Silicon photonic structure and manufacturing method thereof
By designing the substrate of the ladder structure in the silicon optical structure and the waveguide located on the wider surface, combining the etching process to reduce the distance between the waveguide and the fiber device, the problem of large light signal loss is solved, and the more efficient light is achieved. Signal transmission.
Patent Information
- Application Number
- CN202310881244.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-18
- Publication Date
- 2025-01-21
AI Technical Summary
In existing silicon photonic products, the distance between the waveguide and the optical fiber device is large, resulting in large loss of optical signal, making it difficult to effectively narrow this distance.
A silicon photonic structure is designed, in which the substrate has a ladder structure and the waveguide is located on the wider first side. Openings are formed through an etching process to reduce the width of the substrate, thereby reducing the distance between the waveguide and the optical fiber device.
Effectively reduced the distance between waveguide and fiber device, reduced the loss of light signals, and achieved the required specifications of silicon optical devices through the etching process.
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Figure CN119335651A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a silicon photonics product and a manufacturing method thereof, and in particular to a silicon photonics structure and a manufacturing method thereof. Background Art
[0002] In current silicon photonics products, the closer the distance between the waveguide and the optical fiber device, the less the loss of the optical signal. Therefore, how to effectively reduce the distance between the waveguide and the optical fiber device is a goal of continuous efforts. Summary of the invention
[0003] The present invention provides a silicon photonic structure and a manufacturing method thereof, which can effectively reduce the distance between a waveguide and an optical fiber device.
[0004] The present invention provides a silicon photonic structure, including a silicon photonic device. The silicon photonic device includes a substrate and a waveguide. The substrate has a first surface and a second surface opposite to each other. The width of the first surface is greater than the width of the second surface. The substrate includes a stepped structure. The waveguide is located on the first surface.
[0005] According to an embodiment of the present invention, in the silicon photonic structure, the step structure may include a first step, a second step and a third step. The first step may be adjacent to the first surface. The third step may be adjacent to the second surface. The second step may be located between the first step and the third step.
[0006] According to an embodiment of the present invention, in the silicon photonic structure, the first step may include a first sidewall and a first step surface. The first sidewall may be connected to the first surface. The first step surface may be connected to the first sidewall. The second step may include a second sidewall and a second step surface. The second sidewall may be connected to the first step surface. The second step surface may be connected to the second sidewall. The third step may include a third sidewall and a third step surface. The third sidewall may be connected to the second step surface. The third step surface may be connected to the third sidewall.
[0007] According to an embodiment of the present invention, in the silicon photonic structure, the width of the third step surface may be greater than the width of the second step surface, and the width of the second step surface may be greater than the width of the first step surface.
[0008] According to an embodiment of the present invention, in the silicon photonic structure, the height of the second sidewall may be greater than the height of the first sidewall, and the height of the first sidewall may be greater than the height of the third sidewall.
[0009] According to an embodiment of the present invention, the silicon photonic structure may further include an optical fiber device, which is located on one side of the waveguide and one side of the first stage.
[0010] According to an embodiment of the present invention, in the silicon photonic structure, the optical fiber device may include an optical fiber array.
[0011] According to an embodiment of the present invention, the silicon photonic structure may further include an adhesive layer, and the adhesive layer is located between the first stage and the optical fiber device.
[0012] According to an embodiment of the present invention, in the above silicon photonic structure, the silicon photonic device may further include an insulating layer and a cladding layer. The insulating layer is located between the waveguide and the substrate. The cladding layer is located on the waveguide and the insulating layer.
[0013] The present invention provides a method for manufacturing a silicon photonic structure, comprising the following steps. A silicon photonic device layer is provided. The silicon photonic device layer comprises a substrate layer and a waveguide. The substrate layer has a first surface and a second surface opposite to each other. The waveguide is located on the first surface of the substrate layer. A first patterned photoresist layer is formed on the first surface. The first patterned photoresist layer is used as a mask to perform a first etching process on the first surface, thereby forming a first opening in the substrate layer. The first patterned photoresist layer is removed. A second patterned photoresist layer is formed on the second surface. The second patterned photoresist layer is used as a mask to perform a second etching process on the second surface, thereby forming a second opening in the substrate layer. The second patterned photoresist layer is removed. A cutting process is performed on the substrate layer exposed by the second opening using a cutting knife, thereby forming a third opening in the substrate layer and forming a silicon photonic device. The third opening is connected to the first opening to cut the substrate layer into a substrate. The silicon photonic device comprises a substrate and a waveguide. The substrate has a first surface and a second surface. The substrate comprises a stepped structure. The waveguide is located on the first surface of the substrate.
[0014] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the first etching process is, for example, a dry etching process.
[0015] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the second etching process is, for example, a dry etching process or a wet etching process.
[0016] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the width of the second opening may be greater than the width of the third opening. The width of the third opening may be greater than the width of the first opening.
[0017] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the depth of the third opening may be greater than the depth of the first opening. The depth of the first opening may be greater than the depth of the second opening.
[0018] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the silicon photonic device may further include an insulating layer and a cladding layer. The insulating layer is located between the waveguide and the substrate. The cladding layer is located on the waveguide and the insulating layer.
[0019] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the silicon photonic device layer may further include an insulating material layer and a cladding material layer. The insulating material layer is located between the waveguide and the substrate layer. The cladding material layer is located on the waveguide and the insulating material layer.
[0020] According to an embodiment of the present invention, the method for manufacturing the silicon photonic structure may further include the following steps: performing a first etching process on the cladding material layer to form a cladding layer.
[0021] According to an embodiment of the present invention, the method for manufacturing the silicon photonic structure may further include the following steps: performing a first etching process on the insulating material layer to form an insulating layer.
[0022] According to an embodiment of the present invention, in the method for manufacturing the silicon photonic structure, the step structure may include a first step, a second step, and a third step. The first step may be adjacent to the first surface. The third step may be adjacent to the second surface. The second step may be located between the first step and the third step. The width of the first surface may be greater than the width of the second surface.
[0023] According to an embodiment of the present invention, the method for manufacturing the silicon photonic structure may further include the following steps: Connecting the optical fiber device to the first stage through an adhesive layer.
[0024] Based on the above, in the silicon photonic structure proposed in the present invention, the silicon photonic device includes a substrate and a waveguide, the substrate has a first surface and a second surface opposite to each other, wherein the width of the first surface is greater than the width of the second surface, and the substrate includes a stepped structure. Since the waveguide is located on the first surface with a larger width, the distance between the waveguide and the optical fiber device can be effectively reduced, thereby reducing the loss of the optical signal. In addition, in the manufacturing method of the silicon photonic structure proposed in the present invention, a first etching process is used to form a first opening, thereby accurately forming a first opening with the required specifications, and effectively reducing the distance between the waveguide and the optical fiber device, thereby reducing the loss of the optical signal. In addition, in the manufacturing method of the silicon photonic structure proposed in the present invention, a second etching process is used to form a second opening, thereby accurately forming a second opening with the required specifications, and the second opening can be used as a cutting mark to facilitate subsequent cutting processes.
[0025] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below with reference to the accompanying drawings for detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] Figures 1A to 1E 2 is a cross-sectional view of the manufacturing process of the silicon photonic structure according to some embodiments of the present invention.
[0027] Description of Figure Numbers:
[0028] 10: Silicon Photonic Structure
[0029] 100:Silicon photonic device layer
[0030] 100a: Silicon Photonics Devices
[0031] 102: substrate layer
[0032] 102a: Substrate
[0033] 104: Waveguide
[0034] 106: Insulation material layer
[0035] 106a: Insulation layer
[0036] 108: coating material layer
[0037] 108a: coating layer
[0038] 110: first patterned photoresist layer
[0039] 112: second patterned photoresist layer
[0040] 114: Fiber Optic Devices
[0041] 116: Adhesive layer
[0042] 200: Cutting knife
[0043] D1,D2,D3: Depth
[0044] E1: First etching process
[0045] E2: Second etching process
[0046] H1,H2,H3: Height
[0047] OP1: First opening
[0048] OP2: Second opening
[0049] OP3: Second opening
[0050] S1: Side 1
[0051] S2: Side 2
[0052] SS1: Step structure
[0053] ST1: First stage
[0054] ST2: Second stage
[0055] ST3: Stage 3
[0056] SW1: First side wall
[0057] SW2: Second side wall
[0058] SW3: Third side wall
[0059] T1: First order surface
[0060] T2: Second order surface
[0061] T3: The third step
[0062] W1,W2,W3,W4,W5,W6,W7: Width DETAILED DESCRIPTION
[0063] The following examples are listed and described in detail with reference to the accompanying drawings, but the examples provided are not intended to limit the scope of the present invention. For ease of understanding, the same components will be described with the same symbols in the following description. In addition, the drawings are for illustrative purposes only and are not drawn to their original size. In fact, the size of various features may be increased or decreased arbitrarily for the sake of clarity.
[0064] Figures 1A to 1E 4 is a cross-sectional view of the manufacturing process of a silicon photonic structure according to some embodiments of the present invention.
[0065] Please refer to Figure 1A , providing a silicon photonic device layer 100. The silicon photonic device layer 100 includes a substrate layer 102 and a waveguide 104. The substrate layer 102 has a first surface S1 and a second surface S2 opposite to each other. In some embodiments, the material of the substrate layer 102 may be a semiconductor material, such as silicon. The waveguide 104 is located on the first surface S1 of the substrate layer 102. The waveguide 104 can be used as an optical waveguide. In some embodiments, the material of the waveguide 104 may be a semiconductor material, such as silicon.
[0066] The silicon photonic device layer 100 may further include at least one of an insulating material layer 106 and a cladding material layer 108. The insulating material layer 106 is located between the waveguide 104 and the substrate layer 102. In some embodiments, the insulating material layer 106 may be a buried oxide layer. In some embodiments, the material of the insulating material layer 106 is, for example, silicon oxide. The cladding material layer 108 is located on the waveguide 104 and the insulating material layer 106. In some embodiments, the material of the cladding material layer 108 is, for example, silicon oxide.
[0067] Please refer to Figure 1B , a first patterned photoresist layer 110 is formed on the first surface S1. In some embodiments, the first patterned photoresist layer 110 may be formed on the cladding material layer 108. In some embodiments, the first patterned photoresist layer 110 may be formed by a photolithography process.
[0068] Next, using the first patterned photoresist layer 110 as a mask, a first etching process E1 is performed on the first surface S1 to form a first opening OP1 in the substrate layer 102. In some embodiments, the first etching process E1 can be performed on the coating material layer 108 to form a coating layer 108a. In some embodiments, the first etching process E1 can be performed on the insulating material layer 106 to form an insulating layer 106a. In some embodiments, the first etching process E1 is, for example, a dry etching process (e.g., inductively coupled plasma (ICP) etching). In some embodiments, the width W1 of the first opening OP1 is, for example, 10 micrometers (μm) to 20 micrometers, and the depth D1 of the first opening OP1 is, for example, 100 micrometers to 150 micrometers.
[0069] Please refer to Figure 1C , remove the first patterned photoresist layer 110. In some embodiments, the first patterned photoresist layer 110 is removed by, for example, dry stripping or wet stripping.
[0070] Next, a second patterned photoresist layer 112 is formed on the second surface S2. In some embodiments, the second patterned photoresist layer 112 may be formed by a photolithography process.
[0071] Then, the second surface S2 is subjected to a second etching process E2 using the second patterned photoresist layer 112 as a mask to form a second opening OP2 in the substrate layer 102. In some embodiments, the second etching process E2 is, for example, a dry etching process (eg, inductively coupled plasma etching) or a wet etching process.
[0072] In some embodiments, the width W2 of the second opening OP2 may be greater than the width W1 of the first opening OP1. In some embodiments, the depth D1 of the first opening OP1 may be greater than the depth D2 of the second opening OP2. In some embodiments, the width W2 of the second opening OP2 is, for example, 80 micrometers to 100 micrometers, and the depth D2 of the second opening OP2 is, for example, 5 micrometers to 10 micrometers.
[0073] Please refer to Figure 1D , remove the second patterned photoresist layer 112. In some embodiments, the second patterned photoresist layer 112 is removed by, for example, a dry stripping method or a wet stripping method.
[0074] Next, the substrate layer 102 exposed by the second opening OP2 is cut by a cutting knife 200 to form a third opening OP3 in the substrate layer 102 and form a silicon photonic device 100a. The third opening OP3 is connected to the first opening OP1 to cut the substrate layer 102 into a substrate 102a. In some embodiments, the material of the cutting knife 200 may include diamond or metal.
[0075] In some embodiments, the width W2 of the second opening OP2 may be greater than the width W3 of the third opening OP3, and the width W3 of the third opening OP3 may be greater than the width W1 of the first opening OP1. In some embodiments, the depth D3 of the third opening OP3 may be greater than the depth D1 of the first opening OP1. Figure 1C In some embodiments, the width W3 of the third opening OP3 is, for example, 45 micrometers to 50 micrometers, and the depth D3 of the third opening OP3 is, for example, 610 micrometers to 630 micrometers.
[0076] The silicon photonic device 100a includes a substrate 102a and a waveguide 104. The substrate 102a has a first surface S1 and a second surface S2. The width W4 of the first surface S1 of the substrate 102a may be greater than the width W5 of the second surface S2 of the substrate 102a. In some embodiments, the substrate 102a may be a semiconductor substrate, such as a silicon substrate.
[0077] The substrate 102a includes a step structure SS1. The step structure SS1 may include a first step ST1, a second step ST2, and a third step ST3. The first step ST1 may be adjacent to the first surface S1. The third step ST3 may be adjacent to the second surface S2. The second step ST2 may be located between the first step ST1 and the third step ST3. The first step ST1 may include a first sidewall SW1 and a first step surface T1. The first sidewall SW1 may be connected to the first surface S1. The first step surface T1 may be connected to the first sidewall SW1. The second step ST2 may include a second sidewall SW2 and a second step surface T2. The second sidewall SW2 may be connected to the first step surface T1. The second step surface T2 may be connected to the second sidewall SW2. The third step ST3 may include a third sidewall SW3 and a third step surface T3. The third sidewall SW3 may be connected to the second step surface T2. The third step surface T3 may be connected to the third sidewall SW3. In some embodiments, the second surface S2 may serve as the third step surface T3.
[0078] In some embodiments, the width W5 of the third step surface T3 may be greater than the width W7 of the second step surface T2, and the width W7 of the second step surface T2 may be greater than the width W6 of the first step surface T1. In some embodiments, the width W6 of the first step surface T1 may be 17 micrometers to 20 micrometers, and the width W7 of the second step surface T2 may be 17.5 micrometers to 27.5 micrometers. In some embodiments, the height H2 of the second sidewall SW2 may be greater than the height H1 of the first sidewall SW1, and the height H1 of the first sidewall SW1 may be greater than the height H3 of the third sidewall SW3.
[0079] The waveguide 104 is located on the first surface S1 of the substrate 102a. Since the waveguide 104 is located on the first surface S1 having a larger width, the distance between the waveguide 104 and the optical fiber device 114 ( Figure 1E ) to reduce the loss of optical signals.
[0080] The silicon photonic device 100a may further include at least one of an insulating layer 106a and a cladding layer 108a. The insulating layer 106a is located between the waveguide 104 and the substrate 102a. In some embodiments, the material of the insulating layer 106a is, for example, silicon oxide. The cladding layer 108a is located on the waveguide 104 and the insulating layer 106a. In some embodiments, the material of the cladding layer 108a is, for example, silicon oxide.
[0081] Please refer to Figure 1E , the optical fiber device 114 can be connected to the first stage ST1 through the adhesive layer 116. That is, the adhesive layer 116 can be located between the optical fiber device 114 and the first stage ST1. In some embodiments, the adhesive layer 116 can also be located between the optical fiber device 114 and the insulating layer 106a. In some embodiments, the adhesive layer 116 can also be located between the optical fiber device 114 and the cladding layer 108a. In some embodiments, the optical fiber device 114 may include an optical fiber array. In some embodiments, in some embodiments, the adhesive layer 116 can be a UV glue.
[0082] Below, through Figure 1E In order to explain the silicon photonic structure 10 of the above embodiment. In addition, although the method of forming the silicon photonic structure 10 is described by taking the above method as an example, the present invention is not limited thereto.
[0083] Please refer to Figure 1E, the silicon photonic structure 10 includes a silicon photonic device 100a. The silicon photonic device 100a includes a substrate 102a and a waveguide 104. The substrate 102a has a first surface S1 and a second surface S2 opposite to each other. The width W4 of the first surface S1 is greater than the width W5 of the second surface S2. The substrate 102a includes a step structure SS1. The waveguide 104 is located on the first surface S1. In some embodiments, the silicon photonic device 100a may further include at least one of an insulating layer 106a and a cladding layer 108a. The insulating layer 106a is located between the waveguide 104 and the substrate 102a. The cladding layer 108a is located on the waveguide 104 and the insulating layer 106a. In addition, although not shown in the figure, a circuit structure may be provided on the insulating layer 106a, and optical and electrical signals may be transmitted between the circuit structure and the waveguide 104.
[0084] In some embodiments, the silicon photonic structure 10 may further include an optical fiber device 114. The optical fiber device 114 is located on one side of the waveguide 104 and one side of the first stage ST1. In some embodiments, the silicon photonic structure 10 may further include an adhesive layer 116. The adhesive layer 116 is located between the first stage ST1 and the optical fiber device 114.
[0085] In addition, the details of each component in the silicon photonic structure 10 (eg, material, configuration, formation method and function, etc.) have been described in detail in the above embodiments and will not be described again here.
[0086] Based on the above embodiments, it can be known that in the silicon photonic structure 10, the silicon photonic device 100a includes a substrate 102a and a waveguide 104, the substrate 102a has a first surface S1 and a second surface S2 opposite to each other, wherein the width W4 of the first surface S1 is greater than the width W5 of the second surface S2, and the substrate 102a includes a step structure SS1. Since the waveguide 104 is located on the first surface S1 having a larger width, the distance between the waveguide 104 and the optical fiber device 114 can be effectively reduced, thereby reducing the loss of the optical signal. In addition, in the manufacturing method of the silicon photonic structure 10, the first opening OP1 is formed by using the first etching process E1, thereby accurately forming the first opening OP1 with the required specifications, and effectively reducing the distance between the waveguide 104 and the optical fiber device 114, thereby reducing the loss of the optical signal. In addition, in the method for manufacturing the silicon photonic structure 10 , the second etching process E2 is used to form the second opening OP2 , thereby accurately forming the second opening OP2 with required specifications, and the second opening OP2 can be used as a cutting mark to facilitate subsequent cutting processes.
[0087] In summary, in the silicon photonic structure of the above embodiment, the waveguide is located on the wider surface of the substrate, so the distance between the waveguide and the optical fiber device can be effectively reduced, thereby reducing the loss of the optical signal. In addition, in the method for manufacturing the silicon photonic structure of the above embodiment, the silicon photonic device of the required specifications can be obtained by etching process, so the distance between the waveguide and the optical fiber device can be effectively reduced, thereby reducing the loss of the optical signal. In addition, in the method for manufacturing the silicon photonic structure of the above embodiment, the cutting mark with the required specifications can be obtained by etching process to facilitate the subsequent cutting process.
[0088] Although the present invention has been disclosed as above by embodiments, it is not intended to limit the present invention. Any person skilled in the art may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be based on the definition of the claims.
Claims
1. A silicon photonic structure, characterized in that: Comprising a silicon photonic device, wherein the silicon photonic device comprises: A substrate having a first surface and a second surface opposite to each other, wherein a width of the first surface is greater than a width of the second surface, and the substrate comprises a stepped structure; and The waveguide is located on the first surface.
2. The silicon photonic structure according to claim 1, characterized in that: The ladder structure includes a first step, a second step and a third step, The first step is adjacent to the first face, The third step is adjacent to the second surface, and The second stage is located between the first stage and the third stage.
3. The silicon photonic structure according to claim 2, characterized in that: The first step includes a first side wall and a first step surface, The first side wall is connected to the first surface, The first step surface is connected to the first side wall, The second step includes a second sidewall and a second step surface, The second side wall is connected to the first step surface, The second step surface is connected to the second side wall, The third step includes a third side wall and a third step surface, The third side wall is connected to the second step surface, and The third step surface is connected to the third side wall.
4. The silicon photonic structure according to claim 3, characterized in that: The width of the third step surface is greater than the width of the second step surface, and The width of the second step surface is greater than the width of the first step surface.
5. The silicon photonic structure according to claim 3, characterized in that: The height of the second side wall is greater than the height of the first side wall, and The height of the first side wall is greater than the height of the third side wall.
6. The silicon photonic structure according to claim 2, characterized in that: Also includes: The optical fiber device is located on one side of the waveguide and one side of the first stage.
7. The silicon photonic structure according to claim 6, characterized in that: The optical fiber device includes an optical fiber array.
8. The silicon photonic structure according to claim 6, characterized in that: Also includes: An adhesive layer is located between the first stage and the optical fiber component.
9. The silicon photonic structure according to claim 1, characterized in that: The silicon photonic device further comprises: an insulating layer located between the waveguide and the substrate; and The cladding layer is located on the waveguide and the insulating layer.
10. A method for manufacturing a silicon photonic structure, characterized in that: include: A silicon photonic device layer is provided, wherein the silicon photonic device layer comprises: a substrate layer having a first surface and a second surface opposite to each other; and a waveguide located on the first surface of the substrate layer; forming a first patterned photoresist layer on the first surface; Using the first patterned photoresist layer as a mask, performing a first etching process on the first surface to form a first opening in the substrate layer; removing the first patterned photoresist layer; forming a second patterned photoresist layer on the second surface; Using the second patterned photoresist layer as a mask, performing a second etching process on the second surface to form a second opening in the substrate layer; removing the second patterned photoresist layer; and The substrate layer exposed by the second opening is cut by a cutting knife to form a third opening in the substrate layer and a silicon photonic device, wherein the third opening is connected to the first opening to cut the substrate layer into a substrate, and the silicon photonic device comprises: The substrate has the first surface and the second surface and includes a stepped structure; and The waveguide is located on the first surface of the substrate.
11. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The first etching process includes a dry etching process.
12. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The second etching process includes a dry etching process or a wet etching process.
13. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The width of the second opening is greater than the width of the third opening, and A width of the third opening is greater than a width of the first opening.
14. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The depth of the third opening is greater than the depth of the first opening, and The depth of the first opening is greater than the depth of the second opening.
15. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The silicon photonic device further comprises: an insulating layer located between the waveguide and the substrate; and The cladding layer is located on the waveguide and the insulating layer.
16. The method for manufacturing a silicon photonic structure according to claim 15, characterized in that: The silicon photonic device layer further comprises: a layer of insulating material located between the waveguide and the substrate layer; and The cladding material layer is located on the waveguide and the insulating material layer.
17. The method for manufacturing a silicon photonic structure according to claim 16, characterized in that: Also includes: The first etching process is performed on the cladding material layer to form the cladding layer.
18. The method for manufacturing a silicon photonic structure according to claim 16, characterized in that: Also includes: The first etching process is performed on the insulating material layer to form the insulating layer.
19. The method for manufacturing a silicon photonic structure according to claim 10, characterized in that: The ladder structure includes a first step, a second step and a third step, The first step is adjacent to the first face, The third step is adjacent to the second surface, The second stage is located between the first stage and the third stage, and The width of the first surface is greater than the width of the second surface.
20. The method for manufacturing a silicon photonic structure according to claim 19, characterized in that: Also includes: The optical fiber device is connected to the first stage through an adhesive layer.