HgCdTe double-layer component heterogeneous planar junction infrared detector and preparation method thereof

Abstract

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

Description

Technical Field

[0001] The invention belongs to the technical field of mercury cadmium telluride infrared detectors, and in particular relates to a P-on-n type mercury cadmium telluride double-layer component heterogeneous planar junction detector based on mercury-rich vertical liquid phase epitaxy technology and a preparation method thereof. Background Art

[0002] Infrared focal plane detectors have been widely used in military, industrial, environmental, and medical fields. Among the many infrared detection materials, mercury cadmium telluride materials have the advantage of high quantum efficiency. By changing the component x, its bandgap width meets the infrared detection of the three atmospheric windows of 1-3μm, 3-5μm, and 8-14μm. It has the advantage of high quantum efficiency and obvious advantages in basic physical properties. Mercury cadmium telluride infrared focal plane detectors have developed to the third generation, with main features including large array, very long wave, multi-color, HOT devices, etc., and occupy a dominant position in the field of high-end infrared detection.

[0003] The technical route of HgCdTe infrared detectors mainly includes two structures: N-on-p and P-on-n. In the current more mature device processes, the quantum efficiency of infrared detectors is above 80%, or even 100%. From the perspective of light signals alone, there is little potential to significantly improve device performance. In contrast, by reducing dark current, the performance of HgCdTe infrared detectors can be improved by several orders of magnitude. Among the two structures, P-on-n infrared detectors have obvious advantages in reducing dark current, with a reduction of 2 orders of magnitude. The P-on-n technical route includes planar homojunctions (injection junctions) and table heterojunctions (growth junctions).

[0004] In the mesa heterojunction technology route, the HgCdTe material is doped with As in situ, with a high activation rate. The n-type HgCdTe material doped with In is first grown on the substrate material by liquid phase epitaxy, and then the p-type HgCdTe material doped with As is grown. After growth, a pn junction is formed by appropriate activation annealing. The n-type layer is the absorption layer with a thickness of generally more than 5μm, and the p-type layer is thinner, generally within 2μm. The Cd component content of the p-type layer is higher than that of the n-type layer, and the bandgap width is larger. The material is more stable, which is conducive to reducing tunneling current and noise, and its low-temperature performance is better than that of the homojunction. In the mesa heterojunction process route, the mercury cadmium telluride array detector needs to isolate the adjacent pixel pn junctions. Generally, an etching / corrosion process is used to isolate the p-type layer of each pixel. Damage to the mercury cadmium telluride material is difficult to avoid during the mesa preparation process. A large number of sidewall free surfaces will be introduced in the process. The surface needs to be finely passivated in the subsequent process. Compared with the planar junction route, the coverage and interface density of the sidewall passivation layer are worse than those of the planar junction, the passivation difficulty is higher, and the uniformity of mesa preparation is also difficult to control.

[0005] In the planar homojunction process, In-doped n-type HgCdTe material is grown on the substrate material by liquid phase epitaxy, and the P region is prepared by As implantation. The HgCdTe material after As ion implantation needs to be activated by a high-temperature annealing process to form a pn junction. The planar homo-heterojunction process cannot achieve surface band modulation in structure, and the defect density in the implantation area is high. A complex annealing process is required in the later stage to reduce the defect density in the implantation area. The process is difficult, and residual defects easily lead to an increase in dark current.

[0006] In order to circumvent the problem of high difficulty in surface passivation in the planar homojunction process, a planar heterojunction process was developed. The MBE technology was used to prepare a double-layer component heterogeneous material with a high resistance layer on the surface. The As ion implantation process was used to prepare the P-on-n structure. The device process was the same as the planar homojunction process. In the planar heterojunction process based on MBE technology, the material has a high dislocation density and is difficult to control impurities. In the subsequent annealing activation process, it is easy to cause unexpected impurity diffusion problems. Summary of the invention

[0007] The embodiment of the present invention provides a mercury cadmium telluride double-layer component heterojunction planar detector and a preparation method thereof, so as to solve the difficulty in preparing the mercury cadmium telluride table heterojunction process and further improve the performance of the mercury cadmium telluride planar junction detector.

[0008] A mercury cadmium telluride double-layer component heterogeneous planar junction detector provided according to an embodiment of the present invention comprises a stacked substrate material layer, an n-type absorption layer, an n-type wide bandgap heterogeneous layer, a passivation layer and a contact electrode layer;

[0009] The n-type wide bandgap heterogeneous layer is a wide bandgap heterogeneous layer prepared on the surface of the n-type absorption layer based on the mercury-rich vertical liquid phase epitaxy technology, and is a residual impurity n-type material;

[0010] The passivation layer covers at least a portion of the area of ​​the isolation region and the p-type injection region in the orthographic projection direction, and the portion of the passivation layer not covering the p-type injection region is a contact hole;

[0011] The contact electrode layer contacts the p-type injection region, and the contact electrode positive projection area is larger than and covers the contact hole.

[0012] According to the HgCdTe double-layer component heterojunction detector based on mercury-rich vertical liquid phase epitaxy technology of the embodiment of the present invention, the interface interdiffusion is realized by the growth process of the n-type wide bandgap heterogeneous layer, and the HgCdTe p-on-n planar heterojunction device is realized by As ion implantation. Compared with ordinary table p-on-n heterojunction devices, it can effectively avoid the damage to the HgCdTe material caused by the table preparation process (dry etching or wet etching), and avoid leakage caused by the table table passivation layer coverage effect and interface difference. Compared with ordinary arsenic (As) implanted planar p-on-n homojunction devices, the heterojunction material structure formed by band modulation can effectively suppress tunneling current and surface leakage, which is beneficial to reduce dark current and improve device performance. Compared with planar heterojunction devices based on MBE technology, it has high impurity control ability and good interface diffusion effect.

[0013] According to some embodiments of the present invention, the materials of the n-type absorption layer and the n-type wide bandgap heterogeneous layer are both Hg 1-x Cd x Te, the value of x is less than or equal to 0.6.

[0014] According to some embodiments of the present invention, the n-type absorption layer is an In-doped material, the In doping concentration ranges from 1E14cm-3 to 5E15cm-3, and the Hg 1-x Cd x The value of x in Te is 0.1 to 0.4.

[0015] According to some embodiments of the present invention, the thickness of the passivation layer ranges from 500 angstroms to 20,000 angstroms, and the selected materials include but are not limited to CdTe, ZnS, SiN, and BN.

[0016] According to some embodiments of the present invention, the n-type wide bandgap heterogeneous layer adopts a mercury-rich vertical liquid phase epitaxial process, and the remaining impurity n-type material, Hg 1-x Cd x The x value in Te is 0.23 to 0.6, and the x value is larger than the x value of the absorption layer.

[0017] The HgCdTe double-layer component heterojunction detector and preparation method based on mercury-rich vertical liquid phase epitaxy technology provided in the embodiments of the present invention are used to prepare P-on-n type HgCdTe planar heterojunction detectors of some embodiments of the present invention, and the method comprises:

[0018] Growing an n-type absorption layer on the substrate material layer;

[0019] Performing secondary growth on the n-type absorption layer to prepare an n-type wide bandgap heterogeneous layer;

[0020] Photolithography is performed on the surface of the n-type wide bandgap heterogeneous layer, and after development, an injection region and an isolation region protected by photoresist are formed, and the injection region is leaked;

[0021] As ions are implanted on the surface of the material, and after implantation, the photoresist is removed, and activation annealing is performed to form a P region, which is separated by an n-type isolation region to form an independent pixel;

[0022] Growing a passivation layer on the surface of the n-type wide bandgap heterogeneous layer by magnetron sputtering, thermal evaporation or MBE;

[0023] Perform photolithography on the surface of the passivation layer, expose the contact hole area after development, and remove the passivation layer by etching or corrosion process outside the photoresist protection area to prepare the contact hole;

[0024] Using a thermal evaporation process to prepare a metal layer for contact electrodes;

[0025] The material is immersed in a stripping solution, and the photoresist and the surface metal layer of the protection zone material are removed by a stripping process to obtain a P-on-n type mercury cadmium telluride planar heterojunction detector;

[0026] According to the P-on-n type HgCdTe planar heterojunction detector of the embodiment of the present invention, the interfacial diffusion is realized by the growth process of the n-type wide bandgap heterogeneous layer, and the HgCdTe p-on-n planar heterojunction device is realized by As ion implantation. Compared with the ordinary table p-on-n heterojunction device, it can effectively avoid the damage to the HgCdTe material caused by the table preparation process (dry etching or wet etching), and avoid leakage caused by the table table passivation layer coverage effect and interface difference. Compared with the ordinary arsenic (As) implanted planar p-on-n homojunction device, the heterojunction material structure formed by band modulation can effectively suppress the tunneling current and surface leakage, which is beneficial to reduce the dark current and improve the device performance; compared with the double-layer component heterogeneous material prepared by MBE technology, the mercury-rich liquid phase epitaxial HgCdTe process can control the remaining impurities at 8E13 / cm 3 level, MBE technology can generally only be controlled at E14 / cm 3 According to some embodiments of the present invention, the materials of the n-type absorption layer and the array p-type cap region are both Hg 1-x Cd x Te, the value of x is less than or equal to 0.6.

[0027] The beneficial effects of the present invention are:

[0028] After experimental comparison, thanks to the natural passivation effect of the surface heterogeneous layer and the band modulation structure, the dark current level of the device with this structure reaches Rule 22 (empirical formula for dark current of P-on-n device) level at low temperature, and the longest response wavelength of the device reaches 13.3 microns (77K). BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Schematic diagram of the structure of a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology according to an embodiment of the present invention.

[0030] Figure 2 It is a top view of a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology according to an embodiment of the present invention.

[0031] Figure 3 This is a schematic diagram of the structure of a HgCdTe double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S100 of an embodiment of the present invention.

[0032] Figure 4 This is a schematic diagram of the structure of a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S200 of an embodiment of the present invention.

[0033] Figure 5 This is a schematic diagram of the structure of a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S300 of an embodiment of the present invention.

[0034] Figure 6 This is a schematic diagram of a HgCdTe double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S400 according to an embodiment of the present invention.

[0035] Figure 7 This is a schematic diagram of the structure of a HgCdTe double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S500 of an embodiment of the present invention.

[0036] Figure 8 This is a schematic diagram of the structure of a HgCdTe double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S600 of an embodiment of the present invention.

[0037] Fig. 9 This is a schematic diagram of the structure of a HgCdTe double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology shown in step S700 of an embodiment of the present invention.

[0038] Fig.10 The flowchart is a method for preparing a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology according to an embodiment of the present invention.

[0039] Fig.11 It is the signal response diagram of the detector of the present invention.

[0040] Fig.12 Figure 2 shows the material composition and In impurity distribution.

[0041] The reference numerals in the figure are: 1-substrate material layer, 2-n-type absorption layer, 3-n-type wide bandgap heterogeneous layer, 4-P-type injection region, 5-passivation layer, 6-contact electrode layer, 7-photoresist, 8-metal layer. DETAILED DESCRIPTION

[0042] In order to make the purpose, content and advantages of the present invention more clear, the specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. The accompanying drawings constitute a part of this application and are used to illustrate the principles of the present invention.

[0043] In the related art, since HgCdTe multi-element and area array detectors need to isolate adjacent pixel pn junctions, heterojunction HgCdTe devices generally use a table process to isolate the p-type layer of each pixel. However, compared with the planar injection junction, the table preparation process of the device preparation of the table heterojunction is difficult, mainly reflected in the fact that it is difficult to avoid damage to the HgCdTe material during the table preparation process, and the coverage of the passivation layer on the side wall of the table is worse than the planar coverage, which can easily lead to surface leakage and device failure.

[0044] The present invention aims to solve the above technical problems to a certain extent, and provides a mercury cadmium telluride double-layer component heterogeneous planar junction detector based on mercury-rich vertical liquid phase epitaxy technology and a preparation method thereof.

[0045] like Figure 1 and Figure 2 As shown, the mercury cadmium telluride double-layer component heterojunction detector based on mercury-rich vertical liquid phase epitaxy technology provided in an embodiment of the present invention includes: a stacked substrate material layer 1, an n-type absorption layer 2, an n-type wide bandgap heterolayer 3, a p-type injection region 4, a passivation layer 5, and a contact electrode layer 6.

[0046] After the n-type wide bandgap heterogeneous layer 3 is grown, an array p-type injection region 4 is formed by photolithography, and an independent pixel is selectively injected into the n-type wide bandgap heterogeneous layer. In the actual device preparation process, detectors of different specifications and shapes can be formed by adjusting the shape and size of the photolithographic pattern. Figure 2 The rectangular area shown is for illustration only.

[0047] like Figure 1 and Figure 2 As shown, the passivation layer 5 covers the pixel isolation region and part of the p-type injection region 4 in the orthographic projection direction, and the uncovered part is the electrode contact hole.

[0048] According to the P-on-n type HgCdTe planar heterojunction detector of the embodiment of the present invention, the interfacial diffusion is realized by the growth process of the n-type wide bandgap heterogeneous layer, and the HgCdTe p-on-n planar heterojunction device is realized by As ion implantation. Compared with ordinary table p-on-n heterojunction devices, it can effectively avoid the damage to the HgCdTe material caused by the table preparation process (dry etching or wet etching), and avoid leakage caused by the poor coverage effect of the table passivation layer and the interface. Compared with ordinary arsenic (As) implanted planar p-on-n homojunction devices, the heterojunction material structure formed by band modulation can effectively suppress tunneling current and surface leakage, which is beneficial to reduce dark current and improve device performance. Compared with planar heterojunction devices based on MBE technology, it has high impurity control ability and good interface diffusion effect.

[0049] like Figure 1 and Figure 2 As shown, according to some embodiments of the present invention, the material of the n-type absorption layer 2 and the n-type wide bandgap heterogeneous layer 3 is Hg 1-x Cd x The value of Te,x is less than 0.6. The response wavelength is adjusted by adjusting the component (x value), thereby changing the response wavelength of the detector according to different detection requirements.

[0050] like Figure 1 and Figure 2 As shown, according to some embodiments of the present invention, the n-type absorption layer 2 is an In-doped material, the In doping concentration ranges from 1E14cm-3 to 5E15cm-3, the x value in Hg1-xCdxTe is 0.1 to 0.4, and the x value of the n-type wide bandgap heterolayer 3 is higher than the x value of the n-type absorption layer 2.

[0051] like Figure 1 and Figure 2 As shown, according to some embodiments of the present invention, the thickness of the passivation layer 5 ranges from 500 angstroms to 20,000 angstroms, and the selected materials include but are not limited to CdTe, ZnS, SiN, BN, and combinations of the above materials.

[0052] The method for preparing a mercury cadmium telluride double-layer component heterojunction planar detector based on mercury-rich vertical liquid phase epitaxy technology provided in an embodiment of the present invention is used to prepare a P-on-n type mercury cadmium telluride planar heterojunction detector of some embodiments of the present invention, and the method comprises:

[0053] S100: Figure 3 As shown, an n-type absorption layer 2 is grown on a substrate material layer 1 .

[0054] S200: Figure 4 As shown, a secondary growth is performed on the n-type absorption layer 2 to grow an n-type wide bandgap heterogeneous layer 3 .

[0055] S300: Figure 5 As shown, photolithography is performed on the n-type wide bandgap heterogeneous layer 3, and after development, the P-type implantation region 4 is exposed, and after As ion implantation, activation annealing is performed.

[0056] S400: Figure 6 As shown, a passivation layer 5 is prepared on the material surface by magnetron sputtering, thermal evaporation or MBE method.

[0057] S500: Figure 7 As shown, photolithography is performed on the surface of the passivation layer 5, and etching / corrosion is used to remove the passivation layer and a small portion of thin film material in the area where the photoresist leaks out, to prepare a contact hole, and then remove the photoresist.

[0058] S600: Figure 8 As shown, photolithography is performed on the surface of the material, and after development, the area where the contact electrode layer 6 needs to be grown is exposed.

[0059] S700: Fig. 9 As shown, the metal of electrode layer 8 is grown using a thermal evaporation process.

[0060] S800: Immerse the detector in a stripping solution, and through a stripping process, strip off the photoresist 7 and part of the metal layer 8 on the surface of the photoresist 7, and the remaining metal forms an electrode layer 6 to obtain Figure 1 The HgCdTe planar heterojunction detector is shown.

[0061] In some embodiments of the present invention, the n-type absorption layer 2 and the n-type wide bandgap heterogeneous layer are grown by mercury-rich vertical liquid phase epitaxy (VLPE), other impurities are not actively doped during growth, and the remaining impurities are n-type.

[0062] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined purpose, the present invention is described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0063] First, if Figure 3 As shown, the cadmium zinc telluride material is used as the substrate material layer, and the n-type absorption layer 2 is grown by LPE technology. 1-x Cd x The x value of Te is 0.23, and the n-type concentration is 1×10 14 cm -3 This process is an existing process, and the structure of this patent is prepared based on this material, see Fig.12 .

[0064] like Figure 4 As shown, secondary growth is performed on the n-type material, and a mercury-rich vertical liquid phase epitaxial process is used to prepare an n-type wide bandgap heterolayer. The Hg 1-x Cd xThe x value of Te is 0.31, which is higher than that of the n-type absorption layer. Fig.12 .

[0065] like Figure 5 As shown, photolithography is performed on the n-type wide bandgap heterogeneous layer, and the P-type injection region is leaked out after development, and As ion injection is performed, followed by activation annealing.

[0066] like Figure 6 As shown, a CdTe+ZnS composite passivation layer 5 is prepared on the material surface by a magnetron sputtering method, and the thickness of the passivation layer is 5000 angstroms.

[0067] like Figure 7 As shown, photolithography is performed on the surface of the passivation layer, and the passivation layer and a small portion of thin film material are removed in the area where the photoresist leaks out by using ICP etching / corrosion and other methods to prepare contact holes and remove the photoresist.

[0068] like Figure 8 As shown, photolithography is performed in the pixel area, and the photoresist 8 covers the chip surface. After development, the area where the contact electrode layer 6 needs to be grown is exposed, and the thickness of the photoresist is greater than 3 microns.

[0069] like Fig. 9 As shown, the metal of the contact electrode layer 6 is grown using a thermal evaporation process, for example Three layers of metal.

[0070] Finally, the detector is immersed in a stripping solution, and the photoresist and the metal layer on the surface of the photoresist are stripped off through a stripping process to obtain Figure 1 The detector structure is shown.

[0071] The detector is coupled to the silicon readout circuit through a mature flip-chip interconnection process and then packaged and tested. Fig.11 Detector response signal graph shown.

[0072] The technical route of the present invention effectively avoids the damage to the mercury cadmium telluride material caused by the mesa preparation process (dry etching or wet corrosion) in the traditional mesa p-on-n heterojunction technical route based on mercury cadmium telluride heterojunction materials, utilizes the n-type wide bandgap heterolayer growth process to achieve interface interdiffusion, and realizes the mercury cadmium telluride p-on-n planar heterojunction device through As ion implantation. Compared with ordinary mesa p-on-n heterojunction devices, it can effectively avoid the damage to the mercury cadmium telluride material caused by the mesa preparation process (dry etching or wet etching), and avoid leakage caused by the mesa passivation layer coverage effect and interface difference problems; compared with ordinary arsenic (As) implanted planar p-on-n homojunction devices, the heterojunction material structure formed by band modulation can effectively suppress tunneling current and surface leakage, which is beneficial to reduce dark current; compared with the planar heterojunction process route based on MBE technology, it has good impurity control ability (such as Fig.12 As shown), the material has a low dislocation density, which is beneficial to reducing dark current and improving device performance.

Claims

1. A mercury cadmium telluride double-layer component heterogeneous planar junction infrared detector, characterized in that: It includes a stacked substrate material layer, an n-type absorption layer, an n-type wide bandgap heterogeneous layer, a passivation layer and a contact electrode layer; The n-type wide bandgap heterogeneous layer is a residual impurity n-type material. The n-type wide bandgap heterogeneous layer is a wide bandgap heterogeneous layer prepared on the surface of the n-type absorption layer by a mercury-rich vertical liquid phase epitaxy process. The residual impurities are controlled at 8E13 / cm 3 The passivation layer covers at least part of the area of ​​the isolation region and the p-type injection region in the orthographic projection direction, and the part of the passivation layer not covering the p-type injection region is a contact hole; The contact electrode layer contacts the p-type injection region, and the contact electrode positive projection area is larger than and covers the contact hole; After the n-type wide bandgap heterogeneous layer is grown, an array p-type injection region is formed by photolithography, As impurities are selectively injected into the n-type wide bandgap heterogeneous layer, and after annealing and activation, independent pixels of a P-on-n structure are formed; The HgCdTe double-layer component heterojunction is used to suppress tunneling current and surface leakage and reduce dark current.

2. The HgCdTe double-layer component heterogeneous planar junction detector according to claim 1, characterized in that: The material of the substrate layer is selected from Cd 1-x Zn x One of Te and Si-based alternative substrates, wherein the x value is less than 0.

5.

3. The HgCdTe double-layer component heterogeneous planar junction detector according to claim 1, characterized in that: The materials of the n-type absorption layer and the n-type wide bandgap heterogeneous layer are both Hg 1-x Cd x Te, where x is less than or equal to 0.

6.

4. The HgCdTe double-layer component heterogeneous planar junction detector according to claim 3, characterized in that: The material of the n-type absorption layer is Hg 1-x Cd x The value of x in Te is 0.1 to 0.

4.

5. The HgCdTe double-layer component heterogeneous planar junction detector according to claim 3, characterized in that: The material of the n-type wide bandgap heterogeneous layer is Hg 1-x Cd x The value of x in Te is 0.23 to 0.

6.

6. The mercury cadmium telluride double-layer component heterogeneous planar junction detector according to any one of claims 1 to 5, characterized in that: The thickness of the passivation layer ranges from 500 angstroms to 20,000 angstroms.

7. The mercury cadmium telluride double-layer component heterogeneous planar junction detector according to any one of claims 1 to 5, characterized in that: The passivation layer material includes any one of CdTe, ZnS, SiN and BN or a combination of several materials.

8. A method for preparing a mercury cadmium telluride double-layer component heterogeneous planar junction detector as described in any one of claims 1 to 7, characterized in that: The method comprises: Growing an n-type absorption layer on the substrate material layer; Performing secondary growth on the n-type absorption layer, using mercury-rich vertical liquid phase epitaxy technology to prepare an n-type wide bandgap heterolayer; Photolithography is performed on the surface of the n-type wide bandgap heterogeneous layer, and after development, an injection region and an isolation region protected by photoresist are formed, and the injection region is leaked; After photolithography, As ions are used for ion implantation. After implantation, the photoresist is removed and activation annealing is performed to form a P region, which is separated by an n-type isolation region to form an independent pixel; Growing a passivation layer on the surface of the n-type wide bandgap heterogeneous layer by magnetron sputtering, thermal evaporation or MBE; Perform photolithography on the surface of the passivation layer, remove the passivation layer outside the photoresist protection area by etching or corrosion process, prepare contact holes, and strip the photoresist; Photolithography is performed in the pixel area, and after development, the area except the contact electrode is protected; Using a thermal evaporation process to prepare a metal layer for contact electrodes; The material is immersed in a stripping solution, and the photoresist and the surface metal layer of the protection zone material are removed through a stripping process to obtain a mercury cadmium telluride double-layer component heterogeneous planar junction detector.

9. The method for preparing a HgCdTe double-layer component heterogeneous planar junction detector according to claim 7, characterized in that: The dark current level of the HgCdTe double-layer component heterojunction detector at low temperature reaches the Rule 22 dark current empirical formula.

10. The method for preparing a HgCdTe double-layer component heterogeneous planar junction detector according to claim 9, characterized in that: When the temperature of the mercury cadmium telluride double-layer component heterogeneous planar junction detector is 77K, the longest response wavelength of the device reaches 13.3 microns.

Images