Perovskite photovoltaic module and preparation method thereof
By sequentially arranging a planarization layer and a TCO conductive film on the tempered glass as the substrate of the perovskite photovoltaic module, the problem of the large overall thickness and high preparation cost of the perovskite solar cell module in the existing technology is solved, and the module is realized Thickness reduction and cost savings, while improving photoelectric conversion efficiency and lifespan.
Patent Information
- Application Number
- CN202411494611.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-24
- Publication Date
- 2025-01-21
AI Technical Summary
The overall thickness of existing perovskite solar cell modules is relatively large and the production cost is high, which limits their use in some application scenarios and large-scale commercial applications.
The planarization layer and TCO conductive film are sequentially arranged on one side of the tempered glass as the substrate, which reduces the dependence on TCO glass and avoids the step of laminating the tempered glass cover on the back of the TCO glass, thereby reducing the overall thickness and Preparation costs.
It effectively reduces the overall thickness and preparation cost of perovskite photovoltaic components, while improving the photoelectric conversion efficiency and lifespan of the components.
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Figure CN119342975A_ABST
Abstract
Description
Technical Field
[0001] The present invention belongs to the technical field of perovskite solar cells, and in particular relates to a perovskite photovoltaic module and a preparation method thereof. Background Art
[0002] When discussing the effective utilization technology of solar energy, photovoltaic power generation is undoubtedly one of the most promising and promising fields. It directly converts solar energy into electrical energy, which is both environmentally friendly and efficient. Among many photovoltaic devices, perovskite solar cells, as an emerging and rapidly developing photovoltaic technology, are gradually showing their unique advantages and huge commercialization potential. The efficiency improvement rate of perovskite solar cells is the fastest among all types of solar cells. Its photoelectric conversion efficiency has approached or even exceeded that of traditional crystalline silicon cells, copper indium gallium selenide cells and cadmium telluride cells in some cases. In addition to high efficiency, perovskite solar cells have many other advantages. First, the cost of its raw materials is low, which greatly reduces the production cost and makes perovskite solar cells competitive in price. Secondly, the preparation process of perovskite solar cells is relatively simple, and does not require complex equipment and cumbersome steps, which helps to improve production efficiency and reduce costs. In addition, perovskite solar cells also have good compatibility and can be used for both rigid devices and flexible devices, providing more options for different application scenarios. More importantly, perovskite solar cells can also be stacked with other photovoltaic technologies to produce more efficient photovoltaic devices, which further enhances their application potential and value, shows great commercial potential, and attracts the attention of many scientific researchers.
[0003] However, there are still some challenges and problems in the preparation process of perovskite solar cells. Taking the structure of perovskite photovoltaic modules as an example, Figure 1 is a schematic diagram of the film structure of a perovskite solar cell in the prior art, such as Figure 1 As shown, existing perovskite solar cell modules may generally include TCO glass and a double-layer tempered glass cover plate connected to the TCO glass. Such a structure generally results in a larger overall thickness of the formed perovskite photovoltaic module, which not only increases the difficulty of transportation and installation, but also increases the preparation cost.
[0004] Taking the inversion device structure as an example, TCO glass is usually selected as the substrate. The hole transport layer, perovskite layer, electron transport layer, and electrode layer are deposited on the TCO glass in sequence, and then laminated with butyl rubber, POE film and cover glass for packaging. After that, a tempered glass cover is laminated on the back of the TCO glass to prevent hail or falling rocks from damaging the perovskite photovoltaic modules, thereby protecting the perovskite photovoltaic modules.
[0005] It should be noted that using TCO glass as the substrate and then laminating a tempered glass cover on its back will make the overall weight and volume of the perovskite solar cell larger, thus limiting its use in certain application scenarios; secondly, the manufacturing cost of TCO glass is relatively high, which limits the large-scale commercial application of perovskite solar cells. Summary of the invention
[0006] The purpose of the present invention is to provide a structure of a perovskite photovoltaic module and a preparation method thereof, so as to solve the problem that the overall thickness of the perovskite photovoltaic module is relatively thick and the preparation cost is relatively high in the prior art.
[0007] In order to achieve the above object, the present invention adopts the following technical solutions: In a first aspect, the present invention provides a perovskite photovoltaic module, which comprises, from bottom to top, tempered glass, a planarization layer, a TCO conductive film, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer; A thin film encapsulation layer is arranged above the electrode layer, and the thin film encapsulation layer covers the hole transport layer, the perovskite layer, the electron transport layer and the electrode layer, and the orthographic projection of the thin film encapsulation layer on the tempered glass overlaps with the orthographic projection of the planarization layer on the tempered glass; a protective film is arranged on the outer layer of the thin film encapsulation layer, and the protective film covers the thin film encapsulation layer.
[0008] Preferably, the material of the planarization layer is a layer of organic material or multiple layers of organic material.
[0009] Preferably, the thickness of the planarization layer ranges from 2 microns to 50 microns.
[0010] Preferably, the perovskite photovoltaic module further comprises a barrier layer, and the barrier layer is arranged between the planarization layer and the TCO conductive film; Wherein, the orthographic projection of the barrier layer on the tempered glass overlaps with the orthographic projection of the planarization layer on the tempered glass.
[0011] Preferably, the material of the barrier layer is one or more of Al2O3, TiO2, ZnO, ZrO2, MgO, HfO2, Ta2O5, AlN, SiNx, SiNxOy, SiOx, SiC and ITO.
[0012] Preferably, the thickness of the barrier layer ranges from 0.5 micrometers to 2 micrometers.
[0013] Preferably, the thin film encapsulation layer is a single-layer structure, or the thin film encapsulation layer is a multi-layer stacked structure.
[0014] Preferably, when the thin film encapsulation layer is a single-layer structure, the material of the thin film encapsulation layer is the same as the material of the barrier layer.
[0015] Preferably, when the thin film encapsulation layer is a multi-layer stacked structure, the thin film encapsulation layer includes, from bottom to top, a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer; The material of the first inorganic encapsulation layer is the same as that of the barrier layer, and the material of the second inorganic encapsulation layer is the same as that of the barrier layer; and the material of the first organic encapsulation layer is a high molecular polymer or a resin material.
[0016] In a second aspect, the present invention provides a method for preparing a perovskite photovoltaic module, which specifically comprises the following steps: A planarization layer, a TCO conductive film, a hole transport layer, a perovskite layer, an electron transport layer and an electrode layer are prepared in sequence on the tempered glass; a thin film encapsulation layer is prepared above the electrode layer to cover the hole transport layer, the perovskite layer, the electron transport layer and the electrode layer; a protective film is prepared on the outer layer of the thin film encapsulation layer to cover the thin film encapsulation layer.
[0017] Compared with the prior art, the present invention has the following beneficial effects: The present invention sequentially arranges a flattening layer and a TCO conductive film on one side of the tempered glass to use the tempered glass as the substrate of the perovskite photovoltaic module, so that there is no need to use the TCO glass as the substrate and then laminate a tempered glass cover on the back of the TCO glass. The present invention effectively reduces the thickness of the substrate of the perovskite photovoltaic module under the premise that the rigidity effect of the substrate of the perovskite photovoltaic module is good, so that the overall thickness of the perovskite photovoltaic module can be lowered, and the preparation cost of the perovskite photovoltaic module can be effectively reduced.
[0018] The hole transport layer in the present invention promotes the transmission of photogenerated holes from the perovskite layer to the bottom electrode, while blocking the reverse flow of electrons, thereby improving the photoelectric conversion efficiency of the perovskite photovoltaic module. The perovskite layer absorbs sunlight and converts it into electrical energy. The electron transport layer transmits photogenerated electrons from the perovskite layer to the external circuit; at the same time, the electron transport layer can also prevent the recombination of electrons and holes, thereby improving the photoelectric conversion efficiency of the battery. The electrode layer collects and conducts electrons or holes, thereby improving the current output capacity of the photovoltaic module. The thin film encapsulation layer can coat the hole transport layer, the perovskite layer, the electron transport layer and the electrode layer, thereby protecting these internal layer structures from damage by the external environment, thereby improving the life and stability of the photovoltaic module; the protective film covers the thin film encapsulation layer, further isolating the damage to the photovoltaic module by the external environment, and extending the service life of the module. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.
[0020] Figure 1 It is a schematic diagram of the film structure of a perovskite solar cell in the prior art; Figure 2 is a schematic structural diagram of a perovskite photovoltaic module according to embodiment 1 of the present invention; Figure 3 is a schematic structural diagram of a perovskite photovoltaic module according to embodiment 2 of the present invention; Figure 4 It is a schematic structural diagram of a perovskite photovoltaic module according to Example 3 of the present invention.
[0021] Among them: 101-tempered glass; 102-planarization layer; 103-barrier layer; 104-TCO conductive film; 105-hole transport layer; 106-perovskite layer; 107-electron transport layer; 108-electrode layer; 201-thin film encapsulation layer; 202-protective film; 301-POE film; 302-TCO glass; 303-cover glass; 304-butyl rubber; 305-tempered glass cover. DETAILED DESCRIPTION
[0022] In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used in the text are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definition in this specification shall prevail.
[0023] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.
[0024] In this article, all features such as values, quantities, contents and concentrations defined in the form of numerical ranges or percentage ranges are for simplicity and convenience only. Accordingly, the description of numerical ranges or percentage ranges should be considered to have included and specifically disclosed all possible secondary ranges and individual values within the range (including integers and fractions).
[0025] In this document, unless otherwise specified, “includes,” “including,” “contains,” “has,” or similar terms cover the meanings of “consisting of” and “mainly consisting of,” for example, “A includes a” covers the meanings of “A includes a and other” and “A only includes a.”
[0026] In this document, in order to make the description concise, not all possible combinations of various technical features in various embodiments or examples are described. Therefore, as long as there is no contradiction in the combination of these technical features, the various technical features in various embodiments or examples can be combined arbitrarily, and all possible combinations should be considered to be within the scope of this specification.
[0027] The present invention is further described in detail below in conjunction with the accompanying drawings: The first object of the present invention is to provide a perovskite photovoltaic module, which includes, from bottom to top, a tempered glass 101, a planarization layer 102, a TCO conductive film 104, a hole transport layer 105, a perovskite layer 106, an electron transport layer 107 and an electrode layer 108. The present invention sequentially arranges a planarization layer 102 and a TCO conductive film 104 on one side of the tempered glass 101. In this case, there is no need to use a TCO glass 302 as a substrate, and then a layer of tempered glass cover plate 305 is laminated on the back of the TCO glass 302. The present invention can ensure that the thickness of the substrate of the perovskite photovoltaic module is effectively reduced under the premise that the rigidity effect of the substrate of the perovskite photovoltaic module is good, so that the overall thickness of the perovskite photovoltaic module can be lowered, and the preparation cost of the perovskite photovoltaic module can be effectively reduced.
[0028] The planarization layer 102 may include one or more layers of organic materials. By providing the planarization layer 102, the surface flatness of one side of the tempered glass 101 can be ensured to be good, thereby meeting the preparation requirements of the perovskite photovoltaic module.
[0029] A thin film encapsulation layer 201 is disposed above the electrode layer 108, and the orthographic projection of the thin film encapsulation layer 201 on the tempered glass 101 overlaps with the orthographic projection of the planarization layer 102 on the tempered glass 101. In this way, the life and stability of the perovskite photovoltaic module can be improved.
[0030] In another possible implementation, Figure 2 As shown, the perovskite photovoltaic module of the present invention further includes a barrier layer 103, and the barrier layer 103 is disposed between the planarization layer 102 and the TCO conductive film 104. The orthographic projection of the barrier layer 103 on the tempered glass 101 may overlap with the orthographic projection of the planarization layer 102 on the tempered glass 101. That is, the boundary of the planarization layer 102 is flush with the boundary of the barrier layer 103, or the barrier layer 103 may cover the upper surface and the side surface of the planarization layer 102.
[0031] It should be noted that by providing the barrier layer 103 , water and oxygen in the environment can be better isolated, thereby improving the life and stability of the perovskite photovoltaic module.
[0032] The TCO conductive film 104 is an important component of the perovskite photovoltaic module, which can allow most of the sunlight to enter the absorption layer to achieve photoelectric conversion, thereby improving the photoelectric conversion efficiency of the photovoltaic module.
[0033] The hole transport layer 105 promotes the transport of photogenerated holes from the perovskite layer 106 to the bottom electrode, while blocking the reverse flow of electrons, thereby improving the photoelectric conversion efficiency of the perovskite photovoltaic module.
[0034] The perovskite layer 106 is the core part of the perovskite photovoltaic module, which is responsible for absorbing sunlight and converting the absorbed sunlight into electrical energy.
[0035] The electron transport layer 107 transports the photogenerated electrons from the perovskite layer 106 to the external circuit; at the same time, the electron transport layer 107 can also prevent the recombination of electrons and holes, thereby improving the photoelectric conversion efficiency of the battery.
[0036] The electrode layer 108 is responsible for collecting and conducting electrons or holes, thereby improving the current output capacity of the photovoltaic module because the electrode layer can collect and conduct electrons or holes more efficiently.
[0037] A thin film encapsulation layer 201 is disposed above the electrode layer 108 , and the thin film encapsulation layer 201 covers the hole transport layer 105 , the perovskite layer 106 , the electron transport layer 107 and the electrode layer 108 ; a protective film 202 is disposed on the outer layer of the thin film encapsulation layer 201 , wherein the protective film 202 covers the thin film encapsulation layer 201 .
[0038] The thin film encapsulation layer 201 can encapsulate the hole transport layer 105, the perovskite layer 106, the electron transport layer 107 and the electrode layer 108, thereby protecting these internal layer structures from damage by the external environment. The thin film encapsulation layer 201 can isolate moisture, oxygen and other substances that may corrode or damage the internal layer structure, thereby improving the life and stability of the photovoltaic module; by reducing the interference of the external environment on the internal layer structure, the thin film encapsulation layer 201 helps to maintain the stability of the photovoltaic module's photoelectric conversion efficiency.
[0039] The protective film 202 covers the thin film encapsulation layer 201, further isolating the photovoltaic module from damage by the external environment. The protective film 202 can prevent dust, dirt, moisture and other impurities from entering the interior of the photovoltaic module, thereby extending the service life of the module.
[0040] Compared with the existing perovskite photovoltaic modules, the components of the present invention can save materials and reduce costs. The existing technology uses TCO glass 302 as a substrate, deposits a hole transport layer 105, a perovskite layer 106, an electron transport layer 107, and an electrode layer 108 on the TCO glass 302 in sequence, and then laminates butyl rubber 304, POE film 301 and cover glass 303 for packaging, and then laminates a tempered glass cover 305 on the back of the TCO glass 302. Among them, the tempered glass cover 305 of the existing perovskite photovoltaic module can usually be a double-layer tempered glass, and its thickness is usually in the range of (3.2 mm~6 mm)*2; the thickness of the TCO glass 302 is usually: 3.2 mm; the thickness of the POE film 301 is usually in the range of: 0.1 mm~0.3 mm.
[0041] The thickness of the planarization layer 102 in the present invention is generally in the range of 2 microns to 50 microns, and the thickness of the barrier layer is generally in the range of 0.5 microns to 2 microns. Compared with the prior art, the overall thickness of the structure can be reduced by more than 6 mm. Although the present invention adds the planarization layer 102, the thin film encapsulation layer 201 and the protective layer, the cost of these materials is less than that of a piece of glass, which can greatly reduce the preparation cost.
[0042] The second object of the present invention is to provide a method for preparing a perovskite photovoltaic module, which specifically comprises the following steps: A planarization layer 102, a TCO conductive film 104, a hole transport layer 105, a perovskite layer 106, an electron transport layer 107 and an electrode layer 108 are sequentially prepared on the tempered glass 101; a thin film encapsulation layer 201 is prepared above the electrode layer 108 to cover the hole transport layer 105, the perovskite layer 106, the electron transport layer 107 and the electrode layer 108; a protective film 202 is prepared on the outer layer of the thin film encapsulation layer 201 to cover the thin film encapsulation layer 201.
[0043] Specifically, the process of preparing TCO conductive film 104, laser scribing of TCO conductive film 104, coating of hole transport layer 105, coating of perovskite layer 106, coating of electron transport layer 107, coating of electrode layer 108 and laser scribing and edge cleaning functional layer is carried out in sequence on the side of planarization layer 102 in perovskite photovoltaic module away from tempered glass 101. After that, thin film encapsulation is carried out on the surface of the formed functional layer to form thin film encapsulation layer 201, and after encapsulation, surface protection film 202 is attached and electrodes are led out, and finally the preparation of perovskite photovoltaic module is completed.
[0044] In another possible implementation, the present invention can prepare a planarization layer 102, a barrier layer 103, a TCO conductive film 104, a hole transport layer 105, a perovskite layer 106, an electron transport layer 107 and an electrode layer 108 in sequence on a tempered glass 101; prepare a thin film encapsulation layer 201 above the electrode layer 108 to cover the hole transport layer 105, the perovskite layer 106, the electron transport layer 107 and the electrode layer 108; and prepare a protective film 202 on the outer layer of the thin film encapsulation layer 201 to cover the thin film encapsulation layer 201.
[0045] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.
[0046] The following examples use conventional instruments and equipment in the art. The experimental methods in the following examples where specific conditions are not specified are usually carried out under conventional conditions or under conditions recommended by the manufacturer. The various raw materials used in the following examples are conventional commercial products unless otherwise specified, and their specifications are conventional specifications in the art. In the specification of the present invention and the following examples, unless otherwise specified, "%" means weight percentage, "part" means weight part, and ratio means weight ratio.
[0047] Example 1 The planarization layer 102 in the perovskite photovoltaic module can be located on one side of the tempered glass 101. The material of the planarization layer 102 can be a layer of organic material or multiple layers of organic material. For example, a photoresist or PI glue can be deposited on one side of the tempered glass 101 by spraying, printing or coating to form the planarization layer 102. For another example, POE+PEN or PET can be laminated together on one side of the tempered glass 101 to form the planarization layer 102.
[0048] The barrier layer 103 in the perovskite photovoltaic module can be located on the side of the planarization layer 102 away from the tempered glass 101. Figure 2 As shown, the boundary of the planarization layer 102 is flush with the boundary of the barrier layer 103 .
[0049] The material of the barrier layer 103 may be one or more of Al2O3, TiO2, ZnO, ZrO2, MgO, HfO2, Ta2O5, AlN, SiNx, SiNxOy, SiOx, SiC and ITO. For example, the barrier layer 103 may be formed on the side of the planarization layer 102 away from the tempered glass 101 by depositing SiNx / SiOx / SiOxNy by chemical vapor deposition PECVD. For another example, the barrier layer 103 may be formed on the side of the planarization layer 102 away from the tempered glass 101 by depositing Al2O3 by atomic layer deposition (ALD).
[0050] The TCO conductive film 104 may be located on the side of the barrier layer 103 away from the tempered glass 101 . For example, a transparent conductive film such as ITO, FTO or AZO may be deposited on the side of the barrier layer 103 away from the tempered glass 101 by PVD magnetron sputtering to form the TCO conductive film 104 .
[0051] The hole transport layer 105 may be located on the side of the TCO conductive film 104 away from the tempered glass 101 . For example, the hole transport layer 105 may be prepared by PVD deposition of nickel oxide on the side of the TCO conductive film 104 away from the tempered glass 101 .
[0052] The perovskite layer 106 may be located on the side of the hole transport layer 105 away from the tempered glass 101. For example, the perovskite layer 106 is prepared by coating or evaporation on the side of the hole transport layer 105 away from the tempered glass 101. Here, the material of the perovskite layer 106 may include one or more of FAPbI, MAPbI, and CsFAPbI.
[0053] The electron transport layer 107 may be located on the side of the perovskite layer 106 away from the tempered glass 101. For example, the electron transport layer 107 may be prepared by vacuum evaporation on the side of the perovskite layer 106 away from the tempered glass 101. For example, the material of the electron transport layer 107 includes one or both of C60 and BCP.
[0054] In the present application, a thin film encapsulation layer 201 may be prepared on the side of the electron transport layer 107 away from the tempered glass 101 , and the thin film encapsulation layer 201 may be a single-layer structure or a multi-layer stacked structure.
[0055] In the case that the thin film encapsulation layer 201 is a single-layer structure, the preparation method and materials of the thin film encapsulation layer 201 are the same as those of the barrier layer 103 .
[0056] In the case where the thin film encapsulation layer 201 is a multi-layer stacked structure, the thin film encapsulation layer 201 includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer from bottom to top. The preparation method and materials of the first inorganic encapsulation layer and the second inorganic encapsulation layer are also the same as those of the above-mentioned barrier layer 103. The first organic encapsulation layer is formed by a jet dispensing method, a spin coating method, a screen printing method, or an inkjet printing method to form an organic encapsulation adhesive layer, and the organic material used is a high molecular polymer or a resin material, such as a colorless and transparent epoxy encapsulation adhesive, a silicone encapsulation adhesive, a polyurethane encapsulation adhesive, an epoxy resin, or an acrylic resin.
[0057] The protective film 202 is prepared to cover the thin film encapsulation layer 201, and the thin film encapsulation layer 201 is covered by adhesion or lamination. For example, the material of the protective film 202 includes PET, POE, TPT and the like.
[0058] Example 2 like Figure 3 As shown, the difference from Embodiment 1 is that the barrier layer 103 can cover the planarization layer 102 .
[0059] Example 3 In one possible implementation, Figure 4 As shown, the difference from Example 1 is that in this embodiment, the rough surface of one side of the tempered glass 101 can be ground to make the surface of one side of the tempered glass 101 smoother and with better flatness, so as to ensure that the tempered glass 101 can meet the preparation requirements of the perovskite photovoltaic module, and then the TCO conductive film 104 can be directly deposited on one side of the polished tempered glass 101, so as to further reduce the overall thickness of the perovskite photovoltaic module and effectively reduce the preparation cost of the perovskite photovoltaic module.
[0060] Example 4 The difference from Example 1 is that the TCO conductive film 104 can be directly prepared on the side of the planarization layer 102 away from the tempered glass 101 , and there is no need to prepare the barrier layer 103 .
[0061] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A perovskite photovoltaic module, characterized in that: The invention comprises, from bottom to top, tempered glass (101), a planarization layer (102), a TCO conductive film (104), a hole transport layer (105), a perovskite layer (106), an electron transport layer (107) and an electrode layer (108); A thin film encapsulation layer (201) is arranged above the electrode layer (108), the thin film encapsulation layer (201) covers the hole transport layer (105), the perovskite layer (106), the electron transport layer (107) and the electrode layer (108), and the orthographic projection of the thin film encapsulation layer (201) on the tempered glass (101) overlaps with the orthographic projection of the flattening layer (102) on the tempered glass (101); a protective film (202) is arranged on the outer layer of the thin film encapsulation layer (201), and the protective film (202) covers the thin film encapsulation layer (201).
2. A perovskite photovoltaic module according to claim 1, characterized in that: The material of the planarization layer (102) is a layer of organic material or multiple layers of organic material.
3. A perovskite photovoltaic module according to claim 1, characterized in that: The thickness of the planarization layer (102) ranges from 2 micrometers to 50 micrometers.
4. A perovskite photovoltaic module according to claim 1, characterized in that: The perovskite photovoltaic module further comprises a barrier layer (103), wherein the barrier layer (103) is arranged between the planarization layer (102) and the TCO conductive film (104); The orthographic projection of the barrier layer (103) on the tempered glass (101) overlaps with the orthographic projection of the planarization layer (102) on the tempered glass (101).
5. A perovskite photovoltaic module according to claim 4, characterized in that: The material of the barrier layer (103) is one or more of Al2O3, TiO2, ZnO, ZrO2, MgO, HfO2, Ta2O5, AlN, SiNx, SiNxOy, SiOx, SiC and ITO.
6. A perovskite photovoltaic module according to claim 5, characterized in that: The thickness of the barrier layer (103) ranges from 0.5 micrometers to 2 micrometers.
7. A perovskite photovoltaic module according to claim 4, characterized in that: The thin film encapsulation layer (201) is a single-layer structure, or the thin film encapsulation layer (201) is a multi-layer stacked structure.
8. A perovskite photovoltaic module according to claim 7, characterized in that: In the case where the thin film encapsulation layer (201) is a single-layer structure, the material of the thin film encapsulation layer (201) is the same as the material of the barrier layer (103).
9. A perovskite photovoltaic module according to claim 7, characterized in that: In the case where the thin film encapsulation layer (201) is a multi-layer stacked structure, the thin film encapsulation layer (201) comprises, from bottom to top, a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer; The material of the first inorganic encapsulation layer is the same as the material of the barrier layer (103), and the material of the second inorganic encapsulation layer is the same as the material of the barrier layer (103); and the material of the first organic encapsulation layer is a high molecular polymer or a resin material.
10. A method for preparing a perovskite photovoltaic module according to any one of claims 1 to 9, characterized in that: The specific steps include: A planarization layer (102), a TCO conductive film (104), a hole transport layer (105), a perovskite layer (106), an electron transport layer (107) and an electrode layer (108) are sequentially prepared on a tempered glass (101); a thin film encapsulation layer (201) is prepared above the electrode layer (108) to cover the hole transport layer (105), the perovskite layer (106), the electron transport layer (107) and the electrode layer (108); and a protective film (202) is prepared on the outer layer of the thin film encapsulation layer (201) to cover the thin film encapsulation layer (201).
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