A semiconductor laser with a waveguide layer for suppressing optical catastrophe

Abstract

This invention proposes a semiconductor laser with a lower waveguide layer that suppresses optical catastrophes. The laser comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper cladding layer. By designing the change angle of the bulk modulus and deformation potential of the lower waveguide layer, this invention improves the uniformity of stress distribution and thermal expansion distribution at the interfaces between the lower waveguide layer and the lower cladding layer, the lower waveguide layer and the active layer, and among the interfaces of each layer within the lower waveguide layer, thereby reducing optical catastrophes in the laser.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a semiconductor laser with a waveguide layer for suppressing optical catastrophe. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size.

[0003] There are great differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, with a small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single nitride semiconductor light-emitting diode is in mW level.

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of the nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency decay Droop effect.

[0006] 3) Light-emitting diode is a spontaneous transition radiation without external action, which jumps from a high energy level to a low energy level to produce incoherent light. Laser is a stimulated transition radiation, and the energy of the induced photon should be equal to the energy level difference of the electron transition. The resulting photon and induced photon are coherent light.

[0007] 4) Different principles: Light-emitting diode is a radiation recombination under the action of external voltage, in which electron-hole jumps to quantum well or p-n junction to produce light. Laser needs to meet the lasing conditions, which requires that the carrier in the active region should be inverted, the stimulated radiation light should oscillate back and forth in the resonant cavity, the light should be amplified in the gain medium, the gain should be greater than the loss to meet the threshold condition, and finally the laser is output.

[0008] The nitride semiconductor laser has the following problems: The resistance of the epitaxial and chip materials will generate Joule heat loss and carrier absorption loss under current injection, which causes uneven temperature distribution of the laser, uneven thermal expansion and thermal stress distribution, and problems such as optical catastrophe damage, temperature quenching, and laser fracture. SUMMARY

[0009] To solve one of the above technical problems, the present application provides a semiconductor laser with a waveguide layer for suppressing optical catastrophe.

[0010] The present application provides a semiconductor laser with a waveguide layer for suppressing optical catastrophe, which comprises, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer and an upper cladding layer, wherein the lower waveguide layer comprises, from bottom to top, a first optical catastrophe suppressing lower waveguide layer, a second optical catastrophe suppressing lower waveguide layer and a third optical catastrophe suppressing lower waveguide layer, and the interface between the first optical catastrophe suppressing lower waveguide layer and the lower cladding layer, the interface between the second optical catastrophe suppressing lower waveguide layer and the first optical catastrophe suppressing lower waveguide layer, and the interface between the third optical catastrophe suppressing lower waveguide layer and the second optical catastrophe suppressing lower waveguide layer all have volume elastic modulus distribution characteristics and deformation potential distribution characteristics.

[0011] The rising angle of the valley position of the volume elastic modulus of the first optical catastrophe suppressing lower waveguide layer to the lower cladding layer is α, the falling angle of the peak position of the volume elastic modulus of the second optical catastrophe suppressing lower waveguide layer to the lower cladding layer is β, and the rising angle of the valley position of the volume elastic modulus of the third optical catastrophe suppressing lower waveguide layer to the lower cladding layer is γ, wherein 45°≤γ≤β≤α≤90°.

[0012] The rising angle of the valley position of the deformation potential of the first optical catastrophe suppressing lower waveguide layer to the lower cladding layer is θ, the falling angle of the peak position of the deformation potential of the second optical catastrophe suppressing lower waveguide layer to the lower cladding layer is δ, and the rising angle of the valley position of the deformation potential of the third optical catastrophe suppressing lower waveguide layer to the lower cladding layer is σ, wherein 40°≤σ≤δ≤θ≤90°.

[0013] Preferably, the interface between the first optical catastrophe suppressing lower waveguide layer and the lower cladding layer, the interface between the second optical catastrophe suppressing lower waveguide layer and the first optical catastrophe suppressing lower waveguide layer, and the interface between the third optical catastrophe suppressing lower waveguide layer and the second optical catastrophe suppressing lower waveguide layer all have separation energy distribution characteristics and heavy hole effective mass distribution characteristics.

[0014] The rising angle of the valley position of the separation energy of the first optical catastrophe suppressing lower waveguide layer to the lower cladding layer is The falling angle of the peak position of the separation energy of the second optical catastrophe suppressing lower waveguide layer to the lower cladding layer is ψ, and the rising angle of the valley position of the separation energy of the third optical catastrophe suppressing lower waveguide layer to the lower cladding layer is μ, wherein:

[0015] The first, the angle of rise of the valley position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction is υ, the second, the angle of decline of the peak position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction is ρ, the third, the angle of rise of the valley position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction is ω, wherein: 30°≤ω≤ρ≤υ≤90°.

[0016] Preferably, the relationship between the first, the bulk modulus of the waveguide layer under the inhibition of optical catastrophe, the deformation potential, the separation energy, the angle of rise of the valley position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction, the second, the bulk modulus of the waveguide layer under the inhibition of optical catastrophe, the deformation potential, the separation energy, the angle of decline of the peak position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction, the third, the bulk modulus of the waveguide layer under the inhibition of optical catastrophe, the deformation potential, the separation energy, the angle of rise of the valley position of the heavy hole effective mass of the waveguide layer under the inhibition of optical catastrophe to the lower cladding layer direction is:

[0017] Preferably, the bulk modulus of the interface between the first waveguide layer under the inhibition of optical catastrophe and the lower cladding layer has a function y1=D+lnx1+C*e x1 curve distribution;

[0018] The deformation potential of the interface between the first waveguide layer under the inhibition of optical catastrophe and the lower cladding layer has a function y2=E+F*e x1 lnx1 curve distribution;

[0019] The separation energy of the interface between the first waveguide layer under the inhibition of optical catastrophe and the lower cladding layer has a function y3=G+H*e x1 lnx1 curve distribution;

[0020] The heavy hole effective mass of the interface between the first waveguide layer under the inhibition of optical catastrophe and the lower cladding layer has a function y4=J+K*e x1 +x1 curve distribution;

[0021] Wherein: J≤E≤G≤D, x1 is the depth of the first waveguide layer under the inhibition of optical catastrophe to the second waveguide layer under the inhibition of optical catastrophe.

[0022] Preferably, the bulk modulus of the interface between the second waveguide layer under the inhibition of optical catastrophe and the first waveguide layer under the inhibition of optical catastrophe has a function y5=L+M*e x2 / lnx2 fourth quadrant curve distribution;

[0023] The deformation potential of the interface between the second waveguide layer under the inhibition of optical catastrophe and the first waveguide layer under the inhibition of optical catastrophe has a function y6=N+M*e x2 / lnx2 fourth quadrant curve distribution;

[0024] The separation energy of the interface between the second optical catastrophe-suppressing waveguide layer and the first optical catastrophe-suppressing waveguide layer has a function y7 = P + Q * e x2 lnx2 fourth quadrant curve distribution;

[0025] The heavy hole effective mass of the interface between the second optical catastrophe-suppressing waveguide layer and the first optical catastrophe-suppressing waveguide layer has a function y8 = R + x2 2 -T * e x2 third quadrant curve distribution;

[0026] Wherein: R≤N≤P≤L, x2 is the depth of the second optical catastrophe-suppressing waveguide layer to the third optical catastrophe-suppressing waveguide layer.

[0027] Preferably, the bulk modulus of the interface between the third optical catastrophe-suppressing waveguide layer and the second optical catastrophe-suppressing waveguide layer has a function y9 = U + V * (e x3 -e -x3 ) limit curve distribution;

[0028] The deformation potential of the interface between the third optical catastrophe-suppressing waveguide layer and the second optical catastrophe-suppressing waveguide layer has a function y 10 = W + x3 -A Second quadrant curve distribution, A is an even number and A > 1;

[0029] The separation energy of the interface between the third optical catastrophe-suppressing waveguide layer and the second optical catastrophe-suppressing waveguide layer has a function y 11 = S + x3 -B Second quadrant curve distribution, B is an even number and B > 1;

[0030] The heavy hole effective mass of the interface between the third optical catastrophe-suppressing waveguide layer and the second optical catastrophe-suppressing waveguide layer has a function y2 = Z + x3lnx3 limit curve distribution;

[0031] Wherein: Z≤W≤S≤U, x3 is the depth of the third optical catastrophe-suppressing waveguide layer to the active layer.

[0032] Preferably, the lower waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, and the thickness is 5nm to 1000nm.

[0033] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 angstroms to 150 angstroms, and the barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 angstroms to 200 angstroms.

[0034] Preferably, the upper waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, with a thickness of 5 nm to 1000 nm.

[0035] Preferably, the lower cladding layer, electron blocking layer, upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0036] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of the following: SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0037] The beneficial effects of the present invention are as follows: The semiconductor laser with a lower waveguide layer that suppresses optical catastrophe proposed in this invention improves the uniformity of stress distribution and thermal expansion distribution at the interfaces between the lower waveguide layer and the lower cladding layer, the interface between the lower waveguide layer and the active layer, and the interfaces between the various layers of the lower waveguide layer by designing the change angle of the bulk elastic modulus and deformation potential of the lower waveguide layer, thereby reducing the optical catastrophe of the laser. Attached Figure Description

[0038] The accompanying drawings, which are included to provide a further understanding of this application and form part of this application, illustrate exemplary embodiments and are used to explain this application, but do not constitute an undue limitation of this application. In the drawings:

[0039] Figure 1 This is a schematic diagram of the semiconductor laser with a waveguide layer for suppressing optical catastrophe, as described in an embodiment of the present invention.

[0040] Figure 2 The image shows a SIMS secondary ion mass spectrum of the semiconductor laser with a waveguide layer that suppresses optical catastrophe, as described in an embodiment of the present invention.

[0041] Figure 3 This is a partially enlarged view of the SIMS secondary ion mass spectrum of the semiconductor laser with a waveguide layer for suppressing optical catastrophe, as described in an embodiment of the present invention.

[0042] Figure 4 This is a TEM lens electron microscope image of a semiconductor laser with a waveguide layer for suppressing optical catastrophe, as described in an embodiment of the present invention.

[0043] Figure 5 This is a TEM image of the electron blocking layer of a semiconductor laser with a waveguide layer that suppresses optical catastrophe, as described in an embodiment of the present invention.

[0044] Figure 6 This is a TEM lens electron microscope image of the upper waveguide layer of a semiconductor laser with a lower waveguide layer for suppressing optical catastrophe, as described in an embodiment of the present invention.

[0045] Figure 7 This is a TEM lens electron microscope image of the active layer of the semiconductor laser with a waveguide layer that suppresses optical catastrophe, as described in an embodiment of the present invention.

[0046] Figure 8 This is a TEM image of the lower waveguide layer of a semiconductor laser with an optical catastrophe suppression lower waveguide layer as described in an embodiment of the present invention.

[0047] Figure label:

[0048] 100. Substrate; 101. Lower cladding layer; 102. Lower waveguide layer; 103. Active layer; 104. Upper waveguide layer; 105. Electron blocking layer; 106. Upper cladding layer.

[0049] 102a, First waveguide layer for suppressing optical catastrophe; 102b, Second waveguide layer for suppressing optical catastrophe; 102c, Third waveguide layer for suppressing optical catastrophe. Detailed Implementation

[0050] To make the technical solutions and advantages of the embodiments of this application clearer, the exemplary embodiments of this application will be described in further detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not an exhaustive list of all embodiments. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this application can be combined with each other.

[0051] like Figures 1 to 8 As shown, this embodiment proposes a semiconductor laser with a lower waveguide layer for suppressing optical catastrophes, comprising a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper cladding layer 106 arranged sequentially from bottom to top.

[0052] Specifically, in this embodiment, the semiconductor laser with a lower waveguide layer for suppressing optical catastrophes is provided from bottom to top as follows: substrate 100, lower cladding layer 101, lower waveguide layer 102, active layer 103, upper waveguide layer 104, electron blocking layer 105, and upper cladding layer 106. The lower waveguide layer 102 has bulk modulus distribution characteristics and deformation potential distribution characteristics, making it a lower waveguide layer for suppressing optical catastrophes.

[0053] More specifically, in this embodiment, the lower waveguide layer 102 includes a first optical catastrophic suppression lower waveguide layer 102a, a second optical catastrophic suppression lower waveguide layer 102b, and a third optical catastrophic suppression lower waveguide layer 102c, arranged sequentially from bottom to top. The interfaces between the first optical catastrophic suppression lower waveguide layer 102a and the lower cladding layer 101, the second optical catastrophic suppression lower waveguide layer 102b and the first optical catastrophic suppression lower waveguide layer 102a, and the third optical catastrophic suppression lower waveguide layer 102c and the second optical catastrophic suppression lower waveguide layer 102b all exhibit volumetric elastic modulus distribution characteristics and deformation potential distribution characteristics. Furthermore, the volumetric elastic modulus and deformation potential of the first optical catastrophic suppression lower waveguide layer 102a, the second optical catastrophic suppression lower waveguide layer 102b, and the third optical catastrophic suppression lower waveguide layer 102c also exhibit a certain trend of change towards the lower cladding layer 101, specifically manifested as follows:

[0054] The variation trend of the bulk elastic modulus in the first optical catastrophe suppression lower waveguide layer 102a, the second optical catastrophe suppression lower waveguide layer 102b, and the third optical catastrophe suppression lower waveguide layer 102c towards the lower cladding layer 101 is as follows:

[0055] The valley position of the bulk elastic modulus of the first suppressed optical catastrophe waveguide layer 102a shows an upward trend towards the lower cladding layer 101.

[0056] The peak position of the bulk elastic modulus of the waveguide layer 102b under the second suppression of optical catastrophe shows a decreasing trend towards the lower cladding layer 101.

[0057] The valley position of the bulk elastic modulus of the third waveguide layer 102c under the suppression of optical catastrophe shows an upward trend towards the lower cladding layer 101.

[0058] Furthermore, the upward angle of the valley position of the bulk elastic modulus of the first waveguide layer 102a under the suppression of optical catastrophic events towards the lower cladding layer 101 is α; the downward angle of the peak position of the bulk elastic modulus of the second waveguide layer 102b under the suppression of optical catastrophic events towards the lower cladding layer 101 is β; and the upward angle of the valley position of the bulk elastic modulus of the third waveguide layer 102c under the suppression of optical catastrophic events towards the lower cladding layer 101 is γ, where: 45°≤γ≤β≤α≤90°.

[0059] The deformation potential in the first optical catastrophe suppression lower waveguide layer 102a, the second optical catastrophe suppression lower waveguide layer 102b, and the third optical catastrophe suppression lower waveguide layer 102c varies towards the lower cladding layer 101 as follows:

[0060] The valley position of the deformation potential of the waveguide layer 102a under the first suppression of optical catastrophe shows an upward trend towards the lower cladding layer 101.

[0061] The peak position of the deformation potential of the waveguide layer 102b under the second suppression of optical catastrophe shows a decreasing trend towards the lower cladding layer 101.

[0062] The valley position of the deformation potential of the waveguide layer 102c under the third suppression of optical catastrophe shows an upward trend towards the lower cladding layer 101.

[0063] Furthermore, the upward angle of the valley position of the deformation potential of the first waveguide layer 102a under the suppression of optical catastrophic events towards the lower cladding layer 101 is θ; the downward angle of the peak position of the deformation potential of the second waveguide layer 102b under the suppression of optical catastrophic events towards the lower cladding layer 101 is δ; and the upward angle of the valley position of the deformation potential of the third waveguide layer 102c under the suppression of optical catastrophic events towards the lower cladding layer 101 is σ, where: 40°≤σ≤δ≤θ≤90°.

[0064] This embodiment improves the uniformity of stress distribution and thermal expansion distribution at the interfaces between the lower waveguide layer 102 and the lower cladding layer 101, the lower waveguide layer 102 and the active layer 103, and the interfaces between the layers of the lower waveguide layer 102 by designing the change angle of the bulk elastic modulus and deformation potential of the lower waveguide layer 102, thereby reducing optical catastrophes in the laser.

[0065] In some optional embodiments, the interfaces of the first optical catastrophe suppression lower waveguide layer 102a and the lower cladding layer 101, the second optical catastrophe suppression lower waveguide layer 102b and the first optical catastrophe suppression lower waveguide layer 102a, and the third optical catastrophe suppression lower waveguide layer 102c and the second optical catastrophe suppression lower waveguide layer 102b all possess separation energy distribution characteristics and heavy hole effective mass distribution characteristics. Simultaneously, the separation energy and heavy hole effective mass in the first optical catastrophe suppression lower waveguide layer 102a, the second optical catastrophe suppression lower waveguide layer 102b, and the third optical catastrophe suppression lower waveguide layer 102c exhibit a certain trend of change towards the lower cladding layer 101, specifically manifested as follows:

[0066] The trend of the separation energy in the first optical catastrophe suppression lower waveguide layer 102a, the second optical catastrophe suppression lower waveguide layer 102b, and the third optical catastrophe suppression lower waveguide layer 102c in the direction of the lower cladding layer 101 is as follows:

[0067] The valley position of the separation energy of the first suppressed optical catastrophe waveguide layer 102a shows an upward trend towards the lower cladding layer 101.

[0068] The peak position of the separation energy of the waveguide layer 102b under the second suppression of optical catastrophe shows a decreasing trend towards the lower cladding layer 101.

[0069] The valley position of the separation energy of the third suppression optical catastrophe waveguide layer 102c shows an upward trend towards the lower cladding layer 101.

[0070] Furthermore, the upward angle of the valley position of the separation energy of the first waveguide layer 102a under the suppression of optical catastrophe is towards the lower cladding layer 101. The peak position of the separation energy of waveguide layer 102b under the second suppression of optical catastrophe decreases at an angle ψ towards the lower cladding layer 101, and the valley position of the separation energy of waveguide layer 102c under the third suppression of optical catastrophe increases at an angle μ towards the lower cladding layer 101, where:

[0071] The variation trend of the effective mass of heavy holes in the first optical catastrophe suppression lower waveguide layer 102a, the second optical catastrophe suppression lower waveguide layer 102b, and the third optical catastrophe suppression lower waveguide layer 102c towards the lower cladding layer 101 is as follows:

[0072] The valley position of the effective mass of heavy holes in the first suppressed optical catastrophe waveguide layer 102a shows an upward trend towards the lower cladding layer 101.

[0073] The peak position of the effective mass of heavy holes in the waveguide layer 102b under the second suppression of optical catastrophe shows a decreasing trend towards the lower cladding layer 101.

[0074] The valley position of the effective mass of heavy holes in the waveguide layer 102c under the third suppression of optical catastrophe shows an upward trend towards the lower cladding layer 101.

[0075] Furthermore, the upward angle of the valley position of the effective mass of heavy holes in the first waveguide layer 102a under the suppression of optical catastrophe in the direction of the lower cladding layer 101 is υ; the downward angle of the peak position of the effective mass of heavy holes in the second waveguide layer 102b under the suppression of optical catastrophe in the direction of the lower cladding layer 101 is ρ; and the upward angle of the valley position of the effective mass of heavy holes in the third waveguide layer 102c under the suppression of optical catastrophe in the direction of the lower cladding layer 101 is ω, where: 30°≤ω≤ρ≤υ≤90°.

[0076] Furthermore, the relationship between the rising angle of the valley position of the first waveguide layer 102a under optical catastrophe suppression, including its bulk elastic modulus, deformation potential, separation energy, and effective mass of heavy holes, towards the lower cladding layer 101; the falling angle of the peak position of the second waveguide layer 102b under optical catastrophe suppression, including its bulk elastic modulus, deformation potential, separation energy, and effective mass of heavy holes, towards the lower cladding layer 101; and the rising angle of the third waveguide layer 102c under optical catastrophe suppression, including its bulk elastic modulus, deformation potential, separation energy, and effective mass of heavy holes, towards the lower cladding layer 101, is as follows:

[0077] This embodiment reduces the two-dimensional or three-dimensional island structure caused by InN segregation in the lower waveguide layer 102 by designing the separation energy and the change angle of the effective mass of heavy holes, thereby improving the crystal quality of the lower waveguide layer 102, suppressing the thermal degradation and compositional fluctuations of the lower waveguide layer 102, and further suppressing the optical catastrophe of the laser. The optical catastrophe ratio of the laser is reduced from 35 PPM to 6 PPM.

[0078] In some optional embodiments, the bulk modulus distribution characteristics, deformation potential distribution characteristics, separation energy distribution characteristics, and heavy hole effective mass distribution characteristics of the interface between the first optical catastrophe-suppressing waveguide layer 102a and the lower cladding layer 101 are specifically manifested as follows:

[0079] The bulk modulus of the interface between the first waveguide layer 102a and the lower cladding layer 101, which suppresses optical catastrophe, has the function y1=D+lnx1+C*e x1 Curve distribution;

[0080] The deformation potential at the interface between the first suppressed optical catastrophe waveguide layer 102a and the lower cladding layer 101 has the function y2=E+F*e x1 lnx1 curve distribution;

[0081] The separation energy at the interface between the first suppressed optical catastrophe waveguide layer 102a and the lower cladding layer 101 has the function y3=G+H*e x1 lnx1 curve distribution;

[0082] The effective mass of heavy holes at the interface between the first suppressed optical catastrophe waveguide layer 102a and the lower cladding layer 101 has the function y4=J+K*e x1 +x1 curve distribution;

[0083] Where: J≤E≤G≤D, x1 is the depth of the first waveguide layer 102a to the second waveguide layer 102b that suppresses optical catastrophic events.

[0084] In some optional embodiments, the bulk modulus distribution characteristics, deformation potential distribution characteristics, separation energy distribution characteristics, and heavy hole effective mass distribution characteristics of the interface between the second optical catastrophe suppression lower waveguide layer 102b and the first optical catastrophe suppression lower waveguide layer 102a are specifically manifested as follows:

[0085] The bulk modulus of the interface between the second waveguide layer 102b and the first waveguide layer 102a that suppresses optical catastrophe has the function y5 = L + M*e. x2 / lnx2 distribution of the fourth quadrant curve;

[0086] The deformation potential at the interface between the second suppressed optical catastrophe waveguide layer 102b and the first suppressed optical catastrophe waveguide layer 102a has the function y6=N+M*ex2 / lnx2 distribution of the fourth quadrant curve;

[0087] The separation energy at the interface between the second suppressed optical catastrophe waveguide layer 102b and the first suppressed optical catastrophe waveguide layer 102a has the function y7=P+Q*e x2 / lnx2 distribution of the fourth quadrant curve;

[0088] The effective mass of heavy holes at the interface between the second suppressed optical catastrophe lower waveguide layer 102b and the first suppressed optical catastrophe lower waveguide layer 102a has a function y8 = R + x2. 2 -T*e x2 Third quadrant curve distribution;

[0089] Where: R≤N≤P≤L, x2 is the depth of the second waveguide layer 102b in the direction of the third waveguide layer 102c in the direction of the second waveguide layer 102b in the direction of the optical catastrophe suppression.

[0090] In some optional embodiments, the bulk modulus distribution characteristics, deformation potential distribution characteristics, separation energy distribution characteristics, and heavy hole effective mass distribution characteristics of the interface between the third optical catastrophe suppression lower waveguide layer 102c and the second optical catastrophe suppression lower waveguide layer 102b are specifically manifested as follows:

[0091] The bulk modulus of the interface between the third waveguide layer 102c and the second waveguide layer 102b, which suppresses optical catastrophe, has the function y9=U+V*(e x3 -e -x3 )Limited curve distribution;

[0092] The deformation potential at the interface between the third suppressed optical catastrophe waveguide layer 102c and the second suppressed optical catastrophe waveguide layer 102b has a function y 10 =W+x3 -A The second quadrant curve distribution, where A is even and A > 1;

[0093] The separation energy at the interface between the third suppressed optical catastrophe waveguide layer 102c and the second suppressed optical catastrophe waveguide layer 102b has a function y 11 =S+x3 -B The second quadrant curve distribution has B as an even number and B > 1;

[0094] The effective mass of heavy holes at the interface between the third suppressed optical catastrophe lower waveguide layer 102c and the second suppressed optical catastrophe lower waveguide layer 102b has a function y2=Z+x3lnx3 limit curve distribution;

[0095] Where: Z≤W≤S≤U, x3 is the depth of waveguide layer 102c towards active layer 103 under the third suppression of optical catastrophe.

[0096] This embodiment, by designing the interface variation curves of the bulk modulus, deformation potential, separation energy, and effective mass of heavy holes of the lower waveguide layer 102, can further improve the stress distribution uniformity and thermal expansion distribution uniformity at the interfaces between the lower waveguide layer 102 and the lower cladding layer 101, the interface between the lower waveguide layer 102 and the active layer 103, and the interfaces between the layers of the lower waveguide layer 102. This reduces optical catastrophe in the laser, reduces the two-dimensional or three-dimensional island structure caused by InN segregation in the lower waveguide layer 102, improves the crystal quality of the lower waveguide layer 102, suppresses the thermal degradation and compositional fluctuations of the lower waveguide layer 102, and further suppresses optical catastrophe in the laser.

[0097] In some alternative embodiments, the lower waveguide layer 102 is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice, with a thickness of 5 nm to 1000 nm.

[0098] In some alternative embodiments, the active layer 103 is a periodic structure consisting of a well layer and a barrier layer.

[0099] Specifically, the well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 150 angstroms.

[0100] The barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0101] In some alternative embodiments, the upper waveguide layer 104 is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInGaN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice, with a thickness of 5 nm to 1000 nm.

[0102] In some optional embodiments, the lower cladding layer 101, the electron blocking layer 105, and the upper cladding layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0103] In some alternative embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, and sapphire / SiN. x Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of the following: SiO2 composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0104] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Therefore, if such modifications and variations fall within the scope of the claims of this application and their equivalents, this application also intends to include such modifications and variations.

Claims

1. A semiconductor laser having a lower waveguide layer that suppresses optical catastrophe, comprising, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper cladding layer, characterized in that, The lower waveguide layer comprises, from bottom to top, a first optical catastrophe suppression lower waveguide layer, a second optical catastrophe suppression lower waveguide layer, and a third optical catastrophe suppression lower waveguide layer, and the first optical catastrophe suppression lower waveguide layer and the lower cladding layer interface, the second optical catastrophe suppression lower waveguide layer and the first optical catastrophe suppression lower waveguide layer interface, and the third optical catastrophe suppression lower waveguide layer and the second optical catastrophe suppression lower waveguide layer interface all have volume elastic modulus distribution characteristics and deformation potential distribution characteristics; The angle of the valley position of the volume elastic modulus of the first optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is α, the angle of the peak position of the volume elastic modulus of the second optical catastrophe suppression lower waveguide layer falling to the lower cladding layer direction is β, and the angle of the valley position of the volume elastic modulus of the third optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is γ, wherein: 45°≤γ≤β≤α≤90°. The angle of the valley position of the deformation potential of the first optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is θ, the angle of the peak position of the deformation potential of the second optical catastrophe suppression lower waveguide layer falling to the lower cladding layer direction is δ, and the angle of the valley position of the deformation potential of the third optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is σ, wherein: 40°≤σ≤δ≤θ≤90°.

2. The semiconductor laser having a waveguide layer that suppresses optical catastrophe according to claim 1, wherein The first optical catastrophe suppression lower waveguide layer and the lower cladding layer interface, the second optical catastrophe suppression lower waveguide layer and the first optical catastrophe suppression lower waveguide layer interface, and the third optical catastrophe suppression lower waveguide layer and the second optical catastrophe suppression lower waveguide layer interface all have separation energy distribution characteristics and heavy hole effective mass distribution characteristics; The ascending angle of the valley position of the separation energy of the waveguide layer under the optical catastrophe to the down cladding layer direction is The descending angle of the peak position of the separation energy of the waveguide layer under the optical catastrophe to the down cladding layer direction is ψ, and the ascending angle of the valley position of the separation energy of the waveguide layer under the optical catastrophe to the down cladding layer direction is μ, wherein: The angle of the valley position of the heavy hole effective mass of the first optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is υ, the angle of the peak position of the heavy hole effective mass of the second optical catastrophe suppression lower waveguide layer falling to the lower cladding layer direction is ρ, and the angle of the valley position of the heavy hole effective mass of the third optical catastrophe suppression lower waveguide layer rising to the lower cladding layer direction is ω, wherein: 30°≤ω≤ρ≤υ≤90°.

3. The semiconductor laser having a waveguide layer for suppressing optical catastrophe according to claim 2, wherein The relationship between the ascending angle of the valley position of the bulk modulus of elasticity, the deformation potential, the separation energy, the effective mass of the heavy hole of the waveguide layer under the inhibition of the optical catastrophe to the down cladding layer direction, the descending angle of the peak position of the bulk modulus of elasticity, the deformation potential, the separation energy, the effective mass of the heavy hole of the waveguide layer under the inhibition of the optical catastrophe to the down cladding layer direction, the ascending angle of the valley position of the bulk modulus of elasticity, the deformation potential, the separation energy, the effective mass of the heavy hole of the waveguide layer under the inhibition of the optical catastrophe to the down cladding layer direction of the third is:

4. The semiconductor laser having a waveguide layer for suppressing optical catastrophe according to claim 2, wherein The first volume modulus of elasticity of the interface between the lower waveguide layer and the lower cladding layer under optical catastrophe has a function y1=D+lnx1+C*e x1 Curvilinear distribution; The first inhibiting optical catastrophe interface between the waveguide layer and the lower cladding layer has a deformation potential function y2=E+F*e x1 lnx1 curve distribution; The first inhibiting separation of the waveguide layer from the interface of the lower cladding layer under optical catastrophe can have the function y3=G+H*e x1 Inx1 curve distribution; The first inhibition of the heavy hole effective mass of the interface between the waveguide layer and the lower cladding layer under optical catastrophe has a function y4=J+K*e x1 +x1 curve distribution; Wherein: J≤E≤G≤D, x1 is the depth of the first optical catastrophe suppression lower waveguide layer to the second optical catastrophe suppression lower waveguide layer direction.

5. The semiconductor laser having a waveguide layer to suppress optical catastrophe according to claim 2, wherein The second optical catastrophe-inhibiting waveguide layer has a volume elastic modulus at the interface with the first optical catastrophe-inhibiting waveguide layer that is a function of y5 = L + M * e x2 / lnx2 fourth quadrant curve distribution; The second optical catastrophe-inhibiting waveguide layer has a deformation potential at the interface with the first optical catastrophe-inhibiting waveguide layer that has the function y6 = N + M * e x2 / lnx2 fourth quadrant curve distribution; The second separation of the waveguide layer under the optical catastrophe from the interface of the first waveguide layer under the optical catastrophe can have a function y7 = P + Q * e x2 / lnx2 fourth quadrant curve distribution; The second heavy-hole effective mass at the interface of the waveguide layer under the second optical catastrophe suppression and the first waveguide layer under the first optical catastrophe suppression has a function y8=R+x2 2 -T*e x2 Third quadrant curve distribution; Wherein: R≤N≤P≤L, x2 is the depth of the second optical catastrophe suppression lower waveguide layer to the third optical catastrophe suppression lower waveguide layer direction.

6. The semiconductor laser having a waveguide layer to suppress optical catastrophe according to claim 2, wherein The third optical catastrophe-inhibiting waveguide layer has a volume elastic modulus at the interface with the second optical catastrophe-inhibiting waveguide layer that has a function y9 = U + V * (e x3 - e -x3 ) limit curve distribution; The third inhibiting optical catastrophe waveguide layer and the second inhibiting optical catastrophe waveguide layer interface deformation potential has a function y 10 = W + x3 -A Second quadrant curve distribution, A is even and A > 1; The third separation of the interface between the waveguide layer under the optical catastrophe inhibition and the second waveguide layer under the optical catastrophe inhibition can have a function y 11 = S + x3 -B Second quadrant curve distribution, B is even and B > 1; The heavy hole effective mass of the third optical catastrophe suppression lower waveguide layer and the second optical catastrophe suppression lower waveguide layer interface has a function y2=Z+x3lnx3 limit curve distribution; Wherein: Z≤W≤S≤U, x3 is the depth of the third optical catastrophe suppression lower waveguide layer to the active layer direction.

7. The semiconductor laser having a waveguide layer to suppress optical catastrophe according to claim 1, wherein The lower waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, and the thickness is 5nm to 1000nm.

8. The semiconductor laser having a waveguide layer to suppress optical catastrophe according to claim 1, wherein, The active layer is a periodic structure composed of well layers and barrier layers, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 150 angstrom meters, the barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, and the thickness is 10 angstrom meters to 200 angstrom meters.

9. The semiconductor laser having a waveguide layer to suppress optical catastrophe according to claim 1, wherein, The upper waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, and the thickness is 5nm to 1000nm. The lower cladding layer, the electron blocking layer, and the upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

10. The semiconductor laser having a waveguide layer that suppresses optical catastrophe according to claim 1, wherein, The substrate comprises any one of sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AIN composite substrate, diamond, graphene, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

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