Perovskite photovoltaic device based on conductive adhesive bonding and preparation method thereof

Abstract

The application discloses a perovskite photovoltaic device based on conductive glue bonding and a preparation method thereof. The perovskite photovoltaic device based on conductive glue bonding comprises an anode substrate, a self-assembled monolayer, a conductive glue layer, a perovskite layer, an electron transport layer, a hole blocking layer and a cathode electrode which are sequentially arranged on one side of the anode substrate, and the material of the conductive glue layer is selected from one or more of polyaniline, polythiophene, polypyrrole and polyacetylene. The conductive glue is used as a conductive adhesive, interacts with the perovskite and is bonded with the self-assembled monolayer at the same time, the buried bottom interface contact is improved, the charge transport and stability of the interface contact are improved, and the overall performance of the photovoltaic device is significantly improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of perovskite photovoltaic devices, in particular to a perovskite photovoltaic device based on conductive adhesive bonding and a preparation method thereof. BACKGROUND

[0002] With the rapid development of perovskite solar cell technology, perovskite materials have shown broad application prospects in the photovoltaic field due to their high photoelectric conversion efficiency, low cost and convenient preparation process. However, during the preparation of photovoltaic devices, the interface contact quality between the perovskite layer and the hole transport layer directly affects the performance and stability of the device, especially the improvement of the charge transport efficiency and interface contact of the buried bottom interface, which is crucial to improve the efficiency of perovskite solar cells. Although the traditional interface modification method, such as using hole transport material, can improve the performance of the device to a certain extent, there are still challenges in the interface stability and long-term efficiency maintenance.

[0003] Self-assembled monolayers (SAMs) have been widely used in interface modification and charge transfer optimization due to their ability to spontaneously form ordered and stable molecular layers on different material surfaces. By adjusting the chemical composition and structure of SAM molecules, the interface properties between perovskite and electrode can be effectively improved. However, how to more effectively bond self-assembled monolayers with perovskite materials and improve the interface quality is still a difficulty in current research. SUMMARY

[0004] To solve the above technical problems, the primary object of the present application is to provide a perovskite photovoltaic device based on conductive adhesive bonding.

[0005] Another object of the present application is to provide a preparation method of a perovskite photovoltaic device based on conductive adhesive bonding.

[0006] The present application is realized by the following technical solutions:

[0007] A perovskite photovoltaic device based on conductive adhesive bonding, comprising an anode substrate, a self-assembled monolayer, a conductive adhesive layer, a perovskite layer, an electron transport layer, a hole blocking layer and a cathode electrode arranged in sequence on one side of the anode substrate, and the material of the conductive adhesive layer is selected from one or more of polyaniline, polythiophene, polypyrrole and polyacetylene.

[0008] The conductive adhesive with strong adhesion and high conductivity is used in the present application to build a bonding bridge between the self-assembled monolayer and the perovskite layer. The passivation groups of the conductive adhesive passivate the buried bottom interface defects in the perovskite, and the π-π interaction between the molecules and the self-assembled monolayer promotes charge transport and optimizes the buried bottom interface contact.

[0009] Further, the molecular weight of the material of the conductive adhesive layer is 50000-60000 Da.

[0010] Further, the material of the self-assembled monolayer is selected from one or more of 2-phenylcarbazole ethyl phosphonic acid, (2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl) phosphonic acid, (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl) phosphonic acid and 4-(3,6-dimethoxycarbazol-9-yl) butyl phosphonic acid.

[0011] A method for preparing the perovskite photovoltaic device based on conductive adhesive bonding described above, comprising the following steps:

[0012] S1. Preparing a self-assembled monolayer on an anode substrate;

[0013] S2. Preparing a conductive adhesive layer on the self-assembled monolayer prepared in S1;

[0014] S3. Preparing a perovskite layer on the conductive adhesive layer prepared in S2;

[0015] S4. Preparing an electron transport layer on the perovskite layer prepared in S3;

[0016] S5. Preparing a hole blocking layer and a cathode electrode in sequence on the electron transport layer prepared in S4 to obtain the perovskite photovoltaic device based on conductive adhesive bonding.

[0017] The present application realizes the preparation of high-efficiency perovskite photovoltaic devices by bonding the interface between the self-assembled monolayer and the perovskite layer with conductive adhesive. The conductive adhesive molecules not only provide stable physical bonding, but also enhance the charge transfer efficiency of the interface, thereby improving the photoelectric conversion efficiency of the perovskite photovoltaic device. Compared with traditional interface processing methods, the use of conductive adhesive can effectively reduce the interface defects between the perovskite layer and the self-assembled monolayer, thereby significantly improving the overall performance of the photovoltaic device.

[0018] Further, in step S1, the anode substrate comprises an indium tin oxide (ITO) substrate.

[0019] In the specific embodiment, the ITO substrate is cleaned, the cleaned ITO substrate is dried, and the obtained ITO substrate has good conductivity, light transmittance and flatness after ultraviolet treatment.

[0020] Further, in step S1, the preparation of the self-assembled monolayer comprises the following steps: spin coating a self-assembled monolayer solution on the anode substrate at 2500-3500 rpm, and obtaining the self-assembled monolayer after annealing treatment at 90-110℃.

[0021] Further, the preparation method of the self-assembled monomolecular solution comprises the following steps: dissolving the self-assembled monomolecule in an organic solvent to obtain a self-assembled monomolecular solution.

[0022] Further, the organic solvent is preferably ethanol.

[0023] Further, the spin coating time is 20-40 s.

[0024] Further, the annealing time is 8-12 min.

[0025] Further, in step S2, the preparation of the conductive adhesive layer comprises the following steps: dissolving the conductive adhesive in an organic solvent to obtain a conductive adhesive solution; and coating the conductive adhesive solution on the self-assembled monomolecular layer.

[0026] Further, the organic solvent is preferably N-methyl pyrrolidone (NMP).

[0027] Further, the concentration of the conductive adhesive in the conductive adhesive solution is 0.05-0.5 mg / mL.

[0028] In a specific embodiment, the conductive adhesive is dissolved in an organic solvent, and stirred at 50-60℃ for 1-2 h to obtain the conductive adhesive solution.

[0029] Further, in step S2, the conductive adhesive solution is spin coated on the self-assembled monomolecular layer, and the conductive adhesive layer is obtained after annealing.

[0030] Further, the spin coating speed is 3500-4500 rpm, and the spin coating time is 15-30 s.

[0031] Further, the annealing temperature is 90-110℃.

[0032] Further, the annealing time is 4-6 min.

[0033] Further, in step S3, the preparation of the perovskite layer comprises the following steps: dissolving lead formamidate iodide (FAPbI3) in an organic solvent to obtain a perovskite solution; and coating the perovskite solution on the conductive adhesive layer.

[0034] Further, the organic solvent is dimethylformamide (DMF) and / or dimethyl sulfoxide (DMSO), and when DMF and DMSO are used as mixed solvents, the volume ratio of DMF to DMSO is 4:1.

[0035] In a specific embodiment, FAPbI3 is dissolved in an organic solvent, and stirred at 50-60℃ for 5-6 h to obtain the perovskite solution.

[0036] Further, the solid-liquid ratio of the FAPbI3 and the organic solvent is (600-800) mg:1 mL.

[0037] Further, an additive is added in the perovskite solution, and the additive can be methylammonium chloride (MACl).

[0038] Further, the mass ratio of the FAPbI3 and the additive is (60-80):1.

[0039] Further, in the step S2, the perovskite solution is spin-coated on the conductive adhesive layer, and the perovskite layer is obtained after annealing treatment.

[0040] Further, the spin-coating speed is 5500-6500 rpm, the anti-solvent is added at 25-30 s after the start of spin-coating, and the annealing treatment is performed at 90-110 DEG C for 20-30 min after spin-coating for 25-30 s.

[0041] Further, the anti-solvent includes chlorobenzene (CB).

[0042] Further, in the step S4, the electron transport layer is prepared by spin-coating, and the spin-coating speed is 1500-2500 rpm, and the spin-coating time is 20-40 s.

[0043] Further, the material of the electron transport layer includes fullerene derivative (PCBM).

[0044] Further, in the step S5, the hole blocking layer and the cathode electrode are sequentially prepared by thermal evaporation deposition.

[0045] Further, the material of the hole blocking layer includes bathocuproine (BCP), and the cathode electrode includes silver (Ag) electrode.

[0046] Further, the thickness of the self-assembled monolayer is 5-10 nm, the thickness of the conductive adhesive layer is 20-40 nm, the thickness of the perovskite layer is 500-600 nm, the thickness of the electron transport layer is 30-40 nm, the thickness of the hole blocking layer is 8-10 nm, and the thickness of the cathode electrode is 100-110 nm.

[0047] Compared with the prior art, the present application has the following beneficial effects:

[0048] 1、The conductive glue is used as the conductive adhesive in the application, which interacts with perovskite and is bonded with self-assembled monolayer at the same time, improves the buried bottom interface contact, improves the charge transport and stability of the interface contact, and further significantly improves the overall performance of the photovoltaic device. The application provides a conductive glue bonding strategy, and the interface treatment method has important application potential in the development of high-efficiency perovskite photovoltaic devices in the future, and provides a new idea and technical support for further improving the efficiency and stability of the photovoltaic device.

[0049] 2、The perovskite photovoltaic device based on the conductive glue bonding provided by the application has a photoelectric conversion efficiency (PCE) of 25.59% under the irradiation of AM 1.5G sunlight, and still maintains 97.3% of the initial efficiency after 1200 hours of aging under air conditions and light-emitting diode light, and has excellent performance and stability. BRIEF DESCRIPTION OF DRAWINGS

[0050] Figure 1 It is a schematic diagram of the perovskite photovoltaic device structure and the conductive glue bonding mechanism of Example 1.

[0051] Figure 2 It is a DLCP curve diagram of the perovskite photovoltaic device of Example 1 and Comparative Example 1.

[0052] Figure 3 It is a conductivity test curve diagram of the perovskite photovoltaic device of Example 1 and Comparative Example 1.

[0053] Figure 4 It is a J-V test curve diagram of the perovskite photovoltaic device of Example 1-4 and Comparative Example 1 under the irradiation of AM 1.5G sunlight.

[0054] Figure 5 It is an EQE and integrated current curve diagram of the perovskite photovoltaic device of Example 1 and Comparative Example 1.

[0055] Figure 6 It is a PCE decay curve diagram of the perovskite photovoltaic device of Example 1 and Comparative Example 1 under air conditions and light-emitting diode light. DETAILED DESCRIPTION

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0057] The application provides a perovskite photovoltaic device based on conductive adhesive bonding, comprising an anode substrate, a self-assembled monolayer, a conductive adhesive layer, a perovskite layer, an electron transport layer, a hole blocking layer and a cathode electrode arranged in sequence on one side of the anode substrate, and the material of the conductive adhesive layer is selected from one or more of polyaniline, polythiophene, polypyrrole and polyacetylene.

[0058] The application also provides a preparation method of the perovskite photovoltaic device based on conductive adhesive bonding, comprising the following steps:

[0059] S1. Preparing a self-assembled monolayer on an anode substrate;

[0060] S2. Preparing a conductive adhesive layer on the self-assembled monolayer prepared in S1;

[0061] S3. Preparing a perovskite layer on the conductive adhesive layer prepared in S2;

[0062] S4. Preparing an electron transport layer on the perovskite layer prepared in S3;

[0063] S5. Preparing a hole blocking layer and a cathode electrode in sequence on the electron transport layer prepared in S4 to obtain the perovskite photovoltaic device.

[0064] In the specific embodiment, the preparation method comprises the following steps:

[0065] S1. Cleaning an ITO substrate, drying the cleaned ITO substrate, performing ultraviolet treatment, and then spin-coating a self-assembled monolayer solution on the ITO substrate to obtain a self-assembled monolayer;

[0066] S2. Spin-coating a conductive adhesive solution on the self-assembled monolayer, and then performing annealing treatment to obtain the conductive adhesive layer;

[0067] S3. Spin-coating a perovskite solution on the conductive adhesive layer, and then performing annealing treatment to obtain the perovskite layer;

[0068] S4. Preparing an electron transport layer on the perovskite layer by using a spin-coating method;

[0069] S5. Preparing a hole blocking layer and a cathode electrode in sequence on the electron transport layer by using a thermal evaporation deposition method to obtain the perovskite photovoltaic device based on conductive adhesive bonding.

[0070] The application will be further described in conjunction with the drawings and specific embodiments so that those skilled in the art can better understand the application and implement it, but the embodiments are not used as limitations to the application.

[0071] In the following examples and comparative examples, the experimental methods are conventional methods unless otherwise specified, and the materials, reagents and the like used are commercially available unless otherwise specified.

[0072] ITO substrates, formamidinium lead iodide (FAPbI3) and methylammonium chloride (MACl) used in the following examples and comparative examples were purchased from Advanced Election Technology Co., Ltd. Dimethyl sulfoxide (DMSO), N,N-dimethylformamide (DMF), ethanol and N-methyl pyrrolidone (NMP) were purchased from Alfa Aesar Ltd. Conductive adhesive (polyaniline, polythiophene, polypyrrole, polyacetylene) with a molecular weight of 50000-60000 Da was purchased from Macklin Ltd.

[0073] In the following examples and comparative examples, the preparation method of the perovskite solution was as follows: 679 mg of FAPbI3 and 10 mg of MACl were dissolved in 1 mL of a mixed solvent of DMF and DMSO, the volume ratio of DMF and DMSO was 4:1, and the perovskite solution was obtained by stirring at 60°C for 6h.

[0074] Example 1

[0075] A perovskite photovoltaic device based on conductive adhesive bonding of ITO / MeO-2PACz / PANI / Perovskite / PCBM / BCP / Ag inverted structure, comprising an ITO substrate, a MeO-2PACz layer, a PANI layer, a Perovskite layer, a PCBM layer, a BCP layer and an Ag electrode arranged in sequence on one side of the ITO substrate, and was prepared by the following method:

[0076] S1. Preparing a 10 nm MeO-2PACz layer on the ITO substrate: 0.5 mg of MeO-2PACz was dissolved in 1 mL of ethanol to obtain a MeO-2PACz solution; the ITO substrate was repeatedly ultrasonically cleaned with deionized water and ethanol three times, then baked for 20 min to completely remove the solvent and moisture, treated with ultraviolet light and ozone for 25 min, and 70 microliters of the MeO-2PACz solution was placed on the ITO substrate and spin-coated at a speed of 3000 rpm for 30 s, and then annealed at 100°C for 10 min to obtain the MeO-2PACz layer.

[0077] S2. Preparing a 30 nm PANI layer on the MeO-2PACz layer described in S1: PANI was dissolved in NMP and stirred at 60°C for 1 h to prepare a PANI solution with a concentration of 0.1 mg / mL; 30 microliters of the PANI solution was added dropwise on the MeO-2PACz layer, spin-coated at 4000 rpm for 30 s, and then annealed at 100°C for 5 min to obtain the PANI layer.

[0078] S3. Preparing a 500nm Perovskite layer on the PANI layer described in S2: 70 microliters of perovskite solution was coated on the PANI layer, and spin coating was performed at 6000 rpm, 200 μL of CB was added at the 25th second after the start of spin coating, and spin coating was continued for 15 seconds before being transferred to a heating table for annealing treatment at 100°C for 30 minutes to obtain a Perovskite layer.

[0079] S4. Preparing a 30nm PCBM layer on the Perovskite layer described in S3: 60 microliters of 20mg / mL PCBM solution was coated on the Perovskite layer, and spin coating was performed at 2000 rpm for 30 seconds to obtain a PCBM layer.

[0080] S5. Preparing a BCP layer and an Ag electrode on the PCBM layer described in S4 in sequence: a 8nm BCP layer and a 100nm Ag electrode were prepared in sequence by using a thermal evaporation deposition method.

[0081] Example 2

[0082] A perovskite photovoltaic device based on conductive adhesive bonding of ITO / Me-4PACz / PANI / Perovskite / PCBM / BCP / Ag inverted structure, comprising an ITO substrate, a Me-4PACz layer, a PANI layer, a Perovskite layer, a PCBM layer, a BCP layer and an Ag electrode arranged in sequence on one side of the ITO substrate, and being prepared by the following method:

[0083] S1. Preparing a 10nm Me-4PACz layer on an ITO substrate: 0.5mg Me-4PACz was dissolved in 1mL ethanol to obtain a Me-4PACz solution; the ITO substrate was cleaned with deionized water and ethanol repeatedly for three times, and then baked for 20min to completely remove the solvent and moisture, treated with ultraviolet light and ozone for 25min, and 70 microliters of Me-4PACz solution was coated and spin coated on the ITO substrate at 3000 rpm for 30s, and annealing treatment was performed at 100°C for 10min to obtain a Me-4PACz layer.

[0084] S2. Preparing a 30nm PANI layer on the Me-4PACz layer described in S1: PANI was dissolved in NMP, and a 0.1mg / mL PANI solution was prepared by stirring at 60°C for 1h; 30 microliters of PANI solution was added dropwise on the Me-4PACz layer, and spin coating was performed at 4000 rpm for 30s, and annealing treatment was performed at 100°C for 5min to obtain a PANI layer.

[0085] S3. Preparing a 500nm Perovskite layer on the PANI layer described in S2: 70 microliters of Perovskite solution was coated on the PANI layer, and spin-coated at a speed of 6000 rpm, 200μL of CB was added at the 25th second after the spin-coating started, and the spin-coating was continued for 15 seconds before being transferred to a heating table for annealing treatment at 100℃ for 30 minutes, to obtain the Perovskite layer.

[0086] S4. Preparing a 30nm PCBM layer on the Perovskite layer described in S3: 60 microliters of 20mg / mL PCBM solution was coated on the Perovskite layer, and spin-coated at a speed of 2000 rpm for 30 seconds, to obtain the PCBM layer.

[0087] S5. Preparing a BCP layer and an Ag electrode on the PCBM layer described in S4 in sequence: a 8nm BCP layer and a 100nm Ag electrode were prepared in sequence by using a thermal evaporation deposition method.

[0088] Example 3

[0089] A Perovskite photovoltaic device based on conductive adhesive bonding of ITO / MeO-2PACz / PTH / Perovskite / PCBM / BCP / Ag inverted structure, comprising an ITO substrate, a MeO-2PACz layer, a PTH layer, a Perovskite layer, a PCBM layer, a BCP layer and an Ag electrode arranged in sequence on one side of the ITO substrate, and being prepared by the following method:

[0090] S1. Preparing a 10nm MeO-2PACz layer on an ITO substrate: 0.5mg of MeO-2PACz was dissolved in 1mL of ethanol to obtain a MeO-2PACz solution; the ITO substrate was cleaned with deionized water and ethanol repeatedly for three times, and then baked for 20min to completely remove the solvent and moisture, and treated with ultraviolet light and ozone for 25min, 70 microliters of the MeO-2PACz solution was coated, and the MeO-2PACz solution was spin-coated on the ITO substrate at a speed of 3000 rpm for 30s, and annealed at 100℃ for 10min, to obtain the MeO-2PACz layer.

[0091] S2. Preparing a 30nm PTH layer on the MeO-2PACz layer described in S1: PTH was dissolved in NMP, and a PTH solution with a concentration of 0.1mg / mL was prepared by stirring at 60℃ for 1h; 30 microliters of the PTH solution was added dropwise on the MeO-2PACz layer, and spin-coated at 4000 rpm for 30s, and annealed at 100℃ for 5min, to obtain the PTH layer.

[0092] S3. Preparing a 500nm Perovskite layer on the PTH layer prepared in S2: 70 microliters of Perovskite solution was coated on the PTH layer, and spin-coated at a speed of 6000rpm, 200μL of CB was added at the 25th second after the spin-coating started, and the spin-coating was continued for 15s before being transferred to a heating table for annealing treatment at 100℃ for 30min, to obtain the Perovskite layer.

[0093] S4. Preparing a 30nm PCBM layer on the Perovskite layer prepared in S3: 60 microliters of 20mg / mL PCBM solution was coated on the Perovskite layer, and spin-coated at a speed of 2000rpm for 30s, to obtain the PCBM layer.

[0094] S5. Preparing a BCP layer and an Ag electrode on the PCBM layer prepared in S4 in sequence: a 8nm BCP layer and a 100nm Ag electrode were prepared in sequence by using a thermal evaporation deposition method.

[0095] Example 4

[0096] A Perovskite photovoltaic device based on conductive adhesive bonding of ITO / Me-4PACz / PTH / Perovskite / PCBM / BCP / Ag inverted structure, comprising an ITO substrate, a Me-4PACz layer, a PTH layer, a Perovskite layer, a PCBM layer, a BCP layer and an Ag electrode arranged in sequence on one side of the ITO substrate, and being prepared by the following method:

[0097] S1. Preparing a 10nm Me-4PACz layer on an ITO substrate: 0.5mg Me-4PACz was dissolved in 1mL ethanol to obtain a Me-4PACz solution; the ITO substrate was cleaned with deionized water and ethanol repeatedly for three times, and then baked for 20min to completely remove the solvent and moisture, and treated with ultraviolet light and ozone for 25min, 70 microliters of the Me-4PACz solution was coated, and the Me-4PACz solution was spin-coated on the ITO substrate at a speed of 3000rpm for 30s, and annealed at 100℃ for 10min, to obtain the Me-4PACz layer.

[0098] S2. Preparing a 30nm PTH layer on the Me-4PACz layer prepared in S1: PTH was dissolved in NMP, and stirred at 60℃ for 1h to prepare a PTH solution with a concentration of 0.1mg / mL; 30 microliters of the PTH solution was added dropwise on the Me-4PACz layer, and spin-coated at 4000rpm for 30s, and annealed at 100℃ for 5min, to obtain the PTH layer.

[0099] S3. Preparing a 500nm Perovskite layer on the PTH layer prepared in S2: 70 microliters of perovskite solution was coated on the PTH layer, and spin-coated at a speed of 6000 rpm, 200μL of CB was added at the 25th second after the spin-coating started, and the spin-coating was continued for 15 seconds before being transferred to a heating table for annealing treatment at 100℃ for 30 minutes, to obtain a Perovskite layer.

[0100] S4. Preparing a 30nm PCBM layer on the Perovskite layer prepared in S3: 60 microliters of 20mg / mL PCBM solution was coated on the Perovskite layer, and spin-coated at a speed of 2000 rpm for 30 seconds, to obtain a PCBM layer.

[0101] S5. Preparing a BCP layer and an Ag electrode on the PCBM layer prepared in S4 in sequence: a 8nm BCP layer and a 100nm Ag electrode were prepared in sequence by using a thermal evaporation deposition method.

[0102] Comparative Example 1

[0103] A perovskite photovoltaic device of ITO / MeO-2PACz / Perovskite / PCBM / BCP / Ag inverted structure, comprising an ITO substrate, a MeO-2PACz layer, a Perovskite layer, a PCBM layer, a BCP layer and an Ag electrode arranged in sequence on one side of the ITO substrate, and being prepared by the following method:

[0104] S1. Preparing a MeO-2PACz layer on an ITO substrate: MeO-2PACz was dissolved in ethanol to obtain a MeO-2PACz solution; the ITO substrate was cleaned with deionized water and ethanol repeatedly for three times, and then baked for 20 minutes to completely remove the solvent and moisture, and treated with ultraviolet light and ozone for 25 minutes, 70 microliters of the MeO-2PACz solution was coated, and the MeO-2PACz solution was spin-coated on the ITO substrate at a speed of 3000 rpm for 30 seconds, and annealed at 100℃ for 10 minutes, to obtain a MeO-2PACz layer.

[0105] S2. Preparing a Perovskite layer on the MeO-2PACz layer prepared in S1: 70 microliters of perovskite solution was coated on the MeO-2PACz layer, and spin-coated at a speed of 6000 rpm, 200μL of CB was added at the 25th second after the spin-coating started, and the spin-coating was continued for 15 seconds before being transferred to a heating table for annealing treatment at 100℃ for 30 minutes, to obtain a Perovskite layer.

[0106] S3. Preparing PCBM layer on the Perovskite layer: 60 microliters of PCBM solution was placed on the Perovskite layer and spin-coated at a speed of 2000 rpm for 30 seconds to obtain the PCBM layer.

[0107] S4. Preparing BCP layer and Ag electrode on the PCBM layer: 8 nm of BCP layer and 100 nm of Ag electrode were prepared in sequence by using the thermal evaporation deposition method.

[0108] The performance of the perovskite photovoltaic devices of Example 1 and Comparative Example 1 was tested. The current density-voltage (J-V) curves of the perovskite photovoltaic devices were tested under AM 1.5G illumination (100 mW / cm 2 ) using a programmable Keithley 2400 source. The driving level capacitance analysis (DLCP) test was performed using a Keithley 4200SCS and a probe station. The external quantum efficiency (EQE) was measured using a system consisting of a xenon lamp, a monochromator, a chopper, a lock-in amplifier and a calibrated silicon photodetector.

[0109] Figure 1 The schematic diagram of the perovskite photovoltaic device structure of Example 1 and the schematic diagram of the conductive adhesive bonding mechanism. The incorporation of conductive adhesive molecules plays an important role in optimizing the interface contact between the perovskite layer and the self-assembled monolayer. The combination between the conductive adhesive molecules and the perovskite improves the interface bonding with the self-assembled monolayer, while the π-π interaction between the conductive adhesive molecules and the self-assembled monolayer promotes the charge transport.

[0110] Figure 2 The DLCP curve of the perovskite photovoltaic devices of Example 1 and Comparative Example 1. It can be seen from Figure 2 that the DLCP curves of the untreated perovskite photovoltaic device of Comparative Example 1 and the conductive adhesive treated perovskite photovoltaic device of Example 1 have considerable overlap on the left side (representing the upper interface defects), indicating that the conductive adhesive treatment has little effect on the upper interface defects. However, the curve corresponding to the conductive adhesive treated photovoltaic device is significantly lower than that of the untreated photovoltaic device on the right side, indicating that the conductive adhesive treatment reduces the buried bottom interface defect density, thereby improving the buried bottom interface quality.

[0111] Figure 3 The conductivity test curve of the perovskite photovoltaic devices of Example 1 and Comparative Example 1. It can be seen from Figure 3 that the conductivity of the hole transport layer after conductive adhesive treatment is significantly improved, indicating that the modification of the interface with conductive adhesive is more conducive to promoting the hole migration of the buried bottom interface.

[0112] Figure 4 The J-V test curve of the perovskite photovoltaic devices of Examples 1-4 and Comparative Example 1 under AM 1.5G sunlight, from whichFigure 4 As can be seen from Table 1, the highest PCE of the untreated perovskite photovoltaic device of Comparative Example 1 and the conductive paste treated perovskite photovoltaic device of Example 1 reached 20.59% and 25.59% respectively, and the optimized photovoltaic device performance was significantly improved. At the same time, the PCE of 25.59% is one of the highest efficiencies of inverted structure perovskite photovoltaic devices reported to date.

[0113] Figure 5 For the EQE and integrated current curves of the perovskite photovoltaic devices of Example 1 and Comparative Example 1, from Figure 5 As can be seen from Table 2, the integrated current density of the untreated perovskite photovoltaic device of Comparative Example 1 was 23.91 mA / cm 2 , while the integrated current density of the conductive paste treated perovskite photovoltaic device of Example 1 was increased to 24.43 mA / cm 2 At the same time, the improvement of EQE brought higher actual device current density.

[0114] Figure 6 For the PCE decay curves of the perovskite photovoltaic devices of Example 1 and Comparative Example 1 under air conditions and light-emitting diode illumination, from Figure 6 As can be seen from Table 3, after 1200 hours of aging, the untreated perovskite photovoltaic device of Comparative Example 1 showed rapid degradation, and the efficiency decreased to 76.4% of the original after 1200 hours. In contrast, the conductive paste treated perovskite photovoltaic device of Example 1 maintained 97.3% of the original efficiency at the same time, which indicated that the conductive paste treated perovskite photovoltaic device showed more excellent stability.

[0115] Obviously, the above embodiments of the present application are only examples for clearly illustrating the present application, and are not intended to limit the embodiments of the present application. Those skilled in the art should understand that on the basis of the above description, other different forms of changes or variations can also be made. Here, it is not necessary and impossible to exhaust all the embodiments. Any modification, equivalent replacement and improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the claims of the present application.

Claims

1. A perovskite photovoltaic device based on conductive adhesive bonding, characterized in that, The device comprises an anode substrate, a self-assembled monolayer, a conductive glue layer, a perovskite layer, an electron transport layer, a hole blocking layer and a cathode electrode arranged in sequence on one side of the anode substrate, the material of the conductive glue layer is selected from one or more of polyaniline, polythiophene, polypyrrole and polyacetylene, and the material of the self-assembled monolayer is selected from one or more of 2-phenylcarbazole ethyl phosphonic acid, (2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl) phosphonic acid, (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl) phosphonic acid and 4-(3,6-dimethoxycarbazole-9-yl) butyl phosphonic acid.

2. The perovskite photovoltaic device of claim 1, wherein, The molecular weight of the material of the conductive glue layer is 50000-60000 Da.

3. A method for producing a perovskite photovoltaic device based on conductive adhesive bonding according to any one of claims 1 to 2, characterized by, The device comprises the following steps: S1. Preparing a self-assembled monolayer on an anode substrate; S2. Preparing a conductive glue layer on the self-assembled monolayer prepared in S1; S3. Preparing a perovskite layer on the conductive glue layer prepared in S2; S4. Preparing an electron transport layer on the perovskite layer prepared in S3; S5. Preparing a hole blocking layer and a cathode electrode in sequence on the electron transport layer prepared in S4 to obtain the perovskite photovoltaic device based on conductive glue adhesion.

4. The production method according to claim 3, characterized by, In step S1, the preparation of the self-assembled monolayer comprises the following steps: spin coating a self-assembled monomolecular solution on the anode substrate at 2500-3500 rpm, and then annealing at 90-110℃ to obtain the self-assembled monolayer.

5. The production method according to claim 3, characterized by, In step S2, the preparation of the conductive glue layer comprises the following steps: Dissolving the conductive glue in an organic solvent to obtain a conductive glue solution, and coating the conductive glue solution on the self-assembled monolayer.

6. The production method according to claim 5, characterized by The concentration of the conductive glue in the conductive glue solution is 0.05-0.5 mg / mL.

7. The preparation method according to claim 5, characterized in that, In step S2, spin coating the conductive glue solution on the self-assembled monolayer, and then annealing to obtain the conductive glue layer.

8. The production method according to claim 7, characterized by, The spin coating speed is 3500-4500 rpm, and the spin coating time is 15-30 s.

9. The production method according to claim 7, characterized by, The annealing temperature is 90-110℃.

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