Light-emitting element and display device

Abstract

The invention relates to a light-emitting element and a display device. A light-emitting element according to an embodiment of the present disclosure includes at least: a dome-shaped portion; a first electrode layer formed at least partially along a shape of a top surface of the dome-shaped portion; an organic layer formed on the first electrode layer at least partially along a shape of a top surface of the first electrode layer; a second electrode layer formed on the organic layer along a shape of a top surface of the organic layer; and a planarization layer formed on the second electrode layer, in which light from the organic layer is emitted to the outside through the second electrode layer and the planarization layer.

Description

[0001] This application is a divisional application with application date of January 30, 2019, application number 201980009906.0, and invention name “Light-emitting element and display device”, and all its contents are incorporated herein by reference.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of Japanese Priority Patent Application JP 2018-014492 filed on January 31, 2018, the entire contents of which are hereby incorporated by reference. Technical Field

[0004] The present disclosure relates to a light emitting element and a display device including a plurality of light emitting elements. Background Art

[0005] In recent years, a display device (organic EL display) using an electroluminescent (EL) element as a light-emitting element has been developed. In this display device, for example, an organic layer including at least a light-emitting layer and a second electrode (upper electrode) is formed on a first electrode (lower electrode) formed on each pixel. In addition, each of a red light-emitting element having a combination of an organic layer configured to emit white light and a red color filter, a green light-emitting element having a combination of an organic layer configured to emit white light and a green color filter, and a blue light-emitting element having a combination of an organic layer configured to emit white light and a blue color filter is configured to emit white light, for example, is set as a sub-pixel, and these sub-pixels form a single pixel. The light from the light-emitting layer is emitted to the outside via the second electrode (upper electrode). Then, in order to improve the front light extraction efficiency, an on-chip microlens is set above the second electrode.

[0006] Meanwhile, as the miniaturization of light-emitting elements progresses, positional adjustment between the organic layer and the on-chip microlens becomes difficult. For example, means for solving this problem are disclosed in JP 2003-133057A or JP 2015-118761A.

[0007] The light-emitting device disclosed in JP 2003-133057A includes: a light-emitting layer configured to emit light by electroluminescence; a pair of electrodes configured to apply an electric field to the light-emitting layer; and a substrate having a recessed portion at a surface. The light-emitting layer is disposed in the recessed portion of the substrate. In addition, in a fifth embodiment, the light-emitting layer is formed to function as an optical lens.

[0008] In addition, the organic EL display device disclosed in JP 2015-118761A includes a substrate, a TFT, an anode having a reflective layer and a transparent electrode layer and electrically connected to the TFT, and a lens element provided between the reflective layer and the transparent electrode layer. An organic light-emitting layer is formed on the transparent electrode layer, and a cathode is formed on the organic light-emitting layer.

[0009] Citation List

[0010] Patent Literature

[0011] Patent Document 1: JP 2003-133057A

[0012] Patent Document 2: JP 2015-118761A Summary of the invention

[0013] Technical issues

[0014] However, as in the light-emitting device disclosed in JP 2003-133057A, it is necessary to form a light-emitting layer having a variable layer thickness in order to obtain a light-emitting layer used as an optical lens. However, it is extremely difficult to form such a light-emitting layer. In addition, as in the organic EL display device disclosed in JP 2015-118761A, in the case of a structure having a lens element disposed between a reflective layer and a transparent electrode layer, steps such as forming a lens element and forming a transparent electrode layer are added, and it is difficult to form an organic light-emitting layer on a raised transparent electrode layer.

[0015] For these reasons, it is desirable to provide a light-emitting element including an organic layer and a display device including a plurality of light-emitting elements, wherein the organic layer has a light-emitting layer and has a constant thickness and is configured so that front light extraction efficiency can be improved without significantly increasing the number of manufacturing steps.

[0016] Solution to the problem

[0017] According to an embodiment of the present disclosure, a light emitting element is provided, comprising at least:

[0018] a concave or dome-shaped portion;

[0019] a first electrode layer formed at least partially along the shape of a top surface of the recessed portion or the dome-shaped portion;

[0020] an organic layer formed on the first electrode layer at least partially along a shape of a top surface of the first electrode layer;

[0021] a second electrode layer formed on the organic layer along a shape of a top surface of the organic layer; and

[0022] a planarization layer formed on the second electrode layer,

[0023] Here, light from the organic layer is emitted to the outside via the second electrode layer and the planarization layer.

[0024] According to an embodiment of the present disclosure, there is provided a display device, including:

[0025] a first substrate and a second substrate; and

[0026] The plurality of light emitting elements disclosed herein are located between a first substrate and a second substrate and are arranged in a two-dimensional manner.

[0027] Advantageous Effects of the Invention

[0028] In the light-emitting elements of the embodiments of the present disclosure and the light-emitting elements included in the display devices of the embodiments of the present disclosure (hereinafter, these light-emitting elements are sometimes collectively referred to as "light-emitting elements, etc." of the embodiments of the present disclosure), a recessed portion or a dome-shaped portion is provided. Therefore, a portion of the light emitted from the organic layer is reflected on the first electrode layer, and then, it is emitted from the light-emitting element through the organic layer, the second electrode layer and the planarization layer. Therefore, the front light extraction efficiency can be improved. In addition, the manufacturing steps are not significantly increased. In addition, the first electrode layer, the organic layer and the second electrode layer are formed substantially along the shape of the top surface of the recessed portion, and the thickness of the organic layer is a constant thickness. Therefore, as described below, a resonator structure can be easily formed. In addition, the thickness of the first electrode layer is constant, and therefore, the phenomenon of coloration and brightness change of the first electrode layer depending on the angle at which the display device is viewed due to the thickness change of the first electrode layer can be reduced. Note that the advantageous effects described in this specification are merely examples, and the present disclosure is not limited to these examples. In addition, additional advantageous effects can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic partial end view of a portion of a light emitting element of a first embodiment;

[0030] Figure 2 yes Figure 1 An illustration of light trajectories in a schematic partial end view of a portion of a light emitting element of the first embodiment shown, except for some hatching;

[0031] Figure 3 is a schematic partial cross-sectional view of a display device according to the first embodiment;

[0032] Figure 4 is a schematic partial end view of a modification of the light emitting element of the first embodiment;

[0033] Figure 5 is a schematic partial end view of another variation of the light emitting element of the first embodiment;

[0034] Figure 6 is a schematic partial end view of a light emitting element of a second embodiment;

[0035] Figure 7 is a schematic partial end view of a light emitting element in a display device of a third embodiment;

[0036] Figure 8 In the display device of the third embodiment, the Figure 7 A schematic partial end view of a light emitting element in the position of;

[0037] Fig. 9 In the display device of the third embodiment, the Figure 7 and Figure 8 A schematic partial end view of a light emitting element in the position of;

[0038] Fig.10 is a schematic partial end view of a variation of the light emitting element in the display device of the third embodiment;

[0039] Fig.11 In the display device of the third embodiment, the Fig.10 Schematic partial end view of a variation of the position of the light emitting element;

[0040] Fig.12 In the display device of the third embodiment, the Fig.10 and Fig.11 Schematic partial end view of a variation of the position of the light emitting element;

[0041] Fig.13 is a schematic partial end view of a modification of the light emitting element of the first embodiment;

[0042] Fig.14A , Fig. 14B , Fig. 14C and Fig.14D is a schematic diagram of the arrangement of light-emitting elements in the display device of the first embodiment;

[0043] Fig.15A , Fig. 15B , Fig. 15C and Fig.15D is a schematic diagram showing the arrangement relationship between the second electrode and the color filter layer in the display device of the first embodiment;

[0044] Fig.16A , Fig. 16B and Fig. 16C It is used to describe manufacturing Figure 1 A schematic partial end view of a base and the like of the light emitting element method of the first embodiment shown;

[0045] Fig.17A and Fig. 17B Is used from Fig. 16C Continue to describe manufacturing Figure 1 A schematic partial end view of a base and the like of the light emitting element method of the first embodiment shown;

[0046] Fig.18A and Fig.18B It is used to describe manufacturing Figure 1 A schematic partial end view of a base and the like of another method of the light emitting element of the first embodiment shown;

[0047] Fig.19A and Fig.19B An example of applying the display device of the embodiment of the present disclosure to a single-lens reflex digital camera with interchangeable lenses is shown. Fig.19A A front view of a digital camera is shown in FIG. Fig.19B A rear view is shown in FIG.

[0048] Fig. 20 is an external view of a head-mounted display, showing an example in which the display device according to an embodiment of the present disclosure is applied to the head-mounted display;

[0049] Fig.21 is a schematic partial end view of a portion of a light emitting element of a bottom emitting embodiment;

[0050] Fig. 22 yes Fig.21 Illustration of light trajectories in a schematic partial end view of a portion of a light emitting element of the illustrated bottom emitting embodiment. DETAILED DESCRIPTION

[0051] Hereinafter, the present disclosure will be described based on the embodiments with reference to the accompanying drawings. However, the present disclosure is not limited to the embodiments, and various numerical values ​​and materials in the embodiments are described by way of example. Note that the description will be made in the following order:

[0052] 1. General description of a light emitting element according to an embodiment of the present disclosure and a display device according to an embodiment of the present disclosure;

[0053] 2. First embodiment (light emitting element according to an embodiment of the present disclosure and display device according to an embodiment of the present disclosure);

[0054] 3. Second embodiment (variation of the first embodiment);

[0055] 4. A third embodiment (another variation of the first embodiment); and

[0056] 5. Others

[0057] <General Description of Light Emitting Element of Embodiment of the Present Disclosure and Display Device of Embodiment of the Present Disclosure>

[0058] For example, the light-emitting element of the embodiment of the present disclosure may be in the form of a protective film formed between the second electrode layer and the planarization layer. The protective film is preferably formed along the shape of the top surface of the second electrode layer. The protective film has the function of adjusting and controlling the refraction angle of light passing through the protective film. In addition, in this case, when the refractive index of the material forming the planarization layer is n1 and the refractive index of the material forming the protective film is n2, preferably, n1>n2 is satisfied. For example, the value of (n1-n2) may be, but is not limited to, 0.1 to 0.6. With such a protective film, part of the light emitted from the organic layer passes through the second electrode layer and the protective film, enters the planarization layer, and part of the light emitted from the organic layer is reflected on the first electrode layer, thereby entering the planarization layer through the organic layer, the second electrode layer and the protective film. As described above, the protective film and the planarization layer may form an internal lens, and the light emitted from the organic layer may be gathered in a direction toward the center side of the light-emitting element. Therefore, the efficiency of extracting the front light from the light emitted to the outside from the light-emitting element may be improved without providing an on-chip microlens above the second electrode layer.

[0059] Alternatively, the light emitting element of the embodiment of the present disclosure may have a form such that when the incident angle of light emitted from the organic layer and entering the planarization layer through the second electrode layer is θ i And the refraction angle of the light that has entered the planarization layer is θ r When |θ r When |≠0, it satisfies

[0060] |θ i |>|θ r |.

[0061] When these conditions are met, a portion of the light emitted from the organic layer passes through the second electrode layer to enter the planarization layer, and a portion of the light emitted from the organic layer is reflected on the first electrode layer to enter the planarization layer through the organic layer and the second electrode layer. As described above, an internal lens can be formed, and the light emitted from the organic layer can be concentrated in a direction toward the center side of the light-emitting element. Therefore, the efficiency of extracting front light from the light emitted to the outside from the light-emitting element can be improved without providing an on-chip microlens above the second electrode layer.

[0062] For example, the light-emitting element of the embodiment of the present disclosure including the above-mentioned various preferred forms, etc. can have such a form that the planarization layer has the function of a color filter. Generally, the color filter layer includes a resin, to which a colorant including a desired pigment or dye is added. By selecting a pigment or dye, it is adjusted so that the light transmittance of colors such as red, green, and blue in the expected wavelength range is high, and the light transmittance in other wavelength ranges is low. The planarization layer with a color filter function can include a well-known color resist material. In the light-emitting element configured to emit white light described later, a transparent filter can be provided. Since the planarization layer is also used as a color filter as described above, the organic layer and the planarization layer are close to each other. Therefore, even when the angle of light emitted from the light-emitting element is widened, color mixing can be effectively prevented, and the viewing angle characteristics can be improved. The color filter layer can be formed separately on the planarization layer independently of the planarization layer.

[0063] In addition, the light-emitting element of the present disclosure embodiment including the above-mentioned various preferred forms, etc. can be configured so that an on-chip microlens is set on or above the top surface of the planarization layer. With the on-chip microlens, light from the organic layer can be released in a desired state, and therefore, the viewing angle characteristics can be controlled. For example, the on-chip microlens includes a well-known acrylic-based resin. The on-chip microlens can be obtained by melt flow or etching back of the acrylic-based resin. The above-mentioned internal lens specifically plays a role in improving the efficiency of extracting front light from the light emitted from the light-emitting element to the outside, and therefore, the on-chip microlens position adjustment accuracy does not need to be very high. The same applies to the following description.

[0064] In addition, the light-emitting element of the embodiment of the present disclosure including the above-mentioned various preferred forms / configurations can be configured so that the first electrode layer contacts a part of the organic layer, or the organic layer contacts a part of the first electrode layer. Specifically, in this case, it can be configured so that the size of the first electrode layer is smaller than the size of the organic layer, or the size of the first electrode layer is the same as the size of the organic layer, but the insulating material film is formed at the part of the portion between the first electrode layer and the organic layer. Optionally, it can be configured so that the size of the first electrode layer is larger than the size of the organic layer. In addition, in this case, it can be configured so that the color filter layer is formed on the planarization layer, and the direction from the axis of the recessed portion toward the center point of the first electrode layer contacting the organic layer and the direction from the axis of the recessed portion toward the center point of the color filter layer have a relationship of opposite directions. The above-mentioned "center point" is the center point of the orthogonal projection on the virtual plane (hereinafter referred to as the "base virtual plane") including the surface of the base, and for convenience, it is sometimes referred to as the "orthogonal projection center point" hereinafter. In addition, the above-mentioned "direction" is the direction of the orthogonal projection on the base virtual plane, and for convenience, it is sometimes referred to as the "orthogonal projection direction" hereinafter. As the position of the light-emitting element is closer to the periphery of the display device, the distance PL1 from the axis of the recessed portion toward the center point of the first electrode layer contacting the organic layer (the center point of the orthogonal projection) and the distance PL2 from the axis of the recessed portion toward the center point of the color filter layer (the center point of the orthogonal projection) are preferably larger. The above-mentioned "distance" is the distance of the orthogonal projection on the virtual plane of the base, and for convenience, it is sometimes referred to as the "orthogonal projection distance" hereinafter. The center point of the first electrode layer (the center point of the orthogonal projection), the center point of the organic layer (the center point of the orthogonal projection), and the intersection between the axis of the recessed portion and the virtual plane of the base are preferably located on a substantially straight line.

[0065] Optionally, the light emitting element and the like of the embodiments of the present disclosure including the above-mentioned various preferred forms may be configured such that

[0066] The on-chip microlenses are disposed on or above the top surface of the planarization layer.

[0067] The first electrode layer contacts a portion of the organic layer, and

[0068] The direction (orthogonal projection direction) from the axis of the recessed portion toward the center point (orthogonal projection center point) of the first electrode layer contacting the organic layer and the direction (orthogonal projection direction) from the axis of the recessed portion toward the center point (orthogonal projection center point) of the on-chip microlens have an opposite direction relationship. In addition, in this case, it can be configured so that the on-chip microlens is larger than the recessed portion. As the position of the light-emitting element is closer to the peripheral portion of the display device, the distance (orthogonal projection distance) PL1' from the axis of the recessed portion toward the center point (orthogonal projection center point) of the first electrode layer and the distance (orthogonal projection distance) PL2' from the axis of the recessed portion toward the center point (orthogonal projection center point) of the on-chip microlens are preferably larger. The orthogonal projection image of the center point (orthogonal projection center point) of the first electrode layer, the orthogonal projection image of the center point (orthogonal projection center point) of the organic layer, and the orthogonal projection image of the center point (orthogonal projection center point) of the on-chip microlens are preferably located on a substantially straight line. The first electrode layer contacts a portion of the organic layer. Specifically, it can be configured so that the size of the first electrode layer is smaller than the size of the organic layer, or the size of the first electrode layer is the same as the size of the organic layer, but the insulating material film is formed at the portion between the first electrode layer and the organic layer. Alternatively, it can be configured so that the size of the first electrode layer is larger than the size of the organic layer.

[0069] In addition, the light emitting element of the embodiment of the present disclosure including the above-mentioned preferred form / configuration can be configured so that when the recessed portion is cut with a virtual plane including the axis of the recessed portion, the cross-sectional shape of the recessed portion is a part of a smooth curve or a trapezoidal shape. Alternatively, it can be configured so that the cross-sectional shape is a combination of a linear inclined surface and a bottom defining a smooth curve.

[0070] In addition, the light-emitting element and the like of the embodiment of the present disclosure including the above-mentioned preferred form / configuration may have such a form that when the recessed portion is cut with a virtual plane including the axis of the recessed portion, the cross-sectional shape from the edge portion of the recessed portion to the surface of the base includes a smooth curve. That is, the edge portion of the recessed portion is preferably rounded, and therefore, disconnection is less caused at each layer formed on the recessed portion.

[0071] In addition, the light emitting element and the like of the embodiments of the present disclosure including the above-mentioned preferred forms / configurations may be, but are not limited to, a form in which the shape of the edge portion of the recessed portion is circular or elliptical. When it is assumed that the diameter of a circle having an area equal to the area of ​​the shape of the orthogonal projection image of the recessed portion is R and the depth of the recessed portion is D p When

[0072] 1 / 4≤Dp / R≤1 / 2.

[0073] In addition, the light-emitting element of the embodiment of the present disclosure including the above-mentioned preferred form / configuration may be in the form of an organic layer emitting white light. In this case, the organic layer may be in the form of a multilayer structure having a red light emitting layer, a green light emitting layer, and a blue light emitting layer. Alternatively, the organic layer may have a structure in which a blue light emitting layer configured to emit blue light and a yellow light emitting layer configured to emit yellow light are stacked on each other, thereby emitting white light as a whole. Alternatively, a structure may be adopted in which a blue light emitting layer configured to emit blue light and an orange light emitting layer configured to emit orange light are stacked on each other. Therefore, the organic layer emits white light as a whole. A common organic layer may be used for multiple light-emitting elements, or an organic layer may be provided separately on each light-emitting element.

[0074] Examples of materials for forming a planarization layer may include materials for adjusting (increasing) the refractive index by adding TiO2 to a substrate including an acrylic-based resin and materials for adjusting (increasing) the refractive index by adding TiO2 to a substrate including the same type of material as a color resist material (note that a transparent colorless material without added pigment). In addition, examples of materials for forming a protective film may include SiN, SiON, Al2O3, and TiO2. In addition, examples of preferred combinations of (materials for forming a planarization layer, materials for forming a protective film) may include (acrylic-based resin, single SiN layer), (multilayer structure of acrylic-based resin, SiN layer and Al2O3 layer), (multilayer structure of acrylic-based resin, SiN layer, Al2O3 layer and TiO2 layer), and (acrylic-based resin, single Al2O3 layer). In the method for forming a planarization layer or a protective film, it can be formed based on well-known methods, for example, various CVD methods, various coating methods, various PVD methods including sputtering methods and vacuum deposition methods, and various printing methods including screen printing methods. In addition, as a method of forming the protective film, an atomic layer deposition (ALD) method may be employed. A common planarization layer and protective film may be used for a plurality of light emitting elements, or a planarization layer and protective film may be provided individually for each light emitting element.

[0075] As a method of providing a recessed portion on the surface of the base, an etch-back method may be adopted. That is, after a resist layer has been formed on the surface of the base and a shape for forming the recessed portion has been provided to the resist layer, the resist layer and the base are dry-etched based on, for example, an RIE method, and in this way, the recessed portion can be formed on the surface of the base. Alternatively, after a resist layer having an opening has been formed on the surface of the base, the base is wet-etched, for example, via the opening provided at the resist layer, and in this way, the recessed portion can be formed on the surface of the base.

[0076] The display device of the embodiment of the present disclosure including the above-mentioned various preferred forms / configurations may include an organic electroluminescent display device (organic EL display device). In addition, the light-emitting element of the embodiment of the present disclosure including the above-mentioned various preferred forms / configurations may include an organic electroluminescent element (organic EL element).

[0077] In the light-emitting element of the embodiment of the present disclosure, as described above, the organic layer may be in such a form that the organic layer includes at least two light-emitting layers configured to emit light of different colors. In this case, the light emitted from the organic layer may be in the form of white light. Specifically, the organic layer may have a structure such that a red light emitting layer configured to emit red light (wavelength: 620nm to 750nm), a green light emitting layer configured to emit green light (wavelength: 495nm to 570nm), and a blue light emitting layer configured to emit blue light (wavelength: 450nm to 495nm) are stacked on each other, so that white light is emitted as a whole. Alternatively, a structure may be adopted in which a blue light emitting layer configured to emit blue light and a yellow light emitting layer configured to emit yellow light are stacked on each other. Therefore, the organic layer emits white light as a whole. Alternatively, a structure may be adopted in which a blue light emitting layer configured to emit blue light and an orange light emitting layer configured to emit orange light are stacked on each other. Therefore, the organic layer emits white light in its entirety. In addition, the organic layer configured to emit white light and the red color filter layer (or the planarization layer used as the red color filter) are combined to form a red light-emitting element. The organic layer configured to emit white light and the green color filter layer (or the planarization layer used as the green color filter) are combined to form a green light-emitting element. The organic layer configured to emit white light and the blue color filter layer (or the planarization layer used as the blue color filter) are combined to form a blue light-emitting element. In addition, a combination of sub-pixels such as a red light-emitting element, a green light-emitting element, and a blue light-emitting element forms a single pixel. In some cases, a red light-emitting element, a green light-emitting element, a blue light-emitting element, and a light-emitting element configured to emit white light (or a light-emitting element configured to emit complementary color light) can form a single pixel. In the form where the organic layer includes at least two light-emitting layers configured to emit light of different colors, there is actually a situation where the light-emitting layers configured to emit light of different colors are mixed and are not clearly separated into each layer.

[0078] Alternatively, the organic layer may have a form in which the organic layer includes a single-layer light-emitting layer. In this case, the light-emitting element may include, for example, a red light-emitting element having an organic layer with a red light-emitting layer, a green light-emitting element having an organic layer with a green light-emitting layer, or a blue light-emitting element having an organic layer with a blue light-emitting layer. In the case of a display device for color display, these three types of light-emitting elements (sub-pixels) form a single pixel. Alternatively, the organic layer may include a multilayer structure of a red light-emitting element having an organic layer with a red light-emitting layer, a green light-emitting element having an organic layer with a green light-emitting layer, and a blue light-emitting element having an organic layer with a blue light-emitting layer.

[0079] The black matrix layer can be formed between the color filter layer and the color filter layer or between the light emitting element and the light emitting element. For example, the black matrix layer includes a black resin film (specifically, for example, a black polyimide resin) mixed with a black colorant and having an optical density equal to or greater than 1, or a thin film filter using thin film interference. The thin film filter is configured, for example, so that two or more layers of thin films including metal, metal nitride or metal oxide are stacked on each other, and is configured to attenuate light using the interference of the thin film. Specifically, the thin film filter can be configured so that Cr and chromium (III) oxide (Cr2O3) are alternately stacked on each other.

[0080] In the light-emitting element of the embodiment of the present disclosure, etc., a base is formed on or above a first substrate. Examples of materials forming the base may include insulating materials, such as SiO2, SiN, and SiON. Alternatively, an insulating layer formed on or above the base, etc. and an insulating material having an etching selectivity ratio may form the base. The base may be formed based on a forming method of a material suitable for forming the base, specifically, for example, well-known methods such as various CVD methods, various coating methods, various PVD methods including a sputtering method and a vacuum deposition method, various printing methods including a screen printing method, an electroplating method, an electrodeposition method, an immersion method, and a sol-gel method.

[0081] The light emitting element driving unit is arranged below the base, but is not limited thereto. For example, the light emitting element driving unit includes a transistor (specifically, for example, a MOSFET) formed on a silicon semiconductor substrate forming the first substrate or a thin film transistor (TFT) arranged on various substrates forming the first substrate. The transistor or TFT forming the light emitting element driving unit and the first electrode layer may be in such a form that the transistor or TFT and the first electrode layer are connected via a contact hole (contact plug) formed at a base or the like. The light emitting element driving unit may have a well-known circuit configuration. The second electrode layer is connected to the light emitting element driving unit at the peripheral portion of the display device via a contact hole (contact plug) formed at a base or the like. The light emitting element is formed on the first substrate side. The second electrode layer may be a common electrode layer of a plurality of light emitting elements. That is, the second electrode layer may be a so-called solid electrode.

[0082] The display device of the embodiment of the present disclosure is a top emission (top surface emission) display device (top surface emission display device) configured to emit light from the second substrate. In the top surface emission display device, a color filter layer and a black matrix layer can be formed, for example, above the first substrate.

[0083] In the display device of the embodiment of the present disclosure, a triangle arrangement may be used as a pixel (or sub-pixel) arrangement. Alternatively, a stripe arrangement, a diagonal arrangement, a rectangular arrangement or a pen-shaped arrangement may be used.

[0084] The first substrate or the second substrate may include a silicon semiconductor substrate, a high deformation point glass substrate, a soda-lime glass (Na2O·CaO·SiO2) substrate, a borosilicate glass (Na2O·B2O3·SiO2) substrate, a forsterite (2MgO·SiO2) substrate, a lead glass (Na2O·PbO·SiO2) substrate, various glass substrates with an insulating material layer formed on the surface, a quartz substrate, a quartz substrate with an insulating material layer formed on the surface, and an organic polymer (in the form of a polymer material, for example, a plastic film, a plastic sheet, and a plastic substrate containing a polymer material and showing flexibility), including, for example, polymethyl methacrylate (PMMA), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES), polyimide, polycarbonate, and polyethylene terephthalate (PET). The materials forming the first substrate and the second substrate may be the same or different from each other. Note that the second substrate has been required to be transparent to the light from the light-emitting element.

[0085] In the case where the first electrode layer is used as an anode, the material forming the first electrode layer may include, for example, a metal or alloy having a high work function (for example, an Ag-Pd-Cu alloy including silver as a main component, 0.3 mass % to 1 mass % of palladium (Pd), and 0.3 mass % to 1 mass % of copper (Cu) or an Al-Nd alloy), for example, platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), and tantalum (Ta). In addition, in the case of using a conductive material having a small work function value and high optical reflectivity, for example, aluminum (Al) and an alloy including aluminum, an appropriate hole injection layer is provided to improve the hole injection characteristics, and in this way, it is usable to be used as an anode. The thickness of the first electrode layer may be, for example, 0.1 μm to 1 μm. Alternatively, in the case of providing a light reflection layer described later, the material forming the first electrode layer may include, for example, various transparent conductive materials, for example, indium oxide, indium tin oxide (including ITO, indium tin oxide, Sn-doped In2O3, crystalline ITO and amorphous ITO), indium zinc oxide (IZO, indium zinc oxide), indium gallium oxide (IGO), indium-doped gallium zinc oxide (IGZO, In-GaZnO4), IFO (fluorine-doped In2O3), ITiO (titanium-doped In2O3), InSn, InSnZnO, tin oxide (SnO2), ATO (antimony-doped SnO2), FTO (fluorine-doped SnO2), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), boron-doped ZnO, AlMgZnO (zinc oxide doped with aluminum oxide and magnesium oxide), antimony oxide, titanium oxide, NiO, spinel-type oxides, oxides with a YbFe2O4 structure, gallium oxide, titanium oxide, niobium oxide, and nickel oxide as transparent conductive materials for the base layer. Alternatively, a structure can be adopted in which a transparent conductive material (e.g., indium tin oxide (ITO) or indium zinc oxide (IZO)) showing excellent hole injection characteristics is stacked on a dielectric multilayer film or a reflective film showing high optical reflectivity, such as aluminum (Al). On the other hand, in the case where the first electrode layer is used as a cathode, the first electrode layer preferably includes a conductive material having a small work function value and a high optical reflectivity. However, an appropriate electron injection layer is provided at, for example, a conductive material used as an anode and having high optical reflectivity to improve electron injection characteristics. In this way, use as a cathode is possible.

[0086] In the case where the second electrode layer is used as a cathode, the material (semi-transmissive material or transmissive material) forming the second electrode layer preferably includes a conductive material having a small work function value, thereby allowing the emitted light to be transmitted, and the electrons can be effectively injected into the organic layer (light-emitting layer). Examples of materials may include metals or alloys having a small work function, such as aluminum (Al), silver (Ag), magnesium (Mg), calcium (Ca), sodium (Na), strontium (Sr), alkali metals or alkaline earth metals and silver (Ag) [for example, alloys of magnesium (Mg) and silver (Ag) (Mg-Ag alloy)], magnesium-calcium alloys (Mg-Ca alloys) and alloys of aluminum (Al) and lithium (Li) (Al-Li alloys). Among these materials, Mg-Ag is preferred, and the volume ratio between magnesium and silver can be, for example, Mg:Ag=5:1 to 30:1. Alternatively, the volume ratio between magnesium and calcium can be, for example, Mg:Ca=2:1 to 10:1. The thickness of the second electrode layer can be, for example, 4nm to 50nm, preferably 4nm to 20nm, and more preferably 6nm to 12nm. Alternatively, the second electrode layer may have, for example, a multilayer structure of the above-mentioned material layers and a so-called transparent electrode (for example, a layer with a thickness of 3×10 -8 m to 1×10 -6 m), including ITO or IZO in sequence from the organic layer side. A bus electrode (auxiliary electrode) including a low-resistance material such as aluminum, aluminum alloy, silver, silver alloy, copper, copper alloy, gold or gold alloy may be provided on the second electrode layer to reduce the resistance on the entire second electrode layer. The average light transmittance of the second electrode layer is 50% to 90%, and preferably 60% to 90%. On the other hand, in the case where the second electrode layer is used as an anode, the second electrode layer preferably includes a conductive material that allows transmission of emitted light and has a large work function value.

[0087] The method for forming the first electrode layer or the second electrode layer may include, for example, a vapor deposition method including an electron beam deposition method, a hot wire deposition method, and a vacuum deposition method, a sputtering method, a chemical vapor deposition method (CVD method) or an MOCVD method, a combination of an ion plating method and an etching method, various printing methods (for example, a screen printing method, an inkjet printing method, and a metal mask printing method), an electroplating method (electroplating method or electroless plating method), a stripping method, a laser abrasion method, and a sol-gel method. According to various printing methods and electroplating methods, a first electrode layer and a second electrode layer having a desired shape (pattern) can be directly formed. Note that, specifically, in the case of forming the second electrode layer after forming the organic layer, in consideration of preventing damage to the organic layer, it is preferred to perform such formation based on a film forming method with low film forming particle energy (for example, a vacuum deposition method) or a film forming method such as an MOCVD method. When damage occurs in the organic layer, it is possible that a non-luminous pixel (or non-luminous sub-pixel) called a "dark spot" may result due to current leakage.

[0088] The organic layer includes a light-emitting layer having an organic light-emitting material. Specifically, the organic layer may include, for example, a multilayer structure of a hole transport layer, a light-emitting layer and an electron transport layer, a multilayer structure of a hole transport layer and a light-emitting layer also used as an electron transport layer, a hole injection layer, a hole transport layer, a light-emitting layer, a multilayer structure of an electron transport layer and an electron injection layer, etc. The method for forming the organic layer may include, for example, a physical vapor deposition method (PVD method) (for example, a vacuum deposition method), a printing method (for example, a screen printing method and an inkjet printing method), a laser transmission method (for irradiating a laser absorption layer and a multilayer structure of an organic layer formed on a transmission substrate with a laser to separate the organic layer on the laser absorption layer, thereby transmitting the organic layer) and various coating methods. In the case of forming an organic layer based on a vacuum deposition method, the organic layer can be obtained in such a way that, for example, a material having passed through an opening provided at the so-called metal mask is deposited using a metal mask.

[0089] The light shielding layer can be arranged between the light emitting element and the light emitting element. Specifically, the light shielding material forming the light shielding layer can specifically include a material capable of shielding light, for example, titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), aluminum (Al) and MoSi2. The light shielding layer can be formed by a vapor deposition method including an electron beam deposition method, a hot wire deposition method and a vacuum deposition method, a sputtering method, a CVD method, an ion plating method, and the like.

[0090] On the outermost surface of the display device configured to emit light (specifically, the outer surface of the second substrate), an ultraviolet absorption layer, an anti-pollution layer, a hard coating layer, and an anti-charging layer may be formed, or a protective element (eg, cover glass) may be provided.

[0091] In the display device of the embodiment of the present disclosure, an insulating layer or an interlayer insulating layer is formed. The insulating material forming these layers may include, for example, SiO-based X Materials (materials forming silicon-based oxide films) (e.g., SiO2, non-doped silicate glass (NSG), borophosphosilicate glass (BPSG), PSG, BSG, AsSG, SbSG, PbSG, spin-on glass (SOG), low-temperature oxide (LTO, low-temperature CVD-SiO2), low-melting-point glass and glass paste), silicon nitride-based materials including SiON-based materials, SiOC, SiOF and SiCN. Alternatively, the insulating material may include an inorganic insulating material, such as titanium oxide (TiO2), tantalum oxide (Ta2O5), aluminum oxide (Al2O3), magnesium oxide (MgO), chromium oxide (CrO X ), zirconium oxide (ZrO2), niobium oxide (Nb2O5), tin oxide (SnO2) and vanadium oxide (VO X) Optionally, the insulating material may include, for example, various types of resins (e.g., polyimide-based resins, epoxy-based resins, and acrylic resins) and low dielectric constant insulating materials (e.g., materials having a dielectric constant k (= ε / ε0) equal to or less than 3.5, such as, specifically, fluorocarbons, perfluoropolymers, benzocyclobutene, cyclo-fluororesins, polytetrafluoroethylene, amorphous tetrafluoroethylene, polyarylethers, fluorinated aryl ethers, fluorinated polyimides, amorphous carbon, parylene (poly-p-xylylene), and fluorinated fullerenes), such as SiOCH, organic SOG, and fluorine-based resins. In addition, the insulating material may include, for example, Silk (a trademark of The Dow Chemical Co. and a coating-type low dielectric constant interlayer insulating film material) and Flare (a trademark of Honeywell Electronic Materials Co. and a polyarylether (PAE)-based material). Further, these materials may be used alone or in combination as needed. In some cases, the base or the insulating material film may include the above materials. The insulating layer, the interlayer insulating layer, the base, and the insulating material film may be formed based on well-known methods, such as various CVD methods, various coating methods, various PVD methods including sputtering methods and vacuum deposition methods, various printing methods (e.g., screen printing methods), electroplating methods, electrodeposition methods, dipping methods, and sol-gel methods.

[0092] In order to further improve the light extraction efficiency, the organic EL display device preferably has a resonator structure. Specifically, the light emitted from the light-emitting layer resonates between a first interface formed by the interface between the first electrode layer and the organic layer (or a first interface formed by the interface between a light reflection layer provided under the first electrode layer and a part of the interlayer insulating layer located on the light reflection layer) and a second interface formed by the interface between the second electrode layer and the organic layer, and part of the resulting light is emitted from the second electrode layer. The light reflection layer provided under the first electrode layer and the interlayer insulating layer located on the light reflection layer also form along the shape of the top surface of the recess. Further, when the distance from the maximum light-emitting position of the light-emitting layer to the first interface is L1, the optical distance is OL1, the distance from the maximum light-emitting position of the light-emitting layer to the second interface is L2, the optical distance is OL2, and m1 and m2 are integers, the following expressions (1-1), (1-2), (1-3), and (1-4) are satisfied:

[0093] 0.7{-Φ1 / (2π)+m1}≤2×OL1 / λ≤1.2{-Φ1 / (2π)+m1}(1-1);

[0094] 0.7{-Φ2 / (2π)+m2}≤2×OL2 / λ≤1.2{-Φ2 / (2π)+m2}(1-2);

[0095] L1<L2(1-3); and

[0096] m1 <m2(1-4)),

[0097] Wherein, λ: the maximum peak wavelength of the spectrum of light generated from the light emitting layer (or the desired wavelength in the light generated from the light emitting layer),

[0098] Φ1: Phase shift of light reflected on the first interface (unit: radian),

[0099] Note that -2π<Φ1≤0, and

[0100] Φ2: Phase shift of light reflected on the second interface (unit: radian),

[0101] Note that -2π<Φ2≤0.

[0102] A form may be adopted herein in which m1=0 and m2=1 are satisfied for maximally improving the light extraction efficiency.

[0103] The distance L1 from the maximum light emission position of the light-emitting layer to the first interface represents the actual distance (physical distance) from the maximum light emission position of the light-emitting layer to the first interface, and the distance L2 from the maximum light emission position of the light-emitting layer to the second interface represents the actual distance (physical distance) from the maximum light emission position of the light-emitting layer to the second interface. In addition, the optical path is also called the optical path length. When the light beam passes through a medium with a refractive index of n multiplied by a distance L, the optical path length is usually expressed as n×L. The same applies to the following description. Therefore, when the average refractive index is n ave , there exists a relationship in which

[0104] OL1=L1×n ave ,as well as

[0105] OL2=L2×n ave .

[0106] In this relationship, the average refractive index n is obtained in such a way that ave , such that the product of the refractive index and the thickness of each layer forming the organic layer (or the organic layer and the interlayer insulating layer) is added, and the resulting value is divided by the thickness of the organic layer (or the organic layer and the interlayer insulating layer).

[0107] The first electrode layer or the light reflecting layer and the second electrode layer absorb part of the incident light and reflect the remaining incident light. Therefore, a phase shift is caused in the reflected light. These phase shift amounts Φ1 and Φ2 can be obtained in such a way that the values ​​of the real part and the imaginary part of the complex refractive index of the material forming the first electrode or the light reflecting layer and the second electrode layer are measured using, for example, an ellipsometer, and calculations are performed based on these values ​​(see, for example, "Principles of Optic", Max Born and Emil Wolf, 1974 (PERGAMON PRESS)). The refractive index of the organic layer, the interlayer insulating layer, etc. can also be obtained by measurement using an ellipsometer.

[0108] The material forming the light reflection layer may include, for example, aluminum, aluminum alloy (e.g., Al-Nd or Al-Cu), Al / Ti multilayer structure, Al-Cu / Ti multilayer structure, chromium (Cr), silver (Ag) and silver alloy (e.g., Ag-Pd-Cu, Ag-Sm-Cu). For example, the light reflection layer may be formed by a vapor deposition method including an electron beam deposition method, a hot wire deposition method and a vacuum deposition method, a sputtering method, a CVD method, an ion plating method, an electroplating method (electroplating method or electroless plating method), a stripping method, a laser abrasion method, a sol-gel method, etc.

[0109] As described above, in an organic EL display device having a resonator structure, a red light-emitting element including a combination of an organic layer configured to emit white light and a red filter layer (or a planarization layer used as a red filter) actually causes the red light emitted from the light-emitting layer to resonate, thereby emitting red light (light with a spectral peak in the red range) from the second electrode layer. In addition, a green light-emitting element including a combination of an organic layer configured to emit white light and a green filter layer (or a planarization layer used as a green filter) causes the green light emitted from the light-emitting layer to resonate, thereby emitting green light (light with a spectral peak in the green range) from the second electrode layer. In addition, a blue light-emitting element including a combination of an organic layer configured to emit white light and a blue filter layer (or a planarization layer used as a blue filter) causes the blue light emitted from the light-emitting layer to resonate, thereby emitting blue light (light with a spectral peak in the blue range) from the second electrode layer. That is, the desired wavelength λ (specifically, the wavelength of red, the wavelength of green, and the wavelength of blue) in the light generated from the light-emitting layer is determined, and various parameters in each red light-emitting element, green light-emitting element, and blue light-emitting element, such as OL1 and OL2, are obtained based on expressions (1-1), (1-2), (1-3), and (1-4). In this way, each light-emitting element can be designed. For example, paragraph

[0041] of JP 2012-216495A discloses an organic EL element with a resonator structure, in which the organic layer is used as a resonator, and the distance from the light-emitting point to the reflective surface can be appropriately adjusted. Therefore, this is described as making the thickness of the organic layer preferably equal to or greater than 80nm and equal to or less than 500nm, more preferably equal to or greater than 150nm and equal to or less than 350nm.

[0110] In an organic EL display device, the thickness of the hole transport layer (hole supply layer) and the thickness of the electron transport layer (electron supply layer) are preferably substantially equal to each other. Optionally, the electron transport layer (electron supply layer) may be thicker than the hole transport layer (hole supply layer). Through this configuration, sufficient electrons required to improve efficiency can be provided to the light-emitting layer with a low driving voltage. That is, the hole transport layer is arranged between the first electrode layer equivalent to the anode and the light-emitting layer, and is formed to have a thickness smaller than that of the electron transport layer. Therefore, the hole supply can be increased. In addition, through this configuration, a carrier balance is obtained, so that the carrier supply is large enough without excessive or insufficient holes and electrons. Therefore, a high luminous efficiency can be obtained. In addition, since there is no excess or deficiency of holes and electrons, the carrier balance is less destroyed, the degradation of the drive can be reduced, and the luminous life can be extended.

[0111] The display device can be used, for example, as a monitor device forming a personal computer, or can be used as a monitor device included in a television image receiver, a mobile phone, a personal digital assistant (PDA), and a game console. Optionally, the display device can be applied to an electronic viewfinder (EVF) or a head-mounted display (HMD). Optionally, the display device can form an image display device in an electronic book, an electronic paper (e.g., an electronic newspaper), a sign, a poster, a bulletin board (e.g., a blackboard), a rewritable paper replacing printing paper, a display of a household appliance, a card display (e.g., a club card), an electronic advertisement, and an electronic POP. The display device of an embodiment of the present disclosure can be used as a light-emitting device to form various lighting devices, including a backlight device or a planar light source device for a liquid crystal display device.

[0112] Head mounted displays include e.g.

[0113] (a) a frame attached to the viewer's head, and

[0114] (b) an image display device connected to the frame,

[0115] The image display device includes

[0116] (A) a display device according to an embodiment of the present disclosure, and

[0117] (B) an optical device into which light emitted from the display device of the embodiment of the present disclosure enters and from which the light is emitted, and

[0118] The optical device comprises

[0119] (B-1) a light guide plate configured so that light entering from the display device of an embodiment of the present disclosure is emitted to an observer after propagating to the inside by total reflection,

[0120] (B-2) a first polarizing unit (including, for example, a volume hologram diffraction grating film) configured to polarize the light that has entered the light guide plate so that the light that has entered the light guide plate is totally reflected inside the light guide plate, and

[0121] (B-3) A second polarizing unit (including, for example, a volume hologram diffraction grating film) configured to multiply polarize light propagating inside the light guide plate by total reflection so that the light propagating inside the light guide plate by total reflection is emitted from the light guide plate.

[0122] First embodiment

[0123] The first embodiment relates to a light emitting element according to an embodiment of the present disclosure and a display device according to an embodiment of the present disclosure. Figure 1 A schematic partial cross-sectional view showing the light emitting element of the first embodiment. Figure 2 Shows Figure 1Illustration of light trajectories in a schematic partial end view of a light emitting element of a first embodiment shown, except for some hatching. Figure 3 A schematic partial end view of a display device of a first embodiment is shown. Specifically, the display device of the first embodiment includes an organic EL display device, and specifically, the light-emitting element of the first embodiment includes an organic EL element. In addition, the display device of the first embodiment is a top-emitting (top surface-emitting) display device (top surface-emitting display device) configured to emit light from a second substrate.

[0124] The light emitting element 10 (10R, 10G, 10B) of the first embodiment includes at least:

[0125] Base 26,

[0126] The recessed portion 27 is provided at the surface 26A of the base 26,

[0127] The first electrode layer 31 is formed at least partially along the shape of the top surface of the recessed portion 27,

[0128] The organic layer 33 is formed on the first electrode layer 31 at least partially along the shape of the top surface of the first electrode layer 31,

[0129] a second electrode layer 32 formed on the organic layer 33 along the shape of the top surface of the organic layer 33, and

[0130] The planarization layer 35 is formed on the second electrode layer 32 .

[0131] Light from the organic layer 33 is emitted to the outside via the second electrode layer 32 and the planarization layer 35 .

[0132] Furthermore, the display device of the first embodiment includes:

[0133] a first substrate 11 and a second substrate 41, and

[0134] The plurality of light emitting elements 10 ( 10R, 10G, 10B) are located between the first substrate 11 and the second substrate 41 , are provided on the base 26 formed on the first substrate 11 , and are arranged in a two-dimensional manner.

[0135] Each light emitting element 10 (10R, 10G, 10B) includes at least:

[0136] The recessed portion 27 is provided on the surface of the base 26.

[0137] The first electrode layer 31 is formed at least partially along the shape of the top surface of the recessed portion 27,

[0138] an organic layer 33 formed on the first electrode layer 31 at least partially along the shape of the top surface of the first electrode layer 31,

[0139] a second electrode layer 32 formed on the organic layer 33 along the shape of the top surface of the organic layer 33, and

[0140] The planarization layer 35 is formed on the second electrode layer 32 .

[0141] Light from the organic layer 33 is emitted to the outside via the second electrode layer 32 , the planarization layer 35 , and the second substrate 41 .

[0142] In the light emitting element of the first embodiment, in the recess 27 , the entire first electrode layer 31 is formed along the shape of the top surface of the recess 27 , and the entire organic layer 33 is formed on the first electrode layer 31 along the shape of the top surface of the first electrode layer 31 .

[0143] In the light emitting element 10 of the first embodiment, the protective film 34 is formed between the second electrode layer 32 and the planarization layer 35. The protective film 34 is formed along the shape of the top surface of the second electrode layer 32. When the refractive index of the material forming the planarization layer 35 is n1 and the refractive index of the material forming the protective film 34 is n2, n1>n2 is satisfied. For example, the value of (n1-n2) can be, but is not limited to, 0.1 to 0.6. Specifically, the material forming the planarization layer 35 is a material in which the refractive index is adjusted (increased) by adding TiO2 to a substrate including an acrylic-based resin or a material in which the refractive index is adjusted (increased) by adding TiO2 to a substrate including a material of the same type as the color resist material (note, a transparent colorless material without added pigment), and the material forming the protective film 34 includes SiN, SiON, Al2O3, or TiO2. Note that, for example,

[0144] n1 = 2.0, and

[0145] n2=1.6.

[0146] By using this protective film 34, Figure 2 As shown, part of the light emitted from the organic layer 33 passes through the second electrode layer 32 and the protective film 34 to enter the planarization layer 35, and part of the light emitted from the organic layer 33 is reflected on the first electrode layer 31 to enter the planarization layer 35 through the second electrode layer 32 and the protective film 34. As described above, the protective film 34 and the planarization layer 35 may form an internal lens, and therefore, the light emitted from the organic layer 33 may be gathered in a direction toward the center side of the light emitting element.

[0147] Alternatively, in the light emitting element of the first embodiment, when the incident angle of light emitted from the organic layer 33 and entering the planarization layer 35 through the second electrode layer 32 is θi And the refraction angle of the light that has entered the planarization layer 35 is θ r When |θ r When |≠0, it satisfies

[0148] |θ i |>|θ r |.

[0149] When these conditions are met, a portion of the light emitted from the organic layer 33 passes through the second electrode layer 32 to enter the planarization layer 35, and a portion of the light emitted from the organic layer 33 is reflected on the first electrode layer 31 to enter the planarization layer 35 through the second electrode layer 32. Since the internal lens is formed as described above, the light emitted from the organic layer 33 can be concentrated in a direction toward the center side of the light emitting element.

[0150] If the recessed portion is not formed and the first electrode layer, the organic layer and the second electrode layer form a flat multilayer structure, the light emitted from the organic layer spreads more outside the light emitting element than the light emitting element of the first embodiment, and it is difficult to improve the efficiency of extracting front light.

[0151] Furthermore, in the light emitting element of the first embodiment, an on-chip microlens 36 including a well-known material is provided on or over the top surface of the planarization layer 35 (specifically, over the planarization layer 35, and more specifically, a color filter layer CF described later formed on the planarization layer 35) by a well-known method. R CF G and CF B When the recessed portion 27 is cut along a virtual plane including the axis AX of the recessed portion 27, the cross-sectional shape of the recessed portion 27 is a smooth curve (particularly an arc). When the recessed portion 27 is cut along the virtual plane, the cross-sectional shape from the edge of the recessed portion 27 to the surface of the base 26 is a smooth curve. That is, the edge 27A of the recessed portion 27 is circular. The shape (planar shape) of the edge of the recessed portion 27 is circular or elliptical, but in the case of a circular shape, the light reflection efficiency at the first electrode layer 31 can be further improved.

[0152] Color filter layer CF R CF G and CF B And the on-chip microlens 36 is bonded to the second substrate 41 via the sealing resin layer 37. The material forming the sealing resin layer 37 may include, for example, a thermosetting adhesive and an ultraviolet curing adhesive, such as an acrylic-based adhesive, an epoxy-based adhesive, a urethane-based adhesive, a silicone-based adhesive, and a cyanoacrylate-based adhesive. Color filter layer CF R CF G and CF BIt is an on-chip color filter (OCCF) layer formed on the first substrate side. In addition, with this configuration, the distance between the organic layer and the color filter layer CF can be shortened, color mixing caused by light emitted from the organic layer entering the adjacent color filter layer CF of other colors can be reduced, and a wide range of lens design of on-chip microlenses can be obtained.

[0153] In the light emitting element 10 of the first embodiment including the organic EL element, the organic layer 33 has a multilayer structure of a red light emitting layer, a green light emitting layer, and a blue light emitting layer. A single pixel includes three light emitting elements, a red light emitting element 10R, a green light emitting element 10G, and a blue light emitting element 10B. The organic layer 33 forming the light emitting element 10 is configured to emit white light, and each of the light emitting elements 10R, 10G, and 10B includes an organic layer 33 configured to emit white light and each color filter layer CF R CF G and CF B The red light emitting element 10R for displaying red includes a red color filter layer CF R The green light emitting element 10G for displaying green includes a green color filter layer CF G The blue light emitting element 10B for displaying blue includes a blue color filter layer CF B . The red light emitting element 10R, the green light emitting element 10G, and the blue light emitting element 10B have the same configuration / structure except for the positions of the color filter layer and the light emitting layer. In addition, the black matrix layer BM is provided between the color filter layer CF and the color filter layer CF. The black matrix layer BM includes, for example, a black resin film (specifically, for example, a black polyimide resin) mixed with a black colorant and having an optical density equal to or greater than 1. For example, the number of pixels is 1920×1080, a single light emitting element (single display element) includes a single sub-pixel, and the light emitting element (specifically, an organic EL element) is three times the number of pixels. In the display device of the first embodiment, Fig.14A The triangle arrangement shown can be used as the sub-pixel arrangement. Note that, for example, Fig. 14B , Fig. 14C and Fig.14D In some cases, a red light-emitting element, a green light-emitting element, a blue light-emitting element, and a light-emitting element configured to emit white light (or a light-emitting element configured to emit complementary color light) can form a single pixel.

[0154] Fig.15A , Fig. 15B , Fig. 15C and Fig.15D The first electrodes 31R, 31G and 31B and the color filter layer CF are schematically shown. R CF G and CFB Note that Fig. 15B and Fig.15D In the color filter layer CF R CF G and CF B Specifically, for the purpose of eye movement (paying attention to viewing angle and color) as in an electronic viewfinder, the color filter layers CF in the red light emitting element, the green light emitting element, and the blue light emitting element are adjusted. R CF G and CF B and the sizes of the first electrodes 31R, 31G and 31B. Specifically, Fig.15A and Fig. 15B As shown, adjustments are made to meet

[0155] (Width of the first electrode of the read light-emitting element)=(Width of the first electrode of the green light-emitting element)>(Width of the first electrode of the blue light-emitting element).

[0156] In this way, the viewing angle of the red light emitting element, the green light emitting element, and the blue light emitting element including the light emitting element having the organic layer 33 configured to emit white light is used as a parameter to provide substantially the same level of color intensity, and coloration due to the viewing angle can be avoided. Fig. 15C and Fig.15D As shown in the figure, in the case where two blue light emitting elements are arranged diagonally, and the red light emitting element and the green light emitting element are arranged diagonally, it is preferable to cut away the opposing portions of the first electrode 31R forming the red light emitting element and the first electrode 31G forming the green light emitting element. In addition, in order to maintain the viewing angle symmetry associated with the azimuth angle, it is more preferable to cut away a portion of the first electrode 31R of the cutout portion facing the first electrode 31R of the red light emitting element, and it is more preferable to cut away a portion of the first electrode 31G of the cutout portion facing the first electrode 31G of the green light emitting element.

[0157] Based on the CVD method, a light-emitting element driving unit is provided under a base (interlayer insulating layer) 26 containing SiO2. The light-emitting element driving unit may have a well-known circuit configuration. The light-emitting element driving unit includes a transistor (specifically, a MOSFET) formed on a silicon semiconductor substrate equivalent to the first substrate 11. The transistor 20 including the MOSFET includes a gate insulating layer 22 formed on the first substrate 11, a gate electrode 21 formed on the gate insulating layer 22, a source / drain region 24 formed on the first substrate 11, a channel forming region 23 formed between adjacent source / drain regions 24, and an element isolation region 25 surrounding the channel forming region 23 and the source / drain region 24. The transistor 20 and the first electrode layer 31 are electrically connected to each other via a contact plug 28 provided at the base 26. Note that in the figure, a single transistor 20 is shown for a single light-emitting element driving unit.

[0158] The second electrode layer 32 is connected to the light emitting element driving section via a contact hole (contact plug) not shown formed at the base (interlayer insulating layer) 26 at the periphery of the display device. In the periphery of the display device, an auxiliary electrode connected to the second electrode layer 32 may be provided below the second electrode layer 32 and may be connected to the light emitting element driving section.

[0159] The first electrode layer 31 is used as an anode, and the second electrode layer 32 is used as a cathode. The first electrode layer 31 includes a light-reflecting material layer, and specifically includes a multilayer structure of an Al-Nd alloy layer, an Al-Cu alloy layer, an Al-Ti alloy layer and an ITO layer. The second electrode layer 32 includes a transparent conductive material, for example, ITO. The first electrode layer 31 formed by the light-reflecting material layer is formed on the inclined surface of the recessed portion 27, and therefore, the reflectivity change easily caused in the reflector formed by the oxide film in the typical light-emitting element can be reduced. The first electrode layer 31 is formed based on a combination of a vacuum deposition method and an etching method. In addition, the second electrode layer 32 is formed by a film-forming method (for example, a vacuum deposition method) with low film-forming particle energy, and is not patterned. The organic layer 33 is also not patterned. Note that the present disclosure is not limited to the above content, and the organic layer 33 can be patterned. That is, it can be configured so that each sub-pixel is individually coated with an organic layer 33, the organic layer 33 of the red light-emitting element includes an organic layer configured to emit red light, the organic layer 33 of the green light-emitting element includes an organic layer configured to emit green light, and the organic layer 33 of the blue light-emitting element includes an organic layer configured to emit blue light.

[0160] In the first embodiment, the organic layer 33 has a multilayer structure of a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer, an electron transport layer (ETL), and an electron injection layer (EIL). The light emitting layer includes at least two light emitting layers configured to emit light of different colors, and as described above, the light emitted from the organic layer 33 is white light. Specifically, the organic layer has a structure such that a red light emitting layer configured to emit red light, a green light emitting layer configured to emit green light, and a blue light emitting layer configured to emit blue light are stacked on each other. The organic layer may have a structure such that a blue light emitting layer configured to emit blue light and a yellow light emitting layer configured to emit yellow light are stacked on each other, or may have a structure such that a blue light emitting layer configured to emit blue light and an orange light emitting layer configured to emit orange light are stacked on each other.

[0161] The hole injection layer is a layer for improving the hole injection efficiency. In addition, the hole injection layer is used as a buffer layer configured to prevent leakage, and has a thickness of, for example, about 2nm to 10nm. For example, the hole injection layer includes a hexaazatriphenylene derivative represented by the following formula (A) or formula (B). Note that when the end face of the hole injection layer contacts the second electrode layer, this state is the main cause of the brightness change between pixels, resulting in reduced display quality.

[0162]

[0163] Among them, R 1 To R 6 Each of the R groups is independently a substituent selected from hydrogen, halogen, hydroxyl, amino, arylamino, substituted or unsubstituted carbonyl having 20 carbon atoms or less, substituted or unsubstituted carbonyl ester having 20 carbon atoms or less, substituted or unsubstituted alkyl having 20 carbon atoms or less, substituted or unsubstituted alkenyl having 20 carbon atoms or less, substituted or unsubstituted alkoxy having 20 carbon atoms or less, substituted or unsubstituted aryl having 30 carbon atoms or less, substituted or unsubstituted heterocyclic having 30 carbon atoms or less, nitrile, cyano, nitro or silyl. m (m=1 to 6) may be bonded to each other via a ring structure. 1 To X 6 are independently a carbon atom or a nitrogen atom.

[0164]

[0165] The hole transport layer is a layer for improving the efficiency of hole transport to the light emitting layer. When an electric field is applied, re-bonding of electrons and holes occurs in the light emitting layer, thereby generating light. The electron transport layer is a layer for improving the efficiency of electron transport to the light emitting layer, and the electron injection layer is a layer for improving the efficiency of electron injection into the light emitting layer.

[0166] The hole transport layer includes, for example, 4,4',4"-tris(3-methylphenylamino)triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD) with a thickness of about 40 nm.

[0167] The light emitting layer is a light emitting layer configured to emit white light by color mixing, and includes, for example, a stack of a red light emitting layer, a green light emitting layer, and a blue light emitting layer, as described above.

[0168] By applying an electric field, some holes injected from the first electrode layer 31 and some electrons injected from the second electrode layer 32 are re-bonded in the red light emitting layer, and red light is generated. This red light emitting layer includes, for example, a red light emitting material, a hole transport material, an electron transport material, or at least one of these two charge transport materials. The red light emitting material can be a fluorescent material or a phosphorescent material. A red light emitting layer having a thickness of about 5 nm is formed, for example, in such a way that 30% by mass of 2,6-bis[(4'-methoxydiphenylamino)phenylvinyl]-1,5-dicyanonaphthalene (BSN) is mixed with 4,4-bis(2,2-diphenylvinyl)biphenyl (DPVBi).

[0169] By applying an electric field, some holes injected from the first electrode layer 31 and some electrons injected from the second electrode layer 32 are re-bonded in the green light emitting layer, and green light is generated. This green light emitting layer includes, for example, a green light emitting material, a hole transport material, an electron transport material, or at least one of these two charge transport materials. The green light emitting material can be a fluorescent material or a phosphorescent material. A green light emitting layer with a thickness of about 10 nm is formed, for example, in such a way that 5 mass % of coumarin 6 is mixed with DPVBi.

[0170] By applying an electric field, some holes injected from the first electrode layer 31 and some electrons injected from the second electrode layer 32 are re-bonded in the blue light emitting layer, and blue light is generated. This blue light emitting layer includes, for example, a blue light emitting material, a hole transport material, an electron transport material, or at least one of these two charge transport materials. The blue light emitting material can be a fluorescent material or a phosphorescent material. A blue light emitting layer with a thickness of about 30 nm is formed, for example, in such a way that 2.5% by mass of 4,4'-bis[2-{4-(N,N-diphenylamino)phenyl}vinyl]biphenyl (DPAVBi) is mixed with DPVBi.

[0171] The electron transport layer with a thickness of about 20 nm includes, for example, 8-hydroxyquinoline aluminum (Alq3), and the electron injection layer with a thickness of about 0.3 nm includes, for example, LiF, Li2O, and the like.

[0172] Note that the materials forming each layer have been described by way of example, and the present disclosure is not limited to these materials. Alternatively, the light emitting layer may include, for example, a blue light emitting layer and a yellow light emitting layer, or may include a blue light emitting layer and an orange light emitting layer.

[0173] The light emitting element has a resonator structure in which the organic layer 33 functions as a resonator. In order to appropriately adjust the distance from the light emitting surface to the reflective surface (specifically, the distance from the light emitting surface to the first electrode layer 31 and the second electrode layer 32), the thickness of the organic layer 33 is preferably equal to or greater than 8×10 -8 m and is equal to or less than 5×10 -7 m, and more preferably equal to or greater than 1.5×10 -7 m and is equal to or less than 3.5×10 -7 m. In the organic EL display device having a resonator structure, the red light emitting element 10R actually resonates the red light emitted from the light emitting layer, thereby emitting red light (light having a spectral peak in the red range) from the second electrode layer 32. In addition, the green light emitting element 10G resonates the green light emitted from the light emitting layer, thereby emitting green light (light having a spectral peak in the green range) from the second electrode layer 32. In addition, the blue light emitting element 10B resonates the blue light emitted from the light emitting layer, thereby emitting blue light (light having a spectral peak in the blue range) from the second electrode layer 32.

[0174] In the following, reference will be made to Fig.16A , Fig. 16B , Fig. 16C , Fig.17A , Fig. 17B , Fig.18A and Fig.18B As a schematic partial end view of the base, etc., to describe Figure 1 An overview of a method for manufacturing a light-emitting element according to a first embodiment is shown.

[0175] [Step–100]

[0176] First, based on a well-known MOSFET manufacturing process, a light emitting element driving section is formed on a silicon semiconductor substrate (first substrate 11 ).

[0177] [STEP–110]

[0178] Subsequently, a pedestal (interlayer insulating layer) 26 is formed on the entire surface based on a CVD method.

[0179] [Step 120]

[0180] Next, each recessed portion 27 is formed at a portion of the base 26 where a light emitting element is to be formed. Specifically, a mask layer 51 including SiN is formed on the base 26 including SiO2, and a resist layer 52 having a shape for forming the recessed portion is formed on the mask layer 51 (see Fig.16A and Fig. 16B ). Then, the resist layer 52 and the mask layer 51 are etched back, and in this way, the shape formed at the resist layer 52 is transferred to the mask layer 51 (see Fig. 16C ). Then, after forming a resist layer 53 on the entire surface (see Fig.17A ), the resist layer 53, the mask layer 51 and the base 26 are etched back, and in this way, the recessed portion 27 can be formed at the base 26 (see Fig. 17B ). The material of the resist layer 53 is selected as needed, and the etching conditions for etching back the resist layer 53, the mask layer 51, and the base 26 are appropriately set. Specifically, the material system and the etching conditions are selected so that the etching speed of the resist layer 53 is slower than the etching speed of the mask layer 51. In this way, the recessed portion 27 can be formed at the base 26.

[0181] Optionally, a resist layer 54 having an opening 55 is formed on the base 26 (see Fig.18A ). Then, the base 26 is wet-etched through the opening 55, and in this way, the recessed portion 27 can be formed at the base 26 (see Fig.18B ).

[0182] [Step 130]

[0183] Thereafter, a connection hole is formed at a portion of the base 26 located above one source / drain region of the transistor 20 based on the photolithography technique and the etching technique. Then, a metal layer is formed on the base 26 including the recess 27 and the connection hole based on, for example, a sputtering method. Subsequently, the metal layer is patterned based on the photolithography technique and the etching technique, and in this way, the first electrode layer 31 can be formed on the portion of the base 26 including the inside of the recess 27. For each light emitting element, the first electrode layer 31 is isolated. In addition, the first electrode layer 31 is formed along the shape of the top surface of the recess 27, and has the same thickness in the recess 27. In addition, a contact hole (contact plug) 28 configured to electrically connect the first electrode layer 31 and the transistor 20 can be formed in the connection hole.

[0184] [Step 140]

[0185] Next, after the insulating layer 29 is formed on the entire surface based on, for example, a CVD method, the insulating layer 29 remains on the base 26 between the first electrode layer 31 and the first substrate 11 based on the photolithography technique and the etching technique.

[0186] [Step 150]

[0187] Thereafter, an organic layer 33 is formed on the first electrode layer 31 and the insulating layer 29 by a PVD method (e.g., a vacuum deposition method or a sputtering method), a coating method (e.g., a spin coating method or a die coating method), etc. In some cases, the organic layer 33 may be patterned into a desired shape. The organic layer 33 is formed on the first electrode layer 31 along the shape of the top surface of the first electrode layer 31, and has the same thickness in the recessed portion 27.

[0188] [Step 160]

[0189] Subsequently, the second electrode layer 32 is formed on the entire surface based on a vacuum deposition method or the like. In some cases, the second electrode layer 32 may be patterned into a desired shape. In this way, the organic layer 33 and the second electrode layer 32 may be formed on the first electrode layer 31. The second electrode layer 32 is formed on the organic layer 33 along the shape of the top surface of the organic layer 33, and has the same thickness in the recessed portion 27.

[0190] [Step 170]

[0191] Thereafter, a protective film 34 is formed on the entire surface based on, for example, an ALD method. The protective film 34 is formed on the second electrode layer 32 along the shape of the top surface of the second electrode layer 32, and has the same thickness in the recessed portion 27. Subsequently, after a planarization layer 35 is formed on the entire surface based on a coating method, a planarization process is performed on the top surface of the planarization layer 35. Since the planarization layer 35 can be formed based on a coating method, there are fewer restrictions on the formation process, a wider range of material selection, and the use of a high refractive index material is allowed. Thereafter, a color filter layer CF is formed on the planarization layer 35 by a well-known method. R CF G and CF B and a black matrix layer BM, and in each color filter layer CF R CF G and CF B On-chip microlenses 36 are further formed thereon. Then, the color filter layer CF is sealed with a sealing resin layer 37 including an acrylic-based adhesive. R CF G and CF B And the on-chip microlens 36 is bonded to the second substrate 41. In this way, it is possible to obtain Figure 3The organic EL display device shown. As described above, the so-called OCCF type is adopted so that the color filter layer CF is not arranged on the second substrate side but on the first substrate side. Therefore, the distance between the organic layer 33 and the color filter layer CF can be shortened, and the design width of the on-chip microlens 36 and the design freedom of the on-chip microlens 36 can be increased. In addition, by using the on-chip microlens 36, not only can the color mixing between adjacent pixels be prevented, but also light can be released as needed according to the necessary viewing angle. In addition, the so-called OCCF type is adopted, and therefore, there is no problem in position adjustment relative to the organic layer 33.

[0192] A simulation has been performed on how the light-gathering characteristic changes according to the shape of the recessed portion 27. Specifically, in a light-emitting element having a flat multilayer structure of a first electrode layer, an organic layer, and a second electrode layer without a recessed portion, the light-gathering characteristic (i.e., the peak intensity of light emitted from the light-emitting element) is a reference value of "1.00". In addition, it is assumed that in the light-emitting element of the first embodiment, when the recessed portion 27 is orthogonally projected on the base virtual plane, the shape of the orthogonal projection image of the recessed portion 27 is a circle with a diameter of 4 μm, and light is generated in a circular area with a diameter of 1.8 μm at the bottom of the recessed portion 27. Then, first, a simulation is performed assuming that an air layer exists in and above the recessed portion 27. In this case, the depth of the recessed portion 27 is 1.0 μm (condition-1), 1.5 μm (condition-2), and 2.0 μm (condition-3). Under each condition, the light-gathering characteristic of the light-emitting element (i.e., the value of the peak intensity of light emitted from the light-emitting element (relative peak intensity)) is shown in the following Table 1.

[0193] Next, a simulation is performed, assuming that the same structure as the light-emitting element of the first embodiment is adopted. When the recess 27 is orthogonally projected on the virtual plane of the base, the shape of the orthogonal projection image of the recess 27 is a circle with a diameter of 4 μm, the refractive index n1 of the flattening layer 35 is 2.00, and the refractive index n2 of the protective film 34 is 1.50. Here, under condition -4, the depth of the recess 27 is 1.5 μm, and the diameter of the flattening layer in the virtual plane of the base is 3.0 μm. Under condition -5, the depth of the recess 27 is 1.5 μm, and the diameter of the flattening layer in the virtual plane of the base is 2.0 μm. Under each condition, the focusing characteristics of the light-emitting element (i.e., the value of the peak intensity of light emitted from the light-emitting element (relative peak intensity)) are shown in the following Table 1.

[0194]

[0195]

[0196] By using the recessed portion 27, it can be confirmed that under Condition-1 to Condition-3, the front brightness is as high as 2.3 times that of a typical light-emitting element having a flat multilayer structure. Basically, the size of the recessed portion 27 depends on the pixel pitch. Therefore, even when the pixel pitch is changed, if such a ratio (D p / R), a similar advantageous effect can also be obtained. In addition, with the structure of the light-emitting element of the first embodiment, it can be confirmed that the light-collecting property is improved by 3.5 times (see condition-5).

[0197] In the light-emitting element of the first embodiment, a recessed portion is provided on the surface of the base, and the first electrode layer, the organic layer, and the second electrode layer are formed substantially along the shape of the top surface of each recessed portion. In addition, using these recessed portions, the recessed portions can be used as a type of concave mirror. Therefore, the efficiency of extracting front light can be improved, and the current light emission efficiency can be significantly improved. In addition, the manufacturing steps are not significantly increased. In addition, the thickness of the organic layer is a constant thickness, and therefore, a resonator structure can be easily formed. In addition, the thickness of the first electrode layer is a constant thickness, and therefore, phenomena such as coloration and brightness changes that occur in the first electrode layer according to the angle at which the display device is viewed due to changes in the thickness of the first electrode layer can be reduced.

[0198] Note that Figure 1 In the above, other regions other than the recessed portion 27 are formed by the multilayer structure of the first electrode layer 31, the organic layer 33, and the second electrode layer 32, and therefore, light is also emitted from these regions. Therefore, there is a possibility that light collection efficiency is reduced and monochromatic chromaticity is reduced due to light leakage from adjacent pixels. In this case, the boundary between the insulating layer 29 and the first electrode layer 31 is the end of the light-emitting region, and therefore, the light-emitting region can be optimized by optimizing such a boundary.

[0199] Specifically, in a microdisplay with a small pixel pitch, a high front light extraction efficiency can be achieved even when the depth of the recessed portion is reduced and the organic layer is formed in the recessed portion. This is suitable for future mobile applications. The simulation results of the first embodiment show that the current luminous efficiency is improved by 3.5 times that of a typical light-emitting element. Therefore, the life of the light-emitting element and the display device can be extended, and the brightness of the light-emitting element and the display device can be increased. In addition, the applications of glasses, augmented reality (AR) glasses, and EVR have been significantly expanded.

[0200] The greater the depth of the recessed portion, the more light emitted from the organic layer and reflected on the first electrode layer can be gathered in the direction toward the center side of the light-emitting element. However, in the case where the depth of the recessed portion is large, it may be difficult to form an organic layer above the recessed portion. However, the protective film and the planarization layer form an internal lens, so even if the depth of the recessed portion is small, the light reflected on the first electrode layer can be gathered in the direction toward the center side of the light-emitting element. Therefore, the front light extraction efficiency can be further improved. In addition, the internal lens is formed in a self-aligned manner relative to the organic layer, so the position adjustment between the organic layer and the internal lens does not change. In addition, the formation of the recessed portion and the internal lens can increase the angle of the light passing through the color filter layer relative to the virtual plane of the base, so that color mixing between adjacent pixels can be effectively prevented. In addition, this improves the color gamut degradation caused by optical color mixing between adjacent pixels, so the color gamut of the display device can be improved. In addition, generally, the closer the light-emitting layer and the lens are to each other, the more effectively extended to the light of a wider angle. The distance between the internal lens and the light-emitting layer is very short, so the design width of the light-emitting element and the design freedom of the light-emitting element can be increased. In addition, by appropriately selecting the thickness or material of the protective film, the distance between the internal lens and the light-emitting layer or the curvature of the internal lens can be changed, and the design width of the light-emitting element and the design freedom of the light-emitting element can be further increased. In addition, heat treatment is unnecessary for the formation of the internal lens, and therefore, no damage is caused in the organic layer.

[0201] exist Figure 1 In the example shown, when the recessed portion 27 is cut along a virtual plane including the axis AX of the recessed portion 27, the cross-sectional shape of the recessed portion 27 is a smooth curve. However, the cross-sectional shape may be as follows: Figure 4 A portion of the trapezoidal shape shown, or may be as Figure 5 The combination of the linear inclined surface 27B and the bottom 27C defining a smooth curve as shown. Since the cross-sectional shape of the recessed portion 27 is any one of these shapes, the inclination angle of the inclined surface 27B can be increased. Therefore, even in a shape in which the depth of the recessed portion 27 is small, the extraction of light emitted forward from the organic layer 33 and reflected on the first electrode layer 31 can be improved.

[0202] Second embodiment

[0203] The second embodiment is a modification of the first embodiment. In the first embodiment, the color filter layer CF R CF G and CF B On the other hand, in the light emitting element of the second embodiment, the planarizing layer 35 (35 R , 35 G , 35 B) has the function of acting as a color filter, such as Figure 6 The color filter layer CF can be omitted. R CF G and CF B The planarization layer 35 having the function of a color filter includes a well-known color resist material. Therefore, a structure for focusing and color separation can be provided. In addition, the planarization layer 35 used as a color filter and the organic layer 33 are close to each other, so even if the angle of light emitted from the light emitting element is wider, color mixing can be effectively prevented. Therefore, the viewing angle characteristics are improved. In addition to the above points, other configurations / structures of the light emitting element of the second embodiment may be similar to the configurations / structures of the light emitting element of the first embodiment, and therefore, a detailed description will be omitted.

[0204] Third embodiment

[0205] The third embodiment is also a modification of the first embodiment. Figure 7 , Figure 8 and Fig. 9 A schematic partial end view of a light emitting element of a third embodiment in a display device of a third embodiment is shown. Figure 7 shows a light emitting element located, for example, in a central part of a display device, Figure 8 shows a light emitting element located at, for example, one end portion of a display device, Fig. 9 The light emitting element is shown located at, for example, another end portion of the display device. Figure 7 , Figure 8 , Fig. 9 , Fig.10 , Fig.11 and Fig.12 In FIG. 1 , the contact hole (contact plug) 28 is not shown.

[0206] In the light-emitting element of the third embodiment, the first electrode layer 31 contacts a portion of the organic layer 33. Specifically, in this case, the size of the first electrode layer 31 may be configured to be smaller than the size of the organic layer 33, or the size of the first electrode layer 31 may be configured to be larger than the size of the organic layer 33. In the illustrated example, the size of the first electrode layer 31 is smaller than the size of the organic layer 33. In addition, the color filter layer CF is formed on the planarization layer 35, extending from the (central) axis AX (set at Figures 7 to 9The direction (orthogonal projection direction) toward the center point 38 (orthogonal projection center point) of the first electrode layer 31 in contact with the organic layer 33 and the direction (orthogonal projection direction) from the axis AX of the recessed portion 27 toward the center point 39 (orthogonal projection center point) of the color filter layer CF have a relationship of opposite directions. In other words, the orthogonal projection center point 38 of the first electrode layer 31 and the orthogonal projection center point 39 of the color filter layer CF are not arranged on the axis AX (in the vertical direction of the image plane of the image shown). Figure 8 and Fig. 9 39 of the color filter layer CF). In addition, as the position of the light-emitting element is closer to the peripheral portion of the display device, the distance (orthogonal projection distance) PL1 from the axis AX of the recessed portion 27 to the orthogonal projection center point 38 of the first electrode layer 31 contacting the organic layer 33 and the distance (orthogonal projection distance) PL2 from the axis AX of the recessed portion 27 to the orthogonal projection center point 39 of the color filter layer CF are greater. In addition, the intersection between the orthogonal projection center point 38 of the first electrode layer 31, the orthogonal projection center point of the organic layer 33, and the axis AX of the color filter layer CF and the virtual plane of the base are located on a substantially straight line 43. The center point is indicated by a cross mark. The above-mentioned form and the following form can be applied to the light-emitting element individually and separately. In other words, the closer the light emitting element is arranged to the periphery of the display device, the larger the angle α between the line 43 connecting the orthogonal projection center point 38 of the first electrode layer 31 and the orthogonal projection center point 39 of the color filter layer CF and the line 44 passing through the orthogonal projection center point 39 and parallel to the axis AX. Figure 7 In the embodiment, the light emitting element is arranged in the central area of ​​the display device so that the angle α is zero, and in Figure 8 and Fig. 9 In the embodiment, the light emitting element is arranged closer to the corresponding (opposite) peripheral portion so that the angle α is greater than zero, ie, the color filter layer CF and the recessed portion 27 are displaced (offset) relative to each other in a direction perpendicular to the axis AX.

[0207] Alternatively, in the light-emitting element of the third embodiment, the on-chip microlens 36 is disposed on or above the top surface of the planarization layer 35, the first electrode layer 31 contacts a portion of the organic layer 33, and the direction (orthogonal projection direction) from the axis AX of the recessed portion 27 toward the center point 38 (orthogonal projection center point) of the first electrode layer 31 contacting the organic layer 33 and the direction (orthogonal projection direction) from the axis AX of the recessed portion 27 toward the center point 45 (orthogonal projection center point) of the on-chip microlens 36 have a relationship of opposite directions. In other words, the orthogonal projection center point 38 of the first electrode layer 31 and the orthogonal projection center point 45 of the on-chip microlens 36 are not disposed on the axis AX (on the Figure 8 and Fig. 9 33 ), but is displaced (offset) in a direction perpendicular to the axis AX, wherein the orthogonal projection center point 38 of the first electrode layer 31 is set on the side of the axis AX opposite to the orthogonal projection center point 45 of the on-chip microlens 36. It can be configured so that the size of the first electrode layer 31 is smaller than the size of the organic layer 33, or it can be configured so that the size of the first electrode layer 31 is the same as the size of the organic layer 33, but the insulating material film 61 is formed at the portion between the first electrode layer 31 and the organic layer 33. Alternatively, it can be configured so that the size of the first electrode layer 31 is larger than the size of the organic layer 33. In addition, the on-chip microlens 36 is larger than the recessed portion 27. As the position of the light-emitting element is closer to the peripheral portion of the display device, the distance (orthogonal projection distance) PL1' from the axis AX of the recessed portion 27 to the center point (orthogonal projection center point) of the first electrode layer 31 and the distance (orthogonal projection distance) PL2' from the axis AX of the recessed portion 27 to the center point (orthogonal projection center point) of the on-chip microlens 36 are larger. The orthogonal projection center point of the first electrode layer 31, the orthogonal projection center point of the organic layer 33, and the orthogonal projection center point of the on-chip microlens 36 are on a substantially straight line. In other words, the closer the light-emitting element is arranged to the periphery of the display device, the larger the angle β between the line 43 connecting the orthogonal projection center point 38 of the first electrode layer 31 and the orthogonal projection center point 45 of the on-chip microlens 36 and the line 46 passing through the orthogonal projection center point 45 and parallel to the axis AX. Figure 7 In the embodiment, the light emitting element is arranged in the central area of ​​the display device so that the angle β is zero, and in Figure 8 and Fig. 9 , the light emitting element is disposed closer to the corresponding (opposite) peripheral portion so that the angle β is greater than zero, that is, the on-chip microlens 36 and the recessed portion 27 are shifted (offset) relative to each other in a direction perpendicular to the axis AX.

[0208] As described above, the light emission position in the recessed portion 27 is changed according to the position of the light emitting element at the display device, so that the optical axis OA of the light emitting element can be changed according to the position of the light emitting element at the display device. In addition, by this configuration, in the case of magnifying and displaying an image from the display device using an optical unit (not shown) such as a lens, the display device of the third embodiment is applied according to the setting angle between the light emitting element and the optical unit forming the display device, so that the brightness distribution through the optical unit can be improved and color mixing can be avoided.

[0209] like Fig.10 , Fig.11 and Fig.12As shown, the size of the first electrode layer 31 in the recess 27 is the same as that of the organic layer 33, but may be configured such that the insulating material film 61 is formed at a portion between the first electrode layer 31 and the organic layer 33. The insulating material film 61 may be formed by an extended portion of the insulating layer 29.

[0210] The present disclosure has been described above based on the preferred embodiments, but is not limited to these embodiments. The configuration / structure of the display device (organic EL display device) and the light emitting element (organic EL element) described in the embodiments has been described as an example, and can be changed as needed. The method for manufacturing the display device has also been described as an example, and can be changed as needed. For example, the organic layer 33 can be formed only at the bottom of the recessed portion 27, such as Fig.13 , as a schematic partial end view of a variation of the light emitting element of the first embodiment. In some cases, a protective film is not necessarily provided. In addition, in this case, the organic layer 33 and the planarization layer 35 or the second electrode layer 32 and the planarization layer 35 can form an internal lens.

[0211] In an embodiment, this is configured so that a single pixel is formed by three sub-pixels through a combination of a white light emitting element and a color filter layer, but this can be configured so that, for example, a single pixel is formed by four sub-pixels including a light emitting element configured to emit white light. Alternatively, this can be configured so that the light emitting element includes a red light emitting element configured to emit red light through an organic layer, a green light emitting element configured to emit green light through an organic layer, and a blue light emitting element configured to emit blue light through an organic layer, and the three types of light emitting elements (sub-pixels) are combined to form a single pixel. In an embodiment, the light emitting element driving unit includes a MOSFET, but may include a TFT. The first electrode layer or the second electrode layer may have a single-layer structure or a multi-layer structure.

[0212] In order to prevent optical crosstalk from occurring due to light emitted from a certain light-emitting element entering a light-emitting element adjacent to the light-emitting element, a light-shielding layer may be provided between the light-emitting element and the light-emitting element. That is, a groove portion may be formed between the light-emitting element and the light-emitting element, and may be filled with a light-shielding material to form a light-shielding layer. With such a light-shielding layer, the percentage of light emitted from a certain light-emitting element entering an adjacent light-emitting element may be reduced, and the phenomenon that the chromaticity of the entire pixel deviates from the desired chromaticity due to, for example, color mixing may be reduced. In addition, since color mixing may be prevented, the color purity when monochromatic light is emitted from the pixel may be increased, and the chromaticity point becomes deeper. Therefore, the color gamut becomes wider, and the color expression range of the display device becomes wider. In addition, a color filter layer is provided for each pixel to increase the color purity. However, depending on the configuration of the light-emitting element, the thickness of the color filter layer may be reduced, or the color filter layer may be omitted. In addition, light absorbed by the color filter layer may be extracted. As a result, the luminous efficiency is improved. Optionally, a light-shielding property may be provided to the black matrix layer BM.

[0213] The display device according to the embodiment of the present disclosure is suitable for a single-lens reflex digital camera with an interchangeable lens. Fig.19A shows a front view of a digital camera, Fig.19B A rear view is shown. This single-lens reflex digital camera with interchangeable lenses has, for example, an interchangeable photographic lens unit (interchangeable lens) 212 on the right side of a camera main body (camera body) 211 as viewed from the front, and has a grip 213 for the photographer to grip on the left side as viewed from the front. In addition, a monitor 214 is provided at approximately the center of the back side of the camera main body 211. An electronic viewfinder (eyepiece window) 215 is provided above the monitor 214. The photographer observes the electronic viewfinder 215 so that the optical image of the object guided from the photographic lens unit 212 can be seen, and the composition can be determined. In a single-lens reflex digital camera with interchangeable lenses having such a configuration, the display device of an embodiment of the present disclosure can be used as the electronic viewfinder 215.

[0214] Optionally, the display device of the embodiment of the present disclosure is applicable to a head-mounted display. Fig. 20As shown in the external view of , the head-mounted display 300 is a transmissive head-mounted display having a main body 301, an arm 302, and a lens barrel 303. The main body 301 is connected to the arm 302 and the glasses 310. Specifically, the end of the main body 301 in the long side direction is connected to the arm 302. In addition, one side of the side surface of the main body 301 is coupled to the glasses 310 via a connecting element (not shown). Note that the main body 301 can be directly connected to the head of a person. The main body 301 includes a built-in control board configured to control the operation of the head-mounted display 300 and the built-in display. The arm 302 couples the main body 301 and the lens barrel 303 to support the lens barrel 303 on the main body 301. Specifically, the arm 302 engages the end of the main body 301 and the end of the lens barrel 303, and in this way, the lens barrel 303 is fixed to the main body 301. Furthermore, the arm portion 302 includes a built-in signal line for transmitting data on an image provided from the main body portion 301 to the lens barrel 303. The lens barrel 303 projects image light, which is provided from the main body portion 301 through the arm portion 302, toward the eyes of the user wearing the head-mounted display 300 through the lenses 311 of the glasses 310. In the head-mounted display 300 having the above-described configuration, the display device of the embodiment of the present disclosure can be used as a display built into the main body portion 301.

[0215] Although an on-chip microlens is provided in the above-described exemplary embodiment, in other embodiments of the light emitting element according to the present disclosure, such an on-chip microlens may not be provided.

[0216] In addition, the above exemplary embodiments are configured to emit light from the second substrate top emission (top surface emission) display device (top surface emission display device). However, the present disclosure is not limited to these embodiments, but can also be configured as a bottom emission (bottom surface emission) display device.

[0217] Fig.21Schematic partial end view of a portion of a light-emitting element 400 of a bottom-emitting embodiment. On a TFT substrate (e.g., made of glass) formed by a second substrate 41 and a sealing resin layer 37, a color filter CF (e.g., OCCF) and a black matrix layer BM covered by a protective film 34 (e.g., SiO with a refractive index of 1.50) are formed, for example, by using a CVD method. In the protective film 34, a groove is etched, and a planarization layer 35 is deposited on the protective film 34. The planarization layer 35 is formed like a lens, and a second electrode layer 32, an organic layer 33, and a first electrode layer 31 are formed on the planarization layer. In addition, in order to define the light-emitting element, an insulating layer 29 is formed on top of the protective film 34. Unlike the light-emitting element 10 described above of the top surface emission embodiment, the light-emitting element 400 of the bottom surface emission embodiment does not include a base 26 formed with a recessed portion 27, but rather forms a dome-shaped structure 401 (including a lens-shaped planarization layer 35, a second electrode layer 32, an organic layer 33 and a first electrode layer 31) by subsequently forming various layers on top of each other on a substrate (a second substrate 41 and a sealing resin layer 37), a color filter CF and a black matrix layer BM.

[0218] Fig. 22 yes Fig.21 Schematic diagram of light trajectories in a partial end view of a portion of a light emitting element of a bottom emitting embodiment as shown. Fig. 22 As shown, a portion of the light emitted from the organic layer 33 passes through the second electrode layer 32 to enter the planarization layer 35, and a portion of the light emitted from the organic layer 33 is reflected on the first electrode layer 31 to enter the planarization layer 35 through the second electrode layer 32. As described above, the protective film 34 and the planarization layer 35 may form an internal lens, and therefore, the light emitted from the organic layer 33 may be collected in a direction toward the center side of the light emitting element.

[0219] Note that the present disclosure can adopt the following configurations.

[0220] [A01] <<Light Emitting Component>>

[0221] A light emitting element, comprising at least:

[0222] Pedestal;

[0223] A recessed portion, which is disposed on the surface of the base;

[0224] a first electrode layer formed at least partially along the shape of the top surface of the recessed portion;

[0225] an organic layer formed on the first electrode layer at least partially along a shape of a top surface of the first electrode layer;

[0226] a second electrode layer formed on the organic layer along a shape of a top surface of the organic layer; and

[0227] a planarization layer formed on the second electrode layer,

[0228] Here, light from the organic layer is emitted to the outside via the second electrode layer and the planarization layer.

[0229] [A02] The light-emitting element according to [A01], wherein the protective film is formed between the second electrode layer and the planarization layer.

[0230] [A03] The light-emitting element according to [A02], wherein the protective film is formed along the shape of the top surface of the second electrode layer.

[0231] [A04] The light-emitting element according to [A02] or [A03], wherein n1>n2 is satisfied, wherein the refractive index of the material forming the planarization layer is n1, and the refractive index of the material forming the protective film is n2.

[0232] [A05] The light-emitting element according to [A04], wherein (n1-n2) satisfies 0.1 to 0.6.

[0233] [A06] The light-emitting element according to [A01], wherein

[0234] In |θ r When |≠0, it satisfies

[0235] |θ i |>|θ r |,

[0236] Here, the incident angle of light emitted from the organic layer and entering the planarizing layer through the second electrode layer is θi, and the refraction angle of light having entered the planarizing layer is θr.

[0237] [A07] The light-emitting element according to any one of [A01] to [A06], wherein the planarization layer has a function of a color filter.

[0238] [A08] The light-emitting element according to any one of [A01] to [A07], wherein the on-chip microlens is provided on or above the top surface of the planarization layer.

[0239] [A09] The light-emitting element according to any one of [A01] to [A08], wherein the first electrode layer contacts a portion of the organic layer.

[0240] [A10] The light-emitting element according to [A09], wherein a size of the first electrode layer is smaller than a size of the organic layer.

[0241] [A11] The light-emitting element according to [A09], wherein a size of the first electrode layer is larger than a size of the organic layer.

[0242] [A12] The light-emitting element according to [A09], wherein the first electrode layer has the same size as that of the organic layer, and the insulating material film is formed at a portion between the first electrode layer and the organic layer.

[0243] [A13] The light-emitting element according to any one of [A09] to [A12], wherein

[0244] forming a color filter layer on the planarization layer, and

[0245] A direction from the axis of the depressed portion toward a center point of the first electrode layer contacting the organic layer and a direction from the axis of the depressed portion toward a center point of the color filter layer have a relationship of opposite directions.

[0246] [A14] A light-emitting element according to [A13], wherein the distance from the axis of the recessed portion toward the center point of the first electrode layer contacting the organic layer and the distance from the axis of the recessed portion toward the center point of the color filter layer are greater as the position of the light-emitting element is closer to the periphery of the display device.

[0247] [A15] The light-emitting element according to [A13] or [A14], wherein the center point of the first electrode layer, the center point of the organic layer, and the axis of the recessed portion are located on a straight line.

[0248] [A16] The light-emitting element according to any one of [A09] to [A15], wherein

[0249] The on-chip microlens is disposed on or above the top surface of the planarization layer,

[0250] The first electrode layer contacts a portion of the organic layer, and

[0251] A direction from the axis of the depressed portion toward the center point of the first electrode layer in contact with the organic layer and a direction from the axis of the depressed portion toward the center point of the on-chip microlens have a relationship of opposite directions.

[0252] [A17] The light-emitting element according to [A16], wherein the on-chip microlens is larger than the recessed portion.

[0253] [A18] A light-emitting element according to [A16] or [A17], wherein the distance from the axis of the recessed portion toward the center point of the first electrode layer and the distance from the axis of the recessed portion toward the center point of the on-chip microlens are greater as the position of the light-emitting element is closer to the periphery of the display device.

[0254] [A19] The light-emitting element according to any one of [A16] to [A18], wherein the center point of the first electrode layer, the center point of the organic layer, and the center point of the on-chip microlens are located on a straight line.

[0255] [A20] The light-emitting element according to any one of [A01] to [A19], wherein when the depressed portion is cut along a virtual plane including an axis of the depressed portion, a cross-sectional shape of the depressed portion is a smooth curve.

[0256] [A21] The light-emitting element according to any one of [A01] to [A19], wherein when the recessed portion is cut along a virtual plane including an axis of the recessed portion, a cross-sectional shape of the recessed portion is a portion of a trapezoidal shape.

[0257] [A22] A light-emitting element according to any one of [A01] to [A19], wherein when the recessed portion is cut with a virtual plane including the axis of the recessed portion, a cross-sectional shape of the recessed portion is a combination of a linear inclined surface and a bottom defining a smooth curve.

[0258] [A23] The light-emitting element according to any one of [A01] to [A22], wherein when the recessed portion is cut with a virtual plane including the axis of the recessed portion, a cross-sectional shape from an edge of the recessed portion to a surface of the base includes a smooth curve.

[0259] [A24] The light-emitting element according to any one of [A01] to [A23], wherein the shape of the edge portion of the recessed portion is circular or elliptical.

[0260] [A25] The light-emitting element according to any one of [A01] to [A24], wherein

[0261] satisfy

[0262] 1 / 4≤Dp / R≤1 / 2

[0263] Here, when the recessed portion is orthogonally projected on a virtual plane including the surface of the base, it is assumed that the diameter of a circle having an area equal to the shape of the orthogonal projection image of the recessed portion is R, and the depth of the recessed portion is Dp.

[0264] [A26] The light-emitting element according to any one of [A01] to [A25], wherein the organic layer emits white light.

[0265] [A27] The light-emitting element according to [A26], wherein the organic layer has a multilayer structure of a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.

[0266] [A28] The light-emitting element according to [A27], wherein the organic layer has a resonator structure.

[0267] [B01]<<Display device>>

[0268] A display device, comprising:

[0269] a first substrate and a second substrate; and

[0270] A plurality of light emitting elements are located between the first substrate and the second substrate, are disposed on a base formed on the first substrate, and are arranged in a two-dimensional manner.

[0271] Each light emitting element at least comprises

[0272] A recessed portion is provided on the surface of the base,

[0273] a first electrode layer formed at least partially along the shape of the top surface of the recessed portion,

[0274] an organic layer formed on the first electrode layer at least partially along a shape of a top surface of the first electrode layer,

[0275] a second electrode layer formed on the organic layer along the shape of the top surface of the organic layer, and

[0276] a planarization layer formed on the second electrode layer, and

[0277] Light from the organic layer is emitted to the outside via the second electrode layer, the planarization layer, and the second substrate.

[0278] [B02]<<Display device>>

[0279] A display device comprising

[0280] a first substrate and a second substrate, and

[0281] A plurality of light emitting elements are located between the first substrate and the second substrate, are disposed on a base formed on the first substrate, and are arranged in a two-dimensional manner,

[0282] Each light-emitting element includes a light-emitting element according to any one of [A01] to [A28].

[0283] It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alterations may be made according to design requirements and other factors within the scope of the appended claims or the equivalents thereof.

[0284] Reference Signs List 10, 10R, 10G, 10B light emitting element (top emission) 11 first substrate

[0285] 20 transistors

[0286] 21 Gate electrode

[0287] 22Gate insulation layer

[0288] 23Channel formation region

[0289] 24 Source / Drain Region

[0290] 25 Component isolation region 26 Base (interlayer insulation layer)

[0291] Surface of 26A base

[0292] 27 Depression

[0293] 27A Edge of the recessed portion

[0294] 27B Linearly inclined surface of the recessed portion

[0295] 27C defines the bottom of the concave portion of the smooth curve

[0296] 28 contact plug

[0297] 29 Insulation layer

[0298] 31 first electrode layer

[0299] 32 second electrode layer

[0300] 33 Organic layer

[0301] 34 Protective film

[0302] 35(35 R , 35 G , 35 B ) Planarization layer

[0303] 36 on-chip microlenses

[0304] 37 Sealing resin layer

[0305] 41 Second substrate

[0306] 51 mask layer

[0307] 52, 53, 54 resist layer

[0308] 55 Open

[0309] 61 Insulation material film

[0310] 400 light emitting elements (bottom emission)

[0311] 401 dome-shaped structure

[0312] CF R CF G CFB Color filter layer

[0313] BM black matrix layer.

Claims

1. A light-emitting element, comprising at least: dome-shaped part; a first electrode layer formed at least partially along the shape of the top surface of the dome-shaped portion; an organic layer formed on the first electrode layer at least partially along a shape of a top surface of the first electrode layer; a second electrode layer formed on the organic layer along the shape of the top surface of the organic layer; as well as a planarization layer formed on the second electrode layer, wherein light from the organic layer is emitted to the outside via the second electrode layer and the planarization layer; wherein the first electrode layer contacts a portion of the organic layer, a color filter layer is formed on the planarization layer or on the protective film, and A direction from the axis of the dome-shaped portion toward a center point of the first electrode layer contacting the organic layer and a direction from the axis of the dome-shaped portion toward a center point of the color filter layer have a relationship of opposite directions.

2. The light-emitting element according to claim 1, wherein A protective film is formed between the second electrode layer and the planarization layer or on a surface of the planarization layer that is away from the organic layer.

3. The light-emitting element according to claim 2, wherein n1>n2 is satisfied, wherein the refractive index of the material forming the planarization layer is n1, and the refractive index of the material forming the protection film is n2.

4. The light-emitting element according to claim 1, wherein In |θ r When |≠0, it satisfies |θ i |>|θ r |, The incident angle of light emitted from the organic layer and entering the planarization layer through the second electrode layer is θ i , and the refraction angle of the light that has entered the planarization layer is θ r .

5. The light emitting element according to claim 1, wherein The planarization layer has a function of a color filter.

6. The light-emitting element according to claim 1, wherein An on-chip microlens is disposed on or above a top surface of the planarization layer.

7. The light-emitting element according to claim 1, wherein An on-chip microlens is disposed on or above the top surface of the planarization layer, The first electrode layer contacts a portion of the organic layer, and A direction from the axis of the dome-shaped portion toward a center point of the first electrode layer contacting the organic layer and a direction from the axis of the dome-shaped portion toward a center point of the on-chip microlens have a relationship of opposite directions.

8. The light-emitting element according to claim 7, wherein The on-chip microlens is larger than the dome-shaped portion.

9. The light-emitting element according to claim 1, wherein When the dome-shaped portion is cut by a virtual plane including the axis of the dome-shaped portion, the cross-sectional shape of the dome-shaped portion is a smooth curve.

10. The light emitting element according to claim 1, wherein When the dome-shaped portion is cut by a virtual plane including the axis of the dome-shaped portion, the cross-sectional shape of the dome-shaped portion is a portion of a trapezoidal shape.

11. The light emitting element according to claim 1, wherein When the dome-shaped portion is cut by a virtual plane including the axis of the dome-shaped portion, the cross-sectional shape of the dome-shaped portion is a combination of a linear inclined surface and a bottom defining a smooth curve.

12. The light emitting element according to claim 1, wherein The shape of the edge portion of the dome-shaped portion is circular or elliptical.

13. The light emitting element according to claim 1, wherein The organic layer emits white light.

14. The light emitting element according to claim 13, wherein The organic layer has a multi-layer structure of a red light emitting layer, a green light emitting layer, and a blue light emitting layer.

15. A display device, comprising: a first substrate and a second substrate; as well as A plurality of light emitting elements according to claim 1 are located between the first substrate and the second substrate and are arranged in a two-dimensional manner.

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