Silicon-based capacitor, production process and application thereof
By setting the silicon substrate and small bumps in the silicon-based capacitor and combining the micro semiconductor heat dissipation chip and heat dissipation board, the problem of difficulty in dissipating heat of silicon-based capacitors is solved, the heat dissipation effect and protection performance are improved, and the use is extended life.
Patent Information
- Application Number
- CN202411369371.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-01-10
AI Technical Summary
In the process of pursuing high performance and miniaturization, silicon-based capacitors are difficult to effectively dissipate heat due to high integration design, resulting in excessive temperature rise, affecting performance stability and service life.
By setting up a silicon substrate and small bumps, the pressure of the metal sheet and the insulating layer is reduced, the air flowability is increased, and the combination of a micro semiconductor heat dissipation chip and heat dissipation plate is used to improve the heat dissipation effect; at the same time, a ring is set in the packaging frame. The oxygen resin fills the layer to buffer shock and vibration.
It effectively reduces the working temperature of the capacitor, improves the heat dissipation effect, extends the service life of the capacitor, and provides necessary protection when facing external force impacts.
Smart Images
Figure CN119296961A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of capacitor technology, and in particular to silicon-based capacitors, production processes and applications thereof. Background Art
[0002] With the rapid development of electronic technology, the performance requirements for electronic components are increasing, especially in terms of high frequency, high temperature, and high reliability. Silicon-based capacitors, as a type of capacitor based on silicon materials, have gradually become a research hotspot in the field of electronics due to their unique electrical properties and process advantages. Silicon-based capacitors not only have the characteristics of high stability, high reliability, and high density, but can also maintain low loss in high-frequency environments, and are suitable for a variety of application scenarios such as radio frequency circuits and communication equipment. Therefore, in-depth research and optimization of the production process of silicon-based capacitors is of great significance to promoting the development of electronic technology.
[0003] At present, the production process of silicon-based capacitors mainly revolves around semiconductor manufacturing technology, including the selection and processing of substrates, the deposition of metal films and insulating layers, the application of photolithography and etching technology, electrode production and subsequent processing, etc. Among them, the metal-insulator-metal (MIM) structure is a common structural form in silicon-based capacitors, and the capacitance value can be further increased by superimposing multiple layers of MIM structures.
[0004] Although silicon-based capacitors have made significant progress in production technology and performance, the heat dissipation problem caused by their structural design is still a major challenge. Specifically, in the process of pursuing high performance and miniaturization, silicon-based capacitors often adopt a highly integrated design, which makes it difficult to effectively dissipate the heat generated by the capacitor during operation. Due to poor heat dissipation paths and insufficient thermal conductivity of heat dissipation materials, heat easily accumulates inside the capacitor, resulting in excessive temperature rise, which in turn affects the performance stability and service life of the capacitor. Summary of the invention
[0005] The purpose of this application is to solve the problem that silicon-based capacitors often adopt a high-integration design in the process of pursuing high performance and miniaturization, which makes it difficult to effectively dissipate the heat generated by the capacitors during operation, thereby affecting the performance stability and service life of the capacitors. This application provides silicon-based capacitors, production processes and their applications.
[0006] In order to achieve the above-mentioned purpose, this application specifically adopts the following technical solutions: A silicon-based capacitor comprises a packaging frame, wherein a pair of silicon substrates are arranged inside the packaging frame, a plurality of small bumps are fixedly connected to the top and bottom of the silicon substrate, the plurality of small bumps are arranged in a rectangular shape, a metal sheet 1 is fixedly connected to the top of the small bumps, an insulating layer is fixedly connected to the top of the metal sheet 1, a metal sheet 2 is fixedly connected to the top of the insulating layer, an electrode sheet is fixedly connected to one end of the metal sheet 1 and the metal sheet 2, a card slot is symmetrically provided on the inner side of the packaging frame, a pair of electrode contacts are symmetrically fixedly connected to one end of the packaging frame, one end of the electrode sheet is fixedly connected to the electrode contact, and a heat dissipation component is installed at one end of the packaging frame.
[0007] By adopting the above technical solution, by setting the silicon substrate and the small bumps for use together, when multiple silicon substrates are stacked up and down inside the packaging frame, the silicon substrate drives the two layers of small bumps to support each other, thereby effectively reducing the pressure exerted by the adjacent silicon substrates on the metal sheet 2, the insulating layer, and the metal sheet 1, and at the same time increasing the air flow between the two silicon substrates. At the same time, the heat dissipation component is used to dissipate heat into the environment to reduce the operating temperature of the capacitor, thereby effectively improving the heat dissipation effect of the capacitor.
[0008] Furthermore, the two silicon substrates are stacked up and down inside the packaging frame.
[0009] By adopting the above technical solution and arranging two silicon substrates to be stacked up and down, the occupied area when multiple silicon substrates are installed is effectively reduced, and the space utilization rate of the capacitor is improved.
[0010] Furthermore, the heat dissipation component includes a heat dissipation port opened at one end of the packaging frame, a micro semiconductor heat dissipation chip is fixedly connected to the inside of the heat dissipation port, a heat absorption end of the micro semiconductor heat dissipation chip faces the inside of the packaging frame, a heat dissipation plate is fixedly connected to the outside of the packaging frame, and a heat release end of the micro semiconductor heat dissipation chip is attached to the heat dissipation plate.
[0011] By adopting the above technical solution, by setting up the coordinated use of a micro-semiconductor heat dissipation chip and a heat sink, it is convenient to use the heat sink to dissipate the heat generated inside the silicon substrate to the environment through thermal radiation and convection, so as to reduce the operating temperature of the capacitor and effectively improve the heat dissipation effect of the capacitor.
[0012] Furthermore, the four inner corners of the packaging frame are each provided with a filling corner groove, the interior of the filling corner groove is filled with an epoxy resin filling layer, and the small protrusion is installed between the four epoxy resin filling layers and forms a flexible resistance with the epoxy resin filling layers.
[0013] By adopting the above technical solution, by setting up the epoxy resin filling layer and the silicon substrate for use together, it is convenient to utilize the elastic characteristics of the epoxy resin filling layer to form a buffer protection layer between the packaging frame and the silicon substrate, so as to weaken the impact or vibration received by the silicon substrate, protect the silicon substrate from damage, and reduce the impact of mechanical stress on the performance of the capacitor.
[0014] The production process of silicon-based capacitors includes the following steps: S1: First, prepare a silicon substrate, and thoroughly clean and surface treat the silicon substrate. Then, multiple small bumps are fixedly connected on the top and bottom of the silicon substrate. These small bumps are arranged in a rectangular shape. A metal sheet 1 is deposited on the top of the silicon substrate as an electrode of the capacitor. Then, an insulating layer is deposited on the top of the metal sheet 1. Then, a metal sheet 2 is deposited on the top of the metal sheet 1, so that the metal sheet 1, the insulating layer, and the metal sheet 2 form a MIM structure. S2: Then, the insulating layer and the metal sheet 1 and the metal sheet 2 are patterned using photolithography and etching processes to form a desired capacitor structure, and then electrode sheets are formed at one end of the metal sheet 2 and the metal sheet 1 respectively; S3: Then, filling corner grooves are opened at the four inner corners of the packaging frame, and epoxy resin filling layers are filled inside the filling corner grooves, and cured at the same time, and then two silicon substrates are stacked inside the packaging frame, and the silicon substrates are installed between the four epoxy resin filling layers, and at the same time, a flexible resistance is formed with the epoxy resin filling layers; S4: Then one end of the electrode sheet is pulled and embedded into the slot, and the electrode sheet is fixed to one end of the electrode contact by welding, so as to be connected to the rest of the integrated circuit through the electrode contact, so as to integrate the capacitor into the entire semiconductor device; S5: a heat dissipation port is opened at one end of the packaging frame, and a micro semiconductor heat dissipation chip is connected inside the heat dissipation port, and a heat dissipation plate is connected to the outside of the packaging frame, so that the heat dissipation end of the micro semiconductor heat dissipation chip is fitted with the heat dissipation plate to form an effective heat dissipation path.
[0015] Furthermore, the epoxy resin filling layer described in step S3 is filled by vacuum potting technology and cured in an inert gas environment to prevent the epoxy resin filling layer from being oxidized during the curing process and ensure that there are no bubbles and the epoxy resin is evenly distributed.
[0016] Furthermore, the outer surface of the heat sink has a coating for increasing thermal radiation efficiency, the coating is composed of silicone grease with high emissivity, and a thermally conductive interface material is provided between the heat sink and the micro semiconductor heat sink chip to improve thermal conduction efficiency.
[0017] The application of silicon-based capacitors, automotive electronic systems, especially electric vehicles and hybrid vehicles, have extremely high requirements on the performance and reliability of capacitors. These systems will generate a lot of heat during operation and are often faced with extreme temperature and vibration conditions. The heat generated by silicon-based capacitors during voltage fluctuations or startup will be quickly absorbed by the heat sink chip micro-semiconductor heat sink chip, and dissipated to the external environment through the heat sink to maintain the working temperature of the capacitor. When the vehicle is driving on a bumpy road or encounters a sudden impact, the epoxy resin filling layer in the corner groove will provide the necessary buffer and reduce potential damage to the internal structure of the capacitor.
[0018] In summary, the present application includes at least one of the following beneficial effects: 1. By setting the silicon substrate and the small bumps for use together, when multiple silicon substrates are stacked up and down inside the packaging frame, the silicon substrate drives the two layers of small bumps to support each other, thereby effectively reducing the pressure exerted by the adjacent silicon substrates on the metal sheet 2, the insulating layer, and the metal sheet 1, and at the same time increasing the air flow between the two silicon substrates. At the same time, the heat dissipation component is used to dissipate the heat into the environment to reduce the operating temperature of the capacitor, thereby effectively improving the heat dissipation effect of the capacitor.
[0019] 2. By setting up the coordinated use of the micro semiconductor heat dissipation chip and the heat dissipation plate, it is convenient to use the heat dissipation plate to dissipate the heat generated inside the silicon substrate to the environment through thermal radiation and convection, so as to reduce the operating temperature of the capacitor and effectively improve the heat dissipation effect of the capacitor. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 It is a schematic diagram of the three-dimensional structure of the device body in this application.
[0021] Figure 2 It is an exploded view of the main body of the device in this application.
[0022] Figure 3 It is an exploded view of the surface structure of the packaging frame in this application.
[0023] Description of reference numerals: 1. Packaging frame; 2. Silicon substrate; 3. Small bumps; 4. Metal sheet 1; 5. Insulation layer; 6. Metal sheet 2; 7. Electrode sheet; 8. Card slot; 9. Electrode contact; 10. Heat dissipation port; 11. Micro semiconductor heat dissipation chip; 12. Heat dissipation plate; 13. Filling corner groove; 14. Epoxy resin filling layer. DETAILED DESCRIPTION
[0024] The following is combined with Figure 1-3 This application is described in further detail.
[0025] The embodiments of the present application disclose silicon-based capacitors, production processes, and applications thereof.
[0026] Reference Figure 1-Figure 3 , a silicon-based capacitor comprises a packaging frame 1, a pair of silicon substrates 2 are arranged inside the packaging frame 1, a plurality of small bumps 3 are fixedly connected to the top and bottom of the silicon substrate 2, the plurality of small bumps 3 are arranged in a rectangular shape, a metal sheet 1 4 is fixedly connected to the top of the small bump 3, an insulating layer 5 is fixedly connected to the top of the metal sheet 1 4, a metal sheet 2 6 is fixedly connected to the top of the insulating layer 5, an electrode sheet 7 is fixedly connected to one end of the metal sheet 1 4 and the metal sheet 2 6, a card slot 8 is symmetrically provided on the inner side of the packaging frame 1, a pair of electrode contacts 9 are symmetrically fixedly connected to one end of the packaging frame 1, one end of the electrode sheet 7 is fixedly connected to the electrode contact 9, and a heat dissipation component is installed at one end of the packaging frame 1; Wherein, two silicon substrates 2 are stacked up and down inside the packaging frame 1; In addition, the heat dissipation component includes a heat dissipation port 10 opened at one end of the packaging frame 1, a micro semiconductor heat dissipation chip 11 is fixedly connected to the inside of the heat dissipation port 10, a heat absorption end of the micro semiconductor heat dissipation chip 11 faces the inner side of the packaging frame 1, a heat dissipation plate 12 is fixedly connected to the outer side of the packaging frame 1, and a heat release end of the micro semiconductor heat dissipation chip 11 is in contact with the heat dissipation plate 12.
[0027] When in use, first, when the capacitor is connected to the circuit through the electrode contact 9, the electrode sheet 7 collects the charge from the power source and stores it in the electric field formed between the metal sheet 1 4 and the metal sheet 2 6, and then when discharging, the stored charge is released back to the circuit through the electrode sheet 7; During this process, the operation of the capacitor generates heat, and because the two stacked silicon substrates 2 are supported by two small bumps 3, the pressure exerted by the upper silicon substrate 2 on the metal sheet 2 6 is reduced. At the same time, because the two small bumps 3 support each other, a gap is generated between the two silicon substrates 2 to improve the air circulation between the two silicon substrates 2, thereby improving the heat absorption efficiency of the micro semiconductor heat dissipation chip 11 and the air inside the silicon substrate 2; At this time, the heat absorbing end of the micro-semiconductor heat dissipation chip 11 is arranged to face the inside of the packaging frame 1, and the heat accumulated inside the packaging frame 1 is absorbed. At the same time, the heat releasing end of the micro-semiconductor heat dissipation chip 11 is arranged to fit with the heat dissipation plate 12, so that the micro-semiconductor heat dissipation chip 11 transfers the absorbed heat to the heat dissipation plate 12, and the contact area between the heat releasing end of the micro-semiconductor heat dissipation chip 11 and the external air is increased through the heat dissipation plate 12. At the same time, the heat dissipation plate 12 is used to dissipate heat to the environment through thermal radiation and convection, so as to reduce the operating temperature of the capacitor, thereby effectively improving the heat dissipation effect of the capacitor.
[0028] Reference Figure 1-Figure 3The four inner corners of the packaging frame 1 are each provided with a filling corner groove 13 , the interior of the filling corner groove 13 is filled with an epoxy resin filling layer 14 , and the small bumps 3 are installed between the four epoxy resin filling layers 14 and form a flexible resistance with the epoxy resin filling layers 14 .
[0029] During use, when the capacitor is subjected to external impact or vibration, the flexible resistance of the epoxy resin filling layer 14 is set to absorb part of the impact force transmitted to the silicon substrate 2 by the packaging frame 1, thereby protecting the silicon substrate 2 from damage. At the same time, the high elasticity of the epoxy resin filling layer 14 can provide continuous buffering support and reduce the impact of mechanical stress on the performance of the capacitor.
[0030] The production process of silicon-based capacitors includes the following steps: S1: First, prepare a silicon substrate 2, and thoroughly clean and surface treat the silicon substrate 2, then fix and connect a plurality of small bumps 3 on the top and bottom of the silicon substrate 2, and the small bumps 3 are arranged in a rectangular shape, and deposit a metal sheet 1 4 on the top of the silicon substrate 2 as an electrode of the capacitor, then deposit an insulating layer 5 on the top of the metal sheet 1 4, and then deposit a metal sheet 2 6 on the top of the metal sheet 1 4, so that the metal sheet 1 4, the insulating layer 5, and the metal sheet 2 6 form a MIM structure; S2: Then, the insulating layer 5 and the metal sheet 1 4 and the metal sheet 2 6 are patterned using photolithography and etching processes to form a desired capacitor structure, and then electrode sheets 7 are formed at one end of the metal sheet 2 6 and the metal sheet 1 4 respectively; S3: Then, fill corner grooves 13 are opened at the four corners of the inner side of the packaging frame 1, and epoxy resin filling layers 14 are filled in the filling corner grooves 13, and cured at the same time, and then two silicon substrates 2 are stacked in the packaging frame 1, and the silicon substrates 2 are installed between the four epoxy resin filling layers 14, and at the same time form a flexible resistance with the epoxy resin filling layers 14; S4: Then one end of the electrode sheet 7 is pulled and embedded into the slot 8, and the electrode sheet 7 is fixed to one end of the electrode contact 9 by welding, so as to be connected to the rest of the integrated circuit through the electrode contact 9, so as to integrate the capacitor into the entire semiconductor device; S5: A heat dissipation port 10 is opened at one end of the packaging frame 1, and a micro semiconductor heat dissipation chip 11 is connected inside the heat dissipation port 10, and a heat dissipation plate 12 is connected to the outside of the packaging frame 1, so that the heat dissipation end of the micro semiconductor heat dissipation chip 11 is fitted with the heat dissipation plate 12 to form an effective heat dissipation path.
[0031] In the production process of silicon-based capacitors, the epoxy resin filling layer 14 in step S3 is filled by vacuum potting technology and cured in an inert gas environment to prevent the epoxy resin filling layer 14 from being oxidized during the curing process to ensure that there are no bubbles and the epoxy resin is evenly distributed.
[0032] The production process of silicon-based capacitors, the outer surface of the heat sink 12 has a coating that increases the thermal radiation efficiency, the coating is composed of silicone grease with high emissivity, and a thermal conductive interface material is provided between the heat sink 12 and the micro semiconductor heat sink chip 11 to improve the thermal conduction efficiency.
[0033] The application of silicon-based capacitors, automotive electronic systems, especially electric vehicles and hybrid vehicles, have extremely high requirements on the performance and reliability of capacitors. These systems will generate a lot of heat during operation and are often faced with extreme temperature and vibration conditions. The heat generated by silicon-based capacitors during voltage fluctuations or startup will be quickly absorbed by the heat sink chip micro-semiconductor heat sink chip 11, and dissipated to the external environment through the heat sink 12 to maintain the working temperature of the capacitor. When the vehicle is driving on a bumpy road or encounters a sudden impact, the epoxy resin filling layer 14 in the filling angle groove 13 will provide the necessary buffer to reduce potential damage to the internal structure of the capacitor.
[0034] The implementation principle of the silicon-based capacitor, production process and application of this embodiment is as follows: first, when the capacitor is connected to the circuit through the electrode contact 9, the electrode sheet 7 collects the charge from the power supply and stores it in the electric field formed between the metal sheet 1 4 and the metal sheet 2 6, and then when discharging, the stored charge is released back to the circuit through the electrode sheet 7, and at this time, the storage and release of the charge generates corresponding working heat in the capacitor; At the same time, by arranging two stacked silicon substrates 2, the two layers of small bumps 3 are driven to form a mutual support, thereby reducing the extrusion force on the metal sheet 1 4 and the insulating layer 5 and the metal sheet 2 6 between the two silicon substrates 2, and utilizing the gap between the two layers of small bumps 3 to improve the air circulation inside the packaging frame 1, so as to improve the heat absorption efficiency of the heat absorption end of the micro semiconductor heat dissipation chip 11 to the air inside the silicon substrate 2; Then, the heat dissipation end of the micro semiconductor heat dissipation chip 11 cooperates with the heat dissipation plate 12 to exchange heat between the working heat inside the packaging frame 1 and the external air, and at the same time, the heat dissipation plate 12 dissipates the heat to the environment through heat radiation and convection to reduce the working temperature of the capacitor; Then, when the capacitor is subjected to external impact or vibration, the epoxy resin filling layer 14 is used to form an elastic buffer layer between the packaging frame 1 and the silicon substrate 2 to absorb part of the impact force transmitted from the packaging frame 1 to the silicon substrate 2. At the same time, the high elasticity of the epoxy resin filling layer 14 can provide continuous buffer support and reduce the impact of mechanical stress on the performance of the capacitor.
Claims
1. A silicon-based capacitor, comprising a packaging frame (1), characterized in that: A pair of silicon substrates (2) are arranged inside the packaging frame (1); the top and bottom of the silicon substrate (2) are fixedly connected to a plurality of small bumps (3); the plurality of small bumps (3) are arranged in a rectangular shape; the top of the small bumps (3) is fixedly connected to a metal sheet (4); the top of the metal sheet (4) is fixedly connected to an insulating layer (5); the top of the insulating layer (5) is fixedly connected to a metal sheet (6); one end of the metal sheet (4) and the metal sheet (6) are fixedly connected to an electrode sheet (7); a card slot (8) is symmetrically provided on the inner side of the packaging frame (1); a pair of electrode contacts (9) are symmetrically fixedly connected to one end of the packaging frame (1); one end of the electrode sheet (7) is fixedly connected to the electrode contact (9); and a heat dissipation component is installed at one end of the packaging frame (1).
2. The silicon-based capacitor according to claim 1, characterized in that: The two silicon substrates (2) are stacked up and down inside the packaging frame (1).
3. The silicon-based capacitor according to claim 1, characterized in that: The heat dissipation component comprises a heat dissipation port (10) opened at one end of a packaging frame (1), a micro semiconductor heat dissipation chip (11) is fixedly connected to the interior of the heat dissipation port (10), a heat absorption end of the micro semiconductor heat dissipation chip (11) faces the inside of the packaging frame (1), a heat dissipation plate (12) is fixedly connected to the outside of the packaging frame (1), and a heat release end of the micro semiconductor heat dissipation chip (11) is in contact with the heat dissipation plate (12).
4. The silicon-based capacitor according to claim 1, characterized in that: Filling corner grooves (13) are provided at the four inner corners of the packaging frame (1), the interior of the filling corner grooves (13) is filled with epoxy resin filling layers (14), and the small protrusions (3) are installed between the four epoxy resin filling layers (14) and form a flexible resistance with the epoxy resin filling layers (14).
5. A production process for silicon-based capacitors, applicable to the silicon-based capacitors described in claims 1-4 above, characterized in that: The process includes the following steps: S1: First, a silicon substrate (2) is prepared, and the silicon substrate (2) is thoroughly cleaned and surface treated, and then a plurality of small bumps (3) are fixedly connected to the top and bottom of the silicon substrate (2), and these small bumps (3) are arranged in a rectangular shape, and a metal sheet 1 (4) is deposited on the top of the silicon substrate (2) as an electrode of a capacitor, and then an insulating layer (5) is deposited on the top of the metal sheet 1 (4), and then a metal sheet 2 (6) is deposited on the top of the metal sheet 1 (4), so that the metal sheet 1 (4) and the insulating layer (5) and the metal sheet 2 (6) form a MIM structure; S2: Then, the insulating layer (5) and the metal sheet 1 (4) and the metal sheet 2 (6) are patterned using photolithography and etching processes to form a desired capacitor structure, and then electrode sheets (7) are formed at one end of the metal sheet 2 (6) and the metal sheet 1 (4). S3: Then, filling corner grooves (13) are opened at the four inner corners of the packaging frame (1), and epoxy resin filling layers (14) are filled inside the filling corner grooves (13), and cured at the same time. Then, two silicon substrates (2) are stacked inside the packaging frame (1), and the silicon substrates (2) are installed between the four epoxy resin filling layers (14), and at the same time, form a flexible resistance with the epoxy resin filling layers (14); S4: then pulling one end of the electrode sheet (7) to be embedded in the slot (8), and welding the electrode sheet (7) to one end of the electrode contact (9) to fix them, thereby connecting them to the rest of the integrated circuit through the electrode contact (9), so as to facilitate integration of the capacitor into the entire semiconductor device; S5: a heat dissipation port (10) is provided at one end of the packaging frame (1), and a micro semiconductor heat dissipation chip (11) is connected to the inside of the heat dissipation port (10), and a heat dissipation plate (12) is connected to the outside of the packaging frame (1), so that the heat dissipation end of the micro semiconductor heat dissipation chip (11) is in contact with the heat dissipation plate (12), thereby forming an effective heat dissipation path.
6. The production process of silicon-based capacitors according to claim 5, characterized in that: The epoxy resin filling layer (14) described in step S3 is filled by using vacuum potting technology and cured in an inert gas environment to prevent the epoxy resin filling layer (14) from being oxidized during the curing process, thereby ensuring that there are no bubbles and the epoxy resin filling layer is evenly distributed.
7. The production process of silicon-based capacitors according to claim 5, characterized in that: The outer surface of the heat dissipation plate (12) has a coating for increasing thermal radiation efficiency, the coating being composed of silicone grease with high emissivity, and a thermally conductive interface material is provided between the heat dissipation plate (12) and the micro semiconductor heat dissipation chip (11) to improve thermal conduction efficiency.
8. Application of silicon-based capacitors, applicable to the silicon-based capacitors described in claims 1-4 above, characterized in that: Automotive electronic systems, especially electric vehicles and hybrid vehicles, have extremely high requirements on the performance and reliability of capacitors. These systems generate a large amount of heat during operation and are often faced with extreme temperature and vibration conditions. The heat generated by silicon-based capacitors during voltage fluctuations or startup will be quickly absorbed by the heat sink chip micro-semiconductor heat sink chip (11) and dissipated to the external environment through the heat sink plate (12) to maintain the operating temperature of the capacitor. When the vehicle is driving on a bumpy road or encounters a sudden impact, the epoxy resin filling layer (14) in the filling angle groove (13) will provide the necessary buffer to reduce potential damage to the internal structure of the capacitor.