Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the following steps: providing a substrate; forming a first epitaxial layer with a first doping type on the substrate; forming an injection region with a first doping type in the first epitaxial layer, wherein the doping concentration of the injection region is greater than that of the first epitaxial layer; forming a second epitaxial layer with a first doping type on the first epitaxial layer; forming a base region with a second doping type in the second epitaxial layer; forming an emitter region with a first doping type in the base region; a collector of the first doping type is formed in the second epitaxial layer away from the base region, the doping concentration of the collector is larger than that of the second epitaxial layer, and the injection region is located between the base region and the collector in the horizontal direction. According to the forming method provided by the embodiment of the invention, high gain and high performance of the finally formed semiconductor structure can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor preparation, and in particular to a semiconductor structure and a forming method thereof. Background Art

[0002] Bipolar junction transistor (BJT) is an important semiconductor device in semiconductor integrated circuits. Bipolar junction transistor has an amplification effect and is widely used in various circuit designs in the industrial and consumer electronics fields, such as detection circuits, rectifier circuits, amplifier circuits, switching circuits, voltage stabilization circuits, signal modulation circuits, etc.

[0003] According to the different structures of bipolar junction transistors, bipolar junction transistors can be divided into two types: NPN type and PNP type. Bipolar junction transistors are also called semiconductor triodes, and have three external leads: collector, emitter and base. The collector is led from the collector region of the bipolar junction transistor, the emitter is led from the emitter region of the bipolar junction transistor, and the base is led from the base region of the bipolar junction transistor.

[0004] However, the bipolar junction transistor provided by the prior art has the problem of low gain. Summary of the invention

[0005] The technical problem solved by the present invention is to provide a semiconductor structure and a method for forming the same, which can achieve higher gain and better performance of the semiconductor structure.

[0006] To solve the above technical problems, an embodiment of the present invention provides a method for forming a semiconductor structure, including: providing a substrate; forming a first epitaxial layer with a first doping type on the substrate; forming an injection region with the first doping type in the first epitaxial layer, the doping concentration of the injection region is greater than the doping concentration of the first epitaxial layer; forming a second epitaxial layer with the first doping type on the first epitaxial layer; forming a base region with the second doping type in the second epitaxial layer; forming an emitter region with the first doping type in the base region; forming a collector with the first doping type in the second epitaxial layer away from the base region, the doping concentration of the collector is greater than the doping concentration of the second epitaxial layer, and the injection region is located between the base region and the collector in the horizontal direction.

[0007] Optionally, the doping concentration of the injection region is greater than the doping concentration of the collector, and the doping concentration of the injection region is 1E16-4E16 atoms / cm 3 .

[0008] Optionally, the thickness of the injection region is 0.2 to 0.3 microns.

[0009] Optionally, the method further includes: forming a base electrode having a second doping type in the base region, wherein the doping concentration of the base electrode is greater than the doping concentration of the base region, and the base electrode is spaced apart from the emitter region in a horizontal direction.

[0010] Optionally, after forming the base, the method further includes: forming a first isolation structure in the base region, wherein the first isolation structure is located between the emitter region and the base.

[0011] Optionally, the method for forming the first isolation structure in the base region includes: etching the base region to form a first trench between the base and the emitter region; and filling the first trench with a first isolation material to form the first isolation structure.

[0012] Optionally, the first isolation material includes polysilicon or silicon dioxide.

[0013] Optionally, the first doping type is N-type doping; and the second doping type is P-type doping.

[0014] Optionally, the doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions; the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

[0015] Correspondingly, an embodiment of the present invention also provides a semiconductor structure formed by the above-mentioned formation method, comprising: a substrate; a first epitaxial layer having a first doping type, the first epitaxial layer being located on the substrate; an implantation region having a first doping type, the implantation region being located in the first epitaxial layer, the doping concentration of the implantation region being greater than the doping concentration of the first epitaxial layer; a second epitaxial layer having a first doping type, the second epitaxial layer being located on the first epitaxial layer; a base region having a second doping type, the base region being located in the second epitaxial layer; an emitter region having a first doping type, the emitter region being located in the base region; a collector having a first doping type, the collector being located in the second epitaxial layer away from the base region, the doping concentration of the collector being greater than the doping concentration of the second epitaxial layer, and the implantation region being located between the base region and the collector in the horizontal direction.

[0016] Optionally, the doping concentration of the injection region is greater than the doping concentration of the collector, and the doping concentration of the injection region is 1E16-4E16 atoms / cm 3 .

[0017] Optionally, the thickness of the injection region is 0.2 to 0.3 microns.

[0018] Optionally, it further includes: a base having a second doping type, the base being located in the base region, the doping concentration of the base being greater than the doping concentration of the base region, and the base being spaced apart from the emitter region in a horizontal direction.

[0019] Optionally, it further includes: a first isolation structure, wherein the first isolation structure is located in the base region, and the first isolation structure is located between the emitter region and the base.

[0020] Optionally, the first doping type is N-type doping; and the second doping type is P-type doping.

[0021] Optionally, the doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions; the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

[0022] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0023] The formation method provided by the technical solution forms an injection region in the first epitaxial layer. The doping type of the injection region is the same as the doping type of the first epitaxial layer, and the doping concentration is higher than that of the first epitaxial layer. The first epitaxial layer and the second epitaxial layer are equivalent to the collector region. Subsequently, a base region, an emitter region and a collector are formed in the collector region. The injection region is located between the base region and the collector in the horizontal direction. The injection region has a high doping concentration and a low resistance, which can allow carriers to pass through the injection region quickly and concentratedly, thereby increasing the collector current and achieving high gain and high performance of the formed semiconductor structure.

[0024] The semiconductor structure provided by the present technical solution adds an injection region in the first epitaxial layer, the injection region is located between the base region and the collector in the horizontal direction, the doping type of the injection region is the same as the doping type of the first epitaxial layer, and the doping concentration is higher than that of the first epitaxial layer. When carriers move in the first epitaxial layer and the second epitaxial layer, due to the low resistance of the injection region, the carriers can pass through the injection region more quickly and concentratedly, thereby increasing the current amplification factor of the semiconductor structure and achieving high gain and high performance of the formed semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figures 1 to 7 It is a schematic structural diagram corresponding to each step of a semiconductor structure forming process in one embodiment of the present invention. DETAILED DESCRIPTION

[0026] As described in the background technology, bipolar junction transistors are divided into two types: NPN type and PNP type. Taking the NPN type BJT transistor as an example, when the BJT is working normally, the emitter junction formed by the base and the emitter is forward biased, and the electrons of the emitter are injected into the base region; at the same time, under the action of the reverse electric field formed by the base and the collector, most of the electrons will be injected into the collector. Since the base region is generally very thin and the doping concentration is low, the base current is very small, and the collector current is formed after amplification. Since there is a large distance between the emitter region and the collector of the current BJT structure, there is a large resistance, so the BJT transistor has a low gain problem.

[0027] In order to solve the above technical problems, the embodiment of the present invention provides a semiconductor structure and a method for forming the same. First, the first epitaxial layer and the second epitaxial layer are formed in two steps. The first epitaxial layer and the second epitaxial layer are used as the collector region as a whole. Before forming the second epitaxial layer, an injection region is first formed in the first epitaxial layer to reduce the difficulty of ion injection control when forming the injection region, so that the position of the injection region is more accurate, the process is simple, and the cost is low. In addition, the doping type of the formed injection region is the same as that of the first epitaxial layer, and the doping concentration is higher than that of the first epitaxial layer. The formed injection region has the characteristics of low resistance. In the process of carrier migration, the injection region provides a low-resistance channel, which can enable more carriers to enter the collector region from the base region, thereby improving the current amplification factor of the semiconductor structure and achieving high gain and high performance.

[0028] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0029] Figures 1 to 7 It is a schematic structural diagram corresponding to each step of a semiconductor structure forming process in one embodiment of the present invention.

[0030] refer to Figure 1 , providing a substrate 100.

[0031] The substrate 100 is one of monocrystalline silicon, polycrystalline silicon, amorphous silicon or silicon on insulator; the substrate 100 may also be a Si substrate, a Ge substrate, a GeSi substrate or a GaAs substrate. The substrate 100 may be an N-type substrate, a P-type substrate or an intrinsic substrate. In this embodiment, the substrate 100 is a P-type substrate.

[0032] Continue to refer Figure 1 , a buried layer 101 is formed in the substrate 100, and the buried layer 101 has N-type doping ions.

[0033] The N-type doping ions include phosphorus ions or arsenic ions.

[0034] In this embodiment, the method for forming the buried layer 101 includes: forming a first mask layer (not shown) on the surface of the substrate 100; performing N-type ion implantation on the substrate 100 using the first mask layer as a mask; removing the first mask layer and performing an annealing process to form the buried layer 101 in the substrate 100.

[0035] In this embodiment, the buried layer 101 is used to isolate the transistor structure to be formed subsequently from the substrate 100 .

[0036] refer to Figure 2 , a first epitaxial layer 200 is formed on the substrate 100, wherein the first epitaxial layer 200 has a first doping type.

[0037] In this embodiment, the first doping type is N-type doping, and the doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions.

[0038] Specifically, the first doping type is determined according to the type of the bipolar junction transistor to be formed. Specifically, when the formed semiconductor structure is an NPN transistor, the first doping type is N-type doping; when the formed semiconductor structure is a PNP transistor, the first doping type is P-type doping.

[0039] In this embodiment, the first epitaxial layer 200 is formed by an epitaxial process, so that the overall thickness is uniform and easy to control, which is beneficial to improving the performance of the semiconductor structure.

[0040] In this embodiment, the thickness of the first epitaxial layer 200 is 2 micrometers. In other embodiments, the thickness of the first initial epitaxial layer 200 can be appropriately adjusted to obtain different breakdown voltages of the device.

[0041] The doping concentration of the first epitaxial layer 200 is 1E14-4E14 atoms / cm 3 .

[0042] Continue to refer Figure 2 , ion implantation is performed on the first epitaxial layer 200 to form an implantation region 201 in the first epitaxial layer 200 .

[0043] In this embodiment, the method for forming the injection region 201 includes: forming a second mask layer (not shown) on the first epitaxial layer 200, the second mask layer being used to define the size and position of the injection region to be formed; using the second mask layer as a mask, ion implanting the first epitaxial layer 200 to form the injection region 201 in the first epitaxial layer 200; annealing the first initial epitaxial layer 200; and removing the second mask layer.

[0044] In this embodiment, the doping type of the implanted region 201 is the same as the doping type of the first epitaxial layer 200 , both of which are N-type doping.

[0045] In this embodiment, the doping concentration of the implantation region 201 is greater than the doping concentration of the first epitaxial layer 200, and the doping concentration of the implantation region 201 is 1E16-4E16 atoms / cm 3 The doping concentration has an impact on the resistance. The doping concentration of the injection region 201 is high, and a low resistance channel is formed in the collector region. After the BJT transistor structure is subsequently formed, it is beneficial for carriers to move from the base region to the collector, which can increase the current amplification factor and achieve high gain of the semiconductor structure without causing much impact on the breakdown voltage of the semiconductor structure.

[0046] The thickness of the implantation region 201 is 0.2-0.3 micrometers. If the thickness of the implantation region 201 is too large, the breakdown voltage of the device will decrease. Setting this thickness range can reduce the impact on the breakdown voltage of the device while reducing the on-resistance.

[0047] refer to Figure 3 , a second epitaxial layer 202 is formed on the first epitaxial layer 200 , and the second epitaxial layer 202 has a first doping type.

[0048] In this embodiment, the second epitaxial layer 202 is N-type doped.

[0049] In this embodiment, the doping concentration of the second epitaxial layer 202 is the same as the doping concentration of the first epitaxial layer 200 .

[0050] In this embodiment, the second epitaxial layer 202 is formed by an epitaxial process. The epitaxial process can make the second epitaxial layer 202 have a uniform thickness. The first epitaxial layer 200 and the second epitaxial layer 202 together constitute a collector region. The first epitaxial layer 200 and the second epitaxial layer 202 have a uniform thickness and can withstand higher voltages.

[0051] In this embodiment, the thickness of the second epitaxial layer 202 is 1.2 microns.

[0052] refer to Figure 4 , a base region 203 is formed in the second epitaxial layer 202, and the base region 203 has a second doping type.

[0053] In this embodiment, the second doping type is P-type doping, and the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

[0054] In this embodiment, the method for forming the base region 203 includes: forming a third mask layer (not shown) on the second epitaxial layer 202, the third mask layer being used to define the size and position of the base region to be formed; using the third mask layer as a mask, performing P-type ion implantation on the second epitaxial layer 202; removing the third mask layer to form the base region 203 in the second epitaxial layer 202.

[0055] In this embodiment, the bottom of the base region 203 is higher than the bottom of the second epitaxial layer 202 .

[0056] Continue to refer Figure 4 , an emitter region 204 is formed in the base region 203, and the emitter region 204 has a first doping type.

[0057] In this embodiment, the emitter region 204 is N-type doped, and the doping concentration of the emitter region 204 is higher than the doping concentration of the second epitaxial layer 202 .

[0058] The doping concentration of the emitter region 204 is 1E19-5E19 atoms / cm 3 .

[0059] In this embodiment, the bottom of the emitter region 204 is higher than the bottom of the base region 203 , and the emitter region 204 is close to one side of the base region 203 .

[0060] In this embodiment, the method for forming the emitter region 204 includes: forming a fourth mask layer (not shown) on the second epitaxial layer 202, the fourth mask layer being used to define the size and position of the emitter region to be formed; using the fourth mask layer as a mask, performing N-type ion implantation on the second epitaxial layer 202; removing the fourth mask layer to form the emitter region 204 in the second epitaxial layer 202.

[0061] Continue to refer Figure 4 , further comprising: forming a collector 205 in the second epitaxial layer 202 , the doping type of the collector 205 being consistent with the doping type of the second epitaxial layer 202 , and the doping concentration of the collector 205 being greater than the doping concentration of the second epitaxial layer 202 .

[0062] The doping concentration of the collector electrode 205 is 2E17-6E17 atoms / cm 3 .

[0063] In this embodiment, the collector 205 is located on a side of the second epitaxial layer 202 away from the base region 203 .

[0064] In this embodiment, in the horizontal direction, the injection region 201 is located between the base region 203 and the collector 205. The injection region 201 provides a low-resistance channel for the movement of carriers from the base region 203 to the collector 205, and the movement of carriers is more concentrated, which increases the carriers moving from the base region 203 to the collector 205, increases the collector current, and thus can improve the current amplification factor.

[0065] It should be noted that the horizontal direction in the embodiment of the present invention refers to a direction parallel to the surface of the substrate 100 and parallel to the flow direction of the current.

[0066] In this embodiment, in the direction perpendicular to the substrate 100 , the end of the implantation region 201 partially overlaps with the base region 203 and the collector 205 .

[0067] In this embodiment, the method further includes: forming a base 206 on the base region 203 , wherein the doping type of the base 206 is the same as the doping type of the base region 203 , and the doping concentration of the base 206 is higher than the doping concentration of the base region 203 .

[0068] In this embodiment, the doping concentration of the base 206 is 1E18-6E18 atoms / cm 3 .

[0069] In this embodiment, the base 206 and the emitter region 204 are spaced apart in a horizontal direction.

[0070] The collector electrode 205 serves as the lead-out terminal of the collector region, and the collector region is electrically connected to a subsequently formed metal electrode through the collector electrode 205, and then electrically connected to other semiconductor devices or external circuits; the base electrode 206 serves as the lead-out terminal of the base region 203, and the base region 203 is electrically connected to a subsequently formed metal electrode through the base electrode 206, and then electrically connected to other semiconductor devices or external circuits.

[0071] In this embodiment, after the base region 203, the emitter region 204, the collector 205 and the base 206 are formed, an annealing process is further included to activate the implanted ions and diffuse the implanted ions to a certain extent.

[0072] refer to Figure 5 , a first isolation structure 207 is formed in the base region 203 , and the first isolation structure 207 is located between the emitter region 204 and the base 206 .

[0073] In this embodiment, the first isolation structure 207 can reduce the parasitic parameters of the base region 203, thereby facilitating the improvement of the current amplification factor of the semiconductor structure. The PN junction between the base 206 and the emitter 204 will generate a parasitic resistance, which will form a crosstalk capacitor and affect the high-frequency characteristics of the transistor. By providing the first isolation structure 207 between the base 206 and the emitter 204, the contact area between the base 206 and the emitter 204 can be effectively reduced, thereby reducing the parasitic parameters and improving the performance of the semiconductor device.

[0074] In this embodiment, the method for forming the first isolation structure 207 includes: forming a fifth mask layer (not shown) on the base region 203, the base region 203 also covering the surface of the second epitaxial layer 202, the fifth mask layer defining the position and size of the first isolation structure to be formed; using the fifth mask layer as a mask, etching the base region 203, and forming a first trench (not shown) in the base region 203 between the emitter region 204 and the base 206; filling the first trench with a first isolation material, and forming a first isolation structure 207 in the base region 203.

[0075] In this embodiment, the base region 203 is etched using a dry etching process.

[0076] In this embodiment, the first isolation material is polysilicon; polysilicon is used as the material of the first isolation structure. Polysilicon has weak conductivity and can conduct electricity in a high voltage environment, thereby optimizing the peak electric field of the isolation structure.

[0077] In other embodiments, the first isolation material may also be silicon dioxide.

[0078] The bottom of the first isolation structure 207 in the base region 203 is lower than the bottom of the emitter 204 , which can enhance the isolation effect.

[0079] refer to Figure 6 , further comprising: forming a second isolation structure 208 in the first epitaxial layer 200 and the second epitaxial layer 202 , wherein the bottom of the second isolation structure 208 is higher than the bottom of the first epitaxial layer 200 and lower than the bottom of the second epitaxial layer 202 .

[0080] In this embodiment, the second isolation structure 208 is used to isolate the collector region and the substrate 100 .

[0081] In this embodiment, the method for forming the second isolation structure 208 includes: forming a sixth mask layer (not shown) on the second epitaxial layer 202, the sixth mask layer being used to define the position and size of the second isolation structure 208 to be formed; using the sixth mask layer as a mask, etching the second epitaxial layer 202 and the first epitaxial layer 200, and forming a second trench (not shown) in the second epitaxial layer 202 and the first epitaxial layer 200; and filling the second trench with a second isolation material to form a second isolation structure 208.

[0082] In this embodiment, the second isolation material includes silicon dioxide; in other embodiments, the second isolation material also includes nitride.

[0083] refer to Figure 7 , further comprising: forming a metal electrode 209 on the second epitaxial layer 202 , wherein the metal electrode 209 is electrically connected to the emitter region 204 , the base 206 and the collector 206 .

[0084] In this embodiment, the method for forming the metal electrode 209 includes: forming a seventh mask layer (not shown) on the second epitaxial layer 202, the second mask layer exposing the surfaces of the emitter region 204, the base 206 and the collector 206; forming a metal material layer (not shown) on the second mask layer, the metal material layer covering the surfaces of the emitter region 204, the base 206 and the collector 206; etching the metal material layer to form a metal electrode 209 on the surfaces of the emitter region 204, the base 206 and the collector 206.

[0085] In this embodiment, an epitaxial process is used to form a metal material layer on the second mask layer.

[0086] In this embodiment, the material of the metal electrode 209 is aluminum; in other embodiments, the material of the metal electrode 209 is copper, nickel, or tungsten.

[0087] Correspondingly, in an embodiment of the present invention, a semiconductor structure is also provided. Please continue to refer to Figure 7The semiconductor structure includes: a substrate 100; a first epitaxial layer 200 with a first doping type, the first epitaxial layer 200 is located on the substrate 100; an implantation region 201 with a first doping type, the implantation region 201 is located in the first epitaxial layer 200, and the doping concentration of the implantation region 201 is greater than the doping concentration of the first epitaxial layer 200; a second epitaxial layer 202 with a first doping type, the second epitaxial layer 202 is located on the first epitaxial layer 201; a base region 203 with a second doping type, the base region 203 is located in the second epitaxial layer 202; an emitter region 204 with a first doping type, the emitter region 204 is located in the base region 203; a collector 205 with a first doping type, the collector 205 is located in the second epitaxial layer 202 away from the base region 203, the doping concentration of the collector 205 is greater than the doping concentration of the second epitaxial layer 202, and the implantation region 201 is located between the base region 203 and the collector 205 in the horizontal direction.

[0088] In this embodiment, a buried layer 101 is further included. The buried layer 101 is located in the substrate 100 and has N-type doping ions.

[0089] In this embodiment, the first doping type is N-type doping, the doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions; the second doping type is P-type doping, the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

[0090] In this embodiment, the doping concentration of the implantation region 201 is greater than the doping concentration of the collector 205. The doping concentration of the implantation region 201 is 1E16-4E16 atoms / cm 3 .

[0091] The thickness of the implantation region 201 is 0.2-0.3 micrometers.

[0092] In this embodiment, it also includes: a base 206 of a second doping type, the base 206 is located in the base region 203, the doping concentration of the base 206 is greater than the doping concentration of the base region 203, and the base 206 is spaced apart from the emitter region 204 in the horizontal direction.

[0093] In this embodiment, the first isolation structure 207 is further included. The first isolation structure 207 is located in the base region 203 . The first isolation structure 207 is located between the emitter region 204 and the base 206 .

[0094] In this embodiment, it also includes: a second isolation structure 208 , which is located in the first epitaxial layer 200 and the second epitaxial layer 202 , and the bottom of the second isolation structure 208 is higher than the bottom of the first epitaxial layer 200 and lower than the bottom of the second epitaxial layer 202 .

[0095] In this embodiment, it also includes: a metal electrode 209 , which is located on the surfaces of the emitter region 204 , the base 206 and the collector 206 .

[0096] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for forming a semiconductor structure, characterized in that: include: providing a substrate; forming a first epitaxial layer having a first doping type on the substrate; forming an implantation region having a first doping type in the first epitaxial layer, wherein the doping concentration of the implantation region is greater than the doping concentration of the first epitaxial layer; forming a second epitaxial layer having a first doping type on the first epitaxial layer; forming a base region having a second doping type in the second epitaxial layer; forming an emitter region having a first doping type in the base region; A collector having a first doping type is formed in the second epitaxial layer away from the base region, wherein the doping concentration of the collector is greater than the doping concentration of the second epitaxial layer, and the implantation region is located between the base region and the collector in a horizontal direction.

2. The method for forming a semiconductor structure according to claim 1, wherein: The doping concentration of the implanted region is 1E16-4E16 atoms / cm 3 .

3. The method for forming a semiconductor structure according to claim 1, wherein: The thickness of the injection region is 0.2-0.3 micrometers.

4. The method for forming a semiconductor structure according to claim 1, wherein: Also includes: A base electrode with a second doping type is formed in the base region, the doping concentration of the base electrode is greater than the doping concentration of the base region, and the base electrode is spaced apart from the emitter region in a horizontal direction.

5. The method for forming a semiconductor structure according to claim 4, wherein: After forming the base, the method further includes: forming a first isolation structure in the base region, wherein the first isolation structure is located between the emitter region and the base.

6. The method for forming a semiconductor structure according to claim 5, wherein: The method for forming the first isolation structure in the base region comprises: etching the base region to form a first trench between the base and the emitter region; and filling the first trench with a first isolation material to form a first isolation structure.

7. The method for forming a semiconductor structure according to claim 6, wherein: The first isolation material includes polysilicon or silicon dioxide.

8. The method for forming a semiconductor structure according to claim 1, wherein: The first doping type is N-type doping; the second doping type is P-type doping.

9. The method for forming a semiconductor structure according to claim 8, wherein: The doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions; the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

10. A semiconductor structure, characterized in that: include: substrate; a first epitaxial layer having a first doping type, the first epitaxial layer being located on the substrate; An implantation region having a first doping type, the implantation region being located in the first epitaxial layer, and the doping concentration of the implantation region being greater than the doping concentration of the first epitaxial layer; a second epitaxial layer having a first doping type, the second epitaxial layer being located on the first epitaxial layer; a base region having a second doping type, the base region being located in the second epitaxial layer; an emitter region having a first doping type, the emitter region being located in the base region; A collector having a first doping type is located in the second epitaxial layer away from the base region, the doping concentration of the collector is greater than the doping concentration of the second epitaxial layer, and the injection region is located between the base region and the collector in a horizontal direction.

11. The semiconductor structure according to claim 10, characterized in that The doping concentration of the injection region is greater than the doping concentration of the collector, and the doping concentration of the injection region is 1E16-4E16 atoms / cm 3 .

12. The semiconductor structure according to claim 10, wherein: The thickness of the injection region is 0.2-0.3 micrometers.

13. The semiconductor structure according to claim 10, wherein: Also includes: A base electrode having a second doping type is located in the base region, the doping concentration of the base electrode is greater than the doping concentration of the base region, and the base electrode is spaced apart from the emitter region in a horizontal direction.

14. The semiconductor structure according to claim 13, wherein: Also includes: A first isolation structure is located in the base region and between the emitter region and the base.

15. The semiconductor structure according to claim 10, wherein: The first doping type is N-type doping; the second doping type is P-type doping.

16. The semiconductor structure according to claim 15, wherein: The doping ions of the N-type doping are N-type ions, and the N-type ions include phosphorus ions or arsenic ions; the doping ions of the P-type doping are P-type ions, and the P-type ions include boron ions or indium ions.

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