Millimeter wave duplex power splitter based on multilayer metal gap waveguide and its working method

Abstract

The present invention belongs to the technical field of microwave passive devices and discloses a millimeter-wave duplex power divider based on a multi-layer metal gap waveguide and a working method thereof. The millimeter-wave duplex power divider comprises a common channel, a low-frequency filtering power divider, and a high-frequency filtering power divider. The input port of the common channel is used to be connected to an electromagnetic wave signal source, and the output end of the common channel comprises two upper and lower output channels. The first output channel is connected to the input port of the low-frequency filtering power divider, and the second output channel is connected to the input port of the high-frequency filtering power divider. The low-frequency filtering power divider and the high-frequency filtering power divider are stacked one above the other and both adopt a double-layer metal gap waveguide structure. The double-layer metal gap waveguide structure is internally provided with a fourth-order resonant cavity to realize a duplex power dividing function. The present invention realizes the fusion of the functions of the duplexer and the power divider, greatly reduces the loss caused by processing and assembly errors, and realizes low insertion loss and high inter-channel isolation of the duplex power divider.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave passive devices, and in particular relates to a millimeter wave duplex power splitter based on a multi-layer metal gap waveguide and a working method thereof. Background Art

[0002] In recent years, with the development of communication technology, the existing low-frequency communication bands have been largely occupied; in order to meet the high transmission rates required by future communication systems, research on millimeter-wave band devices is imperative; compared with microwave bands, millimeter-wave bands have rich spectrum resources and wider available bandwidth; but at the same time, millimeter waves have weak penetration capabilities, high transmission losses, and are susceptible to environmental interference; if multifunctional millimeter-wave devices are designed and integrated, the loss and size of devices in millimeter-wave communication systems can be greatly reduced.

[0003] In communication systems, the duplexer isolates the transmit signal from the receive signal, allowing the electromagnetic wave signal source and the receiving device to work normally at the same time, realizing duplex communication; the power splitter realizes the distribution and merging of power; currently, the design of the duplexer is mainly based on the bandpass filter, and duplexing is achieved by designing a common port to connect two bandpass filters of different frequencies; usually due to physical structure limitations, the duplexer formed by small-size filters is difficult to achieve high channel isolation; and in the RF front end, the power splitter also occupies a large size; therefore, the fusion filter and the power splitter realize the filter power splitter, and use the common port to connect to form a brush duplexing power splitter, which can effectively reduce the overall size of the circuit and reduce losses.

[0004] Traditional filter and power divider designs mainly rely on two methods: dielectric substrates and waveguide cavities. However, these methods suffer from technical problems such as high loss, low power capacity, and difficulty in processing. Specifically, the dielectric substrate-based method has the advantages of small size and low cost, but the dielectric substrate has high loss and low power capacity in the millimeter wave band. Compared with the dielectric substrate, the waveguide cavity structure has low loss and high power capacity, but as the frequency increases, the overall size of the device decreases, and the difficulty of processing the metal waveguide structure increases. Summary of the Invention

[0005] In response to the technical problems existing in the prior art, the present invention provides a millimeter-wave duplex power divider based on a multi-layer metal gap waveguide and a working method thereof, so as to solve the technical problems of high loss, low power capacity and high processing difficulty in the design of traditional filters and power dividers.

[0006] In order to achieve the above object, the technical solution adopted by the present invention is:

[0007] The present invention provides a millimeter-wave duplex power divider based on a multi-layer metal gap waveguide, comprising a common channel, a low-frequency filtering power divider, and a high-frequency filtering power divider; the input port of the common channel is used to connect to an electromagnetic wave signal source, and the output end of the common channel includes two upper and lower output channels; wherein the first output channel is connected to the input port of the low-frequency filtering power divider, and the second output channel is connected to the input port of the high-frequency filtering power divider;

[0008] The low-frequency filter power divider and the high-frequency filter power divider are stacked up and down, and both adopt a double-layer metal gap waveguide structure; wherein a fourth-order resonant cavity is arranged inside the double-layer metal gap waveguide structure to realize the duplex power division function.

[0009] Furthermore, the common channel includes a common channel transition structure;

[0010] The common channel transition structure adopts a rectangular metal wall structure, one end of which is a common input port, and the other end of which is a metal wall output port; wherein, six-level transition groove structures are symmetrically arranged on the top inner wall and the bottom inner wall of the rectangular metal wall structure, and the six-level transition groove structures are arranged in sequence from the common input port to the metal wall output port; wherein, each level of the transition groove structure is a rectangular groove structure extending toward the top inner wall or the bottom inner wall of the rectangular metal wall structure, and the width of each level of the transition groove structure is the same as the width of the rectangular metal wall structure, and the height increases in sequence;

[0011] A transition groove matching structure is provided at the center of the metal wall output port to divide the metal wall output port into a low-frequency output channel and a high-frequency output channel; wherein, the low-frequency output channel is used to be connected to the low-frequency filter power divider, and the high-frequency output channel is used to be connected to the high-frequency filter power divider.

[0012] Furthermore, the common channel also includes a low-frequency matching structure and a high-frequency matching structure;

[0013] The low-frequency matching structure is arranged between the low-frequency output channel and the low-frequency filter power divider, and the high-frequency matching structure is arranged between the high-frequency output channel and the high-frequency filter power divider; wherein, the low-frequency matching structure and the high-frequency matching structure both adopt a gap waveguide structure based on a pin structure.

[0014] Furthermore, in the double-layer metal gap waveguide structure, a first-order resonant cavity and a second-order resonant cavity are provided in one layer of the metal gap waveguide structure connected to the common channel, and a third-order resonant cavity and two fourth-order resonant cavities are provided in another layer of the metal gap waveguide structure; wherein the two fourth-order resonant cavities are symmetrically arranged on both sides of the third-order resonant cavity.

[0015] Furthermore, the resonance modes of the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are all TE101 modes.

[0016] Furthermore, in the same double-layer metal gap waveguide structure, the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are of the same size and have square cross-sections.

[0017] Furthermore, in the same double-layer metal gap waveguide structure, a metal tuning column is provided in each resonant cavity; wherein the metal tuning column is used to adjust the cavity resonance frequency of the resonant cavity.

[0018] Furthermore, in the double-layer metal gap waveguide structure, a metal diaphragm is provided between two adjacent resonant cavities in the same layer of the metal gap waveguide structure, and the resonant cavities of the two adjacent layers of the metal gap waveguide structure are coupled using metal circular holes.

[0019] Furthermore, in the double-layer metal gap waveguide structure, each resonant cavity is surrounded by metal pins arranged on a metal plate.

[0020] The present invention also provides a method for operating a millimeter wave duplex power splitter based on a multilayer metal gap waveguide, comprising:

[0021] The electromagnetic waves emitted by the electromagnetic wave signal source are received by using a public channel, and the low-frequency electromagnetic waves are input into the low-frequency filter power divider, and the high-frequency electromagnetic waves are input into the high-frequency filter power divider;

[0022] In the low-frequency filtering power divider, the low-frequency electromagnetic waves are filtered and the power is distributed through the double-layer metal gap waveguide structure;

[0023] In the high-frequency filtering power divider, high-frequency electromagnetic waves are filtered and power distributed through a double-layer metal gap waveguide structure.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The millimeter wave duplex power divider based on multi-layer metal gap waveguide provided by the present invention divides the input electromagnetic wave into two paths through a common channel, respectively entering a low-frequency filter power divider and a high-frequency filter power divider, so that it can simultaneously process electromagnetic waves of different frequency bands and realize duplex operation; the output end of the common channel is set as two upper and lower output channels, the low-frequency filter power divider and the high-frequency filter power divider are stacked up and down, and respectively connected to the upper and lower output channels of the common channel, and the low-frequency filter power divider and the high-frequency filter power divider both adopt a double-layer metal gap waveguide structure; the functions of the duplexer and the power divider are integrated, which greatly reduces the errors caused by processing and assembly errors. The loss can be reduced, which can reduce the difficulty of processing while achieving low insertion loss and high channel isolation of the duplex power splitter; secondly, the structure of two double-layer gold gap waveguide structures stacked up and down greatly reduces the occupied space of the device; in addition, the use of an all-metal structure helps to reduce the insertion loss of the millimeter-wave duplex power splitter, thereby effectively improving the power capacity of the millimeter-wave duplex power splitter; secondly, both the low-frequency filtering power splitter and the high-frequency filtering power splitter adopt a double-layer metal gap waveguide structure and a fourth-order resonant cavity is set inside, which helps to achieve precise filtering effect, effectively suppress out-of-band interference and stray signals, and ensure the purity and stability of electromagnetic wave transmission.

[0026] Furthermore, the common channel adopts a common channel transition structure with a rectangular metal wall structure, and a gap waveguide structure based on a pin structure is set at the two output channels of the rectangular metal wall structure as a matching structure, which effectively improves the overall matching performance and reduces the return loss of the millimeter wave duplex power divider.

[0027] Furthermore, the resonant cavities in the same double-layer metal gap waveguide structure are set to the same size, and the cavity cross-sections are all square, so that the overall size of the filter power divider is fixed, and the square cavity is convenient for designing and realizing the power division structure.

[0028] Furthermore, in the double-layer metal gap waveguide structure, a metal diaphragm is provided between two adjacent resonant cavity cavities in the same layer of the metal gap waveguide structure, which helps to suppress the high-order mode coupling of the resonant cavity and improve the frequency selectivity of the duplex power divider. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a schematic diagram of the three-dimensional structure of the millimeter wave duplex power splitter provided in Example 1;

[0030] Figure 2 Schematic diagram of the three-dimensional structure of the common channel in Example 1;

[0031] Figure 3 is a side sectional view of the common channel in Example 1;

[0032] Figure 4Schematic diagram of the bottom metal plate and upper structure of the low-frequency filter in Example 1;

[0033] Figure 5 Schematic diagram of the middle metal plate and lower structure of the low-frequency filter in Example 1;

[0034] Figure 6 Schematic diagram of the middle metal plate and upper structure of the high-frequency filter in Example 1;

[0035] Figure 7 Schematic diagram of the middle metal plate and lower structure of the low-frequency filter in Example 1;

[0036] Figure 8 This is a transmission coefficient diagram of the millimeter wave duplex power splitter described in Example 1;

[0037] Figure 9 This is the output phase diagram of the millimeter wave duplex power splitter described in Example 1.

[0038] Among them, 1 common channel, 2 low-frequency filter power divider, 3 high-frequency filter power divider; 11 common channel transition structure, 12 low-frequency matching structure, 13 high-frequency matching structure; 111 first-order transition slot, 112 second-order transition slot, 113 third-order transition slot, 114 fourth-order transition slot, 115 fifth-order transition slot, 116 sixth-order transition slot, 117 first-order transition slot matching structure, 118 second-order transition slot matching structure; 21 low-frequency filter bottom metal plate, 22 low-frequency filter middle metal plate, 23 low-frequency filter top metal plate; 211 low-frequency filter first-order cavity tuning metal column, 212 low-frequency filter second-order cavity tuning metal column; 221 low-frequency resonant cavity pin structure, 222 low-frequency filter input port metal diaphragm, 223 low-frequency filter first- and second-order cavity coupling metal diaphragm, 224 low-frequency filter third- and fourth-order cavity coupling metal diaphragm, 225 low-frequency filter output Output port metal diaphragm, 226 low-frequency filter output port, 227 low-frequency filter second and third order cavity coupling metal hole; 231 low-frequency filter third order cavity tuning metal column, 232 low-frequency filter fourth order cavity tuning metal column; 31 high-frequency filter top metal plate, 32 high-frequency filter middle metal plate, 33 high-frequency filter bottom metal plate; 311 high-frequency filter first order cavity tuning metal column, 312 high-frequency filter second order cavity tuning metal column; 321 high-frequency filter input port metal diaphragm, 322 high-frequency filter first and second order cavity coupling metal diaphragm, 323 high-frequency filter third and fourth order cavity coupling metal diaphragm, 324 high-frequency filter output port metal diaphragm, 325 high-frequency filter output port, 326 high-frequency filter second and third order cavity coupling metal hole; 331 high-frequency filter third order cavity tuning metal column, 332 high-frequency filter fourth order cavity tuning metal column. DETAILED DESCRIPTION

[0039] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention more clearly understood, the present invention is further described in detail in the following specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0040] Example 1

[0041] As attached Figure 1-7 As shown, this embodiment 1 provides a millimeter-wave duplex power divider based on a multi-layer metal gap waveguide, including a common channel 1, a low-frequency filtering power divider 2 and a high-frequency filtering power divider 3; the input port of the common channel 1 is used to be connected to an electromagnetic wave signal source to divide the received electromagnetic wave into two paths; wherein, the low-frequency electromagnetic wave enters the low-frequency filtering power divider 2 for power distribution, and the high-frequency electromagnetic wave enters the high-frequency filtering power divider 3 for power distribution; specifically, the output end of the common channel 1 includes two upper and lower output channels; wherein, the first output channel located at the top is connected to the input port of the low-frequency filtering power divider 2, and the second output channel located at the bottom is connected to the input port of the high-frequency filtering power divider 3.

[0042] In this embodiment 1, the common channel 1 adopts a three-port structure, as shown in the attached Figure 2-3 As shown; wherein, the first port is a common input port, the other two ports are output ports of a common channel, and the two output ports of the common channel are arranged up and down; specifically, the common channel 1 includes a common channel transition structure 11, a low-frequency matching structure 12 and a high-frequency matching structure 13.

[0043] The common channel transition structure 11 adopts a rectangular metal wall structure; along the length direction of the rectangular metal wall structure, one end of the rectangular wall structure is a common input port, and the other end of the rectangular metal wall structure is a metal wall output port; wherein, the interior of the rectangular metal wall structure is symmetrical up and down and left and right; six-level transition groove structures are symmetrically arranged on the top inner wall and the bottom inner wall of the rectangular metal wall structure, and the six-level transition groove structures are arranged in sequence from the common input port to the metal wall output port; wherein, each level of the transition groove structure is a rectangular groove structure extending toward the top inner wall or the bottom inner wall of the rectangular metal wall structure.

[0044] Specifically, taking the six-level transition groove structure on the top inner wall of the rectangular metal wall structure as an example, it includes a first-level transition groove 111, a second-level transition groove 112, a third-level transition groove 113, a fourth-level transition groove 114, a fifth-level transition groove 115 and a sixth-level transition groove 116, which are arranged in sequence from the common input port to the metal wall output port; the bottoms of the first-level transition groove 111, the second-level transition groove 112, the third-level transition groove 113, the fourth-level transition groove 114, the fifth-level transition groove 115 and the sixth-level transition groove 116 all extend toward the top inner wall of the rectangular metal wall structure, and their heights increase successively; wherein, the width of each level of transition groove is the same as the width of the rectangular metal wall structure.

[0045] It should be noted that the six-level transition groove structure on the inner wall of the bottom end of the rectangular metal wall structure is the same as the six-level transition groove structure on the inner wall of the top end of the rectangular metal wall structure, and will not be repeated here.

[0046] A transition groove matching structure is provided at the center of the metal wall output port to divide the metal wall output port into a low-frequency output channel and a high-frequency output channel; wherein, the transition groove matching structure is arranged perpendicular to the length direction of the rectangular metal wall structure and is placed in the middle of the upper and lower sixth-level transition grooves 116; one end of the transition groove matching structure is connected to the inner wall of one side of the rectangular metal wall structure, and the other end of the transition groove matching structure is connected to the inner wall of the other side of the rectangular metal wall structure; specifically, the transition groove matching structure includes a first transition groove matching structure 117 and a second transition groove matching structure 118 arranged in sequence along the length direction of the rectangular metal wall structure to achieve transition structure matching; it should be noted that by arranging the transition matching structure in the rectangular metal wall structure, the rectangular metal wall structure has the function of a metal power divider, thereby realizing power distribution of the input electromagnetic waves; preferably, the common input port, the low-frequency output channel and the high-frequency output channel are all WR-34 waveguide ports.

[0047] It should be noted that the low-frequency output channel is used to be connected to the input port of the low-frequency filter power divider 2, and the high-frequency output channel is used to be connected to the input port of the high-frequency filter power divider 3; the low-frequency matching structure 12 is arranged between the low-frequency output channel and the low-frequency filter power divider 2, and the high-frequency matching structure 13 is arranged between the high-frequency output channel and the high-frequency filter power divider 3; preferably, the low-frequency matching structure 12 and the high-frequency matching structure 13 both adopt a gap waveguide structure based on a pin structure, so that the low-frequency matching structure 12 and the high-frequency matching structure 13 have the function of a quarter-wavelength impedance transformer, which is used to achieve good matching between the low-frequency filter power divider 2, the high-frequency filter power divider 3 and the common channel 1.

[0048] The dimensional characteristics of the common channel 1 are described as follows:

[0049] The dimensions of the common input port are: width × height = 8.64mm × 4.32mm; the length of the first-stage transition groove 111 is 1.8mm, the dimensions of the second-stage transition groove 112 are: length × height = 2.2mm × 5.4mm, the dimensions of the third-stage transition groove 113 are: length × height = 1.9mm × 7.7mm, the dimensions of the fourth-stage transition groove 114 are: length × height = 1.9mm × 9.4mm, the dimensions of the fifth-stage transition groove 115 are: length × height = 2.0mm × 13.8mm, and the dimensions of the sixth-stage transition groove 116 are: length × height = 2.0mm × 13.8mm. =2.6mm×17.0mm; the dimensional characteristics of the first transition groove matching structure 117 are: length×height=1.0mm×2.0mm; the dimensional characteristics of the second transition groove matching structure 118 are: length×height=1.6mm×3.0mm; the width of the first-level transition groove 111, the second-level transition groove 112, the third-level transition groove 113, the fourth-level transition groove 114, the fifth-level transition groove 115 and the sixth-level transition groove 116 are all 8.64mm; the length of the low-frequency matching structure 12 is 3.1mm; the length of the high-frequency matching structure 13 is 2.8mm.

[0050] In this embodiment 1, the low-frequency filter power divider 2 and the high-frequency filter power divider 3 are stacked up and down, and both adopt a double-layer metal gap waveguide structure, so that the low-frequency filter power divider 2 and the high-frequency filter power divider 3 form a multi-layer gap waveguide structure, thereby reducing the overall space occupied by the device; the low-frequency filter power divider 2 is used to filter and power distribute low-frequency electromagnetic waves through a double-layer metal gap waveguide structure, and the high-frequency filter power divider 3 is used to filter and power distribute high-frequency electromagnetic waves through a double-layer metal gap waveguide structure.

[0051] A fourth-order resonant cavity is arranged inside the double-layer metal gap waveguide structure to realize the duplex centimeter function; specifically, in the double-layer metal gap waveguide structure, a layer of metal gap waveguide structure connected to the common channel 1 is provided with a first-order resonant cavity and a second-order resonant cavity, and another layer of metal gap waveguide structure is provided with a third-order resonant cavity and two fourth-order resonant cavities; wherein the two fourth-order resonant cavities are symmetrically arranged on both sides of the third-order resonant cavity; secondly, in the double-layer metal gap waveguide structure, each resonant cavity is surrounded by metal pins arranged on a metal plate; preferably, three rows of metal pins are used to construct each resonant cavity to prevent electromagnetic wave leakage; wherein all pins are the same in size and shape.

[0052] The resonant modes of the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are all TE101 modes; a metal diaphragm is arranged between two adjacent resonant cavity cavities in the same layer of metal gap waveguide structure, and metal circular holes are used to couple the resonant cavity cavities of two adjacent layers of metal gap waveguide structures; in the same double-layer metal gap waveguide structure, the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are of the same size and have square cross-sections; in the same double-layer metal gap waveguide structure, a metal tuning column is respectively arranged in each resonant cavity; wherein, the metal tuning column is used to adjust the cavity resonant frequency of the resonant cavity.

[0053] It should be noted that compared with the height of the standard rectangular waveguide mouth, the height of the resonant cavity in the double-layer metal gap waveguide structure is reduced; since the resonant mode of the resonant cavity is designed to be TE101 mode, in order to suppress high-order modes, when the height of the resonant cavity is reduced, the high-order modes are suppressed, while the TE101 mode is basically unaffected; secondly, the upper and lower ends of the metal diaphragm arranged between the layers are directly in contact with the upper and lower metal plates respectively, which can effectively suppress the coupling between high-order modes, thereby improving the frequency selection characteristics; secondly, in the same double-layer metal gap waveguide structure, the size of all resonant cavities is set to the same, so that the cavity resonance frequency of the resonant cavity is adjusted only by the metal tuning column in the resonator cavity, thereby achieving the overall size of the fixed filter power divider, which is conducive to the realization of the power division structure, improves the overall stability of the device, and reduces the amount of optimization in the design process.

[0054] As attached Figure 1 、 4 As shown in FIG. 5 , the low-frequency filter power divider 2 includes a low-frequency filter bottom metal plate 21 , a low-frequency filter middle metal plate 22 and a low-frequency filter top metal plate 23 , which are arranged in sequence from bottom to top.

[0055] The bottom metal plate 21 of the low-frequency filter is horizontally arranged outside the output end of the low-frequency output channel, the middle metal plate 22 of the low-frequency filter is horizontally arranged above the bottom metal plate 21 of the low-frequency filter, and the top metal plate 23 of the low-frequency filter is horizontally arranged above the middle metal plate 22 of the low-frequency filter.

[0056] A low-frequency resonant cavity pin structure 221 is provided on the upper and lower surfaces of the low-frequency filter middle metal plate 22, and one end of the low-frequency resonant cavity pin structure 221 is vertically connected to the upper surface or lower surface of the low-frequency filter middle metal plate 22; the other end of the low-frequency resonant cavity pin structure 221 extends toward the upper surface of the low-frequency filter bottom metal plate 21 or the lower surface of the low-frequency filter top metal plate 23, and is vertically connected to the upper surface of the low-frequency filter bottom metal plate 21 or the lower surface of the low-frequency filter top metal plate 23.

[0057] It should be noted that the low-frequency resonant cavity pin structure attached to the lower surface of the low-frequency filter middle metal plate 22 is enclosed in the interlayer area between the low-frequency filter bottom metal plate 21 and the low-frequency filter middle metal plate 22 to form the first-order resonant cavity of the low-frequency filter and the second-order resonant cavity of the low-frequency filter; wherein, the first-order resonant cavity of the low-frequency filter is arranged close to one side of the low-frequency output channel, and the second-order resonant cavity of the low-frequency filter is located in the middle of the interlayer area between the low-frequency filter bottom metal plate 21 and the low-frequency filter middle metal plate 22.

[0058] The low-frequency resonant cavity pin structure attached to the upper surface of the low-frequency filter middle metal plate 22 encloses the interlayer area between the low-frequency filter middle metal plate 22 and the low-frequency filter top metal plate 23 to form a low-frequency filter third-order resonant cavity and two low-frequency filter fourth-order resonant cavities; wherein, the low-frequency filter third-order resonant cavity is located in the middle of the interlayer area between the low-frequency filter middle metal plate 22 and the low-frequency filter top metal plate 23, and is placed above the low-frequency filter second-order resonant cavity; the two low-frequency filter fourth-order resonant cavities are symmetrically arranged on both sides of the low-frequency filter third-order resonant cavity.

[0059] The first-order resonant cavity of the low-frequency filter, the second-order resonant cavity of the low-frequency filter, the third-order resonant cavity of the low-frequency filter, and the fourth-order resonant cavity of the low-frequency filter are of the same size and have square cross-sections; the low-frequency resonant cavity pin structures 221 on each side of the first-order resonant cavity of the low-frequency filter, the second-order resonant cavity of the low-frequency filter, the third-order resonant cavity of the low-frequency filter, and the fourth-order resonant cavity of the low-frequency filter are distributed in three rows, and the spacing between two adjacent low-frequency resonant cavity pin structures 221 is the same to prevent electromagnetic wave leakage.

[0060] The upper surface of the low-frequency filter bottom metal plate 21 is provided with a low-frequency filter first-order cavity tuning metal column 211 and a low-frequency filter second-order cavity tuning metal column 212; wherein, the low-frequency filter first-order cavity tuning metal column 211 is located in the first-order resonant cavity of the low-frequency filter to adjust the cavity resonance frequency of the first-order resonant cavity of the low-frequency filter; the low-frequency filter second-order cavity tuning metal column 212 is set in the second-order resonant cavity of the low-frequency filter to adjust the cavity resonance frequency of the second-order resonant cavity of the low-frequency filter.

[0061] The input end of the first-order resonant cavity of the low-frequency filter is provided with a low-frequency filter input port metal diaphragm 222, that is, the low-frequency filter input port metal diaphragm 222 is located between the output end of the low-frequency output channel and the input end of the first-order resonant cavity of the low-frequency filter; a low-frequency filter first- and second-order cavity coupling metal diaphragm 223 is provided between the first-order resonant cavity of the low-frequency filter and the second-order resonant cavity of the low-frequency filter; and a low-frequency filter third- and fourth-order cavity coupling metal diaphragm 224 is provided between the third-order resonant cavity of the low-frequency filter and the fourth-order resonant cavity of the low-frequency filter.

[0062] A low-frequency filter power divider output port 226 is respectively provided at both ends of the low-frequency filter middle metal plate 22, which is used as the output end of the low-frequency filter power divider 2; a low-frequency filter output port metal diaphragm 225 is provided between the fourth-order resonant cavity of the low-frequency filter and the low-frequency filter power divider output port 226.

[0063] A low-frequency filter second- and third-order cavity coupling metal hole 227 is provided in the center of the low-frequency filter middle metal plate 22. The lower end of the low-frequency filter second- and third-order cavity coupling metal hole 227 is connected to the second-order resonant cavity of the low-frequency filter, and the upper end of the low-frequency filter second- and third-order cavity coupling metal hole 227 is connected to the third-order resonant cavity of the low-frequency filter.

[0064] The upper surface of the low-frequency filter middle metal plate 22 is provided with a low-frequency filter third-order cavity tuning metal column 231 and a low-frequency filter fourth-order cavity tuning metal column 232; wherein, the low-frequency filter third-order cavity tuning metal column 231 is located in the third-order resonant cavity of the low-frequency filter to adjust the cavity resonance frequency of the third-order resonant cavity of the low-frequency filter; the low-frequency filter fourth-order cavity tuning metal column 232 is set in the fourth-order resonant cavity of the low-frequency filter to adjust the cavity resonance frequency of the fourth-order resonant cavity of the low-frequency filter.

[0065] In the low-frequency filter power divider 2, a low-frequency resonant cavity pin structure 221 of exactly the same shape and size is used to form a low-frequency filter first-order resonant cavity cavity, a low-frequency filter second-order resonant cavity cavity, a low-frequency filter third-order resonant cavity cavity and two low-frequency filter fourth-order resonant cavities; the low-frequency filter first-order resonant cavity cavity, the low-frequency filter second-order resonant cavity cavity, the low-frequency filter third-order resonant cavity cavity and two low-frequency filter fourth-order resonant cavities are all slot gap waveguide resonant cavities with square cross-sections; wherein, the low-frequency The external quality factor of the input port of the filter power divider 2 is achieved by adjusting the slot width of the metal diaphragm 222 of the low-frequency filter input port, and the external quality factor of the output port of the low-frequency filter power divider 2 is achieved by adjusting the slot width of the metal diaphragm 225 of the low-frequency filter output port; the resonant cavity coupling coefficient between the first-order resonant cavity of the low-frequency filter and the second-order resonant cavity of the low-frequency filter is achieved by adjusting the slot width of the metal diaphragm 223 of the first- and second-order cavity coupling of the low-frequency filter; the second-order resonant cavity of the low-frequency filter and the third-order resonant cavity of the low-frequency filter are achieved by adjusting the slot width of the metal diaphragm 223 of the second-order resonant cavity coupling of the low-frequency filter. The resonant cavity coupling coefficient between the order resonant cavity cavities is achieved by adjusting the radius of the low-frequency filter second- and third-order cavity coupling metal hole 227; wherein the thickness of the low-frequency filter input port metal diaphragm 222, the low-frequency filter first- and second-order cavity coupling metal diaphragm 223, the low-frequency filter third- and fourth-order cavity coupling metal diaphragm 224, and the low-frequency filter output port metal diaphragm 225 is the same as the width of the low-frequency resonant cavity pin structure 221; the low-frequency filter first-order resonant cavity cavity, the low-frequency filter second-order resonant cavity cavity The resonant frequencies of the body, the third-order resonant cavity of the low-frequency filter and the two fourth-order resonant cavities of the low-frequency filters are achieved by adjusting the heights of the first-order cavity tuning metal column 211 of the low-frequency filter, the second-order cavity tuning metal column 212 of the low-frequency filter, the third-order cavity tuning metal column 231 of the low-frequency filter and the fourth-order cavity tuning metal column 232 of the low-frequency filter in the cavity; in addition, the low-frequency filter output port 226 serves as the output waveguide port of the low-frequency filter power divider 2, and is used to connect to a gap waveguide structure with the same width as it.

[0066] The dimensional characteristics of the low-frequency filter power divider 2 are described as follows:

[0067] The thickness of the bottom metal plate 21 of the low-frequency filter is 4.5 mm, and the thickness of the middle metal plate 22 of the low-frequency filter is 0.5 mm; all the low-frequency resonant cavity pin structures 221 are the same size, and the dimensional characteristics of the low-frequency resonant cavity pin structures 221 are: length × width × height = 0.8 mm × 0.8 mm × 3.8 mm, and the interval period is 2 mm; the cross-sectional dimensional characteristics of the first-order resonant cavity of the low-frequency filter, the second-order resonant cavity of the low-frequency filter, the third-order resonant cavity of the low-frequency filter, and the fourth-order resonant cavity of the low-frequency filter are all: length × width × height = 7.2 mm × 7.2 mm × 4 mm.

[0068] The slot width of the metal diaphragm 222 at the low-frequency filter input port is 5.04 mm, and the slot width of the metal diaphragm 225 at the low-frequency filter output port is 4.9 mm; the slot width of the metal diaphragm 223 for the first and second order cavity coupling of the low-frequency filter is 3.32 mm, and the slot width of the metal diaphragm 224 for the third and fourth order cavity coupling of the low-frequency filter is 3.12 mm.

[0069] The radius of the second and third order cavity coupling metal hole 227 of the low-frequency filter is 1.89 mm; the height of the first order cavity tuning metal pillar 211 of the low-frequency filter is 0.79 mm, the height of the second order cavity tuning metal pillar 212 of the low-frequency filter is 1.53 mm, the height of the third order cavity tuning metal pillar 231 of the low-frequency filter is 1.41 mm, and the height of the fourth order cavity tuning metal pillar 232 of the low-frequency filter is 0.68 mm. The radii of the first order cavity tuning metal pillar 211 of the low-frequency filter, the second order cavity tuning metal pillar 212 of the low-frequency filter, the third order cavity tuning metal pillar 231 of the low-frequency filter, and the fourth order cavity tuning metal pillar 232 of the low-frequency filter are all 0.3 mm.

[0070] As attached Figure 1 、 6 As shown in FIG-7 , the high-frequency filter power divider 3 includes a high-frequency filter top metal plate 31 , a high-frequency filter middle metal plate 32 and a high-frequency filter bottom metal plate 33 , which are arranged in sequence from top to bottom.

[0071] The top metal plate 31 of the high-frequency filter is horizontally arranged outside the output end of the high-frequency output channel, the middle metal plate 32 of the high-frequency filter is horizontally arranged below the top metal plate 31 of the high-frequency filter, and the bottom metal plate 33 of the high-frequency filter is horizontally arranged below the middle metal plate 32 of the high-frequency filter.

[0072] The upper and lower surfaces of the high-frequency filter middle metal plate 32 are both provided with high-frequency resonant cavity pin structures, one end of the high-frequency resonant cavity pin structure is vertically connected to the upper surface or lower surface of the high-frequency filter middle metal plate 32; the other end of the high-frequency resonant cavity pin structure extends toward the lower surface of the high-frequency filter top metal plate 31 or the upper surface of the high-frequency filter bottom metal plate 33, and is vertically connected to the lower surface of the high-frequency filter top metal plate 31 or the upper surface of the high-frequency filter bottom metal plate 33.

[0073] It should be noted that the high-frequency resonant cavity pin structure attached to the upper surface of the high-frequency filter middle metal plate 32 is enclosed in the interlayer area between the high-frequency filter top metal plate 31 and the high-frequency filter middle metal plate 32 to form the first-order resonant cavity of the high-frequency filter and the second-order resonant cavity of the high-frequency filter; wherein, the first-order resonant cavity of the high-frequency filter is arranged close to one side of the high-frequency output channel, and the second-order resonant cavity of the high-frequency filter is located in the middle of the interlayer area between the high-frequency filter top metal plate 31 and the high-frequency filter middle metal plate 32.

[0074] The high-frequency resonant cavity pin structure attached to the lower surface of the high-frequency filter middle metal plate 32 encloses the interlayer area between the high-frequency filter middle metal plate 32 and the high-frequency filter bottom metal plate 33 to form a high-frequency filter third-order resonant cavity and two high-frequency filter fourth-order resonant cavities; wherein, the high-frequency filter third-order resonant cavity is located in the middle of the interlayer area between the high-frequency filter middle metal plate 32 and the high-frequency filter bottom metal plate 33, and is placed above the high-frequency filter second-order resonant cavity; the two high-frequency filter fourth-order resonant cavities are symmetrically arranged on both sides of the high-frequency filter third-order resonant cavity.

[0075] The first-order resonant cavity of the high-frequency filter, the second-order resonant cavity of the high-frequency filter, the third-order resonant cavity of the high-frequency filter, and the fourth-order resonant cavity of the high-frequency filter are of the same size and have square cross-sections; the high-frequency resonant cavity pin structures on each side of the first-order resonant cavity of the high-frequency filter, the second-order resonant cavity of the high-frequency filter, the third-order resonant cavity of the high-frequency filter, and the fourth-order resonant cavity of the high-frequency filter are distributed in three rows, and the spacing between two adjacent high-frequency resonant cavity pin structures is the same to prevent electromagnetic wave leakage.

[0076] The lower surface of the high-frequency filter top metal plate 31 is provided with a high-frequency filter first-order cavity tuning metal column 311 and a high-frequency filter second-order cavity tuning metal column 312; wherein, the high-frequency filter first-order cavity tuning metal column 311 is located in the first-order resonant cavity of the high-frequency filter to adjust the cavity resonance frequency of the first-order resonant cavity of the high-frequency filter; the high-frequency filter second-order cavity tuning metal column 312 is set in the second-order resonant cavity of the high-frequency filter to adjust the cavity resonance frequency of the second-order resonant cavity of the high-frequency filter.

[0077] The input end of the first-order resonant cavity of the high-frequency filter is provided with a high-frequency filter input port metal diaphragm 321, that is, the high-frequency filter input port metal diaphragm 321 is located between the output end of the high-frequency output channel and the input end of the first-order resonant cavity of the high-frequency filter; a high-frequency filter first- and second-order cavity coupling metal diaphragm 322 is provided between the first-order resonant cavity of the high-frequency filter and the second-order resonant cavity of the high-frequency filter; and a high-frequency filter third- and fourth-order cavity coupling metal diaphragm 323 is provided between the third-order resonant cavity of the high-frequency filter and the fourth-order resonant cavity of the high-frequency filter.

[0078] A high-frequency filter power divider output port 325 is respectively provided at both ends of the high-frequency filter middle metal plate 32, which is used as the output end of the high-frequency filter power divider 3; a high-frequency filter output port metal diaphragm 324 is provided between the fourth-order resonant cavity of the high-frequency filter and the high-frequency filter power divider output port 325.

[0079] A high-frequency filter second- and third-order cavity coupling metal hole 326 is provided in the center of the middle metal plate 32 of the high-frequency filter. The upper end of the high-frequency filter second- and third-order cavity coupling metal hole 326 is connected to the second-order resonant cavity of the high-frequency filter, and the lower end of the high-frequency filter second- and third-order cavity coupling metal hole 326 is connected to the third-order resonant cavity of the high-frequency filter.

[0080] The lower surface of the high-frequency filter middle metal plate 32 is provided with a high-frequency filter third-order cavity tuning metal column 331 and a high-frequency filter fourth-order cavity tuning metal column 332; wherein, the high-frequency filter third-order cavity tuning metal column 331 is located in the third-order resonant cavity of the high-frequency filter to adjust the cavity resonance frequency of the third-order resonant cavity of the high-frequency filter; the high-frequency filter fourth-order cavity tuning metal column 332 is set in the fourth-order resonant cavity of the high-frequency filter to adjust the cavity resonance frequency of the fourth-order resonant cavity of the high-frequency filter.

[0081] In the high-frequency filter power divider 3, a high-frequency resonant cavity pin structure of exactly the same shape and size is used to form a first-order resonant cavity cavity of the high-frequency filter, a second-order resonant cavity cavity of the high-frequency filter, a third-order resonant cavity cavity of the high-frequency filter, and two fourth-order resonant cavities of the high-frequency filter; the first-order resonant cavity cavity of the high-frequency filter, the second-order resonant cavity cavity of the high-frequency filter, the third-order resonant cavity cavity of the high-frequency filter, and the two fourth-order resonant cavities of the high-frequency filter are all slot gap waveguide resonant cavities with square cross-sections; wherein, the external quality factor of the input port of the high-frequency filter power divider 3 is achieved by adjusting the slot width of the metal diaphragm 321 of the high-frequency filter input port, and the external quality factor of the output port of the high-frequency filter power divider 3 is achieved by adjusting the slot width of the metal diaphragm 324 of the high-frequency filter output port; the resonant cavity coupling coefficient between the first-order resonant cavity cavity of the high-frequency filter and the second-order resonant cavity cavity of the high-frequency filter is achieved by adjusting the slot width of the metal diaphragm 322 of the first and second-order cavity coupling of the high-frequency filter; the second-order resonant cavity cavity of the high-frequency filter and the third-order resonant cavity cavity of the high-frequency filter are achieved by adjusting the slot width of the metal diaphragm 324 of the output port of the high-frequency filter; the resonant cavity coupling coefficient between the first-order resonant cavity cavity of the high-frequency filter and the second-order resonant cavity cavity of the high-frequency filter is achieved by adjusting the slot width of the metal diaphragm 322 of the first and second-order cavity coupling of the high-frequency filter; the second-order resonant cavity cavity of the high-frequency filter and the third-order re The resonant cavity coupling coefficient between the resonant cavities of the first and third order resonant cavities is achieved by adjusting the radius of the high-frequency filter second and third order cavity coupling metal holes 326; wherein the thickness of the high-frequency filter input port metal diaphragm 321, the high-frequency filter first and second order cavity coupling metal diaphragm 322, the high-frequency filter third and fourth order cavity coupling metal diaphragm 323, and the high-frequency filter output port metal diaphragm 324 is the same as the width of the high-frequency resonant cavity pin structure; the resonant frequencies of the high-frequency filter first order resonant cavity cavity, the high-frequency filter second order resonant cavity cavity, the high-frequency filter third order resonant cavity cavity, and the two high-frequency filter fourth order resonant cavities are achieved by adjusting the heights of the high-frequency filter first order cavity tuning metal pillars 311, the high-frequency filter second order cavity tuning metal pillars 312, the high-frequency filter third order cavity tuning metal pillars 331, and the high-frequency filter fourth order cavity tuning metal pillars 332 in the cavity; in addition, the high-frequency filter output port 325 serves as the output waveguide port of the high-frequency filter power divider 3, and is used to connect to the gap waveguide structure with the same width.

[0082] The dimensional characteristics of the high-frequency filter power divider 3 are described as follows:

[0083] The thickness of the top metal plate 31 of the high-frequency filter is 4.5 mm, and the thickness of the middle metal plate 32 of the high-frequency filter is 0.5 mm; all the high-frequency resonant cavity pin structures are the same size, and the dimensional characteristics of the high-frequency resonant cavity pin structures are: length × width × height = 0.8 mm × 0.8 mm × 3.8 mm, and the interval period is 2 mm; the cross-sectional dimensional characteristics of the first-order resonant cavity of the high-frequency filter, the second-order resonant cavity of the high-frequency filter, the third-order resonant cavity of the high-frequency filter, and the fourth-order resonant cavity of the high-frequency filter are all: length × width × height = 5.8 mm × 5.8 mm × 4 mm.

[0084] The slot width of the metal diaphragm 321 at the high-frequency filter input port is 5.06 mm, and the slot width of the metal diaphragm 324 at the high-frequency filter output port is 5.04 mm; the slot width of the metal diaphragm 322 for the first and second order cavity coupling of the high-frequency filter is 3.32 mm, and the slot width of the metal diaphragm 323 for the third and fourth order cavity coupling of the high-frequency filter is 3.22 mm.

[0085] The radius of the second and third order cavity coupling metal hole 326 of the high-frequency filter is 1.98 mm; the height of the first order cavity tuning metal pillar 311 of the high-frequency filter is 0.56 mm, the height of the second order cavity tuning metal pillar 312 of the high-frequency filter is 1.51 mm, the height of the third order cavity tuning metal pillar 331 of the high-frequency filter is 1.37 mm, and the height of the fourth order cavity tuning metal pillar 332 of the high-frequency filter is 0.71 mm. The radii of the first order cavity tuning metal pillar 311 of the high-frequency filter, the second order cavity tuning metal pillar 312 of the high-frequency filter, the third order cavity tuning metal pillar 331 of the high-frequency filter, and the fourth order cavity tuning metal pillar 332 of the high-frequency filter are all 0.3 mm.

[0086] As attached Figure 8-9 As shown, attached Figure 8 The transmission coefficient diagram of the millimeter wave duplex power splitter described in Example 1 is given in FIG. Figure 9 The output phase diagram of the millimeter wave duplex power divider described in Example 1 is given in FIG. Figure 8-9 It can be seen that the return losses of the two passbands of the millimeter-wave duplex power divider are both better than 15dB; the low-frequency passband center frequency of the millimeter-wave duplex power divider is 26GHz, and the relative bandwidth is 4.4%; the high-frequency passband center frequency of the millimeter-wave duplex power divider is 28.2GHz, and the relative bandwidth is 4.9%; the two passband amplitudes of the millimeter-wave duplex power divider are the same, and the insertion loss is 0.3dB; the isolation between the two channels of the millimeter-wave duplex power divider is better than 50dB; the two passbands of the millimeter-wave duplex power divider are both in-phase outputs, and each passband is in-phase power division.

[0087] The millimeter-wave duplex power divider described in this embodiment 1 adopts an all-metal structure, which effectively reduces the insertion loss of the duplex power divider; the common channel 1 is a metal wall structure, and a transition structure is provided in the longitudinal direction, and is respectively connected to the high-frequency filter power divider and the low-frequency filter power divider; the high-frequency filter power divider and the low-frequency filter power divider are double-layer metal gap waveguide structures, and a gap waveguide cavity is provided inside; wherein, the high-frequency filter power divider or the low-frequency filter power divider is respectively provided with a fourth-order cavity, two cavities are provided in the layer connected to the common channel 1, and three cavities are symmetrically provided in the other layer; the cavities within the layer are coupled through a metal diaphragm, and the cavities between the layers are coupled through a circular coupling hole; tuning metal columns are provided on the upper and lower metal cover plates of the cavity to realize the functional integration of the traditional duplexer and the power divider, The multi-layer stacking structure reduces the footprint of the device and adopts an all-metal structure, which improves the power capacity of the duplex power divider; by setting a longitudinal transition structure in the common channel and connecting a gap waveguide structure after the two output channels of the common channel, the overall matching performance is improved and the return loss of the duplex power divider is reduced; the cavity sizes in the same filter power divider are the same and the cavity cross-sections are all square, which makes the overall size of the filter power divider fixed, and the square cavity is convenient for designing and realizing the power division structure; except for the metal diaphragm, the cavity structure of the filter power divider adopts a gap waveguide structure, which does not require electrical contact, effectively reducing the overall processing difficulty and assembly accuracy; the metal diaphragm is in contact with the upper and lower metal plates, which helps to suppress the high-order mode coupling of the resonant cavity and improve the frequency selectivity of the duplex power divider.

[0088] Example 2

[0089] This embodiment 2 provides a working method of a millimeter wave duplex power splitter based on a multilayer metal gap waveguide. When the millimeter wave duplex power splitter is in operation, electromagnetic waves are fed through the input port of a common channel 1, and electromagnetic waves of different frequency bands are output through different filter power splitters to achieve a duplex power splitting function. Specifically, the method includes the following steps:

[0090] The public channel 1 is used to receive electromagnetic waves emitted by the electromagnetic wave signal source, and the low-frequency electromagnetic waves are input into the low-frequency filter power divider 2, and the high-frequency electromagnetic waves are input into the high-frequency filter power divider 3; in the low-frequency filter power divider 2, the low-frequency electromagnetic waves are filtered and the power is distributed through a double-layer metal gap waveguide structure; in the high-frequency filter power divider 3, the high-frequency electromagnetic waves are filtered and the power is distributed through a double-layer metal gap waveguide structure.

[0091] Example 3

[0092] This embodiment 3 provides a method for processing a millimeter-wave duplex power splitter based on a multi-layer metal gap waveguide, which is used for the processing of the millimeter-wave duplex power splitter described in the above embodiment 1; wherein, during processing, metal CNC milling or electric spark cutting is used for mechanical processing, and soldering technology is used to eliminate any air gap that may exist at the contact surface between the metal diaphragm and the metal plate.

[0093] It should be noted that most microwave devices in the millimeter wave band adopt an all-metal structure. However, during the assembly process, it is inevitable that the metal cannot be tightly fitted due to welding, etc., forming air gaps and causing reduced efficiency. In this embodiment 3, the millimeter wave duplex power divider forms an artificial magnetic conductor (AMC) structure through a periodic nail-shaped structure. By controlling the distance from the top surface of the metal surface, a wider electromagnetic bandgap structure can be formed. Energy with a frequency within the bandgap cannot propagate, and this structure can be used to achieve low-loss transmission of electromagnetic energy. In this embodiment 3, except for the transition section and the metal diaphragm of the common channel 1, the remaining structures all adopt gap waveguides, which greatly reduces the loss caused by processing and assembly errors.

[0094] The millimeter-wave duplexer power splitter based on multi-layer metal gap waveguides described in the present invention can integrate the power splitter function into a single duplexer, reducing the complexity of the communication system. It not only has the low loss, high efficiency, and high power capacity characteristics of an all-metal structure, but also reduces the assembly precision requirements. At the same time, the multi-layer stacked structure reduces the device's footprint and achieves high inter-channel isolation.

[0095] The above embodiment is only one of the implementation methods that can realize the technical solution of the present invention. The scope of protection claimed by the present invention is not limited only to this embodiment, but also includes changes, replacements and other implementation methods that can be easily thought of by any technician familiar with this technical field within the technical scope disclosed by the present invention.

Claims

1. A millimeter wave duplex power splitter based on a multilayer metal gap waveguide, characterized in that: It comprises a common channel (1), a low-frequency filter power divider (2) and a high-frequency filter power divider (3); the input port of the common channel (1) is used to be connected to an electromagnetic wave signal source, and the output end of the common channel (1) comprises two upper and lower output channels; wherein the first output channel is connected to the input port of the low-frequency filter power divider (2), and the second output channel is connected to the input port of the high-frequency filter power divider (3); The low-frequency filter power divider (2) and the high-frequency filter power divider (3) are stacked up and down, and both adopt a double-layer metal gap waveguide structure; wherein a fourth-order resonant cavity is provided inside the double-layer metal gap waveguide structure to realize a duplex power division function; In the double-layer metal gap waveguide structure, a first-order resonant cavity and a second-order resonant cavity are provided in a layer of the metal gap waveguide structure connected to the common channel (1), and a third-order resonant cavity and two fourth-order resonant cavities are provided in another layer of the metal gap waveguide structure; wherein the two fourth-order resonant cavities are symmetrically arranged on both sides of the third-order resonant cavity; In the double-layer metal gap waveguide structure, a metal diaphragm is provided between two adjacent resonant cavities in the same layer of the metal gap waveguide structure, and the resonant cavities of the two adjacent layers of the metal gap waveguide structure are coupled using metal circular holes.

2. The millimeter wave duplex power splitter based on multi-layer metal gap waveguide according to claim 1, characterized in that: The common channel (1) includes a common channel transition structure (11); The common channel transition structure (11) adopts a rectangular metal wall structure, one end of the rectangular metal wall structure is a common input port, and the other end of the rectangular metal wall structure is a metal wall output port; wherein, six-level transition groove structures are symmetrically arranged on the top inner wall and the bottom inner wall of the rectangular metal wall structure, and the six-level transition groove structures are arranged in sequence from the common input port to the metal wall output port; wherein, each level of transition groove structure is a rectangular groove structure extending toward the top inner wall or the bottom inner wall of the rectangular metal wall structure, and the width of each level of transition groove structure is the same as the width of the rectangular metal wall structure and the height increases in sequence; A transition groove matching structure is provided at the center of the metal wall output port to divide the metal wall output port into a low-frequency output channel and a high-frequency output channel; wherein the low-frequency output channel is used to connect to the low-frequency filter power divider (2), and the high-frequency output channel is used to connect to the high-frequency filter power divider (3).

3. The millimeter wave duplex power splitter based on a multi-layer metal gap waveguide according to claim 2, characterized in that: The common channel (1) further includes a low-frequency matching structure (12) and a high-frequency matching structure (13); The low-frequency matching structure (12) is arranged between the low-frequency output channel and the low-frequency filter power divider (2), and the high-frequency matching structure (13) is arranged between the high-frequency output channel and the high-frequency filter power divider (3); wherein the low-frequency matching structure (12) and the high-frequency matching structure (13) both adopt a gap waveguide structure based on a pin structure.

4. The millimeter wave duplex power splitter based on multi-layer metal gap waveguide according to claim 1, characterized in that: The resonance modes of the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are all TE101 modes.

5. The millimeter wave duplex power splitter based on multi-layer metal gap waveguide according to claim 1, characterized in that: In the same double-layer metal gap waveguide structure, the first-order resonant cavity, the second-order resonant cavity, the third-order resonant cavity and the fourth-order resonant cavity are of the same size and have square cross-sections.

6. The millimeter wave duplex power splitter based on multi-layer metal gap waveguide according to claim 1, characterized in that: In the same double-layer metal gap waveguide structure, a metal tuning column is respectively arranged in each resonant cavity; wherein the metal tuning column is used to adjust the cavity resonance frequency of the resonant cavity.

7. The millimeter wave duplex power splitter based on multi-layer metal gap waveguide according to claim 1, characterized in that: In the double-layer metal gap waveguide structure, each resonant cavity is surrounded by metal pins arranged on a metal plate.

8. A method for operating a millimeter wave duplex power splitter based on a multi-layer metal gap waveguide according to any one of claims 1 to 7, characterized in that: include: Utilizing the public channel (1) to receive electromagnetic waves emitted by the electromagnetic wave signal source, and inputting the low-frequency electromagnetic waves into the low-frequency filter power divider (2), and inputting the high-frequency electromagnetic waves into the high-frequency filter power divider (3); In the low-frequency filtering power divider (2), filtering and power distribution of low-frequency electromagnetic waves are achieved through a double-layer metal gap waveguide structure; In the high-frequency filtering power divider (3), filtering and power distribution of high-frequency electromagnetic waves are achieved through a double-layer metal gap waveguide structure.

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