Epitaxial device

Abstract

The present invention provides an epitaxial device, comprising: an upper dome, a lower dome, a heating component, a first temperature control component and a second temperature control component. The upper dome and the lower dome are connected to form a chamber, and the chamber is used to accommodate wafers. The heating component is located outside the chamber, and is used to radiate heat into the chamber. The first temperature control component is arranged at the edge of the upper dome, and the first temperature control component is used to provide temperature control gas to the upper surface of the upper dome; the second temperature control component is arranged at the edge of the lower dome, and the second temperature control component is used to provide temperature control gas to the lower surface of the lower dome. The epitaxial device of the present invention solves the problem of process gas deposition on the surfaces of the upper dome and the lower dome by adding the first temperature control component and the second temperature control component, thereby improving the heating efficiency and heating uniformity of the wafer by thermal radiation through the upper dome and the lower dome.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to an epitaxial equipment. Background Art

[0002] In the field of semiconductor manufacturing, epitaxy equipment is a key device used to grow semiconductor materials. The epitaxy process requires extremely high temperature uniformity to ensure the consistency of deposition quality on the wafer surface. However, existing epitaxy equipment has some limitations, especially in heating the wafer through thermal radiation.

[0003] Since the reacting process gas completes the deposition reaction under heating conditions, when the wafer in the chamber is radiantly heated, the temperature inside the chamber will reach the reaction temperature, causing the reacting process gas to be deposited on the wafer surface to form an epitaxial layer of the wafer; at the same time, when the temperature of the upper dome surface and the lower dome surface forming the side wall of the chamber is high, the reacting process gas will also be deposited on the upper dome surface and the lower dome surface to form sediment particles.

[0004] The deposited particles on the inner surface of the upper dome and the lower dome will affect the light transmittance of the upper dome and the lower dome, and further affect the heating efficiency of the heating assembly in the chamber. The deposited particles are unevenly distributed on the upper dome surface and the lower dome surface, so the deposited particles will also affect the uniformity of light transmittance of the upper dome and the lower dome, and further affect the uniformity of heating the wafer in the chamber by thermal radiation passing through the upper dome and the lower dome. At the same time, if the deposited particles fall from the inner surface of the upper dome, it will also affect the quality of the epitaxial layer deposition on the wafer surface. Summary of the invention

[0005] The purpose of the present invention is to provide an epitaxial device to prevent the reaction process gas from being deposited on the surface of the upper dome and the lower dome, thereby improving the heating efficiency and heating uniformity of the wafer by thermal radiation through the upper dome and the lower dome.

[0006] In order to achieve the above object, the present invention provides an epitaxial device, comprising:

[0007] An upper dome and a lower dome, wherein the upper dome and the lower dome are connected to form a chamber, and the chamber is used to accommodate a wafer;

[0008] A heating assembly, located outside the chamber, for radiating heat into the chamber;

[0009] An upper flange and a lower flange, wherein the upper flange is arranged at the edge of the upper dome and is used to fix the upper dome to the chamber, and an upper air inlet nozzle is arranged on the outer wall of the upper flange; the lower flange is arranged at the edge of the lower dome and is used to fix the lower dome to the chamber, and a lower air inlet nozzle is arranged on the outer wall of the lower flange;

[0010] The first temperature control component and the second temperature control component are arranged on the outside of the chamber, the first temperature control component is arranged on the upper flange, and the first temperature control component is used to provide temperature control gas to the upper surface of the upper dome; the second temperature control component is arranged on the lower flange, and the second temperature control component is used to provide temperature control gas to the lower surface of the lower dome.

[0011] Optionally, the first temperature control component includes a first layer of pipeline groups, which are arranged in the upper flange, and the first layer of pipeline groups includes a plurality of first pipelines whose air outlet direction is along the first direction and a plurality of second pipelines whose air outlet direction is along the second direction; the first pipeline and the second pipeline are located in the same plane, and the first direction and the second direction are opposite.

[0012] Optionally, the first pipeline and the second pipeline are arranged in a staggered manner.

[0013] Optionally, the first pipeline and the second pipeline are both parallel to the horizontal plane.

[0014] Optionally, the gas outlet directions of the first pipeline and the second pipeline are tangent to the non-central area of ​​the upper dome.

[0015] Optionally, the first temperature control component also includes a second layer of pipeline groups, which are arranged above the first layer of pipeline groups, and the second layer of pipeline groups includes a plurality of third pipelines whose air outlet directions are along a third direction and a plurality of fourth pipelines whose air outlet directions are along a fourth direction; the third pipelines and the fourth pipelines are located in the same plane, and the third direction and the fourth direction are opposite and parallel.

[0016] Optionally, the gas outlet directions of the third pipeline and the fourth pipeline are tangent to the central area of ​​the upper dome.

[0017] Optionally, the first-layer pipeline group and the second-layer pipeline group overlap in a top-view direction.

[0018] Optionally, the gas flow rate in the second layer of pipeline group is greater than the gas flow rate in the first layer of pipeline group.

[0019] Optionally, the second temperature control component includes a third layer of pipeline groups, and the air outlet direction of the pipelines of the third layer of pipeline groups is parallel to the surface of the lower dome.

[0020] Optionally, the heating assembly includes: a first heating assembly and a second heating assembly, the first heating assembly is located above the upper dome, and the second heating assembly is located below the lower dome.

[0021] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0022] The present invention sets temperature control components at the edge of the upper dome and the edge of the lower dome respectively to cool the surface of the upper dome and the surface of the lower dome, thereby preventing the reaction process gas from being deposited on the inner surface of the upper dome and the lower dome, and ensuring the heating efficiency and heating uniformity of the wafer through the heat radiation of the upper dome and the lower dome.

[0023] The present invention arranges the temperature control components on both sides of the upper dome or the lower dome in a staggered manner to avoid the collision of the temperature control gases blown out by the temperature control components on both sides of the upper dome or the lower dome, thereby improving the cooling efficiency of the temperature control gas on the surface of the upper dome or the lower dome, and increasing the uniformity of the temperature control components in cooling the surface of the upper dome or the lower dome.

[0024] The present invention makes the air outlet direction of the first layer of pipeline group in the first temperature control component tangent to the non-central area of ​​the upper dome, so that the temperature-control gas blown out by the first layer of pipeline group blows from the edge of the upper dome to the central area of ​​the upper dome, thereby cooling the non-central area of ​​the upper dome; the air outlet direction of the second layer of pipeline group in the first temperature control component is tangent to the central area of ​​the upper dome, so that the temperature-control gas blown out by the second layer of pipeline group moves in the horizontal direction, thereby cooling the central area of ​​the upper dome. At the same time, by making the gas flow rate of the temperature-control gas in the second layer of pipeline group greater than the gas flow rate of the temperature-control gas in the first layer of pipeline group, the temperature-control gas blown out by the first layer of pipeline group is prevented from escaping upward, thereby improving the cooling efficiency of the first temperature control component on the surface of the upper dome. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic structural diagram of the epitaxial device described in the present invention.

[0026] Figure 2 It is a top view of the upper dome in the epitaxial device described in the present invention.

[0027] Figure 3 Schematic diagram of the structure of the first temperature control component in one embodiment of the present invention.

[0028] Figure 4 Schematic diagram of the structure of the first temperature control component in another embodiment of the present invention.

[0029] In the figure, 100-upper dome, 110-first temperature control component, 111-first layer pipeline group, 112-second layer pipeline group, 120-upper air inlet nozzle, 130-upper flange, 140-first heating component, 150-upper temperature meter, 200-lower dome, 210-second temperature control component, 230-lower flange, 240-second heating component, 250-lower temperature meter, 260-lower air inlet nozzle, 310-rotating support shaft, 320-base, 330-wafer. DETAILED DESCRIPTION

[0030] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0031] In the description of the present invention, it should be noted that the terms "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0032] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0033] like Figure 1As shown, it is a schematic diagram of the structure of an epitaxial device according to an embodiment of the present invention. The epitaxial device includes a chamber, a heating component, a rotating support shaft 310 and a base 320. The chamber is used to provide a vacuum environment for reaction, which is used to contain the process gas and the wafer 330 for reaction. The heating component is used to provide the temperature for reaction, which is located outside the chamber and provides heat energy to the chamber by thermal radiation. The chamber includes a side wall, an upper dome 100, a lower dome 200, an upper flange 130 and a lower flange 230. The upper flange 130 is arranged at the edge of the upper dome 100, so that the upper dome 100 is fixed above the side wall; the lower flange 230 is arranged at the edge of the lower dome 200, so that the lower dome 200 is fixed below the side wall; and the upper dome 100 and the lower dome 200 are both made of quartz material, which can transmit most visible light and infrared rays, and can allow the heat radiation of the heating component to enter the chamber. The upper dome 100 is a generally circular shape protruding upward, the lower dome 200 is a funnel shape, the side wall is generally annular, and the upper flange and the lower flange are both frames with an outer square and an inner circle. The heating assembly includes an upper first heating assembly 140 located above the upper dome 100 and a lower second heating assembly 240 located below the lower dome 200. The rotating support shaft 310 passes through the lower dome 200 upward from the bottom of the lower dome 200 and extends into the chamber. The rotating support shaft 310 is used to support the base 320 and can rotate and lift. The base 320 is used to carry the wafer 330, and the upper surface of the wafer 330 is completely exposed to the thermal radiation of the first heating assembly 140. An upper temperature meter 150 and a lower temperature meter 250 for detecting the temperature near the base 320 are also provided outside the chamber.

[0034] Since the reacting process gas completes the deposition reaction under the heating condition, while the wafer 330 in the chamber is radiantly heated, the reacting process gas will also be deposited on the lower surface of the upper dome 100 and the upper surface of the lower dome 200 to form sediment particles; the sediment particles on the lower surface of the upper dome 100 and the upper surface of the lower dome 200 will affect the heating efficiency of the heating component in the chamber, and will affect the uniformity of light transmission of the upper dome 100 and the lower dome 200, thereby affecting the uniformity of heat radiation passing through the upper dome 100 and the lower dome 200 to heat the wafer 330 in the chamber. At the same time, the falling of the sediment particles from the lower surface of the upper dome 100 will also affect the quality of the epitaxial layer deposition on the surface of the wafer 330.

[0035] For the deposition process, in order to prevent the reaction process gas from being deposited on the lower surface of the upper dome 100 and the upper surface of the lower dome 200, the present invention sets a temperature control component outside the chamber to purge the temperature control gas outside the chamber. The temperature control component includes: a first temperature control component 110 and a second temperature control component 210. The first temperature control component 110 is arranged on the upper flange 130, and its gas outlet direction is to purge the central area of ​​the upper dome 100 along the upper surface edge of the upper dome 100, so as to provide temperature control gas to the upper surface of the upper dome 100 (i.e., the outside of the chamber), so as to achieve temperature control of the surface of the upper dome 100 and prevent the reaction process gas from being deposited on the lower surface of the upper dome 100; the second temperature control component 210 is arranged on the lower flange 230, and its gas outlet direction is to purge the central area of ​​the lower dome 200 along the lower surface edge of the lower dome 200, so as to provide temperature control gas to the lower surface of the lower dome 200 (i.e., the outside of the chamber), so as to achieve temperature control of the surface of the lower dome 200 and prevent the reaction process gas from being deposited on the upper surface of the lower dome 200.

[0036] Further, if Figure 1-Figure 2 As shown, upper air inlet nozzles 120 are symmetrically arranged on the outer sides of the two side walls of the upper flange 130. The upper air inlet nozzles 120 are air inlets of the first temperature control component 110 and can provide temperature control gas for the first temperature control component 110 disposed in the upper flange 130. Lower air inlet nozzles 260 are symmetrically arranged on the outer sides of the two side walls of the lower flange 230. The lower air inlet nozzles 260 serve as air inlets of the second temperature control component 210 and can provide temperature control gas for the second temperature control component 210 disposed in the lower flange 230. Further, the upper air inlet nozzles 120 are arranged on the side walls of the two opposite short sides of the outer square inner circle frame. Similarly, the lower air inlet nozzles 260 are also arranged on the side walls of the two opposite short sides of the outer square inner circle frame.

[0037] For details, please refer to Figure 3 , is a schematic diagram of the structure of the first temperature control component of an embodiment of the present invention. Figure 3 As shown, the first temperature control assembly 110 includes: a first layer of pipeline group 111. The first layer of pipeline group 111 is arranged inside the upper flange 130, including: a plurality of first pipelines arranged side by side and a plurality of second pipelines arranged side by side. Figure 2 , a plurality of the first pipelines and a plurality of the second pipelines are respectively arranged at both ends of the upper flange 130 and arranged in the same plane, that is, the first pipelines and the second pipelines are at the same height in the upper flange 130. One end of each of the first pipelines is connected to the upper air inlet nozzle 120 on one side of the upper flange 130, and the other end is arranged at the edge of the upper dome 100, so that the temperature-controlled gas blown out by the first pipeline is blown along the first direction (such as Figure 2One end of each second pipeline is connected to the upper air inlet nozzle 120 on the other side of the upper flange 130, and the other end is arranged at the edge of the upper dome 100, so that the temperature-controlled gas blown out by it moves in a second direction (such as Figure 2 The upper surface of the upper dome 100 is purged by the plurality of first pipelines and the plurality of second pipelines to cool the upper dome 100.

[0038] In a preferred embodiment, the first pipeline and the second pipeline are staggered so that the temperature-control gas blown out from the first pipeline along the first direction can be blown from the left edge of the upper dome 100 to the right edge of the upper dome 100, and the temperature-control gas blown out from the second pipeline along the second direction can be blown from the right edge of the upper dome 100 to the left edge of the upper dome 100, thereby preventing the temperature-control gas blown out from the first pipeline along the first direction from colliding with the temperature-control gas blown out from the second pipeline along the second direction, thereby increasing the coverage area of ​​the upper surface of the upper dome 100 by the temperature-control gas, increasing the cooling efficiency, ensuring that the surface temperature of the upper dome 100 is uniform, and achieving uniform cooling of the surface of the upper dome 100.

[0039] Specifically, the second temperature control assembly 210 includes: a third layer of pipeline group, the third layer of pipeline group is arranged in the lower flange 230, including: a plurality of fifth pipelines arranged side by side and a plurality of sixth pipelines arranged side by side. The plurality of fifth pipelines and the plurality of sixth pipelines are respectively arranged at both ends of the lower flange 230 and are arranged in the same plane. One end of each of the fifth pipelines is connected to the lower air inlet nozzle 260 on one side of the lower flange 230, and the other end is arranged at the edge of the lower dome 200, so that the temperature control gas blown out can move along the surface of the lower dome 200 (i.e., as shown in FIG. 2 ). Figure 1 One end of each of the sixth pipelines is connected to the lower air inlet nozzle 260 on the other side of the lower flange 230, and the other end is arranged at the edge of the lower dome 200, so that the temperature-controlled gas blown out can move along the surface of the lower dome 200 (i.e., Figure 1 The lower surface of the lower dome 200 is purged by a plurality of fifth pipelines and a plurality of sixth pipelines disposed on both sides of the lower flange 230 to complete the temperature control of the lower dome 200.

[0040] In a preferred embodiment, the gas outlet direction of the third layer pipeline group is parallel to the surface of the lower dome 200, so that the temperature-controlled gas in the fifth pipeline or the sixth pipeline is blown along the surface of the lower dome 200 from the edges on both sides of the lower dome 200 to the central area of ​​the lower dome 200, so that the temperature-controlled gas can more easily cover the surface of the lower dome 200.

[0041] In a preferred embodiment, the fifth pipeline and the sixth pipeline are arranged in a staggered manner, so that the path of the temperature-control gas blown out of the fifth pipeline and the path of the temperature-control gas blown out of the sixth pipeline do not overlap on the surface of the lower dome 200, thereby avoiding the collision of the temperature-control gas blown out of the fifth pipeline and the temperature-control gas blown out of the sixth pipeline, and improving the cooling efficiency of the temperature-control gas on the surface of the lower dome 200. That is, the fifth pipeline and the sixth pipeline are arranged in a staggered manner similar to the arrangement of the first pipeline and the second pipeline in the above embodiment to enhance the convection effect of the gas.

[0042] Furthermore, the temperature of the temperature-controlled gas is lower than the temperature of the process gas of the reaction, thereby achieving cooling of the upper dome 100 and the lower dome 200 .

[0043] Embodiment 1

[0044] In this embodiment, Figure 1 As shown, the first pipeline and the second pipeline of the first layer pipeline group 111 are both arranged in the horizontal direction. At this time, the first pipeline and the second pipeline in the upper flange 130 are in the same horizontal plane, which reduces the manufacturing difficulty of the gas path inside the upper flange 130 and reduces the manufacturing cost of the upper flange 130.

[0045] Embodiment 2

[0046] In this embodiment, Figure 3 As shown, the gas outlet directions of the first pipeline and the second pipeline in the first layer pipeline group 111 are both tangent to the non-central area of ​​the upper dome 100. At this time, the temperature-control gas blown out by the first pipeline or the second pipeline can be swept from the bottom edge of the upper dome 100 to the central area of ​​the upper dome 100, reducing the movement resistance of the temperature-control gas on the surface of the upper dome 100; at the same time, the temperature-control gas is easier to cover the curved surface of the upper dome 100, so that the heat exchange between the temperature-control gas and the upper dome 100 is more complete, and better temperature control of the upper dome 100 is achieved.

[0047] Embodiment 3

[0048] In this embodiment, the first temperature control pipeline further includes: a second layer pipeline group 112. Figure 4 , is a schematic diagram of the structure of the first temperature control component in the third embodiment. Figure 4As shown, the second layer pipeline group 112 is arranged inside the upper flange 130 and is located above the first layer pipeline group 111. The second layer pipeline group 112 includes: a plurality of third pipelines arranged side by side on a horizontal plane and a plurality of fourth pipelines arranged side by side on a horizontal plane. The plurality of third pipelines and the plurality of fourth pipelines are respectively arranged on the side walls of two opposite short sides of the outer square inner circle frame of the upper flange 130 and are arranged in the same plane, that is, the plurality of third pipelines and the plurality of fourth pipelines in the upper flange 130 are arranged at the same height. One end of each of the third pipelines is connected to the upper air inlet nozzle 120 on one side of the upper flange 130, and the other end is arranged at the edge of the upper dome 100, so that the temperature-controlled gas blown out by the third pipeline is blown along the third direction (such as Figure 2 One end of each of the fourth pipelines is connected to the upper air inlet nozzle 120 on the other side of the upper flange 130, and the other end is arranged at the edge of the upper dome 100, so that the temperature-controlled gas inside it is blown along the fourth direction (such as Figure 2 The upper dome 100 is further cooled by blowing (from right to left in the middle).

[0049] In a preferred embodiment, the gas outlet directions of the third and fourth pipelines of the second layer pipeline group 112 are tangent to the central area of ​​the upper dome 100, that is, the third and fourth pipelines are parallel to the horizontal plane, that is, they are both arranged on the same horizontal plane, and the horizontal plane is tangent to the central area of ​​the upper dome 100. At this time, the temperature-controlled gas is blown from the edge of the upper dome 100 to the central area of ​​the upper dome 100 along the horizontal direction, so as to cool the central area of ​​the upper dome 100.

[0050] Furthermore, in order to improve the temperature control effect of the second layer pipeline group 112 on the upper dome 100, the third pipeline and the fourth pipeline are arranged in a staggered manner so that the temperature control gas can cover a larger range of the surface of the upper dome 100. At the same time, in order to reduce the difficulty of the process manufacturing of the upper flange 130, the first layer pipeline group 111 and the second layer pipeline group 112 overlap in the top view direction of the epitaxial device. At this time, each of the third pipelines is located directly above its corresponding first pipeline, and each of the fourth pipelines is located directly above its corresponding second pipeline.

[0051] Furthermore, the gas flow rate of the temperature-control gas in the second-layer pipeline group 112 is greater than the gas flow rate of the temperature-control gas in the first-layer pipeline group 111, so as to prevent the temperature-control gas blown out of the first-layer pipeline group 111 from escaping upward, affecting the contact between the temperature-control gas blown out of the first-layer pipeline group 111 and the surface of the upper dome 100, thereby affecting the cooling efficiency of the temperature-control gas on the upper dome 100. At this time, the temperature-control gas blown out of the first-layer pipeline group 111 is blown from the edges of both sides of the upper dome 100 to the central area of ​​the upper dome 100. Since the gas flow rate of the temperature-control gas in the second-layer pipeline group 112 is greater, the temperature-control gas blown from the first-layer pipeline group to the central area of ​​the upper dome 100 can no longer move upward, and thus continues to move along the surface of the upper dome 100 (from the central area of ​​the upper dome 100 to the edge of the other side of the upper dome 100), thereby achieving full coverage of the surface of the upper dome 100 and improving the cooling efficiency of the temperature-control gas on the surface of the upper dome 100.

[0052] In summary, the epitaxial equipment provided by the present invention has the function of cooling the upper dome surface and the lower dome surface. By respectively arranging temperature control components at the edge of the upper dome and the edge of the lower dome, the upper dome surface and the lower dome surface can be cooled to prevent the reaction process gas from being deposited on the surface of the upper dome and the lower dome, thereby ensuring the heating efficiency and heating uniformity of the wafer by thermal radiation through the upper dome and the lower dome.

[0053] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An epitaxial device, characterized in that: include: An upper dome and a lower dome, wherein the upper dome and the lower dome are connected to form a chamber, and the chamber is used to accommodate a wafer; A heating assembly, located outside the chamber, for radiating heat into the chamber; An upper flange and a lower flange, wherein the upper flange is arranged at the edge of the upper dome and is used to fix the upper dome to the chamber, and an upper air inlet nozzle is arranged on the outer wall of the upper flange; and the lower flange is arranged at the edge of the lower dome and is used to fix the lower dome to the chamber, and a lower air inlet nozzle is arranged on the outer wall of the lower flange; A first temperature control component and a second temperature control component are arranged outside the chamber, the first temperature control component is arranged on the upper flange, and the first temperature control component is used to provide temperature control gas to the upper surface of the upper dome; the second temperature control component is arranged on the lower flange, and the second temperature control component is used to provide temperature control gas to the lower surface of the lower dome; The first temperature control assembly includes a first layer of pipeline group and a second layer of pipeline group; the gas flow rate in the second layer of pipeline group is greater than the gas flow rate in the first layer of pipeline group; The first layer of pipeline group is arranged in the upper flange, and the first layer of pipeline group includes a plurality of first pipelines whose gas outlet direction is along the first direction and a plurality of second pipelines whose gas outlet direction is along the second direction; The first pipeline and the second pipeline are located in the same plane, and the first direction and the second direction are in opposite directions; The gas outlet directions of the first pipeline and the second pipeline are tangent to the non-central area of ​​the upper dome; The first pipeline and the second pipeline are arranged in a staggered manner.

2. The epitaxial device according to claim 1, characterized in that: The first pipeline and the second pipeline are both parallel to the horizontal plane.

3. The epitaxial device according to claim 1, characterized in that: The second layer of pipeline group is arranged above the first layer of pipeline group, and the second layer of pipeline group includes multiple third pipelines whose air outlet direction is along the third direction and multiple fourth pipelines whose air outlet direction is along the fourth direction; the third pipelines and the fourth pipelines are located in the same plane, and the third direction and the fourth direction are opposite and parallel.

4. The epitaxial device according to claim 3, characterized in that: The gas outlet directions of the third pipeline and the fourth pipeline are tangent to the central area of ​​the upper dome.

5. The epitaxial device according to claim 3, characterized in that: The first layer of pipeline groups overlaps with the second layer of pipeline groups in a top view direction.

6. The epitaxial device according to claim 1, characterized in that: The second temperature control component includes a third layer of pipeline groups, and the air outlet direction of the pipelines of the third layer of pipeline groups is parallel to the surface of the lower dome.

7. The epitaxial device according to claim 1, characterized in that: The heating assembly includes: a first heating assembly and a second heating assembly, wherein the first heating assembly is located above the upper dome, and the second heating assembly is located below the lower dome.

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