Processing apparatus for forming surface acoustic wave resonator device and method for forming surface acoustic wave resonator device

Abstract

The invention discloses a processing device for forming a surface acoustic wave resonator device and a forming method of the surface acoustic wave resonator device. The processing device comprises a first transmission cavity; the plurality of processing cavities are respectively connected with the first transmission cavity, the plurality of processing cavities comprise a dry etching cavity and a wet cleaning cavity, the dry etching cavity is used for etching an interdigital material layer to form an interdigital electrode, the wet cleaning cavity is used for removing etching residues on the surface of the interdigital electrode, and the dry etching cavity is used for etching the interdigital material layer to form the interdigital electrode. And the first transmission cavity is used for transferring materials among the plurality of treatment cavities. According to the processing device, the reaction process of dry etching and wet cleaning of the semiconductor structure is realized in one device, and the semiconductor structure is transmitted in the cavity of the device, so that the waiting time and the transmission time between technological processes can be reduced, the production efficiency is improved, and the yield of materials is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a processing device for forming a surface acoustic wave resonator device and a method for forming the surface acoustic wave resonator device. Background Art

[0002] During the production of semiconductor chips, an etching process or a lift-off process is used to achieve pattern transfer of metal interconnects.

[0003] The interdigital transducer (IDT) of the filter chip is often prepared using metals with relatively active properties (including but not limited to Al / AlCu). In the process of etching the metal of the interdigital transducer in the existing etching process, the by-products generated are very easy to react with the external atmospheric environment and cause corrosion of the interdigital transducer.

[0004] Therefore, there is an urgent need to improve the yield problem of IDT devices. Summary of the invention

[0005] The technical problem solved by the present invention is to provide a processing device for forming a surface acoustic wave resonator device and a method for forming a surface acoustic wave resonator device, so as to improve the yield rate of the interdigital transducer device.

[0006] In order to solve the above technical problems, the technical solution of the present invention provides a processing device for forming a surface acoustic wave resonator device, including: a first transmission cavity; multiple processing cavities, the multiple processing cavities are respectively connected to the first transmission cavity, the multiple processing cavities include: a dry etching cavity and a wet cleaning cavity, the dry etching cavity is used to etch the forked material layer to form forked electrodes, the wet cleaning cavity is used to remove etching residues on the surface of the forked electrodes, and the first transmission cavity is used to transfer materials between the multiple processing cavities.

[0007] Optionally, the processing chamber further includes: an ashing chamber, the ashing chamber is used to remove the patterned photoresist layer of the etched interdigital material layer, and the dry etching chamber, wet cleaning chamber and ashing chamber are respectively arranged on the side walls of the first transmission chamber.

[0008] Optionally, the processing chamber further includes: an alignment chamber or a vapor deposition chamber.

[0009] Optionally, it also includes: a plurality of first isolation doors, respectively arranged between each of the processing chambers and the first transmission chamber, and the plurality of first isolation doors can be opened and closed to achieve communication and isolation between the plurality of processing chambers and the first transmission chamber.

[0010] Optionally, it also includes: a second transmission chamber connecting the first transmission chamber and the wet cleaning chamber.

[0011] Optionally, it further includes: a second isolation door disposed between the wet cleaning chamber and the second transfer chamber, wherein the second isolation door can be opened and closed to achieve communication and isolation between the wet cleaning chamber and the second transfer chamber.

[0012] Optionally, it further includes: a third isolation door disposed between the first transmission chamber and the second transmission chamber, wherein the third isolation door can be opened and closed to achieve communication and isolation between the first transmission chamber and the second transmission chamber.

[0013] Optionally, the second transmission chamber is a vacuum chamber, and the vacuum degree of the second transmission chamber is lower than the vacuum degree of the first transmission chamber.

[0014] Optionally, the vacuum degree range of the first transmission cavity is less than or equal to 150 mTorr; and the vacuum degree range of the second transmission cavity is less than or equal to 100 mTorr.

[0015] Optionally, the dew point temperature of the second transmission chamber ranges from -100°C to -80°C.

[0016] Optionally, the wet cleaning chamber includes: a first wet cleaning chamber and a second wet cleaning chamber, and the first wet cleaning chamber and the second wet cleaning chamber are respectively connected to the second transmission chamber.

[0017] Optionally, the processing device further includes: a wafer storage area, the wafer storage area is connected to the first transmission cavity, and the wafer storage area is arranged on a side wall of the first transmission cavity.

[0018] Optionally, a cross-sectional shape of the first transmission cavity along the horizontal direction includes: rectangle, pentagon, circle or hexagon.

[0019] Correspondingly, the technical solution of the present invention also provides a method for forming a surface acoustic wave resonator device, comprising: providing the above-mentioned processing device; obtaining a semiconductor structure, the semiconductor structure comprising: a piezoelectric layer, a finger material layer located on the surface of the piezoelectric layer, and a patterned photoresist layer located on the surface of the finger material layer; in a dry etching chamber, using the patterned photoresist layer as a mask, etching the finger material layer using a dry etching process to form a plurality of finger electrodes; after the dry etching process, cleaning the semiconductor structure in a wet cleaning chamber.

[0020] Optionally, the process parameters of the dry etching process include: the etching gas includes Cl2, BCl3, Ar, N2, CHF3 and C2H4.

[0021] Optionally, the material of the interdigital material layer includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.

[0022] Optionally, the wet cleaning chamber includes: a first wet cleaning chamber and a second wet cleaning chamber. After the dry etching process, the semiconductor structure is first cleaned in the first wet cleaning chamber, and the semiconductor structure is second cleaned in the second wet cleaning chamber.

[0023] Optionally, performing a first cleaning on the semiconductor structure in a first wet cleaning chamber includes: introducing nitrogen or an inert gas into the first wet cleaning chamber, wherein the inert gas includes argon or helium; and spraying and drying the semiconductor structure with deionized water.

[0024] Optionally, performing a second cleaning on the semiconductor structure in a second wet cleaning chamber includes: introducing nitrogen or an inert gas into the second wet cleaning chamber, wherein the inert gas includes argon or helium; and spraying and drying the semiconductor structure with a cleaning liquid.

[0025] Optionally, the method further includes: after the dry etching process, ashing the semiconductor structure in an ashing chamber to remove the patterned photoresist layer.

[0026] Optionally, after the first cleaning is performed, a second cleaning is performed; after the second cleaning is performed, the semiconductor structure is ashed in an ashing chamber.

[0027] Optionally, it also includes: the semiconductor structure is transferred to the dry etching chamber via the first transfer chamber for dry etching; after the dry etching, the semiconductor structure is transferred to the first wet cleaning chamber via the first transfer chamber and the second transfer chamber in sequence for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber via the second transfer chamber for second cleaning; after the second cleaning, the semiconductor structure is transferred to the ashing chamber via the second transfer chamber and the first transfer chamber in sequence for ashing treatment.

[0028] Optionally, after the ashing treatment, the first cleaning is performed; after the first cleaning, the second cleaning is performed.

[0029] Optionally, it also includes: the semiconductor structure is transferred to the dry etching chamber via the first transfer chamber for dry etching; after the dry etching, the semiconductor structure is transferred to the ashing chamber via the first transfer chamber for ashing treatment; after the ashing treatment, the semiconductor structure is transferred to the first wet cleaning chamber via the first transfer chamber and the second transfer chamber in sequence for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber via the second transfer chamber for second cleaning.

[0030] Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

[0031] The present invention is a processing device for forming a surface acoustic wave resonator device, which integrates a dry etching chamber and a wet cleaning chamber. The dry etching chamber is used to etch a finger material layer to form a finger electrode, and the wet cleaning chamber is used to remove etching residues on the surface of the finger electrode. The semiconductor structure can realize the reaction process of dry etching and wet cleaning in one device and transmit it in the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of materials.

[0032] Furthermore, the material is transmitted between the dry etching chamber and the wet cleaning chamber via the first transmission chamber and the second transmission chamber. The first transmission chamber and the second transmission chamber are vacuum chambers, and the material will not be exposed to the atmospheric environment, thereby preventing the interdigital electrodes from being corroded by the atmospheric environment during the transmission process.

[0033] Furthermore, the dew point temperature range of the second transmission chamber is -100°C to -80°C. The second transmission chamber is a low dew point chamber. The material is transmitted in a low dew point environment and will not be exposed to the atmospheric environment during the transmission process, thereby preventing the interdigital electrodes from being corroded by the atmospheric environment during the transmission process.

[0034] Furthermore, the processing chamber also includes an ashing chamber, so that the processing device integrates a dry etching chamber, a wet cleaning chamber and an ashing chamber, so that the semiconductor structure can realize the reaction processes of dry etching, wet cleaning, and ashing treatment in one device, and transfer them within the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of the semiconductor structure.

[0035] Furthermore, the vacuum degree in the second transmission chamber is lower than the vacuum degree in the first transmission chamber. Since the second transmission chamber is connected to the wet cleaning chamber, the second transmission chamber with lower vacuum degree can play a role of vacuum transition when the semiconductor structure is transferred between the first transmission chamber and the wet cleaning chamber, thereby reducing the vacuum pumping time and improving the transmission efficiency.

[0036] The method for forming a surface acoustic wave resonator device of the present invention adopts a processing device that integrates a dry etching chamber and a wet cleaning chamber. The dry etching chamber is used to etch a finger material layer to form a finger electrode, and the wet cleaning chamber is used to remove etching residues on the surface of the finger electrode. The semiconductor structure can realize the reaction process of dry etching and wet cleaning in one device and be transmitted in the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of materials.

[0037] Furthermore, the semiconductor structure is transferred between the dry etching chamber and the wet cleaning chamber via the first transfer chamber and the second transfer chamber, which can reduce the waiting time and transfer time between process flows, thereby improving production efficiency; in addition, the first transfer chamber is a vacuum chamber, and the second transfer chamber is a vacuum chamber or a low dew point chamber, and the semiconductor structure will not be exposed to the atmospheric environment, thereby preventing the interdigitated electrodes from being corroded by the atmospheric environment during the transmission process. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 is a schematic diagram of the structure of a processing device in an embodiment of the present invention;

[0039] Figure 2 is a schematic flow chart of a method for forming a surface acoustic wave resonator device in an embodiment of the present invention;

[0040] Figure 3 and Figure 4 It is a structural schematic diagram of the process of forming a surface acoustic wave resonator device in an embodiment of the present invention. DETAILED DESCRIPTION

[0041] As described in the background art, the yield problem of IDT devices needs to be improved urgently.

[0042] Specifically, the interdigital transducer of the surface acoustic wave resonator device usually uses Al / AlCu materials. In the process of etching Al / AlCu materials, the following gases are usually used: chlorine (Cl2), boron trichloride (BCl3), argon (Ar), nitrogen (N2), trifluoromethane (CHF3) and acetylene (C2H4). Chlorine (Cl2) is the main etching gas, which reacts chemically with aluminum, and the generated volatile byproduct AlCl3 is carried out of the processing chamber by the gas flow. Boron trichloride (BCl3) provides BCl3+ on the one hand, which bombards the silicon wafer surface vertically to achieve anisotropic etching. On the other hand, since the aluminum surface is easily oxidized into aluminum oxide, this layer of self-generated aluminum oxide blocks the contact between chlorine and aluminum in the early stage of etching, hindering the further progress of etching. Adding boron trichloride is conducive to reducing this oxide layer (such as the equation Al2O3+3BCl3→2AlCl3+3BOCl), which promotes the continuation of the etching process.

[0043] Argon (Ar) is ionized to generate Ar+, which mainly provides physical vertical bombardment on the surface of silicon wafer. N2, CHF3 and C2H4 are the main passivation gases. N2 reacts with Al produced by nitridation of metal sidewalls. x N y, the polymers generated by the reaction of CHF3 and C2H4 with the photoresist will be deposited on the metal sidewalls, forming a passivation layer that prevents further reactions. A small amount of silicon and copper are usually added to metal aluminum to improve the reliability of electronic devices. Silicon and Cl react to generate volatile SiCl4, which can be easily taken out of the processing chamber. CuCl2 generated by the reaction of copper and Cl is not very volatile, so it is necessary to increase physical ion bombardment to remove copper atoms, which is usually achieved by increasing Ar and bias power, so it is necessary to increase process conditions to meet performance requirements.

[0044] After the Si-based substrate chip is dry-etched with Al / AlCu / AlSiCu, a combined machine with a dry etch chamber (Dry etch CH) and an ashing chamber (PR Strip CH) is used to remove the photoresist and byproducts on the wafer surface by means of high-temperature dry stripping (>200°C) to prevent the byproducts from reacting with water vapor in the air to generate hydrochloric acid. The non-etching and stripping integrated machine controls the process time (Q time) and is placed in a separate dry stripping machine. For piezoelectric materials such as lithium tantalate (LiTaO3, LT for short) and lithium niobate (LiNbO3, LN for short) wafers, the wafer will warp when the temperature rises. When the temperature is higher than 150°C, the probability of wafer fragmentation will increase significantly. The photoresist and byproducts cannot be completely removed at low temperatures.

[0045] In summary, active metal aluminum is easily corroded. When copper elements are added to metal aluminum, the corrosion susceptibility of active metal aluminum is improved, but the etching conditions need to be increased. In addition, during the high-temperature dry stripping process after metal etching is completed, too high a temperature will increase the probability of fragmentation of lithium tantalate and lithium niobate wafers, and too low a temperature will make it impossible to completely remove the photoresist and its by-products.

[0046] Therefore, a processing device and a process method are needed to improve the above problems.

[0047] In order to solve the above problems, the technical solution of the present invention provides a processing device and a method for forming a surface acoustic wave resonator device, which integrates a dry etching chamber and a wet cleaning chamber. The dry etching chamber is used to etch the forked material layer to form a forked electrode, and the wet cleaning chamber is used to remove the etching residues on the surface of the forked electrode. The semiconductor structure can realize the reaction process of dry etching and wet cleaning in one device and be transmitted within the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of materials.

[0048] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0049] Figure 1 Schematic diagram of the structure of the processing device in the embodiment of the present invention.

[0050] Please refer to Figure 1 , Figure 1 It is a top view schematic diagram of the processing device, which includes: a first transmission chamber 100; multiple processing chambers, each of which is connected to the first transmission chamber 100, and the multiple processing chambers include: a dry etching chamber 101 (DR CH) and a wet cleaning chamber, the dry etching chamber 101 is used to etch the interdigitated material layer to form interdigitated electrodes, the wet cleaning chamber is used to remove etching residues on the surface of the interdigitated electrodes, and the first transmission chamber 100 is used to transfer materials between the multiple processing chambers.

[0051] The cross-sectional shape of the first transmission cavity 100 along the horizontal direction includes: rectangle, pentagon, circle or hexagon.

[0052] In this embodiment, the cross-sectional shape of the first transfer cavity 100 (Transfer1 CH) along the horizontal direction is a pentagon. The dry etching cavity 101 and the wet cleaning cavity are respectively disposed on the side walls of the first transfer cavity 100 .

[0053] The dry etching chamber 101 is used for performing a dry etching process. The wet cleaning chamber is used for performing a wet cleaning process.

[0054] In this embodiment, the processing chamber also includes: an ashing chamber 102 (Ashing CH), which is used to remove the patterned photoresist layer of the etched interdigitated material layer, and the dry etching chamber 101, the wet cleaning chamber and the ashing chamber 102 are respectively arranged on the side walls of the first transmission chamber 100.

[0055] The processing chamber further includes: an alignment chamber 103 (Aligner CH) or a vapor deposition chamber. The alignment chamber 103 is disposed on the side wall of the first transmission chamber 100; and the vapor deposition chamber is disposed on the side wall of the first transmission chamber 100.

[0056] The alignment chamber 103 is used for alignment before etching. The vapor deposition chamber is used for chemical vapor deposition or physical vapor deposition process.

[0057] In this embodiment, the processing device further includes: a wafer storage area, the wafer storage area is connected to the first transmission chamber 100 , and the wafer storage area is arranged on a side wall of the first transmission chamber 100 . Figure 1 It is schematically shown that the wafer storage area includes Cassette 1 and Cassette 2, and Cassette 1 and Cassette 2 are used to place wafer fixtures to ensure the cleanliness of the wafer fixtures.

[0058] In this embodiment, the first transmission chamber 100 is a vacuum chamber, the vacuum degree of the first transmission chamber 100 is less than the vacuum degree of the dry etching chamber 101, the vacuum degree of the first transmission chamber 100 is less than the vacuum degree of the ashing chamber 102, and the vacuum degree of the first transmission chamber 100 is less than the vacuum degree of the alignment chamber 103.

[0059] In this embodiment, the processing device also includes: multiple first isolation doors (not shown), which are respectively arranged between each of the processing chambers and the first transmission chamber 100, and the multiple first isolation doors can be opened and closed to achieve connectivity and isolation between the multiple processing chambers and the first transmission chamber 100.

[0060] In this embodiment, the processing device further includes: a second transfer chamber 105 (Transfer2 CH), the second transfer chamber 105 connects the first transfer chamber 100 and the wet cleaning chamber, and the second transfer chamber 105 is arranged on the side wall of the first transfer chamber 100. The second transfer chamber 105 is used to transfer materials between the dry etching chamber 101 and the wet cleaning chamber, and between the ashing chamber 102 and the wet cleaning chamber.

[0061] In this embodiment, the second transmission chamber 105 is a vacuum chamber, and the vacuum degree of the second transmission chamber 105 is lower than the vacuum degree of the first transmission chamber 100 .

[0062] The vacuum degree in the second transmission chamber 105 is lower than the vacuum degree in the first transmission chamber 100. Since the second transmission chamber 105 is connected to the wet cleaning chamber, the second transmission chamber 105 with lower vacuum degree can play a role of vacuum transition when the semiconductor structure is transferred between the first transmission chamber 100 and the wet cleaning chamber, thereby reducing the vacuum pumping time and improving the transmission efficiency.

[0063] In this embodiment, the vacuum degree range of the first transmission chamber 100 is less than or equal to 150 mTorr; the vacuum degree range of the second transmission chamber 105 is less than or equal to 100 mTorr.

[0064] The second transmission chamber 105 is a low vacuum chamber, which can better enable the material to transition between the wet cleaning chamber and the first transmission chamber 100, and further enable the material to transfer between the wet cleaning chamber and the dry etching chamber; in addition, the first transmission chamber 100 and the second transmission chamber 105 are both vacuum chambers, and the material is transmitted in a vacuum environment and will not be exposed to the atmospheric environment during the transmission process, thereby avoiding the erosion of the interdigital electrodes by the atmospheric environment during the transmission process, and preventing the interdigital material layer including the active metal material from being corroded.

[0065] In other embodiments, the second transmission chamber is a low dew point chamber, that is, the humidity of the second transmission chamber is maintained in a constant range, and the requirement of maintaining the humidity of the second transmission chamber in a constant range is achieved by passing a low dew point gas such as nitrogen (N2) with lower humidity than air, an inert gas (argon or helium) or compressed dry air (CDA) for a long time.

[0066] The dew point temperature of the second transmission chamber is -100°C to -80°C, preferably -90°C.

[0067] The first transmission chamber is a vacuum chamber, and the second transmission chamber is a low dew point chamber. The material is transmitted in a low dew point environment and will not be exposed to the atmospheric environment during the transmission process, thereby preventing the interdigital electrodes from being corroded by the atmospheric environment during the transmission process and preventing the interdigital material layer including active metal materials from being corroded.

[0068] In this embodiment, the processing device further includes: a second isolation door (not shown) arranged between the wet cleaning chamber and the second transfer chamber 105, the second isolation door can be opened and closed, the wet cleaning chamber and the second transfer chamber 105 are connected by opening the second isolation door, and the wet cleaning chamber and the second transfer chamber 105 are isolated by closing the second isolation door.

[0069] In this embodiment, the processing device further includes: a third isolation door (not shown) arranged between the first transmission chamber 100 and the second transmission chamber 105, and the third isolation door can be opened and closed. The first transmission chamber 100 and the second transmission chamber 105 are connected to each other by opening the third isolation door, and the first transmission chamber 100 and the second transmission chamber 105 are isolated from each other by closing the third isolation door.

[0070] The wet cleaning chamber includes: a first wet cleaning chamber 106 (WC1 CH) and a second wet cleaning chamber 107 (WC2CH), the first wet cleaning chamber 106 and the second wet cleaning chamber 107 are respectively connected to the second transfer chamber 105, the second isolation gate is provided between the first wet cleaning chamber 106 and the second transfer chamber 105, and the second isolation gate is provided between the second wet cleaning chamber 107 and the second transfer chamber 105.

[0071] In this embodiment, the cleaning liquid used in the first wet cleaning chamber 106 (WC1 CH) is deionized water; the cleaning liquid used in the second wet cleaning chamber 107 (WC2 CH) contains a detergent.

[0072] The first wet cleaning chamber 106 is used to spray and clean the surfaces of the interdigital electrodes with deionized water and then spin dry them; the second wet cleaning chamber 107 is used to spray and clean the surfaces of the interdigital electrodes with a detergent solution and then spin dry them.

[0073] The processing device integrates a dry etching chamber 101 and a wet cleaning chamber. The dry etching chamber 101 is used to etch the interdigital material layer to form interdigital electrodes, and the wet cleaning chamber is used to remove etching residues on the surface of the interdigital electrodes. The semiconductor structure can realize the reaction process of dry etching and wet cleaning in one device and be transferred within the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of materials.

[0074] In addition, the material is transferred between the dry etching chamber 101 and the wet cleaning chamber via the first transfer chamber 100 and the second transfer chamber 105. The first transfer chamber 100 is a vacuum chamber, and the second transfer chamber 105 is a vacuum chamber or a low dew point chamber. The material will not be exposed to the atmospheric environment, thereby preventing the interdigital electrodes from being corroded by the atmospheric environment during the transfer process.

[0075] In addition, the processing chamber also includes an ashing chamber 102, so that the processing device integrates a dry etching chamber 101, a wet cleaning chamber and an ashing chamber 102, so that the semiconductor structure can realize the reaction process of dry etching, wet cleaning, and ashing treatment in one device, and transfer it within the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of the semiconductor structure.

[0076] Figure 2 It is a schematic flow chart of a method for forming a surface acoustic wave resonator device in an embodiment of the present invention.

[0077] Please refer to Figure 2 , using Figure 1 The method for forming the surface acoustic wave resonator device by the processing device comprises:

[0078] Step S10: obtaining a semiconductor structure, the semiconductor structure comprising: a piezoelectric layer, an interdigitated material layer located on a surface of the piezoelectric layer, and a patterned photoresist layer located on a surface of the interdigitated material layer;

[0079] Step S20: in a dry etching chamber, using the patterned photoresist layer as a mask, and using a dry etching process to etch the interdigital material layer to form a plurality of interdigital electrodes;

[0080] Step S30: After the dry etching process, the semiconductor structure is cleaned in a wet cleaning chamber.

[0081] A series of process flows of performing dry etching, first cleaning, second cleaning and ashing treatment on the semiconductor structure using the processing device can save process flows and improve the yield of the formed semiconductor structure.

[0082] Next, each step is analyzed and explained.

[0083] Please continue to refer to Figure 1 , executing step S10: obtaining a semiconductor structure, the semiconductor structure comprising: a piezoelectric layer 200, an interdigitated material layer located on the surface of the piezoelectric layer 200, and a patterned photoresist layer 202 located on the surface of the interdigitated material layer.

[0084] In this embodiment, the piezoelectric layer is a piezoelectric substrate, and the material of the piezoelectric layer includes lithium tantalate (LiTaO3, LT for short) or lithium niobate (LiNbO3, LN for short).

[0085] The interdigitated material layer includes a single-layer structure or a multi-layer structure, and the material of the single-layer structure includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy; the multi-layer structure includes a bottom structure and a top structure located on the bottom structure, and the material of the bottom structure includes molybdenum, tungsten, or titanium, etc.; the material of the top structure includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.

[0086] In this embodiment, the interdigital material layer includes a single-layer structure, and the material of the single-layer structure includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.

[0087] Please continue to refer to Figure 1 , executing step S20: in the dry etching chamber 101 , using the patterned photoresist layer 202 as a mask, adopting a dry etching process to etch the interdigital material layer to form a plurality of interdigital electrodes 201 .

[0088] Please refer to Figure 3 In the present embodiment, the interdigitated material layer is etched in a dry etching chamber to form interdigitated electrodes 201, including: forming a patterned photoresist layer 202 on the surface of the interdigitated material layer; etching the interdigitated material layer using the patterned photoresist layer 202 as a mask until the surface of the piezoelectric layer 200 is exposed, and forming a plurality of interdigitated electrodes 201 on the surface of the piezoelectric layer 200.

[0089] In this embodiment, the process of etching the interdigital material layer using the patterned photoresist layer 202 as a mask includes a dry etching process, and the process parameters of the dry etching process include: the etching gas includes chlorine (Cl2), boron trichloride (BCl3), argon (Ar), nitrogen (N2), trifluoromethane (CHF3) and acetylene (C2H4).

[0090] In other embodiments, the interdigitated material layer includes a bottom structure and a top structure, the material of the top structure includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy, and the process parameters of the dry etching process for etching the top structure include: etching gases include chlorine (Cl2), boron trichloride (BCl3), argon (Ar), nitrogen (N2), trifluoromethane (CHF3) and acetylene (C2H4); the material of the bottom structure includes molybdenum, tungsten, or titanium, etc., and the process parameters of the dry etching process for etching the bottom structure include: the gas includes fluorine-containing gas.

[0091] Please continue to refer to Figure 1 , executing step S30: cleaning the semiconductor structure in a wet cleaning chamber after the dry etching process.

[0092] The wet cleaning chamber includes: a first wet cleaning chamber 106 and a second wet cleaning chamber 107 . After the dry etching process, the semiconductor structure is first cleaned in the first wet cleaning chamber 106 , and the semiconductor structure is second cleaned in the second wet cleaning chamber 107 .

[0093] In this embodiment, the semiconductor structure is first cleaned in the first wet cleaning chamber 106, including: introducing nitrogen or an inert gas into the first wet cleaning chamber 106, wherein the inert gas includes argon or helium; and spraying and drying the semiconductor structure with deionized water.

[0094] Nitrogen or inert gas is introduced into the first wet cleaning chamber 106 to reduce the water vapor in the first wet cleaning chamber 106 to prevent the interdigital electrodes 201 from being corroded by the water vapor; the semiconductor structure is sprayed and rinsed with deionized water and then dried to remove chloride ions on the surface of the semiconductor structure to reduce the reaction of chloride ions with water to generate hydrochloric acid and corrode the interdigital electrodes.

[0095] In this embodiment, the semiconductor structure is subjected to a second cleaning in the second wet cleaning chamber 107 , including: introducing nitrogen or an inert gas into the second wet cleaning chamber 107 , wherein the inert gas includes argon or helium; and spraying and drying the semiconductor structure with a cleaning liquid.

[0096] Nitrogen or inert gas is introduced into the second wet cleaning chamber 107 to reduce the water vapor in the second wet cleaning chamber 107 to prevent the interdigital electrodes 201 from being corroded by water vapor; the semiconductor structure is sprayed and rinsed with a detergent solution and then dried, which can better remove the photoresist and reaction byproducts on the surface of the semiconductor structure.

[0097] The cleaning agent solution includes a hydroxyl-containing solution, and the cleaning agent solution includes potassium hydroxide (KOH), sodium hydroxide (NaOH), ammonium hydroxide (NH4OH), and the like.

[0098] In this embodiment, after the dry etching process, the method further includes: performing an ashing process on the semiconductor structure in the ashing chamber 102 to remove the patterned photoresist layer 202 .

[0099] For the process of removing the patterned photoresist layer 202, please refer to Figure 4 After removing the patterned photoresist layer 202 , the semiconductor structure includes a piezoelectric substrate 200 and interdigital electrodes 201 located on the piezoelectric substrate 200 .

[0100] The process parameters of the ashing process include: the reaction gas includes oxygen, and the reaction temperature ranges from 80 degrees Celsius to 150 degrees Celsius.

[0101] The temperature in the ashing chamber 102 is relatively low, and the piezoelectric substrate 200 is not easily affected by high temperature to cause deformation or fragmentation, thereby improving the yield of the semiconductor structure.

[0102] In one embodiment, the process sequence of the first cleaning, the second cleaning and the ashing process is: after the dry etching process, the first cleaning is performed; after the first cleaning, the second cleaning is performed; after the second cleaning, the semiconductor structure is ashed in the ashing chamber 102.

[0103] The specific process is as follows: the semiconductor structure is transferred to the dry etching chamber 101 via the first transfer chamber 100 for dry etching; after dry etching, the semiconductor structure is transferred to the first wet cleaning chamber 106 via the first transfer chamber 100 and the second transfer chamber 105 in sequence for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber 107 via the second transfer chamber 105 for second cleaning; after the second cleaning, the semiconductor structure is transferred to the ashing chamber 102 via the second transfer chamber 105 and the first transfer chamber 100 in sequence for ashing treatment.

[0104] In another embodiment, the process sequence of the first cleaning, the second cleaning and the ashing process is: after the dry etching process, the ashing process is performed; after the ashing process, the first cleaning is performed; after the first cleaning, the second cleaning is performed.

[0105] The specific process is as follows: the semiconductor structure is transferred to the dry etching chamber 101 via the first transfer chamber 100 for dry etching; after dry etching, the semiconductor structure is transferred to the ashing chamber 102 via the first transfer chamber 100 for ashing treatment; after ashing treatment, the semiconductor structure is transferred to the first wet cleaning chamber 106 via the first transfer chamber 100 and the second transfer chamber 105 in sequence for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber 107 via the second transfer chamber 105 for second cleaning.

[0106] During the formation of the surface acoustic wave resonator device, a processing device integrating a dry etching chamber 101 and a wet cleaning chamber is used. The dry etching chamber 101 is used to etch the finger material layer to form finger electrodes, and the wet cleaning chamber is used to remove etching residues on the surface of the finger electrodes. This enables the semiconductor structure to realize the reaction process of dry etching and wet cleaning in one device and transmit it within the chamber of the device, which can reduce the waiting time and transmission time between process flows, thereby improving production efficiency and improving the yield of materials.

[0107] In addition, the semiconductor structure is transferred between the dry etching chamber 101 and the wet cleaning chamber via the first transfer chamber 100 and the second transfer chamber 105. The first transfer chamber 100 is a vacuum chamber, and the second transfer chamber 105 is a vacuum chamber or a low dew point chamber. The semiconductor structure will not be exposed to the atmospheric environment, thereby preventing the interdigitated electrodes from being corroded by the atmospheric environment during the transfer process.

[0108] In addition, the first cleaning, the second cleaning and the ashing treatment are all low-temperature processes, which can avoid deformation and fragmentation of the piezoelectric substrate 200 (LN / LT) caused by high-temperature processes, thereby improving the yield of the semiconductor structure.

[0109] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A processing device for forming a surface acoustic wave resonator device, characterized in that: include: a first transmission cavity; Multiple processing chambers, each of which is connected to the first transmission chamber respectively, and the multiple processing chambers include: a dry etching chamber and a wet cleaning chamber, the dry etching chamber is used to etch the finger material layer to form a finger electrode, the wet cleaning chamber is used to remove etching residues on the surface of the finger electrode, and the first transmission chamber is used to transfer materials between the multiple processing chambers.

2. The processing device according to claim 1, characterized in that The processing chamber further comprises: an ashing chamber, wherein the ashing chamber is used to remove the patterned photoresist layer for etching the interdigital material layer, and the dry etching chamber, the wet cleaning chamber and the ashing chamber are respectively arranged on the side walls of the first transmission chamber.

3. The processing device according to claim 2, characterized in that The processing chamber further includes: an alignment chamber or a vapor deposition chamber.

4. The processing device according to claim 1, characterized in that Also includes: A plurality of first isolation doors are respectively disposed between each of the processing chambers and the first transmission chamber. The plurality of first isolation doors can be opened and closed to achieve the connection and isolation between the plurality of processing chambers and the first transmission chamber.

5. The processing device according to claim 1, characterized in that Also includes: The second transmission chamber is connected to the first transmission chamber and the wet cleaning chamber.

6. The processing device according to claim 5, characterized in that Also includes: A second isolation door is disposed between the wet cleaning chamber and the second transfer chamber, and the second isolation door can be opened and closed to achieve communication and isolation between the wet cleaning chamber and the second transfer chamber.

7. The processing device according to claim 5, characterized in that Also includes: A third isolation door is disposed between the first transmission chamber and the second transmission chamber, and the third isolation door can be opened and closed to achieve communication and isolation between the first transmission chamber and the second transmission chamber.

8. The processing device according to claim 5, characterized in that The second transmission chamber is a vacuum chamber, and the vacuum degree of the second transmission chamber is lower than the vacuum degree of the first transmission chamber.

9. The processing device according to claim 8, characterized in that The vacuum degree range of the first transmission cavity is less than or equal to 150 mTorr; the vacuum degree range of the second transmission cavity is less than or equal to 100 mTorr.

10. The processing device according to claim 5, characterized in that The dew point temperature of the second transmission chamber ranges from -100°C to -80°C.

11. The processing device according to claim 5, characterized in that The wet cleaning chamber includes: a first wet cleaning chamber and a second wet cleaning chamber, and the first wet cleaning chamber and the second wet cleaning chamber are respectively connected to the second transmission chamber.

12. The processing device according to claim 1, characterized in that The processing device further includes: a wafer storage area, the wafer storage area is connected to the first transmission cavity, and the wafer storage area is arranged on a side wall of the first transmission cavity.

13. The processing device according to claim 1, characterized in that The cross-sectional shape of the first transmission cavity along the horizontal direction includes: rectangle, pentagon, circle or hexagon.

14. A method for forming a surface acoustic wave resonator device, using the processing device according to any one of claims 1 to 13, characterized in that: include: Obtaining a semiconductor structure, the semiconductor structure comprising: a piezoelectric layer, an interdigital material layer located on a surface of the piezoelectric layer, and a patterned photoresist layer located on a surface of the interdigital material layer; In a dry etching chamber, the patterned photoresist layer is used as a mask and the interdigital material layer is etched by a dry etching process to form a plurality of interdigital electrodes; After the dry etching process, the semiconductor structure is cleaned in a wet cleaning chamber.

15. The method for forming a surface acoustic wave resonator device according to claim 14, characterized in that: The process parameters of the dry etching process include: the etching gas includes Cl2, BCl3, Ar, N2, CHF3 and C2H4.

16. The method for forming a surface acoustic wave resonator device according to claim 14, wherein: The material of the interdigital material layer includes aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.

17. The method for forming a surface acoustic wave resonator device according to claim 14, wherein: The wet cleaning chamber comprises: a first wet cleaning chamber and a second wet cleaning chamber. After the dry etching process, the semiconductor structure is first cleaned in the first wet cleaning chamber, and the semiconductor structure is second cleaned in the second wet cleaning chamber.

18. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: The semiconductor structure is first cleaned in a first wet cleaning chamber, including: introducing nitrogen or an inert gas into the first wet cleaning chamber, wherein the inert gas includes argon or helium; and the semiconductor structure is sprayed and rinsed with deionized water and then dried.

19. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: The semiconductor structure is subjected to a second cleaning in a second wet cleaning chamber, including: introducing nitrogen or an inert gas into the second wet cleaning chamber, wherein the inert gas includes argon or helium; and the semiconductor structure is sprayed and rinsed with a cleaning liquid and then dried.

20. The method for forming a surface acoustic wave resonator device according to claim 17, wherein: Also includes: After the dry etching process, the semiconductor structure is ashed in an ashing chamber to remove the patterned photoresist layer.

21. The method for forming a surface acoustic wave resonator device according to claim 20, characterized in that: After the first cleaning is performed, the second cleaning is performed; after the second cleaning is performed, the semiconductor structure is ashed in an ashing chamber.

22. The method for forming a surface acoustic wave resonator device according to claim 21, characterized in that: Also includes: The semiconductor structure is transferred to the dry etching chamber via the first transfer chamber for dry etching; After dry etching, the semiconductor structure is transferred to the first wet cleaning chamber via the first transfer chamber and the second transfer chamber for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber via the second transfer chamber for second cleaning; after the second cleaning, the semiconductor structure is transferred to the ashing chamber via the second transfer chamber and the first transfer chamber for ashing.

23. The method for forming a surface acoustic wave resonator device according to claim 20, wherein: After the ashing treatment, the first cleaning is performed; after the first cleaning, the second cleaning is performed.

24. The method for forming a surface acoustic wave resonator device according to claim 23, characterized in that: Also includes: The semiconductor structure is transferred to the dry etching chamber via the first transfer chamber for dry etching; After dry etching, the semiconductor structure is transferred to the ashing chamber via the first transfer chamber for ashing treatment; After the ashing process, the semiconductor structure is transferred to the first wet cleaning chamber via the first transfer chamber and the second transfer chamber for first cleaning; after the first cleaning, the semiconductor structure is transferred to the second wet cleaning chamber via the second transfer chamber for second cleaning.

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