Continuous chemical vapor deposition method, system, program and storage medium

Abstract

The present disclosure relates to the field of chemical vapor deposition technology, and in particular to a continuous chemical vapor deposition method, system, program, and storage medium. The method comprises: placing a first reaction container provided with a substrate at a second station to perform a chemical vapor deposition reaction; placing a second reaction container provided with a substrate at a first station, adjusting the atmosphere of a third station and the first station to be consistent with that of the second station; moving the first reaction container after the reaction is completed to the third station, and then moving the second reaction container to the second station to perform a chemical vapor deposition reaction. The continuous chemical vapor deposition method, system, program, and storage medium disclosed herein can improve the production efficiency of deposited products.

Description

Technical Field

[0001] The present disclosure relates to the technical field of chemical vapor deposition, and in particular to a continuous chemical vapor deposition method, system, program, and storage medium. Background Art

[0002] Silicon carbide is a representative ceramic material that is widely used throughout industry due to its excellent physical, chemical and electrical properties.

[0003] In recent years, the importance of silicon carbide has been increasing as the development of semiconductor processing components using it has been actively progressing. In particular, silicon carbide is widely used as a component for etching processes in semiconductor processing components due to its high plasma resistance.

[0004] The traditional method of manufacturing silicon carbide materials used in semiconductor etching process parts is to use chemical vapor deposition (CVD) to manufacture silicon carbide, which cannot meet the quality and performance requirements.

[0005] During chemical vapor deposition (CVD) of silicon carbide, a mixture of Si-containing gases such as SiH₄, SiCl₂, and SiCl₄ and C-containing gases such as C₂H₂, CH₄, and C₃H₄ is ​​used as the raw material, or a single gas such as CH₃SiCl₃, CH₃SiH₃, or (CH₃)₃SiH₃ is used as the raw material for deposition. Conventional CVD silicon carbide materials have excellent quality but low productivity. Summary of the Invention

[0006] In order to solve or at least partially solve the above technical problems, the present disclosure provides a continuous chemical vapor deposition method, system, program and storage medium.

[0007] A first aspect of the present disclosure provides a continuous chemical vapor deposition method, comprising the following steps:

[0008] The first reaction container provided with the substrate is placed at the second station to perform a chemical vapor deposition reaction;

[0009] The second reaction container provided with the substrate is placed at the first station, and the atmosphere of the third station and the first station is adjusted to be consistent with that of the second station;

[0010] The first reaction container after the reaction is completed is moved to the third station, and then the second reaction container is moved to the second station to perform a chemical vapor deposition reaction.

[0011] Optionally, after the step of moving the first reaction container after the reaction is completed to the third station, the method further includes:

[0012] heat-treating the first reaction container at the third station, and then lowering the temperature of the third station to room temperature;

[0013] Adjust the atmosphere of the third workstation to be consistent with the external environment;

[0014] taking out the first reaction container and the reaction product in the first reaction container;

[0015] placing a substrate in a third reaction vessel;

[0016] After the step of moving the second reaction container to the second station, the method further comprises:

[0017] Adjust the atmosphere of the first workstation to be consistent with the external environment;

[0018] Place the third reaction container into the first station to repeat the cycle.

[0019] Optionally, the third reaction container and the first reaction container are the same reaction container.

[0020] Optionally, after the step of placing each reaction container at each station, the method further includes:

[0021] Isolate the spatial connections between each workstation to make the atmosphere of each workstation independent;

[0022] The gas support device is docked with the set reaction container to provide a reaction atmosphere for the reaction container.

[0023] Another aspect of the present disclosure provides a method for controlling continuous chemical vapor deposition, comprising:

[0024] In response to a second in-position signal of the first reaction container at the second station, sending a deposition start signal to start chemical vapor deposition in the first reaction container at the second station;

[0025] In response to a first positioning signal of the second reaction container at the first station, issuing a first atmosphere adjustment signal to make the atmospheres of the first station and the second station consistent;

[0026] In response to the deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station, and to move the second reaction container to the second station.

[0027] Optionally, it also includes:

[0028] In response to a third in-position signal indicating that the first reaction container is at the third working position, a heat treatment signal is issued to perform heat treatment on the first reaction container;

[0029] In response to a heat treatment completion signal of the third station, a recovery signal is issued to reduce the temperature of the third station to room temperature and adjust the atmosphere of the third station to be consistent with the external environment;

[0030] In response to a signal indicating that the first reaction container is moved out of the third station, a second atmosphere adjustment signal is sent to make the atmospheres of the third station consistent with those of the second station.

[0031] Optionally, it also includes:

[0032] In response to a first positioning signal of the third reaction container at the first station, issuing a first atmosphere adjustment signal to make the atmospheres of the first station and the second station consistent;

[0033] In response to a third in-position signal indicating that the first reaction container is at the third station, a first moving signal is issued to move the third reaction container to the second station.

[0034] Optionally, in response to a second in-position signal of the first reaction vessel at the second station, sending a deposition start signal to start chemical vapor deposition in the first reaction vessel at the second station, further comprising:

[0035] In response to a second in-position signal of the first reaction vessel at the second workstation, sending a second docking signal to dock the gas support device with the first reaction vessel;

[0036] In response to a signal indicating that the gas support device and the first reaction container are docked, a deposition start signal is sent to start chemical vapor deposition in the first reaction container in the second station.

[0037] Optionally, in response to a deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station, and to move the second reaction container to the second station, further comprising:

[0038] In response to a deposition reaction completion signal, opening passages between the various workstations;

[0039] In response to the channel opening signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station, and the second reaction container is moved to the second station;

[0040] In response to a second position signal of the second reaction container at the second workstation, a channel closing signal is issued to close the channels between the various workstations.

[0041] Optionally, the method is used to deposit silicon carbide and its derivatives.

[0042] Another aspect of the present disclosure further provides a computer program, which, when executed, can implement the aforementioned method steps.

[0043] Another aspect of the present disclosure further provides a readable storage medium, which contains the aforementioned computer program.

[0044] Another aspect of the present disclosure provides a continuous chemical vapor deposition system, comprising:

[0045] The main device has a first working station, a second working station and a third working station;

[0046] A first reaction container and a second reaction container; the first reaction container is arranged at the second station, and the second reaction container is arranged at the first station;

[0047] The controller is configured to: in response to a second in-position signal of the first reaction vessel at the second station, send a deposition start signal to enable the first reaction vessel to start chemical vapor deposition in the second station;

[0048] In response to a signal indicating that the second reaction container is in position at the first station, a first atmosphere adjustment signal is issued to make the atmospheres of the first station and the second station consistent;

[0049] In response to the deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station, and to move the second reaction container to the second station.

[0050] Compared with the prior art, the continuous chemical vapor deposition equipment disclosed in the present invention can allocate the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent first and third stations, thereby realizing continuous production and processing. Since a transmission device is provided, the reaction vessel can be moved between the three chambers of the first station, the second station and the third station. This significantly improves convenience. Through the above design, the continuous chemical vapor deposition equipment and method provided by the present invention can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared to the intermittent equipment and methods of the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] To more clearly illustrate the embodiments of the present disclosure, the following briefly describes the relevant drawings. It should be understood that the drawings described below are only used to illustrate some embodiments of the present disclosure, and those skilled in the art can also obtain many other technical features and connection relationships not described herein based on these drawings.

[0052] Figure 1 is a schematic flow chart of a continuous chemical vapor deposition method according to an embodiment of the present disclosure;

[0053] Figure 2 is a signal flow diagram of a continuous chemical vapor deposition system according to an embodiment of the present disclosure;

[0054] Figure 3 is a three-dimensional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure;

[0055] Figure 4 1 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure, wherein two reaction vessels are provided, and the two reaction vessels are located at a first station and a second station, respectively;

[0056] Figure 5 1 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure, wherein two reaction vessels are provided, and the two reaction vessels are located at the second station and the third station, respectively;

[0057] Figure 6 is a schematic cross-sectional view of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure during a chemical vapor deposition operation;

[0058] Figure 7 This is a three-dimensional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure, with a portion of shielding removed to expose a reaction vessel;

[0059] Figure 8 is a longitudinal cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when provided with three reaction vessels;

[0060] Figure 9 is a partially enlarged cross-sectional schematic diagram of a continuous chemical vapor deposition apparatus near a gas interface according to an embodiment of the present disclosure;

[0061] Figure 10 It is a schematic transverse cross-sectional view of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure when the gate valve is open.

[0062] Description of reference numerals:

[0063] 1. Main unit; 11. First station; 111. First through hole; 12. Second station; 121. Second through hole; 13. Third station; 131. Third through hole; 2. Transmission unit; 21. Guide rail; 211. Fixing component; 212. Roller; 22. Push rod; 23. Pull rod; 3. Gas support unit; 4. Reaction vessel; 41. Quick-release unit; 411. Connecting cover; 412. Connecting hole; 413. Connecting chamber; 42. Gas interface; 5. Gate valve unit; 51. Gate; 52. Lifting drive. DETAILED DESCRIPTION

[0064] In the prior art, chemical vapor deposition (CVD) equipment typically consists of a reaction chamber connected to a gas support system. The gas support system mixes the raw materials used in the process with other process gases and supplies them to the reactor in a vapor phase, subject to the fulfillment of process conditions. The reactor thermally decomposes the supplied mixed gas under high temperature and a constant atmosphere, thereby depositing silicon carbide on a pre-placed substrate within the reaction chamber. The gas support system often also includes an exhaust mechanism to remove byproducts and excess mixed gas produced during the CVD process.

[0065] In the prior art, silicon carbide materials manufactured by chemical vapor deposition have excellent quality but low productivity. In view of this, the inventors of the present disclosure provide a continuous chemical vapor deposition apparatus and related methods to solve the above problems.

[0066] Several specific embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0067] One embodiment of the present disclosure provides a continuous chemical vapor deposition method, see Figure 1 As shown, the following steps are included:

[0068] The first reaction container 4 having the substrate is placed at the second station 12 to perform a chemical vapor deposition reaction;

[0069] The second reaction container 4 with the substrate is placed at the first station 11, and the atmosphere of the third station 13 and the first station 11 is adjusted to be consistent with that of the second station 12;

[0070] The first reaction container 4 after the reaction is completed is moved to the third station 13, and then the second reaction container 4 is moved to the second station 12 to perform a chemical vapor deposition reaction.

[0071] Another aspect of the present disclosure provides a continuous chemical vapor deposition system. Figure 2 、 Figure 3 As shown, including:

[0072] The main device 1 has a first workstation 11, a second workstation 12 and a third workstation 13;

[0073] A first reaction container 4 and a second reaction container 4; the first reaction container 4 is disposed at the second station 12, and the second reaction container 4 is disposed at the first station 11;

[0074] The controller is configured to: in response to a second in-position signal of the first reaction vessel 4 at the second workstation 12, send a deposition start signal to enable the first reaction vessel 4 to start chemical vapor deposition in the second workstation 12;

[0075] In response to the signal that the second reaction container 4 is in position at the first station 11, a first atmosphere adjustment signal is issued to make the atmospheres of the first station 11 and the second station 12 consistent;

[0076] In response to the deposition reaction completion signal, a second movement signal is issued to move the first reaction container 4 after the reaction is completed to the third station 13 , and to move the second reaction container 4 to the second station 12 .

[0077] One embodiment of the present disclosure further provides a continuous chemical vapor deposition device suitable for the above-mentioned continuous chemical vapor deposition method and system, see Figure 3 As shown, it includes:

[0078] A main device 1 and a transmission device 2 disposed in the main device 1, wherein the main device 1 has a first station 11, a second station 12, and a third station 13 connected in sequence by the transmission device 2;

[0079] The gas support device 3 is connected to the main device 1 and is used to provide a gas environment for the main device 1.

[0080] See also Figure 4 As shown, it also includes at least two reaction containers 4, which can be arranged in the main device 1 and switched between the first station 11, the second station 12 and the third station 13 under the drive of the transmission device 2. The gas support device 3 can establish a connection with the first reaction container 4 located in any one of the first station 11, the second station 12 and the third station 13, and provide a corresponding gas environment for the reaction container 4.

[0081] One of the two reaction vessels 4 is arranged in the second station 12 for chemical vapor deposition, and the other is arranged in the first station 11; the transmission device 2 can be used to move the reaction vessel 4 that has completed the deposition operation from the second station 12 to the third station 13; moreover, the transmission device 2 is also used to move the reaction vessel 4 that has completed the preparation operation from the first station 11 to the second station 12.

[0082] Among the three spaces possessed by the main device 1:

[0083] The first station 11 may be a preparation room for fixing and mounting the substrate using a fixture to prepare for the chemical vapor deposition process under the premise of matching the required production quantity.

[0084] The second workstation 12 may be a reaction chamber, which is similar to a conventional chemical vapor deposition device and is used to provide a reaction space for chemical vapor deposition.

[0085] The third station 13 can be a heat treatment chamber, which can be used to heat treat chemical vapor deposition products such as silicon carbide to control and improve the product's purity level. The third station 13 also facilitates rapid product harvesting after heat treatment. The gas support device 3 can provide the required gas to the first station 11, the second station 12, and the third station 13. The gas support device 3 may also include an exhaust mechanism capable of evacuating the gas.

[0086] Accordingly, in the continuous chemical vapor deposition method provided in the present disclosure, further, after the step of moving the first reaction container 4 after the reaction is completed to the third station 13, the following steps may be included:

[0087] Performing heat treatment on the first reaction container 4 located at the third station 13, and then reducing the temperature of the third station 13 to room temperature;

[0088] Adjust the atmosphere of the third station 13 to be consistent with the external environment;

[0089] Taking out the first reaction container 4 and the reaction product in the first reaction container 4;

[0090] placing a substrate in the third reaction vessel 4;

[0091] After the step of moving the second reaction container 4 to the second station 12, the method further includes:

[0092] Adjust the atmosphere of the first workstation 11 to be consistent with the external environment;

[0093] The third reaction container 4 is placed in the first station 11 to cycle.

[0094] On the other hand, it is easy to understand that from the perspective of computer control, see Figure 2 As shown, another embodiment of the present disclosure further provides a method for controlling continuous chemical vapor deposition, comprising:

[0095] In response to a second in-position signal of the first reaction vessel 4 at the second workstation 12 , a deposition start signal is issued to enable the first reaction vessel 4 to start chemical vapor deposition in the second workstation 12 ;

[0096] In response to a first positioning signal of the second reaction container 4 at the first station 11, a first atmosphere adjustment signal is issued to make the atmospheres of the first station 11 and the second station 12 consistent;

[0097] In response to the deposition reaction completion signal, a second movement signal is issued to move the first reaction container 4 after the reaction is completed to the third station 13 , and to move the second reaction container 4 to the second station 12 .

[0098] Optionally, it also includes:

[0099] In response to the first positioning signal of the third reaction container 4 at the first station 11, a first atmosphere adjustment signal is issued to make the atmospheres of the first station 11 and the second station 12 consistent; at the same time, the temperatures of the first station 11 and the second station 12 can also be adjusted to be nearly consistent.

[0100] In response to the third in-position signal indicating that the first reaction container 4 is at the third workstation 13 , a first moving signal is issued to move the third reaction container 4 to the second workstation 12 .

[0101] Optionally, it also includes:

[0102] In response to a third in-position signal indicating that the first reaction container 4 is in the third workstation 13, a heat treatment signal is issued to perform heat treatment on the first reaction container 4;

[0103] In response to the heat treatment completion signal of the third station 13, a recovery signal is issued to reduce the temperature of the third station 13 to room temperature and adjust the atmosphere of the third station 13 to be consistent with the external environment;

[0104] In response to the signal for the first reaction container 4 to be moved out of the third station 13 , a second atmosphere adjustment signal is issued to make the atmospheres of the third station 13 and the second station 12 consistent.

[0105] In particular, the continuous chemical vapor deposition apparatus and method mentioned in the present disclosure can be used to deposit silicon carbide and its derivatives, such as silicon carbide rings, silicon carbide rods, silicon carbide sheets, and many other types of silicon carbide products.

[0106] The various positioning signals mentioned above, as well as the signal for the first reaction vessel 4 to be removed from the third station 13, can be signals sent to the controller after confirming the position of the reaction vessel 4 through various sensors such as pressure sensors, laser sensors, and visual sensors. The deposition reaction completion signal can be sent by the industrial computer that controls the deposition process. Typically, the completion of the deposition reaction can be determined by a predetermined program, a preset deposition time, or confirmation of the thickness / weight change of the deposition. The heat treatment completion signal can also be obtained by the preset time of the heat treatment process, the execution result of the heat treatment program, etc. The generation and transmission of these signals themselves belong to the prior art and do not need to be limited in this patent.

[0107] In order to realize the switching of the reaction container 4 between various stations, as a feasible implementation method, the present disclosure also proposes further improvements to the chemical vapor deposition equipment, and the improvements are: Figure 7 As shown, the transmission device 2 includes:

[0108] Guide rail 21 and push-pull device;

[0109] The reaction container 4 is disposed on the guide rail 21 , and the push-pull device is used to push the reaction container 4 along the guide rail 21 to switch positions among the first station 11 , the second station 12 and the third station 13 .

[0110] The technical benefits of the guide rails 21 and push-pull mechanism primarily lie in improving the automation and continuity of the production process. By providing the guide rails 21 and push-pull mechanism, the movement and switching of reaction vessels 4 can be easily accomplished. Specifically, this arrangement allows for smooth, rapid, and accurate transfer of reaction vessels 4 between different workstations, reducing the need for manual operation and improving production efficiency and safety.

[0111] Furthermore, the guide rail 21 includes:

[0112] A plurality of rollers 212 are laid out in sequence along the length direction of the guide rail 21 at intervals;

[0113] The fixing member 211 is connected to the roller 212, and the fixing member 211 rotatably fixes both ends of the ball;

[0114] When the reaction container 4 moves on the guide rail 21 , the rollers 212 are used to provide rolling friction.

[0115] Because the rollers 212 and the fixing member 211 are designed for high temperatures, graphite or CMC (ceramic matrix composite) materials can be considered. These materials can withstand temperatures exceeding 1500°C and are superior to high-temperature alloys in terms of heat resistance, oxidation resistance, strength and stiffness, density, and corrosion resistance.

[0116] The multiple rollers 212 and the fixed component 211 that guide rail 21 is provided with make the rolling friction that roller 212 provides provide support for the motion of reaction vessel 4 on track.The rolling friction that roller 212 provides is much smaller than sliding friction, and this helps to reduce energy consumption, makes the movement of reaction vessel 4 more smooth and efficient.Roller 212 is laid at intervals successively along the length direction of track, and this evenly distributed support point can enhance the stability of whole system, reduces the vibration caused by uneven load.Because rolling friction is less than sliding friction to the wear and tear of reaction vessel 4, the service life of reaction vessel 4 can be effectively extended.

[0117] However, see Figure 8 As shown, the push-pull device includes:

[0118] A push-pull driver (not shown) and a push-pull rod provided on the push-pull driver, wherein the push-pull rod is divided into a push rod 22 and a pull rod 23, and the push rod 22 and the pull rod 23 can be detachably connected to opposite sides of the reaction vessel 4;

[0119] The pushing rod 22 and the pulling rod 23 are used to provide a pushing force and a pulling force for the reaction container 4 , respectively, so that the reaction container 4 moves along the guide track 21 .

[0120] The push-pull rod can be driven by various types of power sources capable of linear motion provided by the prior art, such as a gas rod, a hydraulic rod, or a motor, etc. In this embodiment, the type of push-pull driver does not need to be limited.

[0121] Since the push rod 22 and the pull rod 23 can be detachably connected to the two sides of the reaction vessel 4, the reaction vessel 4 can be moved no matter which direction it is blocked. When the first station 11, the second station 12 and the third station 13 are separated, this design can well ensure that the reaction vessel 4 can still move in the required manner. In addition, when it is necessary to close the various spaces within the main device 1, the push-pull rods can be removed from the main device 1. Compared with other types of transmission devices 2 that need to be set within the main device 1, this has less interference with the process and is less likely to be damaged due to large temperature changes.

[0122] For matching purposes, see Figure 7 Combine Figure 8 As shown, the reaction vessel 4 is provided with a quick release device 41 for connecting with the push-pull device;

[0123] The quick release device 41 comprises:

[0124] The connecting cover 411 is mounted on the reaction container 4, and a connecting cavity 413 is formed between the connecting cover 411 and the reaction container 4. The connecting cover 411 is provided with a connecting hole 412 that communicates with the connecting cavity 413.

[0125] The head end of the push-pull rod has a card joint that matches the shape of the connection hole 412. The connection hole 412 is used for the push-pull rod to connect. The push-pull driver can drive the push-pull rod to rotate along its own circumference so that the card joint is inserted into the connecting cavity 413.

[0126] The quick-release device 41 provides the reaction vessel 4 with the push-pull device with the ability to quickly connect and disconnect. The engagement of the snap connector with the connection hole 412 allows for rapid connection and disconnection between the push-pull rod and the reaction vessel 4, significantly improving the device's connection efficiency. Furthermore, the push-pull driver rotates the push-pull rod, allowing the snap connector to engage or disengage the connection cavity 413. This makes the connection operation extremely simple and easily automated. Rapid assembly and disassembly reduces connection time and improves the efficiency of the entire continuous production line.

[0127] Also, see Figure 3As shown, the main body device 1 has a first through hole 111, a second through hole 121 and a third through hole 131 corresponding to the first work station 11, the second work station 12 and the third work station 13 respectively;

[0128] When the reaction container 4 is located at the first station 11, the gas interface 42 faces the first through hole 111;

[0129] When the reaction container 4 is located at the second station 12, the gas interface 42 faces the second through hole 121;

[0130] When the reaction container 4 is located at the third workstation 13 , the gas interface 42 faces the third through hole 131 .

[0131] This technical solution allows the gas port 42 of the reaction vessel 4 to align with the corresponding through-holes when the reaction vessel 4 is moved between different working chambers, thereby achieving precise gas flow control. Specifically, by aligning the gas port 42 with the corresponding through-holes, gas can be ensured to enter the desired working chamber accurately, whether it is the first station 11, the second station 12, or the third station 13.

[0132] In addition, another aspect of the present disclosure provides a computer program that, when executed, can implement the aforementioned method steps. In addition, another aspect of the present disclosure provides a readable storage medium that contains the aforementioned computer program.

[0133] The inventors of the present disclosure have discovered through research that, in the prior art, chemical vapor deposition equipment generally has only one reaction chamber and follows the following process:

[0134] 1. Place the substrate in the reaction chamber;

[0135] 2. Through the gas support device 3, the reaction chamber is evacuated and a mixed gas is introduced to create an atmosphere in the reaction chamber;

[0136] 3. Heating the reaction chamber so that the mixed gas reacts and deposits on the substrate;

[0137] 4. After the deposition is completed, maintain the atmosphere for subsequent heat treatment;

[0138] 5. Slowly lower the temperature of the reaction chamber to room temperature;

[0139] 6. Take out the reaction product.

[0140] It is not difficult to see that the above steps are intermittent. The reaction chamber needs to continuously cycle through a process of heating up and cooling down. Moreover, in steps 1, 5, and 6, the gas support device 3 does not need to supply reaction raw material gas. Steps 1 and 6 even require that the gas in the reaction chamber be replaced with an air environment for operation. These result in the heating device and the gas support device 3 of the reaction chamber not being fully utilized, thus significantly leading to a decrease in productivity. In other words, in the prior art, the main factor restricting the efficiency of silicon carbide materials in the production process of chemical vapor deposition is that the preheating of the reaction, atmosphere setting, and post-heat treatment take up a lot of time.

[0141] Compared with the prior art, the continuous chemical vapor deposition apparatus provided by the present disclosure provides a continuous chemical vapor deposition method, which follows the following process:

[0142] 1. See Figure 4 As shown, one reaction vessel 4 is placed in the first station 11 of the main apparatus 1, and another reaction vessel 4 is placed in the second station 12 of the main apparatus 1. During this process, a fixture can be used to stack substrates for manufacturing silicon carbide materials in the reaction vessels 4. Then, preheating can be performed and a vacuum can be created in the reaction vessels 4 to adjust the pressure difference for subsequent atmosphere synchronization.

[0143] 2. Construct the atmosphere in the first station 11, the second station 12, the reaction vessel 4, and the second station 12 of the main device 1 through the gas support device 3; in this step, the airtightness can be improved by sealing the connection between the first station 11, the second station 12 and the outside world.

[0144] The gas support device 3 supplies reaction gas to the reaction vessel 4 in the second station 12 to perform a chemical vapor deposition reaction. During this step, the main apparatus 1 can heat the reaction vessel 4 to ensure that the reaction gas can fully perform the deposition reaction. Simultaneously or later, the gas support device 3 can also be used to establish an atmosphere in the third station 13 of the main apparatus 1.

[0145] 3. See Figure 5 As shown, after the deposition reaction is completed, the reaction vessel 4 located in the second station 12 is moved to the third station 13 via the conveyor 2; the reaction vessel 4 located in the first station 11 is moved to the second station 12 via the conveyor 2. At this point, the first station 11 is vacant and can accommodate the next reaction vessel 4 for atmosphere preparation and preheating.

[0146] 4. See Figure 6As shown, the gas support device 3 continues to supply reaction gas to the new reaction vessel 4 in the second station 12 to carry out the chemical vapor deposition reaction. At the same time, the reaction product is subjected to a heat treatment or cooling process before shipment to the reaction vessel 4 in the third station 13. Furthermore, additional heat treatments, such as recrystallization, can be performed in the third station 13 to control the resistivity and transmittance of the product.

[0147] It is worth mentioning that since the deposition reaction time is long, while the heat treatment and preparation time is short,

[0148] Therefore, optionally, the third reaction container 4 and the first reaction container 4 are the same reaction container 4. Under the premise of recycling, the number of reaction containers 4 can be saved and the cost can be reduced.

[0149] In addition, optionally, after the step of placing each reaction container 4 at each station, the method further includes:

[0150] Isolate the spatial connections between each workstation to make the atmosphere of each workstation independent;

[0151] The gas support device 3 is docked with the reaction container 4 to provide a reaction atmosphere for the reaction container 4 .

[0152] By isolating the spatial connections between the various workstations, it is possible to ensure that each workstation has an independent atmosphere, which is very important for controlling the conditions of chemical reactions.

[0153] As can be seen from the above process, the continuous chemical vapor deposition equipment disclosed herein can allocate the three production processes of pretreatment, deposition reaction, and heat treatment to different stations by constructing three independent stations, thus achieving continuous production and processing. Due to the provision of a transfer device 2, the reaction vessel 4 can be moved between the three chambers of the first station 11, the second station 12, and the third station 13. This significantly improves convenience.

[0154] Through the above design, the continuous chemical vapor deposition equipment and method provided by the present disclosure can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared to the intermittent equipment and methods of the prior art. When producing a silicon carbide product with the same deposition thickness, it can be used as a batch process. See the table below:

[0155]

[0156] After evaluation and testing, the following conclusions can be drawn:

[0157] Example 1: When producing 1mm products at a deposition rate of 20um / h process conditions, the intermittent chemical vapor deposition equipment can produce 4.7 batches of products per month.

[0158] Example 2: When producing 1mm products at a deposition rate of 20um / h, the continuous chemical vapor deposition equipment can produce 10.0 batches of products per month, and the productivity is increased by 2.1 times.

[0159] Example 3: When producing 1mm products at a deposition rate of 30um / h, the intermittent chemical vapor deposition equipment can produce 5.6 batches of products per month.

[0160] Example 4: When producing 1mm products at a deposition rate of 30um / h, the continuous chemical vapor deposition equipment can produce 15 batches of products per month, and the productivity is increased by 2.7 times.

[0161] In another embodiment of the present disclosure, in response to a second in-position signal of the first reaction vessel 4 at the second station 12, a deposition start signal is issued to start chemical vapor deposition of the first reaction vessel 4 in the second station 12, further comprising:

[0162] In response to a second in-position signal of the first reaction vessel 4 at the second workstation 12, a second docking signal is issued to dock the gas support device 3 with the first reaction vessel 4;

[0163] In response to the docking completion signal between the gas support device 3 and the first reaction container 4 , a deposition start signal is sent to enable the first reaction container 4 to start chemical vapor deposition in the second station 12 .

[0164] By confirming that the docking is complete before starting chemical vapor deposition, the deposition process can be ensured to proceed smoothly.

[0165] Based on this technical solution, see Figure 6 and Figure 9 As shown, the reaction vessel 4 of the continuous chemical vapor deposition apparatus of this embodiment is provided with a gas interface 42; the gas support device 3 is provided beside the main device 1 and includes:

[0166] a gas pipeline and a docking mechanism connected to the gas pipeline (not shown);

[0167] The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container 4 so that the head end of the gas pipeline is connected to or disconnected from the gas interface 42 of the reaction container 4 .

[0168] The docking mechanism can also utilize various types of linear motion power sources available in the prior art, such as pneumatic rods, hydraulic rods, or motors, to propel the gas pipeline. In this embodiment, the type of docking mechanism is also not limited. As long as the docking mechanism can automatically drive the gas pipeline to achieve docking, the technical objectives of this embodiment can be achieved. It is worth mentioning that even manual docking can still substantially achieve the technical objectives of this disclosure.

[0169] Furthermore, the inner diameter of the outermost portion of the gas interface 42 may gradually decrease from the outside to the inside, thereby guiding the gas pipeline and avoiding deviation during docking.

[0170] The docking mechanism can move the gas pipeline toward or away from the reaction vessel 4, allowing for flexible connection and disconnection between the head end of the gas pipeline and the gas interface 42 of the reaction vessel 4 as needed. Automated control of the docking mechanism reduces manual operation and improves operational accuracy and repeatability. Automated connection and disconnection reduces the risk of gas leakage caused by improper operation. Rapid connection and disconnection saves time and improves overall system efficiency.

[0171] It is worth mentioning that, according to actual needs, the reaction vessel 4 can not only be docked at the second station 12, but also at the first station 11 and the third station 13, it can also be docked with the gas support device 3. In other words, when the reaction vessel 4 is located at any station, it can create the required reaction atmosphere by docking with the gas support device 3. This makes the continuous chemical vapor deposition system provided by this patent more flexible and adaptable to different types of chemical vapor deposition reactions.

[0172] In another embodiment of the present disclosure, in response to a deposition reaction completion signal, a second movement signal is issued to move the first reaction container 4 after the reaction is completed to the third station 13, and to move the second reaction container 4 to the second station 12, further comprising:

[0173] In response to a deposition reaction completion signal, opening passages between the various workstations;

[0174] In response to the channel opening signal, a second moving signal is issued to move the first reaction container 4 after the reaction is completed to the third station 13, and the second reaction container 4 is moved to the second station 12;

[0175] In response to the second positioning signal of the second reaction container 4 at the second workstation 12, a channel closing signal is issued to close the channels between the various workstations.

[0176] Based on this technical solution, see Figure 3 、 Figure 8 and Figure 10 As shown, the continuous chemical vapor deposition apparatus of this embodiment further includes:

[0177] The gate valve device 5 is disposed in the main device 1 and is located on both sides of the second workstation 12 , and is used to separate the second workstation 12 from the first workstation 11 and / or the third workstation 13 .

[0178] By means of the gate valve device 5 , the flow of fluid can be effectively controlled and managed, thereby ensuring effective isolation between the second workstation 12 and the first and third workstations 11 and 13 .

[0179] Specifically, the gate valve device 5 includes:

[0180] The gate 51 and the lifting drive 52 connected thereto;

[0181] The bottom of the gate 51 matches the shape of the roller 212 . The lifting driver 52 is used to drive the gate 51 to move up and down, and when the gate 51 descends, the gate 51 is engaged with the roller 212 .

[0182] The gate valve assembly 5 effectively isolates the second workstation 12 from the first and third workstations 11 and 13, helping to maintain independent environments within each chamber, preventing heat dissipation and mixing of gases or other media. The gate 51, controlled by a lift actuator 52, precisely manages fluid flow and enables fine-tuning of the chemical reaction process. Furthermore, the coordinated design of the gate 51 and roller 212 enhances its airtightness, providing a more effective barrier.

[0183] The gate valve device 5 can be made of materials such as ceramics and CMC to ensure its high temperature resistance. A heat insulation layer made of CMC material can be provided on the gate 51 to isolate the heat between the chambers.

[0184] Finally, it should be noted that those skilled in the art will appreciate that, in order to better understand the present disclosure, the embodiments of the present disclosure provide numerous technical details. However, even without these technical details and the various variations and modifications based on the above-described embodiments, the technical solutions claimed in the claims of the present disclosure can be substantially achieved. Therefore, in actual applications, various changes in form and detail may be made to the above-described embodiments without departing from the spirit and scope of the present disclosure.

Claims

1. A continuous chemical vapor deposition method, characterized in that: The steps include: A first reaction container provided with a substrate is arranged at a second station (12); in the second station (12), a gas interface (42) provided on the first reaction container is docked with a through hole corresponding to the second station (12); a gas support device (3) supplies a reaction atmosphere into the first reaction container to perform a chemical vapor deposition reaction; The second reaction container provided with the substrate is arranged at the first station (11), and the atmosphere of the third station (13) and the first station (11) is adjusted to be consistent with that of the second station (12); The first reaction container after the reaction is completed is moved to the third station (13), and then the second reaction container is moved to the second station (12). In the second station (12), the gas interface (42) provided on the second reaction container is docked with the through hole corresponding to the second station (12), and the reaction atmosphere is supplied to the second reaction container by the gas support device (3) to carry out the chemical vapor deposition reaction.

2. The method according to claim 1, characterized in that After the step of moving the first reaction container after the reaction is completed to the third station (13), the method further includes: heat-treating the first reaction container located at the third station (13), and then lowering the temperature of the third station (13) to room temperature; Adjusting the atmosphere of the third workstation (13) to be consistent with the external environment; taking out the first reaction container and the reaction product in the first reaction container; placing a substrate in a third reaction vessel; After the step of moving the second reaction container to the second station (12), the method further comprises: Adjusting the atmosphere of the first workstation (11) to be consistent with the external environment; The third reaction container is placed in the first station (11) to circulate.

3. The method according to claim 2, characterized in that The third reaction container and the first reaction container are the same reaction container.

4. The method according to claim 1, wherein After the steps of placing the reaction containers at the respective workstations, the method further includes: Isolate the spatial connections between each workstation to make the atmosphere of each workstation independent; The gas support device (3) is docked with the set reaction container to provide a reaction atmosphere for the reaction container.

5. A method for controlling continuous chemical vapor deposition, characterized in that: include: In response to a second positioning signal of the first reaction container at the second workstation (12), a second docking signal is issued to dock the gas support device (3) with the gas interface (42) provided on the first reaction container; In response to a signal indicating that the gas support device (3) and the first reaction container have completed docking, a deposition start signal is issued to cause the first reaction container to begin chemical vapor deposition in the second station (12); In response to a first positioning signal of the second reaction container at the first station (11), a first atmosphere adjustment signal is issued to make the atmospheres of the first station (11) and the second station (12) consistent; In response to a deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station (13), and to move the second reaction container to the second station (12).

6. The method according to claim 5, characterized in that Also includes: In response to a third in-position signal indicating that the first reaction container is at a third workstation (13), a heat treatment signal is issued to perform heat treatment on the first reaction container; In response to a heat treatment completion signal of the third station (13), a restoration signal is issued to reduce the temperature of the third station (13) to room temperature, and adjust the atmosphere of the third station (13) to be consistent with the external environment; In response to a signal for removing the first reaction container from the third station (13), a second atmosphere adjustment signal is issued to make the atmospheres of the third station (13) and the second station (12) consistent.

7. The method according to claim 6, characterized in that Also includes: In response to a first positioning signal of the third reaction container at the first station (11), a first atmosphere adjustment signal is issued to make the atmospheres of the first station (11) and the second station (12) consistent; In response to a third positioning signal indicating that the first reaction container is at the third station (13), a first moving signal is issued to move the third reaction container to the second station (12).

8. The method according to claim 5, characterized in that In response to the deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station (13), and to move the second reaction container to the second station (12), and further includes: In response to a deposition reaction completion signal, opening passages between the various workstations; In response to the channel opening signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station (13), and to move the second reaction container to the second station (12); In response to a second positioning signal of the second reaction container at the second workstation (12), a channel closing signal is issued to close the channels between the various workstations.

9. The method according to any one of claims 1 to 8, characterized in that The method is used to deposit silicon carbide and its derivatives.

10. A computer program, characterized in that When the computer program is executed, it is capable of implementing the method steps according to any one of claims 5 to 9.

11. A readable storage medium having the computer program according to claim 10 stored therein.

12. A continuous chemical vapor deposition system, characterized in that: include: A main body device (1) has a first workstation (11), a second workstation (12) and a third workstation (13); a first through hole (111), a second through hole (121) and a third through hole (131) are respectively provided on the main body device (1) corresponding to the first workstation (11), the second workstation (12) and the third workstation (13); a first reaction container and a second reaction container; the first reaction container and the second reaction container are both provided with a gas interface (42); when any of the reaction containers is located at any of the workstations, the gas interface (42) thereon can be docked with a through hole corresponding to the workstation to be connected to a gas support device (3); the first reaction container is provided at the second workstation (12), and the second reaction container is provided at the first workstation (11); The controller is configured to: in response to a second in-position signal indicating that the first reaction container is in the second station (12), send a deposition start signal to enable the first reaction container to start chemical vapor deposition in the second station (12); In response to a signal indicating that the second reaction container is in position at the first workstation (11), a first atmosphere adjustment signal is issued to make the atmospheres of the first workstation (11) and the second workstation (12) consistent; In response to a deposition reaction completion signal, a second movement signal is issued to move the first reaction container after the reaction is completed to the third station (13), and to move the second reaction container to the second station (12).

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