are relatively deep, the heating lamps 40 can illuminate the other side of the center point O through the corresponding notches 311, which can give the heating lamps 40 a larger illumination radius and achieve a gradual change in light intensity.

[0067] For example, the depth of at least one gap 311 can be made to satisfy the following condition: the target point A corresponding to the gap 311 coincides with the center point O, such as... Figure 7 As shown in the middle view (b), the figure also illustrates two symmetrically positioned heating lamps 40 emitting light into the target plane 102 through their respective notches 311. The heating lamps 40 illuminate the center point O through their respective notches 311, meaning that the target point A coincides with the center point O.

[0068] In practical applications, the depth of notch 311 can be... Figure 7 The three settings corresponding to Figures a, b, and c can be selected; one, two, or a combination of all three can be chosen. The temperature field can be adjusted by controlling the on / off state and power of the heating lamps 40 corresponding to different notches.

[0069] In one embodiment, see Figure 6 The heating device includes multiple heating lamps 40 within the same annular region 302 at the same height, and multiple reflectors 31 within the same reflective assembly 30 at different initial heights H. The heating device may also include a driver 50 for adjusting the height of each reflector 31. For example, the driver 50 may be a motor. The driver 50 can be configured in a one-to-one correspondence with each reflector 31, or two heating lamps symmetrically positioned can be controlled by the same driver 50 for height adjustment. When significant adjustments to the temperature field are required, the driver 50 can be used to adjust the height of each reflector 31 to achieve a wider process coverage.

[0070] For further details, please refer to Figure 6 The heating device may also include a controller 60, which can individually control the switching on and off of each heating lamp 40 and the heating power, thereby allowing for adjustment of the temperature field over a wider range.

[0071] In one embodiment, a light-transmitting hole 312 can also be provided on the reflector 31 to change the radial illumination range of the heating lamp. See also... Figure 9 and Figure 10 ,Figure 9 is a structural diagram of a light transmission hole with different heights provided on a reflecting plate according to an embodiment of the present application, Figure 10 is Figure 5 is a development section view of the reflecting assembly corresponding to the annular area of the outer ring. In this scheme, the heights of the plurality of heating lamps 40 belonging to the same annular area 302 are the same, and the first heights H of the plurality of reflecting plates 31 belonging to the same reflecting assembly 30 are the same, which can simplify the manufacturing process of the reflecting assembly 30; in each reflecting assembly 30, at least part of the reflecting plates 31 are provided with light transmission holes 312, and the distance between the light transmission holes 312 and the base 130 is less than the distance between the corresponding heating lamp 40 and the base 130, which can ensure that the light of the heating lamp 40 can pass through the corresponding light transmission hole 312 to irradiate downward to heat the base 130.

[0072] Figure 9 In the scheme from a to c, compared with a, the light transmission holes 312A and 312B are provided, the heating lamp 40 can irradiate the areas with different radii on the target plane 102, and as the height of the light transmission hole 312 increases, the irradiation radius of the heating lamp 40 also changes accordingly, the provision of the light transmission hole 312 can expand the irradiation range of the heating lamp 40 on the target plane 102, avoid the local concentrated distribution of the heating lamp 40, and irradiate on the same radius, so as to reduce the local temperature difference and realize the gradual change of the illumination intensity. Figure 9 In the scheme from a to c, compared with a, the light transmission holes 312A and 312B are provided, the heating lamp 40 can irradiate the areas with different radii on the target plane 102, and as the height of the light transmission hole 312 increases, the irradiation radius of the heating lamp 40 also changes accordingly, the provision of the light transmission hole 312 can expand the irradiation range of the heating lamp 40 on the target plane 102, avoid the local concentrated distribution of the heating lamp 40, and irradiate on the same radius, so as to reduce the local temperature difference and realize the gradual change of the illumination intensity.

[0073] Preferably, in each reflecting assembly 30, the distance between the adjacent two light transmission holes 312 and the base 130 is different. Thus, the adjacent two heating lamps 40 can irradiate different radius ranges, realize the gradual change of the illumination intensity, and improve the uniformity of heating.

[0074] The present application also provides a semiconductor processing device, please refer to Figure 6The semiconductor processing apparatus includes a semiconductor chamber 100, and heating devices arranged outside the semiconductor chamber 100, such as an upper heating device 200 arranged above the semiconductor chamber 100, and / or a lower heating device 300 arranged below the semiconductor chamber 100. The upper heating device 200 and the lower heating device 300 can be the heating device as described in the above embodiments, and are used to heat the susceptor 130 in the semiconductor chamber 100 during a process. As an example, the top plate 110 and the bottom plate 120 of the semiconductor chamber 100 can be made of a transparent material, such as quartz. The semiconductor chamber 100 is provided with a susceptor 130 for carrying a substrate. During a process, the lower heating device 300 heats the susceptor 130 through the bottom plate 120, and the upper heating device 200 heats the substrate through the top plate 110. The semiconductor processing apparatus can be a CVD silicon epitaxial apparatus.

[0075] For other working principles and processes of the semiconductor processing apparatus, refer to the above description of the heating device in the embodiments of the present application, which will not be repeated here.

[0076] The above describes in detail the heating device and the semiconductor processing apparatus provided by the present application. The principles and implementation manners of the present application are described by using specific examples. It should be noted that the description of each embodiment in the present application has its own focus, and the parts not described or recorded in one embodiment can be referred to the relevant description of other embodiments.

[0077] The above is only the preferred embodiments of the present application, and does not limit the patent scope of the present application. Each technical feature of the technical solutions of the present application can be combined arbitrarily. In order to make the description simple, each technical feature in the above embodiments is not described in all possible combinations. Any equivalent structure or equivalent process conversion, or direct or indirect application in other related technical fields, as long as the combination of technical features does not exist contradictory, are also included in the patent protection scope of the present application.

Claims

1. A heating apparatus for heating a susceptor within a semiconductor chamber, the apparatus comprising: a heating element; a susceptor support; and a susceptor support heater, wherein the susceptor support heater is configured to heat the susceptor support. The heating device is located on one side of the base, and has a central region and a plurality of annular regions successively surrounding the central region outward from the central region; Each of the annular regions comprises a plurality of heating lamps arranged uniformly in the circumferential direction of the annular region and an annular reflector plate located on the side of the plurality of heating lamps away from the base; For each of the annular regions, the heating device further comprises a reflection assembly located on the side of the annular region close to the central region; the reflection assembly comprises a plurality of reflector plates corresponding one-to-one to the plurality of heating lamps in the corresponding annular region; The reflector plate extends from the annular reflector plate toward the base to define a preset region in which the corresponding heating lamp irradiates light; The reflection assembly is used to make the corresponding preset regions of the plurality of heating lamps located in different radial ranges of the base; wherein the central axis of the annular region is coaxial with the central axis of the base.

2. The heating device of claim 1, wherein Each of the reflector plates in the reflection assembly is parallel to the central axis of the base; or, Each of the reflector plates has the same angle with the central axis of the base.

3. The heating device of claim 2, wherein, The heights of the plurality of heating lamps in the same annular region are the same; When the heating lamps are heated, the distance between the end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the plurality of reflector plates belonging to the same reflection assembly are not completely the same.

4. The heating device of claim 3, wherein In the same reflection assembly, the first heights of any two adjacent reflector plates are different.

5. The heating device of claim 3, wherein Further comprising a driver for adjusting the lifting of each reflector plate.

6. The heating device of claim 2, wherein The heights of the plurality of heating lamps in the same annular region are the same; When the heating lamps are heated, the distance between the end of the reflector plate close to the base and the base is the first height of the reflector plate, and the first heights of the plurality of reflector plates belonging to the same reflection assembly are the same; In each of the reflection assemblies, at least part of the reflector plates are provided with light transmission holes, and the distance between the light transmission holes and the base is less than the distance between the corresponding heating lamps and the base.

7. The heating device of claim 6, wherein In each of the reflection assemblies, the distances between the adjacent two light transmission holes and the base are different.

8. The heating device according to any one of claims 1-7, characterized in that In the adjacent two annular regions, on the same radius, the distance between the heating lamps in the outer annular region and the base is less than the distance between the heating lamps in the inner annular region and the base.

9. The heating device according to any one of claims 1-7, characterized in that In the adjacent two annular regions, on the same radius, the first height of the reflector plate in the outer annular region is less than the first height of the reflector plate in the inner annular region.

10. The heating device according to any one of claims 1-7, characterized in that In each of the annular regions, the reflection assembly is symmetrical about the center of the annular region.

11. The heating device according to any one of claims 3-7, characterized in that Further comprising a circular reflector plate provided in the central region, and the reflection assembly of the innermost annular region is arranged around the circular reflector plate; And the distance between the circular reflector plate and the base is greater than the first height of any of the reflector plates in the reflection assembly of the innermost annular region.

12. A semiconductor processing apparatus comprising a semiconductor chamber, characterized by, Also included is a heating device as claimed in any of claims 1-11 positioned above and / or below the semiconductor chamber for heating a susceptor within the semiconductor chamber during a process.

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