A method and device for high-precision laser selective etching of curved surface multilayer film system

Abstract

The present invention claims a method and device for high-precision laser selective etching of a curved multilayer film system, a method for high-precision laser selective etching of a curved multilayer film system, which includes the following processes: obtaining a battery image of the surface of a curved perovskite battery through a visual imaging system, and transmitting the battery image to a main control unit; the main control unit locates the position of the P1 line; the distance measuring unit identifies the height between the laser scribing head and the surface of the curved perovskite battery; the laser scribing head is driven by a mobile module to etch the P1 line on the surface of the curved perovskite battery to obtain the P1 scribed line; the main control unit obtains the reference positioning line of the P1 scribed line; an offset value is added to the battery image according to the reference positioning line of the P1 scribed line, thereby locating the P2 line and the P3 line; the laser scribing head is driven by a mobile module to etch the P3 line on the surface of the curved perovskite battery to obtain the P3 scribed line. The distance measuring unit can dynamically adapt to the real-time motion state of the workpiece to avoid problems caused by focus deviation.

Description

Technical Field

[0001] The present invention relates to the field of laser etching technology, and more specifically, to a method and device for selectively etching a curved surface multilayer film system with high precision laser. Background Art

[0002] The typical structure of a perovskite solar cell includes a top electrode layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and a bottom electrode layer. Ultrafast lasers have high peak power, nonlinear absorption characteristics, excellent thermal diffusion control, and high-precision processing capabilities, so they are widely used in semiconductors, brittle materials, and soft biomaterials. Laser etching, as a non-contact processing method, etches patterns on the surface of the material by focusing the light beam along a predetermined path. It has strong material adaptability, high-precision control, and fine etching effects. In the manufacture of perovskite solar cells, ultrafast lasers are usually used to scribe the P1, P2, and P3 lines to achieve series battery modules. However, since the "dead zone" between the P1, P2, and P3 lines cannot participate in power generation, it is necessary to improve the accuracy of the lines as much as possible during the laser etching process and reduce the distance between the lines to improve the battery efficiency.

[0003] Traditional perovskite solar cells are mostly used in planar structures. Perovskite solar cell laser etching devices are mainly suitable for etching processing of planar cells, which is difficult to meet the laser etching requirements of curved cells. The design of curved perovskite solar cells is of great significance, especially in the application of flexible perovskite solar cells, which show unique advantages. The bendability, light weight and convenient processing of curved perovskite solar cells make them an ideal choice for special occasions. Curved perovskite solar cells can be better integrated into car roofs, building exterior walls and various irregularly shaped lighting equipment, thus achieving flexible applications. Curved perovskite solar cells are similar to traditional planar perovskite cells. The series structure is carved out by laser etching process to manufacture high-efficiency solar cell modules. In complex curved surface processing, five-axis CNC machine tools are currently the commonly used processing method. However, due to its large size, large inertia and slow jump speed, the processing accuracy and efficiency are limited, and it is difficult to meet the requirements of high-precision laser etching on the surface of curved perovskite solar cells. In order to improve the application effect of laser in complex curved surface processing, galvanometer scanning laser technology is introduced. Galvanometer scanning etching uses the motor in the two-dimensional scanning head to drive the two plane mirrors to deflect to achieve laser scanning, and focuses the laser through focusing to achieve high-precision processing. The galvanometer has the characteristics of light weight, small moment of inertia, high processing speed and fast jump, which effectively solves the impact of machine tool inertia and insufficient jump speed on accuracy and efficiency. At present, most three-dimensional curved surface laser etching is completed using scanning galvanometer laser technology.

[0004] For example, the Xi'an Institute of Optics and Precision Mechanics of the Chinese Academy of Sciences has disclosed a three-dimensional curved surface laser etching method with announcement number CN108838551B. This method maps a two-dimensional graphic to the corresponding position of a three-dimensional curved surface model, segments the graphic according to the processing range of the scanning galvanometer and the focal depth of the laser, and calculates the normal vector coordinates of the center point of each segmented area. These coordinates determine the processing path of the scanning galvanometer in each segmented area, and scan and process the graphic of each segmented area one by one, thereby completing the laser etching of the curved surface parts.

[0005] In addition to the laser galvanometer scanning technology, there is also a laser etching device based on a ranging system. The announcement number CN207629409U published by the Xi'an Institute of Optics and Precision Mechanics of the Chinese Academy of Sciences is a laser etching device for curved surface structure forming, including a motion system, a laser scanning system, a ranging system and a data processing and control system. The motion system includes a three-dimensional mobile platform for fixing the workpiece to be processed; the laser scanning system consists of a laser, a three-dimensional scanning module and a telecentric field mirror arranged in sequence along the laser optical path. The laser is responsible for emitting pulsed lasers, and the three-dimensional scanning module and the telecentric field mirror focus the laser on the surface of the workpiece to be processed according to the three-dimensional structural characteristics of the workpiece processing surface. The ranging system includes a laser rangefinder for measuring the coordinates of selected feature points and feeding the data back to the data processing and control system. The data processing and control system is used to store the three-dimensional structure of the surface of the workpiece to be processed, and is connected to the laser, the three-dimensional scanning module and the laser rangefinder. The patent provides a laser etching method and device that combines gradient stratification with fine scanning to improve the efficiency and accuracy of curved surface structure processing.

[0006] The disadvantages of the prior art include: 1. Using a five-axis CNC machine tool, it is difficult to perform high-speed and high-precision processing due to its large size, large inertia, and slow jump speed.

[0007] 2. When using a galvanometer for processing, the adaptability of the focal length of the galvanometer optical path is limited. When processing large and complex curved surfaces, the position needs to be adjusted multiple times, and it is more complicated to achieve stable laser path control on the curved surface, especially under high precision requirements, and path deviation is prone to occur.

[0008] 3. Use the distance measuring system for processing. Each process of P1, P2, and P3 engraving requires distance measurement and movement, and the engraving process is relatively complicated.

[0009] Therefore, how to overcome the problems of poor focal length adaptability and high difficulty in path control of the galvanometer optical path on large-area curved surfaces, and how to achieve simpler, more efficient and stable curved surface etching processing are the technical problems to be solved by this application. Summary of the invention

[0010] In view of the shortcomings of the prior art, on the one hand, the present invention proposes a method for high-precision laser selective etching of a curved surface multilayer film system. The galvanometer is replaced by a ranging unit to solve the problems of poor focal length adaptability and high difficulty in path control of the galvanometer optical path on a large-area curved surface, and simplifies the complex ranging and movement requirements for the P1, P2, and P3 lines during the engraving process, thereby achieving a simpler, more efficient, and stable curved surface etching process.

[0011] A method for high-precision laser selective etching of a curved surface multilayer film system, comprising the following steps:

[0012] St10, obtain the battery image of the surface of the curved perovskite battery through the visual imaging system, and transmit the battery image to the main control unit.

[0013] St11, the main control unit establishes a coordinate system based on the battery image, and analyzes the grayscale and edge features of the battery image to obtain the P1 position information of the P1 line.

[0014] St12, obtain the height information between the laser scribing head and the surface of the curved perovskite battery through the distance measuring unit, and transmit the height information to the main control unit for storage.

[0015] St13, the main control unit controls the movement of the mobile module based on the height information and the depth of the P1 line, thereby driving the laser scribing head to etch the P1 line on the surface of the curved perovskite battery through the mobile module to obtain the P1 line.

[0016] St20, the main control unit obtains the reference positioning line of the P1 marking line through the visual imaging system.

[0017] St30, the main control unit adds an offset value to the battery image according to the position of the P2 line relative to the reference positioning line, thereby obtaining the P2 position information of the P2 line.

[0018] St31. Based on the height information, the main control unit controls the movement of the mobile module according to the depth of the P2 line, thereby driving the laser scribing head through the mobile module to etch the P2 line on the surface of the curved perovskite battery to obtain the P2 line.

[0019] St40, the main control unit adds an offset value to the battery image according to the position of the P3 line relative to the reference positioning line, thereby obtaining the P3 position information of the P3 line.

[0020] St41, the main control unit controls the movement of the mobile module based on the height information and the depth of the P3 line, thereby driving the laser scribing head through the mobile module to etch the P3 line on the surface of the curved perovskite battery to obtain the P3 line.

[0021] On the other hand, the present invention proposes a device for high-precision laser selective etching of a curved multilayer film system, including a main control unit, the main control unit is connected to a visual imaging system, a ranging unit and a mobile module, the mobile module is connected to a laser scribing head, the visual imaging system is used to obtain a battery image of the surface of a curved perovskite battery, the ranging unit is used to monitor the distance between the laser scribing head and the surface of the curved perovskite battery, the mobile module is used to control the movement of the laser scribing head, the laser scribing head is used to etch the surface of the curved perovskite battery, and the main control unit is used to execute a method for high-precision laser selective etching of a curved multilayer film system.

[0022] In summary, the above technical solution has the following beneficial effects: the present application replaces the galvanometer with a ranging unit to solve the problems of poor focal length adaptability and high difficulty in path control of the galvanometer optical path on large-area curved surfaces, and simplifies the complex ranging and movement requirements for the P1, P2, and P3 lines during the engraving process, thereby achieving a simpler, more efficient, and stable curved surface etching process.

[0023] The beneficial effects of the present application are as follows: 1. The present application adopts a distance measuring unit, which enables the laser scribing head to sense the height change of the workpiece surface in real time and automatically adjust the laser focus position, so as to always keep the laser focus precisely positioned on the workpiece surface. This real-time adjustment mechanism is more flexible than simply relying on the distance measuring system to collect preset height data, and can quickly respond to slight changes in the shape of the curved surface.

[0024] 2. The distance measuring unit of the present application can dynamically adapt to the real-time motion state of the workpiece during operation, that is, update the position and height data in real time during the movement of the workpiece. This follow-up control mechanism is particularly suitable for dynamic processing requirements and avoids the problem of focus deviation caused by the movement of the workpiece.

[0025] 3. The present application is used for etching of curved perovskite solar cells. The P1 line is captured by a visual imaging system as a positioning reference, and the positions of the P2 and P3 lines are determined by a fixed offset distance relative to the P1 line. The stored height information is used to achieve fast and precise processing of different engraving line positions without the need for multiple sampling of height position information.

[0026] 4. This application does not require the use of a distance measuring unit for distance measurement during P2 and P3 etching, thereby reducing equipment costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of the connection of device modules for high-precision laser selective etching of curved surface multilayer film systems;

[0028] Figure 2 This is a schematic diagram of the working principle of the ranging unit;

[0029] Figure 3 This is a schematic diagram of the connection between the distance measuring unit and the laser scribing head;

[0030] Figure 4 is a schematic diagram of a laser scribing head;

[0031] Figure 5 A schematic diagram of a method for high-precision laser selective etching of a curved surface multilayer film system;

[0032] Figure 6 It is a schematic diagram of the P1, P2, and P3 engraving lines;

[0033] Figure 7 This is a schematic diagram of the top view of the P1 scribe line positioning;

[0034] Figure 8 This is a schematic diagram of the top view of the P2 scribe line positioning;

[0035] Fig. 9 Schematic diagram of the top view of P3 line positioning.

[0036] Figure numerals: 10, visual imaging system; 11, lighting unit; 12, CCD imaging unit; 20, main control unit; 30, ranging unit; 31, capacitive sensing module; 32, oscillation circuit; 40, moving module; 50, laser scribing head. DETAILED DESCRIPTION

[0037] The following is a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] like Figure 1-Figure 6 As shown, a method for high-precision laser selective etching of a curved surface multilayer film system includes the following processes:

[0039] St10, obtaining a battery image of the surface of the curved perovskite battery through the visual imaging system 10, and transmitting the battery image to the main control unit 20.

[0040] St11, the main control unit 20 establishes a coordinate system based on the battery image, and analyzes the grayscale and edge features of the battery image to obtain the P1 position information of the P1 line.

[0041] St12, obtain the height information between the laser scribing head 50 and the surface of the curved perovskite battery through the distance measuring unit 30, and transmit the height information to the main control unit 20 for storage.

[0042] St13, the main control unit 20 controls the movement of the mobile module 40 according to the depth of the P1 scribe line based on the height information, so that the laser scribing head 50 is driven by the mobile module 40 to etch the P1 line on the surface of the curved perovskite battery to obtain the P1 scribe line.

[0043] St20, the main control unit 20 obtains the reference positioning line of the P1 scribed line through the visual imaging system 10.

[0044] St30, the main control unit 20 adds an offset value to the battery image according to the position of the P2 line relative to the reference positioning line, thereby obtaining the P2 position information of the P2 line.

[0045] St31, the main control unit 20 controls the movement of the mobile module 40 according to the P2 line depth based on the height information, so that the laser scribing head 50 is driven by the mobile module 40 to etch the P2 line on the surface of the curved perovskite battery to obtain the P2 line.

[0046] St40, the main control unit 20 adds an offset value to the battery image according to the position of the P3 line relative to the reference positioning line, thereby obtaining the P3 position information of the P3 line.

[0047] St41, the main control unit 20 controls the movement of the mobile module 40 according to the depth of the P3 scribe line based on the height information, so that the laser scribing head 50 is driven by the mobile module 40 to etch the P3 line on the surface of the curved perovskite battery to obtain the P3 scribe line.

[0048] The present application replaces the galvanometer with a distance measuring unit 30 to solve the problems of poor focal length adaptability and high path control difficulty of the galvanometer optical path on a large-area curved surface, and simplifies the complex distance measurement and movement requirements for the P1, P2, and P3 lines during the engraving process, thereby achieving a simpler, more efficient, and stable curved surface etching process.

[0049] The beneficial effects of the present application are as follows: 1. The present application adopts the distance measuring unit 30, so that the laser scribing head 50 can sense the height change of the workpiece surface in real time and automatically adjust the laser focus position, so as to always keep the laser focus accurately positioned on the workpiece surface. This real-time adjustment mechanism is more flexible than simply relying on the distance measuring system to collect preset height data, and can quickly respond to slight changes in the shape of the curved surface.

[0050] 2. The distance measuring unit 30 of the present application can dynamically adapt to the real-time motion state of the workpiece during operation, that is, update the position and height data in real time during the motion of the workpiece. This follow-up control mechanism is particularly suitable for dynamic processing requirements and avoids the problem of focus deviation caused by the movement of the workpiece.

[0051] 3. The present application is used for etching of curved perovskite solar cells. The visual imaging system 10 captures the P1 line as a positioning reference, and determines the positions of the P2 and P3 lines at a fixed offset distance relative to the P1 line. The stored height information is used to achieve fast and precise processing of different engraving line positions without the need for multiple sampling of the height position information.

[0052] 4. The present application does not need to use the distance measuring unit 30 for distance measurement during P2 and P3 etching, thereby reducing equipment costs.

[0053] Specifically, when the curved perovskite cell is fixed on the laser cutting table, the curved surface bulges upward, and the two sides of the curved surface bend downward. The Z-axis direction of the coordinate system is the height direction, the height of the curved surface in the Y-axis direction is different, and the height of the curved surface in the X-axis direction is the same. The P1, P2, and P3 lines extend in the Y-axis direction, that is, the P1, P2, and P3 lines are arranged in the X-axis direction. The thickness of the P2 layer and the P3 layer is fixed in the perovskite cell, which is artificially designed and controlled and is known, so by locating the P1 line and superimposing the offset value, the P2 line and the P3 line can be located.

[0054] The battery image is acquired through the following process:

[0055] St101, the visual imaging system 10 includes an illumination unit 11 and a CCD imaging unit 12. The light emitted by the illumination unit 11 is reflected by a beam splitter, passes through a dichroic mirror and a focusing objective lens, and is irradiated onto the surface of the curved perovskite cell. The reflected light passes through the focusing objective lens, the dichroic mirror, the beam splitter and the focusing lens in sequence, and finally reaches the CCD imaging unit 12.

[0056] The CCD imaging unit 12 is an option for the visual imaging system 10. The CCD imaging unit 12 is the CCD visual imaging system 10, and its full name is Charge-Coupled Device Visual Imaging System. The CCD visual imaging system 10 uses an industrial camera (CCD) to replace human eyes to complete functions such as identification, measurement, positioning, and judgment. Visual inspection refers to converting the captured target into an image signal through a machine vision product, transmitting it to a dedicated image processing system, and converting it into a digital signal based on pixel distribution, brightness, color and other information. The image system performs various operations on these signals to extract the characteristics of the target, and then controls the equipment action on site based on the results of the judgment. Specifically, the imaging field of view must be precisely matched with the laser focusing distance to ensure that the laser spot focus point, P1 line, P2 line and P3 line are presented as the clearest image in the CCD imaging unit 12.

[0057] Furthermore, in addition to the CCD imaging unit 12, the visual imaging system 10 can also use a CMOS imaging system, an infrared camera or a line scan camera as an imaging device to meet the image requirements of different wavelengths or higher resolutions. These alternative devices can achieve real-time monitoring of laser scribing in different spectral ranges, thereby improving the adaptability of the system.

[0058] Furthermore, the reference positioning method is replaced: During the laser etching process, high-precision positioning technologies such as laser interferometers or optical rulers can be used instead of the CCD method of capturing the P1 line positioning reference to achieve accurate determination of the P2 and P3 line positions.

[0059] The distance measuring unit 30 includes a capacitive sensing module 31 and an oscillating circuit 32, the capacitive sensing module 31 and the oscillating circuit 32 are connected, and the recognition of the height information includes the following process:

[0060] St121, the capacitive sensing module 31 is used to monitor the plate capacitance value between the laser scribing head 50 and the surface of the curved perovskite battery in real time.

[0061] St122, when the capacitance value changes, the output capacitance frequency value of the oscillation circuit 32 changes according to the following relationship:

[0062]

[0063] Wherein, f is the capacitance frequency value, L is the inductance of the oscillation circuit 32 , and C is the capacitance value of the capacitance sensor module 31 .

[0064] St123, the main control unit 20 calculates the capacitance value of the capacitance sensor module 31 through the capacitance frequency value, and then converts the capacitance value into height information, and sends the height information to the mobile module 40. The relationship between the height information and the capacitance value is as follows:

[0065] Where C is the capacitance value of the capacitive sensing module, is the dielectric constant of vacuum, is the relative dielectric constant, s is the plate area of ​​the capacitive sensing module 31, d is the distance between the two plates of the capacitive sensing module 31, and the distance between the two plates of the capacitive sensing module 31 is the height between the laser scribing head 50 and the surface of the perovskite solar cell.

[0066] The main control unit 20 includes an FPGA and an MCU, the oscillation circuit 32 is connected to the FPGA, the FPGA is connected to the MCU, the capacitance frequency value is processed by the FPGA signal and the MCU motion control process to obtain the position information, and then the motion control instruction is sent to the mobile module 40. FPGA is a field programmable gate array, and MCU is a microcontroller. Specifically, the oscillation circuit 32 is a capacitor three-point LC oscillation circuit 32.

[0067] Furthermore, the distance measuring unit 30 can be replaced by other sensors with high accuracy and fast response speed, such as laser displacement sensor, ultrasonic sensor or laser triangulation sensor, in addition to the capacitive sensing module 31. These alternative sensors can also detect the distance between the laser scribing head 50 and the surface of the perovskite solar cell and provide height information after signal conversion.

[0068] Furthermore, the ranging unit 30 can adopt multi-sensor fusion control: by fusing the data of multiple sensors, such as capacitive sensors and laser displacement sensors, higher precision control of the position of the laser scribing head 50 can be achieved to meet the needs of laser etching of complex surface shapes or multi-layer materials.

[0069] Furthermore, replacement of signal processing circuits: the processing of height detection signals can be replaced by implementation based on digital signal processors or application-specific integrated circuit chips to increase signal processing speed and reduce power consumption, thereby meeting the needs of different scenarios.

[0070] When etching the P1 line, the distance measuring unit 30 senses the height change of the workpiece surface in real time and automatically adjusts the laser focus position, so as to always keep the laser focus precisely positioned on the workpiece surface. This real-time adjustment mechanism is more flexible than simply relying on the distance measuring system to collect preset height data, and can quickly respond to slight changes in the shape of the curved surface.

[0071] Furthermore, when there is no need for real-time feedback of height tracking, when processing multiple identical parts, the height control of the laser scribing head 50 can be carried out in an open loop manner, and the Z-axis position can be controlled by a preset surface height change curve, so that the system can achieve control of estimated height changes at a lower cost.

[0072] The moving module 40 is any component that can drive the laser scribing head 50 to move. Taking the servo motor as an example, the main control unit 20 transmits the position information to the servo control module, and the servo control module transmits the instruction to the servo controller, which drives the servo motor. Finally, the rotation of the servo motor is converted into the vertical movement of the laser scribing head 50 in the Z-axis direction through the ball screw slide, thereby realizing automatic height tracking of the laser scribing head 50 during laser etching.

[0073] Furthermore, the stepper motor can replace the servo motor: in some occasions with relatively low precision requirements, the servo motor can be replaced by a stepper motor. By properly adjusting the step angle and driving frequency of the stepper motor, the precise movement control of the laser scribing head 50 can also be achieved to achieve low-cost application.

[0074] Furthermore, the moving module 40 may also be a device based on pneumatic or electromagnetic drive to achieve a relatively simple height control function, so as to adapt to application scenarios with lower requirements on the real-time accuracy of the Z-axis.

[0075] The reference positioning line of the P1 scribed line is obtained by the following process:

[0076] St201, the main control unit 20 uses the upper and lower cursors of the visual imaging system 10 to capture the coordinates of the upper and lower edges of the P1 scale line in the vertical direction.

[0077] St202, the main control unit 20 uses the average value of the coordinates of multiple different upper and lower cursors as the reference positioning point of the P1 scribed line, and obtains the reference positioning line of the P1 scribed line according to the multiple reference positioning points.

[0078] Specifically, the upper and lower cursors of the visual imaging system 10 capture the upper and lower edge points of multiple P1 lines in the vertical direction, that is, the average value of the upper and lower edge points on the same X-axis is calculated as the P1 line reference positioning point, and the reference positioning line of the P1 line is finally obtained by calculating multiple P1 line reference positioning points.

[0079] Furthermore, the main control unit 20 can replace the intelligent recognition function with an image processing algorithm based on deep learning, analyze the image through a convolutional neural network (CNN), identify pollutants, defects or misidentified marks, thereby improving positioning accuracy and system stability.

[0080] like Figure 7 As shown, P1 line etching also includes the following processes:

[0081] St131, the main control unit 20 controls the movement of the mobile module 40 according to the height information, and etches a number of positioning points on the P1 line;

[0082] St132, the main control unit 20 monitors the height information of the next positioning point on the P1 line in real time according to the distance measuring unit 30, so as to etch the P1 line according to the depth of the P1 line.

[0083] The process of laser generation by the laser scribing head 50 is as follows: the laser emitted by the pulsed laser source on the laser scribing head 50 passes through the optical shutter and the laser energy attenuator in sequence; the laser energy attenuator decomposes the incident laser into two parallel light beams of s-polarization and p-polarization, and adjusts the intensity ratio of the two parallel light beams by rotating the electrically controlled half-wave plate, thereby realizing the control of the incident laser energy; after passing through the optical shutter and the energy attenuator, the incident laser is reflected on the dichroic mirror, and is focused on the surface of the curved perovskite cell through the focusing objective lens to etch the P1 line, P2 line and P3 line.

[0084] Furthermore, alternative devices for laser energy control: In the laser energy regulation part, the electrically controlled half-wave plate can be replaced with an acousto-optic modulator or an electro-optic modulator to achieve control of the laser beam energy and further improve the response speed and stability of the laser output.

[0085] Furthermore, alternative solutions for the focusing lens group: aspherical lenses, multi-layer lens combinations or Fθ lenses can be used to replace the focusing objective lens to achieve higher focusing accuracy and adapt to the laser etching requirements of different surface curvatures.

[0086] P2 line etching also includes the following processes:

[0087] St311, the main control unit 20 controls the movement of the moving module 40 according to the height information, and etches several positioning points on the P2 line.

[0088] St312, the main control unit 20 monitors the height information of the next positioning point on the P2 line in real time according to the distance measuring unit 30, so as to etch the P2 line according to the depth of the P2 line.

[0089] P3 line etching also includes the following processes:

[0090] St411, the main control unit 20 controls the movement of the mobile module 40 according to the height information, and etches several positioning points on the P3 line.

[0091] St412, the main control unit 20 monitors the height information of the next positioning point on the P3 line in real time according to the distance measuring unit 30, so as to etch the P3 line according to the depth of the P3 line.

[0092] The positioning points are points on several paths. The main purpose of using the positioning points to locate the path before etching is to facilitate identification, so that more accurate etching can be performed and it is easier to control. At the same time, because the MCU has stored the height information of the P1 line, when engraving the P2 and P3 lines, it is only necessary to superimpose the offset values ​​in the X-axis and Z-axis directions to reach the relevant engraved line position for engraving. The offset value needs to be increased in the Z-axis direction because the depths of different engraved lines may be different. The offset value can be increased according to the height of the P1 line.

[0093] The main control unit 20 issues an early warning through the following process:

[0094] St50, when etching the P2 line, the main control unit 20 calculates the pixel distance between the upper and lower edges of the P2 etching line in real time through the visual imaging system 10.

[0095] St51, multiply the pixel distance between the upper and lower edges of the P2 scribed line by the correction ratio calibrated by the visual imaging system 10 to obtain the actual P2 scribed line width.

[0096] St52, the main control unit 20 determines in real time whether the actual P2 line width exceeds the preset line width range, and generates an alarm signal and stops etching when it is determined that it exceeds the line width range.

[0097] like Figure 8 As shown, + represents the cursor at the upper and lower edges. The main control unit 20 captures the upper and lower edge points of a certain scale line in the vertical direction through the upper and lower cursors of the visual imaging system 10. The actual pixel distance between the upper and lower cursors is the pixel distance between the upper and lower edges of the corresponding scale line.

[0098] The main control unit 20 issues an early warning through the following process:

[0099] St60, when etching the P3 line, the main control unit 20 captures the upper edge of the P3 etching line in real time through the continuous cursor of the visual imaging system 10.

[0100] St61, the main control unit 20 calculates the slope of the lines connecting the upper edge cursors in real time, and determines whether the slope exceeds the upper and lower limits of the preset slope. If it is determined that the slope exceeds the upper and lower limits of the preset slope, an alarm signal is generated and etching is stopped. Fig. 9 As shown, + is represented by the cursor at the upper edge.

[0101] The invention comprises a main control unit 20, which is connected to a visual imaging system 10, a distance measuring unit 30 and a mobile module 40, and the mobile module 40 is connected to a laser scribing head 50. The visual imaging system 10 is used to obtain a battery image of the surface of a curved perovskite battery, the distance measuring unit 30 is used to monitor the distance between the laser scribing head 50 and the surface of the curved perovskite battery, the mobile module 40 is used to control the movement of the laser scribing head 50, the laser scribing head 50 is used to etch the surface of the curved perovskite battery, and the main control unit 20 is used to execute a method for high-precision laser selective etching of a curved multilayer film system.

[0102] The specific etching process is as follows: 1. When performing P1 line laser etching on the curved perovskite battery, first, through the focusing operation, the CCD imaging unit 12 obtains a high-resolution image of the surface of the curved perovskite battery. The main control unit 20 uses the image processing algorithm to analyze the grayscale and edge features of the image to locate the position of the P1 line. First, the laser scribing head 50 is controlled to etch the positioning pattern in the form of small dots to provide a positioning reference. During laser etching, the laser scribing head 50 generates a laser beam and monitors the height position information of the next positioning reference small dot position in real time through the ranging unit 30. The height position information is converted into a capacitive frequency signal by the ranging unit 30, and a control instruction is generated after the signal processing of the FPGA and the motion control processing of the MCU, and is transmitted to the moving module 40. The moving module 40 controls the vertical movement of the laser scribing head 50 in the Z-axis direction, so as to automatically adjust the height of the laser scribing head 50 when moving to the next position. The distance measuring unit 30 monitors the height information of the next position in real time, and dynamically adjusts the height of the laser scribing head 50 after completing the etching of the current position, so as to achieve the precise etching of the P1 line in the Y-axis direction and achieve the Z-axis closed-loop height control effect. The height position information of each position is stored in the MCU to facilitate the subsequent etching of the P2 and P3 lines. The P1, P2, and P3 line engraving effect diagram is shown in the attached figure. Figure 5 shown.

[0103] 2. P2 line etching: When engraving the P2 line of the curved perovskite battery, the P1 line and the P1 pattern are captured by the CCD imaging unit 12, the reference positioning line of the P1 engraved line is calculated, and the position of the P2 line is determined by a fixed offset distance relative to the reference positioning line. The specific operation is as follows: the upper and lower cursors of the CCD imaging unit 12 capture the upper and lower edges of the P1 engraved line respectively, and the average coordinates of the upper and lower edges of the P1 engraved line in the CCD imaging unit 12 are used as the reference positioning points of the P1 line, and the reference positioning line is composed of several reference positioning points. According to the P1 line reference positioning line, an offset value is added on the X-axis to make the laser scribing head 50 reach the P2 line position. Similarly, the positioning point is first etched according to the height information, and then the depth requirement of the P2 engraved line is superimposed based on the height information to realize the etching of the P2 line. Since the offset value added to the P2 line on the X-axis is to add the coating or spin coating thickness on the basis of the P1 reference positioning line and then process it, it is only necessary to superimpose a fixed offset on the X-axis to accurately locate the P2 position. By using the height data stored in the MCU and superimposing the depth requirement of the P2 scribing line, the mobile module 40 directly controls the Z-axis height of the laser scribing head 50 to ensure closed-loop follow-up height control of the laser scribing head 50 in the Z-axis direction.

[0104] 3. Intelligent identification and alarm of P2 line: When capturing the P2 line, the main control unit 20 adds intelligent identification and judgment functions, and automatically triggers an alarm when the CCD imaging unit 12 detects an abnormality in the marking line. The main control unit 20 calculates the actual pixel distance between the upper and lower edges of the P2 scribed line, and multiplies the calculation result by the correction ratio calibrated by the CCD imaging unit 12 to obtain the actual P2 scribed line width. When the actual P2 scribed line width exceeds the set judgment range, the system will issue an alarm to indicate that the positioning deviation may be caused by misidentification of white spots (caused by silicon powder or other contaminants in the PECVD deposition process).

[0105] 4. P3 line etching: When engraving the P3 line of the curved perovskite battery, the P1 line and the P1 pattern are captured by the CCD imaging unit 12, the reference positioning line of the P1 engraved line is calculated, and the position of the P3 line is determined by a fixed offset distance relative to the reference positioning line. The specific operation is as follows: the upper and lower cursors of the CCD imaging unit 12 capture the upper and lower edges of the P1 engraved line respectively, and the average coordinates of the upper and lower edges of the P1 engraved line in the CCD imaging unit 12 are used as the reference positioning points of the P1 line, and the reference positioning line is composed of several reference positioning points. According to the P1 line reference positioning line, an offset value is added on the X-axis to make the laser scribing head 50 reach the P3 line position. Similarly, the positioning point is first etched according to the height information, and then the depth requirement of the P3 engraved line is superimposed based on the height information to realize the etching of the P3 line. Since the offset value added to the P3 line on the X-axis is to add the coating or spin coating thickness on the basis of the P1 reference positioning line and then process it, it is only necessary to superimpose a fixed offset on the X-axis to accurately locate the P3 position. By using the height data stored in the MCU and superimposing the depth requirement of the P3 scribing line, the mobile module 40 directly controls the Z-axis height of the laser scribing head 50 to ensure closed-loop follow-up height control of the laser scribing head 50 in the Z-axis direction.

[0106] 5. Intelligent identification and alarm of P3 line: When capturing the P3 line, the main control unit 20 adds intelligent identification and judgment functions, and automatically triggers an alarm when the CCD imaging unit 12 detects an abnormality in the marking line. The main control unit 20 captures the upper edge of the P3 scribed line in real time through the continuous cursor of the visual imaging system 10, and uses the slope of several continuous upper cursor lines as the judgment standard. When the captured line slope exceeds the upper and lower limits, the system will also alarm, indicating that the positioning deviation may be caused by misidentification of white spots (caused by silicon powder or other contaminants in the PECVD deposition process).

[0107] Furthermore, the laser etching device and laser etching method of the present application can also be applied to a variety of materials, such as laser etching for flexible electronic devices, to achieve circuit or pattern etching on various curved surfaces or soft substrates.

[0108] Furthermore, it is used in the packaging process of semiconductor chips to achieve high-precision laser scribing of curved packaging materials for chip pin marking or pin separation.

[0109] Furthermore, in the manufacturing process of curved materials, fine etching is performed on curved glass or curved display screen substrate to improve the appearance and functionality of the display screen.

[0110] Furthermore, it is used for marking and etching of metal surfaces, such as etching serial numbers, QR codes, micro patterns, etc. on curved metal materials to achieve marking and decorative functions.

[0111] Furthermore, for laser etching of planar perovskite solar cells, the laser etching device and laser etching method of the present application are specially designed for curved perovskite solar cells, and can perform laser etching of planar perovskite solar cells and other planar materials without using a curved surface etching step.

[0112] The above are only preferred embodiments of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.

Claims

1. A method for high-precision laser selective etching of a curved surface multilayer film system, characterized in that: The process includes: St10, obtaining a battery image of the surface of the curved perovskite battery through a visual imaging system (10), and transmitting the battery image to a main control unit (20); St11, the main control unit (20) establishes a coordinate system based on the battery image, and analyzes the grayscale and edge features of the battery image to obtain P1 position information of the P1 line; St12, obtaining height information between the laser scribing head (50) and the surface of the curved perovskite cell through a distance measuring unit (30), and transmitting the height information to a main control unit (20) for storage; St13, the main control unit (20) controls the movement of the moving module (40) based on the height information and according to the depth of the P1 scribed line, thereby driving the laser scribing head (50) to etch the P1 line on the surface of the curved perovskite cell through the moving module (40) to obtain the P1 scribed line; St20, the main control unit (20) obtains the reference positioning line of the P1 scribed line through the visual imaging system (10); St30, the main control unit (20) adds an offset value to the battery image according to the position of the P2 line relative to the reference positioning line, thereby obtaining P2 position information of the P2 line; St31, the main control unit (20) controls the movement of the moving module (40) based on the height information and according to the depth of the P2 scribed line, thereby driving the laser scribing head (50) to etch the P2 line on the surface of the curved perovskite battery through the moving module (40) to obtain the P2 scribed line; St40, the main control unit (20) adds an offset value to the battery image according to the position of the P3 line relative to the reference positioning line, thereby obtaining P3 position information of the P3 line; St41, the main control unit (20) controls the movement of the moving module (40) based on the height information and according to the depth of the P3 scribed line, thereby driving the laser scribing head (50) to etch the P3 line on the surface of the curved perovskite battery through the moving module (40) to obtain the P3 scribed line; The distance measuring unit (30) comprises a capacitive sensing module (31) and an oscillating circuit (32), wherein the capacitive sensing module (31) and the oscillating circuit (32) are connected, and recognizing the height information comprises the following process: St121, the capacitance sensing module (31) is used to monitor in real time the plate capacitance value between the laser scribing head (50) and the surface of the curved perovskite battery; St122, when the capacitance value changes, the output capacitance frequency value of the oscillation circuit (32) changes according to the following relationship: Wherein, f is the capacitance frequency value, L is the inductance of the oscillation circuit (32), and C is the capacitance value of the capacitance sensing module (31); St123, the main control unit (20) calculates the capacitance value of the capacitance sensor module (31) through the capacitance frequency value, then converts the capacitance value into height information, and sends the height information to the mobile module (40). The relationship between the height information and the capacitance value is as follows: Where C is the capacitance value of the capacitive sensing module, ε0 is the vacuum dielectric constant, and ε r is the relative dielectric constant, s is the plate area of ​​the capacitive sensing module (31), d is the distance between the two plates of the capacitive sensing module (31), and the distance between the two plates of the capacitive sensing module (31) is the height between the laser scribing head (50) and the surface of the perovskite solar cell.

2. The method for high-precision laser selective etching of a curved surface multilayer film system according to claim 1, characterized in that: The battery image is acquired through the following process: St101, the visual imaging system (10) comprises an illumination unit (11) and a CCD imaging unit (12), wherein the light emitted by the illumination unit (11) is reflected by a beam splitter, passes through a dichroic mirror and a focusing lens, and is irradiated onto the surface of a curved perovskite cell, and the reflected light passes through the focusing lens, the dichroic mirror, the beam splitter and the focusing lens in sequence, and finally reaches the CCD imaging unit (12).

3. The method for high-precision laser selective etching of a curved surface multilayer film system according to claim 1, characterized in that: The reference positioning line of the P1 scribed line is obtained by the following process: St201, the main control unit (20) captures the coordinates of the upper and lower edges of the P1 line perpendicular to the vertical line through the upper and lower cursors of the visual imaging system (10); St202, the main control unit (20) uses the average value of the coordinates of a plurality of different upper and lower cursors as the reference positioning point of the P1 engraved line, and obtains the reference positioning line of the P1 engraved line according to the plurality of reference positioning points.

4. The method for high-precision laser selective etching of a curved surface multilayer film system according to claim 1, characterized in that: P1 line etching also includes the following processes: St131, the main control unit (20) controls the movement of the moving module (40) according to the height information, and etches a plurality of positioning points on the P1 line; St132, the main control unit (20) monitors the height information of the next positioning point on the P1 line in real time according to the distance measuring unit (30), thereby etching the P1 line according to the depth of the P1 line.

5. The method for high-precision laser selective etching of a curved surface multilayer film system according to claim 1, characterized in that: P2 line etching also includes the following processes: St311, the main control unit (20) controls the movement of the moving module (40) according to the height information, and etches a plurality of positioning points on the P2 line; St312, the main control unit (20) monitors the height information of the next positioning point on the P2 line in real time according to the distance measuring unit (30), thereby etching the P2 line according to the depth of the P2 line.

6. The method for high-precision laser selective etching of a curved surface multilayer film system according to claim 1, characterized in that: P3 line etching also includes the following processes: St411, the main control unit (20) controls the movement of the moving module (40) according to the height information, and etches a plurality of positioning points on the P3 line; St412, the main control unit (20) monitors the height information of the next positioning point under the P3 line in real time according to the distance measuring unit (30), thereby etching the P3 line according to the depth of the P3 line.

7. A method for high-precision laser selective etching of a curved surface multilayer film system according to any one of claims 1 to 6, characterized in that: The main control unit (20) performs early warning through the following process: St50, when etching the P2 line, the main control unit (20) calculates the pixel distance between the upper and lower edges of the P2 etching line in real time through the visual imaging system (10); St51, multiply the pixel distance between the upper and lower edges of the P2 scribed line by the correction ratio calibrated by the visual imaging system (10) to obtain the actual P2 scribed line width; St52, the main control unit (20) determines in real time whether the actual P2 line width exceeds a preset line width range, and generates an alarm signal and stops etching when it is determined that the line width exceeds the range.

8. A method for high-precision laser selective etching of a curved surface multilayer film system according to any one of claims 1 to 6, characterized in that: The main control unit (20) performs early warning through the following process: St60, when etching the P3 line, the main control unit (20) captures the upper edge of the P3 etching line in real time through the continuous cursor of the visual imaging system (10); St61, the main control unit (20) calculates the slope of the line connecting several upper edge cursors in real time, and determines whether the slope exceeds the upper and lower limits of the preset slope. If it is determined that the slope exceeds the upper and lower limits of the preset slope, an alarm signal is generated and etching is stopped.

9. A device for high-precision laser selective etching of curved surface multilayer film system, characterized in that: A method for executing a high-precision laser selective etching of a curved multilayer film system as described in any one of claims 1 to 8, comprising a main control unit (20), wherein the main control unit (20) is connected to a visual imaging system (10), a distance measuring unit (30) and a moving module (40), wherein the moving module (40) is connected to a laser scribing head (50), wherein the visual imaging system (10) is used to obtain a battery image of a curved perovskite battery surface, wherein the distance measuring unit (30) is used to monitor the distance between the laser scribing head (50) and the curved perovskite battery surface, wherein the moving module (40) is used to control the movement of the laser scribing head (50), and wherein the laser scribing head (50) is used to etch the curved perovskite battery surface.

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