Display panel

Abstract

The invention provides a display panel. The display panel comprises a thin film transistor layer, a common electrode layer and an in-plane common electrode signal line, the first side edge of the thin film transistor layer connects the common electrode layer with an in-plane common electrode signal line through a common electrode end; the second side edge of the thin film transistor layer is provided with an electrode opening and a conductive layer structure; the electrode holes are filled with conductors, and the conductors are respectively connected with the conductive layer structure and the common electrode layer. And the conductive layer structure is also connected with the in-plane common electrode signal line. An in-plane common electrode signal line is connected with a common electrode layer through a common electrode end on a first side edge of a thin film transistor layer, and an electrode opening and a conductive layer structure are arranged on a second side edge of the thin film transistor layer, so that the in-plane common electrode signal line is connected with the common electrode layer; the input of common electrode signals can be realized on the two side edges of the thin film transistor layer, so that the difference of the signal recovery capability of the common electrode is eliminated, and the problems of crosstalk or uneven display and the like are avoided.

Description

Technical Field

[0001] The present invention relates to the field of display, and in particular to a display panel. Background Art

[0002] In the prior art, a whole surface of ITO (Indium tin oxide) conductive glass is arranged in the AA area of ​​the display panel to provide a common electrode signal COM, and the common electrode signal line in the surface is connected to the ITO through the COF (Chip OnFlex) of the thin-film transistor TFT layer to access the COM signal; however, the COF is only arranged on one side of the TFT layer. Due to the influence of the in-plane coupling capacitance and the like, there is a difference in the recovery ability of the COM signal when the COM signal is transmitted from one side of the COF to the other side, thereby causing problems such as crosstalk and uneven display. Summary of the invention

[0003] The main purpose of the present invention is to provide a display panel, aiming to solve the problem of differences in COM signal recovery capabilities in the prior art.

[0004] To achieve the above-mentioned purpose, the present invention provides a display panel, which includes a thin film transistor layer, a common electrode layer and an in-plane common electrode signal line; the first side of the thin film transistor layer connects the common electrode layer to the in-plane common electrode signal line through a common electrode terminal; the second side of the thin film transistor layer is provided with an electrode opening and a conductive layer structure, wherein the second side is arranged opposite to the first side; the electrode opening is filled with a conductor, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; the conductive layer structure is also connected to the in-plane common electrode signal line.

[0005] Optionally, the display panel further includes a filter layer and a sealant; wherein:

[0006] The filter layer is arranged opposite to the thin film transistor layer, and the sealant is arranged between the side edge of the filter layer and the side edge of the thin film transistor layer;

[0007] A colloid through hole is arranged in the area of ​​the sealant opposite to the electrode opening, the conductor is filled in the colloid through hole, and overflows through the electrode opening to connect with the common electrode layer.

[0008] Optionally, the filter layer includes an organic planar layer;

[0009] A light shielding layer disposed on the organic flat surface;

[0010] A first substrate disposed on the light shielding layer;

[0011] A polarizing layer is disposed on the first substrate.

[0012] Optionally, it is characterized in that the thin film transistor layer includes a second substrate, the conductive layer structure is arranged on the second substrate, and the electrode opening is arranged on the second substrate;

[0013] The conductive layer structure includes a first metal layer disposed on the second substrate, the first metal layer being connected to the in-plane common electrode signal line;

[0014] a second metal layer disposed on the first metal layer;

[0015] A first conductive glass layer is disposed on the second metal layer, and the first conductive glass layer is in contact with the conductor.

[0016] Optionally, the thin film transistor layer further includes an organic film layer disposed on the second metal layer;

[0017] The organic film layer is provided with a first opening opposite to the electrode opening, and the first opening is sloped on a side facing the electrode opening, and the first conductive glass layer covers the side of the organic film layer from above the organic film layer and extends to the second substrate;

[0018] The organic film layer is provided with a second opening, and the first conductive glass layer is in contact with the second metal layer through the second opening.

[0019] Optionally, the conductive layer structure further includes a second insulating layer disposed between the first conductive glass layer and the organic film layer; the second insulating layer is provided with a third opening relative to the electrode opening, and the third opening is smaller than the aperture of the first opening; the second insulating layer is disconnected at the side of the organic film layer, and the first conductive glass layer forms a groove between the second insulating layer and the side of the organic film layer;

[0020] The second insulating layer opens at the second opening of the organic film layer.

[0021] Optionally, the conductive layer structure further includes a second conductive glass layer disposed between the second insulating layer and the organic film layer;

[0022] The second conductive glass layer covers the side of the organic film layer from above the organic film layer;

[0023] Between the first opening and the second opening of the organic film layer, a fourth opening is provided in the contact section of the first conductive glass layer with the sealant, and the second insulating layer is in contact with the sealant through the fourth opening;

[0024] The second insulating layer is provided with a fifth opening between the fourth opening and the second opening;

[0025] The first conductive glass layer contacts the second conductive glass layer through the fifth opening.

[0026] Optionally, the conductive layer structure further includes a gate insulating layer disposed between the first metal layer and the second metal layer; wherein:

[0027] The gate insulating layer is provided with a sixth opening at a position where the gate insulating layer contacts the first metal layer and the second metal layer at the same time, and the first metal layer contacts the second metal layer through the sixth opening.

[0028] Optionally, the conductive layer structure further includes a first insulating layer disposed on the gate insulating layer and the second metal layer and below the organic film layer; the first insulating layer opens at the second opening of the organic film layer.

[0029] Optionally, the conductor is conductive silver paste.

[0030] The present invention proposes a display panel, which includes a thin film transistor layer, a common electrode layer and an in-plane common electrode signal line; the first side of the thin film transistor layer connects the common electrode layer with the in-plane common electrode signal line through a common electrode terminal; the second side of the thin film transistor layer is provided with an electrode opening and a conductive layer structure, wherein the second side is arranged opposite to the first side; the electrode opening is filled with a conductor, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; the conductive layer structure is also connected to the in-plane common electrode signal line. By connecting the in-plane common electrode signal line with the common electrode layer through the common electrode terminal on the first side of the thin film transistor layer, and providing an electrode opening and a conductive layer structure on the second side of the thin film transistor layer to connect the in-plane common electrode signal line with the common electrode layer, the input of the common electrode signal can be realized on both sides of the thin film transistor layer, thereby eliminating the difference in the recovery ability of the common electrode signal and avoiding the problems of crosstalk or uneven display. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0032] Figure 1 It is a schematic structural diagram of an embodiment of a display panel of the present invention;

[0033] Figure 2It is a structural schematic diagram of a display panel in the prior art;

[0034] Figure 3 The display panel of the present invention is Figure 1 A-A' cross-sectional view;

[0035] Figure 4 This is a front structural diagram of the display panel of the present invention at the electrode opening position;

[0036] Figure 5 It is a schematic diagram of the preparation process of the thin film transistor layer in the display panel of the present invention.

[0037] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings.

[0038] Description of Figure Numbers:

[0039] Label name Label name 100 Thin Film Transistor Layer 200 Common electrode layer 110 Electrode opening COM1 In-plane common electrode signal line 120 Public electrode terminal B1 First substrate B2 Second substrate Seal Sealant DETAILED DESCRIPTION

[0040] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0043] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0044] The present invention provides a display panel, see Figure 1 , Figure 1 This is a functional module diagram of an embodiment of a display panel of the present invention. In this embodiment, the display panel includes a thin film transistor layer 100, a common electrode layer 200, and an in-plane common electrode signal line COM1; the first side of the thin film transistor layer 100 connects the common electrode layer 200 to the in-plane common electrode signal line COM1 through a common electrode terminal 120; the second side of the thin film transistor layer 100 is provided with an electrode opening 110 and a conductive layer structure, wherein the second side is arranged opposite to the first side; the electrode opening 110 is filled with a conductor, and the conductor is respectively connected to the conductive layer structure and the common electrode layer 200; the conductive layer structure is also connected to the in-plane common electrode signal line COM1.

[0045] First, see Figure 2 , Figure 2 is a schematic diagram of a TFT layer in the prior art; in the prior art, one side of the TFT layer, i.e. Figure 2 The lower side of the example is provided with a signal transmission device such as COF or FPC (Flexible Printed Circuit); the common electrode signal line in the plane is connected to one end of the COF through the common electrode terminal D provided on the lower side of the TFT layer, and the other end of the COF is connected to the common electrode signal line outside the plane, thereby realizing the transmission of the common electrode signal outside the plane to the common electrode signal line in the plane; it can be understood that since only the common electrode terminal D located on the lower side of the TFT layer is used as the input of the common electrode signal, all common electrode signals in the plane are output by the common electrode terminal D, and for the area far away from the common electrode terminal D, such as the upper side of the TFT layer, due to the existence of coupling capacitance in the line, the common electrode signal will be lost more when it is transmitted to the upper side of the TFT layer, thereby making the common electrode signal in the plane uneven, causing uneven display, such as crosstalk problem; especially for the display panel of FFS (Fringe Field Switch) mode, its coupling capacitance is larger than that of other display modes, so the greater the unevenness of the common electrode signal, the greater the unevenness of the common electrode signal.

[0046] In this embodiment, a common electrode terminal 120 is set on the first side of the TFT layer, and the in-plane common electrode signal line COM1 and the common electrode layer 200 are connected through the common electrode terminal 120; the specific setting of the first side of the TFT layer can be selected based on actual needs; and the common electrode signal is input from the first side.

[0047] It can be understood that the common electrode layer 200 is a layer for providing common electrode signals. Specifically, the common electrode signals can be introduced from the common electrode layer 200 into corresponding wirings for transmission.

[0048] In this embodiment, in addition to setting a common electrode signal input on the first side of the TFT layer, a common electrode signal input is also set on the second side of the TFT layer. It can be understood that the first side of the TFT layer is opposite to the second side, and the common electrode signal is input from two opposite sides of the TFT layer, thereby eliminating or weakening the influence of the coupling capacitance.

[0049] Specifically, an electrode opening 110 is made on the second side of the TFT layer, and the common electrode layer 200 provides a common electrode signal at the position corresponding to the electrode opening 110. The specific method of providing the common electrode signal may be to set relevant signal lines or electrode points. Therefore, after the electrode opening 110 is made on the TFT layer, it is possible to contact the common electrode layer 200 below the TFT layer through the electrode opening 110; at the same time, a conductor is filled in the electrode opening 110 so that the conductor can contact the common electrode layer 200; and a conductive layer structure is set between the conductor and the in-plane common electrode signal line COM1, so that the common electrode signal provided by the common electrode layer 200 can reach the in-plane common electrode signal line COM1 through the conductor and the conductive layer structure in sequence, thereby realizing the input of the common electrode signal on the second side of the TFT layer.

[0050] The specific material of the conductor can be selected based on actual needs, such as conductive silver paste Ag.

[0051] It should be noted that the number of electrode openings 110 can be one or more, and can be set based on actual needs; for each electrode opening 110, a corresponding conductive layer structure and a filling conductor are set respectively, so as to realize the input of common electrode signals at multiple points on the second side of the TFT layer; the specific opening method of the electrode opening 110 can be set based on actual needs, such as glass through-hole technology.

[0052] In this embodiment, the in-plane common electrode signal line COM1 is connected to the common electrode layer 200 through the common electrode terminal 120 on the first side of the thin film transistor layer 100, and the electrode opening 110 and the conductive layer structure are provided on the second side of the thin film transistor layer 100 to connect the in-plane common electrode signal line COM1 to the common electrode layer 200, so that the input of the common electrode signal can be realized on both sides of the thin film transistor layer 100, thereby eliminating the difference in the recovery ability of the common electrode signal and avoiding the problems of crosstalk or display unevenness.

[0053] Further, see Figure 1 , Figure 3 , Figure 4 , the display panel also includes a filter layer and a sealant Seal; wherein:

[0054] The filter layer is arranged opposite to the thin film transistor layer 100, and the sealant Seal is arranged between the side edge of the filter layer and the side edge of the thin film transistor layer 100;

[0055] A colloid through hole is provided in the area of ​​the sealant Seal opposite to the electrode opening 110 , and the conductor is filled in the colloid through hole and overflows through the electrode opening 110 to be connected with the common electrode layer 200 .

[0056] The filter layer is a CF (Color Filter) layer; after the TFT layer and the CF layer are prepared separately, they are bonded together by means of a sealant Seal. It can be understood that the sealant Seal is not light-transmissive. Therefore, in order to avoid affecting the pixel display within the surface, the sealant Seal is arranged on the side of the filter layer and the thin film transistor layer 100; that is, a structure of a TFT layer, a sealant Seal, and a CF layer from bottom to top is formed; and in order to realize the input of the common electrode signal on the second side of the TFT layer, it is necessary to make an electrode opening 110 on the TFT layer and fill it with conductive silver paste Ag to establish a connection with the common electrode layer 200; after making the electrode opening 110 on the TFT layer, the conductive silver paste Ag is filled in. In order to ensure that the conductive silver paste Ag can contact with the common electrode layer 200, when filling the conductive silver paste Ag, it is necessary to fill the conductive silver paste Ag until it overflows, and the platform formed by the overflowing part is used to contact with the common electrode layer 200. It should be noted that the conductive silver paste Ag and the common electrode layer 200 may be in direct contact or indirect contact, such as by providing a flexible conductive adhesive on the common electrode layer 200 and then contacting the conductive silver paste Ag through the flexible conductive adhesive to achieve input of the common electrode signal.

[0057] In order to provide a contact area between the conductive silver paste Ag and the conductive layer structure of the TFT layer, a colloidal through hole is opened in the sealant Seal in the area opposite to the electrode opening 110. It can be understood that the colloidal through hole is connected to the electrode opening 110. When the conductive silver paste Ag is filled, the conductive silver paste Ag fills the colloidal through hole and the electrode opening 110 and then overflows.

[0058] Further, the filter layer includes an organic flat layer;

[0059] A light shielding layer BM disposed on the organic flat surface;

[0060] A first substrate B1 disposed on the light shielding layer;

[0061] A polarizing layer POL is disposed on the first substrate B1.

[0062] The organic flat layer Organic is used to provide a flat surface for the upper structure; the light shielding layer BM is used to prevent light from leaking from the edge of the display screen; the first substrate B1 is a glass substrate; and the polarizing layer POL is used to eliminate reflected light from the external environment.

[0063] It can be understood that in actual preparation, the thin film transistor layer 100 and the CF layer need to be prepared separately and then aligned. Generally, the CF layer is turned upside down and aligned with the thin film transistor layer 100; therefore, when preparing the CF layer, the preparation order of each layer is opposite to the above structure. Specifically, the polarizing layer POL is prepared first, and the first substrate B1 is prepared on the polarizing layer POL. The shading layer BM is prepared on the first substrate B1; after the prepared CF layer is turned upside down, the above structure is formed.

[0064] It should be noted that the specific structure of the filter layer can be set based on actual needs, and this embodiment exemplifies a feasible approach.

[0065] Further, it is characterized in that the thin film transistor layer 100 includes a second substrate B2, the conductive layer structure is arranged on the second substrate B2, and the electrode opening 110 is arranged on the second substrate B2;

[0066] The conductive layer structure includes a first metal layer M1 disposed on the second substrate B2, and the first metal layer M1 is connected to the in-plane common electrode signal line COM1;

[0067] A second metal layer M2 disposed on the first metal layer M1;

[0068] A first conductive glass layer ITO1 is disposed on the second metal layer M2 , and the first conductive glass layer ITO1 is in contact with the conductor.

[0069] The second substrate B2 provides stable support and protection for the liquid crystal panel; the second substrate B2 may be a glass substrate.

[0070] It can be understood that the second substrate B2 is the bottom layer of the conductive layer structure, and therefore, the common electrode layer 200 is arranged below the TFT layer. Therefore, by setting the electrode opening 110 on the second substrate B2, the connection between the upper structure and the common electrode layer 200 can be achieved.

[0071] It can be understood that the first metal layer M1, the second metal layer M2 and the first conductive glass layer ITO1 are all layer structures with conductive capabilities;

[0072] It can be understood that in the original TFT layer preparation, it has a certain layer structure, such as the first metal layer M1 is used to prepare the gate of the TFT, the second metal layer M2 is used to prepare the source and drain of the TFT, and the first conductive glass layer ITO1 is used to prepare the common electrode of the TFT; therefore, in this embodiment, although the electrode opening 110 is made on the second side of the TFT, which belongs to an independent area relative to the in-plane, in order to facilitate the implementation of the solution, the conductive layer structure around the electrode opening 110 can be designed based on the existing layer structure; that is, the conductive layer structure described in this embodiment, although it has an independent layer similar to the in-plane, the role of the specific layer It is designed based on the common electrode signal input, which is inconsistent with the role and design principle of the corresponding layer in the in-plane TFT structure; taking the first metal layer M1, the second metal layer M2, and the first conductive glass layer ITO1 as examples, in this embodiment, the first conductive glass layer ITO1 is used to contact the conductive silver paste Ag, the first metal layer M1 is used to connect to the in-plane common electrode signal line COM1, and the second metal layer M2 transmits electrical signals between the first conductive glass layer ITO1 and the first metal layer M1; relative to the corresponding layer in the in-plane TFT structure, although the name is the same and the material used is the same, the role and setting method are obviously different. The same applies to other subsequent layers, which will not be repeated.

[0073] In this embodiment, by providing a conductive layer structure including a first metal layer M1 , a second metal layer M2 and a first conductive glass layer ITO1 , the transmission of the common electrode signal from the conductive silver paste Ag to the in-plane common electrode signal line COM1 is achieved.

[0074] Furthermore, the thin film transistor layer further includes an organic film layer disposed on the second metal layer M2;

[0075] The organic film layer is provided with a first opening O1 opposite to the electrode opening 110, and the first opening O1 is sloped toward the side of the electrode opening 110, and the first conductive glass layer ITO1 covers the side of the organic film layer from above the organic film layer and extends to the second substrate B2;

[0076] The organic film layer is provided with a second opening O2 , and the first conductive glass layer ITO1 is in contact with the second metal layer M2 through the second opening O2 .

[0077] The PFA (Polymer Film On Array, organic film) layer is used to achieve planarization and provide a flat surface for the upper structure.

[0078] The PFA layer is provided with a first opening O1 relative to the electrode opening 110, so that the electrode opening 110 can be connected to the colloid through hole of the sealant Seal body; after filling with the conductive silver paste Ag, the conductive silver paste Ag can contact the entire first opening O1 of the PFA layer and the part in contact with the colloid through hole; and the first conductive glass layer ITO1 needs to contact the conductive silver paste Ag to achieve the transmission of the common electrode signal, therefore, the first conductive glass is covered to the position relative to the conductive silver paste Ag of the PFA layer, thereby achieving the maximum contact area between the first conductive glass and the conductive silver paste Ag. At the same time, the side of the PFA layer facing the electrode opening 110 is prepared as a slope, which can also increase the contact area between the first conductive glass and the conductive silver paste Ag after covering.

[0079] It can be understood that the PFA layer is insulating, and the PFA layer is arranged on the second metal layer M2, and the first conductive glass is arranged on the PFA layer. Therefore, the first conductive glass and the second metal layer M2 cannot be electrically connected through the PFA layer. Therefore, it is necessary to set a second opening O2 on the PFA layer so that the first conductive glass can directly contact the second metal layer M2 through the second opening O2 to achieve electrical conduction.

[0080] Furthermore, the conductive layer structure further includes a second insulating layer Pass2 disposed between the first conductive glass layer ITO1 and the organic film layer; the second insulating layer Pass2 is provided with a third opening O3 relative to the electrode opening 110, and the third opening O3 has a smaller aperture than the first opening O1; the second insulating layer Pass2 is disconnected at the side of the organic film layer, and the first conductive glass layer ITO1 forms a groove A1 between the second insulating layer Pass2 and the side of the organic film layer;

[0081] The second insulating layer Pass2 is opened at the second opening O2 of the organic film layer to form Pass2+PFAH.

[0082] The second insulating layer Pass2 is used to achieve insulation between different conductive layers. In this embodiment, the second insulating layer Pass2 is provided with a third opening O3 relative to the electrode opening 110, so that the electrode opening 110 can be connected with the colloid through hole of the sealant Seal. At the same time, the aperture of the third opening O3 is smaller than the first opening O1, so that the second insulating layer Pass2 will exist at a position closer to the electrode opening 110, and there will be no PFA layer. At the same time, the second insulating layer Pass2 is disconnected at the PFA side, so that there is only the PFA layer at the disconnected position without the second insulating layer Pass2. The second insulating layer Pass2 is arranged between the first conductive glass layer ITO1 and the PFA layer. When the first conductive glass layer ITO1 is prepared, the first conductive glass layer ITO1 will simultaneously cover the second conductive glass layer ITO1. The second insulating layer Pass2 and the PFA layer; thereby, the first conductive glass layer ITO1 on the second insulating layer Pass2 near the electrode opening 110 is higher, while the first conductive glass layer ITO1 on the position where the second insulating layer Pass2 is disconnected is lower, and the first conductive glass layer ITO1 on the side of the PFA layer gradually rises, so that the first conductive glass layer ITO1 forms a groove between the second insulating layer Pass2 and the side of the organic film layer; the presence of the groove further increases the contact area between the first conductive glass layer ITO1 and the conductive silver paste Ag; at the same time, the first conductive glass layer ITO1 is prone to cracks when covering the side of the PFA layer, and by setting the groove structure, the stability of the first conductive glass layer ITO1 can be improved to avoid the occurrence of cracks.

[0083] It can be understood that the second insulating layer Pass2 is insulating, and the second insulating layer Pass2 is arranged on the second metal layer M2, and the first conductive glass is arranged on the second insulating layer Pass2. Therefore, the first conductive glass and the second metal layer M2 cannot be electrically connected through the second insulating layer Pass2. Therefore, it is necessary to set an opening on the second insulating layer Pass2 so that the first conductive glass can directly contact the second metal layer M2 through the second opening O2 to achieve electrical conduction.

[0084] Furthermore, the conductive layer structure further includes a second conductive glass layer ITO2 disposed between the second insulating layer Pass2 and the organic film layer;

[0085] The second conductive glass layer ITO2 covers the side of the organic film layer from above the organic film layer;

[0086] Between the first opening O1 and the second opening O2 of the organic film layer, a fourth opening O4 is provided in the contact section of the first conductive glass layer ITO1 with the sealant Seal, and the second insulating layer Pass2 is in contact with the sealant Seal through the fourth opening O4;

[0087] The second insulating layer Pass2 is provided with a fifth opening O5 between the fourth opening O4 and the second opening O2;

[0088] The first conductive glass layer ITO1 contacts the second conductive glass layer ITO2 through the fifth opening O5.

[0089] It can be understood that the first conductive glass layer ITO1 is the top layer of the TFT layer, and therefore, the sealant Seal will adhere to the first conductive glass layer ITO1; and due to material properties, the adhesion between the second insulating layer Pass2 and the sealant Seal is better than that between the first conductive glass layer ITO1, and therefore, in this embodiment, relevant settings are used to make the second insulating layer Pass2 and the sealant Seal adhere to each other, thereby improving airtightness.

[0090] Specifically, a fourth opening O4 is provided on the contact portion of the first conductive glass layer ITO1 with the sealant Seal. Since the second insulating layer Pass2 is located below the first conductive glass, the second insulating layer Pass2 can contact with the sealant Seal through the fourth opening O4, thereby improving airtightness.

[0091] However, the projection of the fourth opening O4 is set between the first opening O1 and the second opening O2 of the PFA layer. Therefore, the first conductive glass cannot establish an electrical connection between the conductive silver paste Ag and the second metal layer M2 due to the disconnection of the fourth opening O4. Therefore, in this embodiment, a fifth opening O5 is set in the PFA layer to form Pass2H, and a second conductive glass is set; the coverage of the second conductive glass extends from above the PFA layer to the side of the PFA layer; it should be noted that when the second conductive glass covers the PFA layer, it needs to cover the position below the fifth opening O5; at this time, due to the second insulating layer Pass 2 is disconnected at the side of the PFA layer, so the first conductive glass and the second conductive glass can contact at the side of the PFA layer, and at the same time, because the fifth opening O5 of the second insulating layer Pass2 is set between the fourth opening O4 and the second opening O2, the first conductive glass and the second conductive glass can contact at the fifth opening O5; therefore, the common electrode signal output by the conductive silver paste Ag can sequentially pass through the first conductive glass, the second conductive glass on the side of the PFA layer, and the second conductive glass of the fifth opening O5 to reach the second metal layer M2; while achieving improved airtightness, the transmission path of the common electrode signal is guaranteed.

[0092] Furthermore, the conductive layer structure further includes a gate insulating layer disposed between the first metal layer M1 and the second metal layer M2; wherein:

[0093] The gate insulating layer is provided with a sixth opening O6 at a position where the gate insulating layer contacts the first metal layer M1 and the second metal layer M2 . The first metal layer M1 contacts the second metal layer M2 through the sixth opening O6 .

[0094] The GI (Gate Insulator) layer is arranged on the first metal layer M1, and the gate insulating layer is insulated, so no electrical connection can be established between the first metal layer M1 and the second metal layer M2; therefore, in this embodiment, a sixth opening O6 is set on the gate insulating layer to form a GIH, and the sixth opening O6 is positioned to contact the first metal layer M1 and the second metal layer M2 at the same time, so that the first metal layer M1 and the second metal layer M2 can be electrically connected through the sixth opening O6.

[0095] Furthermore, the conductive layer structure further includes a first insulating layer Pass1 disposed on the gate insulating layer and the second metal layer M2 and below the organic film layer; the first insulating layer Pass1 opens at the second opening O2 of the organic film layer.

[0096] By setting the first insulating layer Pass1 to wrap the layer structure thereunder, the airtightness can be further improved; however, since the first insulating layer Pass1 is an insulating layer, after the first insulating layer Pass1 is set, the second metal layer M2 and the first conductive glass layer ITO1 cannot be electrically connected due to the existence of the first insulating layer Pass1; therefore, in this embodiment, an opening is made at a position of the first insulating layer Pass1 relative to the second opening O2, so that the first conductive glass layer ITO1 and the second metal layer M2 can be in contact.

[0097] See also Figure 5 ,based on Figure 5 The preparation process of the TFT layer in this application is described as follows:

[0098] It should be noted that this embodiment is described by taking 8 masks and 2 dry etching processes as an example. In practical applications, a specific preparation process can also be set based on actual needs.

[0099] 1. Prepare a second substrate B2, and prepare a first metal layer M1 on the second substrate B2 based on the mask;

[0100] 2. Prepare a gate insulating layer based on a mask to avoid the electrode opening 110, and open the hole through a dry process;

[0101] 3. Prepare a second metal layer M2 based on the mask;

[0102] 4. Prepare the first insulating layer Pass1;

[0103] 5. Prepare a PFA layer based on the mask to avoid the electrode opening 110 and the second opening O2;

[0104] 6. Prepare the second conductive glass layer ITO2 based on the mask to avoid the electrode opening 110;

[0105] 7. Prepare the second insulating layer Pass2 based on the mask to avoid the electrode opening 110, and open holes from the second insulating layer Pass2 to the first insulating layer Pass1 through a dry process;

[0106] 8. Prepare the first conductive glass layer ITO1 by avoiding the electrode opening 110 and the fourth opening O4 based on the mask.

[0107] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or system. In the absence of further restrictions, an element defined by the sentence "includes a..." does not exclude the presence of other identical elements in the process, method, article or system including the element. The serial numbers of the above-mentioned embodiments of the present invention are for description only and do not represent the advantages and disadvantages of the embodiments.

[0108] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A display panel, characterized in that: The display panel includes a thin film transistor layer, a common electrode layer and an in-plane common electrode signal line; the first side of the thin film transistor layer connects the common electrode layer to the in-plane common electrode signal line through a common electrode terminal; the second side of the thin film transistor layer is provided with an electrode opening and a conductive layer structure, wherein the second side is arranged opposite to the first side; the electrode opening is filled with a conductor, and the conductor is respectively connected to the conductive layer structure and the common electrode layer; the conductive layer structure is also connected to the in-plane common electrode signal line.

2. The display panel according to claim 1, wherein: The display panel further includes a filter layer and a sealant; wherein: The filter layer is arranged opposite to the thin film transistor layer, and the sealant is arranged between the side edge of the filter layer and the side edge of the thin film transistor layer; A colloid through hole is arranged in the area of ​​the sealant opposite to the electrode opening, the conductor is filled in the colloid through hole, and overflows through the electrode opening to connect with the common electrode layer.

3. The display panel according to claim 2, wherein: The filter layer includes an organic flat layer; A light shielding layer disposed on the organic flat surface; A first substrate disposed on the light shielding layer; A polarizing layer is disposed on the first substrate.

4. The display panel according to any one of claims 1 to 3, wherein: The thin film transistor layer includes a second substrate, the conductive layer structure is arranged on the second substrate, and the electrode opening is arranged on the second substrate; The conductive layer structure includes a first metal layer disposed on the second substrate, the first metal layer being connected to the in-plane common electrode signal line; a second metal layer disposed on the first metal layer; A first conductive glass layer is disposed on the second metal layer, and the first conductive glass layer is in contact with the conductor.

5. The display panel according to claim 4, wherein: The thin film transistor layer further includes an organic film layer disposed on the second metal layer; The organic film layer is provided with a first opening opposite to the electrode opening, and the first opening is sloped on a side facing the electrode opening, and the first conductive glass layer covers the side of the organic film layer from above the organic film layer and extends to the second substrate; The organic film layer is provided with a second opening, and the first conductive glass layer is in contact with the second metal layer through the second opening.

6. The display panel according to claim 5, characterized in that: The conductive layer structure further includes a second insulating layer disposed between the first conductive glass layer and the organic film layer; the second insulating layer is provided with a third opening relative to the electrode opening, and the third opening is smaller than the aperture of the first opening; the second insulating layer is disconnected at the side of the organic film layer, and the first conductive glass layer forms a groove between the second insulating layer and the side of the organic film layer; The second insulating layer opens at the second opening of the organic film layer.

7. The display panel according to claim 6, wherein: The conductive layer structure further includes a second conductive glass layer disposed between the second insulating layer and the organic film layer; The second conductive glass layer covers the side of the organic film layer from above the organic film layer; Between the first opening and the second opening of the organic film layer, a fourth opening is provided in the contact section of the first conductive glass layer with the sealant, and the second insulating layer is in contact with the sealant through the fourth opening; The second insulating layer is provided with a fifth opening between the fourth opening and the second opening; The first conductive glass layer contacts the second conductive glass layer through the fifth opening.

8. The display panel according to claim 5, wherein: The conductive layer structure further includes a gate insulating layer disposed between the first metal layer and the second metal layer; wherein: The gate insulating layer is provided with a sixth opening at a position where the gate insulating layer contacts the first metal layer and the second metal layer at the same time, and the first metal layer contacts the second metal layer through the sixth opening.

9. The display panel according to claim 8, wherein: The conductive layer structure further includes a first insulating layer disposed on the gate insulating layer and the second metal layer and below the organic film layer; the first insulating layer opens at the second opening of the organic film layer.

10. The display panel according to claim 1, wherein: The conductor is conductive silver paste.

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