Band-gap reference circuit, control method, chip and electronic equipment

By setting a high -voltage module in the biasm circuit and band gap benchmark voltage of the band -reference circuit to ensure that the voltage of the transistor unit is within the resistance range of the voltage, the problem of damage to the device in the high voltage source domain, and the stability has been achieved. Bar gap base voltage output.

CN119336116APending Publication Date: 2025-01-21CHIPSEA TECH SHENZHEN CO LTD +1
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Patent Information

Application Number
CN202411229216.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-09-03
Publication Date
2025-01-21

AI Technical Summary

Technical Problem

The existing bandgap reference circuits are prone to cause the device voltage drop to be too high and damaged in the high voltage power domain, and the inability to output a stable reference voltage, affecting the normal operation of the system.

Method used

Design a type of band -based circuit, including the bias circuit and the band gap benchmark voltage generated sub -circuit. By setting up the first high -voltage module in the biason circuit, and setting the second high -voltage module in the band -reference voltage generated subcarring circuit The end-end voltage of the transistor unit is within the range of resistance.

Benefits of technology

This enables the benchmark circuit to work properly in the high -voltage source domain, provides a stable band benchmark voltage, reduces the probability of device damage, and improves the reliability of the system.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a band-gap reference circuit, a control method, a chip and electronic equipment, and belongs to the technical field of electronics. The band-gap reference circuit comprises a bias sub-circuit and a band-gap reference voltage generation sub-circuit, the bias sub-circuit comprises a first high-voltage module and a plurality of first transistor units, and the band-gap reference voltage generation sub-circuit comprises a second high-voltage module and a plurality of second transistor units; the first high-voltage module is used for providing a plurality of first voltages, and the first voltages are used for ensuring that the first end-second end voltage of the first transistor unit is smaller than a first threshold value; the second high-voltage module is used for providing a plurality of second voltages, and the second voltages are used for guaranteeing that the first end-second end voltage of the second transistor unit is smaller than a second threshold value. According to the invention, band-gap reference voltage can be provided in a high-voltage power supply domain.
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Citation Information

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