Continuous chemical vapor deposition apparatus and method

Abstract

The present disclosure relates to the technical field of chemical vapor deposition, in particular to a continuous chemical vapor deposition apparatus and deposition method. The apparatus comprises a main device and a transmission device arranged in the main device, the main device has a preparation chamber, a reaction chamber and a heat treatment chamber connected in sequence through the transmission device; a gas supporting device connected with the main device for providing a gas environment for the main device; a reaction container capable of being arranged in the main device and switching positions between the preparation chamber, the reaction chamber and the heat treatment chamber under the driving of the transmission device, the gas supporting device can be connected with the reaction container in any one of the preparation chamber, the reaction chamber and the heat treatment chamber, and provide a corresponding gas environment for the reaction container. The continuous chemical vapor deposition apparatus and deposition method of the present disclosure can provide production efficiency of deposition products.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of chemical vapor deposition, in particular to a continuous chemical vapor deposition device and a continuous chemical vapor deposition method. BACKGROUND

[0002] Silicon carbide is a representative ceramic material, which is widely used in various industrial fields due to its excellent physical, chemical and electrical properties.

[0003] In recent years, with the active development of semiconductor processing components using silicon carbide materials, the importance of silicon carbide materials has been increasing. In particular, silicon carbide materials are widely used as components for etching processes in semiconductor process components due to their high plasma resistance.

[0004] The silicon carbide material used for semiconductor etching process components is a traditional method of manufacturing silicon carbide. Since the quality and performance cannot be met with this method, in the prior art, chemical vapor deposition is often used for manufacturing.

[0005] In the process of chemical vapor deposition of silicon carbide, a mixture of Si-containing gas such as SiH4, SiCl2, SiCl4 and C-containing gas such as C2H2, CH4, C3H8, etc. is used as raw gas, or a single gas such as CH3SiCl3, CH3SiH3, (CH3)3SiH) is used as raw material for deposition. In the prior art, the silicon carbide material manufactured by chemical vapor deposition has excellent quality, but the production rate is low. SUMMARY

[0006] In order to solve or at least partially solve the above technical problems, the present disclosure provides a continuous chemical vapor deposition device and a deposition method.

[0007] The continuous chemical vapor deposition device provided by the present disclosure comprises:

[0008] A main device and a conveying device arranged in the main device, the main device having a preparation chamber, a reaction chamber and a heat treatment chamber connected in sequence by the conveying device;

[0009] A gas supporting device connected with the main device for providing a gas environment for the main device;

[0010] A reaction container capable of being arranged in the main device and being switched between the preparation chamber, the reaction chamber and the heat treatment chamber under the driving of the conveying device, the gas supporting device being capable of being connected with the reaction container in any one of the preparation chamber, the reaction chamber and the heat treatment chamber and providing a corresponding gas environment for the reaction container.

[0011] Optionally, the reaction container is at least two;

[0012] One reaction container is arranged in the reaction chamber for chemical vapor deposition, and another reaction container is arranged in the preparation chamber;

[0013] The conveying device is used for moving the reaction container completing the deposition operation from the reaction chamber to the heat treatment chamber;

[0014] The conveying device is also used for moving the reaction container completing the preparation operation from the preparation chamber to the reaction chamber.

[0015] Optionally, the conveying device comprises:

[0016] The guide track and the push-pull device;

[0017] The reaction container is arranged on the guide track, and the push-pull device is used for pushing the reaction container along the guide track to switch positions among the preparation chamber, the reaction chamber and the heat treatment chamber.

[0018] Optionally, the guide track comprises:

[0019] A plurality of rollers are sequentially and spacedly arranged along the length direction of the guide track;

[0020] A fixing component is connected with the roller, and the fixing component rotatably fixes both ends of the roller;

[0021] When the reaction container moves on the guide track, the roller is used for providing rolling friction.

[0022] Optionally, the push-pull device comprises:

[0023] A push-pull driver and a push-pull rod arranged on the push-pull driver, the push-pull rod is divided into a pushing rod and a pulling rod, and the pushing rod and the pulling rod can be respectively detachably connected to opposite sides of the reaction container;

[0024] The pushing rod and the pulling rod are respectively used for providing a pushing force and a pulling force to the reaction container to move the reaction container along the guide track.

[0025] Optionally, a quick release device is arranged on the reaction container and used for connecting with the push-pull device;

[0026] The quick release device comprises:

[0027] A connecting cover is mounted on the reaction container and forms a connecting cavity between the connecting cover and the reaction container, and the connecting cover is provided with a connecting hole in communication with the connecting cavity;

[0028] A clamping head of the push-pull rod has a clamping joint matched with the connecting hole, the connecting hole is used for allowing the push-pull rod to enter, and the push-pull driver can drive the push-pull rod to rotate along the circumferential direction of the push-pull rod to allow the clamping joint to be clamped into the connecting cavity.

[0029] Optionally, the method further comprises:

[0030] gate valve devices are arranged in the main body device and are located on both sides of the reaction chamber, for separating the reaction chamber from the preparation chamber and / or the heat treatment chamber.

[0031] Optionally, the gate valve device comprises:

[0032] a gate and a lifting driver connected to the gate;

[0033] the bottom of the gate is matched with the shape of the roller, and the lifting driver is used to drive the gate to lift and to make the gate fit into the roller when the gate is lowered.

[0034] Optionally, a gas interface is arranged on the reaction container; and a gas supporting device is arranged beside the main body device and comprises:

[0035] a gas pipeline and a docking mechanism connected to the gas pipeline;

[0036] the docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container, so as to connect or disconnect the head end of the gas pipeline with the gas interface of the reaction container.

[0037] Optionally, the inner diameter of the outermost part of the gas interface gradually decreases from outside to inside, so as to guide the gas pipeline.

[0038] Optionally, the main body device has a first through hole, a second through hole and a third through hole corresponding to the preparation chamber, the reaction chamber and the heat treatment chamber respectively;

[0039] when the reaction container is located in the preparation chamber, the gas interface is directly opposite to the first through hole;

[0040] when the reaction container is located in the reaction chamber, the gas interface is directly opposite to the second through hole;

[0041] when the reaction container is located in the heat treatment chamber, the gas interface is directly opposite to the third through hole.

[0042] Optionally, the continuous chemical vapor deposition device is used for depositing silicon carbide and its derivatives.

[0043] The disclosure also provides a continuous chemical vapor deposition method, which is applied to the continuous chemical vapor deposition device described above and comprises the following steps:

[0044] arranging the reaction container in the preparation chamber of the main body device;

[0045] constructing the atmosphere in the preparation chamber and the reaction chamber of the main body device by the gas supporting device;

[0046] moving the reaction container into the reaction chamber by the transmission device;

[0047] The reaction vessel is supplied with reaction gas by the gas supply device to perform a chemical vapor deposition reaction.

[0048] The atmosphere in the heat treatment chamber of the main body device is constructed by the gas supply device.

[0049] After the reaction is completed, the reaction vessel is moved to the heat treatment chamber by the transfer device to perform a heat treatment or a cooling treatment.

[0050] After the reaction vessel is moved into the reaction chamber by the transfer device, the following steps are further included:

[0051] Another reaction vessel is arranged in the preparation chamber.

[0052] After the reaction vessel is moved to the heat treatment chamber, the following steps are further included:

[0053] Another reaction vessel is moved into the reaction chamber by the transfer device.

[0054] The reaction vessel is supplied with reaction gas by the gas supply device to perform a chemical vapor deposition reaction.

[0055] Compared with the prior art, the continuous chemical vapor deposition device of the present disclosure can distribute the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent preparation chamber and heat treatment chamber, realizing continuous production and processing. Since the transfer device is arranged, the reaction vessel can be moved between the preparation chamber, the reaction chamber and the heat treatment chamber. This significantly improves the convenience. Through the above design, the continuous chemical vapor deposition device and method provided by the present disclosure can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared with the intermittent device and method of the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0056] In order to more clearly illustrate the embodiments of the present disclosure, the related drawings will be briefly introduced below. It can be understood that the drawings described below are only used to illustrate some embodiments of the present disclosure, and those skilled in the art can also obtain many other technical features and connection relationships not mentioned in the text from these drawings.

[0057] Figure 1 is a schematic perspective view of a continuous chemical vapor deposition device according to an embodiment of the present disclosure;

[0058] Figure 2 is a schematic longitudinal sectional view of a continuous chemical vapor deposition device according to an embodiment of the present disclosure;

[0059] Figure 3FIG. 1 is a longitudinal sectional view of a continuous chemical vapor deposition apparatus according to an embodiment of the present disclosure;

[0060] Figure 4 FIG. 2 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when an atmosphere is built in a preparation chamber;

[0061] Figure 5 FIG. 3 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when a reaction vessel is moved from the preparation chamber to a reaction chamber;

[0062] Figure 6 FIG. 4 is a horizontal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when a chemical vapor deposition operation is performed;

[0063] Figure 7 FIG. 5 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when the chemical vapor deposition operation is performed;

[0064] Figure 8 FIG. 6 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when the reaction vessel is moved from the reaction chamber to a heat treatment chamber;

[0065] Figure 9 FIG. 7 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when two reaction vessels are provided and the two reaction vessels are located in the preparation chamber and the reaction chamber, respectively;

[0066] Figure 10 FIG. 8 is a longitudinal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when two reaction vessels are provided and the two reaction vessels are located in the reaction chamber and the heat treatment chamber, respectively;

[0067] Figure 11 FIG. 9 is a perspective view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when a part of a shield is removed to expose a reaction vessel;

[0068] Figure 12 FIG. 10 is a horizontal sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure when a gate valve is opened;

[0069] Figure 13 FIG. 11 is a partially enlarged sectional view of the continuous chemical vapor deposition apparatus according to the embodiment of the present disclosure near a gas interface.

[0070] BRIEF DESCRIPTION OF THE DRAWINGS

[0071] 1, main body device; 11, preparation chamber; 111, first through hole; 12, reaction chamber; 121, second through hole; 13, heat treatment chamber; 131, third through hole; 2, transmission device; 21, guide rail; 211, fixed part; 212, roller; 22, push rod; 23, pull rod; 3, gas supporting device; 4, reaction container; 41, quick release device; 411, connecting cover; 412, connecting hole; 413, connecting cavity; 42, gas interface; 5, gate valve device; 51, gate; 52, lifting driver. DETAILED DESCRIPTION

[0072] In the prior art, a chemical vapor deposition device usually has a reaction chamber, and a gas supporting device is connected to the reaction chamber. The gas supporting device mixes raw materials used in the process with other process gases and supplies the mixed gases in the form of gas phase to the reactor under the premise of meeting the process conditions. The reactor performs thermal decomposition on the supplied mixed gases under high temperature and constant atmosphere. And silicon carbide is deposited on the substrate previously arranged in the reaction chamber. The gas supporting device often also includes an exhaust mechanism for exhausting by-products and excess mixed gases generated in the chemical vapor deposition process.

[0073] In the prior art, the silicon carbide material manufactured by chemical vapor deposition has excellent quality, but the production rate is low. In view of this, the inventors of the present disclosure provide a continuous chemical vapor deposition device and related method to solve the above problems.

[0074] Several specific embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0075] One embodiment of the present disclosure provides a continuous chemical vapor deposition device, as shown in Figure 1 It includes:

[0076] The main body device 1 and the transmission device 2 arranged in the main body device 1, the main body device 1 has a preparation chamber 11, a reaction chamber 12 and a heat treatment chamber 13 connected in sequence by the transmission device 2;

[0077] The gas supporting device 3 is connected with the main body device 1, and is used to provide a gas environment for the main body device 1.

[0078] As shown in Figure 2 It also includes a reaction container 4, which can be arranged in the main body device 1 and switched between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 under the driving of the transmission device 2. The gas supporting device 3 can be connected with the reaction container 4 in any one of the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13, and provide a corresponding gas environment for the reaction container 4.

[0079] In the three spaces of the main body device 1:

[0080] The preparation chamber 11 is used to fix and mount the substrate by using a clamp, and to prepare for the chemical vapor deposition process under the premise of matching the required production quantity.

[0081] The reaction chamber 12 is similar to the conventional chemical vapor deposition equipment.

[0082] The heat treatment chamber 13 can perform heat treatment on the chemical vapor deposition products such as silicon carbide, so as to control and improve the purity level of the products. The heat treatment chamber 13 also facilitates rapid harvesting of the products after heat treatment. The gas support device 3 can provide the required gas for the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. The gas support device 3 can also include an exhaust mechanism capable of being vacuumed.

[0083] In particular, the continuous chemical vapor deposition equipment and the method thereof mentioned in the present disclosure can be used for depositing silicon carbide and its derivatives, such as silicon carbide rings, silicon carbide rods, silicon carbide sheets and many other types of silicon carbide products.

[0084] The inventors of the present disclosure found through research that in the prior art, the chemical vapor deposition equipment generally only has one reaction chamber 12 and follows the following process:

[0085] 1. The substrate is placed in the reaction chamber 12;

[0086] 2. The reaction chamber 12 is vacuumed and mixed gas is fed into the reaction chamber 12 by the gas support device 3, so as to build the atmosphere in the reaction chamber 12;

[0087] 3. The reaction chamber 12 is heated, so that the mixed gas reacts and deposits on the substrate;

[0088] 4. After the deposition is completed, the atmosphere is maintained for subsequent heat treatment;

[0089] 5. The temperature of the reaction chamber 12 is slowly lowered to room temperature;

[0090] 6. The reaction product is taken out.

[0091] It is not difficult to see that the above steps are intermittent. The reaction chamber 12 needs to be continuously cycled through the heating and cooling process. Moreover, in the first, fifth and sixth steps, the gas support device 3 does not need to supply the reaction raw gas, and in the first and sixth steps, it is even required to replace the gas in the reaction chamber 12 with an air environment for operation. These cause the heating device of the reaction chamber 12 and the gas support device 3 to be unable to be fully utilized for the whole period, thus significantly leading to a decrease in production rate. That is, in the prior art, the main factor that restricts the efficiency of the production process of the silicon carbide material in the chemical vapor deposition is that the preheating of the reaction, the atmosphere setting and the post-heat treatment occupy a large amount of time.

[0092] In comparison with the prior art, the continuous chemical vapor deposition apparatus according to the present disclosure provides a continuous chemical vapor deposition method that follows the following processes:

[0093] 1. As shown in FIG. 1, the reaction vessel 4 is set in the preparation chamber 11 of the main device 1. In this process, the substrates for manufacturing silicon carbide material can be stacked by using a jig. Then, preheating can be performed, and a vacuum can be created in the reaction vessel 4 to adjust the pressure difference, so that subsequent atmosphere synchronization can be performed. Figure 3 2. As shown in FIG. 2, the atmosphere in the preparation chamber 11 and the reaction vessel 4 and the reaction chamber 12 of the main device 1 is constructed by the gas support device 3; in this step, the gas tightness can be improved by closing the connection between the preparation chamber 11, the reaction chamber 12, and the outside.

[0094] Figure 4 3. As shown in FIG. 3, the reaction vessel 4 is moved into the reaction chamber 12 by the transport device 2; at this time, the preparation chamber 11 is emptied, and the next reaction vessel 4 can enter and perform atmosphere preparation and preheating.

[0095] 4. As shown in FIG. 4, the reaction vessel 4 is supplied with reaction gas by the gas support device 3 to perform a chemical vapor deposition reaction; in this step, the reaction vessel 4 can be heated by the main device 1 so that the reaction gas can fully perform the deposition reaction. Figure 5 5. At the same time or after the deposition reaction, as shown in FIG. 5, the atmosphere in the heat treatment chamber 13 of the main device 1 can also be constructed synchronously by the gas support device 3;

[0096] Figure 6 6. After the reaction is completed, as shown in FIG. 6, the reaction vessel 4 is moved to the heat treatment chamber 13 by the transport device 2 to perform a pre-shipment heat treatment or cooling process of the reaction product. In addition, some additional heat treatment, such as recrystallization, can also be performed in the heat treatment chamber 13 to control the resistivity and light transmittance of the product. During the heat treatment process, the reaction chamber 12 is emptied, and the next reaction vessel 4 can enter to perform a chemical vapor deposition reaction.

[0097] Figure 7

[0098] 6. After the reaction is completed, as shown in FIG. 6, the reaction vessel 4 is moved to the heat treatment chamber 13 by the transport device 2 to perform a pre-shipment heat treatment or cooling process of the reaction product. In addition, some additional heat treatment, such as recrystallization, can also be performed in the heat treatment chamber 13 to control the resistivity and light transmittance of the product. During the heat treatment process, the reaction chamber 12 is emptied, and the next reaction vessel 4 can enter to perform a chemical vapor deposition reaction. Figure 8

[0099] ​​​​​As can be seen from the above process, the continuous chemical vapor deposition apparatus of the present disclosure can distribute the three production processes of pretreatment, deposition reaction and heat treatment to different stations by constructing independent preparation chamber 11 and heat treatment chamber 13, thereby realizing continuous production and processing. Since the transmission device 2 is provided, the reaction container 4 can be moved between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13. This significantly improves the convenience. In particular, referring to Figure 9 As shown, the reaction container 4 can be at least two;

[0100] One reaction container 4 is arranged in the reaction chamber 12 to perform chemical vapor deposition, and another reaction container 4 is arranged in the preparation chamber 11;

[0101] Referring to Figure 10 As shown, the transmission device 2 is used to move the reaction container 4 that has completed the deposition operation from the reaction chamber 12 to the heat treatment chamber 13;

[0102] The transmission device 2 is also used to move the reaction container 4 that has completed the preparation operation from the preparation chamber 11 to the reaction chamber 12.

[0103] Based on the above improvements, the present embodiment further provides a continuous chemical vapor deposition method, which follows the following process:

[0104] After the aforementioned step of moving the reaction container 4 into the reaction chamber 12 by the transmission device 2, the following step is further included:

[0105] Referring to Figure 9 As shown, another reaction container 4 is arranged in the preparation chamber 11;

[0106] After the step of moving the reaction container 4 into the heat treatment chamber 13, the following step is further included:

[0107] Referring to Figure 10 As shown, another reaction container 4 is moved into the reaction chamber 12 by the transmission device 2;

[0108] Referring to Figure 6 As shown, the reaction gas is supplied to another reaction container 4 by the gas supporting device 3 to perform a chemical vapor deposition reaction.

[0109] Through the above design, the continuous chemical vapor deposition apparatus and method provided by the present disclosure can significantly improve the production efficiency of semiconductor materials in the field of chemical vapor deposition compared to the intermittent apparatus and method of the prior art. When producing a silicon carbide product with the same deposition thickness, it can be used as a batch process. Please see the following table:

[0110]

[0111] After evaluation and testing, the following conclusions can be drawn:

[0112] Example 1: When the deposition rate is 20 um / h and the product is 1 mm, the batch production of the product by the batch chemical vapor deposition equipment is 4.7 per month.

[0113] Example 2: When the deposition rate is 20 um / h and the product is 1 mm, the batch production of the product by the continuous chemical vapor deposition equipment is 10.0 per month, and the production rate is increased by 2.1 times.

[0114] Example 3: When the deposition rate is 30 um / h and the product is 1 mm, the batch production of the product by the batch chemical vapor deposition equipment is 5.6 per month.

[0115] Example 4: When the deposition rate is 30 um / h and the product is 1 mm, the batch production of the product by the continuous chemical vapor deposition equipment is 15 per month, and the production rate is increased by 2.7 times.

[0116] In another embodiment of the present disclosure, further improvements are made to the aforementioned continuous chemical vapor deposition equipment, which are characterized in that: Figure 11 As shown in the figure, the conveying device 2 comprises:

[0117] a guide rail 21 and a push-pull device;

[0118] The reaction container 4 is arranged on the guide rail 21, and the push-pull device is used to push the reaction container 4 along the guide rail 21 to switch positions between the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13.

[0119] The technical effect of the guide rail 21 and the push-pull device mainly lies in improving the automation and continuity of the production process. By arranging the guide rail 21 and the push-pull device, the movement and switching of the reaction container 4 can be easily realized. Specifically, this arrangement allows the reaction container 4 to be smoothly, quickly and accurately transferred between different working chambers, thereby reducing the need for manual operation and improving production efficiency and safety.

[0120] Further, the guide rail 21 comprises:

[0121] a plurality of rollers 212 arranged in sequence along the length direction of the guide rail 21;

[0122] a fixing component 211 connected with the rollers 212, and the fixing component 211 rotatably fixes both ends of the rollers 212;

[0123] When the reaction container 4 moves on the guide rail 21, the rollers 212 are used to provide rolling friction.

[0124] Due to the high temperature at which the rollers 212 and the fixed parts 211 are arranged, graphite or CMC (ceramic matrix composite) materials can be considered. Such materials can withstand high temperatures of over 1500°C and are superior to high-temperature alloys in terms of high-temperature resistance, oxidation resistance, strength and rigidity, density, corrosion resistance, etc.

[0125] The plurality of rollers 212 and the fixed parts 211 arranged along the guide track 21 are such that the rolling friction provided by the rollers 212 can support the movement of the reaction vessel 4 on the track. The rolling friction provided by the rollers 212 is much smaller than the sliding friction, which helps to reduce energy consumption and makes the movement of the reaction vessel 4 smoother and more efficient. The rollers 212 are arranged in sequence along the length direction of the track, and the uniformly distributed support points can enhance the stability of the entire system and reduce vibrations caused by uneven loads. Since the rolling friction is less abrasive to the reaction vessel 4 than the sliding friction, the service life of the reaction vessel 4 can be effectively prolonged.

[0126] Referring to Figure 2 , the push-pull device comprises:

[0127] A push-pull driver (not shown in the figure) and a push-pull rod arranged on the push-pull driver, the push-pull rod being divided into a pushing rod 22 and a pulling rod 23, the pushing rod 22 and the pulling rod 23 being respectively detachably connected to the opposite sides of the reaction vessel 4;

[0128] The pushing rod 22 and the pulling rod 23 are respectively used to provide a pushing force and a pulling force for the reaction vessel 4, so as to move the reaction vessel 4 along the guide track 21.

[0129] The push-pull rod can be pushed by various types of power sources capable of providing linear motion provided by the prior art, such as air rods, hydraulic rods or motors, etc. In the present embodiment, the type of push-pull driver is not limited.

[0130] Since the pushing rod 22 and the pulling rod 23 can be respectively detachably connected to the two sides of the reaction vessel 4, the reaction vessel 4 can be moved regardless of which direction is blocked. When the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 are separated, this design can well ensure that the reaction vessel 4 can still move in the required manner. In addition, when it is necessary to close each space within the main body device 1, the push-pull rod can be removed from the main body device 1, which is less likely to interfere with the process and is less likely to be damaged due to large temperature changes compared to other types of transmission devices 2 that need to be arranged within the main body device 1.

[0131] In cooperation therewith, referring to Figure 2 in combination Figure 11As shown, the reaction container 4 is provided with a quick release device 41 for connecting with the push-pull device;

[0132] The quick release device 41 comprises:

[0133] A connecting cover 411 is mounted on the reaction container 4 and forms a connecting cavity 413 between the connecting cover 411 and the reaction container 4, and the connecting cover 411 is provided with an interface hole 412 communicating with the connecting cavity 413;

[0134] The head end of the push-pull rod has a clamping head matched with the shape of the interface hole 412, and the interface hole 412 is used for the push-pull rod to access, and the push-pull driver can drive the push-pull rod to rotate along the circumference of the push-pull rod to make the clamping head clamp into the connecting cavity 413.

[0135] The quick release device 41 provides the reaction container 4 with the quick connection and separation capability with the push-pull device. Through the cooperation of the clamping head and the interface hole 412, the quick connection and separation of the push-pull rod and the reaction container 4 can be realized, which greatly improves the connection efficiency of the device. Moreover, the push-pull driver drives the push-pull rod to rotate, so that the clamping head can be clamped into or out of the connecting cavity 413, and the connection operation is very simple and can be easily operated in an automated manner. The quick disassembly and assembly shorten the time required for connection and improve the operation efficiency of the entire continuous production line.

[0136] In another embodiment of the present disclosure, referring to Figure 1 、 Figure 2 The main device 1 further comprises:

[0137] A gate valve device 5 is arranged in the main device 1 and located on both sides of the reaction chamber 12, for separating the reaction chamber 12 from the preparation chamber 11 and / or the heat treatment chamber 13.

[0138] Through the arrangement of the gate valve device 5, the fluid flow can be effectively controlled and managed, and the effective separation between the reaction chamber 12 and the preparation chamber 11 and the heat treatment chamber 13 can be ensured.

[0139] Specifically, referring to Figure 12 The gate valve device 5 comprises:

[0140] A gate 51 and a lifting driver 52 connected thereto;

[0141] Referring to Figure 4 The bottom of the gate 51 is matched with the shape of the roller 212, and the lifting driver 52 is used to drive the gate 51 to lift and make the gate 51 fit with the roller 212 when the gate 51 is lowered.

[0142] The gate valve assembly 5 effectively isolates the reaction chamber 12 from the preparation chamber 11 and the heat treatment chamber 13. This helps maintain the independent environments within each chamber, preventing heat dissipation and the mixing of gases or other media. The gate 51, controlled by a lift actuator 52, raises and lowers, allowing precise control of fluid flow and fine-tuning of the chemical reaction process. Furthermore, the coordinated design of the gate 51 and roller 212 enhances its airtightness, providing a more effective barrier.

[0143] The gate valve device 5 can be made of materials such as ceramics and CMC to ensure its high temperature resistance. A heat insulation layer made of CMC material can be provided on the gate 51 to isolate the heat between the chambers.

[0144] In another embodiment of the present disclosure, see Figure 6 、 Figure 12 and Figure 13 As shown, the reaction vessel 4 is provided with a gas interface 42; the gas support device 3 is provided beside the main device 1 and includes:

[0145] a gas pipeline and a docking mechanism connected to the gas pipeline (not shown);

[0146] The docking mechanism is used to drive the gas pipeline to approach or move away from the reaction container 4 so that the head end of the gas pipeline is connected to or disconnected from the gas interface 42 of the reaction container 4 .

[0147] The docking mechanism can also utilize various types of linear motion power sources available in the prior art, such as pneumatic rods, hydraulic rods, or motors, to propel the gas pipeline. In this embodiment, the type of docking mechanism is also not limited. As long as the docking mechanism can automatically drive the gas pipeline to achieve docking, the technical objectives of this embodiment can be achieved. It is worth mentioning that even manual docking can still substantially achieve the technical objectives of this disclosure.

[0148] Further, see Figure 13 As shown, the inner diameter of the outermost portion of the gas interface 42 gradually decreases from the outside to the inside, thereby guiding the gas pipeline and avoiding deviation during docking.

[0149] The docking mechanism can move the gas pipeline toward or away from the reaction vessel 4, allowing for flexible connection and disconnection between the head end of the gas pipeline and the gas interface 42 of the reaction vessel 4 as needed. Automated control of the docking mechanism reduces manual operation and improves operational accuracy and repeatability. Automated connection and disconnection reduces the risk of gas leakage caused by improper operation. Rapid connection and disconnection saves time and improves overall system efficiency.

[0150] In addition, referring to Figure 1 As shown, the main device 1 has a first through hole 111, a second through hole 121 and a third through hole 131 corresponding to the preparation chamber 11, the reaction chamber 12 and the heat treatment chamber 13 respectively;

[0151] When the reaction container 4 is located in the preparation chamber 11, the gas interface 42 is directly opposite the first through hole 111;

[0152] When the reaction container 4 is located in the reaction chamber 12, the gas interface 42 is directly opposite the second through hole 121;

[0153] When the reaction container 4 is located in the heat treatment chamber 13, the gas interface 42 is directly opposite the third through hole 131.

[0154] The design of this technical solution allows the gas interface 42 of the reaction container 4 to align with the corresponding through hole when moving between different working chambers, thereby achieving precise gas flow control. The specific technical effects include: by aligning the gas interface 42 and the corresponding through hole, it can be ensured that the gas enters the required working chamber accurately and without error, whether it is the preparation chamber 11, the reaction chamber 12 or the heat treatment chamber 13.

[0155] Finally, it should be noted that those skilled in the art can understand that in order to enable the reader to better understand the present disclosure, the embodiments of the present disclosure propose many technical details. However, even without these technical details and various changes and modifications based on the above embodiments, the technical solutions claimed by the claims of the present disclosure can be basically realized. Therefore, in actual applications, various changes can be made to the above embodiments in form and detail without departing from the spirit and scope of the present disclosure.

Claims

1. A continuous chemical vapor deposition apparatus, characterized by, The continuous chemical vapor deposition equipment comprises: a main device (1) and a transmission device (2) arranged in the main device (1), the main device (1) having a separate preparation chamber (11), a reaction chamber (12) and a heat treatment chamber (13) connected in sequence through the transmission device (2); a gas supporting device (3) connected with the main device (1) and used for providing a gas environment for the main device (1); a reaction container (4) capable of being arranged in the main device (1) and switching positions between the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13) under the driving of the transmission device (2), the gas supporting device (3) being capable of being connected with the reaction container (4) in any one of the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13) and providing a corresponding gas environment for the reaction container (4); a gate valve device (5) arranged in the main device (1) and located on both sides of the reaction chamber (12) and used for cutting off the reaction chamber (12) from the preparation chamber (11) and the heat treatment chamber (13); the reaction container (4) is at least two; one of the reaction containers (4) is arranged in the reaction chamber (12) and used for chemical vapor deposition, and the other reaction container (4) is arranged in the preparation chamber (11); the reaction container (4) is provided with a gas interface (42); the gas supporting device (3) is arranged beside the main device (1) and comprises: a gas pipeline and a docking mechanism connected with the gas pipeline; the docking mechanism is used for driving the gas pipeline to approach or move away from the reaction container (4) so as to connect or disconnect the head end of the gas pipeline with the gas interface (42) of the reaction container (4).

2. The continuous chemical vapor deposition equipment according to claim 1, wherein the transmission device (2) is used for moving the reaction container (4) completing a deposition operation from the reaction chamber (12) to the heat treatment chamber (13); the transmission device (2) is also used for moving the reaction container (4) completing a preparation operation from the preparation chamber (11) to the reaction chamber (12).

3. The continuous chemical vapor deposition apparatus according to claim 2, wherein The transmission device (2) comprises: a guide track (21) and a push-pull device; the reaction container (4) is arranged on the guide track (21), and the push-pull device is used for pushing the reaction container (4) along the guide track (21) to switch positions between the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13).

4. The continuous chemical vapor deposition apparatus according to claim 3, wherein The guide track (21) comprises: a plurality of rollers (212) arranged in sequence and spaced apart along the length direction of the guide track (21); a fixing component (211) connected with the rollers (212), the fixing component (211) rotatably fixing both ends of the rollers (212); when the reaction container (4) moves on the guide track (21), the rollers (212) are used for providing rolling friction.

5. The continuous chemical vapor deposition apparatus according to claim 3, wherein The push-pull device comprises: A push-pull driver and a push-pull rod arranged on the push-pull driver, the push-pull rod being divided into a pushing rod (22) and a pulling rod (23), the pushing rod (22) and the pulling rod (23) being detachably connected to opposite sides of the reaction container (4) respectively; The pushing rod (22) and the pulling rod (23) are used to provide pushing force and pulling force for the reaction container (4) respectively, so as to move the reaction container (4) along the guide rail (21).

6. The continuous chemical vapor deposition apparatus according to claim 5, wherein A quick release device (41) is arranged on the reaction container (4) and used to connect with the push-pull device; The quick release device (41) comprises: A connecting cover (411) is arranged on the reaction container (4) and forms a connecting cavity (413) between the connecting cover (411) and the reaction container (4), the connecting cover (411) is provided with a connecting hole (412) in communication with the connecting cavity (413); The head end of the push-pull rod is provided with a clamping head matched with the connecting hole (412), the connecting hole (412) is used for connecting the push-pull rod, and the push-pull driver can drive the push-pull rod to rotate along the circumferential direction of the push-pull rod, so that the clamping head is clamped in the connecting cavity (413).

7. The continuous chemical vapor deposition apparatus according to claim 4, wherein The gate valve device (5) comprises: A gate (51) and a lifting driver (52) connected with the gate (51); The bottom of the gate (51) is matched with the shape of the roller (212), and the lifting driver (52) is used to drive the gate (51) to lift and descend, and when the gate (51) descends, the gate (51) is embedded with the roller (212).

8. The continuous chemical vapor deposition apparatus according to claim 3, wherein The inner diameter of the outermost part of the gas interface (42) gradually decreases from outside to inside, so as to guide the gas pipeline.

9. The continuous chemical vapor deposition apparatus according to claim 8, wherein The main body device (1) is provided with a first through hole (111), a second through hole (121) and a third through hole (131) corresponding to the preparation chamber (11), the reaction chamber (12) and the heat treatment chamber (13) respectively; When the reaction container (4) is located in the preparation chamber (11), the gas interface (42) is opposite to the first through hole (111); When the reaction container (4) is located in the reaction chamber (12), the gas interface (42) is opposite to the second through hole (121); When the reaction container (4) is located in the heat treatment chamber (13), the gas interface (42) is opposite to the third through hole (131).

10. The continuous chemical vapor deposition apparatus according to claim 1, wherein The continuous chemical vapor deposition equipment is used for depositing silicon carbide and its derivatives.

11. A continuous chemical vapor deposition method applied to the continuous chemical vapor deposition apparatus according to any one of claims 1 to 10, characterized by, The steps comprise: The reaction container (4) is arranged in the preparation chamber (11) of the main body device (1); The atmosphere in the preparation chamber (11), the reaction container (4) and the reaction chamber (12) of the main body device (1) is constructed by the gas supporting device (3); The reaction container (4) is moved into the reaction chamber (12) by the transmission device (2); The reaction container (4) is supplied with reaction gas by the gas supporting device (3) to carry out chemical vapor deposition reaction; By means of the gas supply device (3), the atmosphere in the heat treatment chamber (13) of the main device (1) is established; After the reaction is completed, by means of the transport device (2), the reaction container (4) is moved to the heat treatment chamber (13) for heat treatment or cooling treatment.

12. The continuous chemical vapor deposition method according to claim 11, wherein After the step of moving the reaction container (4) into the reaction chamber (12) by means of the transport device (2), the following steps are further included: Another reaction container (4) is arranged in the preparation chamber (11); After the step of moving the reaction container (4) into the heat treatment chamber (13), the following steps are further included: The other reaction container (4) is moved into the reaction chamber (12) by means of the transport device (2); By means of the gas supply device (3), the other reaction container (4) is supplied with reaction gas for chemical vapor deposition reaction.

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