Method for measuring and adjusting a pattern

Abstract

The application provides a pattern measurement method and adjustment method, which comprises the following steps: forming a plurality of spaced strip patterns on a sub-region through a plurality of exposure processes, then dividing the spacing pattern between adjacent strip patterns in the sub-region into odd-numbered columns and even-numbered columns by taking the strip patterns as intervals, or dividing the strip patterns into odd-numbered columns and even-numbered columns; then calculating the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns, and comparing the standard deviation of the size of the odd-numbered columns and the standard deviation of the size of the even-numbered columns with a provided standard value, so as to obtain the size deviation of the odd-numbered columns and the even-numbered columns, realize the measurement of the pattern, and adjust the process of forming the strip pattern, so as to realize the adjustment of the pattern.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a pattern measuring method and an adjustment method. Background Art

[0002] In the semiconductor manufacturing process, self-aligned double patterning (SADP) and self-aligned quadruple patterning (SAQP) are common manufacturing processes that can obtain patterns with small pitches. In the self-aligned double patterning process and the self-aligned quadruple patterning process, the spacing of the formed strip patterns may be required to be the same to meet the current process requirements. However, in the manufacturing process, there may be process deviations that cause the spacing between any adjacent strip patterns to be different, that is, there is pitch walking (pitch drift), which will affect the manufacturing of semiconductor devices. Therefore, it is necessary to measure pitch walking to keep it within a reasonable range to meet the process requirements. Summary of the Invention

[0003] The purpose of the present invention is to provide a pattern measurement method and an adjustment method to achieve pattern measurement and adjustment.

[0004] In order to achieve the above object, the present invention provides a method for measuring a pattern, comprising:

[0005] providing a substrate, the substrate comprising a plurality of sub-regions;

[0006] forming a plurality of spaced-apart stripe patterns on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals;

[0007] Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns;

[0008] Provide a standard value;

[0009] The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

[0010] Optionally, the multiple exposure process includes:

[0011] Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

[0012] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0013] The present invention provides a method for measuring a pattern, comprising:

[0014] providing a substrate, the substrate comprising a plurality of sub-regions;

[0015] forming a plurality of spaced stripe patterns on the sub-areas by a multiple exposure process, with the stripe patterns serving as odd-numbered columns and spacing patterns between adjacent stripe patterns serving as even-numbered columns;

[0016] Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns;

[0017] Provide a standard value;

[0018] The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

[0019] Optionally, the multiple exposure process includes:

[0020] Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

[0021] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0022] The present invention provides a method for adjusting a pattern, comprising:

[0023] providing a substrate, the substrate comprising a plurality of sub-regions;

[0024] forming core shaft patterns spaced apart from each other and sidewall patterns on both sides of the core shaft patterns on the sub-region;

[0025] removing the mandrel pattern;

[0026] forming a plurality of stripe patterns arranged at intervals on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, wherein the odd columns are aligned with the sidewall pattern in a vertical direction;

[0027] removing the sidewall graphics;

[0028] Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns;

[0029] Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation graph according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region;

[0030] A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

[0031] Optionally, the maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

[0032] Optionally, the sidewall pattern is formed by atomic layer chemical vapor deposition.

[0033] Optionally, the sidewall graphics located on both sides of the core shaft graphic serve as the first sidewall graphics. After the first sidewall graphics are formed, the total size of the core shaft graphic and the first sidewall graphics on both sides of the core shaft graphic is measured and compared with a first preset value range. When the total size of the core shaft graphic and the first sidewall graphics on both sides of the core shaft graphic is not within the first preset value range, the first sidewall graphic is adjusted. After removing the core shaft graphic, the size of the first sidewall graphic is measured and compared with a second preset value range. When the size of the first sidewall graphic is not within the second preset value range, the first sidewall graphic is adjusted.

[0034] Optionally, forming a plurality of spaced-apart strip patterns on the sub-area includes: performing a graphic transfer according to the first sidewall graphic to form a second sidewall graphic located on both side walls of the transfer graphic, and removing the transfer graphic; after forming the second sidewall graphic, measuring the total size of the transfer graphic and the second sidewall graphic on both side walls of the transfer graphic and comparing it with a third preset value range, and when the total size of the transfer graphic and the second sidewall graphic on both side walls of the transfer graphic is not within the third preset value range, adjusting the second sidewall graphic; after removing the transfer graphic, measuring the size of the second sidewall graphic and comparing it with a fourth preset value range, and when the size of the second sidewall graphic is not within the fourth preset value range, adjusting the second sidewall graphic.

[0035] The present invention provides a method for adjusting a pattern, comprising:

[0036] providing a substrate, the substrate comprising a plurality of sub-regions;

[0037] forming core shaft patterns spaced apart from each other and sidewall patterns on both sides of the core shaft patterns on the sub-region;

[0038] removing the mandrel pattern;

[0039] forming a plurality of stripe patterns arranged at intervals on the sub-region, with the stripe patterns serving as odd-numbered columns and spacing patterns between adjacent stripe patterns serving as even-numbered columns, wherein the odd-numbered columns are aligned with the sidewall patterns in a vertical direction;

[0040] removing the sidewall graphics;

[0041] calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns;

[0042] taking a value of any one of the standard deviations of the sizes of the odd-numbered columns as a standard value, and establishing a correlation graph according to the size of the mandrel pattern of each of the sub-regions and the standard deviation of the sizes of the odd-numbered columns of each of the sub-regions;

[0043] determining a size adjustment value of the mandrel pattern according to the standard value and the correlation graph, and adjusting a process for forming the bar pattern based on the size adjustment value.

[0044] Optionally, a value of a maximum standard deviation of the sizes of the odd-numbered columns is taken as the standard value.

[0045] Optionally, the side wall pattern is formed by atomic layer chemical vapor deposition.

[0046] Optionally, after the side wall pattern is formed, a total size of the mandrel pattern and the side wall pattern on both sides of the mandrel pattern is measured and compared with a first preset value range, and when the total size of the mandrel pattern and the side wall pattern on both sides of the mandrel pattern is not within the first preset value range, the side wall pattern is adjusted; after the mandrel pattern is removed, a size of the side wall pattern is measured and compared with a second preset value range, and when the size of the side wall pattern is not within the second preset value range, the side wall pattern is adjusted.

[0047] In the measurement method of the pattern provided by the present application, a plurality of bar patterns arranged at intervals are formed on a sub-region through a plurality of exposure processes, then the spacing pattern between adjacent bar patterns in the sub-region is divided into odd-numbered columns and even-numbered columns by taking the bar pattern as the interval, or the bar pattern is taken as the odd-numbered column and the spacing pattern between adjacent bar patterns is taken as the even-numbered column; then a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns are calculated, and the standard deviations of the sizes of the odd-numbered columns and the even-numbered columns are compared with a provided standard value, so that the size deviation of the odd-numbered columns and the even-numbered columns can be known, thereby realizing the measurement of the pattern.

[0048] In a pattern adjustment method provided by the present invention, core axis patterns arranged at intervals from each other and side wall patterns located on both sides of the core axis patterns are formed on the sub-area; further, a plurality of spaced stripe patterns are formed on the sub-area, and the spacing patterns between adjacent stripe patterns in the sub-area are divided into odd columns and even columns with the stripe patterns as intervals, or the stripe patterns are used as odd columns, and the spacing patterns between adjacent stripe patterns are used as even columns, and the odd columns are aligned with the side wall patterns in the vertical direction; the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and the value of any standard deviation of the size of the odd columns is used as the standard value, and a correlation graph is established according to the size of the core axis pattern of each sub-area and the standard deviation of the size of the odd columns of each sub-area; the size adjustment value of the core axis pattern is determined according to the standard value and the correlation graph, and the process for forming the stripe pattern is adjusted based on the size adjustment value, and the process for forming the stripe pattern is adjusted, thereby achieving pattern adjustment. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] Figure 1 This is a flow chart of a pattern measurement method provided in Example 1 of the present invention.

[0050] Figures 2 to 8 This is a cross-sectional schematic diagram of the steps of forming a stripe pattern in a pattern measurement method provided in Example 1 of the present invention.

[0051] Figure 9 A schematic cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in Example 1 of the present invention.

[0052] Figure 10 This is a flow chart of a pattern adjustment method provided in Example 1 of the present invention.

[0053] Figure 11 This is a correlation diagram of a pattern adjustment method provided in Example 1 of the present invention.

[0054] Figures 12 to 15 This is a cross-sectional schematic diagram of the steps of forming a stripe pattern in a pattern measurement method provided in the second embodiment of the present invention.

[0055] Figure 16 A schematic cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in the second embodiment of the present invention.

[0056] Wherein, the accompanying drawings are marked as follows:

[0057] 10-substrate; 20-silicon oxide layer; 30-amorphous silicon layer; 40-silicon nitride layer; 40a-strip pattern; 51-first APF layer; 52-second APF layer; 60-silicon carbide nitride layer; 70-silicon oxynitride layer; 80-antireflective coating; 90-initial core axis pattern; 100-sidewall pattern; 110-first sidewall pattern; 120-second sidewall pattern; 130-transfer pattern; 210-odd columns; 220-even columns. DETAILED DESCRIPTION

[0058] To make the objects, advantages, and features of the present invention more clearly apparent, the present invention is further described below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale. They are only used to conveniently and clearly assist in illustrating the purposes of the embodiments of the present invention. In addition, the structures shown in the drawings are often part of the actual structure. In particular, different drawings may need to illustrate different focuses and sometimes use different scales.

[0059] Example 1

[0060] Figure 1 This is a flow chart of a pattern measurement method provided in this embodiment. Please refer to Figure 1 , this embodiment provides a pattern measurement method, including:

[0061] Step S1: providing a substrate, the substrate including a plurality of sub-regions;

[0062] Step S2: forming a plurality of spaced stripe patterns on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals;

[0063] Step S3: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0064] Step S4: providing a standard value;

[0065] Step S5: Compare the standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns with the standard value.

[0066] Figures 2 to 8 This is a schematic cross-sectional view of each step of forming a stripe pattern in a pattern measurement method provided in this embodiment. Figures 2 to 8 A pattern measurement method provided in this embodiment is described in detail.

[0067] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process dimensions in each sub-region can be the same or different, the dimensions of the core shaft patterns subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0068] Performing step S2: forming a plurality of spaced strip patterns on the sub-regions by a multiple exposure process, specifically, the steps of the multiple exposure process include:

[0069] Please refer to Figure 2 , the substrate 10 is sequentially formed from bottom to top with a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbon nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90, wherein the initial mandrel patterns 90 are spaced apart from each other, the initial mandrel patterns 90 are photolithography patterns, and the size of the initial mandrel patterns 90 is S( Figure 2 The lateral dimension in Figure 2 schematically shows a sub-region, and the size of the mandrel pattern in each sub-region is the same or different. Among them, the silicon oxide layer 20, the amorphous silicon layer 30, the silicon nitride layer 40, the first APF (Advanced Patterning Film) layer 51, the silicon carbon nitride layer 60, the second APF layer 52, and the silicon oxynitride layer 70 are mask layers, which can be modified according to different process requirements, and are not limited here; the anti-reflective coating 80 can be determined according to the application scene whether to use, which is not limited here.

[0070] Please refer to Figure 3 According to the initial mandrel pattern 90, the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70, and after the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel pattern; further, the side wall pattern located on both sides of the mandrel pattern is formed, which is the first side wall pattern 110, the first side wall pattern 110 is also located on the top of the mandrel pattern and part of the surface of the silicon carbon nitride layer 60, and the first side wall pattern 110 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has smaller variation. Please refer to Figure 4 Remove the second APF layer 52 and the silicon oxynitride layer 70 (mandrel pattern) and part of the first side wall pattern 110, and retain the first side wall pattern 110 located on both sides of the mandrel pattern.

[0071] Please refer to Figure 5 According to the first side wall pattern 110, the pattern is transferred to the first APF layer 51 and the silicon carbon nitride layer 60 to form a transfer pattern 130, and the first side wall pattern 110 is removed during the pattern transfer process. Please refer to Figure 6, forming the second sidewall pattern 120 located on both side walls of the transfer pattern 130, and the second sidewall pattern 120 is also located on the top of the transfer pattern 130 and part of the surface of the silicon nitride layer 40. The second sidewall pattern 120 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small degree of variation. Please refer to Figure 7 , remove the transfer pattern 130 and part of the second sidewall pattern 120, and retain the second sidewall pattern 120 located on both sides of the transfer pattern 130.

[0072] Please refer to Figure 8 , a pattern transfer is performed based on the second sidewall pattern 120, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a. In this embodiment, the spacing pattern between adjacent stripe patterns 40a in the sub-region is divided into odd columns 210 and even columns 220 with the stripe pattern 40a as the interval, and the odd columns 210 and the even columns 220 are arranged at intervals; the second sidewall pattern 120 is removed during the pattern transfer process.

[0073] Figure 9 This is a cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in this embodiment. Figure 9 , Figure 9 The diagram of the cross section of the strip pattern 40a is shown in FIG. 4 , and the cross section diagrams are arranged vertically from top to bottom in the order of preparation. The dotted lines are used to align the patterns in the cross sections to reflect the differences before and after the pattern transfer. Figure 9 It can be seen that the odd columns 210 are in the vertical direction ( Figure 9 The first sidewall pattern 110 is aligned with the sidewall pattern (first sidewall pattern 110) in the longitudinal direction (in the longitudinal direction). The first sidewall pattern 110 is not only formed by atomic layer chemical vapor deposition but is also in the initial stage of pattern transfer. Atomic layer chemical vapor deposition can accurately control the thickness of the first sidewall pattern 110, and the deviation of the pattern transfer in the initial stage is small. By controlling the thickness of the first sidewall pattern 110, the size of the odd-numbered columns 210 can be accurately controlled, so the standard deviation of the size of the odd-numbered columns 210 is small. However, after multiple pattern transfers, the size deviation of the even-numbered columns 220 is large, resulting in a large standard deviation of the size of the even-numbered columns 220. The standard deviation of the size of the even-numbered columns 220 is greater than the standard deviation of the size of the odd-numbered columns 210. The smaller the standard deviation, the more it meets the process requirements.

[0074] Please continue to refer to Figure 8, execute step S3: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size at different positions on the odd column 210 and then calculating the average value. The size d2 of each even column 220 can be obtained by measuring the size at different positions on the even column 220 and then calculating the average value. Then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained based on the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained based on the size d2 of the several even columns 220.

[0075] Execute step S4: provide a standard value. In this embodiment, the standard value is used to measure whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements. Since the standard deviation of the size of the odd columns is smaller and more in line with the process requirements, the value of the maximum standard deviation of the odd columns is preferably used as the standard value. The standard value can also be set.

[0076] Execute step S5: compare the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns with the standard value, so as to know whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements, and evaluate the size deviation of the odd columns and the size deviation of the even columns, thereby realizing pattern measurement.

[0077] Figure 10 This is a flow chart of a pattern adjustment method provided in this embodiment. Please refer to Figure 10 This embodiment further provides a pattern adjustment method, including:

[0078] Step S1: providing a substrate, the substrate including a plurality of sub-regions;

[0079] Step S2: forming mandrel patterns spaced apart from each other and sidewall patterns on both sides of the mandrel patterns on the sub-regions;

[0080] Step S3: removing the mandrel pattern;

[0081] Step S4: forming a plurality of spaced stripe patterns on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, and aligning the odd columns with the sidewall pattern in the vertical direction;

[0082] Step S5: removing the sidewall pattern;

[0083] Step S6: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0084] Step S7: using any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation graph based on the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region;

[0085] Step S8: determining a size adjustment value of the mandrel pattern according to the standard value and the correlation graph, and adjusting a process for forming the stripe pattern based on the size adjustment value.

[0086] Next, combine Figures 2 to 8 A pattern adjustment method provided in this embodiment is described in detail.

[0087] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process dimensions in each sub-region can be the same or different, that is, the dimensions of the core shaft patterns subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0088] Execute step S2: forming mandrel patterns spaced apart from each other and sidewall patterns on both sides of the mandrel patterns on the sub-areas. The steps of forming the mandrel patterns and the sidewall patterns include:

[0089] Please continue to refer to Figure 2 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 ), can be understood as Figure 2 The diagram illustrates a subregion, with the mandrel patterns in each subregion having the same or different sizes. Silicon oxide layer 20, amorphous silicon layer 30, silicon nitride layer 40, first Advanced Patterning Film (APF) layer 51, silicon carbide nitride layer 60, second APF layer 52, and silicon oxynitride layer 70 are all mask layers, which can be modified based on different process requirements and are not limited here. The use of anti-reflective coating 80 can be determined based on the application scenario and is not limited here.

[0090] Please continue to refer to Figure 3, a pattern transfer is performed according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, a sidewall pattern is formed on both sides of the mandrel pattern, and this sidewall pattern is the first sidewall pattern 110. The first sidewall pattern 110 is also located on the top of the mandrel pattern and part of the surface of the silicon carbide nitride layer 60. The first sidewall pattern 110 is formed by atomic layer chemical vapor deposition because the pattern formed by atomic layer chemical vapor deposition has a smaller degree of variation.

[0091] Execute step S3: Please continue to refer to Figure 4 , remove the mandrel pattern (the second APF layer 52 and the silicon oxynitride layer 70) and part of the first sidewall pattern 110, and retain the first sidewall pattern 110 on both sides of the mandrel pattern.

[0092] Execute step S4: forming a plurality of stripe patterns arranged at intervals on the sub-area. The steps of forming the stripe pattern include: Figure 5 , a pattern transfer is performed based on the first sidewall pattern 110, so that the pattern is transferred to the first APF layer 51 and the silicon carbide nitride layer 60 to form a transfer pattern 130. Please continue to refer to Figure 6 , forming the second sidewall pattern 120 located on both side walls of the transfer pattern 130, and the second sidewall pattern 120 is also located on the top of the transfer pattern 130 and part of the surface of the silicon nitride layer 40. The second sidewall pattern 120 is formed by atomic layer chemical vapor deposition, because the pattern formed by atomic layer chemical vapor deposition has a small degree of variation. Please continue to refer to Figure 7 , remove the transfer pattern 130 and part of the second sidewall pattern 120, and retain the second sidewall pattern 120 located on both sides of the transfer pattern 130.

[0093] Please continue to refer to Figure 8 , the pattern is transferred according to the second sidewall pattern 120, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a. In this embodiment, the spacing pattern between adjacent stripe patterns 40a in the sub-region is divided into odd columns 210 and even columns 220 with the stripe pattern 40a as the interval, and the odd columns 210 and the even columns 220 are arranged alternately. Please continue to refer to Figure 9 , the odd-numbered columns 210 are aligned with the sidewall patterns (first sidewall patterns 110) in the vertical direction.

[0094] Executing step S5: the first sidewall pattern and the second sidewall pattern are removed during the pattern transfer process.

[0095] Please continue to refer to Figure 8, execute step S6: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size at different positions on the odd column 210 and then calculating the average value. The size d2 of each even column 220 can be obtained by measuring the size at different positions on the even column 220 and then calculating the average value. Then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained based on the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained based on the size d2 of the several even columns 220.

[0096] Execute step S7: Use any standard deviation of the dimensions of the odd-numbered columns as the standard value. The standard value is used to measure whether the standard deviation of the dimensions of the odd-numbered columns and the standard deviation of the dimensions of the even-numbered columns meet process requirements. Since the standard deviation of the dimensions of the odd-numbered columns is smaller and more consistent with process requirements, the maximum standard deviation of the dimensions of the odd-numbered columns is preferably used as the standard value. Furthermore, a correlation graph is established based on the size of the mandrel pattern in each sub-region and the standard deviation of the dimensions of the odd-numbered columns in each sub-region. The different sizes of the mandrel patterns in each sub-region generally result in different standard deviations of the dimensions of the odd-numbered columns in each sub-region, so a correlation graph needs to be established between the two. In this embodiment, since the odd-numbered columns are vertically aligned with the sidewall pattern (first sidewall pattern 110), any standard deviation of the dimensions of the odd-numbered columns is selected as the standard value. However, in actual practice, any standard deviation of the dimensions of the odd-numbered columns or even-numbered columns aligned with the sidewall pattern (first sidewall pattern 110) is selected as the standard value.

[0097] Figure 11 This is a correlation diagram of a pattern adjustment method provided in this embodiment. Please refer to Figure 11 The horizontal axis is the size of the mandrel pattern of each sub-region (45-53, in nm), and the vertical axis is the standard deviation of the size of the odd-numbered columns (0.2-1.4). Figure 11 The size of the core axis pattern is shown in the figure as 46, 48, 50 and 52, and the standard deviation of the size of the corresponding odd columns is 0.9, 0.31, 0.95 and 1.45 respectively. Figure 11 The value of the standard deviation of the size of the core axis pattern and its corresponding size can be obtained by the pattern measurement method described above.

[0098] The step S8 is performed: the size adjustment value of the mandrel pattern is determined according to the standard value (which can be the value of the maximum standard deviation of the size of the odd-numbered column) and the correlation graph, specifically, the size of the corresponding mandrel pattern is obtained in the correlation graph as the standard size according to the standard value, and the size of the corresponding mandrel pattern is obtained in the correlation graph as the reference size according to the standard deviation of the size of any even-numbered column, the minimum difference between the standard size and the reference size is obtained as the size adjustment value of the mandrel pattern, and then the process for forming the bar pattern is adjusted based on the size adjustment value, specifically, the size of the mandrel pattern is adjusted to achieve the adjustment of the pattern.

[0099] Please continue to refer to Figure 11 , assuming that the standard value is 0.49, the size of the corresponding mandrel pattern is about 47.1 and 48.6, i.e. the standard size is 47.1 and 48.6; the standard deviation of the size of any even-numbered column is about 1.3, the size of the corresponding mandrel pattern is obtained in the correlation graph as about 51.5, i.e. the reference size is 51.5, the minimum difference between the standard size and the reference size is obtained as the size adjustment value of the mandrel pattern, and the minimum difference between the standard size and the reference size is 2.9 here, which represents the size adjustment value of 2.9, and the size of the mandrel pattern is reduced by 2.9 according to the size adjustment value.

[0100] In this embodiment, the size of the pattern formed in each step can also be measured during the process of forming the bar pattern, and the pattern formed in each step can be adjusted as appropriate. Specifically, after the first side wall pattern is formed, the total size A1 of the mandrel pattern and the first side wall pattern on both sides of the mandrel pattern is measured (refer to Figure 3 ) and compared with the first preset value range, wherein the first preset value can be calculated, since the mandrel pattern is obtained by transforming the initial mandrel pattern, the size of the initial mandrel pattern can be calculated, the initial mandrel pattern can be set to 50 nm by the machine, and then the thickness of the side wall is set by the atomic layer chemical vapor deposition, assuming that the thickness is 10 nm, the first preset value should be 70 nm at this time, and then the first preset value range can fluctuate around 70 nm, the range of the specific set value can be set according to the needs of different processes, which is not limited here, for example, it can be 70±0.0003*70 nm. When the total size A1 of the mandrel pattern and the first side wall pattern on both sides of the mandrel pattern is not within the first preset value range, the first side wall pattern is adjusted; after the mandrel pattern is removed, the size A2 of the first side wall pattern is measured and compared with the second preset value range, at this time the size A2 of the first side wall pattern (refer to Figure 4) is the size of the sidewall by atomic layer chemical vapor deposition, which should be the aforementioned 10nm, and its range value can be 10nm±0.0003*10nm; when the size A2 of the first sidewall pattern is not within the second preset value range, the first sidewall pattern is adjusted. After forming the second sidewall pattern, the total size A3 of the second sidewall pattern of the transfer pattern and the two side walls of the transfer pattern is measured (reference Figure 6 ) and compared with the third preset value range, when the total size A3 of the transfer pattern and the second side wall pattern on both sides of the transfer pattern is not within the third preset value range, the second side wall pattern is adjusted; after removing the transfer pattern, the size A4 of the second side wall pattern is measured (reference Figure 7 ) and compared with the fourth preset value range. When the size A4 of the second side wall graphic is not within the fourth preset value range, the second side wall graphic is adjusted. The third preset value range and the fourth preset value range can refer to the value selection method of the first preset value, which will not be repeated here.

[0101] Example 2

[0102] This embodiment provides a pattern measurement method, including:

[0103] Step S1: providing a substrate, the substrate including a plurality of sub-regions;

[0104] Step S2: forming a plurality of spaced stripe patterns on the sub-areas by a multiple exposure process, with the stripe patterns serving as odd-numbered columns and the spacing patterns between adjacent stripe patterns serving as even-numbered columns;

[0105] Step S3: Calculate the standard deviation of the sizes of the odd columns and the standard deviation of the sizes of the even columns;

[0106] Step S4: providing a standard value;

[0107] Step S5: Compare the standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns with the standard value.

[0108] Figures 12 to 15 This is a schematic cross-sectional view of each step of forming a stripe pattern in a pattern measurement method provided in this embodiment. Figures 12 to 15 A pattern measurement method provided in this embodiment is described in detail.

[0109] Execute step S1: provide a substrate, the substrate includes multiple sub-regions, the process dimensions in each sub-region can be the same or different, the dimensions of the core shaft patterns subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0110] Executing step S2: forming a plurality of spaced stripe patterns on the sub-regions through a multiple exposure process. Specifically, the multiple exposure process includes the following steps:

[0111] Please refer to Figure 12 , a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbide nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating 80 and an initial mandrel pattern 90 are sequentially formed on the substrate 10 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel pattern 90 is a photolithography pattern, and the size of the initial mandrel pattern 90 is S( Figure 2 ), can be understood as Figure 2 The diagram illustrates a subregion, where the mandrel patterns in each subregion may have the same or different sizes. Silicon oxide layer 20, amorphous silicon layer 30, silicon nitride layer 40, first Advanced Patterning Film (APF) layer 51, silicon carbide nitride layer 60, second APF layer 52, and silicon oxynitride layer 70 are all mask layers, which can be modified based on different process requirements and are not limited here. The use of anti-reflective coating 80 can be determined based on the application scenario and is not limited here.

[0112] Please refer to Figure 13 , the pattern is transferred according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, the sidewall patterns 100 are formed on both sides of the mandrel pattern. The sidewall patterns 100 are also located on the top of the mandrel pattern and part of the surface of the silicon carbide nitride layer 60. The sidewall patterns 100 are formed by atomic layer chemical vapor deposition because the pattern formed by atomic layer chemical vapor deposition has a small degree of variation. Please refer to Figure 14 , remove the second APF layer 52 and the silicon oxynitride layer 70 (mandrel pattern) and part of the sidewall pattern 100, and retain the sidewall pattern 100 on both sides of the mandrel pattern.

[0113] Please refer to Figure 15 , a pattern transfer is performed based on the sidewall pattern 100, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form a stripe pattern 40a, and the stripe pattern 40a is used as the odd column 210, and the spacing pattern between adjacent stripe patterns 40a is used as the even column 220, and the odd column 210 and the even column 220 are arranged alternately; the sidewall pattern 100 is removed during the pattern transfer process.

[0114] Figure 16 This is a cross-sectional comparison diagram of a stripe pattern formed in a pattern measurement method provided in this embodiment. Figure 16 , Figure 16The diagram of the cross section of the strip pattern 40a is shown in FIG. 4 , and the cross section diagrams are arranged vertically from top to bottom in the order of preparation. The dotted lines are used to align the patterns in the cross sections to reflect the differences before and after the pattern transfer. Figure 16 It can be seen that the odd columns 210 are in the vertical direction ( Figure 16 In the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are etched using the initial mandrel pattern 90 as a mask to perform pattern transfer. The initial mandrel pattern 90 will be removed by etching during the transfer process. Etching generally uses an etching gas or an etching solution. It is difficult to control the etching accuracy of the etching gas or the etching solution, which will cause the mandrel pattern formed after the transfer to have dimensional deviations. The sidewall pattern 100 is formed by atomic layer chemical vapor deposition. Atomic layer chemical vapor deposition can accurately control the thickness of the sidewall pattern 100. By controlling the thickness of the sidewall pattern 100, the size of the odd-numbered columns 210 can be accurately controlled. Therefore, the standard deviation of the size of the odd-numbered columns 210 will be smaller.

[0115] Please continue to refer to Figure 15 , execute step S3: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size at different positions on the odd column 210 and then calculating the average value. The size d2 of each even column 220 can be obtained by measuring the size at different positions on the even column 220 and then calculating the average value. Then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained based on the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained based on the size d2 of the several even columns 220.

[0116] Execute step S4: provide a standard value. In this embodiment, the standard value is used to measure whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements. Since the standard deviation of the size of the odd columns is smaller and more in line with the process requirements, the value of the maximum standard deviation of the odd columns is preferably used as the standard value. The standard value can also be set.

[0117] Execute step S5: compare the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns with the standard value, so as to know whether the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns meet the process requirements, and evaluate the size deviation of the odd columns and the size deviation of the even columns, thereby realizing pattern measurement.

[0118] This embodiment further provides a pattern adjustment method, including:

[0119] Step S1: providing a substrate, the substrate comprising a plurality of sub-regions;

[0120] Step S2: forming a plurality of mandrel patterns arranged at intervals from each other on the sub-regions, and a plurality of sidewall patterns arranged on both sides of the mandrel patterns;

[0121] Step S3: removing the mandrel patterns;

[0122] Step S4: forming a plurality of strip patterns arranged at intervals on the sub-regions, taking the strip patterns as odd-numbered columns, and taking the spacing patterns between adjacent strip patterns as even-numbered columns, the odd-numbered columns being aligned with the sidewall patterns in a vertical direction;

[0123] Step S5: removing the sidewall patterns;

[0124] Step S6: calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns;

[0125] Step S7: taking a value of any one of the standard deviations of the sizes of the odd-numbered columns as a standard value, and establishing a correlation map according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered column of each sub-region;

[0126] Step S8: determining a size adjustment value of the mandrel pattern according to the standard value and the correlation map, and adjusting a process for forming the strip patterns based on the size adjustment value.

[0127] The following will be combined with Figures 12 to 15 A pattern adjustment method provided by the embodiment will be described in detail.

[0128] Step S1 is performed: a substrate is provided, the substrate comprising a plurality of sub-regions, the process size in each sub-region can be the same or different, that is, the size of the mandrel pattern subsequently formed in each sub-region can be the same or different, and the number of sub-regions is preferably greater than or equal to 3.

[0129] Step S2 is performed: a plurality of mandrel patterns arranged at intervals from each other are formed on the sub-regions, and a plurality of sidewall patterns are arranged on both sides of the mandrel patterns. The steps of forming the mandrel patterns and the sidewall patterns include:

[0130] Please continue to refer to Figure 12 , the substrate 10 is sequentially formed with a silicon oxide layer 20, an amorphous silicon layer 30, a silicon nitride layer 40, a first APF (Advanced Patterning Film) layer 51, a silicon carbon nitride layer 60, a second APF layer 52, a silicon oxynitride layer 70, an anti-reflective coating layer 80 and initial mandrel patterns 90 from bottom to top, wherein the initial mandrel patterns 90 are arranged at intervals from each other, the initial mandrel patterns 90 are photolithography patterns, and the size of the initial mandrel patterns 90 is S Figure 2 The lateral dimension in Figure 2The diagram illustrates a subregion, with the mandrel patterns in each subregion having the same or different sizes. Silicon oxide layer 20, amorphous silicon layer 30, silicon nitride layer 40, first Advanced Patterning Film (APF) layer 51, silicon carbide nitride layer 60, second APF layer 52, and silicon oxynitride layer 70 are all mask layers, which can be modified based on different process requirements and are not limited here. The use of anti-reflective coating 80 can be determined based on the application scenario and is not limited here.

[0131] Please continue to refer to Figure 13 , a pattern transfer is performed according to the initial mandrel pattern 90, so that the pattern is transferred to the second APF layer 52 and the silicon oxynitride layer 70. After the pattern transfer, the second APF layer 52 and the silicon oxynitride layer 70 are the mandrel patterns; then, a sidewall pattern 100 is formed on both sides of the mandrel pattern. The sidewall pattern 100 is also located on the top of the mandrel pattern and part of the surface of the silicon carbide nitride layer 60. The sidewall pattern 100 is formed by atomic layer chemical vapor deposition because the pattern formed by atomic layer chemical vapor deposition has a smaller degree of variation.

[0132] Execute step S3: Please continue to refer to Figure 14 , remove the mandrel pattern (the second APF layer 52 and the silicon oxynitride layer 70) and the sidewall pattern 100, and retain the sidewall pattern 100 located on both sides of the mandrel pattern.

[0133] Execute step S4: form a plurality of stripe patterns arranged at intervals on the sub-region, the step of forming the stripe pattern includes: performing pattern transfer according to the sidewall pattern 100, so that the pattern is transferred to the amorphous silicon layer 30 and the silicon nitride layer 40 to form stripe patterns 40a, the stripe patterns 40a are used as odd columns 210, and the spacing patterns between adjacent stripe patterns 40a are used as even columns 220, and the odd columns 210 and the even columns 220 are arranged alternately. Please continue to refer to Figure 16 , the odd-numbered columns 210 are aligned with the sidewall patterns 100 in the vertical direction.

[0134] Executing step S5: the sidewall pattern is removed during the pattern transfer process.

[0135] Please continue to refer to Figure 15, execute step S6: calculate the standard deviation of the size of the odd columns 210 and the standard deviation of the size of the even columns 220. Specifically, first obtain the size d1 of several odd columns 210 and the size d2 of several even columns 220. The size d1 of each odd column 210 can be obtained by measuring the size at different positions on the odd column 210 and then calculating the average value. The size d2 of each even column 220 can be obtained by measuring the size at different positions on the even column 220 and then calculating the average value. Then, the standard deviation of the size of the odd columns 210 (the overall standard deviation of the several odd columns 210) is obtained based on the size d1 of the several odd columns 210, and the standard deviation of the size of the even columns 220 (the overall standard deviation of the several even columns 220) is obtained based on the size d2 of the several even columns 220.

[0136] Execute step S7: Use any standard deviation of the dimensions of the odd-numbered columns as the standard value. The standard value is used to measure whether the standard deviation of the dimensions of the odd-numbered columns and the standard deviation of the dimensions of the even-numbered columns meet the process requirements. Since the standard deviation of the dimensions of the odd-numbered columns is smaller and more in line with the process requirements, the value of the maximum standard deviation of the dimensions of the odd-numbered columns is preferably used as the standard value. Furthermore, a correlation graph is established based on the size of the mandrel pattern of each sub-region and the standard deviation of the dimensions of the odd-numbered columns of each sub-region. The different sizes of the mandrel patterns of each sub-region generally lead to different standard deviations of the dimensions of the odd-numbered columns of each sub-region, so it is necessary to establish a correlation graph between the two. In this embodiment, since the odd-numbered columns are aligned with the sidewall pattern in the vertical direction, the value of any standard deviation of the dimensions of the odd-numbered columns is selected as the standard value; however, in actual practice, the value of any standard deviation of the dimensions of the odd-numbered columns or even-numbered columns aligned with the sidewall pattern is selected as the standard value.

[0137] Execute step S8: determine the size adjustment value of the core shaft graphic according to the standard value (the value of the maximum standard deviation of the size of the odd column can be taken) and the correlation diagram. Specifically, obtain the size of the corresponding core shaft graphic in the correlation diagram according to the standard value as the standard size, and obtain the size of the corresponding core shaft graphic in the correlation diagram according to the standard deviation of the size of any even column as the reference size, obtain the minimum difference between the standard size and the reference size as the size adjustment value of the core shaft graphic, and then adjust the process for forming the strip pattern based on the size adjustment value, specifically adjust the size of the core shaft graphic to achieve pattern adjustment.

[0138] In this embodiment, during the process of forming the stripe pattern, the size of the pattern formed in each step can also be measured, and the pattern formed in each step can be appropriately adjusted. Specifically, after forming the sidewall pattern, the total size A1 of the sidewall pattern of the mandrel pattern and the two side walls of the mandrel pattern is measured (refer to Figure 13) and compared with the first preset value range, wherein the first preset value can be obtained by calculation. Since the core shaft pattern is converted from the initial core shaft pattern, it can be calculated with the initial core shaft pattern size. The initial core shaft pattern can be set to 50nm by the machine, and then the side wall is deposited by atomic layer chemical vapor deposition. At this time, the thickness of the side wall is set by the machine. Assuming the thickness is 10nm, it can be concluded that the first preset value should be 70nm. Then the first preset value range can fluctuate around 70nm according to the first preset value. The specific setting value range can be set according to the requirements of different processes and is not limited here. For example, it can be 70±0.0003*70nm. When the total size A1 of the side wall pattern of the core shaft pattern and the two side walls of the core shaft pattern is not within the first preset value range, the side wall pattern is adjusted; after removing the core shaft pattern, the size A2 of the side wall pattern is measured and compared with the second preset value range. At this time, the size A2 of the first side wall pattern (reference Figure 14 ) is the size of the sidewall deposited by atomic layer chemical vapor deposition, which should be the aforementioned 10nm, and its range value can be 10nm±0.0003*10nm; when the size A2 of the sidewall pattern is not within the second preset value range, the sidewall pattern is adjusted.

[0139] In summary, in a pattern measurement method provided by the present invention, a plurality of spaced-apart strip patterns are formed on a sub-area through a multiple exposure process, and then the spacing patterns between adjacent strip patterns in the sub-area are divided into odd columns and even columns with the strip patterns as intervals, or the strip patterns are used as odd columns, and the spacing patterns between adjacent strip patterns are used as even columns; then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and then the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are compared with the provided standard values, so that the size deviation of the odd columns and the even columns can be known, thereby realizing the measurement of the pattern.

[0140] In a pattern adjustment method provided by the present invention, core axis patterns arranged at intervals from each other and side wall patterns located on both sides of the core axis patterns are formed on the sub-area; further, a plurality of spaced stripe patterns are formed on the sub-area, and the spacing patterns between adjacent stripe patterns in the sub-area are divided into odd columns and even columns with the stripe patterns as intervals, or the stripe patterns are used as odd columns, and the spacing patterns between adjacent stripe patterns are used as even columns, and the odd columns are aligned with the side wall patterns in the vertical direction; the standard deviation of the size of the odd columns and the standard deviation of the size of the even columns are calculated, and the value of any standard deviation of the size of the odd columns is used as the standard value, and a correlation graph is established according to the size of the core axis pattern of each sub-area and the standard deviation of the size of the odd columns of each sub-area; the size adjustment value of the core axis pattern is determined according to the standard value and the correlation graph, and the process for forming the stripe pattern is adjusted based on the size adjustment value, and the process for forming the stripe pattern is adjusted, thereby achieving pattern adjustment.

[0141] The above description is merely a preferred embodiment of the present invention and does not limit the present invention in any way. Any person skilled in the art who, without departing from the scope of the present invention, makes any equivalent substitution, modification, or other changes to the technical solution and technical content disclosed in the present invention shall be deemed to be within the scope of the present invention and still fall within the scope of protection of the present invention.

Claims

1. A method for measuring a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming a plurality of spaced-apart stripe patterns on the sub-region by a multiple exposure process, and dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals; Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns; Provide a standard value; The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

2. The method for measuring a pattern according to claim 1, wherein: The multiple exposure process includes: Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

3. The method for measuring a pattern according to claim 2, wherein: The sidewall pattern is formed by atomic layer chemical vapor deposition.

4. A method for measuring a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming a plurality of spaced stripe patterns on the sub-areas by a multiple exposure process, with the stripe patterns serving as odd-numbered columns and spacing patterns between adjacent stripe patterns serving as even-numbered columns; Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns; Provide a standard value; The standard deviation of the sizes of the odd-numbered columns and the standard deviation of the sizes of the even-numbered columns are compared with the standard value.

5. The method for measuring a pattern according to claim 4, wherein: The multiple exposure process includes: Mandrel patterns arranged at intervals from each other and sidewall patterns located on both sides of the mandrel patterns are formed on the substrate, and the odd-numbered columns are aligned with the sidewall patterns in a vertical direction.

6. The method for measuring a pattern according to claim 5, wherein: The sidewall pattern is formed by atomic layer chemical vapor deposition.

7. A method for adjusting a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming core shaft patterns spaced apart from each other and sidewall patterns on both sides of the core shaft patterns on the sub-region; removing the mandrel pattern; forming a plurality of stripe patterns arranged at intervals on the sub-region, dividing the spacing pattern between adjacent stripe patterns in the sub-region into odd columns and even columns with the stripe patterns as intervals, wherein the odd columns are aligned with the sidewall pattern in a vertical direction; removing the sidewall graphics; Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns; Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation graph according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region; A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

8. The pattern adjustment method according to claim 7, characterized in that: The maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

9. The pattern adjustment method according to claim 7, characterized in that: The sidewall pattern is formed by atomic layer chemical vapor deposition.

10. The method for adjusting a pattern according to claim 7, wherein: The side wall graphics located on both sides of the core shaft graphic are used as the first side wall graphics. After the first side wall graphics are formed, the total size of the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is measured and compared with the first preset value range. When the total size of the core shaft graphic and the first side wall graphics on both sides of the core shaft graphic is not within the first preset value range, the first side wall graphics is adjusted; after removing the core shaft graphic, the size of the first side wall graphics is measured and compared with the second preset value range. When the size of the first side wall graphics is not within the second preset value range, the first side wall graphics is adjusted.

11. The method for adjusting a pattern according to claim 10, wherein: Forming a plurality of spaced-apart strip patterns on the sub-area includes: performing a pattern transfer according to the first sidewall pattern to form a second sidewall pattern located on both side walls of the transfer pattern, and removing the transfer pattern; after forming the second sidewall pattern, measuring the total size of the transfer pattern and the second sidewall pattern on both side walls of the transfer pattern and comparing it with a third preset value range; when the total size of the transfer pattern and the second sidewall pattern on both side walls of the transfer pattern is not within the third preset value range, adjusting the second sidewall pattern; after removing the transfer pattern, measuring the size of the second sidewall pattern and comparing it with a fourth preset value range; when the size of the second sidewall pattern is not within the fourth preset value range, adjusting the second sidewall pattern.

12. A method for adjusting a pattern, characterized in that: include: providing a substrate, the substrate comprising a plurality of sub-regions; forming core shaft patterns spaced apart from each other and sidewall patterns on both sides of the core shaft patterns on the sub-region; removing the mandrel pattern; forming a plurality of stripe patterns arranged at intervals on the sub-region, with the stripe patterns serving as odd-numbered columns and spacing patterns between adjacent stripe patterns serving as even-numbered columns, wherein the odd-numbered columns are aligned with the sidewall patterns in a vertical direction; removing the sidewall graphics; Calculating a standard deviation of the sizes of the odd-numbered columns and a standard deviation of the sizes of the even-numbered columns; Taking any standard deviation of the size of the odd-numbered columns as a standard value, and establishing a correlation graph according to the size of the mandrel pattern of each sub-region and the standard deviation of the size of the odd-numbered columns of each sub-region; A size adjustment value of the mandrel pattern is determined according to the standard value and the correlation graph, and a process for forming the stripe pattern is adjusted based on the size adjustment value.

13. The pattern adjustment method according to claim 12, characterized in that: The maximum standard deviation of the sizes of the odd-numbered columns is used as the standard value.

14. The method for adjusting a pattern according to claim 12, wherein: The sidewall pattern is formed by atomic layer chemical vapor deposition.

15. The method for adjusting a pattern according to claim 12, wherein: After forming the sidewall pattern, the total size of the core shaft pattern and the sidewall patterns on both sides of the core shaft pattern is measured and compared with a first preset value range. When the total size of the core shaft pattern and the sidewall patterns on both sides of the core shaft pattern is not within the first preset value range, the sidewall pattern is adjusted. After removing the core shaft pattern, the size of the sidewall pattern is measured and compared with a second preset value range. When the size of the sidewall pattern is not within the second preset value range, the sidewall pattern is adjusted.

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