Heat dissipation material of electronic equipment and preparation method of heat dissipation material

Abstract

The invention relates to a heat dissipation material for electronic equipment and a preparation method of the heat dissipation material. According to the technical scheme, the heat dissipation material is prepared from an aluminum source and a carbon source through heating, pre-sintering and nitriding processes, the heat dissipation material is tightly attached to the surface of a chip body to form a heat dissipation layer, and the preparation method comprises the following steps that firstly, the aluminum source and the carbon source are mixed according to a certain proportion to form a mixed raw material solution; then carrying out heating treatment on the mixed raw material solution, so that the components in the mixed raw material solution fully react; secondly, pre-sintering the heated mixture to remove impurities and promote the densification of the material; and finally, nitriding the pre-sintered material to form a heat dissipation material with a high heat conductivity coefficient, and combining the heat dissipation layer with the chip body in a thermocompression bonding, surface activation bonding, anodic bonding or gluing manner to ensure a good heat conduction effect. The preparation method has the beneficial effects of simplicity, stability, reliability, convenience in large-scale production, low cost, unique preparation method and capability of improving the heat-conducting property.

Description

Technical Field

[0001] The invention belongs to the field of electronic equipment and relates to a heat dissipation material for electronic equipment and a preparation method thereof. Background Art

[0002] With the rapid development of semiconductor technology, chip power continues to increase, and heat dissipation issues are becoming increasingly prominent. Traditional chip heat dissipation methods mostly rely on external structures such as heat sinks and heat pipes, and improve heat dissipation efficiency by increasing the heat dissipation area or using phase change materials. However, these methods often seem to be inadequate when dealing with high-power density chips and are difficult to meet the growing heat dissipation needs.

[0003] Therefore, the present invention provides a heat dissipation material for electronic equipment and a preparation method thereof to solve the above problems. Summary of the invention

[0004] In view of the problems existing in the prior art, the present invention discloses a heat dissipation material for electronic equipment. The technical solution adopted is that the heat dissipation material is made of aluminum source and carbon source through heating, pre-sintering and nitriding processes, and is tightly attached to the surface of the chip body to form a heat dissipation layer.

[0005] As a preferred embodiment of the present invention, the method for preparing the heat dissipation material for electronic equipment comprises the following steps: Step 1: Mixing the aluminum source and the carbon source in a certain proportion to form a mixed raw material liquid; Step 2: heating the mixed raw material liquid to allow the components therein to fully react; Step 3: pre-sintering the heated mixture to remove impurities and promote densification of the material; Step 4: Perform nitriding treatment on the pre-fired material to form a heat dissipation material with high thermal conductivity.

[0006] As a preferred embodiment of the present invention, the aluminum source is aluminum oxide powder, the carbon source is graphite powder, and the mass ratio of the two is 1:0.5 to 1:2.

[0007] As a preferred embodiment of the present invention, the temperature of the heating treatment is 800°C to 1200°C, and the time is 1 hour to 4 hours.

[0008] As a preferred embodiment of the present invention, the pre-sintering treatment is carried out at a temperature of 1200° C. to 1600° C. and for a time of 2 to 6 hours.

[0009] As a preferred embodiment of the present invention, the temperature of the nitriding treatment is 1400°C to 1800°C, the time is 4 hours to 10 hours, and the nitrogen flow rate is 50L / min to 200L / min.

[0010] As a preferred solution of the present invention, the heat dissipation layer is combined with the chip body by means of thermocompression bonding, surface activated bonding, anodic bonding or gluing to ensure a good heat conduction effect.

[0011] As a preferred embodiment of the present invention, the surface activated bonding is achieved by bombarding the material surface with high-energy charged particles in the plasma to destroy the chemical bonds of the surface molecules and form active groups or defects.

[0012] Beneficial effects of the present invention: 1. The heat dissipation material prepared by the present invention not only has excellent thermal conductivity, but also has good thermal stability and mechanical properties, and can effectively reduce the operating temperature of the chip and improve the service life and operation stability of the product. 2. At the same time, the preparation method of this material is simple and low-cost, suitable for large-scale industrial production, and has broad application prospects and significant economic benefits. 3. The heat dissipation material provided by the present invention is prepared through a unique combination of aluminum source and carbon source, and through complex process treatments such as heating, pre-sintering and nitriding, to obtain a heat dissipation material with a high thermal conductivity coefficient. The thermal conductivity of this material is significantly improved compared with traditional materials, and the preparation method is unique. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic diagram of the overall process of the present invention;

[0014] Figure 2 It is a schematic diagram of the process of the method for preparing the heat dissipation material of the present invention. DETAILED DESCRIPTION

[0015] Example 1

[0016] like Figure 1 to Figure 2 As shown, the heat dissipation material for an electronic device described in the present invention adopts a technical solution in which the heat dissipation material is made from an aluminum source and a carbon source through heating, pre-sintering and nitriding processes, and is tightly attached to the surface of the chip body to form a heat dissipation layer.

[0017] The method for preparing the heat dissipation material of the electronic device is characterized by comprising the following steps:

[0018] Step 1: Select 3N purity alumina powder as the aluminum source and high purity graphite as the carbon source, mix the aluminum source and the carbon source in a certain ratio of 1:0.5 to form a mixed raw material liquid.

[0019] Step 2: heating the mixed raw material liquid to allow the components therein to fully react;

[0020] Step 3: pre-sintering the heated mixture to remove impurities and promote densification of the material;

[0021] Step 4: Perform nitriding treatment on the pre-fired material to form a heat dissipation material with high thermal conductivity.

[0022] The heating treatment is performed at a temperature of 800° C. for a time of 1 to 4 hours.

[0023] The pre-firing treatment is carried out at a temperature of 1200°C and for a period of 2 to 6 hours.

[0024] The temperature of the nitriding treatment is 1400° C., the time is 4 to 10 hours, and the nitrogen flow rate is 50 L / min.

[0025] By utilizing high-energy charged particles in the plasma to bombard the surface of the chip material, the chemical bonds of the surface molecules are destroyed to form active groups or defects. The heat dissipation material prepared above is bonded to the chip material through the formed active groups or defects, thereby enhancing the bonding ability between the chip material surface and the heat dissipation material, thereby improving the heat conduction capacity and efficiency, and finally dissipating the heat generated by the chip through the thermal conductive material.

[0026] Example 2

[0027] like Figure 1 to Figure 2 As shown, the heat dissipation material for an electronic device described in the present invention adopts a technical solution in which the heat dissipation material is made from an aluminum source and a carbon source through heating, pre-sintering and nitriding processes, and is tightly attached to the surface of the chip body to form a heat dissipation layer.

[0028] The method for preparing the heat dissipation material of the electronic device is characterized by comprising the following steps:

[0029] Step 1: Select 3N purity alumina powder as the aluminum source and high purity graphite as the carbon source, mix the aluminum source and the carbon source in a certain ratio of 1:1.2 to form a mixed raw material liquid.

[0030] Step 2: heating the mixed raw material liquid to allow the components therein to fully react;

[0031] Step 3: pre-sintering the heated mixture to remove impurities and promote densification of the material;

[0032] Step 4: Perform nitriding treatment on the pre-fired material to form a heat dissipation material with high thermal conductivity.

[0033] The heating treatment is performed at a temperature of 1000° C. for a time of 1 to 4 hours.

[0034] The pre-sintering treatment is carried out at a temperature of 1400° C. for a period of 2 to 6 hours.

[0035] The temperature of the nitriding treatment is 1600° C., the time is 4 to 10 hours, and the nitrogen flow rate is 130 L / min.

[0036] The heat dissipation material prepared above is bonded to the chip material by thermal compression bonding, thereby enhancing the bonding ability between the chip material surface and the heat dissipation material, thereby improving the heat conduction capacity and efficiency, and finally dissipating the heat generated by the chip through the thermal conductive material.

[0037] Example 3

[0038] like Figure 1 to Figure 2 As shown, the heat dissipation material for an electronic device described in the present invention adopts a technical solution in which the heat dissipation material is made from an aluminum source and a carbon source through heating, pre-sintering and nitriding processes, and is tightly attached to the surface of the chip body to form a heat dissipation layer.

[0039] The method for preparing the heat dissipation material of the electronic device is characterized by comprising the following steps:

[0040] Step 1: Select 3N purity alumina powder as the aluminum source and high purity graphite as the carbon source, mix the aluminum source and the carbon source in a certain ratio of 1:2 to form a mixed raw material liquid.

[0041] Step 2: heating the mixed raw material liquid to allow the components therein to fully react;

[0042] Step 3: pre-sintering the heated mixture to remove impurities and promote densification of the material;

[0043] Step 4: Perform nitriding treatment on the pre-fired material to form a heat dissipation material with high thermal conductivity.

[0044] The heating treatment is performed at a temperature of 1200° C. for a time of 1 to 4 hours.

[0045] The pre-sintering treatment is carried out at a temperature of 1600° C. for a period of 2 to 6 hours.

[0046] The temperature of the nitriding treatment is 1800° C., the time is 4 to 10 hours, and the nitrogen flow rate is 200 L / min.

[0047] The heat dissipation material prepared above is bonded to the chip material by anodic bonding, thereby enhancing the bonding ability between the chip material surface and the heat dissipation material, thereby improving the heat conduction capacity and efficiency, and finally dissipating the heat generated by the chip through the thermal conductive material.

[0048] The electrical connection methods or structures not described in detail herein are prior art.

[0049] Although the specific embodiments of the present invention are described in detail above, the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in this field without departing from the purpose of the present invention, and modifications or deformations without creative labor are still within the protection scope of the present invention.

Claims

1. A heat dissipation material for electronic equipment, characterized in that: The heat dissipation material is made from an aluminum source and a carbon source through heating, pre-sintering and nitriding processes, and is closely attached to the surface of the chip body to form a heat dissipation layer.

2. A method for preparing a heat dissipation material for an electronic device, characterized in that: The following steps are involved: Step 1: Mixing the aluminum source and the carbon source in a certain proportion to form a mixed raw material liquid; Step 2: heating the mixed raw material liquid to allow the components therein to fully react; Step 3: pre-sintering the heated mixture to remove impurities and promote densification of the material; Step 4: Perform nitriding treatment on the pre-fired material to form a heat dissipation material with high thermal conductivity.

3. The preparation method according to claim 2, characterized in that: The aluminum source is aluminum oxide powder, and the carbon source is graphite powder, and the mass ratio of the two is 1:0.5 to 1:

2.

4. The preparation method according to claim 2, characterized in that: The heating treatment is performed at a temperature of 800° C. to 1200° C. and for a time of 1 hour to 4 hours.

5. The preparation method according to claim 2, characterized in that: The pre-sintering treatment is performed at a temperature of 1200° C. to 1600° C. and for a time of 2 hours to 6 hours.

6. The preparation method according to claim 2, characterized in that: The temperature of the nitriding treatment is 1400° C. to 1800° C., the time is 4 hours to 10 hours, and the nitrogen flow rate is 50 L / min to 200 L / min.

7. The heat dissipation material for electronic equipment according to claim 1, characterized in that: The heat dissipation layer is combined with the chip body by means of thermocompression bonding, surface activation bonding, anodic bonding or gluing to ensure a good heat conduction effect.

8. The heat dissipation material for electronic equipment according to claim 7, characterized in that: The surface activated bonding utilizes high energy charged particles in plasma to bombard the material surface, thereby destroying the chemical bonds of surface molecules and forming active groups or defects.

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