Dual-polarization tunable unit based on embedded structure, metasurface and antenna housing

Abstract

The invention discloses a dual-polarization tunable unit based on an embedded structure, a metasurface and an antenna housing. The tunable unit structurally comprises a top layer structure, a middle layer structure, a bottom layer structure and a dielectric layer, the top layer structure is composed of a square ring type metal sheet structure and a cross dipole structure; the bottom layer structure is the same as the top layer structure; the middle layer structure is a crisscross strip-shaped metal sheet structure; active devices are symmetrically embedded in gaps of the crossed dipole structures of the top-layer structure and the bottom-layer structure; the active device is provided with a positive electrode and a negative electrode, one end of the active device is loaded on the square ring type metal patch structure of the top layer structure or the bottom layer structure, and the other end of the active device is loaded on the strip-shaped metal patch structure of the middle layer structure; frequency tuning is realized by adjusting the voltage of the active device. The reconfigurable active frequency selective surface solves the problems of large size and poor flexibility of the reconfigurable active frequency selective surface in the prior art.

Description

Technical Field

[0001] The present invention belongs to the field of communication technology, and in particular relates to a dual-polarization tunable unit, a metasurface and a radome based on an embedded structure. Background Art

[0002] Frequency selective surface (metasurface) is an infinite periodic structure with excellent spatial filtering characteristics. It has shown significant advantages in electromagnetic shielding and radar cross-section performance reduction. It has been widely used in antenna systems, electromagnetic compatibility, stealth and other fields, and is one of the key technologies of 6G. Traditional passive metasurface structures have a defect that once the geometric dimensions of the structure are fixed, its transmission characteristic response remains basically unchanged, which limits the performance of traditional metasurface structures in complex application environments such as electromagnetic compatibility and military stealth.

[0003] At present, an active frequency selective surface with reconfigurable transmission characteristic response is proposed. The active frequency selective surface can better adapt to complex working environments and make up for the shortcomings of traditional metasurface structures. Especially in the application environment of antenna covers, it can protect the antenna from the influence of strong in-band electromagnetic pulses in the shielding state, while ensuring the communication transmission performance in the transmission state. However, most of the current reconfigurable active frequency selective surface structures are large in size and cannot be integrated into more compact mobile devices or satellite terminals, and have poor application flexibility.

[0004] In order to solve the problems of large size and poor flexibility of reconfigurable active frequency selective surfaces, a dual-polarization tunable unit, metasurface and antenna cover based on embedded structure are proposed. Summary of the invention

[0005] The embodiments of the present invention propose a dual-polarization tunable unit, a metasurface and a radome based on an embedded structure, so as to at least solve the problems of large volume and poor flexibility of the reconfigurable active frequency selective surface existing in the related art.

[0006] According to an embodiment of the present invention, a dual-polarization tunable unit based on an embedded structure is provided, and the structure includes: a top structure, a middle layer structure, a bottom structure and a dielectric layer; the top structure is composed of a square ring metal sheet structure and a cross-shaped cross dipole structure; the bottom structure adopts the same structure as the top structure; the middle layer structure is a cross-shaped strip metal sheet structure; the dielectric layer is composed of two parts, one part is located between the top structure and the middle layer structure, and the other part is located between the bottom structure and the middle layer structure;

[0007] Active devices are symmetrically embedded in the gap of the cross-dipole structure of the top structure and the bottom structure; the active device has a positive electrode and a negative electrode, one end is loaded on the square ring metal patch structure of the top structure or the bottom structure, and the other end is loaded on the strip metal patch structure of the middle layer structure; frequency tuning is achieved by adjusting the voltage of the active device.

[0008] In an exemplary embodiment, gaps are reserved at the center positions of the four sides of the square ring-shaped metal sheet structure for connection with the cross-shaped cross-dipole structure.

[0009] In an exemplary embodiment, the cross-type cross-dipole structure is welded at the reserved notch position of the square ring-type metal sheet structure; the cross-type cross-dipole structure has a groove that increases the path length through which the surface current flows.

[0010] In an exemplary embodiment, the grooves of the cross-dipole structure are calculated based on the degree of miniaturization design and / or frequency characteristic response and / or oblique incidence performance.

[0011] In an exemplary embodiment, the groove of the cross-type cross-dipole structure is calculated according to the miniaturization design degree and / or the frequency characteristic response and / or the oblique incidence performance, including the steps of:

[0012] Calculating a miniaturization performance index based on the relationship between the degree of miniaturization design and the number of grooves and / or the depth of grooves;

[0013] Calculating a bandwidth performance index based on the relationship between the frequency characteristic response range and the number of grooves and / or the groove depth;

[0014] The incident performance index is calculated based on the relationship between the oblique incident performance and the groove deflection angle;

[0015] Calculate the overall performance index of the groove according to the miniaturization performance index and / or the bandwidth performance index and / or the incidence performance index;

[0016] The grooves of the cross-type cross-dipole structure are calculated according to the relationship between the overall performance index of the grooves and the number of grooves, the groove depth, and the groove deflection angle.

[0017] In an exemplary embodiment, the width of the cross-shaped metal strip structure of the middle layer structure is greater than the width of the cross-shaped cross-dipole structure of the top structure and the bottom structure, and the position of the cross-shaped metal strip structure of the middle layer structure overlaps with the position of the cross-shaped cross-dipole structure of the top structure and the bottom structure.

[0018] In an exemplary embodiment, the metal patches of the top layer structure, the bottom layer structure and the middle layer structure have central symmetry.

[0019] In an exemplary embodiment, the frequency tuning is achieved by adjusting the voltage of the active device, comprising the steps of:

[0020] Calculate the transmission characteristic response fluctuation value according to the influence of different polarization directions on the transmission characteristic response;

[0021] Calculate the functional relationship between the voltage and the transmission characteristic response fluctuation value according to the influence of the voltage of the active device on the transmission characteristic response fluctuation;

[0022] Calculate the voltage value with the minimum transmission characteristic response fluctuation value according to the functional relationship between the voltage and the transmission characteristic response fluctuation value;

[0023] The bias voltage of the active device varactor diode is adjusted according to the voltage value with the smallest transmission characteristic response fluctuation value to achieve frequency tuning in different polarization directions.

[0024] According to another embodiment of the present invention, a dual-polarization tunable metasurface based on an embedded structure is provided, which is composed of dual-polarization tunable units based on an embedded structure arranged according to a preset period and connected to each other.

[0025] According to another embodiment of the present invention, a dual-polarization tunable radome based on an embedded structure is provided, wherein the surface of the radome is covered with a dual-polarization tunable metasurface based on an embedded structure, and the antenna in the radome is not affected by strong in-band electromagnetic pulses.

[0026] The dual-polarization tunable unit, metasurface and radome based on the embedded structure of the present invention have the following advantages:

[0027] (1) The present invention utilizes the principle of multilayer filters, designs a multilayer coupled artificial electromagnetic surface structure, and constructs multiple magnetic resonances. Compared with the single resonance mode of the traditional single-layer absorber, it can effectively improve the stable transmission response of the filter in the oblique incidence angle range of 0-60°.

[0028] (2) The metal patches of the top layer structure, bottom layer structure and middle layer structure have central symmetry. Compared with the traditional metasurface structure, the completely central symmetric cellular structure and feeding network can obtain almost consistent transmission and shielding responses under different polarizations, reducing the difficulty of tuning.

[0029] (3) The present invention calculates the grooves of the cross-type cross dipole structure according to the degree of miniaturization design and / or the frequency characteristic response and / or the oblique incidence performance. Compared with the traditional reconfigurable metasurface structure, it can effectively increase the path length through which the surface current flows, realize the miniaturization of the structure, reduce power consumption, and extend battery life.

[0030] (4) The present invention adopts a new type of embedded structure feeding network and combines it with a varactor diode to achieve the transmission broadband reconfigurable performance of the dual-polarization metasurface. Compared with the traditional reconfigurable metasurface structure, it can effectively realize frequency tuning under different polarization states and improve the reconfigurability and application flexibility of the metasurface. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is a schematic structural diagram of a dual-polarization tunable unit based on an embedded structure according to an embodiment of the present invention;

[0032] Figure 2 is a flow chart of calculating the groove of the cross-type cross-dipole structure according to an embodiment of the present invention;

[0033] Figure 3 is a flow chart of realizing frequency tuning by adjusting the voltage of active devices according to an embodiment of the present invention;

[0034] Figure 4 is an equivalent circuit diagram of a dual-polarization tunable unit based on an embedded structure according to an embodiment of the present invention;

[0035] Figure 5 is a CST simulation result diagram of an embodiment of the present invention;

[0036] Figure 6 It is a performance diagram of the dual-polarization tunable unit structure of the embodiment of the present invention under different oblique incidence angles. DETAILED DESCRIPTION

[0037] The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several changes and improvements can be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0038] An embodiment of the present invention provides a dual-polarization tunable unit based on an embedded structure, the structural diagram of which is shown in FIG. Figure 1 As shown, the structure comprises: a top structure (1), an intermediate layer structure (2), a bottom structure (3) and a dielectric layer (4); the top structure (1) is composed of a square ring metal sheet structure (11) and a cross-shaped cross dipole structure (12); the bottom structure (3) adopts the same structure as the top structure; the intermediate layer structure (2) is a cross-shaped strip metal sheet structure; the dielectric layer is composed of two parts, one part (41) is located between the top structure and the intermediate layer structure, and the other part (42) is located between the bottom structure and the intermediate layer structure;

[0039] An active device (5) is symmetrically embedded in the gap between the cross-dipole structures of the top structure and the bottom structure; the active device has a positive electrode and a negative electrode, one end of which is loaded on the square ring metal patch structure of the top structure or the bottom structure, and the other end is loaded on the strip metal patch structure of the middle structure; frequency tuning is achieved by adjusting the voltage of the active device.

[0040] The embodiment of the present invention adopts an embedded structural feeding network and a structural cell collaborative integrated design to achieve simultaneous control of different polarization states. The design is approximately completely centrally symmetrical, and combined with the method of orthogonal feeding network, the consistency of transmission characteristics under different polarization states is achieved. A functional manipulation implementation module for different polarization states is provided. Functional manipulation of different polarization states is achieved through embedded feeding network technology. The structure achieves effective tunability in a wide band range (3.3-1.9GHz) by controlling the bias voltage of the varactor diode. By means of the technical means of bending the metal strip, the length of the current flowing through is increased, thereby achieving the miniaturization of the structure and effectively controlling the center frequency of the transmission passband to move to a low frequency. By reducing the size of the metasurface element, more functions can be integrated and space can be saved, which is crucial for compact devices and systems (such as mobile communication devices and satellite communication terminals). In addition, the miniaturized design reduces weight, improves the mobility and efficiency of weight-sensitive applications such as mobile devices, drones and spacecraft, while reducing power consumption and extending battery life. The miniaturized design also increases the flexibility of the metasurface, making it easier to integrate into different types of devices, while reducing material and manufacturing costs, and promoting the cost-effectiveness of the technology.

[0041] In an exemplary embodiment, gaps are reserved at the center positions of the four sides of the square ring-shaped metal sheet structure for connection with the cross-shaped cross-dipole structure.

[0042] In an exemplary embodiment, the cross-shaped cross-dipole structure is welded at the reserved notch position of the square ring-shaped metal sheet structure; the cross-shaped cross-dipole structure has a groove (6) for increasing the path length of the surface current flowing through, such as Figure 1 shown.

[0043] In an exemplary embodiment, the grooves of the cross-type cross-dipole structure are calculated according to the miniaturization design degree and / or the frequency characteristic response and / or the oblique incidence performance, as shown in the flow chart. Figure 2 As shown, the steps include:

[0044] Step S01, calculating a miniaturization performance index according to a relationship between a miniaturization design degree and the number of grooves and / or the depth of grooves;

[0045] Step S02, calculating a bandwidth performance index according to a relationship between a frequency characteristic response range and the number of grooves and / or the depth of the grooves;

[0046] Step S03, calculating the incident performance index according to the relationship between the oblique incident performance and the groove deflection angle;

[0047] Step S04, calculating the overall performance index of the groove according to the miniaturization performance index and / or the bandwidth performance index and / or the incidence performance index;

[0048] Step S05 , calculating the grooves of the cross-type cross-dipole structure according to the relationship between the overall performance index of the grooves and the number of grooves, the groove depth, and the groove deflection angle.

[0049] In this embodiment, the miniaturization performance index is calculated based on the relationship between the degree of miniaturization design and the number of grooves and / or the groove depth, which is: calculating the miniaturization performance index based on the positive correlation between the degree of miniaturization design and the number of grooves, calculating the miniaturization performance index based on the positive correlation between the degree of miniaturization design and the groove depth, or calculating the miniaturization performance index based on the positive correlation between the degree of miniaturization design and the number of grooves and the groove depth, and the miniaturization performance index is represented by the variable c.

[0050] The bandwidth performance index is calculated based on the relationship between the frequency characteristic response range and the number of grooves and / or the groove depth, which is: calculating the bandwidth performance index based on the positive correlation between the frequency characteristic response range width and the number of grooves, calculating the bandwidth performance index based on the positive correlation between the frequency characteristic response range width and the groove depth, and calculating the bandwidth performance index based on the positive correlation between the frequency characteristic response range width and the number of grooves and the groove depth, any one of which is represented by the variable r.

[0051] Calculating the incident performance index according to the relationship between the oblique incident performance and the groove deflection angle is calculating the incident performance index according to the positive correlation between the oblique incident performance and the groove deflection angle, and the incident performance index is represented by a variable d.

[0052] The method of calculating the overall performance index of the groove according to the miniaturization performance index and / or the bandwidth performance index and / or the incident performance index is to calculate the overall performance index of the groove according to the positive correlation between the miniaturization performance index and / or the bandwidth performance index and / or the incident performance index and the overall performance index of the groove, and the overall performance index of the groove is represented by the variable h.

[0053] A1 to A7 in Table A represent different implementation methods for calculating the overall performance index of the groove. For ease of expression, the miniaturization performance index c, the bandwidth performance index r, and the incident performance index d are calculated using the method described in any of the above implementation methods.

[0054] Table A Different implementation methods for calculating the overall performance index of the groove

[0055]

[0056]

[0057]

[0058]

[0059]

[0060]

[0061] The grooves of the cross-type cross dipole structure are calculated according to the relationship between the overall performance index of the grooves and the number of grooves, the groove depth, and the groove deflection angle. The number of grooves, the groove depth, and the groove deflection angle are continuously adjusted. The overall performance index of the grooves is calculated according to any one of the items in Table A, and the relationship between the overall performance index of the grooves and the number of grooves, the groove depth, and the groove deflection angle is established. The number of grooves, the groove depth, and the groove deflection angle are adjusted to the number of grooves, the groove depth, and the groove deflection angle corresponding to the maximum value of the overall performance index of the grooves.

[0062] In an exemplary embodiment, the width of the cross-shaped metal strip structure of the middle layer structure is greater than the width of the cross-shaped cross-dipole structure of the top structure and the bottom structure, and the position of the cross-shaped metal strip structure of the middle layer structure overlaps with the position of the cross-shaped cross-dipole structure of the top structure and the bottom structure.

[0063] In an exemplary embodiment, the metal patches of the top layer structure, the bottom layer structure and the middle layer structure have central symmetry.

[0064] In an exemplary embodiment, the frequency tuning is achieved by adjusting the voltage of the active device, as shown in the flow chart. Figure 3 As shown, including:

[0065] Step S11, calculating the transmission characteristic response fluctuation value according to the influence of different polarization directions on the transmission characteristic response;

[0066] Step S12, calculating the functional relationship between the voltage and the transmission characteristic response fluctuation value according to the influence of the voltage of the active device on the transmission characteristic response fluctuation;

[0067] Step S13, calculating the voltage value with the minimum transmission characteristic response fluctuation value according to the functional relationship between the voltage and the transmission characteristic response fluctuation value;

[0068] Step S14: adjusting the bias voltage of the active device varactor diode according to the voltage value with the smallest transmission characteristic response fluctuation value to achieve frequency tuning in different polarization directions.

[0069] In this embodiment, an equivalent circuit model is established to study the insensitive characteristic response of the incident angle and polarization state of the novel reconfigurable artificial electromagnetic surface. The equivalent circuit diagram of the dual-polarization tunable unit based on the embedded structure proposed in the embodiment of the present invention is as follows: Figure 4 As shown. The top and bottom metal patch resonators in the structure are equivalent to the L1, L2 and L4, L5 branches in the circuit respectively, and the middle layer structure is equivalent to the inductor branch L3 in the circuit. In order to achieve the tunable characteristic response of the passband frequency, a varactor diode (i.e., an active device) is installed in the first branch and the second branch respectively, and the first branch is connected in parallel with L2. The equivalent circuit of the varactor diode is a series branch of variable capacitance, resistance and inductance. When the voltage applied to the two ends of the varactor diode changes, the equivalent capacitance value inside the diode also changes, and different voltages correspond to different transmission passband center frequencies.

[0070] The transmission characteristic response fluctuation value is calculated according to the influence of different polarization directions on the transmission characteristic response. The transmission characteristic response fluctuation value is calculated according to the positive correlation between the deviation degree of the transmission characteristic response curve in different polarization directions and the transmission characteristic response fluctuation value. The transmission characteristic response fluctuation value is represented by the variable y.

[0071] The degree of deviation of the transmission characteristic response curve is calculated based on the positive correlation between the maximum difference between the maximum values ​​or minimum values ​​of different curves and the degree of deviation, or calculated based on the positive correlation between the average value of the differences between different curves at multiple frequency sampling points and the degree of deviation, or calculated based on any one or more combinations of the positive correlation between the variance of the differences between different curves at multiple frequency sampling points and the degree of deviation.

[0072] The voltage of the active device is represented by the variable x;

[0073] The functional relationship between voltage and transmission characteristic response fluctuation value calculated according to the influence of voltage of active device on transmission characteristic response fluctuation is to calculate transmission characteristic response fluctuation value under different voltages for many times and obtain the functional relationship between voltage x and transmission characteristic response fluctuation value y through curve simulation, which is expressed as y=f(x).

[0074] The voltage value with the minimum transmission characteristic response fluctuation value calculated according to the functional relationship between voltage and transmission characteristic response fluctuation value is to calculate the minimum value of the function y=f(x) between voltage and transmission characteristic response fluctuation value and thereby obtain the voltage value corresponding to the minimum transmission characteristic response fluctuation value, which is expressed as voltage value Y.

[0075] The method of adjusting the bias voltage of the active device varactor diode according to the voltage value with the smallest transmission characteristic response fluctuation value is to adjust the bias voltage of the active device varactor diode to a voltage value Y or to obtain an adjustment level of the bias voltage according to a relationship between the voltage value Y and a preset bias voltage graded adjustment range and thereby adjust the bias voltage of the active device varactor diode, so as to achieve frequency tuning in different polarization directions.

[0076] In this embodiment, by applying different bias voltages to the varactor diode, a high consistency of the transmission characteristic response under different polarizations in the 3.3-1.9GHz frequency band is achieved. In order to improve the stability at oblique incidence, the present invention adopts a multilayer structure to achieve a stable transmission performance regulation response under large-angle incidence. The structure consists of three layers, and the reconfigurable characteristics of the passband frequency are achieved by changing the bias voltage of the varactor diode. When a 20V reverse bias voltage is applied to the varactor diode, the transmission passband center frequency is located at 3.3GHz, its -3dB passband width is 15%, and the minimum insertion loss is only 0.1dB. When a 3V reverse bias voltage is applied, the transmission passband center frequency is located at 1.9GHz, its -3dB passband width is 10%, and the minimum insertion loss is 0.4dB. Compared with the traditional structure, when the incident angle reaches 60°, the structure can present a filtering characteristic response, and can obtain large-angle characteristics and bandwidth characteristics that the traditional structure does not have.

[0077] In an exemplary embodiment, the proposed structure is verified by ECM calculation and simulation analysis. Figure 5 The CST simulation result diagram of the present invention is shown. It can be seen that the transmission characteristic response of the structure of the embodiment of the present invention is almost consistent when TE polarized waves and TM polarized waves are incident. By changing the bias voltage of the varactor diode, the transmission passband can be tunable from 3.3-1.9 GHz and high transmission efficiency can be maintained.

[0078] like Figure 6 The performance diagram of the structure of the embodiment of the present invention under different oblique incident angles is shown. The performance test of the structure is carried out under TE incident wave. Figure 6 (a) shows the performance of the structure at different incident angles when a voltage of 20 V is applied. Figure 6 (b) shows the performance of the structure at different incident angles with a 3V voltage applied. As shown in the figure, at 0-60° incidence, stable filtering performance responses are achieved when both 20V and 3V voltages are applied. When 20V is applied, the transmission efficiency remains high and the insertion loss is less than 0.5dB. When 3V is applied, the transmission characteristic response at low frequencies is also stable.

[0079] According to another embodiment of the present invention, a dual-polarization tunable metasurface based on an embedded structure is provided, which is composed of the dual-polarization tunable units based on the embedded structure described in the above embodiment arranged according to a preset period and connected to each other.

[0080] According to another embodiment of the present invention, a dual-polarization tunable radome based on an embedded structure is provided, wherein the surface of the radome is covered with the dual-polarization tunable metasurface based on an embedded structure described in the above embodiment, and the antenna in the radome is not affected by strong in-band electromagnetic pulses.

[0081] Of course, those skilled in the art should realize that the above embodiments are only used to illustrate the present invention, and are not intended to limit the present invention. As long as they are within the scope of the present invention, any changes or modifications to the above embodiments will fall within the protection scope of the present invention.

Claims

1. A dual-polarization tunable unit based on an embedded structure, characterized in that: include: Top layer structure, middle layer structure, bottom layer structure and dielectric layer; The top structure is composed of a square ring metal sheet structure and a cross-shaped cross dipole structure; the bottom structure adopts the same structure as the top structure; The middle layer structure is a cross-shaped strip metal sheet structure; The dielectric layer consists of two parts, one part is located between the top layer structure and the middle layer structure, and the other part is located between the bottom layer structure and the middle layer structure; Active devices are symmetrically embedded in the gap of the cross-dipole structure of the top structure and the bottom structure; the active device has a positive electrode and a negative electrode, one end is loaded on the square ring metal patch structure of the top structure or the bottom structure, and the other end is loaded on the strip metal patch structure of the middle layer structure; frequency tuning is achieved by adjusting the voltage of the active device.

2. The dual-polarization tunable unit based on embedded structure according to claim 1, characterized in that: The center positions of the four sides of the square ring-shaped metal sheet structure are reserved with gaps for connection with the cross-shaped cross-dipole structure.

3. The dual-polarization tunable unit based on embedded structure according to claim 1, characterized in that: The cross-shaped cross-dipole structure is welded at the reserved notch position of the square ring-shaped metal sheet structure; the cross-shaped cross-dipole structure has a groove for increasing the path length through which the surface current flows.

4. The dual-polarization tunable unit based on embedded structure according to claim 3, characterized in that: The grooves of the cross-type dipole structure are calculated according to the degree of miniaturization design and / or the frequency characteristic response and / or the oblique incidence performance.

5. The dual-polarization tunable unit based on embedded structure according to claim 4, characterized in that: The method of calculating the groove of the cross-type cross-dipole structure according to the degree of miniaturization design and / or the frequency characteristic response and / or the oblique incidence performance comprises the steps of: Calculating a miniaturization performance index based on the relationship between the degree of miniaturization design and the number of grooves and / or the depth of grooves; Calculating a bandwidth performance index based on the relationship between the frequency characteristic response range and the number of grooves and / or the groove depth; The incident performance index is calculated based on the relationship between the oblique incident performance and the groove deflection angle; Calculate the overall performance index of the groove according to the miniaturization performance index and / or the bandwidth performance index and / or the incidence performance index; The grooves of the cross-type cross-dipole structure are calculated according to the relationship between the overall performance index of the grooves and the number of grooves, the groove depth, and the groove deflection angle.

6. The dual-polarization tunable unit based on embedded structure according to claim 1, characterized in that: The width of the cross-shaped metal sheet strip structure of the middle layer structure is greater than the width of the cross-shaped cross-dipole structure of the top and bottom structures, and the position of the cross-shaped metal sheet strip structure of the middle layer structure overlaps with the position of the cross-shaped cross-dipole structure of the top and bottom structures.

7. The dual-polarization tunable unit based on embedded structure according to claim 1, characterized in that: The metal patches of the top layer structure, the bottom layer structure and the middle layer structure have central symmetry.

8. The dual-polarization tunable unit based on embedded structure according to claim 1, characterized in that: The frequency tuning is achieved by adjusting the voltage of the active device, comprising the steps of: Calculate the transmission characteristic response fluctuation value according to the influence of different polarization directions on the transmission characteristic response; Calculate the functional relationship between the voltage and the transmission characteristic response fluctuation value according to the influence of the voltage of the active device on the transmission characteristic response fluctuation; Calculate the voltage value with the minimum transmission characteristic response fluctuation value according to the functional relationship between the voltage and the transmission characteristic response fluctuation value; The bias voltage of the active device varactor diode is adjusted according to the voltage value with the smallest transmission characteristic response fluctuation value to achieve frequency tuning in different polarization directions.

9. A dual-polarization tunable metasurface based on an embedded structure, characterized in that: The dual-polarization tunable units based on the embedded structure as described in any one of claims 1 to 8 are arranged according to a preset period and connected to each other.

10. A dual-polarization tunable radome based on an embedded structure, characterized in that: The surface of the radome is covered with the dual-polarization tunable metasurface based on the embedded structure as described in claim 9, and the antenna in the radome is not affected by strong in-band electromagnetic pulses.

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