Light Emitting Diode and its Fabrication Method

Abstract

This disclosure provides a light-emitting diode (LED) and its fabrication method. The LED includes an epitaxial structure, a silver mirror structure, an insulating structure, a first electrode, and a second electrode. The first and second electrodes each comprise a first contact layer, a first reflective layer, a coating layer, a second reflective layer, a first adhesion layer, a reflective layer protective layer, a second adhesion layer, an electrode protective layer, and a second contact layer, stacked sequentially. The reflective layer protective layer protects the first and second reflective layers, preventing reactions between the reactive reflective metals in the first and second reflective layers and metals such as Au in the pads. Furthermore, because the melting point of the reflective layer protective layer is higher than that of the first and second reflective layers, the LED will not melt even at high temperatures during operation, resulting in more stable protection. This avoids short circuits caused by insulation structure breakage and improves LED yield.

Description

Technical Field

[0001] This disclosure relates to the field of light-emitting devices, and in particular to a light-emitting diode and a method for fabricating the same. Background Technology

[0002] Light-emitting diodes (LEDs) are semiconductor devices that emit light. They have advantages such as energy saving, high brightness, high durability, long life and light weight, and have been widely used in lighting and display fields.

[0003] The related technology provides a light-emitting diode, the structure of which includes an epitaxial structure, a silver mirror structure, an insulating structure, and an electrode structure.

[0004] In the manufacturing process of light-emitting diodes, the insulating layer between the electrode structures is prone to cracking, causing short circuits and electrode failure, which reduces the yield of LEDs. Summary of the Invention

[0005] This disclosure provides a light-emitting diode and its fabrication method, which enables a more stable electrode structure, avoids short circuits caused by insulation layer breakage, and improves LED yield. The technical solution is as follows:

[0006] On the one hand, a light-emitting diode is provided, the light-emitting diode comprising: an epitaxial structure, a silver mirror structure, an insulating structure, a first electrode, and a second electrode;

[0007] The epitaxial structure has a stepped structure, and the silver mirror structure is located on the surface of the epitaxial structure; the first electrode is located on the surface of the silver mirror structure, and the second electrode is connected to the stepped surface of the stepped structure; the insulating structure covers the stepped structure, the silver mirror structure, the first electrode, and the second electrode;

[0008] The first electrode and the second electrode each include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a reflective protective layer, a second adhesive layer, an electrode protective layer, and a second contact layer, which are stacked sequentially. The melting point of the material of the reflective protective layer is higher than that of the material of the first reflective layer, and the melting point of the material of the reflective protective layer is higher than that of the material of the second reflective layer.

[0009] Optionally, the first contact layer is a Cr layer, the first reflective layer is an Al layer, the encapsulation layer includes a Ti sublayer and an AlCu alloy sublayer with an Al content of 10% stacked sequentially, the second reflective layer is an Al layer, the first adhesion layer is a Cr layer, the reflective layer protective layer is a Ni layer, the second adhesion layer is a Cr layer, the electrode protective layer is a Pt layer, and the second contact layer is a Ti layer.

[0010] Optionally, the thickness of the first contact layer is 40–60 angstroms, the thickness of the first reflective layer is 2500–3500 angstroms, the thickness of the Ti sublayer in the encapsulation layer is 400–600 angstroms, the thickness of the AlCu alloy sublayer is 1500–2500 angstroms, the thickness of the second reflective layer is 1500–2500 angstroms, the thickness of the first adhesion layer is 100–200 angstroms, the thickness of the reflective protective layer is 2000–3000 angstroms, the thickness of the second adhesion layer is 100–200 angstroms, the thickness of the electrode protective layer is 1500–2500 angstroms, and the thickness of the second contact layer is 400–600 angstroms.

[0011] Optionally, the insulating structure includes a first insulating layer and a second insulating layer; the first insulating layer covers the silver mirror structure and the stepped structure, the first electrode passes through the first insulating layer and is connected to the silver mirror structure, and the second electrode passes through the first insulating layer and is connected to the stepped structure; the second insulating layer covers the first electrode, the second electrode, and the first insulating layer.

[0012] The light-emitting diode further includes: a first electrode pad and a second electrode pad, wherein the first electrode pad passes through the second insulating layer and is connected to the first electrode, and the second electrode pad passes through the second insulating layer and is connected to the second electrode;

[0013] The first electrode pad and the second electrode pad include an electrode pad contact layer, an electrode pad protective layer and an electrode pad soldering layer stacked in sequence.

[0014] Optionally, the first insulating layer and the second insulating layer are silicon dioxide layers, the electrode pad contact layer is a Ti layer, the electrode pad protective layer is a Ni layer, and the electrode pad welding layer is an AuSn layer.

[0015] Optionally, the thickness of the electrode pad contact layer is 100-200 angstroms, the thickness of the electrode pad protective layer is 2000-3000 angstroms, and the thickness of the electrode pad welding layer is 25000-35000 angstroms.

[0016] On the other hand, a method for fabricating a light-emitting diode includes:

[0017] Fabrication of epitaxial structures;

[0018] The extensional structure is graphically processed to form a stepped structure;

[0019] A silver mirror structure is formed on the surface of the epitaxial structure, and the silver mirror structure is located on the surface of the epitaxial structure.

[0020] An insulating structure, a first electrode, and a second electrode are fabricated. The first electrode is located on the surface of the silver mirror structure, and the second electrode is connected to the stepped surface of the stepped structure. The insulating structure covers the stepped structure, the silver mirror structure, the first electrode, and the second electrode. The first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a reflective protective layer, a second adhesive layer, an electrode protective layer, and a second contact layer, which are stacked sequentially. The melting point of the material of the reflective protective layer is higher than that of the material of the first reflective layer, and the melting point of the material of the reflective protective layer is higher than that of the material of the second reflective layer.

[0021] Optionally, the first contact layer is a Cr layer, the first reflective layer is an Al layer, the encapsulation layer includes a Ti sublayer and an AlCu alloy sublayer with an Al content of 10% stacked sequentially, the second reflective layer is an Al layer, the first adhesion layer is a Cr layer, the reflective layer protective layer is a Ni layer, the second adhesion layer is a Cr layer, the electrode protective layer is a Pt layer, and the second contact layer is a Ti layer.

[0022] Optionally, the thickness of the first contact layer is 40–60 angstroms, the thickness of the first reflective layer is 2500–3500 angstroms, the thickness of the Ti sublayer in the encapsulation layer is 400–600 angstroms, the thickness of the AlCu alloy sublayer is 1500–2500 angstroms, the thickness of the second reflective layer is 1500–2500 angstroms, the thickness of the first adhesion layer is 100–200 angstroms, the thickness of the reflective protective layer is 2000–3000 angstroms, the thickness of the second adhesion layer is 100–200 angstroms, the thickness of the electrode protective layer is 1500–2500 angstroms, and the thickness of the second contact layer is 400–600 angstroms.

[0023] Optionally, the evaporation rate of the first contact layer is 0.3–0.5 Å / s, the evaporation rate of the first reflective layer is 2–4 Å / s, the evaporation rate of the Ti sublayer in the encapsulation layer is 1–3 Å / s, the evaporation rate of the AlCu alloy sublayer is 4–6 Å / s, the evaporation rate of the second reflective layer is 5–7 Å / s, the evaporation rate of the first adhesion layer is 0.1–0.3 Å / s, the evaporation rate of the reflective protective layer is 4–6 Å / s, the evaporation rate of the second adhesion layer is 0.1–0.3 Å / s, the evaporation rate of the electrode protective layer is 1–3 Å / s, and the evaporation rate of the second contact layer is 1–3 Å / s.

[0024] The beneficial effects of the technical solutions provided in this disclosure are:

[0025] In this embodiment, the electrode comprises a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a reflective layer protective layer, a second adhesive layer, an electrode protective layer, and a second contact layer, stacked sequentially. The first contact layer is used for ohmic contact between the electrode and the epitaxial structure; the second contact layer is used for contact with the pads; the first and second reflective layers increase light reflection; the wrapping layer covers and protects the first contact layer and the first reflective layer; the first and second adhesive layers allow for tighter adhesion between the layers in the electrode structure; and the electrode protective layer protects each layer in the electrode. The reflective layer protective layer protects the first and second reflective layers, preventing the reactive reflective metals in the first and second reflective layers from reacting with metals such as Au in the pads. Furthermore, because the melting point of the reflective layer protective layer is higher than that of the first and second reflective layers, the LED will not melt even at high temperatures during operation, resulting in more stable protection performance. This prevents the Au in the pads from alloying with the reflective metal, which could cause insulation structure breakage and short circuits, thus improving LED yield. Furthermore, the aforementioned electrode structure ensures the electrical performance of the electrodes and pads, thereby improving LED performance. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure;

[0028] Figure 2 This is a schematic diagram of the structure of an electrode and electrode pad provided in an embodiment of this disclosure;

[0029] Figure 3 This is a flowchart of a method for fabricating a light-emitting diode provided in an embodiment of this disclosure;

[0030] Figure 4 This is a flowchart of another method for fabricating a light-emitting diode provided in this embodiment.

[0031] The attached figures are labeled as follows:

[0032] 10: Epitaxial structure; 20: Silver mirror structure; 30: Insulating structure;

[0033] 101: Substrate; 102: First semiconductor layer; 103: Active layer; 104: Second semiconductor layer; 105: Transparent conductive layer; 106: Silver mirror reflective layer; 107: Silver mirror protective layer; 108: First electrode; 109: First electrode pad; 110: Second electrode; 111: Second electrode pad; 112: First insulating layer; 113: Second insulating layer; 115: Isolation trench; 116: Stepped structure;

[0034] 201: First contact layer; 202: First reflective layer; 203: Encapsulation layer; 204: Second reflective layer; 205: First adhesion layer; 206: Reflective layer protective layer; 207: Second adhesion layer; 208: Electrode protective layer; 209: Second contact layer; 210: Electrode pad contact layer; 211: Electrode pad protective layer; 212: Electrode pad soldering layer;

[0035] 301: Through-hole in the first insulating layer; 302: Through-hole in the second insulating layer. Detailed Implementation

[0036] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0037] Figure 1 This is a schematic diagram of the structure of a light-emitting diode provided in an embodiment of this disclosure. See also... Figure 1 The light-emitting diode includes: an epitaxial structure 10, a silver mirror structure 20, an insulating structure 30, a first electrode 108, and a second electrode 110.

[0038] The epitaxial structure 10 has a stepped structure 116, and the silver mirror structure 20 is located on the surface of the epitaxial structure 10; the first electrode 108 is located on the surface of the silver mirror structure 20, and the second electrode 110 is connected to the stepped surface of the stepped structure 116; the insulating structure 30 covers the stepped structure 116, the silver mirror structure 20, the first electrode 108, and the second electrode 110.

[0039] Figure 2 This is a schematic diagram of an electrode structure provided in an embodiment of this disclosure. For example... Figure 2 As shown, the first electrode 108 and the second electrode 110 include a first contact layer 201, a first reflective layer 202, a wrapping layer 203, a second reflective layer 204, a first adhesion layer 205, a reflective protective layer 206, a second adhesion layer 207, an electrode protective layer 208, and a second contact layer 209, which are stacked in sequence. The melting point of the material of the reflective protective layer 206 is higher than that of the material of the first reflective layer 202, and the melting point of the material of the reflective protective layer 206 is higher than that of the material of the second reflective layer 204.

[0040] In this embodiment, the first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a second adhesive layer, an electrode protective layer, and a second contact layer stacked sequentially. The first contact layer is used for ohmic contact between the electrode and the epitaxial structure; the second contact layer is used for contact with the pads; the first and second reflective layers increase light reflection; the wrapping layer covers and protects the first contact layer and the first reflective layer; the first and second adhesive layers allow for tighter adhesion between the layers in the electrode structure; and the electrode protective layer protects the layers in the electrode. The reflective protective layer protects the first and second reflective layers, preventing the reactive reflective metals in the first and second reflective layers from reacting with metals such as Au in the pads. Because the melting point of the reflective protective layer is higher than that of the first and second reflective layers, the LED will not melt even at high temperatures during operation, resulting in more stable protection performance. This prevents the Au in the pads from alloying with the reflective metal, which could cause insulation structure breakage and short circuits, thus improving LED yield. Furthermore, the aforementioned electrode structure ensures the electrical performance of the electrodes and pads, thereby improving LED performance.

[0041] Optionally, the light-emitting diode also includes a substrate 101, on which the epitaxial structure 10 is located.

[0042] Optionally, the extensional structure 10 also has an isolation groove (ISO) 115, and the first insulating layer 112 also covers the isolation groove 115.

[0043] In this embodiment, the first contact layer 201, the first reflective layer 202, the encapsulation layer 203, the second reflective layer 204, the first adhesion layer 205, the reflective layer protection layer 206, the second adhesion layer 207, the electrode protection layer 208, and the second contact layer 209 can be fabricated using a vapor deposition process.

[0044] In this embodiment, the first contact layer 201 can be a Cr layer. Cr has good electrical conductivity and can be used for ohmic contacts between the electrode and the epitaxial structure.

[0045] In this embodiment, the thickness of the first contact layer 201 can be 40–60 angstroms, and the evaporation rate can be 0.1–0.5 angstroms / s. Using the above-mentioned thickness of the first contact layer ensures conductivity while avoiding excessive thickness that could affect the overall LED thickness; using the above-mentioned evaporation rate allows for more uniform deposition of the first contact layer while maintaining evaporation efficiency.

[0046] For example, the thickness of the first contact layer 201 can be 50 angstroms, and the evaporation rate can be 0.2 angstroms / s.

[0047] In this embodiment, the first reflective layer 202 can be an Al layer. Al has good reflectivity and conductivity, which improves light reflectivity while ensuring the electrical performance of the electrodes.

[0048] In this embodiment, the thickness of the first reflective layer 202 can be 2900–3100 angstroms, and the evaporation rate can be 2–4 angstroms / s. Using the above-mentioned thickness of the first reflective layer ensures reflectivity while avoiding excessive thickness that could affect the overall LED thickness; using the above-mentioned evaporation rate allows for more uniform deposition of the first reflective layer while maintaining evaporation efficiency.

[0049] For example, the first reflective layer 202 can be grown to a thickness of 3000 angstroms and the deposition rate can be 3 angstroms / s.

[0050] In this embodiment of the disclosure, the coating layer 203 may include a Ti sublayer and an AlCu alloy sublayer with an Al content of 10% stacked sequentially. Ti has good adhesion, which can enhance adhesion, and the AlCu alloy with an Al content of 10% makes the evaporation process more stable, does not produce metal particles, avoids the cracking of the upper film layer, and improves the LED yield.

[0051] In the embodiments disclosed herein, the thickness of the Ti sublayer can be 400–600 angstroms, and the evaporation rate can be 1–3 angstroms / s. Using a Ti sublayer of the aforementioned thickness ensures adhesion while avoiding excessive thickness that could affect the overall LED thickness; using the aforementioned evaporation rate allows for more uniform deposition of the Ti sublayer while maintaining evaporation efficiency.

[0052] In this embodiment, the thickness of the AlCu alloy sublayer can be 1900–2100 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using the above-mentioned thickness of the AlCu alloy sublayer ensures good thermal conductivity, aiding in heat dissipation while avoiding excessive thickness that could affect the overall LED thickness. Using the above-mentioned evaporation rate allows for more uniform deposition of the AlCu alloy sublayer while maintaining evaporation efficiency.

[0053] For example, the thickness of the Ti sublayer can be 500 angstroms, and the evaporation rate can be 2 angstroms / s. The thickness of the AlCu alloy sublayer can be 2000 angstroms, and the evaporation rate can be 5 angstroms / s.

[0054] In this embodiment of the disclosure, the second reflective layer 204 can be an Al layer, which has good reflectivity and can improve the reflectivity of light.

[0055] In this embodiment, the thickness of the second reflective layer 204 can be 1900–2100 angstroms, and the deposition rate can be 5–7 angstroms / s. Using the above-mentioned thickness of the second reflective layer ensures high reflectivity while avoiding excessive thickness that could affect the overall LED thickness; the deposition rate of the second reflective layer allows for more uniform deposition while maintaining deposition efficiency.

[0056] For example, the second reflective layer 204 can be 2000 angstroms, and the evaporation rate can be 6 angstroms / s.

[0057] In this embodiment of the disclosure, the first adhesive layer 205 can be a Cr layer, which has good adhesion and reduces the risk of delamination and peeling.

[0058] In this embodiment, the thickness of the first adhesion layer 205 can be 100–200 angstroms, and the evaporation rate can be 0.1–0.3 angstroms / s. Using the above-mentioned thickness of the first adhesion layer ensures adhesion without making the electrode too thick; using the above-mentioned evaporation rate allows for more uniform deposition of the first adhesion layer while maintaining evaporation efficiency.

[0059] For example, the first adhesion layer 205 can be 150 angstroms, and the evaporation rate can be 0.2 angstroms / s.

[0060] In this embodiment, the reflective protective layer 206 can be a Ni layer. Ni has a higher melting point than Al and is less reactive, thus protecting the reflective layer.

[0061] In this embodiment, the thickness of the reflective protective layer 206 can be 2400–2600 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using a reflective protective layer of this thickness ensures improved wear resistance of the overall electrode structure while avoiding excessive thickness that could affect the overall LED thickness. Furthermore, using the aforementioned evaporation rate allows for more precise thickness control, better film quality, and higher fabrication efficiency.

[0062] For example, the reflective protective layer 206 can be 2500 angstroms, and the evaporation rate can be 5 angstroms / s.

[0063] In this implementation, the Ni layer is used as a reflective protective layer. Because the Ni layer has a high melting point, it can effectively prevent Au in the electrode pads from directly contacting Al in the electrodes, thus avoiding the formation of the Kirkendall effect (i.e., voids will form in the electrode pads), which would cause the electrode to expand and the insulation layer between the electrodes to break. This avoids short circuits that could lead to electrode failure and improves the LED yield.

[0064] In this embodiment of the disclosure, the second adhesive layer 207 may be a Cr layer. The Cr layer has good adhesion, which can improve the adhesion between the sub-layers and help prevent delamination and peeling.

[0065] In this embodiment, the thickness of the second adhesion layer 207 can be 100–200 angstroms, and the evaporation rate can be 0.1–0.3 angstroms / s. Using the above-mentioned thickness of the second adhesion layer reduces material usage without sacrificing adhesion, achieving cost-effectiveness. Using the above-mentioned evaporation rate to fabricate the second adhesion layer allows for more uniform deposition of the second adhesion layer while ensuring evaporation efficiency.

[0066] For example, the second adhesion layer 207 can be 150 angstroms and the evaporation rate can be 0.2 angstroms / s.

[0067] In this embodiment of the disclosure, the electrode protective layer 208 can be a Pt layer. Pt is a very corrosion-resistant metal that can protect the underlying material from the effects of a corrosive environment.

[0068] In this embodiment, the electrode protective layer 208 can have a thickness of 1900–2100 angstroms and a deposition rate of 1–3 angstroms / s. Using an electrode protective layer of this thickness optimizes its physical properties such as corrosion resistance, electrical conductivity, and thermal conductivity while avoiding excessive thickness that could affect the overall LED thickness. The electrode protective layer fabricated using the aforementioned deposition rate helps achieve uniform coverage of the Pt layer, ensuring consistent film thickness across the entire substrate surface.

[0069] For example, the electrode protective layer 208 can be 150 angstroms and the evaporation rate can be 0.2 angstroms / s.

[0070] In this embodiment of the disclosure, the second contact layer 209 can be a Ti layer, which has good adhesion and can enhance adhesion.

[0071] In this embodiment, the thickness of the second contact layer 209 can be 400–600 angstroms, and the deposition rate can be 1–3 angstroms / s. Using a second contact layer of this thickness ensures optimized electrical connection, reduces contact resistance, and improves conductivity while avoiding excessive thickness that could affect the overall LED thickness. The second contact layer 209 fabricated using the aforementioned deposition rate helps form a highly uniform thin film on the substrate, ensuring the consistency of the contact layer.

[0072] For example, the second contact layer 209 can be 500 angstroms and the evaporation rate can be 2 angstroms / s.

[0073] See you again Figure 1The insulating structure 30 includes a first insulating layer 112 and a second insulating layer 113; the first insulating layer 112 covers the silver mirror structure 20 and the stepped structure 116, the first electrode 108 passes through the first insulating layer 112 and is connected to the silver mirror structure 20, and the second electrode 110 passes through the first insulating layer 112 and is connected to the stepped structure 116; the second insulating layer 113 covers the first electrode 108, the second electrode 110 and the first insulating layer 112.

[0074] The light-emitting diode may also include a first electrode pad 109 and a second electrode pad 111. The first electrode pad 109 passes through the second insulating layer 113 and is connected to the first electrode 108, and the second electrode pad 111 passes through the second insulating layer 113 and is connected to the second electrode 110.

[0075] See you again Figure 2 The first electrode pad 109 and the second electrode pad 111 include an electrode pad contact layer 210, an electrode pad protective layer 211 and an electrode pad soldering layer 212 stacked in sequence.

[0076] In this implementation, the electrode pad contact layer is a Ti layer, which can improve the adhesion between the electrode pad and other material layers, helping to prevent delamination and peeling; the electrode pad protective layer is a Ni layer, which has good resistance to various corrosive media and can protect the pad from corrosion; the electrode pad welding layer is an AuSn layer, which has good stability at high temperatures.

[0077] In this embodiment of the disclosure, the electrode pad contact layer 210 can be a Ti layer, which can improve the adhesion between the electrode pad and other material layers, and help prevent delamination and peeling.

[0078] In this embodiment, the electrode pad contact layer 210 can have a thickness of 100–200 angstroms and a deposition rate of 1–3 angstroms / s. Using an electrode pad contact layer of this thickness ensures optimized electrical connection, reduces contact resistance, and improves conductivity while avoiding excessive thickness that could affect the overall LED thickness. The electrode pad contact layer fabricated using the aforementioned deposition rate helps form a highly uniform thin film on the substrate, ensuring the consistency of the contact layer.

[0079] For example, the electrode pad contact layer 210 can be 150 angstroms, and the evaporation rate can be 2 angstroms / s.

[0080] In this embodiment of the disclosure, the electrode pad protective layer 211 can be a Ni layer, which has good resistance to a variety of corrosive media and can protect the pad from corrosion.

[0081] In this embodiment, the electrode pad protective layer 211 can have a thickness of 2000–3000 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using an electrode pad protective layer of this thickness ensures improved pad wear resistance and reduces the risk of physical damage while avoiding excessive thickness that could affect the overall LED thickness.

[0082] For example, the electrode pad protective layer 211 can be 2500 angstroms, and the evaporation rate can be 5 angstroms / s.

[0083] In this embodiment of the present disclosure, the electrode pad welding layer 212 can be an AuSn layer, which has good stability at high temperatures.

[0084] In this embodiment, the electrode pad bonding layer 212 can have a thickness of 25,000 to 35,000 angstroms, and the evaporation rate can be 5 to 15 angstroms / s. Using an electrode pad bonding layer of this thickness ensures better corrosion resistance and extends the lifespan of the pads while avoiding excessive thickness that could affect the overall LED thickness. Using the aforementioned evaporation rate can shorten production time and improve production efficiency, especially in large-scale production.

[0085] For example, the electrode pad welding layer 212 can be 30,000 angstroms, and the evaporation rate can be 10 angstroms / s.

[0086] like Figure 2 As shown, the edges of the first electrode pad 109 and the second electrode pad 111 overlap the second insulating layer 113, which can prevent the electrode pads from directly contacting the electrode below, reduce stress-induced damage, and improve LED yield.

[0087] In this embodiment of the disclosure, the first insulating layer 112 and the second insulating layer 113 may be silicon dioxide layers.

[0088] In this embodiment of the disclosure, the thickness of the first insulating layer 112 can be 4000 to 5000 angstroms.

[0089] For example, the thickness of the first insulating layer 112 is 4500 angstroms.

[0090] In this embodiment of the disclosure, the thickness of the second insulating layer 113 can be 15,000-20,000 angstroms.

[0091] For example, the second insulating layer 113 has a thickness of 17,500 angstroms.

[0092] In this embodiment of the disclosure, the epitaxial structure 10 includes a first semiconductor layer 102, an active layer 103, and a second semiconductor layer 104.

[0093] The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 are sequentially stacked on the substrate 101. The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 have stepped structures 117 extending to the first semiconductor layer 102, meaning the stepped surfaces are located on the first semiconductor layer 102. The first semiconductor layer 102, the active layer 103, and the second semiconductor layer 104 also have isolation trenches 115 extending to the surface of the first semiconductor layer 102.

[0094] In this embodiment of the disclosure, the silver mirror structure 20 includes a transparent conductive layer 105, a silver mirror reflective layer 106, and a silver mirror protective layer 107.

[0095] The transparent conductive layer 105, the silver mirror reflective layer 106, and the silver mirror protective layer 107 are sequentially stacked on the second semiconductor layer 104, and the silver mirror protective layer 107 wraps the silver mirror reflective layer 106.

[0096] In this embodiment, the transparent conductive layer 105 can be an indium tin oxide (ITO) layer, fabricated using a sputtering process. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form an electrical connection.

[0097] In this embodiment of the disclosure, the thickness of the transparent conductive layer 105 can be 100 to 300 angstroms.

[0098] For example, the thickness of the transparent conductive layer 105 can be 200 angstroms.

[0099] In this embodiment of the disclosure, the silver mirror reflective layer 106 can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, and TiW.

[0100] For example, the silver mirror reflective layer 106 is a stack of Ag, Ni, Ti and TiW.

[0101] In this embodiment of the disclosure, the silver mirror protective layer 107 can be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0102] For example, the silver mirror protective layer 107 is a stack of Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0103] In this embodiment of the disclosure, the substrate 101 can be any one of a sapphire substrate, a Si substrate, or a SiC substrate, and the material of the substrate 101 is not limited in this embodiment of the disclosure.

[0104] For example, substrate 101 is a sapphire substrate.

[0105] In this embodiment of the disclosure, the first semiconductor layer 102 can be an N-type semiconductor layer, and the second semiconductor layer 104 can be a P-type semiconductor layer.

[0106] For example, the first semiconductor layer 102 can be an N-type GaN layer, and the second semiconductor layer 104 can be a P-type GaN layer.

[0107] In other embodiments, the first semiconductor layer 102 may be a P-type semiconductor layer, and the second semiconductor layer 104 may be an N-type semiconductor layer.

[0108] In this embodiment of the disclosure, the active layer 103 can be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0109] It is worth noting that, in the embodiments of this disclosure, the structure can be selectively added or reduced based on the structure of the light-emitting diode described above, and this disclosure does not limit this.

[0110] Figure 3 This is a flowchart illustrating a method for fabricating a light-emitting diode (LED) according to an embodiment of this disclosure. See also... Figure 3 The method includes the following steps:

[0111] S11. Fabricate the extensional structure.

[0112] S12. The extensional structure is graphically processed to form a stepped structure.

[0113] S13. A silver mirror structure is formed on the surface of the epitaxial structure, and the silver mirror structure is located on the surface of the epitaxial structure.

[0114] S14. Fabricate an insulating structure, a first electrode, and a second electrode. The first electrode is located on the surface of the silver mirror structure, and the second electrode is connected to the stepped surface of the stepped structure. The insulating structure covers the stepped structure, the silver mirror structure, the first electrode, and the second electrode. The first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a reflective protective layer, a second adhesive layer, an electrode protective layer, and a second contact layer, which are stacked sequentially. The melting point of the material of the reflective protective layer is higher than that of the material of the first reflective layer, and the melting point of the material of the reflective protective layer is higher than that of the material of the second reflective layer.

[0115] In this embodiment, the first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a second adhesive layer, an electrode protective layer, and a second contact layer stacked sequentially. The first contact layer is used for ohmic contact between the electrode and the epitaxial structure; the second contact layer is used for contact with the pads; the first and second reflective layers increase light reflection; the wrapping layer covers and protects the first contact layer and the first reflective layer; the first and second adhesive layers allow for tighter adhesion between the layers in the electrode structure; and the electrode protective layer protects the layers in the electrode. The reflective protective layer protects the first and second reflective layers, preventing the reactive reflective metals in the first and second reflective layers from reacting with metals such as Au in the pads. Because the melting point of the reflective protective layer is higher than that of the first and second reflective layers, the LED will not melt even at high temperatures during operation, resulting in more stable protection performance. This prevents the Au in the pads from alloying with the reflective metal, which could cause insulation structure breakage and short circuits, thus improving LED yield. Furthermore, the aforementioned electrode structure ensures the electrical performance of the electrodes and pads, thereby improving LED performance.

[0116] Figure 4 This is a flowchart of another method for fabricating a light-emitting diode provided in this disclosure. See also... Figure 4 The method includes the following steps:

[0117] S21. A first semiconductor layer, an active layer, and a second semiconductor layer are sequentially formed on a substrate, and the second semiconductor layer, the active layer, and the first semiconductor layer constitute an epitaxial structure.

[0118] The substrate can be any one of sapphire substrate, Si substrate, and SiC substrate.

[0119] For example, substrate 101 is a sapphire substrate.

[0120] In one example, step S21 includes:

[0121] The first step is to fabricate the first semiconductor layer.

[0122] In this embodiment of the disclosure, the first semiconductor layer is an N-type GaN layer.

[0123] The second step is to create the active layer.

[0124] In this embodiment of the disclosure, the active layer is a multi-quantum well layer, such as an InGaN / GaN multi-quantum well structure.

[0125] The third step is to fabricate the second semiconductor layer.

[0126] In this embodiment of the disclosure, the second semiconductor layer is a P-type GaN layer.

[0127] In this embodiment of the present disclosure, a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate.

[0128] In the embodiments disclosed herein, the above-mentioned semiconductor layer can be grown using a Veeco K465i, C4, or RB MOCVD (Metal Organic Chemical Vapor Deposition) apparatus or an AIXTRON MOCVD apparatus. High-purity H2 (hydrogen), high-purity N2 (nitrogen), or a mixture of high-purity H2 and high-purity N2 is used as the carrier gas; high-purity NH3 is used as the N source; trimethylgallium (TMGa) and triethylgallium (TEGa) are used as gallium sources; trimethylindium (TMIn) is used as the indium source; silane (SiH4) is used as the N-type dopant; trimethylaluminum (TMAl) is used as the aluminum source; and magnesium pyrocene (CP2Mg) is used as the P-type dopant.

[0129] S22. The extensional structure is graphically processed to form a stepped structure and an isolation groove. The stepped surface of the stepped structure and the isolation groove are located within the extensional structure.

[0130] In this embodiment, a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate. The first semiconductor layer, the active layer, and the second semiconductor layer have stepped structures extending to the first semiconductor layer, i.e., the stepped surfaces are located within the first semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer also have isolation trenches extending to the surface of the first semiconductor layer.

[0131] For example, step S22 may include:

[0132] A patterned mask layer is formed on the surface of the second semiconductor layer; under the cover of the mask layer, the epitaxial structure is etched to form steps extending to the first semiconductor layer and isolation trenches extending to the substrate.

[0133] S23. A silver mirror structure is formed on the surface of the epitaxial structure.

[0134] In this embodiment of the disclosure, the step may include:

[0135] The first step is to fabricate a transparent conductive layer on the second semiconductor layer.

[0136] The transparent conductive layer can be an ITO layer with a thickness of 100–300 angstroms. ITO has excellent transparency and conductivity, allowing light to pass through while also conducting current to form electrical connections.

[0137] For example, fabricating a transparent conductive layer may include:

[0138] A layer of ITO film is sputtered; the ITO film is patterned to obtain the ITO layer.

[0139] Patterning an ITO thin film can include: spin-coating photoresist; forming a mask pattern through exposure and development; and performing wet etching on the ITO thin film under the cover of the mask pattern.

[0140] For example, the thickness of the transparent conductive layer can be 200 angstroms.

[0141] The second step is to fabricate a silver mirror reflective layer on the transparent conductive layer.

[0142] In this embodiment of the disclosure, the silver mirror reflective layer is a silver mirror layer produced by vapor deposition process, and can be a combination of one or more metal or alloy layers such as Ag, Ni, Ti, and TiW.

[0143] For example, the silver mirror reflective layer is a stack of Ag, Ni, Ti and TiW.

[0144] The third step is to create a protective layer on the silver mirror reflective layer.

[0145] In this embodiment of the disclosure, the silver mirror protective layer can be a combination of one or more metal or alloy layers such as Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0146] For example, the silver mirror protective layer 107 is a stack of Cr, Al, AlCu, Ti, Ni, Pt and Au.

[0147] S24. Make the first insulating layer.

[0148] The first insulating layer covers the silver mirror structure, the isolation groove, and the stepped structure.

[0149] For example, this step may include:

[0150] The first step is to create a SiO2 layer using a vapor deposition process, with a deposition thickness of 4000–5000 angstroms.

[0151] For example, the thickness of the first insulating layer is 4500 angstroms.

[0152] The second step is to pattern the SiO2 layer and create through-holes in the first insulating layer.

[0153] The first insulating layer has through holes at the protective layer and at the stepped structure.

[0154] S25. Fabricate the first and second electrodes.

[0155] The first electrode is connected to the protective layer through a through-hole in the first insulating layer at the protective layer, and the second electrode is connected to the first semiconductor layer through a through-hole in the first insulating layer at the stepped structure.

[0156] In this embodiment of the disclosure, the first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a first adhesive layer, a second adhesive layer, an electrode protective layer, and a second contact layer, which are stacked sequentially.

[0157] In this embodiment, the first contact layer, first reflective layer, encapsulation layer, second reflective layer, first adhesion layer, second adhesion layer, electrode protective layer, and second contact layer can be fabricated using a vapor deposition process. That is, step S25 may include:

[0158] The first contact layer, the first reflective layer, the encapsulation layer, the second reflective layer, the first adhesion layer, the first adhesion layer, the second adhesion layer, the electrode protective layer, and the second contact layer are deposited sequentially by vapor deposition.

[0159] In this embodiment, the first contact layer can be a Cr layer. Cr has good conductivity and can be used for ohmic contact between the electrode and the epitaxial structure.

[0160] In this embodiment, the thickness of the first contact layer can be 40 to 60 angstroms, and the evaporation rate can be 0.1 to 0.5 angstroms / s. Using the above-mentioned thickness of the first contact layer can ensure conductivity while avoiding excessive thickness that would affect the overall thickness of the LED. Using the above-mentioned evaporation rate to fabricate the first contact layer can deposit the first contact layer more uniformly and ensure evaporation efficiency.

[0161] For example, the thickness of the first contact layer can be 50 angstroms, and the evaporation rate can be 0.2 angstroms / s.

[0162] In this embodiment, the first reflective layer can be an Al layer, which has good reflectivity and conductivity, thereby improving light reflectivity while ensuring the electrical performance of the electrodes.

[0163] In this embodiment, the thickness of the first reflective layer can be 2900-3100 angstroms, and the evaporation rate can be 2-4 angstroms / s. Using the above-mentioned thickness of the first reflective layer can ensure reflectivity while avoiding excessive thickness from affecting the overall LED thickness. Using the above-mentioned evaporation rate to fabricate the first reflective layer can deposit the first reflective layer more uniformly and ensure evaporation efficiency.

[0164] For example, the first reflective layer can be 3000 angstroms thick and the evaporation rate can be 3 angstroms / s.

[0165] In this embodiment of the disclosure, the coating layer may include a Ti sublayer and a 10% AlCu alloy sublayer stacked sequentially. The Ti layer has good adhesion, which can enhance adhesion. The AlCu alloy with an Al content of 10% makes the evaporation process more stable, does not produce metal particles, avoids the rupture of the upper film layer, and improves the LED yield.

[0166] In this embodiment, the thickness of the Ti sublayer can be 400–600 angstroms, and the evaporation rate can be 1–3 angstroms / s. The thickness of the AlCu alloy sublayer can be 1900–2100 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using the above-mentioned thickness of the Ti sublayer ensures adhesion while avoiding excessive thickness that could affect the overall LED thickness. Using the above-mentioned evaporation rate allows for more uniform deposition of the Ti sublayer while maintaining evaporation efficiency. Using the above-mentioned thickness of the AlCu alloy sublayer ensures good thermal conductivity, aiding in heat dissipation while avoiding excessive thickness that could affect the overall LED thickness. Using the above-mentioned evaporation rate allows for more uniform deposition of the AlCu alloy sublayer while maintaining evaporation efficiency.

[0167] For example, the thickness of the Ti sublayer can be 500 angstroms, and the evaporation rate can be 2 angstroms / s. The thickness of the AlCu alloy sublayer can be 2000 angstroms, and the evaporation rate can be 5 angstroms / s.

[0168] In this embodiment of the disclosure, the second reflective layer can be an Al layer, which has good reflectivity and can improve the reflectivity of light.

[0169] In this embodiment, the thickness of the second reflective layer can be 1900–2100 angstroms, and the deposition rate can be 5–7 angstroms / s. Using the above-mentioned thickness of the second reflective layer ensures high reflectivity while avoiding excessive thickness that could affect the overall LED thickness. The second reflective layer fabricated using the above-mentioned deposition rate allows for more uniform deposition of the second reflective layer while maintaining deposition efficiency.

[0170] For example, the second reflective layer can be 2000 angstroms, and the evaporation rate can be 6 angstroms / s.

[0171] In this embodiment of the disclosure, the first adhesive layer may be a Cr layer, which has good adhesion and reduces the risk of delamination and peeling.

[0172] In this embodiment, the thickness of the first adhesion layer can be 100–200 angstroms, and the evaporation rate can be 0.1–0.3 angstroms / s. Using the above-mentioned thickness of the first adhesion layer ensures adhesion without making the electrode too thick; using the above-mentioned evaporation rate allows for more uniform deposition of the first adhesion layer while maintaining evaporation efficiency.

[0173] For example, the first adhesion layer can be 150 angstroms and the evaporation rate can be 0.2 angstroms / s.

[0174] In this embodiment, the reflective protective layer can be a Ni layer. Ni has a higher melting point than Al and is less reactive, thus protecting the reflective layer.

[0175] In this embodiment, the thickness of the reflective protective layer can be 2400–2600 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using a reflective protective layer of this thickness ensures improved wear resistance of the overall electrode structure while avoiding excessive thickness that could affect the overall LED thickness. Furthermore, using the aforementioned evaporation rate allows for more precise thickness control, better film quality, and higher fabrication efficiency.

[0176] For example, the reflective protective layer can be 2500 angstroms, and the evaporation rate can be 5 angstroms / s.

[0177] In this implementation, a Ni layer is added to the electrode adhesion layer as a protective layer. Because the Ni layer has a high melting point, it can effectively prevent Au in the electrode pads from directly contacting Al in the electrode, thus avoiding the formation of the Kirkendall effect (i.e., voids will form in the electrode pads), which would cause the electrode to expand and the insulation layer between the electrodes to break. This avoids short circuits that could lead to electrode failure and improves the LED yield.

[0178] In this embodiment of the disclosure, the second adhesive layer may be a Cr layer, which has good adhesion and can improve the adhesion between the sublayers, thus helping to prevent delamination and peeling.

[0179] In this embodiment, the thickness of the second adhesion layer can be 100–200 angstroms, and the evaporation rate can be 0.1–0.3 angstroms / s. Using the above-mentioned thickness of the second adhesion layer reduces material usage without sacrificing adhesion, achieving cost-effectiveness. Using the above-mentioned evaporation rate to fabricate the second adhesion layer allows for more uniform deposition while ensuring evaporation efficiency.

[0180] For example, the second adhesion layer can be 150 angstroms and the evaporation rate can be 0.2 angstroms / s.

[0181] In this embodiment of the disclosure, the electrode protective layer can be a Pt layer, which is a highly corrosion-resistant metal that can protect the underlying material from corrosive environments.

[0182] In this embodiment, the thickness of the electrode protective layer can be 1900–2100 angstroms, and the evaporation rate can be 1–3 angstroms / s. Using an electrode protective layer of this thickness ensures optimized physical properties such as corrosion resistance, electrical conductivity, and thermal conductivity while avoiding excessive thickness that could affect the overall LED thickness. The electrode protective layer fabricated using the aforementioned evaporation rate helps achieve uniform coverage of the Pt layer, ensuring consistent film thickness across the entire substrate surface.

[0183] For example, the electrode protective layer can be 150 angstroms and the evaporation rate can be 0.2 angstroms / s.

[0184] In this embodiment of the disclosure, the second contact layer can be a Ti layer, which has good adhesion.

[0185] In this embodiment, the thickness of the second contact layer can be 400–600 angstroms, and the deposition rate can be 1–3 angstroms / s. Using a second contact layer of this thickness ensures optimized electrical connection, reduced contact resistance, and improved conductivity while avoiding excessive thickness that could affect the overall LED thickness. The second contact layer fabricated using the aforementioned deposition rate helps form a highly uniform thin film on the substrate, ensuring the consistency of the contact layer.

[0186] For example, the second contact layer can be 500 angstroms, and the evaporation rate can be 2 angstroms / s.

[0187] S26. Make the second insulating layer.

[0188] For example, this step may include:

[0189] The first step is to create a SiO2 layer using a vapor deposition process, with a deposition thickness of 15,000-20,000 angstroms.

[0190] For example, the second insulating layer has a vapor deposition thickness of 17,500 angstroms.

[0191] The second step is to pattern the SiO2 layer and create through-holes in the second insulating layer.

[0192] The second insulating layer has through holes at the first electrode and the second electrode, respectively.

[0193] S27. Fabricate the first electrode pad and the second electrode pad.

[0194] In this embodiment, a first electrode pad passes through a second insulating layer and is connected to the first electrode, and a second electrode pad passes through the second insulating layer and is connected to the second electrode. The first and second electrode pads each comprise an electrode pad contact layer, an electrode pad protective layer, and an electrode pad soldering layer stacked sequentially.

[0195] In this implementation, the Ti layer of the electrode pad contact layer can improve the adhesion between the electrode pad and other material layers, which helps to prevent delamination and peeling; the Ni layer of the electrode pad protective layer has good resistance to a variety of corrosive media and can protect the pad from corrosion; the AuSn layer of the electrode pad soldering layer has good stability at high temperatures.

[0196] In this embodiment of the disclosure, the electrode pad contact layer can be a Ti layer, which can improve the adhesion between the electrode pad and other material layers, and help prevent delamination and peeling.

[0197] In this embodiment, the thickness of the electrode pad contact layer can be 100–200 angstroms, and the evaporation rate can be 1–3 angstroms / s. Using an electrode pad contact layer of this thickness ensures optimized electrical connection, reduces contact resistance, and improves conductivity while avoiding excessive thickness that could affect the overall LED thickness. The electrode pad contact layer fabricated using the aforementioned evaporation rate helps form a highly uniform thin film on the substrate, ensuring the consistency of the contact layer.

[0198] For example, the electrode pad contact layer can be 150 angstroms, and the evaporation rate can be 2 angstroms / s.

[0199] In this embodiment of the disclosure, the electrode pad protective layer can be a Ni layer, which has good resistance to a variety of corrosive media and can protect the pad from corrosion.

[0200] In this embodiment, the thickness of the electrode pad protective layer can be 2000–3000 angstroms, and the evaporation rate can be 4–6 angstroms / s. Using an electrode pad protective layer of this thickness ensures improved wear resistance of the pads, reduces the risk of physical damage, and avoids excessive thickness affecting the overall thickness of the LED.

[0201] For example, the electrode pad protective layer can be 2500 angstroms, and the evaporation rate can be 5 angstroms / s.

[0202] In this embodiment of the disclosure, the electrode pad welding layer can be an AuSn layer, which has good stability at high temperatures.

[0203] In this embodiment, the thickness of the electrode pad bonding layer can be 25,000 to 35,000 angstroms, and the evaporation rate can be 5 to 15 angstroms / s. Using an electrode pad bonding layer of this thickness ensures better corrosion resistance and extends the lifespan of the pads while avoiding excessive thickness that could affect the overall LED thickness. The electrode pad bonding layer produced using the aforementioned evaporation rate helps to shorten production time and improve production efficiency, especially in large-scale production.

[0204] For example, the electrode pad bonding layer can be 30,000 angstroms, and the evaporation rate can be 10 angstroms / s.

[0205] Table 1 compares the failed chips of the electrode structures provided in this disclosure and related technologies under high-temperature load conditions. As shown in Table 1, the electrode structure provided by the related technologies resulted in the failure of two LEDs after 500 hours of high-temperature load aging, while the electrode structure provided in this disclosure did not fail after 1000 hours of high-temperature load aging. It is evident that the electrode structure provided in this disclosure effectively solves the problem of forming gold-aluminum alloys and exhibits high reliability.

[0206] Table 1

[0207]

[0208] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A light-emitting diode, characterized in that, The light-emitting diode includes: an epitaxial structure (10), a silver mirror structure (20), an insulating structure (30), a first electrode (108), and a second electrode (110); The epitaxial structure (10) has a stepped structure (116), and the silver mirror structure (20) is located on the surface of the epitaxial structure (10); the first electrode (108) is located on the surface of the silver mirror structure (20), and the second electrode (110) is connected to the stepped surface of the stepped structure (116); the insulating structure (30) covers the stepped structure (116), the silver mirror structure (20), the first electrode (108), and the second electrode (110); The first electrode (108) and the second electrode (110) include a first contact layer (201), a first reflective layer (202), a wrapping layer (203), a second reflective layer (204), a first adhesion layer (205), a reflective protective layer (206), a second adhesion layer (207), an electrode protective layer (208), and a second contact layer (209) stacked sequentially. The melting point of the material of the reflective protective layer (206) is higher than that of the material of the first reflective layer (202), and the melting point of the material of the reflective protective layer (206) is higher than that of the material of the second reflective layer (204).

2. The light-emitting diode according to claim 1, characterized in that, The first contact layer (201) is a Cr layer, the first reflective layer (202) is an Al layer, the encapsulation layer (203) includes a Ti sublayer and an AlCu alloy sublayer with an Al content of 10% stacked sequentially, the second reflective layer (204) is an Al layer, the first adhesion layer (205) is a Cr layer, the reflective layer protective layer (206) is a Ni layer, the second adhesion layer (207) is a Cr layer, the electrode protective layer (208) is a Pt layer, and the second contact layer (209) is a Ti layer.

3. The light-emitting diode according to claim 2, characterized in that, The thickness of the first contact layer (201) is 40-60 angstroms, the thickness of the first reflective layer (202) is 2500-3500 angstroms, the thickness of the Ti sublayer in the encapsulation layer (203) is 400-600 angstroms, the thickness of the AlCu alloy sublayer is 1500-2500 angstroms, the thickness of the second reflective layer (204) is 1500-2500 angstroms, the thickness of the first adhesion layer (205) is 100-200 angstroms, the thickness of the reflective layer protective layer (206) is 2000-3000 angstroms, the thickness of the second adhesion layer (207) is 100-200 angstroms, the thickness of the electrode protective layer (208) is 1500-2500 angstroms, and the thickness of the second contact layer (209) is 400-600 angstroms.

4. The light-emitting diode according to any one of claims 1 to 3, characterized in that, The insulating structure (30) includes a first insulating layer (112) and a second insulating layer (113); the first insulating layer (112) covers the silver mirror structure (20) and the stepped structure (116), the first electrode (108) passes through the first insulating layer (112) and is connected to the silver mirror structure (20), and the second electrode (110) passes through the first insulating layer (112) and is connected to the stepped structure (116); the second insulating layer (113) covers the first electrode (108), the second electrode (110), and the first insulating layer (112); The light-emitting diode further includes: a first electrode pad (109) and a second electrode pad (111), wherein the first electrode pad (109) passes through the second insulating layer (113) and is connected to the first electrode (108), and the second electrode pad (111) passes through the second insulating layer (113) and is connected to the second electrode (110). The first electrode pad (109) and the second electrode pad (111) include an electrode pad contact layer (210), an electrode pad protective layer (211) and an electrode pad soldering layer (212) stacked in sequence.

5. The light-emitting diode according to claim 4, characterized in that, The electrode pad contact layer (210) is a Ti layer, the electrode pad protective layer (211) is a Ni layer, and the electrode pad welding layer (212) is an AuSn layer.

6. The light-emitting diode according to claim 5, characterized in that, The electrode pad contact layer (210) has a thickness of 100 to 200 angstroms, the electrode pad protective layer (211) has a thickness of 2000 to 3000 angstroms, and the electrode pad welding layer (212) has a thickness of 25000 to 35000 angstroms.

7. A method for fabricating a light-emitting diode, characterized in that, The method includes: Fabrication of epitaxial structures; The extensional structure is graphically processed to form a stepped structure; A silver mirror structure is formed on the surface of the epitaxial structure, and the silver mirror structure is located on the surface of the epitaxial structure. An insulating structure, a first electrode, and a second electrode are fabricated. The first electrode is located on the surface of the silver mirror structure, and the second electrode is connected to the stepped surface of the stepped structure. The insulating structure covers the stepped structure, the silver mirror structure, the first electrode, and the second electrode. The first electrode and the second electrode include a first contact layer, a first reflective layer, a wrapping layer, a second reflective layer, a first adhesive layer, a reflective protective layer, a second adhesive layer, an electrode protective layer, and a second contact layer, which are stacked sequentially. The melting point of the material of the reflective protective layer is higher than that of the material of the first reflective layer, and the melting point of the material of the reflective protective layer is higher than that of the material of the second reflective layer.

8. The method for fabricating a light-emitting diode according to claim 7, characterized in that, The first contact layer is a Cr layer, the first reflective layer is an Al layer, the encapsulation layer includes a Ti sublayer and an AlCu alloy sublayer with an Al content of 10% stacked sequentially, the second reflective layer is an Al layer, the first adhesion layer is a Cr layer, the reflective layer protective layer is a Ni layer, the second adhesion layer is a Cr layer, the electrode protective layer is a Pt layer, and the second contact layer is a Ti layer.

9. The method for fabricating a light-emitting diode according to claim 8, characterized in that, The thickness of the first contact layer is 40–60 angstroms, the thickness of the first reflective layer is 2500–3500 angstroms, the thickness of the Ti sublayer in the encapsulation layer is 400–600 angstroms, the thickness of the AlCu alloy sublayer is 1500–2500 angstroms, the thickness of the second reflective layer is 1500–2500 angstroms, the thickness of the first adhesion layer is 100–200 angstroms, the thickness of the reflective protective layer is 2000–3000 angstroms, the thickness of the second adhesion layer is 100–200 angstroms, the thickness of the electrode protective layer is 1500–2500 angstroms, and the thickness of the second contact layer is 400–600 angstroms.

10. The method for fabricating a light-emitting diode according to claim 8, characterized in that, The evaporation rate of the first contact layer is 0.3–0.5 Å / s, the evaporation rate of the first reflective layer is 2–4 Å / s, the evaporation rate of the Ti sublayer in the encapsulation layer is 1–3 Å / s, the evaporation rate of the AlCu alloy sublayer is 4–6 Å / s, the evaporation rate of the second reflective layer is 5–7 Å / s, the evaporation rate of the first adhesion layer is 0.1–0.3 Å / s, the evaporation rate of the reflective protective layer is 4–6 Å / s, the evaporation rate of the second adhesion layer is 0.1–0.3 Å / s, the evaporation rate of the electrode protective layer is 1–3 Å / s, and the evaporation rate of the second contact layer is 1–3 Å / s.

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