Pattern measuring method and pattern adjusting method

Abstract

The invention provides a pattern measuring method and an adjusting method, and the method comprises the steps: forming a plurality of strip-shaped patterns which are arranged at intervals on a sub-region through a multi-time exposure technology, and then dividing the interval patterns between the adjacent strip-shaped patterns in the sub-region into odd-numbered columns and even-numbered columns by taking the strip-shaped patterns as intervals, or dividing the interval patterns between the adjacent strip-shaped patterns in the sub-region into an odd-numbered column and an even-numbered column; the strip-shaped patterns are divided into odd-numbered columns and even-numbered columns; calculating the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns, comparing the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns with provided standard values, obtaining the size deviation of the odd-numbered columns and the even-numbered columns, and achieving the measurement of the pattern. In addition, the technology for forming the strip-shaped pattern can be adjusted, and pattern adjustment is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a pattern measuring method and an adjustment method. Background Art

[0002] In the semiconductor manufacturing process, the self-aligned double patterning process (SADP) and the self-aligned quadruple patterning process (SAQP) are common manufacturing processes that can obtain patterns with small pitches. In the self-aligned double patterning process and the self-aligned quadruple patterning process, the spacing of the formed stripe patterns may be required to be the same to meet the current process requirements. However, in the manufacturing process, there may be process deviations that cause the spacing of any adjacent stripe patterns to be different, that is, there is pitch walking (pitch drift), which will affect the preparation of semiconductor devices. Therefore, it is necessary to measure pitch walking to keep it within a reasonable range to meet the process requirements. Summary of the invention

[0003] The purpose of the present invention is to provide a pattern measurement method and an adjustment method to achieve pattern measurement and adjustment.

[0004] In order to achieve the above object, the present invention provides a method for measuring a pattern, comprising:

[0005] providing a substrate, the substrate comprising a plurality of sub-regions;

[0006] Forming a plurality of stripe patterns arranged at intervals on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals;

[0007] Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns;

[0008] Provide a standard value;

[0009] The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

[0010] Optionally, the multiple exposure process includes:

[0011] Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

[0012] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0013] The present invention provides a method for measuring a pattern, comprising:

[0014] providing a substrate, the substrate comprising a plurality of sub-regions;

[0015] Forming a plurality of stripe patterns arranged at intervals on the sub-areas by a multiple exposure process, wherein the stripe patterns are used as odd-numbered columns, and the spacing patterns between adjacent stripe patterns are used as even-numbered columns;

[0016] Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns;

[0017] Provide a standard value;

[0018] The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

[0019] Optionally, the multiple exposure process includes:

[0020] Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

[0021] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0022] The present invention provides a method for adjusting a pattern, comprising:

[0023] providing a substrate, the substrate comprising a plurality of sub-regions;

[0024] forming core shaft patterns arranged at intervals from each other and side wall patterns located on both sides of the core shaft patterns on the sub-regions;

[0025] removing the mandrel pattern;

[0026] forming a plurality of stripe patterns arranged at intervals on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, and aligning the odd columns with the sidewall pattern in the vertical direction;

[0027] removing the side wall pattern;

[0028] Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns;

[0029] Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each of the sub-regions and the standard deviation of the size of the odd-numbered columns of each of the sub-regions;

[0030] A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

[0031] Optionally, the maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

[0032] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0033] Optionally, the side wall graphics located on both sides of the core shaft graphic are used as the first side wall graphics. After the first side wall graphics are formed, the total size of the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is measured and compared with a first preset value range. When the total size of the first side wall graphics on the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is not within the first preset value range, the first side wall graphics is adjusted. After removing the core shaft graphic, the size of the first side wall graphics is measured and compared with a second preset value range. When the size of the first side wall graphics is not within the second preset value range, the first side wall graphics is adjusted.

[0034] Optionally, forming a plurality of spaced-apart strip patterns on the sub-area includes: performing a pattern transfer according to the first side wall pattern to form a second side wall pattern located on both side walls of the transfer pattern, and removing the transfer pattern; after forming the second side wall pattern, measuring the total size of the transfer pattern and the second side wall pattern on both side walls of the transfer pattern and comparing it with a third preset value range, and when the total size of the transfer pattern and the second side wall pattern on both side walls of the transfer pattern is not within the third preset value range, adjusting the second side wall pattern; after removing the transfer pattern, measuring the size of the second side wall pattern and comparing it with a fourth preset value range, and when the size of the second side wall pattern is not within the fourth preset value range, adjusting the second side wall pattern.

[0035] The present invention provides a method for adjusting a pattern, comprising:

[0036] providing a substrate, the substrate comprising a plurality of sub-regions;

[0037] forming core shaft patterns arranged at intervals from each other and side wall patterns located on both sides of the core shaft patterns on the sub-regions;

[0038] removing the mandrel pattern;

[0039] forming a plurality of stripe patterns arranged at intervals on the sub-region, wherein the stripe patterns are used as odd-numbered columns, and spacing patterns between adjacent stripe patterns are used as even-numbered columns, wherein the odd-numbered columns are aligned with the sidewall patterns in a vertical direction;

[0040] removing the side wall pattern;

[0041] Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns;

[0042] Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each of the sub-regions and the standard deviation of the size of the odd-numbered columns of each of the sub-regions;

[0043] A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

[0044] Optionally, the maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

[0045] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0046] Optionally, after forming the sidewall pattern, the total size of the mandrel pattern and the sidewall patterns on both sides of the mandrel pattern is measured and compared with a first preset value range; when the total size of the mandrel pattern and the sidewall patterns on both sides of the mandrel pattern is not within the first preset value range, the sidewall pattern is adjusted; after removing the mandrel pattern, the size of the sidewall pattern is measured and compared with a second preset value range; when the size of the sidewall pattern is not within the second preset value range, the sidewall pattern is adjusted.

[0047] In a pattern measurement method provided by the present invention, a plurality of spaced-apart strip patterns are formed on a sub-region through multiple exposure processes, and then the spacing patterns between adjacent strip patterns in the sub-region are divided into odd columns and even columns with the strip patterns as intervals, or the strip patterns are taken as odd columns, and the spacing patterns between adjacent strip patterns are taken as even columns; then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are compared with the provided standard values, so that the size deviations of the odd columns and the even columns can be known, thereby realizing the measurement of the pattern.

[0048] In a pattern adjustment method provided by the present invention, core axis patterns arranged at intervals from each other and side wall patterns located on both sides of the core axis patterns are formed on the sub-area; further, a plurality of stripe patterns arranged at intervals are formed on the sub-area, and the spacing patterns between adjacent stripe patterns in the sub-area are divided into odd columns and even columns with the stripe patterns as intervals, or the stripe patterns are used as odd columns, and the spacing patterns between adjacent stripe patterns are used as even columns, and the odd columns are aligned with the side wall patterns in the vertical direction; the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and the value of any standard deviation of the size of the odd columns is used as the standard value, and a correlation diagram is established according to the size of the core axis pattern of each sub-area and the standard deviation of the size of the odd columns of each sub-area; the size adjustment value of the core axis pattern is determined according to the standard value and the correlation diagram, and the process for forming the stripe pattern is adjusted based on the size adjustment value, and the process for forming the stripe pattern is adjusted, thereby achieving pattern adjustment. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 The present invention provides a flow chart of a method for measuring a pattern.

[0050] Figure 2 to Figure 8 The cross-sectional schematic diagram is a schematic diagram of the steps of forming a stripe pattern in a pattern measurement method provided in the first embodiment of the present invention.

[0051] Fig. 9 A schematic cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in Embodiment 1 of the present invention.

[0052] Fig.10 The present invention is a flowchart of a method for adjusting a pattern provided in the first embodiment of the present invention.

[0053] Fig.11 A correlation diagram of a pattern adjustment method provided in Embodiment 1 of the present invention.

[0054] Figure 12 to Figure 15 A cross-sectional schematic diagram of the steps of forming a stripe pattern in a pattern measurement method provided in Embodiment 2 of the present invention.

[0055] Fig.16 A schematic cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in Embodiment 2 of the present invention.

[0056] Wherein, the accompanying drawings are marked as follows:

[0057] 10-substrate; 20-silicon oxide layer; 30-amorphous silicon layer; 40-silicon nitride layer; 40a-strip pattern; 51-first APF layer; 52-second APF layer; 60-silicon carbide nitride layer; 70-silicon oxynitride layer; 80-anti-reflective coating; 90-initial core axis pattern; 100-sidewall pattern; 110-first sidewall pattern; 120-second sidewall pattern; 130-transfer pattern; 210-odd columns; 220-even columns. DETAILED DESCRIPTION

[0058] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.

[0059] Embodiment 1

[0060] Figure 1 This is a flow chart of a pattern measurement method provided in this embodiment. Please refer to Figure 1 , this embodiment provides a pattern measurement method, including:

[0061] Step S1: providing a substrate, wherein the substrate includes a plurality of sub-regions;

[0062] Step S2: forming a plurality of stripe patterns arranged at intervals on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals;

[0063] Step S3: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0064] Step S4: providing a standard value;

[0065] Step S5: Compare the standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns with the standard value.

[0066] Figure 2 to Figure 8 The following is a cross-sectional schematic diagram of each step of forming a stripe pattern in a pattern measurement method provided in this embodiment. Figure 2 to Figure 8 A pattern measurement method provided in this embodiment is described in detail.

[0067] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process size in each sub-region can be the same or different, the size of the core shaft pattern subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0068] Execute step S2: form a plurality of stripe patterns arranged at intervals on the sub-regions through a multiple exposure process. Specifically, the steps of the multiple exposure process include:

[0069] Please refer to Figure 2 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 The horizontal dimension in the figure can be understood as Figure 2 A sub-region is shown, and the size of the mandrel pattern of each sub-region is the same or different. Among them, the silicon oxide layer 20, the amorphous silicon layer 30, the silicon nitride layer 40, the first APF (Advanced Patterning Film) layer 51, the silicon carbide nitride layer 60, the second APF layer 52, and the silicon oxynitride layer 70 are all mask layers, and the mask layers can be modified according to different process requirements, which is not limited here; the anti-reflective coating layer 80 can be used according to the application scenario, which is not limited here.

[0070] Please refer to Figure 3 , the pattern is transferred according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, the sidewall patterns on both sides of the mandrel pattern are formed, and the sidewall patterns are the first sidewall patterns 110. The first sidewall patterns 110 are also located on the top of the mandrel pattern and part of the surface of the silicon carbide nitride layer 60. The first sidewall patterns 110 are formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small degree of variation. Please refer to Figure 4 , remove the second APF layer 52 and the silicon oxynitride layer 70 (mandrel pattern) and part of the first sidewall pattern 110, and retain the first sidewall pattern 110 located on both sides of the mandrel pattern.

[0071] Please refer to Figure 5 , a pattern transfer is performed according to the first sidewall pattern 110, so that the pattern is transferred to the first APF layer 51 and the silicon carbide nitride layer 60 to form a transfer pattern 130, and the first sidewall pattern 110 is removed during the pattern transfer process. Please refer to Figure 6, forming the second sidewall pattern 120 located on both side walls of the transfer pattern 130, the second sidewall pattern 120 is also located on the top of the transfer pattern 130 and part of the surface of the silicon nitride layer 40, and the second sidewall pattern 120 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small variation. Please refer to Figure 7 , remove the transfer pattern 130 and part of the second sidewall pattern 120 , and retain the second sidewall pattern 120 located on both sides of the transfer pattern 130 .

[0072] Please refer to Figure 8 , a pattern transfer is performed according to the second sidewall pattern 120, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a. In this embodiment, the spacing pattern between adjacent stripe patterns 40a in the sub-region is divided into odd columns 210 and even columns 220 with the stripe pattern 40a as the interval, and the odd columns 210 and the even columns 220 are arranged at intervals; the second sidewall pattern 120 is removed during the pattern transfer process.

[0073] Fig. 9 This is a cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in this embodiment. Please refer to Fig. 9 , Fig. 9 FIG. 4 shows a partial cross-sectional comparison diagram of forming a stripe pattern 40a. Several cross-sectional diagrams are arranged from top to bottom in the vertical direction according to the preparation order, and dotted lines are used to align each pattern in each cross section to reflect the difference before and after the pattern transfer. Fig. 9 It can be seen that the odd-numbered columns 210 are in the vertical direction ( Fig. 9 The first sidewall pattern 110 is aligned with the sidewall pattern (first sidewall pattern 110) in the longitudinal direction of the first sidewall pattern 110. The first sidewall pattern 110 is not only formed by atomic layer chemical vapor deposition but also in the initial stage of pattern transfer. Atomic layer chemical vapor deposition can accurately control the thickness of the first sidewall pattern 110, and the deviation of the pattern transfer in the initial stage is small. By controlling the thickness of the first sidewall pattern 110, the size of the odd-numbered columns 210 can be accurately controlled, so the standard deviation of the size of the odd-numbered columns 210 will be small. However, after multiple pattern transfers of the even-numbered columns 220, the size deviation of the even-numbered columns 220 will be large, resulting in a large standard deviation of the size of the even-numbered columns 220. The standard deviation of the size of the even-numbered columns 220 will be greater than the standard deviation of the size of the odd-numbered columns 210. The smaller the standard deviation, the more it meets the process requirements.

[0074] Please continue to refer to Figure 8, execute step S3: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size of different positions on the odd column 210 and then calculating the average value, and the size d2 of each even column 220 can be obtained by measuring the size of different positions on the even column 220 and then calculating the average value; then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained according to the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained according to the size d2 of the several even columns 220.

[0075] Execute step S4: provide a standard value. In this embodiment, the standard value is used to measure whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements. Since the standard deviation of the size of the odd columns is smaller and better meets the process requirements, the value of the maximum standard deviation of the odd columns is preferably used as the standard value. The standard value can also be set.

[0076] Execute step S5: compare the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns with the standard value, so as to know whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements, and evaluate the size deviation of the odd columns and the size deviation of the even columns, so as to realize the measurement of the pattern.

[0077] Fig.10 This is a flow chart of a pattern adjustment method provided in this embodiment. Please refer to Fig.10 This embodiment also provides a method for adjusting a pattern, including:

[0078] Step S1: providing a substrate, wherein the substrate includes a plurality of sub-regions;

[0079] Step S2: forming mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns on the sub-regions;

[0080] Step S3: removing the mandrel pattern;

[0081] Step S4: forming a plurality of stripe patterns arranged at intervals on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, and aligning the odd columns with the sidewall patterns in the vertical direction;

[0082] Step S5: removing the side wall pattern;

[0083] Step S6: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0084] Step S7: taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region;

[0085] Step S8: determining a size adjustment value of the mandrel pattern according to the standard value and the correlation diagram, and adjusting a process for forming the stripe pattern based on the size adjustment value.

[0086] Next, combine Figure 2 to Figure 8 A pattern adjustment method provided in this embodiment is described in detail.

[0087] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process size in each sub-region can be the same or different, that is, the size of the core shaft pattern subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0088] Step S2 is performed: forming mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns on the sub-areas. The steps of forming the mandrel patterns and the sidewall patterns include:

[0089] Please continue to refer to Figure 2 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 The horizontal dimension in the figure can be understood as Figure 2 A sub-region is shown, and the size of the mandrel pattern of each sub-region is the same or different. Among them, the silicon oxide layer 20, the amorphous silicon layer 30, the silicon nitride layer 40, the first APF (Advanced Patterning Film) layer 51, the silicon carbide nitride layer 60, the second APF layer 52, and the silicon oxynitride layer 70 are all mask layers, and the mask layers can be modified according to different process requirements, which is not limited here; the anti-reflective coating layer 80 can be used according to the application scenario, which is not limited here.

[0090] Please continue to refer to Figure 3, a pattern transfer is performed according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, a sidewall pattern located on both sides of the mandrel pattern is formed, and this sidewall pattern is a first sidewall pattern 110. The first sidewall pattern 110 is also located on the top of the mandrel pattern and a part of the surface of the silicon carbide nitride layer 60. The first sidewall pattern 110 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a smaller degree of variation.

[0091] Execute step S3: Please continue to refer to Figure 4 , remove the mandrel pattern (the second APF layer 52 and the silicon oxynitride layer 70) and part of the first sidewall pattern 110, and retain the first sidewall pattern 110 located on both sides of the mandrel pattern.

[0092] Execute step S4: form a plurality of stripe patterns arranged at intervals on the sub-areas. The steps of forming the stripe patterns include: Figure 5 , a pattern transfer is performed according to the first sidewall pattern 110, so that the pattern is transferred to the first APF layer 51 and the silicon carbide nitride layer 60 to form a transfer pattern 130. Please continue to refer to Figure 6 , forming the second sidewall pattern 120 located on both side walls of the transfer pattern 130, the second sidewall pattern 120 is also located on the top of the transfer pattern 130 and part of the surface of the silicon nitride layer 40, and the second sidewall pattern 120 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small variation. Please continue to refer to Figure 7 , remove the transfer pattern 130 and part of the second sidewall pattern 120 , and retain the second sidewall pattern 120 located on both sides of the transfer pattern 130 .

[0093] Please continue to refer to Figure 8 , the pattern is transferred according to the second sidewall pattern 120, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a. In this embodiment, the spacing pattern between adjacent stripe patterns 40a in the sub-region is divided into odd columns 210 and even columns 220 with the stripe pattern 40a as the interval, and the odd columns 210 and the even columns 220 are arranged alternately. Please continue to refer to Fig. 9 , the odd-numbered columns 210 are aligned with the sidewall patterns (the first sidewall patterns 110) in the vertical direction.

[0094] Executing step S5: the first sidewall pattern and the second sidewall pattern are removed during the pattern transfer process.

[0095] Please continue to refer to Figure 8, execute step S6: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size of different positions on the odd column 210 and then calculating the average value, and the size d2 of each even column 220 can be obtained by measuring the size of different positions on the even column 220 and then calculating the average value; then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained according to the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained according to the size d2 of the several even columns 220.

[0096] Execute step S7: take the value of any standard deviation of the size of the odd-numbered columns as the standard value, and the standard value is used to measure whether the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns meet the process requirements. Since the standard deviation of the size of the odd-numbered columns is smaller and more in line with the process requirements, the value of the maximum standard deviation of the size of the odd-numbered columns is preferably used as the standard value. Then, a correlation diagram is established based on the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region. The size of the mandrel pattern of each sub-region is different, which generally leads to differences in the standard deviation of the size of the odd-numbered columns of each sub-region, so it is necessary to establish a correlation diagram between the two. In this embodiment, since the odd-numbered columns are aligned with the sidewall pattern (the first sidewall pattern 110) in the vertical direction, the value of any standard deviation of the size of the odd-numbered columns is selected as the standard value; however, in actual situations, the value of any standard deviation of the size of the odd-numbered columns or even-numbered columns aligned with the sidewall pattern (the first sidewall pattern 110) is selected as the standard value.

[0097] Fig.11 This is a correlation diagram of a pattern adjustment method provided in this embodiment. Please refer to Fig.11 The horizontal axis is the size of the mandrel figure of each sub-region (45-53, in nm), and the vertical axis is the standard deviation of the size of the odd-numbered columns (0.2-1.4). Fig.11 The dimensions of the mandrel graph are shown in the figure as 46, 48, 50 and 52, and the standard deviations of the dimensions of the corresponding odd-numbered columns are 0.9, 0.31, 0.95 and 1.45, respectively. Fig.11 The value of the standard deviation of the size of the mandrel pattern and its corresponding size can be obtained by the measurement method of the pattern described above.

[0098] Execute step S8: determine the size adjustment value of the mandrel graphic according to the standard value (the value of the maximum standard deviation of the sizes of the odd-numbered columns can be taken) and the correlation diagram. Specifically, obtain the size of the corresponding mandrel graphic in the correlation diagram according to the standard value as the standard size, and obtain the size of the corresponding mandrel graphic in the correlation diagram according to the standard deviation of the sizes of any even-numbered columns as the reference size, obtain the minimum difference between the standard size and the reference size as the size adjustment value of the mandrel graphic, and then adjust the process for forming the stripe pattern based on the size adjustment value, specifically adjust the size of the mandrel graphic to achieve pattern adjustment.

[0099] Please continue to refer to Fig.11 , assuming that the standard value is 0.49, the corresponding mandrel figure size is approximately 47.1 and 48.6, that is, the standard size is 47.1 and 48.6; providing the standard deviation of the size of any even column is approximately 1.3, the corresponding mandrel figure size is approximately 51.5 in the correlation diagram, that is, the reference size is 51.5, and the minimum difference between the standard size and the reference size is obtained as the size adjustment value of the mandrel figure. Here, the minimum difference between the standard size and the reference size is 2.9, which represents a size adjustment value of 2.9. The size of the mandrel figure is adjusted according to the size adjustment value, and the size of the mandrel figure is reduced by 2.9.

[0100] In this embodiment, in the process of forming the stripe pattern, the size of the pattern formed in each step can also be measured, and the pattern formed in each step can be appropriately adjusted. Specifically, after forming the first side wall pattern, the total size A1 of the mandrel pattern and the first side wall pattern of the two side walls of the mandrel pattern is measured (reference Figure 3 ) and compared with the first preset value range, wherein the first preset value can be obtained by calculation. Since the mandrel figure is converted from the initial mandrel figure, it can be calculated with the initial mandrel figure size. The initial mandrel figure can be set to 50nm by the machine, and then the sidewall is deposited by atomic layer chemical vapor deposition. At this time, the thickness of the sidewall is set by the machine. Assuming the thickness is 10nm, it can be concluded that the first preset value should be 70nm. Then the first preset value range can fluctuate around 70nm according to the first preset value. The specific setting value range can be set according to the requirements of different processes and is not limited here. For example, it can be 70±0.0003*70nm. When the total size A1 of the first side wall figure of the mandrel figure and the two side walls of the mandrel figure is not within the first preset value range, the first side wall figure is adjusted; after removing the mandrel figure, the size A2 of the first side wall figure is measured and compared with the second preset value range. At this time, the size A2 of the first side wall figure (reference Figure 4) is the size of the side wall through atomic layer chemical vapor deposition, which should be the aforementioned 10nm, and its range value can be 10nm±0.0003*10nm; when the size A2 of the first side wall pattern is not within the second preset value range, the first side wall pattern is adjusted. After forming the second side wall pattern, measure the total size A3 of the second side wall pattern of the transfer pattern and the two side walls of the transfer pattern (reference Figure 6 ) and compared with the third preset value range, when the total size A3 of the transfer pattern and the second side wall pattern on both sides of the transfer pattern is not within the third preset value range, the second side wall pattern is adjusted; after removing the transfer pattern, the size A4 of the second side wall pattern is measured (reference Figure 7 ) and compared with the fourth preset value range. When the size A4 of the second side wall graphic is not within the fourth preset value range, the second side wall graphic is adjusted. The third preset value range and the fourth preset value range can refer to the value selection method of the first preset value, which will not be repeated here.

[0101] Embodiment 2

[0102] This embodiment provides a pattern measurement method, including:

[0103] Step S1: providing a substrate, wherein the substrate includes a plurality of sub-regions;

[0104] Step S2: forming a plurality of stripe patterns arranged at intervals on the sub-areas by a multiple exposure process, with the stripe patterns being used as odd-numbered columns, and the spacing patterns between adjacent stripe patterns being used as even-numbered columns;

[0105] Step S3: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0106] Step S4: providing a standard value;

[0107] Step S5: Compare the standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns with the standard value.

[0108] Figure 12 to Figure 15 The following is a cross-sectional schematic diagram of each step of forming a stripe pattern in a pattern measurement method provided in this embodiment. Figure 12 to Figure 15 A pattern measurement method provided in this embodiment is described in detail.

[0109] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process size in each sub-region can be the same or different, the size of the core shaft pattern subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0110] Execute step S2: form a plurality of stripe patterns arranged at intervals on the sub-regions through a multiple exposure process. Specifically, the steps of the multiple exposure process include:

[0111] Please refer to Fig.12 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 The horizontal dimension in the figure can be understood as Figure 2 A sub-region is shown, and the size of the mandrel pattern of each sub-region is the same or different. Among them, the silicon oxide layer 20, the amorphous silicon layer 30, the silicon nitride layer 40, the first APF (Advanced Patterning Film) layer 51, the silicon carbide nitride layer 60, the second APF layer 52, and the silicon oxynitride layer 70 are all mask layers, and the mask layers can be modified according to different process requirements, which is not limited here; the anti-reflective coating layer 80 can be used according to the application scenario, which is not limited here.

[0112] Please refer to Fig.13 , the pattern is transferred according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, the sidewall patterns 100 located on both sides of the mandrel pattern are formed, and the sidewall patterns 100 are also located on the top of the mandrel pattern and part of the surface of the silicon carbide nitride layer 60. The sidewall patterns 100 are formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small degree of variation. Please refer to Fig.14 , remove the second APF layer 52 and the silicon oxynitride layer 70 (mandrel pattern) and part of the sidewall pattern 100, and retain the sidewall pattern 100 located on both sides of the mandrel pattern.

[0113] Please refer to Fig.15 , a pattern transfer is performed according to the sidewall pattern 100, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a, and the stripe pattern 40a is used as an odd column 210, and the spacing pattern between adjacent stripe patterns 40a is used as an even column 220, and the odd columns 210 and the even columns 220 are arranged alternately; the sidewall pattern 100 is removed during the pattern transfer process.

[0114] Fig.16 This is a cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in this embodiment. Please refer to Fig.16 , Fig.16FIG. 4 shows a partial cross-sectional comparison diagram of forming a stripe pattern 40a. Several cross-sectional diagrams are arranged from top to bottom in the vertical direction according to the preparation order, and dotted lines are used to align each pattern in each cross section to reflect the difference before and after the pattern transfer. Fig.16 It can be seen that the odd-numbered columns 210 are in the vertical direction ( Fig.16 In the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are etched using the initial mandrel pattern 90 as a mask to transfer the pattern. The initial mandrel pattern 90 will be removed by etching during the transfer. Etching generally uses an etching gas or an etching solution. It is difficult to control the etching accuracy of the etching gas or the etching solution, which will cause the mandrel pattern formed after the transfer to have a size deviation. The sidewall pattern 100 is formed by atomic layer chemical vapor deposition. Atomic layer chemical vapor deposition can accurately control the thickness of the sidewall pattern 100. By controlling the thickness of the sidewall pattern 100, the size of the odd-numbered columns 210 can be accurately controlled. Therefore, the standard deviation of the size of the odd-numbered columns 210 will be smaller.

[0115] Please continue to refer to Fig.15 , execute step S3: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size of different positions on the odd column 210 and then calculating the average value, and the size d2 of each even column 220 can be obtained by measuring the size of different positions on the even column 220 and then calculating the average value; then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained according to the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained according to the size d2 of the several even columns 220.

[0116] Execute step S4: provide a standard value. In this embodiment, the standard value is used to measure whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements. Since the standard deviation of the size of the odd columns is smaller and better meets the process requirements, the value of the maximum standard deviation of the odd columns is preferably used as the standard value. The standard value can also be set.

[0117] Execute step S5: compare the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns with the standard value, so as to know whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements, and evaluate the size deviation of the odd columns and the size deviation of the even columns, so as to realize the measurement of the pattern.

[0118] This embodiment also provides a method for adjusting a pattern, including:

[0119] Step S1: providing a substrate, wherein the substrate includes a plurality of sub-regions;

[0120] Step S2: forming mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns on the sub-regions;

[0121] Step S3: removing the mandrel pattern;

[0122] Step S4: forming a plurality of stripe patterns arranged at intervals on the sub-areas, with the stripe patterns being odd-numbered columns, and the spacing patterns between adjacent stripe patterns being even-numbered columns, and the odd-numbered columns being aligned with the sidewall patterns in a vertical direction;

[0123] Step S5: removing the side wall pattern;

[0124] Step S6: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0125] Step S7: taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region;

[0126] Step S8: determining a size adjustment value of the mandrel pattern according to the standard value and the correlation diagram, and adjusting a process for forming the stripe pattern based on the size adjustment value.

[0127] Next, combine Figure 12 to Figure 15 A pattern adjustment method provided in this embodiment is described in detail.

[0128] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process size in each sub-region can be the same or different, that is, the size of the core shaft pattern subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0129] Step S2 is performed: forming mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns on the sub-areas. The steps of forming the mandrel patterns and the sidewall patterns include:

[0130] Please continue to refer to Fig.12 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 The horizontal dimension in the figure can be understood as Figure 2A sub-region is shown, and the size of the mandrel pattern of each sub-region is the same or different. Among them, the silicon oxide layer 20, the amorphous silicon layer 30, the silicon nitride layer 40, the first APF (Advanced Patterning Film) layer 51, the silicon carbide nitride layer 60, the second APF layer 52, and the silicon oxynitride layer 70 are all mask layers, and the mask layers can be modified according to different process requirements, which is not limited here; the anti-reflective coating layer 80 can be used according to the application scenario, which is not limited here.

[0131] Please continue to refer to Fig.13 , a pattern transfer is performed according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, a sidewall pattern 100 is formed on both sides of the mandrel pattern. The sidewall pattern 100 is also located on the top of the mandrel pattern and a part of the surface of the silicon carbide nitride layer 60. The sidewall pattern 100 is formed by atomic layer chemical vapor deposition because the pattern formed by atomic layer chemical vapor deposition has a smaller degree of variation.

[0132] Execute step S3: Please continue to refer to Fig.14 , remove the mandrel pattern (the second APF layer 52 and the silicon oxynitride layer 70) and the sidewall pattern 100, and retain the sidewall pattern 100 located on both sides of the mandrel pattern.

[0133] Execute step S4: form a plurality of stripe patterns arranged at intervals on the sub-region, the step of forming the stripe pattern comprises: performing pattern transfer according to the sidewall pattern 100, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a, the stripe pattern 40a is used as an odd column 210, and the spacing pattern between adjacent stripe patterns 40a is used as an even column 220, and the odd column 210 and the even column 220 are arranged at intervals. Please continue to refer to Fig.16 , the odd-numbered columns 210 are aligned with the sidewall patterns 100 in the vertical direction.

[0134] Execute step S5: the sidewall pattern is removed during the pattern transfer process.

[0135] Please continue to refer to Fig.15, execute step S6: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size of different positions on the odd column 210 and then calculating the average value, and the size d2 of each even column 220 can be obtained by measuring the size of different positions on the even column 220 and then calculating the average value; then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained according to the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained according to the size d2 of the several even columns 220.

[0136] Execute step S7: take the value of any standard deviation of the size of the odd-numbered columns as the standard value. The standard value is used to measure whether the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns meet the process requirements. Since the standard deviation of the size of the odd-numbered columns is smaller and more in line with the process requirements, the value of the maximum standard deviation of the size of the odd-numbered columns is preferably used as the standard value. Furthermore, a correlation diagram is established based on the size of the mandrel pattern of each sub-area and the standard deviation of the size of the odd-numbered columns of each sub-area. The size of the mandrel pattern of each sub-area is different, which generally leads to differences in the standard deviation of the size of the odd-numbered columns of each sub-area, so it is necessary to establish a correlation diagram between the two. In this embodiment, since the odd-numbered columns are aligned with the sidewall pattern in the vertical direction, the value of any standard deviation of the size of the odd-numbered columns is selected as the standard value; however, in actual situations, the value of any standard deviation of the size of the odd-numbered columns or even-numbered columns aligned with the sidewall pattern is selected as the standard value.

[0137] Execute step S8: determine the size adjustment value of the mandrel graphic according to the standard value (the value of the maximum standard deviation of the sizes of the odd-numbered columns can be taken) and the correlation diagram. Specifically, obtain the size of the corresponding mandrel graphic in the correlation diagram according to the standard value as the standard size, and obtain the size of the corresponding mandrel graphic in the correlation diagram according to the standard deviation of the sizes of any even-numbered columns as the reference size, obtain the minimum difference between the standard size and the reference size as the size adjustment value of the mandrel graphic, and then adjust the process for forming the stripe pattern based on the size adjustment value, specifically adjust the size of the mandrel graphic to achieve pattern adjustment.

[0138] In this embodiment, in the process of forming the stripe pattern, the size of the pattern formed in each step can also be measured, and the pattern formed in each step can be appropriately adjusted. Specifically, after forming the sidewall pattern, the total size A1 of the sidewall pattern of the mandrel pattern and the two side walls of the mandrel pattern is measured (reference Fig.13) and compared with the first preset value range, wherein the first preset value can be obtained by calculation. Since the mandrel figure is converted from the initial mandrel figure, it can be calculated based on the size of the initial mandrel figure. The initial mandrel figure can be set to 50nm by the machine, and then the sidewall is deposited by atomic layer chemical vapor deposition. At this time, the thickness of the sidewall is set by the machine. Assuming the thickness is 10nm, it can be concluded that the first preset value should be 70nm. Then the first preset value range can fluctuate around 70nm according to the first preset value. The specific setting value range can be set according to the requirements of different processes and is not limited here. For example, it can be 70±0.0003*70nm. When the total size A1 of the sidewall figure of the mandrel figure and the two side walls of the mandrel figure is not within the first preset value range, the sidewall figure is adjusted; after removing the mandrel figure, the size A2 of the sidewall figure is measured and compared with the second preset value range. At this time, the size A2 of the first sidewall figure (reference Fig.14 ) is the size of the side wall deposited by atomic layer chemical vapor deposition, which should be the aforementioned 10nm, and its range value can be 10nm±0.0003*10nm; when the size A2 of the side wall pattern is not within the second preset value range, the side wall pattern is adjusted.

[0139] In summary, in a pattern measurement method provided by the present invention, a plurality of spaced-apart strip patterns are formed on a sub-region through multiple exposure processes, and then the spacing patterns between adjacent strip patterns in the sub-region are divided into odd columns and even columns with the strip patterns as intervals, or the strip patterns are used as odd columns, and the spacing patterns between adjacent strip patterns are used as even columns; then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are compared with the provided standard values, so that the size deviations of the odd columns and the even columns can be known, thereby realizing the measurement of the pattern.

[0140] In a pattern adjustment method provided by the present invention, core axis patterns arranged at intervals from each other and side wall patterns located on both sides of the core axis patterns are formed on the sub-area; further, a plurality of stripe patterns arranged at intervals are formed on the sub-area, and the spacing patterns between adjacent stripe patterns in the sub-area are divided into odd columns and even columns with the stripe patterns as intervals, or the stripe patterns are used as odd columns, and the spacing patterns between adjacent stripe patterns are used as even columns, and the odd columns are aligned with the side wall patterns in the vertical direction; the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and the value of any standard deviation of the size of the odd columns is used as the standard value, and a correlation diagram is established according to the size of the core axis pattern of each sub-area and the standard deviation of the size of the odd columns of each sub-area; the size adjustment value of the core axis pattern is determined according to the standard value and the correlation diagram, and the process for forming the stripe pattern is adjusted based on the size adjustment value, and the process for forming the stripe pattern is adjusted, thereby achieving pattern adjustment.

[0141] The above is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any technician in the relevant technical field, without departing from the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the content of the technical solution of the present invention and still falls within the protection scope of the present invention.

Claims

1. A method for measuring a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; Forming a plurality of stripe patterns arranged at intervals on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals; Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns; Provide a standard value; The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

2. A method for measuring a pattern according to claim 1, characterized in that: The multiple exposure process comprises: Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

3. A method for measuring a pattern according to claim 2, characterized in that: The sidewall pattern is formed by atomic layer chemical vapor deposition.

4. A method for measuring a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; Forming a plurality of stripe patterns arranged at intervals on the sub-areas by a multiple exposure process, wherein the stripe patterns are used as odd-numbered columns, and the spacing patterns between adjacent stripe patterns are used as even-numbered columns; Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns; Provide a standard value; The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

5. A method for measuring a pattern according to claim 4, characterized in that: The multiple exposure process comprises: Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

6. A method for measuring a pattern according to claim 5, characterized in that: The sidewall pattern is formed by atomic layer chemical vapor deposition.

7. A method for adjusting a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming core shaft patterns arranged at intervals from each other and side wall patterns located on both sides of the core shaft patterns on the sub-regions; removing the mandrel pattern; forming a plurality of stripe patterns arranged at intervals on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, and aligning the odd columns with the sidewall pattern in the vertical direction; removing the side wall pattern; Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns; Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each of the sub-regions and the standard deviation of the size of the odd-numbered columns of each of the sub-regions; A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

8. A method for adjusting a pattern according to claim 7, characterized in that: The maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

9. The method for adjusting a pattern according to claim 7, characterized in that: The sidewall pattern is formed by atomic layer chemical vapor deposition.

10. The method for adjusting a pattern according to claim 7, characterized in that: The side wall graphics located on both sides of the core shaft graphic are used as the first side wall graphics. After the first side wall graphics are formed, the total size of the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is measured and compared with a first preset value range. When the total size of the first side wall graphics on the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is not within the first preset value range, the first side wall graphics is adjusted. After removing the core shaft graphic, the size of the first side wall graphics is measured and compared with a second preset value range. When the size of the first side wall graphics is not within the second preset value range, the first side wall graphics is adjusted.

11. A method for adjusting a pattern according to claim 10, characterized in that: The formation of a plurality of spaced-apart strip patterns on the sub-area includes: performing a pattern transfer according to the first sidewall pattern to form a second sidewall pattern located on both side walls of the transfer pattern, and removing the transfer pattern; after forming the second sidewall pattern, measuring the total size of the transfer pattern and the second sidewall pattern on both side walls of the transfer pattern and comparing it with a third preset value range, and when the total size of the transfer pattern and the second sidewall pattern on both side walls of the transfer pattern is not within the third preset value range, adjusting the second sidewall pattern; after removing the transfer pattern, measuring the size of the second sidewall pattern and comparing it with a fourth preset value range, and when the size of the second sidewall pattern is not within the fourth preset value range, adjusting the second sidewall pattern.

12. A method for adjusting a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming core shaft patterns arranged at intervals from each other and side wall patterns located on both sides of the core shaft patterns on the sub-regions; removing the mandrel pattern; forming a plurality of stripe patterns arranged at intervals on the sub-region, wherein the stripe patterns are used as odd-numbered columns, and spacing patterns between adjacent stripe patterns are used as even-numbered columns, wherein the odd-numbered columns are aligned with the sidewall patterns in a vertical direction; removing the side wall pattern; Calculating a standard deviation of the sizes of the odd columns and a standard deviation of the sizes of the even columns; Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation diagram according to the size of the mandrel pattern of each of the sub-regions and the standard deviation of the size of the odd-numbered columns of each of the sub-regions; A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

13. A method for adjusting a pattern according to claim 12, characterized in that: The maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

14. A method for adjusting a pattern according to claim 12, characterized in that: The sidewall pattern is formed by atomic layer chemical vapor deposition.

15. The method for adjusting a pattern according to claim 12, characterized in that: After forming the sidewall pattern, the total size of the mandrel pattern and the sidewall pattern on both sides of the mandrel pattern is measured and compared with a first preset value range. When the total size of the mandrel pattern and the sidewall pattern on both sides of the mandrel pattern is not within the first preset value range, the sidewall pattern is adjusted. After removing the mandrel pattern, the size of the sidewall pattern is measured and compared with a second preset value range. When the size of the sidewall pattern is not within the second preset value range, the sidewall pattern is adjusted.

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