Controllable etching processing device and method for nanopore / linear array

Abstract

The invention discloses a controllable etching processing device and method for a nanopore / linear array, and relates to the technical field of semiconductor processing. A metal mask containing magnetic components is arranged on the surface of a device to be machined. The machining device comprises an etching container, a magnetic field generating device, a rotating base table and a center control device. A sample container for bearing a to-be-processed device is arranged at the bottom of the etching container, and the etching solution etches the to-be-processed device under the catalytic action of the metal mask; the magnetic field generating device comprises an electromagnet arranged under the sample container; the rotating base station is provided with a plurality of push rods abutting against the electromagnets; the central control device controls the magnetic field intensity of the electromagnet and controls the push rod to move to enable the electromagnet to rotate in the vertical direction so as to change the magnetic field direction; on the basis of metal auxiliary chemical etching, the metal mask is controlled to move along the preset track through the magnetic field, and smooth and straight nanopore or nanowire arrays with different tracks can be obtained through etching.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a nano-hole / wire array controllable etching processing device and method. Background Art

[0002] Silicon nanopores are a kind of micro-nanostructure on the silicon surface. Due to their extraordinary light trapping properties and subwavelength effects, they have great application prospects in solar cells, microelectronic devices, optoelectronic devices, microfluidic devices and sensors.

[0003] Metal-assisted chemical etching is a cost-effective, simple, large-scale wet etching method that does not require clean rooms. It has been widely used to form micro-nano structures on the surface of silicon wafers. The metal-assisted chemical etching method affects the etching morphology of the silicon nanopore structure by adjusting the component concentrations of each component of the etchant. The existing silicon nanopore etching method needs to adjust the different components of the etching solution according to different morphological requirements, which requires a lot of experimental basis and experience accumulation. It cannot quantify the parameters and guarantee the straight morphology. At the same time, slight disturbances in the environment during the etching process may also affect the final etching effect. In addition, traditional metal-assisted chemical etching can usually only achieve the etching of silicon nanopores in a specific direction, and cannot flexibly control the etching trajectory. Summary of the invention

[0004] The embodiment of the present invention provides a nano-hole / line array controllable etching processing device and method, which is intended to etch and prepare a nano-hole / line array with smooth side walls and controllable trajectory.

[0005] The nanopore / line array controllable etching processing device provided by the present invention is used for etching a device to be processed, the surface of the device to be processed is provided with a metal mask, the metal mask contains a magnetic component, and the processing device comprises:

[0006] An etching container for containing an etching solution; a sample container for carrying a device to be processed is fixed at the bottom of the etching container, and the etching solution is used to etch the device to be processed under the catalytic action of the metal mask;

[0007] A magnetic field generating device, comprising an electromagnet disposed outside the etching container and directly below the sample container;

[0008] A rotating base is arranged directly below the electromagnet; the rotating base is provided with a plurality of push rods abutting against the electromagnet;

[0009] The central control device is electrically connected to the magnetic field generating device and is used to control the magnetic field strength of the electromagnet; and is electrically connected to the rotating base and is used to control the movement of the plurality of push rods so that the electromagnet rotates in the vertical direction.

[0010] Optionally, the central control device is connected to the etching container and is used to control the etching container to rotate in a horizontal plane.

[0011] Optionally, the processing device further comprises a water bath device;

[0012] The water bath device is provided with a receiving cavity for containing water bath liquid, and the etching container is placed in the receiving cavity;

[0013] The central control device is electrically connected to the water bath device and is used to control the water bath temperature of the water bath device.

[0014] Optionally, the magnetic field generating device further includes a power supply, a push button switch and a fuse;

[0015] The power supply is used to supply power to the electromagnet; the button switch and the fuse are connected in series to the electrical connection path between the power supply and the electromagnet, the button switch is used to control the start and stop of the electromagnet, and the fuse is used for fuse protection.

[0016] The present invention provides a nanopore / line array controllable etching processing method, which uses the above-mentioned nanopore / line array controllable etching processing device, and the method comprises:

[0017] S1, preparing a metal mask on the surface of the device to be processed;

[0018] S2, according to the etching target and etching requirements, the etching solution is configured; the parameters of the magnetic field generating device and the rotating base are preset through the central control device;

[0019] S3, loading the device to be processed covered with the metal mask into the sample container, starting the magnetic field generating device and the rotating base, and injecting the etching solution into the etching container to etch the device to be processed.

[0020] Optionally, the metal mask includes a first metal layer, a second metal layer and a third metal layer;

[0021] The first metal layer and the third metal layer are used to catalyze the etching solution to etch the device to be processed;

[0022] The second metal layer is a magnetic metal.

[0023] Optionally, the step S1 specifically includes the following steps:

[0024] preparing a photoresist mask on the surface of the device to be processed;

[0025] The first metal layer, the second metal layer and the third metal layer are deposited in sequence.

[0026] Optionally, the step S1 specifically includes the following steps:

[0027] Spin-coat polystyrene beads on the surface of the device to be processed;

[0028] Reducing the diameter of the polystyrene spheres by reactive ion etching;

[0029] Depositing the first metal layer, the second metal layer and the third metal layer in sequence;

[0030] Remove the polystyrene beads.

[0031] Optionally, the material of the device to be processed is at least one of silicon, gallium arsenide, and silicon carbide.

[0032] The present invention also provides a semiconductor device, the semiconductor device comprising a nanohole array or a nanowire array;

[0033] The nanopore array or the nanowire array is prepared by the nanopore / wire array controllable etching processing device described above, or is prepared by the nanopore / wire array controllable etching processing method described above.

[0034] It can be seen from the above technical solutions that the present invention has the following beneficial effects:

[0035] The nanopore / wire array controllable etching processing device provided by the present invention utilizes a metal-assisted chemical etching method to etch a device to be processed to obtain nanopores / wires. During the etching process, an etching solution etches a channel downward from the surface of the device to be processed under the catalytic action of a metal mask. The present invention guides and constrains a metal mask containing a magnetic component to move along a predetermined trajectory through a magnetic field generated by an electromagnet, thereby obtaining smooth and straight nanopores / wires. The present invention can also control the intensity and direction of the magnetic field to change the movement trajectory of the metal mask, thereby achieving controllable angle etching, and can be used to prepare nanopores / wires with various trajectories. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0037] Figure 1 It is a structural schematic diagram of an embodiment of a nanopore / wire array controllable etching processing device of the present invention;

[0038] Figure 2 It is a schematic diagram of the structure of the push rod controlling the rotation of the electromagnet;

[0039] Figure 3It is a flowchart of embodiments 1-4 of the nanopore / wire array controllable etching processing method of the present invention;

[0040] Figure 4 Schematic diagram of the nanopore structure of Example 1 and Example 2 of the nanopore / line array controllable etching processing method of the present invention;

[0041] Figure 5 Schematic diagram of the nanowire structure of Example 3 and Example 4 of the nanohole / wire array controllable etching processing method of the present invention;

[0042] Figure 6 Schematic diagram of nanopore / wire array parameters of the present invention.

[0043] Description of Figure Numbers:

[0044] 1. Etching container; 2. Sample container; 3. Magnetic field generating device; 4. Rotating base; 5. Central control device; 6. Water bath device; 31. Electromagnet; 32. Push button switch; 33. Fuse; 41. Push rod;

[0045] 100, silicon substrate; 200, photoresist; 301, first layer of precious metal mask gold nanoparticles; 302, second layer of magnetic metal mask magnetic metal nanoparticles; 303, third layer of precious metal mask gold nanoparticles; 401, straight silicon nanopores; 402, bent silicon nanopores; 501, straight silicon nanowires; 502, bent silicon nanowires. DETAILED DESCRIPTION

[0046] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and drawings of the present application are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0048] Silicon is the most widely used solar cell substrate material, but due to the characteristics of single-crystal silicon materials, single-crystal silicon solar cells have high reflectivity and low theoretical conversion efficiency. Silicon nanopores are a type of silicon micro-nanostructure on the surface of silicon. Due to their extraordinary light trapping properties and sub-wavelength effects, they are used in silicon solar cells and have great application prospects in microelectronic devices, optoelectronic devices, microfluidic devices, sensors, etc.

[0049] Metal-assisted chemical etching is widely used to form micro-nano structures on the surface of silicon wafers. When there are holes in the hydrofluoric acid (HF) solution, silicon will be corroded by hydrofluoric acid, but the reaction of silicon in pure hydrofluoric acid is extremely slow. In order to increase the reaction rate and control the process, precious metals of specific shapes and positions are deposited on the surface of silicon. When the silicon covered with precious metals is immersed in a hydrofluoric acid-hydrogen peroxide solution, hydrogen peroxide (H2O2) is reduced to generate holes under the catalytic action of the precious metals. When there are a large number of holes in the hydrofluoric acid (HF) solution, silicon can be corroded quickly, and metal-assisted chemical etching occurs.

[0050] The traditional metal-assisted chemical etching method for preparing silicon nanostructures has a one-step method and a two-step method. The one-step method is to immerse the clean silicon wafer in an etching solution composed of hydrofluoric acid / silver nitrate / hydrogen peroxide to directly etch and prepare the silicon nanostructure; the two-step method is to first deposit a layer of precious metal film on the surface of the clean silicon wafer, and then immerse it in an etching solution composed of hydrofluoric acid and hydrogen peroxide (other organic solvents can be added if a bent structure is to be prepared). By controlling the shape and position of the precious metal film, silicon nanostructures of different shapes can be prepared, such as: a mesh precious metal film can be etched into a silicon nanowire structure, and discrete precious metal particles can be etched into a silicon nanopore structure.

[0051] In the two-step method, adjusting the different components of the etching solution according to different morphological requirements requires a lot of experimental basis and experience accumulation; for example, the concentration of the oxidant (usually hydrogen peroxide) in the etching solution is extremely important and directly affects the content of holes in the solution. Too high an oxidant concentration may lead to too many holes, which in turn makes the side walls of the pore structure rough and not straight, and the silicon surface morphology incomplete; at the same time, in conventional metal-assisted chemical etching, due to internal and external factors, it will be difficult for the precious metal catalyst to move along the ideal trajectory; therefore, how to constrain the movement of holes in the etching solution, that is, how to constrain the movement of the precious metal catalyst in the etching solution, is an urgent problem to be solved in the preparation of silicon nanopores and line arrays with smooth morphology and controllable trajectory.

[0052] The present invention proposes a nano-hole / line array controllable etching processing device, aiming to solve the above-mentioned problem.

[0053] See also Figure 1 and Figure 2 In one embodiment, the processing device provided by the present invention is used for etching a device to be processed, wherein a metal mask containing a magnetic component is provided on the surface of the device to be processed, and the processing device comprises:

[0054] The etching container 1 is used to contain the etching solution; a sample container 2 for carrying the device to be processed is fixed at the bottom of the etching container 1, and the etching solution is used to etch the device to be processed under the catalytic action of the metal mask;

[0055] The magnetic field generating device 3 comprises an electromagnet 31 which is arranged outside the etching container 1 and directly below the sample container 2;

[0056] The rotating base 4 is arranged directly below the electromagnet 31; the rotating base 4 is provided with a plurality of push rods 41 abutting against the electromagnet;

[0057] The central control device 5 is electrically connected to the magnetic field generating device 3 for controlling the magnetic field strength of the electromagnet 31 ; and is electrically connected to the rotating base 4 for controlling the movement of the plurality of push rods 41 so that the electromagnet 31 rotates in the vertical direction.

[0058] In this embodiment, the material of the device to be processed is a semiconductor material such as silicon, gallium arsenide, silicon carbide, etc.; according to the specific material of the device to be processed, a suitable etching solution is selected for etching processing; for example, when the device to be processed is a silicon material, the etching solution can be a mixed solution of hydrofluoric acid and hydrogen peroxide, and when the device to be processed is a gallium arsenide material, the etching solution can be a mixed solution of potassium permanganate and sulfuric acid.

[0059] In this embodiment, when the device to be processed is made of silicon material, the material of the etching container and the sample container can be polytetrafluoroethylene to avoid corrosion by hydrofluoric acid.

[0060] In this embodiment, the metal mask material used for catalytic etching process is usually a precious metal, such as gold, platinum, palladium, rhodium, etc.; the magnetic component contained in the metal mask is usually a magnetic metal or alloy such as iron, cobalt, nickel, etc.

[0061] In this embodiment, the etching solution performs directionally etching on the device to be processed under the catalytic effect of the metal mask; specifically, the etching speed of the etching solution on the material covered by the metal mask is much greater than the etching speed on other areas, and then holes are etched downward from the surface of the device to be processed. The metal mask settles with the etching process and is always located at the bottom of the etching channel, continuously catalyzing the etching solution to perform radial etching on the device to be processed.

[0062] In the traditional metal-assisted chemical etching process, the movement of the metal catalyst (metal mask) is not an ideal trajectory and is easily affected by various internal and external factors, such as the oxidant concentration in the etching solution, fluid properties, temperature, substrate surface properties, and the properties of the metal catalyst particles themselves, which makes it difficult to obtain smooth, straight, and complete sidewalls and surface morphology.

[0063] In this embodiment, the magnetic field generated by the electromagnet 31 after being energized produces an attractive force on the metal mask, and the metal mask moves along a predetermined trajectory under the constraint of the magnetic field; therefore, the etching solution performs precise direction etching on the substrate of the device to be processed under the catalysis of the metal mask, so that the channels formed by etching are straight and smooth.

[0064] In this embodiment, the central control device 5 is electrically connected to the main power supply; the central control device 5 controls the movement of multiple push rods 41 of the rotating base 4 through a motor drive, so that the electromagnet 31 rotates in the vertical direction to change the direction of the magnetic field it generates. The metal mask changes its movement direction under the action of the magnetic field, thereby changing the etching angle of the etching solution on the substrate of the device to be processed.

[0065] During the etching process, the magnetic field direction of the electromagnet 31 can be flexibly adjusted to form etching trajectories of nanoholes or nanowires with multiple angle changes; at the same time, the central control device 5 can also control the magnetic field strength generated by the electromagnet 31, thereby changing the attraction force on the metal mask, thereby achieving more precise intervention in the movement of the metal mask during the etching process.

[0066] In this embodiment, the central control device 5 can also be connected to the etching container 1 to control the etching container 1 to rotate in a horizontal plane, thereby changing the position and direction of the metal mask relative to the electromagnetic magnetic field.

[0067] Specifically, the central control device 5 drives the etching container to rotate through a motor drive assembly, and the motor drive assembly can be integrated with the rotating base 4. The etching container 1 is rotatably connected to the rotating base 4 to simplify the device layout; the motor drive assembly can also drive the etching container 1 to rotate through other arrangements, which are not limited here.

[0068] Among them, the central control device 5 also includes a timing module, which can be set to start the magnetic field generating device 3 at a certain time, or accurately control the movement of the push rod 41 of the rotating base 4, the rotation of the etching container 1 and the change of the magnetic field strength generated by the electromagnet 31 at a predetermined time, thereby accurately controlling the etching morphology of the nanopore / wire array.

[0069] The embodiment of the present invention is based on the metal-assisted chemical etching method and designs a nanohole / line array controllable etching processing device. The magnetic field generated by the electromagnet 31 constrains the movement of the metal mask containing magnetic components, so that the metal mask moves along a predetermined trajectory, so that the etched channels are straight and smooth; further, the embodiment of the present invention can change the movement trajectory of the metal mask by controlling the strength and direction of the magnetic field generated by the electromagnet 31, thereby achieving controllable etching angles, which is suitable for preparing nanostructure morphologies with different trajectories.

[0070] Based on the above embodiment, further, in one embodiment, the nanopore / line array controllable etching processing device further includes a water bath device 6;

[0071] The water bath device 6 is provided with a receiving cavity for containing water bath liquid; the etching container 1 is placed in the receiving cavity.

[0072] The central control device 5 is electrically connected to the water bath device 6 and is used to control the water bath temperature of the water bath device 6 .

[0073] In the process of metal-assisted chemical etching, temperature is a key factor, which has a significant impact on the etching rate, etching selectivity and etching uniformity. The water bath device 6 provided in this embodiment can provide a stable temperature environment to ensure that the etching reaction is carried out at a set temperature.

[0074] In addition, the etching container 1 is placed in the accommodating chamber of the water bath device 6, which can also prevent the leakage or splashing of chemical substances from causing damage to the equipment and operators, and play a certain safety protection function.

[0075] Furthermore, in one embodiment, the magnetic field generating device 3 further includes a power supply, a button switch 32 and a fuse 33;

[0076] The power supply is used to supply power to the electromagnet 31; the button switch 32 and the fuse 33 are connected in series to the electrical connection path between the power supply and the electromagnet 31, the button switch 32 is used to control the start and stop of the electromagnet 31, and the fuse 33 is used for fuse protection.

[0077] In this embodiment, the magnetic field generating device 3 can be automatically started and stopped by the central control device 5 at a preset time, and can also be manually started and stopped by the button switch 32 to ensure the flexibility of operation.

[0078] The fuse 33 is used for circuit fusing protection, such as overload protection and short circuit protection.

[0079] The nanopore / wire array controllable etching processing device proposed in the embodiment of the present invention can obtain high-precision nanopore / wire arrays by constraining the movement of the metal mask during the etching process through the magnetic field generated by the electromagnets in the magnetic field generating device, and the control process is easy to quantify. The magnetic field intervention increases the available range of the etching solution formula ratio to a certain extent, avoiding the solution preparation problem of metal-assisted chemical etching.

[0080] The processing device can adjust the magnetic field parameters to change the movement trajectory of the metal mask during the etching process, thereby obtaining different etching morphologies. It has great application potential for preparing nanopore / wire structure arrays with different trajectories.

[0081] The processing device has a certain degree of automation, and solves the accuracy and morphology problems of traditional metal-assisted chemical etching of nanopores / wires with high efficiency and low cost, while also reducing the uncertainty and safety hazards caused by manual operation.

[0082] Based on the above-mentioned embodiment of the processing device, the present invention proposes a controllable etching processing method for nanohole / line arrays. The method uses the processing device provided by the above-mentioned embodiment to perform etching processing on the device to be processed.

[0083] In one embodiment, a nanopore / line array controllable etching processing method includes:

[0084] Determine the parameters of the nanopore or nanowire array to be etched, such as Figure 6 As shown, the parameters of the nanopore or nanowire array mainly include the nanopore / wire radius r and the nanopore / wire spacing a.

[0085] Depending on the target nanopore / wire array parameters, perform the following steps:

[0086] S1, preparing a metal mask on the surface of the device to be processed;

[0087] Specifically, the metal mask includes a first metal layer, a second metal layer and a third metal layer; the first metal layer and the third metal layer are precious metal nanoparticles used to catalyze the etching solution to etch the device to be processed; the second metal layer is a magnetic metal or a magnetic alloy.

[0088] According to the different requirements for preparing nanopore and nanowire structures, there are certain differences in the process steps for preparing the metal mask.

[0089] In a specific embodiment, after the surface of the clean device to be processed is covered with photoresist, electron beam lithography is used to deposit metal masks three times according to the determined size. The first metal layer - gold nanoparticles is deposited first, and then the second metal layer - magnetic metal nanoparticles is deposited. The magnetic metal is used to respond to the magnetic field during the etching process, thereby guiding the movement of the gold nanoparticles. Finally, the third metal layer - gold nanoparticles is deposited to form a three-layer metal nanopore mask of gold - magnetic metal material - gold. This embodiment is used to prepare a nanopore structure.

[0090] In a specific embodiment, polystyrene beads are spin-coated on the surface of a clean device to be processed, reactive ion etching is used to reduce the diameter of the polystyrene beads, and then electron beam lithography is used to deposit metal films three times, similar to the three-layer mask of the nanopore, first depositing the first metal layer - gold nanoparticles, then depositing the second metal layer - magnetic metal nanoparticles, and finally depositing the third metal layer - gold nanoparticles. After the mask preparation is completed, the polystyrene beads are removed; this embodiment is used to prepare nanowire structures.

[0091] After the metal mask is prepared, the device to be processed is cut to the required size, rinsed with deionized water, and dried with nitrogen for later use; the following etching process specifically performs the following steps:

[0092] S2, according to the etching target and etching requirements, the etching solution is configured; the parameters of the magnetic field generating device and the rotating base are preset through the central control device;

[0093] Among them, the parameters of the magnetic field generating device include the intensity of the magnetic field, the start and stop time of the magnetic field, etc., and the parameters of the rotating base include the lifting height of multiple push rods / the rotation angle of the electromagnet, etc.

[0094] In one embodiment, the processing device further includes a water bath device, and the central control device needs to heat the water bath liquid in the water bath device to a preset temperature in advance and keep it warm.

[0095] S3, loading the device to be processed covered with the metal mask into the sample container, starting the magnetic field generating device and the rotating base, and injecting the etching solution into the etching container to etch the device to be processed.

[0096] After etching is completed, take out the device to be processed, soak it in deionized water for cleaning, and then blow it dry.

[0097] The magnetic field generating device is turned off by a button switch, or the magnetic field generating device is controlled to stop automatically by a central control device after the preset etching time is reached. After the device is turned off, various parameters automatically return to the initial values.

[0098] The present method embodiment can meet the preparation requirements of nanopores / wires of different sizes by adjusting different mask parameters, such as nanopore / wire radius and nanopore / wire spacing, and obtain smooth and straight nanopores / wires; by controlling the parameters in the etching process, such as the size and direction of the magnetic field generated by the electromagnet, the etching path can be controlled to achieve precise control of the etching morphology, thereby meeting the preparation requirements of nanopores or nanowire arrays of various morphologies.

[0099] The nanopore / line array controllable etching processing method provided by the present invention can be used for etching and processing semiconductor materials, such as silicon, gallium arsenide, silicon carbide, etc.

[0100] Taking silicon material as an example, the nanopore / line array controllable etching processing method proposed by the present invention is further explained through several specific embodiments below:

[0101] Example 1

[0102] See also Figure 3 and Figure 4 This embodiment is used to prepare a straight silicon nanopore array by etching, and the specific implementation steps are as follows:

[0103] Determine the radius and spacing of the etching target silicon nanohole array.

[0104] A clean N-type silicon wafer is selected, and the surface of the silicon substrate 100 is covered with photoresist 200 .

[0105] A first layer of noble metal mask gold nanoparticles 301 is deposited by electron beam lithography.

[0106] A second layer of magnetic metal mask magnetic metal nanoparticles 302 is deposited by electron beam lithography.

[0107] A third layer of noble metal mask gold nanoparticles 303 is deposited by electron beam lithography.

[0108] After the three-layer metal mask is prepared, the etched silicon wafer is prepared, the silicon wafer covered with the three-layer metal mask is cut into the required size and cleaned and dried to obtain the silicon wafer to be etched.

[0109] The metal-assisted chemical etching solution is configured according to the etching target parameters.

[0110] Various parameters of the magnetic field generating device and the rotating base are preset; in this embodiment, various parameters of the magnetic field generating device and the rotating base are preset so that the magnetic field generated by the electromagnet maintains a fixed direction and a fixed intensity during the entire etching process.

[0111] The etching silicon wafer is placed in a container, a magnetic field generating device is started, and a metal-assisted chemical etching solution is injected into the etching container.

[0112] After the etching is completed, the device is turned off, all parameters are returned to initial values, the silicon wafer is cleaned and blown dry, and a straight silicon nanopore 401 is obtained.

[0113] Example 2

[0114] See also Figure 3 and Figure 4 This embodiment is used for etching to prepare a bent silicon nanopore array. The specific implementation steps refer to Example 1. The difference from Example 1 is that:

[0115] Preset various parameters of the magnetic field generating device and the rotating base; in the present embodiment, the parameters of the magnetic field generating device and the rotating base are preset so that the direction and intensity of the magnetic field generated by the electromagnet continuously change during the entire etching process. The specific change process of the direction and intensity of the magnetic field is determined according to the required silicon nanopore trajectory morphology, and finally a bent silicon nanopore 402 is prepared.

[0116] Example 3

[0117] See also Figure 3 and Figure 5 This embodiment is used to prepare a straight silicon nanowire array, and the specific implementation steps are as follows:

[0118] Determine the radius and spacing of the etching target silicon nanohole array.

[0119] A clean N-type silicon wafer is selected, polystyrene beads are spin-coated on the surface of the silicon substrate 100, and the diameter of the polystyrene beads is reduced by reactive ion etching (RIE).

[0120] A first layer of noble metal mask gold nanoparticles 301 is deposited by electron beam lithography.

[0121] A second layer of magnetic metal mask magnetic metal nanoparticles 302 is deposited by electron beam lithography.

[0122] A third layer of noble metal mask gold nanoparticles 303 is deposited by electron beam lithography.

[0123] The polystyrene balls are removed, and the three-layer metal mask is prepared. The silicon wafer is prepared for etching. The silicon wafer covered with the three-layer metal mask is cut into the required size and cleaned and dried to obtain the silicon wafer to be etched.

[0124] The metal-assisted chemical etching solution is configured according to the etching target parameters.

[0125] Various parameters of the magnetic field generating device and the rotating base are preset; in this embodiment, various parameters of the magnetic field generating device and the rotating base are preset so that the magnetic field generated by the electromagnet maintains a fixed direction and a fixed intensity during the entire etching process.

[0126] The etching silicon wafer is placed in a container, a magnetic field generating device is started, and a metal-assisted chemical etching solution is injected into the etching container.

[0127] After the etching is completed, the device is turned off, all parameters are returned to initial values, the silicon wafer is cleaned and blown dry, and straight silicon nanowires 501 are obtained.

[0128] Example 4

[0129] See also Figure 3 and Figure 5 This embodiment is used for etching to prepare a bent silicon nanowire array. The specific implementation steps refer to Example 3. The difference from Example 3 is that:

[0130] Preset various parameters of the magnetic field generating device and the rotating base; in the present embodiment, the parameters of the magnetic field generating device and the rotating base are preset so that the direction and intensity of the magnetic field generated by the electromagnet continuously change during the entire etching process. The specific change process of the direction and intensity of the magnetic field is determined according to the required silicon nanowire trajectory morphology, and finally the bent silicon nanowire 502 is prepared.

[0131] The present invention also provides a semiconductor device.

[0132] The semiconductor device includes a nanohole array or a nanowire array; the nanohole array or the nanowire array is prepared by the nanohole / wire array controllable etching processing device provided by the above embodiment, or is prepared by the nanohole / wire array controllable etching processing method provided by the above embodiment.

[0133] The semiconductor device proposed in the present invention can be a solar cell, an integrated circuit element, a biosensor, a lithium-ion battery, or an electrode of a supercapacitor, etc., in which the nanopore / wire array can achieve gain effect or other special effects, and its substrate material can be a semiconductor material such as silicon, gallium arsenide, silicon carbide, etc.

[0134] The semiconductor device proposed in the present invention is prepared with a nanopore / wire array structure by the processing device and method provided by the aforementioned embodiment. Therefore, the semiconductor device can achieve the beneficial effects possessed by the aforementioned processing device and method embodiments, which will not be elaborated herein.

[0135] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A nanopore / line array controllable etching processing device for etching a device to be processed, characterized in that: A metal mask is provided on the surface of the device to be processed, wherein the metal mask contains a magnetic component, and the processing device comprises: An etching container for containing an etching solution; a sample container for carrying a device to be processed is fixed at the bottom of the etching container, and the etching solution is used to etch the device to be processed under the catalytic action of the metal mask; A magnetic field generating device, comprising an electromagnet disposed outside the etching container and directly below the sample container; A rotating base is arranged directly below the electromagnet; the rotating base is provided with a plurality of push rods abutting against the electromagnet; The central control device is electrically connected to the magnetic field generating device and is used to control the magnetic field strength of the electromagnet; and is electrically connected to the rotating base and is used to control the movement of the plurality of push rods so that the electromagnet rotates in the vertical direction.

2. The processing device according to claim 1, characterized in that: The central control device is connected to the etching container and is used to control the etching container to rotate on a horizontal plane.

3. The processing device according to claim 1, characterized in that: A water bath apparatus is included; The water bath device is provided with a receiving cavity for containing water bath liquid, and the etching container is placed in the receiving cavity; The central control device is electrically connected to the water bath device and is used to control the water bath temperature of the water bath device.

4. The processing device according to claim 1, characterized in that: The magnetic field generating device also includes a power supply, a button switch and a fuse; The power supply is used to supply power to the electromagnet; the button switch and the fuse are connected in series to the electrical connection path between the power supply and the electromagnet, the button switch is used to control the start and stop of the electromagnet, and the fuse is used for fuse protection.

5. A nanopore / line array controllable etching processing method, characterized in that: Using the nanopore and line array controllable etching processing device according to any one of claims 1 to 4, the method comprises: S1, preparing a metal mask on the surface of the device to be processed; S2, according to the etching target and etching requirements, the etching solution is configured; the parameters of the magnetic field generating device and the rotating base are preset through the central control device; S3, loading the device to be processed covered with the metal mask into the sample container, starting the magnetic field generating device and the rotating base, injecting the etching solution into the etching container, and etching the device to be processed.

6. The method according to claim 5, characterized in that The metal mask includes a first metal layer, a second metal layer and a third metal layer; The first metal layer and the third metal layer are used to catalyze the etching solution to etch the device to be processed; The second metal layer is a magnetic metal.

7. The method according to claim 6, characterized in that The step S1 specifically includes the following steps: preparing a photoresist mask on the surface of the device to be processed; The first metal layer, the second metal layer and the third metal layer are deposited in sequence.

8. The method according to claim 6, characterized in that The step S1 specifically includes the following steps: Spin-coat polystyrene beads on the surface of the device to be processed; Reducing the diameter of the polystyrene spheres by reactive ion etching; Depositing the first metal layer, the second metal layer and the third metal layer in sequence; Remove the polystyrene beads.

9. The method according to any one of claims 5 to 8, characterized in that The material of the device to be processed is at least one of silicon, gallium arsenide, and silicon carbide.

10. A semiconductor device, characterized in that: including nanohole arrays or nanowire arrays; The nanopore array or the nanowire array is prepared by the nanopore / wire array controllable etching processing device described in any one of claims 1-4, or is prepared by the nanopore / wire array controllable etching processing method described in any one of claims 5-9.

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