Gas deflector, reflow solder tool and method of operation thereof

Abstract

A segment heater assembly of a reflow solder tool includes a gas deflector having a single layer structure. The single-layer structure may include one or more gas permeable patterns through which the process gas will flow from one or more gas outlets to the vent of the section heater assembly. One or more gas permeation patterns in the single layer structure promote uniformity of gas flow through the vent and into the heating section of the reflow solder tool. The uniformity of the flow of the process gas enables convective heat provided by the process gas to be uniformly distributed across the heating section. In this manner, the gas directors described herein may reduce hot spots and / or cold spots in the heating section, which enables greater flexibility when placing a semiconductor package substrate on a conveyor belt device of a reflow solder tool. The embodiment of the invention also relates to a gas deflector, a reflow solder tool and a method for operating the same.

Description

Technical Field

[0001] Embodiments of the present application relate to gas deflectors, solder reflow tools, and methods of operating the same. Background Art

[0002] A reflow soldering tool is a semiconductor processing tool used in the semiconductor industry. The reflow soldering tool can be used to solder components such as semiconductor dies and / or semiconductor die packages to a semiconductor package substrate to form a semiconductor device package. The semiconductor package substrate and the components placed on the semiconductor package substrate are positioned on a conveyor device that moves the semiconductor package substrate through a plurality of heating sections of the reflow soldering tool. Each heating section is configured to provide convective heat to the semiconductor package substrate at a specific temperature, so that a temperature distribution for a reflow soldering operation of the semiconductor package substrate can be achieved. The reflow soldering operation is performed to reflow the solder paste between the semiconductor package substrate and the components on the semiconductor package substrate, which forms a solder joint that joins the components to the semiconductor package substrate to form a semiconductor device package. Summary of the invention

[0003] Some embodiments of the present application provide a gas deflector for use in a solder reflow tool, the gas deflector comprising: a single-layer board; and a gas permeation pattern located in the single-layer board, wherein the gas permeation pattern comprises: a plurality of holes spaced apart from each other; and a plurality of grooves spaced apart from each other.

[0004] Other embodiments of the present application provide a solder reflow tool, comprising: a conveyor device configured to provide a semiconductor package substrate to a heating section; and a section heater assembly configured to provide a process gas to the heating section, wherein the section heater assembly comprises: one or more gas outlets; an exhaust port; and a single-layer gas deflector located between the exhaust port and the one or more gas outlets.

[0005] Still other embodiments of the present application provide a method comprising: providing a plurality of semiconductor package substrates onto a conveyor device of a reflow solder tool; providing the plurality of semiconductor package substrates to a heating section of the reflow solder tool using the conveyor device; and joining one or more semiconductor components to each of the plurality of semiconductor package substrates using a process gas provided to the heating section, wherein the process gas is provided to the heating section using a section heater assembly comprising a single-layer gas deflector. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] When read in conjunction with the accompanying drawings, various aspects of the disclosed embodiments can be best understood from the following detailed description. It should be noted that, in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, for clarity of discussion, the size of the various components may be arbitrarily increased or reduced.

[0007] Figure 1A and Figure 1B is a diagram of an exemplary semiconductor processing tool described herein.

[0008] Figure 2A and Figure 2B This article describes the use of Figure 1A and Figure 1B FIG. 1 is a diagram of an exemplary gas deflector for use in a semiconductor processing tool.

[0009] FIG. 3A to FIG. 3D is a diagram of an exemplary embodiment of a solder reflow operation described herein.

[0010] Figure 4 This article describes the use of Figure 1A and Figure 1B FIG. 1 is a diagram of an exemplary gas deflector for use in a semiconductor processing tool.

[0011] Figure 5 is a diagram of exemplary components of one or more devices described herein.

[0012] Figure 6 is a flow chart of an exemplary process associated with the solder reflow operations described herein. DETAILED DESCRIPTION

[0013] The following disclosure provides many different embodiments or examples for realizing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the disclosed embodiments. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component above or on a second component may include an embodiment in which the first component and the second component are directly contacted, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not be in direct contact. In addition, the disclosed embodiments may repeat reference numerals and / or characters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0014] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another (or additional) elements or components as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly.

[0015] Convection heat in a heating zone of a reflow solder tool may be provided in the form of a process gas generated by a zone heater assembly associated with the heating zone. The zone heater assembly is used to generate the process gas by heating one or more inlet gases. The zone heater assembly is used to provide the process gas onto the semiconductor package substrate by using a blower fan to blow the process gas through ducts in the zone heater assembly as the semiconductor package substrate passes through the heating zone.

[0016] The uniformity of the gas flow of the process gas and / or the temperature uniformity of the heating zone are some of the parameters that directly affect the output of the reflow soldering tool and / or the quality of the solder joints of the components joined to the semiconductor package substrate. The gas flow variation of the process gas may cause hot spots and / or cold spots in the heating zone, causing the limited placement of the semiconductor package substrate on the conveyor device. The limited placement of the semiconductor package substrate on the conveyor device means that fewer semiconductor package substrates can be processed than if the larger area of ​​the conveyor device can be utilized. This causes a reduced unit output per hour (UPH) for the reflow soldering tool. Additionally and / or optionally, the temperature variation in the heating zone (e.g., the temperature variation of the zone across the heating zone and / or the temperature variation of the process gas) may result in insufficient convection heat being supplied and the solder paste cannot be fully reflowed. Insufficient convection heat may cause the reduced quality (e.g., reduced solder strength, reduced solder coverage) of the solder joints of the components joined to the semiconductor package substrate, which may increase the possibility of solder joint failure. This may cause an increased failure rate of bonds between components on the semiconductor package substrate, which may reduce the yield of semiconductor device packages produced by the solder reflow tool.

[0017] In some embodiments described herein, the zone heater assembly of the reflow soldering tool includes a gas deflector having a single-layer structure. The single-layer structure may include one or more gas permeation patterns, through which the process gas will flow from one or more gas outlets to the exhaust port of the zone heater assembly. The one or more gas permeation patterns in the single-layer structure promote the uniformity of the airflow through the exhaust port and into the heating zone of the reflow soldering tool. The uniformity of the airflow of the process gas enables the convective heat provided by the process gas to be evenly distributed across the heating zone. In this way, the gas deflector described herein can reduce hot spots and / or cold spots in the heating zone, which enables greater flexibility when placing the semiconductor package substrate on the conveyor device of the reflow soldering tool. This enables the use of a reflow soldering tool to process semiconductor package substrates at a greater number and / or rate than without a gas deflector, which increases the productivity (e.g., UPH) of the reflow soldering tool. In addition, the increased temperature uniformity in the heating section increases the likelihood that sufficient convective heat will be provided to the semiconductor package substrate on the conveyor device to form a high quality solder joint between the semiconductor package substrate and the components bonded to the semiconductor package substrate. This reduces the likelihood that the solder joint will fail, which may cause a reduced failure rate of the bond between the components on the semiconductor package substrate, and / or may increase the yield of semiconductor device packages produced by the reflow solder tool.

[0018] Figure 1A and Figure 1B is a diagram of an exemplary semiconductor processing tool described herein. The semiconductor processing tool includes a reflow solder tool and / or another type of semiconductor processing tool for soldering components such as semiconductor dies and / or semiconductor die packages to a semiconductor package substrate to form a semiconductor device package.

[0019] Figure 1A 1 shows a top view of a semiconductor processing tool 100. Figure 1AAs shown in , the semiconductor processing tool 100 is used to process a semiconductor device package 102. The semiconductor device package 102 includes a semiconductor package substrate 104 and one or more semiconductor components 106 to be attached to the semiconductor package substrate. In some embodiments, the semiconductor component 106 includes a logic die, such as a central processing unit (CPU) die, a mobile application processor die, an application-specific integrated circuit (ASIC) die, a graphics processing unit (GPU) die, a field programmable gate array (FPGA) die, and / or a microcontroller die, among other examples. In some embodiments, the semiconductor component 106 includes a memory die, such as a dynamic random access memory (DRAM) die, a NAND die, a static random access memory (SRAM) die, and / or a high bandwidth memory (HBM) die, among other examples. In some embodiments, the semiconductor component 106 includes a high data rate transceiver die, an I / O interface die, an image sensor die, an integrated passive device (IPD) die, and / or a radio frequency (RF) die, among other examples.

[0020] In some embodiments, the semiconductor component 106 of the semiconductor device package 102 is a chiplet, which is a semiconductor die that includes a specific subset of the functions of the semiconductor device package 102. For example, an RF front-end device may include multiple chiplets packaged on a semiconductor package substrate. The chiplets may correspond to power amplifier dies, filter dies, RF switch dies, antenna switch dies, and / or antenna adjuster dies, among other examples. As another example, a CPU device may include multiple processor core chiplets, multiple HBM chiplets, and one or more I / O interface chiplets. Implementing chiplets on the semiconductor package substrate 104 (e.g., rather than a monolithic die that includes a full set of functions) enables advancements in specific functions without necessarily redesigning semiconductor dies for other functions.

[0021] The semiconductor components 106 of the semiconductor device package 102 may be electrically connected through a redistribution layer 110 in the semiconductor package substrate 104, and / or may be stacked in a system on integrated chip (SoIC) manner, so that two or more semiconductor components 106 are directly bonded and interconnected. The semiconductor components 106 may be positioned on solder pads 108 on the semiconductor package substrate 104. The solder pads 108 include a reflowable solder paste that secures the semiconductor components 106 to the semiconductor package substrate 104 when processed by the semiconductor processing tool 100.

[0022] like Figure 1AAs further shown in FIG. 1 , the semiconductor processing tool 100 includes a load port 112 in which the semiconductor device package 102 is temporarily stored before processing. The semiconductor device package 102 can be transferred to the load port 112 by a transport tool, such as a mobile robot, a robot arm, a tram or rail car, an overhead lift transport (OHT) system, an automatic material handling system (AMHS), and / or another type of device configured to transport the semiconductor device package 102. In some embodiments, the semiconductor component 106 can be placed onto the semiconductor package substrate 104 of the semiconductor device package 102 in the load port 112. For example, a pick and place tool can place the semiconductor component 106 onto the semiconductor package substrate 104 of the semiconductor device package 102 in the load port 112. Additionally and / or alternatively, the pick and place tool can place the semiconductor component 106 onto the semiconductor package substrate 104 of the semiconductor device package 102 before the semiconductor device package 102 is loaded into the load port 112.

[0023] like Figure 1A As further shown in FIG. 1 , the semiconductor processing tool 100 includes a conveyor device 114 and a buffer section 116 between the load port 112 and the conveyor device 114. The conveyor device 114 includes a conveyor belt, a movable platform, a tray system including a plurality of connecting plates, and / or another type of device configured to move semiconductor device packages 102 through a plurality of heating sections 118 a-118 n. The semiconductor device packages 102 on the conveyor device 114 are exposed to heat as the conveyor device 114 moves the semiconductor device packages 102 through the heating sections 118 a-118 n.

[0024] Convective heat is provided to the semiconductor device package 102 in each of the heating sections 118a-118n at a specific temperature, so that a temperature profile for a reflow soldering operation of the semiconductor device package 102 can be achieved. For example, convection heat can be provided to the semiconductor device package 102 in the heating sections 118a-118n at increasing temperatures in a traveling direction 120 (e.g., in the x-direction) of the semiconductor device package 102 on the conveyor device 114. Thus, convection heat can be provided to the semiconductor device package 102 at a first temperature in the heating section 118a, convection heat can be provided to the semiconductor device package 102 at a second temperature greater than the first temperature in the heating section 118b, convection heat can be provided to the semiconductor device package 102 at a third temperature greater than the second temperature in the heating section 118c, and so on.

[0025] As another example, the temperature of the convective heat can be maintained across two or more of the heating zones 118a-118n.As another example, the temperature of the convective heat provided in a heating zone can be less than the temperature of the convective heat provided in a previous heating zone.

[0026] A solder reflow operation is performed to reflow solder paste between the semiconductor package substrate 104 and the solder pads 108 of the semiconductor component 106 on the semiconductor package substrate 104. Reflowing the solder paste removes flux from the solder paste, leaving solder that forms solder joints that join the semiconductor component 106 to the semiconductor package substrate 104 of the semiconductor device package 102.

[0027] Once the semiconductor device package 102 is processed by the heating sections 118a-118n, the semiconductor device package 102 is provided to an unloading port 122 of the semiconductor processing tool 100 through another buffer section 124 of the semiconductor processing tool 100. A transport vehicle may transfer the semiconductor device package 102 from the unloading port 122 to another semiconductor processing tool, to a storage location in a semiconductor processing facility, and / or to packaging for transport to another facility, among other examples.

[0028] Figure 1B A perspective view of a portion of a semiconductor processing tool 100 is shown. Figure 1B As shown in , the semiconductor processing tool 100 includes a plurality of zone heater assemblies 126a-126n. Each zone heater assembly 126a-126n is configured to provide convective heat to a corresponding heating zone 118a-118n. For example, the zone heater assembly 126a can be configured to provide convective heat to the heating zone 118a, the zone heater assembly 126b can be configured to provide convective heat to the heating zone 118b, and so on. The zone heater assemblies 126a-126n can be located above the conveyor device 114 and spaced apart from the conveyor device 114 so that the semiconductor device packages 102 can travel along the conveyor device 114 below the zone heater assemblies 126a-126n.

[0029] like Figure 1BAs further shown in FIG. 1 , the semiconductor device packages 102 can be arranged in a plurality of columns 128a-128m and a plurality of rows 130a-130i on the conveyor device 114. The semiconductor device packages 102 can be placed on the conveyor device 114 in the plurality of columns 128a-128m (e.g., using a transport) such that a plurality of semiconductor device packages 102 in the same row are processed by the zone heater assembly at the same time. For example, as the row 130a of the semiconductor device packages 102 is moved through the zone heater assemblies 126a-126n using the conveyor device 114, the row 130a of the semiconductor device packages 102 can be processed by the zone heater assembly 126a at the same time, can be processed by the zone heater assembly 126b at the same time, and so on. This increases the throughput and UPH capability of the semiconductor processing tool 100 relative to processing only a single semiconductor device package 102 at a time.

[0030] Figure 1B A detailed view of heater assembly 126a is also shown. The other heater assemblies of zone heater assemblies 126a-126n may have similar component configurations. Figure 1B As shown in , the zone heater assembly 126a includes a processing chamber 132 and multiple components in the processing chamber 132. The processing chamber 132 includes one or more inert gas inlets 134a and one or more ambient gas inlets 134b. An inert gas (such as nitrogen (N2) or argon (Ar), among other examples) can be provided to the processing chamber 132 through the one or more inert gas inlets 134a. Ambient gas (e.g., ambient air) from the surroundings of the semiconductor processing tool can be provided to the processing chamber 132 through heater devices 136, each of which includes a plurality of heating elements 138. When the ambient gas passes through the heater devices 136 from the ambient gas inlet 134b to the mixing chamber 140 within the processing chamber 132, the heating elements 138 in the heater devices 136 can heat the ambient gas (e.g., can increase the temperature of the ambient gas). The heating elements 138 can include resistive heating elements and / or another type of conductive heating elements, among other examples.

[0031] The heated ambient gas and the inert gas are mixed in the mixing chamber 140 to form the process gas. One or more gas deflector shelves 142a and / or 142b are included in the mixing chamber 140 to promote the mixing of the heated ambient gas and the inert gas and to direct the process gas upward into the gas blower device 144. The single-sided gas deflector shelves 142a may be located at opposite ends of the mixing chamber 140 and may be positioned to promote the flow of gas in the mixing chamber 140 toward the center of the mixing chamber 140 where the double-sided gas deflector shelves 142b are located. The double-sided gas deflector shelves 142b may be positioned to promote the flow of process gas upward into the gas blower device 144.

[0032] The gas blower device 144 includes a chamber and a fan configured to generate a negative pressure in the mixing chamber 140. The negative pressure promotes the process gas to flow upward into the chamber of the gas blower device 144. The fan is also configured to direct the process gas into one or more gas outlets 146, which may include a conduit (e.g., a steel pipe, a tube, a duct) shaped to direct the process gas to flow downward through a partition plate 148, which separates the mixing chamber 140 from an exhaust port 150 of the processing chamber 132. The process gas flows from the one or more gas outlets 146 and flows through a gas deflector 152 to the exhaust port 150. The process gas flows through the exhaust port 150 and flows onto the semiconductor device package 102 passing under the zone heater assembly 126a, which reflows the solder paste on the solder pads 108 of the semiconductor device package 102 and bonds the semiconductor component 106 to the semiconductor package substrate 104 of the semiconductor device package 102.

[0033] Gas deflectors 152 are included between one or more gas outlets 146 and exhaust ports 150 (and between gas deflector racks 142a / 142b and exhaust ports 150) to evenly distribute the flow of process gas across the heating zone associated with the zone heater assembly 126a. Thus, the gas deflectors 152 promote even distribution of heat and gas flow rate of the process gas across the heating zone associated with the zone heater assembly 126a, which enables multiple rows 130a-130i of semiconductor device packages 102 to be processed simultaneously through the heating zone associated with the zone heater assembly 126a, rather than processing a single semiconductor device package 102 at a time.

[0034] The semiconductor processing tool 100 may also include a controller 154. The controller 154 may be configured to provide signals to the load port 112, the conveyor device 114, the zone heater assemblies 126a-126n, the unloading port 122, one or more transports associated with the semiconductor processing tool 100, and / or another device associated with or included in the semiconductor processing tool 100 and / or receive signals from the load port 112, the conveyor device 114, the zone heater assemblies 126a-126n, the unloading port 122, one or more transports associated with the semiconductor processing tool 100, and / or another device associated with or included in the semiconductor processing tool 100. The signals may include electrical signals (e.g., current, voltage, radio frequency (RF) signals, digital signals, analog signals, digital communications), optical signals (e.g., optical communications signals), and / or another type of electromagnetic signal. The controller 154 may include a processor, a microprocessor, a CPU, a microcontroller, and / or another type of processor implemented in hardware, firmware, or a combination of hardware and software. In some implementations, the controller 154 may include one or more processors that can be programmed to perform one or more operations or processes described elsewhere herein.

[0035] As shown above, provide Figure 1A and Figure 1B As an example. Other examples can be related to Figure 1A and Figure 1B The content described is different.

[0036] Figure 2A and Figure 2B This article describes the use of Figure 1A and Figure 1B FIG. 2 is a diagram of an example 200 of a gas deflector 152 for use in a semiconductor processing tool 100. Figure 2A As shown in FIG. 1 , the gas deflector 152 includes a single-layer plate 202 extending in the xy plane of the gas deflector 152. The single-layer plate 202 includes a side 202a extending in the y direction and an end 202b extending in the x direction.

[0037] The single layer plate 202 includes a single layer of material (e.g., aluminum, steel, titanium) that is capable of withstanding degradation from excessive repeated exposure to heat from process gases generated by the zone heater assemblies 126a-126n including the gas deflectors 152 therein. The single layer of the single layer plate 202 is substantially flat and does not extend in the z-direction. The flat single layer plate 202 enables the process to be evenly and uniformly distributed across the xy plane because the single layer plate 202 has no z-direction protrusions that might otherwise interfere with the distribution of the process gas across the xy plane of the gas deflectors 152. The single layer plate 202 may have an approximately rectangular shape in a top view of the gas deflectors 152 (e.g., in the xy plane). In some embodiments, the gas deflectors 152 include notches in the corners of the single layer plate 202.

[0038] like Figure 2A As further shown in FIG. 1 , the single-layer plate 202 of the gas deflector 152 includes one or more gas permeation patterns, including gas permeation pattern 204a and / or gas permeation pattern 204b. The gas permeation pattern 204a and / or 204b enables the process gas of the associated zone heater assembly 126 to flow from one or more gas outlets 146 of the zone heater assembly 126 through the gas deflector 152 to the exhaust port 150 of the zone heater assembly 126. The gas permeation pattern 204a and / or 204b is configured to promote uniform distribution of gas flow rate and temperature of the process gas across the heating zone 118 associated with the zone heater assembly 126. One or more slots 206 may be included between the gas permeation patterns 204a and 204b in the single-layer plate 202. The one or more slots 206 may be located approximately at the center of the single-layer plate 202. The one or more slots 206 may be approximately rectangular in shape and may have approximately orthogonal or right-angled corners in a top view of the single-layer plate 202. The one or more slots 206 may extend completely between the sides 202a of the single-layer board 202 such that the ends of the one or more slots 206 are approximately orthogonal to the sides 202a of the single-layer board.

[0039] The gas deflector 152 also includes a plurality of L-shaped baffles 208 attached to the single-layer plate 202. The L-shaped baffles 208 are located at respective corners of the single-layer plate 202. The L-shaped baffles 208 are included to reduce, minimize and / or prevent leakage of the process gas around the gas permeation patterns 204a and / or 204b. Otherwise, such leakage may reduce the uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer plate 202.

[0040] The L-shaped blocking plate 208 includes a first segment 208a extending in the x-direction and a second segment 208b extending in the y-direction. The first segment 208a and the second segment 208b are approximately orthogonal and form an L-shaped structure. The L-shaped structure can be concave because the L-shaped structure extends into a notch in the corner of the single-layer plate 202 of the gas deflector 152. Optionally, one or more of the L-shaped blocking plates 208 can include a convex L-shaped structure that conforms to the corner of the single-layer plate 202, so that the single-layer plate 202 has no notch in the corner of the single-layer plate 202.

[0041] The first section 208a of the L-shaped blocking plate 208 may have a length (in the range of greater than 0 millimeters (mm) to about 27 mm). Figure 2A 152). If the length of the first section 208a is 0 mm, the first section 208a will not block leakage of process gas around the gas deflector 152. If the length of the first section 208a is greater than about 27 mm, the L-shaped blocking plate 208 may occupy too large an area and may not provide enough area for the gas permeation pattern 204a and / or 204b on the single-layer board 202. This may result in reduced uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. If the length of the first section 208a is included in the range of greater than 0 mm to about 27 mm, enough area for the gas permeation pattern 204a and / or 204b may be provided on the single-layer board 202 while enabling the L-shaped blocking plate 208 to adequately block leakage of process gas around the gas deflector 152. However, other values ​​for the length of the first section 208a and ranges other than greater than 0 mm to about 27 mm are also within the scope of the embodiments of the present disclosure.

[0042] The second section 208b of the L-shaped blocking plate 208 may have a length (in the range of greater than 0 mm to about 27 mm). Figure 2A152). If the length of the second section 208b is 0 mm, the second section 208b will not block leakage of process gas around the gas deflector 152. If the length of the second section 208b is greater than about 27 mm, the L-shaped blocking plate 208 may occupy too large an area and may not provide enough area for the gas permeation pattern 204a and / or 204b on the single-layer board 202. This may result in reduced uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. If the length of the second section 208b is included in the range of greater than 0 mm to about 27 mm, enough area for the gas permeation pattern 204a and / or 204b may be provided on the single-layer board 202 while enabling the L-shaped blocking plate 208 to adequately block leakage of process gas around the gas deflector 152. However, other values ​​for the length of the second section 208b and ranges other than greater than 0 mm to about 27 mm are also within the scope of the embodiments of the present disclosure.

[0043] The L-shaped baffle 208 also extends in the z-direction, which is approximately orthogonal to the xy plane in which the single-layer plate 202 of the gas deflector 152 is located. The L-shaped baffle 208 can extend from the single-layer plate 202 to a height in the z-direction (in Figure 2A The L-shaped blocking plate 208 has a z-direction height (indicated as dimension D3) included in the range of about 20 mm to about 65 mm. If the z-direction height of the L-shaped blocking plate 208 is less than about 20 mm, the L-shaped blocking plate 208 may not effectively block leakage of process gas above the L-shaped blocking plate 208. If the z-direction height of the L-shaped blocking plate 208 is greater than about 65 mm, the gas deflector 152 may not be installed in the segment heater assembly 126 between the partition plate 148 and the exhaust port 150 of the segment heater assembly 126. If the z-direction height of the L-shaped blocking plate 208 is included in the range of about 20 mm to about 65 mm, the L-shaped blocking plate 208 can sufficiently block leakage of process gas above the L-shaped blocking plate 208 while still enabling the gas deflector 152 to be installed in the segment heater assembly 126 between the partition plate 148 and the exhaust port 150 of the segment heater assembly 126. However, other values ​​and ranges other than about 20 mm to about 65 mm for the z-direction height of the L-shaped blocking plate 208 are also within the scope of the disclosed embodiments.

[0044] The width of the groove 206 between the gas permeation patterns 204a and 204b (in Figure 2AThe width of the slot 206 (indicated as dimension D4) may be included in the range of about 53 mm to about 64 mm to provide sufficient spacing between the gas permeation patterns 204a and 204b. If the width of the slot 206 is less than about 53 mm or greater than about 64 mm, the spacing between the gas permeation patterns 204a and 204b may cause reduced uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. If the width of the slot 206 is included in the range of about 53 mm to about 64 mm, the spacing between the gas permeation patterns 204a and 204b may promote uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. However, other values ​​for the width of the slot 206 and ranges other than about 53 mm to about 64 mm are also within the scope of the embodiments of the present disclosure.

[0045] Figure 2B A detailed view of a gas permeation pattern 204 (eg, gas permeation pattern 204a and / or 204b) included in a single layer plate 202 of a gas deflector 152 is shown. In some embodiments, the gas permeation pattern 204a includes Figure 2B The gas permeation pattern 204 shown in FIG. 2 and the gas permeation pattern 204b includes Figure 2B A mirrored version of the gas permeation pattern 204 shown in FIG.

[0046] like Figure 2B As shown in FIG. 1 , the gas permeation pattern 204 includes: a plurality of groups of holes 210, 212a-212d, 214a and 214b in the single layer plate 202 of the gas deflector 152. The gas permeation pattern 204 also includes slots 216a-216c extending in the x-direction. The gas permeation pattern 204 also includes slots 218a-218d.

[0047] The holes 210 may be grouped around the center of the gas permeation pattern 204 and may be spaced apart from each other. The hole 210 may have a circular shape. The holes 212a-212d may each be grouped around the first half of the hole 210 in a semicircular arrangement (e.g., in a semicircular arrangement). The hole 212a may be located adjacent to the first half of the hole 210, the hole 212b may be located adjacent to the hole 212a, the hole 212c may be located adjacent to the hole 212b, and the hole 212d may be located adjacent to the hole 212c. The holes 212a-212d may be arranged in increasing sizes so that the diameter of the hole 212b is larger than the diameter of the hole 212a, the diameter of the hole 212c is larger than the diameter of the hole 212b, and the diameter of the hole 212d is larger than the diameter of the hole 212c. In some embodiments, the diameter of the hole 210 is larger than the diameter of the hole 212c and smaller than the diameter of the hole 212d.

[0048] The holes 214a may be grouped at a first side 202a of the single-layer board 202, and the holes 214b may be grouped at a second side 202a of the single-layer board 202 opposite the first side. The holes 214a may extend along the first side 202a and along a portion of the slot 216b. The holes 214b may extend along the second side 202a and along another portion of the slot 216b. The holes 214a may be arranged in an asymmetrical pattern, such as Figure 2B The holes 214b may also be arranged in an asymmetrical manner, such as Figure 2B As shown in . Optionally, holes 214a and / or holes 214b can be arranged in a symmetrical pattern in the x-direction and / or in the y-direction. In some embodiments, the diameter of hole 214a is larger than the diameter of hole 212a and smaller than the diameter of hole 212b. In some embodiments, the diameter of hole 214b is larger than the diameter of hole 212a and smaller than the diameter of hole 212b. In some embodiments, the diameter of hole 214a and the diameter of hole 214b are approximately equal. In some embodiments, the diameter of hole 214a is larger than the diameter of hole 214b. In some embodiments, the diameter of hole 214a is smaller than the diameter of hole 214b.

[0049] The groove 216a may be located on a first side of the gas permeation pattern 204, and the grooves 216b and 216c may be located on a second side of the gas permeation pattern 204 opposite to the first side. The holes 210, 212a-212d, 214a and 214b and the grooves 218a-218d may be located between the groove 216a and the groove 216b. The groove 216a may extend between the L-shaped blocking plates 208 at the corners of the single-layer plate 202.

[0050] Grooves 216b and 216c may be located side by side in the gas permeation pattern 204. Grooves 216b and 216c may extend between sides 202a of the single layer sheet 202. Grooves 216c may be located next to groove 206. Grooves 216a-216c may each be approximately rectangular in shape and may each have approximately orthogonal or right angle corners in a top view of the single layer sheet 202.

[0051] The grooves 218a-218d may each have rounded ends (or rounded corners) and have a curved shape (e.g., an arc shape) in a top view of the single-layer plate 202. The grooves 218a-218d may each be grouped in a semicircular arrangement (e.g., in a semicircular arrangement) around a second half of the hole 210 opposite to the first half. The groove 218a may be located adjacent to the second half of the hole 210, the groove 218b may be located adjacent to the groove 218a, the groove 218c may be located adjacent to the groove 218b, and the groove 218d may be located adjacent to the groove 218c. The semicircular arrangement of the grooves 218a may be adjacent to the semicircular arrangement of the hole 212a. The semicircular arrangement of the grooves 218b may be adjacent to the semicircular arrangement of the hole 212b. The semicircular arrangement of the grooves 218c may be adjacent to the semicircular arrangement of the hole 212c. The semicircular arrangement of the grooves 218d may be adjacent to the semicircular arrangement of the hole 212d.

[0052] The grooves 218a-218d can be arranged in increasing sizes so that the width of groove 218b is greater than the width of groove 218a, the width of groove 218c is greater than the width of groove 218b, and the width of groove 218d is greater than the width of groove 218c. In some embodiments, the width of groove 216a is greater than the width of groove 218b and less than the width of groove 218c. In some embodiments, the width of groove 216b is greater than the width of groove 218c and less than the width of groove 218d. In some embodiments, the width of groove 216c is greater than the width of groove 218d and less than the width of one or more grooves 206.

[0053] The width of the groove 216a (in Figure 2B The width of the groove 216a (denoted as dimension D5) may be included in the range of about 5.5 mm to about 6.6 mm to provide sufficient flow of process gas through the single-layer plate 202. If the width of the groove 216a is less than about 5.5 mm or greater than about 6.6 mm, the flow of process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 216a is included in the range of about 5.5 mm to about 6.6 mm, the flow of process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 216a and ranges other than about 5.5 mm to about 6.6 mm are also within the scope of the embodiments of the present disclosure.

[0054] The width of the groove 216b (in Figure 2BThe width of the groove 216 b (denoted as dimension D6 in FIG. 1 ) may be included in the range of about 6.7 mm to about 8.1 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the groove 216 b is less than about 6.7 mm or greater than about 8.1 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 216 b is included in the range of about 6.7 mm to about 8.1 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 216 b and ranges other than about 6.7 mm to about 8.1 mm are also within the scope of the embodiments of the present disclosure.

[0055] The width of the groove 216c (in Figure 2B The width of the slot 216 c (denoted as dimension D7) may be included in the range of about 44 mm to about 53 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the slot 216 c is less than about 44 mm or greater than about 53 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the slot 216 c is included in the range of about 4 mm to about 53 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the slot 216 c and ranges other than about 44 mm to about 53 mm are also within the scope of the embodiments of the present disclosure.

[0056] The width of the groove 218a (in Figure 2B The width of the groove 218a (denoted as dimension D8) may be included in the range of about 2.9 mm to about 3.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the groove 218a is less than about 2.9 mm or greater than about 3.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 218a is included in the range of about 2.9 mm to about 3.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 218a and ranges other than about 2.9 mm to about 3.6 mm are also within the scope of the embodiments of the present disclosure.

[0057] The width of the groove 218b (in Figure 2BThe width of the groove 218b (denoted as dimension D9) may be included in the range of about 4.6 mm to about 5.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the groove 218b is less than about 4.6 mm or greater than about 5.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 218b is included in the range of about 4.6 mm to about 5.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 218b and ranges other than about 4.6 mm to about 5.6 mm are also within the scope of the embodiments of the present disclosure.

[0058] The width of the groove 218c (in Figure 2B The width of the groove 218c (denoted as dimension D10 in FIG. 1 ) may be included in the range of about 6.3 mm to about 7.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the groove 218c is less than about 6.3 mm or greater than about 7.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 218c is included in the range of about 6.3 mm to about 7.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 218c and ranges other than about 6.3 mm to about 7.6 mm are also within the scope of the embodiments of the present disclosure.

[0059] The width of the groove 218d (in Figure 2B The width of the groove 218d (denoted as dimension D11 in FIG. 1 ) may be included in the range of about 8.0 mm to about 9.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the width of the groove 218d is less than about 8.0 mm or greater than about 9.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the width of the groove 218d is included in the range of about 8.0 mm to about 9.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the width of the groove 218d and ranges other than about 8.0 mm to about 9.6 mm are also within the scope of the embodiments of the present disclosure.

[0060] The diameter of the hole 210 (in Figure 2BThe diameter of the hole 210 (represented as dimension D12 in FIG. 1 ) may be included in the range of about 7.1 mm to about 8.5 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 210 is less than about 7.1 mm or greater than about 8.5 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 210 is included in the range of about 7.1 mm to about 8.5 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 210 and ranges other than about 7.1 mm to about 8.5 mm are also within the scope of the embodiments of the present disclosure.

[0061] The diameter of the hole 212a (in Figure 2B The diameter of the hole 212a (represented as dimension D13 in FIG. 2 ) may be included in the range of about 2.9 mm to about 3.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 212a is less than about 2.9 mm or greater than about 3.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 212a is included in the range of about 2.9 mm to about 3.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 212a and ranges other than about 2.9 mm to about 3.6 mm are also within the scope of the embodiments of the present disclosure.

[0062] The diameter of hole 212b (in Figure 2B The diameter of the hole 212 b (denoted as dimension D14 in FIG. 1 ) may be included in the range of about 4.6 mm to about 5.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 212 b is less than about 4.6 mm or greater than about 5.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 212 b is included in the range of about 4.6 mm to about 5.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 212 b and ranges other than about 4.6 mm to about 5.6 mm are also within the scope of the embodiments of the present disclosure.

[0063] The diameter of the hole 212c (in Figure 2BThe diameter of the hole 212c (represented as dimension D15 in FIG. 2 ) may be included in the range of about 6.3 mm to about 7.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 212c is less than about 6.3 mm or greater than about 7.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 212c is included in the range of about 6.3 mm to about 7.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 212c and ranges other than about 6.3 mm to about 7.6 mm are also within the scope of the embodiments of the present disclosure.

[0064] The diameter of the hole 212d (in Figure 2B The diameter of the hole 212d (represented as dimension D16 in FIG. 2 ) may be included in the range of about 8.0 mm to about 9.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 212d is less than about 8.0 mm or greater than about 9.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 212d is included in the range of about 8.0 mm to about 9.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 212d and ranges other than about 8.0 mm to about 9.6 mm are also within the scope of the embodiments of the present disclosure.

[0065] The diameter of the hole 214a (in Figure 2B The diameter of the hole 214a (represented as dimension D17 in FIG. 2 ) may be included in the range of about 3.8 mm to about 4.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 214a is less than about 3.8 mm or greater than about 4.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 214a is included in the range of about 3.8 mm to about 4.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 214a and ranges other than about 3.8 mm to about 4.6 mm are also within the scope of the embodiments of the present disclosure.

[0066] The diameter of hole 214b (in Figure 2BThe diameter of the hole 214b (denoted as dimension D18 in FIG. 1 ) may be included in the range of about 3.8 mm to about 4.6 mm to provide sufficient flow of the process gas through the single-layer plate 202. If the diameter of the hole 214b is less than about 3.8 mm or greater than about 4.6 mm, the flow of the process gas through the single-layer plate 202 may cause a reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the diameter of the hole 214b is included in the range of about 3.8 mm to about 4.6 mm, the flow of the process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the diameter of the hole 214b and ranges other than about 3.8 mm to about 4.6 mm are also within the scope of the embodiments of the present disclosure.

[0067] The spacing between the grouping of holes 214b (or the grouping of holes 214a) and the grouping of slots 218d (in Figure 2B The spacing between the groupings of holes 214b and the groupings of slots 218d may be less than about 110 mm to provide adequate flow of process gas through the single-layer plate 202. If the spacing between the groupings of holes 214b and the groupings of slots 218d is greater than about 110 mm, the flow of process gas through the single-layer plate 202 may cause reduced uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the spacing between the groupings of holes 214b and the groupings of slots 218d is less than about 110 mm, the flow of process gas through the single-layer plate 202 may promote uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the spacing between the groupings of holes 214b and the groupings of slots 218d are also within the scope of the embodiments of the present disclosure.

[0068] The spacing between the grouping of holes 214a and the grouping of holes 214b (in Figure 2B The spacing between the grouping of holes 214a and the grouping of holes 214b may be less than about 123 mm to provide sufficient flow of process gas through the single-layer plate 202. If the spacing between the grouping of holes 214a and the grouping of holes 214b is greater than about 123 mm, the flow of process gas through the single-layer plate 202 may cause a reduced uniformity in the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. If the spacing between the grouping of holes 214a and the grouping of holes 214b is less than about 123 mm, the flow of process gas through the single-layer plate 202 may promote the uniformity of the gas flow rate distribution and / or the temperature distribution of the process gas across the single-layer plate 202. However, other values ​​for the spacing between the grouping of holes 214a and the grouping of holes 214b are also within the scope of the embodiments of the present disclosure.

[0069] The density of the holes 210, 212a-212b, 214a, and 214b in the gas permeation pattern 204 may be included in a range of about 200 per square millimeter to about 80,000 per square millimeter to provide sufficient flow of the process gas through the single-layer board 202. If the density of the holes 210, 212a-212b, 214a, and 214b in the gas permeation pattern 204 is less than about 200 per square millimeter or greater than about 80,000 per square millimeter, the flow of the process gas through the single-layer board 202 may cause a reduced uniformity in the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. If the density of the holes 210, 212a-212b, 214a, and 214b in the gas permeation pattern 204 is included in the range of about 200 per square millimeter to about 80,000 per square millimeter, the flow of the process gas through the single-layer board 202 can promote the uniformity of the gas flow rate distribution and / or temperature distribution of the process gas across the single-layer board 202. However, other values ​​for the density of the holes 210, 212a-212b, 214a, and 214b in the gas permeation pattern 204 and ranges other than about 200 per square millimeter to about 80,000 per square millimeter are also within the scope of the embodiments of the present disclosure.

[0070] As shown above, provide Figure 2A and Figure 2B As an example. Other examples can be related to Figure 2A and Figure 2B The content described is different.

[0071] FIG. 3A to FIG. 3D is a diagram of an exemplary embodiment 300 of a solder reflow operation as described herein. The solder reflow operation is performed using the semiconductor processing tool 100 as described herein. The solder reflow operation is performed to solder a semiconductor component 106 to a semiconductor package substrate 104 to form a semiconductor device package 102 .

[0072] like Figure 3A As shown in , in 302, the semiconductor package substrate 104 (and in some examples, the related semiconductor component 106) is provided to the conveyor device 114 through the load port 112 and through the buffer section 116. A transport vehicle may be used to provide the semiconductor package substrate 104 to the conveyor device 114. In some embodiments, the controller 154 provides one or more signals to the transport vehicle to cause the transport vehicle to transfer the semiconductor package substrate 104 to the conveyor device 114.

[0073] At 304 , the conveyor device 114 is used to move the semiconductor package substrate 104 through the plurality of heating sections 118 a - 118 n to reflow solder paste on the solder pads 108 between the semiconductor component 106 and the semiconductor package substrate 104 to bond the semiconductor component 106 to the semiconductor package substrate 104 .

[0074] The controller 154 provides one or more signals to the conveyor device 114 to move the semiconductor device package 102 through the heating sections 118a-118n along the travel direction 120. In addition, the controller 154 provides one or more signals to the section heater assemblies 126a-126n to cause the heating elements 138 of the heater device 136 to heat the incoming ambient air based on the respective temperature set points for each of the section heater assemblies 126a-126n. The respective temperature set points can be based on the temperature profile for the semiconductor device package 102. In some embodiments, the controller 154 configures the respective temperature set points for each of the section heater assemblies 126a-126n so that the temperature of the semiconductor device package 102 increases to the melting point of the solder paste on the solder pads 108 as the semiconductor device package 102 moves through the one or more heating sections 118a-118n. In some embodiments, the controller 154 configures the respective temperature set points for each of the zone heater assemblies 126a-126n so that the temperature of the semiconductor device package 102 is reduced from the melting point of the solder paste as the semiconductor device package 102 moves through the heating zones 118a-118n. This enables the semiconductor device package 102 to cool down gradually after reflowing the solder paste (rather than quickly reducing the temperature of the semiconductor device package 102 to room temperature), which can reduce the likelihood of cracks in the solder joints between the semiconductor component 106 and the solder pads 108.

[0075] like Figure 3B As shown in , as part of heating the semiconductor device package 102 in the heating zone using the zone heater assembly 126 at 304, the controller 154 can provide one or more signals to the zone heater assembly 126 to cause the zone heater assembly 126 to generate a process gas 306 for heating the semiconductor device package 102. The process gas 306, which can include a mixture of one or more inlet gases, is provided to the associated heating zone through the exhaust port 150 of the zone heater assembly 126.

[0076] One or more signals provided by the controller 154 may cause the segment heater assembly 126 to receive the inert gas 308a through the one or more inert gas inlets 134a and the ambient gas 308b through the one or more ambient gas inlets 304b. The ambient gas 308b may be provided into the mixing chamber 140 of the segment heater assembly 126 through the one or more heater devices 136. The heating elements 138 in the one or more heater devices 136 may heat the ambient gas 308b (e.g., may increase its temperature) so that the temperature of the ambient gas 308b satisfies a temperature threshold associated with a temperature set point for the segment heater assembly 126.

[0077] The heated ambient gas 308b is then provided into the mixing chamber 140, where the heated ambient gas 308b mixes with the inert gas 308a in a mixing zone 310 in the mixing chamber 140. The inert gas 308a and the heated ambient gas 308b are directed to the mixing zone 310 by one or more single-sided gas guide racks 142a at opposite ends of the mixing chamber 140. The mixing of the inert gas 308a and the heated ambient gas 308b in the mixing zone 310 causes the formation of the process gas 306.

[0078] In 310, the double-sided flow deflector shelf 142b at the center of the mixing chamber 140 directs the process gas 306 upward into the gas blower device 144, and the gas blower device 144 directs the process gas 306 through one or more gas outlets 146 in 314. The process gas 306 passes through the divider plate 148 and flows through the gas deflector 152 to the exhaust port 150, and the process gas 306 is provided through the exhaust port 150 to the heating section associated with the section heater assembly 126 to heat the semiconductor device package 102 passing through the heating section.

[0079] like Figure 3B As further shown in FIG. 1 , the wafer / die transport tool can be used to arrange the semiconductor device packages 102 in a plurality of rows 130 a-130 i on a conveyor device 114, each of the rows 130 a-130 i including a plurality of semiconductor device packages 102. The conveyor device 114 is used to provide rows 130 a-130 i of semiconductor device packages 102 to be heated by each zone heater assembly 126. Each semiconductor device package 102 in the row of semiconductor device packages 102 is simultaneously exposed to the process gas 314 in the associated heating zone. This increases the throughput of the semiconductor processing tool 100 and enables the semiconductor processing tool 100 to process a greater number of semiconductor device packages 102 in a period of time (e.g., a greater UPH) than processing one semiconductor device package 102 at a time.

[0080] like Figure 3CAs shown in , the gas deflectors 152 described herein provide uniform flow of process gas 306 across the heating section 118 associated with the section heater assembly 126. The uniform flow of process gas 306 provided by the gas deflectors 152 described herein enables multiple rows 130 of semiconductor device packages 102 to be processed simultaneously in the heating section 118, which increases the throughput of the semiconductor processing tool 100. Figure 3C , the horizontal flow field and temperature of the process gas 306 are substantially uniform across the xy plane of the heating section 118. This enables a greater number of semiconductor device packages 102 to be processed simultaneously across the heating section 118 than if another gas flow guide were used. The rows 130 of semiconductor device packages 102 can be positioned on the conveyor device 114 along the y direction so that the semiconductor device packages 102 pass under the gas permeation patterns 204a and 204b in the gas flow guide 152. The gas permeation patterns 204a and 204b in the gas flow guide 152 promote uniformity of the gas flow rate and temperature of the process gas 306 across the xy plane of the heating section 118. Figure 3C In particular, a thermal map of the heating section 118 is shown, illustrating the uniformity of the temperature 316 across the xy plane of the heating section 118 .

[0081] In some embodiments, the single layer plate 202 of the gas deflector 152, the gas permeation patterns 204a and 204b in the single layer plate 202, and / or the blocking plates 208 at the corners of the single layer plate 202 enable low variations in the gas flow rate of the process gas 306 across the xy plane of the heating section 118. For example, the single layer plate 202 of the gas deflector 152 and the gas permeation patterns 204a and 204b in the single layer plate 202 can enable a difference of about 3.5% or less between a maximum gas flow rate of the process gas 306 and a minimum gas flow rate of the process gas in the heating section 118. As another example, the single layer plate 202 of the gas deflector 152 and the gas permeation patterns 204a and 204b in the single layer plate 202 can enable a difference of about 0.15 meters per second (m / s) or less between a maximum gas flow rate of the process gas 306 and a minimum gas flow rate of the process gas in the heating section 118. However, other values ​​are also within the scope of the disclosed embodiments.

[0082] In some embodiments, the single layer plate 202 of the gas deflector 152, the gas permeation patterns 204a and 204b in the single layer plate 202, and / or the blocking plates 208 at the corners of the single layer plate 202 enable low variations in the temperature of the process gas 306 across the xy plane of the heating section 118. For example, the single layer plate 202 of the gas deflector 152 and the gas permeation patterns 204a and 204b in the single layer plate 202 can enable a difference of about 0.5% or less between the maximum temperature of the process gas 306 and the minimum temperature of the process gas in the heating section 118. As another example, the single layer plate 202 of the gas deflector 152 and the gas permeation patterns 204a and 204b in the single layer plate 202 can enable a difference of about 1.7 degrees Celsius or less between the maximum temperature of the process gas 306 and the minimum temperature of the process gas in the heating section 118. However, other values ​​are also within the scope of the disclosed embodiments.

[0083] like Figure 3D As shown in , upon completion of the semiconductor device package 102 traveling through the heating sections 118a-118n on the conveyor device 114, the semiconductor device package 102 is transferred to the unloading port 122 through the buffer section 124, and then transferred out of the semiconductor processing tool 100. In some embodiments, the semiconductor device package 102 is transferred to the unloading port 122, and then transferred out of the semiconductor processing tool 100 using a transport tool. In some embodiments, the controller 154 provides one or more signals to the transport tool to cause the transport tool to transfer the semiconductor package substrate 104 to the unloading port 122 and transfer out of the semiconductor processing tool 100.

[0084] As shown above, provide FIG. 3A to FIG. 3D As an example. Other examples can be related to FIG. 3A to FIG. 3D The content described is different.

[0085] Figure 4 This article describes the use of Figure 1A and Figure 1B400 of an example gas deflector 152 for use in a semiconductor processing tool 100. The example gas deflector 152 example 400 is similar to the example gas deflector 152 example 200 and includes a similar arrangement of components 202-218d. However, instead of an L-shaped baffle plate 208, the example gas deflector 152 example 400 includes angled baffle plates 208 at respective corners of the single layer plate 202. The angled baffle plates 208 extend in a straight line between the side 202a and the end 202b of the single layer plate 202. The angled baffle plates 208 also extend in the z-direction, which is orthogonal to the xy plane in which the single layer plate 202 of the gas deflector 152 is located. The angled baffle plates 208 may extend from the single layer plate 202 to a z-direction height (in Figure 4 14 and 150). The z-direction height of the angled baffle plate 208 is included in the range of about 20 mm to about 65 mm. If the z-direction height of the angled baffle plate 208 is less than about 20 mm, the angled baffle plate 208 may not effectively block leakage of the process gas 306 above the angled baffle plate 208. If the z-direction height of the angled baffle plate 208 is greater than about 65 mm, the gas deflector 152 may not be installed in the segment heater assembly 126 between the divider plate 148 and the exhaust port 150 of the segment heater assembly 126. If the z-direction height of the angled baffle plate 208 is included in the range of about 20 mm to about 65 mm, the angled baffle plate 208 may adequately block leakage of the process gas 306 above the angled baffle plate 208 while still enabling the gas deflector 152 to be installed in the segment heater assembly 126 between the divider plate 148 and the exhaust port 150 of the segment heater assembly 126. However, other values ​​and ranges other than about 20 mm to about 65 mm for the z-direction height of the angled blocking plate 208 are also within the scope of the disclosed embodiments.

[0086] In some embodiments, two or more of the zone heater assemblies 126a-126n include differently configured gas deflectors 152. For example, the zone heater assembly 126a may include a first gas deflector 152 having an L-shaped baffle 208 (as shown in the example 200 of the gas deflector 152), and the second zone heater assembly 126b may include a second gas deflector 152 having an angled baffle 208 (as shown in the example 400 of the gas deflector 152). As another example, the zone heater assembly 126a may include a first gas deflector 152 having a baffle 208 having a first z-direction height (e.g., first dimension D3, first dimension D21), and the zone heater assembly 126b may include a second gas deflector 152 having a baffle 208 having a second z-direction height (e.g., second dimension D3, second dimension D21) that is different from the first z-direction height.

[0087] As another example, the zone heater assembly 126a may include a first gas deflector 152 having a first set of gas permeation patterns 204a and 204b, and the second zone heater assembly 126b may include a second gas deflector 152 having a second set of gas permeation patterns 204a and 204b that is different from the first set of gas permeation patterns 204a and 204b. For example, the first set of gas permeation patterns 204a and 204b may include a first arrangement of holes 210, and the second set of gas permeation patterns 204a and 204b may include a second arrangement of holes 210 that is different from the first arrangement of holes 210. As another example, the first set of gas permeation patterns 204a and 204b may include a first arrangement of holes 212a-212d, and the second set of gas permeation patterns 204a and 204b may include a second arrangement of holes 212a-212d that is different from the first arrangement of holes 212a-212d. As another example, the first gas permeation pattern 204a and 204b group may include a first arrangement of holes 214a and 214b, and the second gas permeation pattern 204a and 204b group may include a second arrangement of holes 214a and 214b that is different from the first arrangement of holes 214a and 214b. As another example, the first gas permeation pattern 204a and 204b group may include a first arrangement of grooves 216a-216c, and the second gas permeation pattern 204a and 204b group may include a second arrangement of grooves 216a-216c that is different from the first arrangement of grooves 216a-216c. As another example, the first gas permeation pattern 204a and 204b group may include a first arrangement of grooves 218a-218d, and the second gas permeation pattern 204a and 204b group may include a second arrangement of grooves 218a-218d that is different from the first arrangement of grooves 218a-218d.

[0088] In some embodiments, the zone heater assembly 126 may include a gas deflector 152 having different configurations and / or different arrangements of the gas permeation patterns 204a and 204b for the gas deflector 152. For example, the gas permeation pattern 204a may include a first arrangement of holes 210, and the gas permeation pattern 204b may include a second arrangement of holes 210 that is different from the first arrangement of holes 210. As another example, the gas permeation pattern 204a may include a first arrangement of holes 212a-212d, and the gas permeation pattern 204b may include a second arrangement of holes 212a-212d that is different from the first arrangement of holes 212a-212d. As another example, the gas permeation pattern 204a may include a first arrangement of holes 214a and 214b, and the gas permeation pattern 204b may include a second arrangement of holes 214a and 214b that is different from the first arrangement of holes 214a and 214b. As another example, the gas permeation pattern 204a may include a first arrangement of grooves 216a-216c, and the gas permeation pattern 204b may include a second arrangement of grooves 216a-216c that is different from the first arrangement of grooves 216a-216c. As another example, the gas permeation pattern 204a may include a first arrangement of grooves 218a-218d, and the gas permeation pattern 204b may include a second arrangement of grooves 218a-218d that is different from the first arrangement of grooves 218a-218d.

[0089] The configuration of the gas deflector 152 in the zone heater assembly 126 can be configured based on the temperature set point for the associated heating zone 118, can be based on the position of the zone heater assembly 126 in the arrangement of the zone heater assemblies 126a-126n along the conveyor device 114 and / or can be based on another parameter.

[0090] As shown above, provide Figure 4 As an example. Other examples can be related to Figure 4 The content described is different.

[0091] Figure 5 is a diagram of exemplary components of a device 500 described herein. Device 500 may correspond to controller 154 and / or another device described herein. In some embodiments, zone heater assemblies 126a-126n, controller 154, and / or another device of semiconductor processing tool 100 may include one or more devices 500 and / or one or more components of device 500. Figure 5 As shown in , device 500 may include a bus 510 , a processor 520 , a memory 530 , an input component 540 , an output component 550 , and / or a communication component 560 .

[0092] The bus 510 may include one or more components that enable wired and / or wireless communication between components of the device 500. ... Figure 5 Two or more components of a computer system are coupled together, such as via operational coupling, communication coupling, electronic coupling, and / or electrical coupling. For example, bus 510 may include electrical connections (e.g., wires, traces, and / or leads) and / or wireless buses. Processor 520 may include a central processing unit, a graphics processing unit, a microprocessor, a controller, a microcontroller, a digital signal processor, a field programmable gate array, an application specific integrated circuit, and / or another type of processing component. Processor 520 may be implemented in hardware, firmware, or a combination of hardware and software. In some embodiments, processor 520 may include one or more processors that can be programmed to implement one or more operations or processes described elsewhere herein.

[0093] The memory 530 may include volatile and / or non-volatile memory. For example, the memory 530 may include a random access memory (RAM), a read-only memory (ROM), a hard drive, and / or another type of memory (e.g., flash memory, magnetic memory, and / or optical memory). The memory 530 may include an internal memory (e.g., RAM, ROM, or hard drive) and / or a removable memory (e.g., removable via a universal serial bus connection). The memory 530 may be a non-temporary computer-readable medium. The memory 530 may store information, one or more instructions, and / or software (e.g., one or more software applications) related to the operation of the device 500. In some embodiments, the memory 530 may include one or more memories such as coupled (e.g., communicatively coupled) to one or more processors (e.g., processor 520) via bus 510. The communicatively coupled between the processor 520 and the memory 530 may enable the processor 520 to read and / or process information stored in the memory 530 and / or store information in the memory 530.

[0094] Input assembly 540 can enable device 500 to receive input, such as user input and / or sensed input. For example, input assembly 540 can include touch screen, keyboard, keypad, mouse, button, microphone, switch, sensor, GPS sensor, GNSS sensor, accelerometer, gyroscope and / or actuator. Output assembly 550 can enable device 500 to provide output, such as via display, loudspeaker and / or light emitting diode. Communication assembly 560 can enable device 500 to communicate with other devices via wired connection and / or wireless connection. For example, communication assembly 560 can include receiver, transmitter, transceiver, modem, network interface card and / or antenna.

[0095] The device 500 may implement one or more operations or processes described herein. For example, a non-transitory computer-readable medium (e.g., memory 530) may store an instruction group (e.g., one or more instructions or codes) for execution by the processor 520. The processor 520 may execute the instruction group to implement one or more operations or processes described herein. In some embodiments, the execution of the instruction group by one or more processors 520 causes one or more processors 520 and / or the device 500 to implement one or more operations or processes described herein. In some embodiments, hard-wired circuits may be used instead of instructions or in combination with instructions to implement one or more operations or processes described herein. Additionally or alternatively, the processor 520 may be configured to implement one or more operations or processes described herein. Therefore, the embodiments described herein are not limited to any specific combination of hardware circuits and software.

[0096] supply Figure 5 The number and arrangement of components shown in FIG. 5 are provided as examples. Device 500 may include Figure 5 Additional components, fewer components, different components, or differently arranged components than those shown in . Additionally or alternatively, a component group (eg, one or more components) of device 500 may implement one or more functions described as being implemented by another component group of device 500 .

[0097] Figure 6 6 is a flow chart of an exemplary process 600 associated with the solder reflow operation described herein. The solder reflow operation may be performed to bond one or more semiconductor components 106 to the semiconductor package substrate 104 of one or more semiconductor device packages 102. In some embodiments, Figure 6 One or more process blocks of are implemented by a solder reflow tool (e.g., semiconductor processing tool 100). In some embodiments, Figure 6 One or more process blocks of are implemented by another device or device group that is separate from or includes the reflow solder tool, such as a zone heater assembly (e.g., the zone heater assembly 126), a controller (e.g., the controller 154), and / or a transport, among other examples. Additionally or alternatively, Figure 6 One or more process blocks of may be implemented by one or more components of the device 500 , such as the processor 520 , the memory 530 , the input component 540 , the output component 550 , and / or the communication component 560 .

[0098] like Figure 6As shown in , the process 600 may include providing a plurality of semiconductor package substrates to a conveyor device of a reflow soldering tool (block 610). For example, a transport tool may be used to provide a plurality of semiconductor package substrates 104 to a conveyor device 114 of a reflow soldering tool (e.g., semiconductor processing tool 100), as described herein.

[0099] like Figure 6 As further shown in FIG. 6 , the process 600 may include providing a plurality of semiconductor package substrates to a heating section of a solder reflow tool using a conveyor device (block 620). For example, a solder reflow tool (e.g., semiconductor processing tool 100) may be used to provide a plurality of semiconductor package substrates 104 to a heating section 118 (e.g., heating sections 118a-118n) of the solder reflow tool using a conveyor device 114, as described herein.

[0100] like Figure 6 As further shown in FIG. 6 , process 600 may include bonding one or more semiconductor components to each of a plurality of semiconductor package substrates using a process gas provided to a heating zone, wherein the process gas is provided to the heating zone using a zone heater assembly including a single layer of gas deflectors (block 630). For example, a solder reflow tool (e.g., semiconductor processing tool 100) may be used to bond one or more semiconductor components 106 to each of a plurality of semiconductor package substrates 104 using a process gas 306 provided to a heating zone 118, as described herein. In some embodiments, the process gas 306 is provided to the heating zone 118 using a zone heater assembly 126 (e.g., zone heater assemblies 126a-126n) including a single layer of gas deflectors (e.g., gas deflectors 152 including a single layer of plate 202).

[0101] Process 600 may include additional embodiments, such as any single embodiment or any combination of embodiments described below and / or in connection with one or more other processes described elsewhere herein.

[0102] In a first embodiment, the process 600 includes providing the process gas 306 through the exhaust port 150 of the zone heater assembly 126, wherein the process gas 306 is provided to the exhaust port 150 through a single-layer gas deflector (eg, a gas deflector 152 including a single-layer plate 202).

[0103] In the second embodiment, alone or in combination with the first embodiment, the process gas 306 is provided to the exhaust port 150 through the first gas permeation pattern 204 a in the single layer plate 202 of the gas guide 152 and through the second gas permeation pattern 204 b in the single layer plate 202 of the gas guide 152 .

[0104] In a third embodiment, alone or in combination with one or more of the first and second embodiments, providing a plurality of semiconductor package substrates 104 to a conveyor device 114 of a reflow solder tool (e.g., a semiconductor processing tool 100) includes arranging the plurality of semiconductor package substrates 104 in a plurality of rows 130a-130i of semiconductor package substrates 104 on the conveyor device 114, wherein each row 130 of the plurality of rows 130a-130i of the semiconductor package substrates 104 includes two or more of the plurality of semiconductor package substrates 104, and wherein providing the plurality of semiconductor package substrates 104 to a heating section 118 includes providing a row 130 of the plurality of rows 130a-130i of the semiconductor package substrates 104 to the heating section 118, wherein each semiconductor package substrate 104 in the row 130 of the semiconductor package substrates 104 is simultaneously exposed to a process gas 306 in the heating section 118.

[0105] Although Figure 6 An exemplary block diagram of process 600 is shown, but in some embodiments, process 600 includes Figure 6 Additional blocks, fewer blocks, different blocks, or differently arranged blocks than those depicted in process 600 may be implemented in parallel. Additionally or alternatively, two or more of the blocks of process 600 may be implemented in parallel.

[0106] In this way, the zone heater assembly of the reflow soldering tool includes a gas deflector having a single-layer structure. The single-layer structure may include one or more gas permeation patterns, through which the process gas will flow from one or more gas outlets to the exhaust port of the zone heater assembly. The one or more gas permeation patterns in the single-layer structure promote the uniformity of the airflow through the exhaust port and into the heating zone of the reflow soldering tool. The uniformity of the airflow of the process gas enables the convective heat provided by the process gas to be evenly distributed across the heating zone. In this way, the gas deflector described herein can reduce hot spots and / or cold spots in the heating zone, which enables greater flexibility when placing the semiconductor package substrate on the conveyor device of the reflow soldering tool. This enables the use of the reflow soldering tool to process semiconductor package substrates at a greater number and / or rate than without a gas deflector, which increases the productivity (e.g., UPH) of the reflow soldering tool. In addition, the increased temperature uniformity in the heating section increases the likelihood that sufficient convective heat is provided to the semiconductor package substrate on the conveyor device to form a high-quality solder joint between the semiconductor package substrate and the components bonded to the semiconductor package substrate. This reduces the likelihood that the solder joint will fail, which can cause a reduced failure rate of the bond between the components on the semiconductor package substrate, and / or can increase the yield of semiconductor device packages produced by the reflow solder tool.

[0107] As described in more detail above, some embodiments described herein provide a gas deflector for use in a solder reflow tool. The gas deflector includes a single layer board. The gas deflector includes a gas permeation pattern in the single layer board, wherein the gas permeation pattern includes a plurality of holes spaced apart from each other and a plurality of slots spaced apart from each other.

[0108] As described in more detail above, some embodiments described herein provide a reflow soldering tool. The reflow soldering tool includes a conveyor device configured to provide a semiconductor package substrate to a heating zone. The reflow soldering tool includes a zone heater assembly configured to provide a process gas to the heating zone, wherein the zone heater assembly includes one or more gas outlets, an exhaust port, and a single-layer gas deflector located between the exhaust port and the one or more gas outlets.

[0109] As described in more detail above, some embodiments described herein provide methods. The method includes providing a plurality of semiconductor package substrates to a conveyor device of a reflow soldering tool. The method includes using the conveyor device to provide the plurality of semiconductor package substrates to a heating section of the reflow soldering tool. The method includes bonding one or more semiconductor components to each of the plurality of semiconductor package substrates using a process gas provided to the heating section, wherein the process gas is provided to the heating section using a section heater assembly including a single layer gas deflector.

[0110] Some embodiments of the present application provide a gas deflector for use in a solder reflow tool, the gas deflector comprising: a single-layer board; and a gas permeation pattern located in the single-layer board, wherein the gas permeation pattern comprises: a plurality of holes spaced apart from each other; and a plurality of grooves spaced apart from each other.

[0111] In some embodiments, the gas permeation pattern is a first gas permeation pattern in the single-layer plate; wherein the gas deflector further comprises: a second gas permeation pattern located in the single-layer plate. In some embodiments, the gas deflector further comprises: one or more grooves located in the single-layer plate and located between the first gas permeation pattern and the second gas permeation pattern. In some embodiments, the plurality of grooves have a curved shape in a top view of the single-layer plate; and wherein the one or more grooves have a rectangular shape in the top view of the single-layer plate. In some embodiments, the plurality of grooves have rounded ends in a top view of the single-layer plate; and wherein the one or more grooves have ends orthogonal to the sides of the one or more grooves in the top view of the single-layer plate. In some embodiments, the plurality of holes are a first plurality of holes; wherein the plurality of grooves are a first plurality of grooves; and wherein the second gas permeation pattern comprises: a second plurality of holes spaced apart from each other; and a second plurality of grooves spaced apart from each other. In some embodiments, the arrangement of the first plurality of holes in the first gas permeation pattern and the arrangement of the second plurality of holes in the second gas permeation pattern are different arrangements. In some embodiments, the arrangement of the first plurality of slots in the first gas permeation pattern and the arrangement of the second plurality of slots in the second gas permeation pattern are different arrangements.

[0112] Other embodiments of the present application provide a solder reflow tool, comprising: a conveyor device configured to provide a semiconductor package substrate to a heating section; and a section heater assembly configured to provide a process gas to the heating section, wherein the section heater assembly comprises: one or more gas outlets; an exhaust port; and a single-layer gas deflector located between the exhaust port and the one or more gas outlets.

[0113] In some embodiments, the reflow soldering tool further comprises: one or more gas deflector racks, wherein the single-layer gas deflector is located between the exhaust port and the one or more gas deflector racks. In some embodiments, the zone heater assembly is a first zone heater assembly included in the reflow soldering tool; wherein the heating zone is a first heating zone; wherein the process gas is a first process gas; wherein the single-layer gas deflector is a first single-layer gas deflector; and wherein the reflow soldering tool further comprises: a second zone heater assembly configured to provide a second process gas to a second heating zone, wherein the second zone heater assembly comprises a second single-layer gas deflector. In some embodiments, the single-layer gas deflector comprises: a single-layer plate extending in a first direction; and a plurality of blocking plates attached to the single-layer plate, wherein the plurality of blocking plates extend from the single-layer plate in a second direction orthogonal to the first direction. In some embodiments, a blocking plate of the plurality of blocking plates has an L-shape in a top view of the single-layer gas deflector. In some embodiments, a baffle of the plurality of baffles comprises: a first segment (208a); and a second segment (208b) orthogonal to the first segment. In some embodiments, a baffle of the plurality of baffles extends between an end and a side of the single-layer gas deflector. In some embodiments, each of the plurality of baffles is located at a corresponding corner of the single-layer plate.

[0114] Still other embodiments of the present application provide a method comprising: providing a plurality of semiconductor package substrates onto a conveyor device of a reflow solder tool; providing the plurality of semiconductor package substrates to a heating section of the reflow solder tool using the conveyor device; and joining one or more semiconductor components to each of the plurality of semiconductor package substrates using a process gas provided to the heating section, wherein the process gas is provided to the heating section using a section heater assembly comprising a single-layer gas deflector.

[0115] In some embodiments, the method further comprises: providing the process gas through an exhaust port of the zone heater assembly, wherein the process gas is provided to the exhaust port through the single-layer gas deflector. In some embodiments, the process gas is provided to the exhaust port through a first gas permeation pattern in the single-layer gas deflector and through a second gas permeation pattern in the single-layer gas deflector. In some embodiments, providing the plurality of semiconductor package substrates to the conveyor device of the reflow solder tool comprises: arranging the plurality of semiconductor package substrates in a plurality of semiconductor package substrate rows on the conveyor device, wherein each semiconductor package substrate row of the plurality of semiconductor package substrate rows comprises two or more of the plurality of semiconductor package substrates; and wherein providing the plurality of semiconductor package substrates to the heating zone comprises: providing a semiconductor package substrate row of the plurality of semiconductor package substrate rows to the heating zone, wherein each semiconductor package substrate in the semiconductor package substrate row is simultaneously exposed to the process gas in the heating zone.

[0116] As used herein, "satisfying a threshold" may (depending on the context) refer to a value greater than a threshold, greater than or equal to a threshold, less than a threshold, less than or equal to a threshold, equal to a threshold, not equal to a threshold, etc.

[0117] When a "processor" or "one or more processors" (or another device or component, such as a "controller" or "one or more controllers") is described or claimed (either in a single claim or across multiple claims) as performing or configured to perform multiple operations, the language is intended to broadly cover a variety of processor architectures and environments. For example, unless otherwise expressly required (e.g., by use of "a first processor" and "a second processor" or other language that distinguishes between processors in a claim), the language is intended to cover a single processor that performs or is configured to perform all operations, a group of processors that collectively perform or are configured to perform all operations, a first processor that performs or is configured to perform a first operation and a second processor that performs or is configured to perform a second operation, or any combination of processors that perform or are configured to perform operations. For example, when a claim has the form "configured to: perform X; perform Y; and one or more processors that perform Z," the claim should be interpreted to mean "one or more processors configured to perform X; one or more (possibly different) processors configured to perform Y; and one or more (possibly different) processors configured to perform Z."

[0118] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the embodiments of the present disclosure. Those skilled in the art should understand that they can easily use the embodiments of the present disclosure as a basis to design or modify other processes and structures for performing the same purpose and / or achieving the same advantages as the embodiments introduced herein. Those skilled in the art should also appreciate that such equivalent constructions do not deviate from the spirit and scope of the embodiments of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the embodiments of the present disclosure.

Claims

1. A gas deflector for use in a solder reflow tool, the gas deflector comprising: Single-layer board; as well as A gas permeation pattern, located in the single layer, Wherein, the gas permeation pattern comprises: a plurality of holes spaced apart from one another; and A plurality of slots are spaced apart from each other.

2. The gas deflector according to claim 1, wherein: The gas permeation pattern is a first gas permeation pattern in the single-layer board; Wherein, the gas deflector further comprises: A second gas permeation pattern is located in the single-layer board.

3. The gas deflector according to claim 2, further comprising: One or more grooves are located in the single-layer plate and between the first gas permeation pattern and the second gas permeation pattern.

4. The gas deflector according to claim 3, wherein: The plurality of grooves have a curved shape in a top view of the single-layer plate; and Wherein, the one or more grooves have a rectangular shape in the top view of the single-layer board.

5. The gas deflector according to claim 3, wherein: The plurality of grooves have rounded ends in a top view of the single-layer board; and Wherein, the one or more grooves have ends that are orthogonal to the sides of the one or more grooves in the top view of the single-layer board.

6. The gas deflector according to claim 2, wherein: the plurality of apertures being a first plurality of apertures; wherein the plurality of slots is a first plurality of slots; and Wherein, the second gas permeation pattern comprises: a second plurality of apertures spaced apart from one another; and A second plurality of slots are spaced apart from each other.

7. The gas deflector according to claim 6, wherein: An arrangement of the first plurality of holes in the first gas permeation pattern and an arrangement of the second plurality of holes in the second gas permeation pattern are different arrangements.

8. The gas deflector according to claim 6, wherein: An arrangement of the first plurality of grooves in the first gas permeating pattern and an arrangement of the second plurality of grooves in the second gas permeating pattern are different arrangements.

9. A solder reflow tool comprising: a conveyor device configured to provide a semiconductor package substrate to a heating section; as well as a zone heater assembly configured to provide a process gas to the heating zone, Wherein, the zone heater assembly comprises: one or more gas outlets; exhaust port; and A single-layer gas deflector is located between the exhaust port and the one or more gas outlets.

10. A method of operating a solder reflow tool, comprising: providing a plurality of semiconductor package substrates onto a conveyor device of a solder reflow tool; providing the plurality of semiconductor package substrates to a heating section of the solder reflow tool using the conveyor belt device; as well as bonding one or more semiconductor components to each of the plurality of semiconductor package substrates using a process gas provided to the heating section, Wherein, the process gas is provided to the heating section using a section heater assembly including a single-layer gas deflector.

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