Humidity-controllable on-chip testing device and method thereof
Through the humidity control technology of the on-chip test device, the mixing of dry gas and water vapor and humidity sensor monitoring are used to solve the problem of imprecise humidity control in traditional test devices, and efficient and accurate testing of semiconductor devices under different humidity conditions is achieved.
Patent Information
- Application Number
- CN202411405181.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-10
- Publication Date
- 2025-01-10
AI Technical Summary
Traditional semiconductor testing devices are difficult to accurately control and quickly adjust the humidity environment, resulting in inaccurate or non-repeatable test results, especially in tests that require long-term or different humidity conditions, and it is difficult to maintain stable humidity conditions, which affects the accuracy of the test and consistency.
A humidity-controllable in-sheet testing device is designed, including a hollow metal device body, a transparent cover, a moderately soft and hard hole plug and a water vapor hose. Humidity control is achieved through the mixing of dry gas and water vapor, and real-time monitoring is combined with a humidity sensor. and adjust to ensure stable humidity in the test environment.
It realizes precise control and rapid adjustment of humidity, improves the accuracy and repeatability of test results, reduces operational difficulty and cost, enhances test efficiency and flexibility, and is suitable for the testing needs of various semiconductor devices.
Smart Images
Figure CN119291431A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of semiconductor device testing, and in particular relates to a humidity controllable semiconductor on-wafer testing device and method thereof. Background Art
[0002] With the rapid development of semiconductor devices and integrated circuits, the testing technology for related devices has become increasingly important. The birth of semiconductor science is generally regarded as the beginning of the world's first transistor invented by three researchers at Bell Labs in the United States in 1947. In fact, as early as the beginning of the last century, some countries had already begun to study the properties and applications of semiconductor materials, but the development was relatively slow due to technological limitations. Later, from the invention of the first transistor in 1947 to the development of the world's first commercial integrated circuit (IC) by Fairchild in the 1960s, the development of the semiconductor industry has been unstoppable over time. Gordon Moore, one of the founders of Intel, proposed Moore's Law, which is world-famous in the computer industry, which means that the number of transistors that can exist on an integrated circuit will double every 18 months. This has had a profound impact on the semiconductor industry since then and even today.
[0003] Semiconductor science has also gone through three generations of development in nearly seventy years. The first generation of semiconductors is represented by materials such as silicon and germanium. The application of silicon has begun since the 1950s and has become a part of the most mature semiconductor industry. Today, more than 90% of semiconductor chips or devices in the world are produced with silicon as the substrate or with silicon as the basic material. The second generation of semiconductors mainly refers to compound semiconductor materials represented by gallium arsenide and indium phosphide, which were put into use in the 1980s. The second generation of semiconductors has a high electron mobility and better performance than silicon devices. They are mainly used for the preparation of high-frequency, high-speed and high-power devices. The third generation of semiconductors is a wide bandgap semiconductor, represented by gallium nitride, silicon carbide, zinc oxide and diamond. The third generation of semiconductors was discovered at the beginning of this century, and its application has gradually emerged in recent years. Due to the characteristics of wide bandgap, high breakdown electric field, high thermal conductivity and other characteristics of third generation semiconductor materials, they are generally used to prepare high-power devices such as high temperature, high voltage and high frequency, and can gradually be applied to various high temperature and high pressure scenarios.
[0004] In the production and preparation process of device chips in the semiconductor industry, the technology for testing is also a crucial link. The performance of a device must be tested with professional and accurate equipment and methods. The importance of testing in mature semiconductor production processes is self-evident. It is a key step to ensure the quality and performance of devices. Semiconductor devices include transistors, integrated circuits, microprocessors, etc. These devices are the basis of various electronic devices, and their performance will directly determine the final reliability and efficiency of various electronic products. In addition, because the structure of modern electronic equipment is becoming more and more complex and the requirements for performance are constantly increasing, and it is necessary to ensure that it can have stability and reliability in long-term operation, accurate and efficient testing of semiconductors has become an increasingly important topic in semiconductor technology. Semiconductor testing is not only a key step to ensure device performance, but also has a very important and far-reaching significance for semiconductor product innovation and technological research. In semiconductor testing, researchers or engineers will obtain a large amount of test data, which helps to deeply understand the working principle and performance of the device, and provide valuable reference for subsequent research and development of the device. Finally, the results of semiconductor testing will also affect the standard setting and quality control of scientific research results. Standard and precise testing processes can help formulate industry norms and standards, and provide certain guidance for the testing methods and processes of similar devices in the future, which can ensure the reliability and stability of scientific research results in practical applications.
[0005] A common device and method in semiconductor testing is to use a probe station to test the relevant performance of the device. The probe station is generally equipped with a precision mechanical arm and probe head, and is equipped with a high-power optical microscope and a corresponding light source, which can achieve precise contact between the probe head and the test point of the semiconductor device; through these contact points, the voltage can be connected to the device; the probe station itself is also divided into a simple manual probe station and a highly automated automatic probe station. More advanced probe stations also include functions such as temperature control, high-frequency testing, and microwave testing. The core principle of this test method is to use the DC or RF probe carried by the probe station to contact the device under test (DUT), and then use related equipment to connect the DC voltage or RF signal to obtain the device performance such as IV characteristics, CV characteristics or S parameters. However, although the probe station technology is quite mature, it still faces some challenges in some special application scenarios, especially for the testing of semiconductor devices whose surfaces are sensitive to humidity.
[0006] The first is the difficulty of humidity control. Traditional probe stations usually only focus on temperature control and have limited control over humidity. However, for some special semiconductor devices, such as gas sensors or certain types of micro-electromechanical systems (MEMS) devices, their performance and reliability are highly dependent on environmental humidity. In these cases, the inability to accurately control the humidity of the test environment will lead to inaccurate or non-repeatable test results. The second is the problem of environmental isolation. Conventional probe stations are usually open, and it is difficult to create a completely isolated test environment. This makes it difficult to maintain stable humidity conditions during the test, especially when long-term testing or comparative testing under different humidity conditions is required. For devices that need to be tested under specific humidity conditions, traditional methods usually require the entire probe station to be placed in a large environmental chamber. This not only increases the cost of the equipment, but also greatly reduces the test efficiency, because each change in humidity conditions requires a long stabilization time. The same type of semiconductor devices may need to be tested under different humidity conditions. It is difficult for traditional probe stations to quickly switch and accurately control different humidity environments, limiting their application flexibility in testing multiple devices. There are also accuracy and consistency issues. Humidity changes may affect the contact resistance between the probe and the device under test, thereby affecting the accuracy and consistency of the test. This problem becomes more prominent when humidity cannot be precisely controlled. Finally, there is the difficulty of long-term reliability testing. Some semiconductor devices require long-term reliability testing under specific humidity conditions. Traditional probe stations have difficulty maintaining a stable humidity environment for a long time, which makes such tests difficult or unreliable.
[0007] In view of the above inconveniences and limitations, it is particularly important to develop a semiconductor testing device that can accurately control the humidity of the test environment. This device not only needs to be able to accurately control and monitor the humidity of the environment, but also needs to be able to quickly adjust the humidity level to meet the testing needs of different types of semiconductor devices. At the same time, it should also be able to seamlessly integrate with the existing probe station system to improve the test efficiency and reliability of the results. The humidity-controlled semiconductor testing device will be able to significantly improve the testing capabilities of humidity-sensitive semiconductor devices and provide important support for the development of the semiconductor industry. Summary of the invention
[0008] The present invention aims to provide an on-wafer testing device and method with controllable humidity, so as to solve the problem of accurately and reliably controlling the humidity stability of the device environment in the current semiconductor testing field.
[0009] In order to solve the above technical problems, the specific technical solutions of the present invention are as follows:
[0010] A humidity controllable on-wafer testing device comprises a device body, a cover, a hole plug, and a water vapor hose;
[0011] The device body is a hollow metal cuboid without an upper surface, and holes for gas entry and gas exhaust are respectively arranged on the front and rear surfaces of the cuboid. Two protruding holes are arranged on one side surface of the cuboid, one of which is used to insert the probe of the humidity sensor, and the other is used to connect a water vapor hose to allow water vapor to enter the inside of the device body, or to insert a hole plug to isolate the outside air; the length and width of the covering are the same as the upper surface of the device body, and the transparent covering is installed on the upper surface of the device body.
[0012] Furthermore, the hole plug is a frustum with moderate hardness and softness.
[0013] Furthermore, the upper surface edge of the device body has protruding screw holes; there are screw holes on the four edges of the cover, and the protruding screw holes on the upper surface edge of the device body are aligned with the screw holes on the cover for connection with the device body.
[0014] Furthermore, the covering is a transparent sheet made of plastic.
[0015] Furthermore, a rubber ring is embedded around one side of the device body of the cover to seal the gas inside the device body.
[0016] The present invention also discloses an on-wafer testing method for semiconductor devices using a humidity-controllable semiconductor testing device, which is characterized by comprising the following steps:
[0017] Step 1, connect the hole for gas to enter the front of the device body to the air inlet pipe, and then connect the hole for gas to be discharged from the back of the device body to the air outlet pipe leading to the probe station for testing the semiconductor; align the screw hole of the cover with the screw hole on the device body, and screw them in to fix them;
[0018] Step 2: Insert the probe of the humidity sensor into a hole protruding from the side of the device body;
[0019] Step 3, turn on the power of the probe station light source and the power switch of the semiconductor analyzer respectively; connect the wiring of the probe holder and the semiconductor analyzer, load the probe on the probe holder, place the probe holder on both sides of the probe station stage, and prepare for the needle drop operation; move the stage carrying the device under test DUT under the microscope, adjust the microscope to find the device under test DUT and the needle of the RF probe and focus to obtain a clear image; perform the needle drop operation on the device under test DUT;
[0020] Step 4: After the needle drop operation is completed, the semiconductor device under test DUT is tested under dry conditions, that is, the ambient humidity is 0%, and the hole plug is inserted into another protruding hole on the side of the device body to form a seal; the gas required for the test is introduced from the air inlet pipeline, and the gas passes through the device body and directly passes to the DUT of the probe station from the air outlet pipeline; after the gas is passed for a period of time, the reading of the humidity sensor inserted into the device body is observed, and when the humidity is 0%, the electrical characteristics of the device under test DUT are tested and analyzed using a semiconductor analyzer;
[0021] Step 5. Then test the DUT in a humid environment, pull out the hole plug, connect the water vapor hose to the protruding hole, and pass water vapor into the water vapor hose. The water vapor enters the device body through the water vapor hose and merges with the introduced gas; observe the humidity sensor reading after passing water vapor for a period of time until the reading stabilizes; if the humidity is greater than the required humidity, increase the gas flow required for the test; if the humidity is less than the required humidity, reduce the gas flow, repeat the observation and adjustment of the gas flow until the humidity stabilizes at the required humidity; use a semiconductor analyzer to test and analyze the electrical characteristics of the DUT under constant humidity.
[0022] The present invention has the following advantages: (1) Precise humidity control: Through the precise mixing of dry gas and water vapor, the humidity of the test environment can be precisely controlled and quickly adjusted to meet the test requirements of different semiconductor devices. (2) High integration: The device is compact in design and easy to integrate with the existing probe station system. The humidity control function can be realized without large-scale modification. (3) Improved test efficiency: Compared with traditional methods, the present device can quickly switch between different humidity environments, greatly reducing test time and cost. (4) Enhanced test accuracy: By creating a stable and controllable humidity environment, the accuracy and repeatability of the test results of humidity-sensitive semiconductor devices are significantly improved. (5) Easy operation: The device has a simple structure, intuitive use method, and is easy for operators to master, reducing the difficulty of operation and training costs. (6) High cost-effectiveness: Compared with large environmental chambers, the present device has a lower cost and occupies less space, and is suitable for laboratories and production environments of various sizes. (7) Strong flexibility: The humidity conditions can be quickly adjusted according to different test requirements, supporting the flexible implementation of multiple test schemes. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 It is a schematic diagram of the structure of the humidity controllable on-wafer test device of the present invention;
[0024] Figure 2 is a schematic diagram of the principle of the testing device described in a specific embodiment of the present invention;
[0025] Figure 3 This is a diagram showing the actual effect of a radio frequency probe dropping on a transistor when testing a diamond MOSFET in a specific embodiment of the present invention;
[0026] Figure 4 It is a result diagram of the DC stress measurement data of diamond MOSFET tested under different humidity conditions in a specific embodiment of the present invention after normalization and logarithm of time;
[0027] Explanation of the markings in the figure: 1. Device body; 2. Cover; 3. Hole plug; 4. Water vapor hose. DETAILED DESCRIPTION
[0028] In order to better understand the purpose, structure and function of the present invention, a humidity controllable on-wafer testing device and method thereof are further described in detail below in conjunction with the accompanying drawings.
[0029] like Figure 1 As shown, the device body 1 in this example is 260mm long, 100mm wide and 80mm high. There is a hole for gas entry at the front and a hole for gas exhaust at the back, with a diameter of 12mm; the two protruding holes on the side have a diameter of 20mm; and there are 8 screw holes on the edge of the upper surface. The length and width of the cover 2 are the same as those of the device body 1, the thickness is 18mm, and the position of the screw holes is the same as that of the device body. The hole plug 3 is made of rubber, 30mm long, with a top radius of 15mm and a bottom radius of 24mm. The water vapor hose 4 is made of polyvinyl chloride (PVC), is pleated and retractable, has an elongated length of 1000mm, and a diameter that matches the holes on the side of the device body.
[0030] The test device selected in this example is a diamond transistor of a wide bandgap semiconductor. The diamond metal-oxide field effect transistor (MOSFET) will have the phenomenon of "current collapse (CC)" and "current enhancement (CE)", which is mainly due to the capture effect near the gate and the absorption of atmospheric components on the device surface; the study shows that the components in the air will bring about performance changes in diamond transistor devices, and the device will show different performances under special gas and air environments and certain bias stresses (see the document Y. Jia et al., "Characterization of Current Collapse and Enhancement of Hydrogen-Terminated Diamond MOSFET Due to Long-Term Trapping Effects," in IEEE Transactions on Electron Devices, doi: 10.1109 / TED.2023.3344560.). At the same time, the content of water vapor in the air determines the humidity of the air. Whether different humidity will also bring about performance changes in diamond transistor devices is also a problem that needs to be considered and verified. Therefore, the device of the present invention is used to test and verify whether the electrical performance of diamond MOSFET is affected under different humidity conditions.
[0031] Step 1: Place the device body on a stable plane and keep it level. Connect the front air inlet hole to the pipeline of the required gas. Then connect the rear air outlet hole to the pipeline of the probe station for testing the semiconductor. Align the screw holes of the cover with the screw holes on the device body, and screw them in to fix them. Pay attention to apply force evenly to ensure the sealing effect.
[0032] Step 2: Insert the probe of the humidity sensor into a hole protruding from the side of the device body.
[0033] Step 3: Turn on the power of the probe station light source and the power switch of the semiconductor analyzer respectively; connect the wiring between the probe holder and the semiconductor analyzer, load the probe on the probe holder, place the probe holder on both sides of the probe station stage, and prepare for the needle drop operation; move the stage carrying the diamond MOSFET under the microscope, adjust the microscope to find the single device and the needle of the RF probe and focus to obtain a clear image; perform the needle drop operation on the MOSFET.
[0034] Step 4: After the needle drop operation is completed, the diamond MOSFET is tested under dry conditions, that is, the ambient humidity is 0%, and the hole plug is inserted into another protruding hole on the side of the device body to form a seal; the gas required for the test is introduced from the air inlet pipe, and the gas passes through the device body and directly passes to the MOSFET of the probe station from the air outlet pipe; after the gas is passed for a period of time, the reading of the humidity sensor inserted into the device body is observed, and when the humidity reaches 0%, the electrical characteristics of the device are tested and analyzed using a semiconductor analyzer.
[0035] Step 5: Then test the diamond MOSFET in a humid environment, pull out the hole plug, connect the water vapor hose to the protruding hole, and let water vapor into the water vapor hose; observe the humidity sensor reading after letting water vapor in for a period of time, and wait until the reading is stable; if the humidity is greater than the required humidity, increase the gas flow required for the test, if the humidity is less than the required humidity, reduce the gas flow, repeat the above steps until the humidity stabilizes at 30%, and use a semiconductor analyzer to test and analyze the change of the diamond MOSFET drain current over time under constant humidity. Use the same method to measure the curve of the diamond MOSFET drain current changing over time when the humidity is 45%, 60%, 75%, and 90%.
[0036] See attached Figure 2 This device achieves precise control of humidity by controlling the mixing ratio of dry gas and water vapor. The main body of the device serves as a mixing chamber, which fully mixes the incoming dry gas with the water vapor input through the water vapor hose. By adjusting the flow rate of the dry gas, the humidity of the mixed gas can be precisely controlled. The transparent cover and sealing design ensure that the mixing process is not affected by the external environment. The humidity sensor monitors the humidity in the cavity in real time and provides a basis for adjustment. Finally, the mixed gas with stable humidity is transported to the probe station through the outlet hole to test the DUT.
[0037] The data obtained from the above example were collated and analyzed, and the variation trend of the diamond MOSFET drain current between 0 and 6000 seconds under different humidity was tested. Figure 4 , which is the result of taking the logarithm of time after normalizing the 0-second data. It can be obtained that the degree of change of the diamond MOSFET current is different under different humidity. The higher the humidity, the less obvious the current change; at the same time, the result of taking the logarithm of time can be analyzed that the higher the humidity, the longer the time it takes for the diamond MOSFET leakage current to stabilize.
[0038] According to the above specific implementation methods, it is explained that the diamond MOSFET device will show different performances in different humidity environments. The humidity-controllable on-wafer testing device and method proposed in the present invention has certain help and guiding significance for the testing of diamond and other similar semiconductor devices in the environment where the humidity needs to be controlled.
[0039] It is to be understood that the present invention is described by some embodiments, and it is known to those skilled in the art that various changes or equivalent substitutions may be made to these features and embodiments without departing from the spirit and scope of the present invention. In addition, under the teachings of the present invention, these features and embodiments may be modified to adapt to specific circumstances and materials without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application are within the scope of protection of the present invention.
Claims
1. A humidity controllable on-wafer testing device, characterized in that: It comprises a device body (1), a cover (2), a hole plug (3), and a water vapor hose (4); The device body (1) is a hollow metal cuboid without an upper surface, and the surfaces in the front and rear directions of the cuboid are respectively provided with holes for gas entry and holes for gas discharge. Two protruding holes are provided on one side of the cuboid, one of which is used to insert a probe of a humidity sensor, and the other is used to connect a water vapor hose (4) to allow water vapor to flow into the inside of the device body (1), or to insert a hole plug (3) to isolate the outside air. The length and width of the cover (2) are the same as the upper surface of the device body (1), and the transparent cover (2) is installed on the upper surface of the device body (1).
2. The humidity controllable on-wafer testing device according to claim 1, characterized in that: The hole plug (3) is a truncated cone with moderate hardness and softness.
3. The humidity controllable on-wafer testing device according to claim 1, characterized in that: The upper edge of the device body (1) has protruding screw holes; the edges of the four sides of the cover (2) have screw holes, and the protruding screw holes on the upper edge of the device body (1) are aligned with the screw holes on the cover (2) for connection with the device body (1).
4. The humidity controllable on-wafer testing device according to claim 1, characterized in that: The covering (2) is a transparent sheet made of plastic.
5. The humidity controllable on-wafer testing device according to claim 1, characterized in that: The cover (2) has a rubber ring embedded around one side of the device body (1) to seal the internal gas of the device body (1).
6. An on-wafer testing method for semiconductor devices using the humidity-controllable semiconductor testing device according to claim 1, characterized in that: The following steps are involved: Step 1, connect the hole for gas inlet in front of the device body (1) to the air inlet pipeline, and then connect the hole for gas outlet in the back of the device body (1) to the air outlet pipeline leading to the probe station for testing the semiconductor; align the screw hole of the cover (2) with the screw hole on the device body (1), and screw them in to fix them; Step 2: insert the probe of the humidity sensor into a hole protruding from the side of the device body (1); Step 3, turn on the power of the probe station light source and the power switch of the semiconductor analyzer respectively; connect the wiring of the probe holder and the semiconductor analyzer, load the probe on the probe holder, place the probe holder on both sides of the probe station stage, and prepare for the needle drop operation; move the stage carrying the device under test DUT under the microscope, adjust the microscope to find the device under test DUT and the needle of the RF probe and focus to obtain a clear image; perform the needle drop operation on the device under test DUT; Step 4: After the needle drop operation is completed, the semiconductor device under test (DUT) is tested under dry conditions, i.e., when the ambient humidity is 0%, the hole plug (3) is inserted into another protruding hole on the side of the device body (1) to form a seal; the gas required for the test is introduced from the air inlet pipeline, and the gas passes through the device body (1) and directly passes to the DUT of the probe station from the air outlet pipeline; after the gas is passed for a period of time, the reading of the humidity sensor inserted into the device body (1) is observed, and when the humidity reaches 0%, the electrical characteristics of the device under test (DUT) are tested and analyzed using a semiconductor analyzer; Step 5, then test the DUT in a humid environment, pull out the hole plug (3), connect the water vapor hose (4) to the protruding hole, and introduce water vapor into the water vapor hose (4). The water vapor enters the device body (1) through the water vapor hose (4) and merges with the introduced gas; after introducing water vapor for a period of time, observe the humidity sensor reading until the reading stabilizes; if the humidity is greater than the required humidity, increase the gas flow required for the test; if the humidity is less than the required humidity, reduce the gas flow, and repeat the observation and adjustment of the gas flow until the humidity stabilizes at the required humidity; use a semiconductor analyzer to test and analyze the electrical characteristics of the DUT under constant humidity.