Current source gate driving device, method and equipment of semiconductor switching device

Abstract

The invention relates to a current source grid driving device, method and equipment of a semiconductor switching device. The device comprises a control module, a current and voltage detection module, a logic judgment module, an auxiliary control module and a current source driving module. The device can accurately detect the turn-on or turn-off state of the semiconductor switching device through the current and voltage detection module. Using a logic determination module to randomly adjust the start and stop time of triggering a turn-on current square wave or turn-off current square wave by an auxiliary control module according to a first reference voltage and a second reference voltage of voltage reference data and to adjust the output of the auxiliary control module according to a third reference voltage and a fourth reference voltage of the voltage reference data The current amplitude in the turn-on current square wave or the turn-off current square wave is calculated according to the current amplitude of the turn-on current square wave or the turn-off current square wave, so that the control current output by the current source driving module has a very high control freedom degree, and the switching loss of the semiconductor switching device can be reduced as much as possible while current and voltage oscillation in the semiconductor switching device can be easily suppressed.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor components, and in particular to a current source gate driving device, method and equipment for a semiconductor switching device. Background Art

[0002] Silicon carbide metal oxide semiconductor field effect transistor (SiC MOSFET) has excellent low loss, high switching speed, high temperature resistance and other characteristics. This type of semiconductor switching device has brought opportunities for improving the power density and efficiency of power electronic devices such as power converters and motor drivers. In power electronic devices, the performance of semiconductor switching devices is closely related to the gate drive circuit. In addition to providing the energy for turning on and off to the switching device based on the control signal, the gate drive circuit also has functions such as electrical isolation and device protection. An excellent gate drive circuit can give full play to the potential of silicon carbide switching devices and effectively improve the efficiency and reliability of power electronic devices.

[0003] According to the different objects controlled by the gate drive circuit, it can be roughly divided into voltage source gate drive and current source gate drive. For traditional voltage source drive, the voltage source is connected to the input capacitance C of the switching device through the gate resistor. iss Charging and discharging are performed to enable the semiconductor switching device to be turned on and off. In order to balance the switching loss and current and voltage overshoot, it is necessary to select a suitable gate resistor for the voltage source drive. Compared with the voltage source drive, the current source drive can maintain a relatively constant gate current during the switching process, which can significantly increase the switching speed and reduce the switching loss. However, due to the presence of parasitic capacitance and stray inductance, excessive voltage change rate dv / dt and current change rate di / dt can cause serious overshoot, oscillation and electromagnetic interference problems, posing great challenges to the safe operation and system design of semiconductor switching devices. Active current source gate drive can actively change the gate current to optimize the switching behavior of semiconductor switching devices, which can significantly improve the inherent defects of conventional current source drive.

[0004] The existing active current source gate drive circuit is mostly composed of current source drive, turn-on and turn-off auxiliary circuit and switch state detection circuit. The switch state detection circuit collects the current change rate di / dt and voltage change rate dv / dt of the semiconductor switch device, and then compares it with the reference voltage through a comparator. Based on the output of the detection circuit, the auxiliary circuit is controlled to actively control the gate current. However, it can be seen from the actual situation that the semiconductor switch device will have current overshoot and oscillation during the turn-on process, and voltage overshoot and oscillation during the turn-off process, which will inevitably lead to oscillation of the current change rate di / dt and voltage change rate dv / dt signals. If the reference voltage is set low, the detection circuit may mistakenly trigger the auxiliary circuit due to oscillation. If the reference voltage is set high, although the auxiliary circuit can be avoided from being accidentally touched, the effect of active drive will be greatly reduced. The oscillation of current and voltage will be coupled into the gate drive circuit through the detection circuit, which will make the output of the gate drive extremely unstable and seriously affect its driving effect. Summary of the invention

[0005] The present application provides a current source gate drive device, method and equipment for a semiconductor switching device, which is used to solve the technical problem that the output of the gate drive is extremely unstable due to the oscillation of current and voltage during the operation of the existing current source gate source driven semiconductor switching device, thereby affecting its driving effect.

[0006] In order to achieve the above objectives, this application provides the following technical solutions:

[0007] In one aspect, a current source gate driving device of a semiconductor switch device is provided, comprising:

[0008] A control module, used for providing PWM switching signals and voltage reference data;

[0009] A current and voltage detection module, connected to the semiconductor switch device, the current and voltage detection module is used to collect current data and voltage data output by the semiconductor switch device and convert the current data and the voltage data into corresponding first voltage signals and second voltage signals;

[0010] A logic judgment module, used to be connected to the current and voltage detection module and the control module, and the logic judgment module is used to compare the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, and to make a non-logical judgment to generate a turn-on voltage square wave and a turn-off voltage square wave;

[0011] an auxiliary control module, used for connecting with the logic judgment module and the control module, and used for generating a corresponding on-current square wave or off-current square wave according to the voltage reference data, the on-voltage square wave or the off-voltage square wave;

[0012] A current source driving module is used to be connected to the auxiliary control module, the control module and the semiconductor switching device; the current source driving module is used to output a constant driving current according to the PWM switching signal, and to adjust the driving current to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and to accurately control the operation of the semiconductor switching device through the control current.

[0013] Preferably, the current and voltage detection module includes a voltage detection conversion submodule and a current detection conversion submodule;

[0014] The voltage detection conversion submodule is used to collect the voltage data output by the semiconductor switch device and convert the voltage data into a second voltage signal within a set voltage range by using a voltage division method;

[0015] The current detection conversion submodule is used to collect the current data output by the semiconductor switch device, and perform active integration and amplification processing on the current data to obtain a first voltage signal within a set voltage range.

[0016] Preferably, the logic judgment module includes a comparison submodule and a logic judgment submodule;

[0017] The comparison submodule is used to compare the first voltage signal with the first reference voltage of the voltage reference data and output first level data; compare the second voltage signal with the second reference voltage of the voltage reference data and output second level data;

[0018] The logic judgment submodule is used to perform AND calculation on the first level data and the second level data to obtain third level data; directly perform AND logic processing on the third level data and the PWM switch signal to output a turn-on voltage square wave; or perform non-logical processing on the PWM switch signal and then perform AND logic processing on the third level data to output a turn-off voltage square wave.

[0019] Preferably, the auxiliary control module includes an opening auxiliary submodule and a closing auxiliary submodule;

[0020] The turn-on auxiliary submodule is used to process the input turn-on voltage square wave according to the third reference voltage of the voltage reference data and the DC power supply to generate a turn-on current square wave;

[0021] The shutdown auxiliary submodule is used to process the input shutdown current square wave according to the fourth reference voltage of the voltage reference data and the direct current power supply to generate a shutdown current square wave.

[0022] Preferably, the opening auxiliary submodule includes a first switch tube, a third switch tube, a fourth switch tube, a fifth switch tube, a third operational amplifier, a tenth resistor, an eleventh resistor and a twelfth resistor, the first end of the first switch tube is connected to the logic judgment module, the third end of the first switch tube is connected to the third end of the third switch tube, the second end of the third switch tube is connected to the current source driving module as the output end of the opening auxiliary submodule, the first end of the third switch tube is connected to the first end of the fourth switch tube, the third end of the fourth switch tube and the second end of the first switch tube are both grounded, the second end of the fourth switch tube is connected to the second end of the fifth switch tube, the third end of the fifth switch tube is connected in series with the twelfth resistor and connected to the DC power supply, the first end of the fifth switch tube is connected to the output end of the third operational amplifier, the positive input end of the third operational amplifier is connected to the control module, the negative input end of the third operational amplifier is connected in series with the tenth resistor and grounded, and the negative input end of the third operational amplifier and its output end are connected in parallel with the eleventh resistor.

[0023] Preferably, the shutdown auxiliary submodule includes a second switch tube, a sixth switch tube, a seventh switch tube, an eighth switch tube, a fourth operational amplifier, a fourteenth resistor, a fifteenth resistor and a sixteenth resistor, the first end of the second switch tube is connected to the logic judgment module, the third end of the second switch tube is connected to the third end of the sixth switch tube through the sixteenth resistor, the first end of the sixth switch tube is connected to the output end of the fourth operational amplifier, the positive input end of the fourth operational amplifier is connected to the control module, the negative input end of the fourth operational amplifier is connected in series with the fourteenth resistor and grounded, the negative input end of the fourth operational amplifier and its output end are connected in parallel with the fifteenth resistor, the second end of the sixth switch tube is respectively connected to the second end of the eighth switch tube, the first end of the eighth switch tube and the first end of the seventh switch tube, the first end of the seventh switch tube is connected to the first end of the eighth switch tube, the third end of the seventh switch tube and the third end of the eighth switch tube are both connected to the DC power supply, and the second end of the seventh switch tube is connected to the current source driving module as the output end of the shutdown auxiliary submodule.

[0024] Preferably, the current source driving module includes a current source, an off-switch element, an on-switch element, an off-resistance and an on-resistance, the third end of the off-switch element is connected in parallel with the third end of the on-switch element and then connected to the first end of the current source; the second end of the off-switch element is connected in parallel with the second end of the on-switch element and then connected to the output end of the auxiliary control module and the connection node is used as the output end of the current source driving module, and the output end of the current source driving module is connected to the first end of the semiconductor switching device; the first end of the off-switch element, the first end of the on-switch element and the second end of the current source are all connected to the second end of the semiconductor switching device, the off-resistance is connected in series between the first end of the off-switch element and the second end of the semiconductor switching device, and the on-resistance is connected in series between the first end of the on-switch element and the second end of the semiconductor switching device.

[0025] On the other hand, a current source gate driving method of a semiconductor switch device is provided, which is applied to the current source gate driving device of the semiconductor switch device described above, and the current source gate driving method comprises the following steps:

[0026] Acquire PWM switch signals, voltage reference data, and current data and voltage data output by semiconductor switch devices;

[0027] Converting the current data and the voltage data to obtain corresponding first voltage signals and second voltage signals;

[0028] According to the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, a comparison is performed and a non-AND logic judgment is performed to obtain a turn-on voltage square wave and a turn-off voltage square wave;

[0029] Performing conversion processing according to the voltage reference data, the turn-on voltage square wave or the turn-off voltage square wave to obtain a corresponding turn-on current square wave or turn-off current square wave;

[0030] A driving current is obtained, and the driving current is adjusted to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and the operation of the semiconductor switch device is accurately controlled by the control current.

[0031] Preferably, obtaining a turn-on voltage square wave and a turn-off voltage square wave by comparing the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, and performing a non-AND logic judgment process comprises:

[0032] Compare the first voltage signal with a first reference voltage of the voltage reference data and output first level data; compare the second voltage signal with a second reference voltage of the voltage reference data and output second level data;

[0033] Performing AND calculation on the first level data and the second level data to obtain third level data;

[0034] The third level data is directly processed with the PWM switch signal by AND logic to output a turn-on voltage square wave; or the PWM switch signal is processed with the third level data by AND logic after non-logic processing to output a turn-off voltage square wave.

[0035] In another aspect, a terminal device is provided, comprising a processor and a memory;

[0036] The memory is used to store program codes and transmit the program codes to the processor;

[0037] The processor is used to execute the current source gate driving method of the semiconductor switch device according to the instructions in the program code.

[0038] The current source gate driving device, method and equipment of the semiconductor switching device, the current source gate driving device of the semiconductor switching device includes a control module, which is used to provide a PWM switching signal and a voltage reference data; a current and voltage detection module, which is connected to the semiconductor switching device, and the current and voltage detection module is used to collect the current data and voltage data output by the semiconductor switching device and convert the current data and voltage data into corresponding first voltage signals and second voltage signals; a logic judgment module, which is used to connect to the current and voltage detection module and the control module, and the logic judgment module is used to judge according to the PWM switching signal, the voltage reference data, the first voltage signal and the second voltage signal The auxiliary control module is used to connect with the logic judgment module and the control module, and the auxiliary control module is used to generate the corresponding turn-on current square wave or turn-off current square wave according to the voltage reference data, the turn-on voltage square wave or the turn-off voltage square wave; the current source driving module is used to connect with the auxiliary control module, the control module and the semiconductor switching device; the current source driving module is used to output a constant driving current according to the PWM switching signal, and adjust the driving current to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and accurately control the operation of the semiconductor switching device by controlling the current.

[0039] It can be seen from the above technical scheme that the present application has the following advantages: the current source gate drive device of the semiconductor switching device can accurately detect the on or off state of the semiconductor switching device through the current and voltage detection module, and the logic judgment module can arbitrarily adjust the start and stop time of the auxiliary control module triggering the on current square wave or the off current square wave according to the first reference voltage and the second reference voltage of the voltage reference data, and can adjust the current amplitude in the on current square wave or the off current square wave output by the auxiliary control module according to the third reference voltage and the fourth reference voltage of the voltage reference data, so that the control current output by the current source drive module has a high degree of control freedom, and can easily suppress the current and voltage oscillations in the semiconductor switching device while reducing its switching loss as much as possible; it solves the technical problem that the output of the gate drive of the existing current source gate source driven semiconductor switching device is extremely unstable due to the oscillation of current and voltage, thereby affecting its driving effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0041] Figure 1 A schematic diagram of a framework of a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0042] Figure 2 A circuit diagram of a semiconductor switch device in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0043] Figure 3 A circuit diagram of a current and voltage detection module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0044] Figure 4 A circuit diagram of a logic judgment module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0045] Figure 5 A circuit diagram of an auxiliary control module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0046] Figure 6 A circuit diagram of a current source driving module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0047] Figure 7 A schematic diagram of a turn-on waveform of a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0048] Figure 8 A schematic diagram of a turn-off waveform of a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0049] Fig. 9 A schematic diagram of a simulation waveform of a current and voltage detection module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0050] Fig.10 A schematic diagram of a simulation of a square wave of a turn-on voltage of a logic judgment module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0051] Fig.11 A schematic diagram of a turn-off voltage square wave simulation of a logic judgment module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application;

[0052] Fig.12 The figure is a comparison of the turn-on waveform and gate current waveform of two different gate drives;

[0053] Fig.13 The figure is a comparison of the turn-off waveform and gate current waveform of two different gate drives;

[0054] Fig.14 A flowchart of the steps of the current source gate driving method of the semiconductor switch device according to the embodiment of the present application;

[0055] Fig.15 A schematic diagram of a terminal device described in an embodiment of the present application. DETAILED DESCRIPTION

[0056] In order to make the purpose, features, and advantages of the invention of this application more obvious and easy to understand, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the embodiments described below are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0057] In the description of the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0058] In the embodiments of the present application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0059] The embodiments of the present application provide a current source gate drive device, method and equipment for a semiconductor switching device, which accurately controls the control current (such as gate current) of the semiconductor switching device at the switching moment and provides a stable drive current, so as to give full play to the potential of switching devices such as SiC, and solve the technical problem that the output of the gate drive of the existing current source gate source driven semiconductor switching device is extremely unstable due to the oscillation of current and voltage, thereby affecting its driving effect.

[0060] Embodiment 1:

[0061] Figure 1 A schematic diagram of the framework of a current source gate driving device of a semiconductor switching device described in an embodiment of the present application.

[0062] like Figure 1 As shown, an embodiment of the present application provides a current source gate driving device of a semiconductor switching device, including a control module 10, a current and voltage detection module 20, a logic judgment module 30, an auxiliary control module 40 and a current source driving module 50, the input end of the current and voltage detection module 20 is connected to the semiconductor switching device 101, the output end of the current and voltage detection module 20 is connected to the input end of the logic judgment module 30, the output end of the logic judgment module 30 is connected to the input end of the auxiliary control module 40, the output end of the auxiliary control module 40 is connected to the input end of the current source driving module 50, the output end of the current source driving module 50 is connected to the first end of the semiconductor switching device 101, and the control module 10 is respectively connected to the logic judgment module 30, the auxiliary control module 40 and the current source driving module 50.

[0063] It should be noted that the semiconductor switch device 101 can be a switch device such as a SiC MOSFET tube. The first end of the semiconductor switch device 101 is the gate of the SiC MOSFET tube, the second end of the semiconductor switch device 101 is the source of the SiC MOSFET tube, and the third end of the semiconductor switch device 101 is the drain of the SiC MOSFET tube.

[0064] In the embodiment of the present application, the control module 10 is used to provide a PWM switch signal and voltage reference data.

[0065] It should be noted that the control module 10 may be a digital controller. In this embodiment, the voltage reference data includes a first reference voltage V ref1 , the second reference voltage V ref2 , the third reference voltage V ref3 and the fourth reference voltage V ref4 .

[0066] In the embodiment of the present application, the current and voltage detection module 20 is used to collect current data and voltage data output by the semiconductor switch device 101 and convert the current data and voltage data into corresponding first voltage signals and second voltage signals.

[0067] It should be noted that the current and voltage detection module 20 collects the current data I output from the second terminal and the third terminal of the semiconductor switch device 101. DS And voltage data V DS ; The second is to collect the current data I DS And voltage data V DS The first voltage signal V converted into a small voltage signal I_DS and the second voltage signal V V_DS The current and voltage detection module 20 also converts the first voltage signal V I_DS and the second voltage signal V V_DS The result is transmitted to the logic judgment module 30 .

[0068] In the embodiment of the present application, the logic judgment module 30 is used to determine the voltage according to the PWM switch signal, the voltage reference data, the first voltage signal V I_DS and the second voltage signal V V_DS Comparison and non-AND logic judgment are performed to generate a turn-on voltage square wave on and a turn-off voltage square wave off.

[0069] It should be noted that the logic judgment module 30 receives the V from the detection circuit from the current and voltage detection module 20. I_DS and V V_DS and a first reference voltage V from the control module 10 ref1 , the second reference voltage V ref2After comparison and logical judgment with the PWM switching signal, a turn-on voltage square wave on and a turn-off voltage square wave off are generated.

[0070] In the embodiment of the present application, the auxiliary control module 40 is used to generate a corresponding turn-on current square wave I according to the voltage reference data, the turn-on voltage square wave on or the turn-off voltage square wave off. sink Or turn off the current square wave I source .

[0071] It should be noted that the auxiliary control module 40 receives the on voltage square wave on and the off voltage square wave off from the logic judgment module 30 and the third reference voltage V ref3 , the fourth reference voltage V ref4 , generating the corresponding turn-on current square wave I sink and the shutdown current square wave I source , actively adjust the current amplitude of the control current output by the current source in the switching stage of the semiconductor switching device 101.

[0072] In the embodiment of the present application, the current source driving module 50 is used to output a constant driving current I according to the PWM switching signal. G , and according to the turn-on current square wave I sink Or turn off the current square wave I source Adjust the drive current to a control current I with adjustable amplitude GA and by controlling the current I GA The operation of the semiconductor switching device 101 is accurately controlled.

[0073] It should be noted that the current source driving module 50 generates a driving current I G At the same time, the auxiliary control module 40 generates a turn-on current square wave I sink Or turn off the current square wave I source , which can generate a control current I with controllable amplitude GA In this embodiment, the current source driving module 50 generates a constant driving current I G , using the turn-on current square wave I generated by the auxiliary control module 40 sink Or turn off the current square wave I source , for the driving current I G Adjust the control current I GA , control current I GA It is not a constant value but is determined by the driving current I G , turn on the current square wave I sink Or turn off the current square wave I source The current data is jointly determined. Therefore, the square wave current I sink Or turn off the current square wave Isource The current data is used to control the current I GA Make adjustments.

[0074] In the embodiment of the present application, the current source gate driving device of the semiconductor switch device can accurately detect the on or off state of the semiconductor switch device 101 through the current voltage detection module 20, and the logic judgment module 30 is used according to the first reference voltage V ref1 and the second reference voltage V ref2 The auxiliary control module 40 can be adjusted to trigger the opening current square wave I sink Or turn off the current square wave I source In addition, the third reference voltage V ref3 and the fourth reference voltage V ref4 The auxiliary control module 40 can be adjusted to output the turn-on current square wave I sink Or turn off the current square wave I source Therefore, the control current I output by the current source driving module 50 is GA With a high degree of control freedom, it is easy to suppress the current and voltage oscillations in the semiconductor switch device 101 while reducing its switching loss as much as possible.

[0075] In the embodiment of the present application, the structure and control of the current source driving module 50 used in the current source gate driving device of the semiconductor switch device are relatively simple, and can generate a relatively constant driving current I G , and then the control current I of the semiconductor switch device 101 can be controlled by the auxiliary control module 40 GA The current data I can be accurately adjusted by the current and voltage detection module 20 DS And voltage data V DS The first voltage signal V converted into a small voltage signal I_DS and the second voltage signal V V_DS , then the logic judgment module 30 can accurately trigger the auxiliary control module 40 during the switching phase of the semiconductor switch device 101, so that the semiconductor switch device 101 is not affected by voltage and current oscillations; through the voltage reference data set by the control module, the working time and output current amplitude of the auxiliary control module 40 can be freely controlled, and the control current I GA Accurate control.

[0076] It should be noted that the current source gate drive device of the semiconductor switch device has the function of controlling the current I GAThe ability to accurately control the switching state of the semiconductor switching device 101 can be actively adjusted, thereby optimizing the switching behavior of the semiconductor switching device 101, while reducing switching losses and effectively suppressing overshoot and oscillation of voltage and current in the semiconductor switching device 101.

[0077] The present application provides a current source gate drive device for a semiconductor switch device, comprising a control module for providing a PWM switch signal and voltage reference data; a current and voltage detection module connected to the semiconductor switch device, the current and voltage detection module for collecting current data and voltage data output by the semiconductor switch device and converting the current data and voltage data into corresponding first voltage signals and second voltage signals; a logic judgment module for connecting to the current and voltage detection module and the control module, the logic judgment module for comparing and performing AND and NOT logic judgment on a turn-on voltage square wave and a turn-off voltage square wave according to a PWM switch signal, voltage reference data, a first voltage signal and a second voltage signal; an auxiliary control module for connecting to the logic judgment module and the control module, the auxiliary control module for generating a corresponding turn-on current square wave or a turn-off current square wave according to voltage reference data, a turn-on voltage square wave or a turn-off voltage square wave; a current source drive module for connecting to the auxiliary control module, the control module and the semiconductor switch device; the current source drive module for outputting a constant drive current according to the PWM switch signal, and adjusting the drive current to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and accurately controlling the operation of the semiconductor switch device by controlling the current. The current source gate drive device of the semiconductor switch device can accurately detect the on or off state of the semiconductor switch device through the current and voltage detection module, and adopts the logic judgment module to arbitrarily adjust the start and stop time of the auxiliary control module triggering the on current square wave or the off current square wave according to the first reference voltage and the second reference voltage of the voltage reference data, and can adjust the current amplitude in the on current square wave or the off current square wave output by the auxiliary control module according to the third reference voltage and the fourth reference voltage of the voltage reference data, so that the control current output by the current source drive module has a high degree of control freedom, and can easily suppress the current and voltage oscillation in the semiconductor switch device while reducing its switching loss as much as possible; it solves the technical problem that the operation of the existing semiconductor switch device driven by the current source gate source is extremely unstable due to the oscillation of current and voltage, thereby affecting its driving effect.

[0078] Figure 2 This is a circuit diagram of a semiconductor switch device in a current source gate driving device of a semiconductor switch device described in an embodiment of the present application.

[0079] like Figure 2 As shown, in one embodiment of the present application, a first switch capacitor C is connected between the first end and the second end of the semiconductor switch device 101.GS A second switch capacitor C is connected between the first terminal and the third terminal of the semiconductor switch device 101. GD A third switch capacitor C is connected between the second end and the third end of the semiconductor switch device 101. DS The second end of the semiconductor switch device 101 is also connected to a first inductor L sS The third terminal of the semiconductor switch device 101 is also connected to a diode D h , the fourth switch capacitor C J and the second inductor L load , diode D h , the fourth switch capacitor C J and the second inductor L load After being connected in parallel, it is also connected with the third inductor L loop connect.

[0080] It should be noted that the first inductor L sS It is used to complete the conversion from current to voltage. In other embodiments, the inductor L sS It can also be replaced by a Rogowski coil to achieve the same function.

[0081] Figure 3 This is a circuit diagram of a current and voltage detection module in a current source gate driving device of a semiconductor switch device described in an embodiment of the present application.

[0082] like Figure 3 As shown, in one embodiment of the present application, the current and voltage detection module 20 includes a voltage detection conversion submodule 21 and a current detection conversion submodule 22;

[0083] The voltage detection conversion submodule 21 is used to collect the voltage data output by the semiconductor switch device 101 and convert the voltage data into a second voltage signal within a set voltage range by using a voltage division method;

[0084] The current detection conversion submodule 22 is used to collect the current data output by the semiconductor switch device 101, and perform active integration and amplification processing on the current data to obtain a first voltage signal within a set voltage range.

[0085] It should be noted that if Figure 3As shown, the voltage detection conversion submodule 21 includes a voltage divider circuit. The current detection conversion submodule 22 includes an integration circuit and an amplifier circuit connected to the integration circuit. The voltage divider circuit includes a seventh resistor R7 and an eighth resistor R8 connected in parallel, and the seventh resistor R7 is connected to the third end of the semiconductor switch device 101. The integration circuit includes a first operational amplifier element OP1, a first resistor R1, a second resistor R2, a third resistor R3 and a first capacitor C1; the amplifier circuit includes a second operational amplifier element OP2, a fifth resistor R5 and a sixth resistor R6. The first resistor R1 is connected to the second end of the semiconductor switch device 101, the first resistor R1 and the third resistor R3 are connected in series to the negative input end of the first operational amplifier element OP1, the positive input end of the first operational amplifier element OP1 is connected in series with the resistor R01 to ground, the negative input end of the first operational amplifier element OP1 and the output end of the first operational amplifier element OP1 are connected in parallel with the first capacitor C1, the output end of the first operational amplifier element OP1 and the positive input end of the second operational amplifier element OP2 are connected with the fifth resistor R5, and the negative input end of the second operational amplifier element OP2 and the output end of the second operational amplifier element OP2 are connected in parallel with the sixth resistor R6. In this embodiment, the first operational amplifier element OP1 and the second operational amplifier element OP2 can both be operational amplifiers.

[0086] In the embodiment of the present application, the input end of the voltage detection conversion submodule 21 is connected to the third end (such as the drain D) of the semiconductor switch device. The voltage detection conversion submodule 21 can convert the voltage data V DS Adjust to a suitable setting voltage range (such as 0V~5V), and the second voltage signal V output by the voltage divider circuit V_DS Will be with the voltage data V DS A strict linear relationship.

[0087] It should be noted that the voltage detection conversion submodule 21 uses the first conversion formula to convert the voltage data V DS Converted into a second voltage signal V V_DS , the first conversion formula is:

[0088]

[0089] In the formula, R 7 is the resistance of the seventh resistor, R 8 is the resistance value of the eighth resistor.

[0090] In the embodiment of the present application, the input end of the current detection conversion submodule 22 is connected to the second end (such as the source S) of the semiconductor switch device 101. DSThe first inductor L flowing through the power source and Kelvin source of the semiconductor switch device 101 sS When the first inductor L sS The induced voltage V sS From the first formula, we can know that the current data I DS With voltage V sS The voltage V sS After the voltage is divided by the first resistor R1 and the third resistor R3 of the integration circuit, it is input to the first operational amplifier element OP1 to integrate the voltage signal. After the integration is completed, the voltage V sS The output first voltage signal V of the current detection conversion submodule 22 is adjusted to a suitable setting voltage range (eg, 0V to 5V). I_DS The current data I DS It is an approximately linear relationship, as shown in the second conversion formula.

[0091] It should be noted that the first formula is:

[0092]

[0093] The second conversion formula is:

[0094]

[0095] Where, L sS is the inductance of the first inductor, R 1 is the resistance of the first resistor, R 2 is the resistance of the second resistor, R 3 is the resistance of the third resistor, R 5 is the resistance value of the fifth resistor, R 6 is the resistance of the sixth resistor, C 1 is the capacitance value of the first capacitor.

[0096] Figure 4 This is a circuit diagram of a logic judgment module in a current source gate driving device of a semiconductor switch device described in an embodiment of the present application.

[0097] like Figure 4 As shown, in one embodiment of the present application, the logic judgment module 30 includes a comparison submodule and a logic judgment submodule;

[0098] A comparison submodule, configured to compare the first voltage signal with a first reference voltage of the voltage reference data, and output first level data; and to compare the second voltage signal with a second reference voltage of the voltage reference data, and output second level data;

[0099] The logic judgment submodule is used to perform AND calculation on the first level data and the second level data to obtain the third level data; directly perform AND logic processing on the third level data and the PWM switch signal to output a turn-on voltage square wave; or perform non-logical processing on the PWM switch signal and then perform AND logic processing on the third level data to output a turn-off voltage square wave.

[0100] It should be noted that if Figure 4 As shown, the comparison submodule includes a first comparator COMP1 and a second comparator COMP2. The logic judgment submodule 30 is composed of an AND gate and a NOT gate NOT, and the AND gate includes a first AND gate AND1, a second AND gate AND2 and a third AND gate AND3. In this embodiment, the logic judgment module 30 receives the first voltage signal V from the current and voltage detection module 20 through the cooperation between the comparison submodule and the logic judgment submodule. I_DS and the second voltage signal V V_DS and a first reference voltage V of the control module 10 ref1 , the second reference voltage V ref2 and PWM switch signal; on the one hand, it outputs a turn-on voltage square wave on and a turn-off voltage square wave off, which is responsible for triggering the auxiliary control module 40. The same-direction input terminal of the first comparator COMP1 is connected to the logic judgment module 30 to output the first voltage signal V I_DS The signal line of the first comparator COMP1 is connected to the reverse input terminal of the control module 10 to output the first reference voltage V ref1 The output terminal of the first comparator COMP1 is connected to one end of the first AND gate AND1. The same-direction input terminal of the second comparator COMP2 is connected to the logic judgment module 30 to output the second voltage signal V V_DS The signal line of the second comparator COMP2 is connected to the reverse input terminal of the control module 10 to output the second reference voltage V ref2 The output end of the second comparator COMP2 is connected to the other end of the first AND gate AND1. The output end of the first AND gate AND1 is connected to one input end of the second AND gate AND2 and the third AND gate AND3 respectively. The other input end of the second AND gate AND2 is connected to the signal line of the control module 10 outputting the PWM switch signal, and the input end of the control module 10 is connected. The output end of the second AND gate AND2 outputs the on voltage square wave on after logical judgment; the output end of the third AND gate AND3 outputs the off voltage square wave off after logical judgment.

[0101] In the embodiment of the present application, when the first voltage signal V I_DS The voltage amplitude is greater than the first reference voltage V ref1 When the second voltage signal V V_DS The voltage amplitude is greater than the second reference voltage Vref2 When the first comparator COMP1 and the second comparator COMP2 output a high level at the same time, the first AND gate AND1 will output a high level. For the second AND gate AND2, if the PWM switch signal and the first AND gate AND1 are both high levels, the second AND gate AND2 will output a high level, otherwise it will remain at a low level. For the third AND gate AND3, since the PWM switch signal is inverted, when the PWM switch signal is low, the NOT gate NOT will output a high level, and when the first AND gate AND1 outputs a high level, the third AND gate AND3 will output a high level, otherwise it will remain at a low level. When the second AND gate AND2 or the third AND gate AND3 outputs a high level, the auxiliary control module 40 will be triggered to work.

[0102] Figure 5 This is a circuit diagram of an auxiliary control module in a current source gate driving device of a semiconductor switch device described in an embodiment of the present application.

[0103] like Figure 5 As shown, in one embodiment of the present application, the auxiliary control module 40 includes an opening auxiliary submodule 41 and a closing auxiliary submodule 42;

[0104] The opening auxiliary submodule 41 is used to process the input opening voltage square wave according to the third reference voltage of the voltage reference data and the DC power supply to generate an opening current square wave I sink ;

[0105] The shutdown auxiliary submodule 42 is used to process the input shutdown current square wave according to the fourth reference voltage of the voltage reference data and the DC power supply to generate a shutdown current square wave I source .

[0106] It should be noted that the turn-on current square wave I generated by the turn-on auxiliary submodule 41 sink The shutdown auxiliary submodule 42 is responsible for changing the amplitude of the control current during the turn-on process of the semiconductor switch device 101. source Responsible for changing the amplitude of the control current when the semiconductor switch device 101 is in the off stage.

[0107] like Figure 5As shown, in the embodiment of the present application, the opening auxiliary submodule 41 includes a first switch tube Q1, a third switch tube Q3, a fourth switch tube Q4, a fifth switch tube Q5, a third operational amplifier element OP3, a tenth resistor R10, an eleventh resistor R11 and a twelfth resistor R12, a first end of the first switch tube Q1 is connected to the logic judgment module 30, a third end of the first switch tube Q1 is connected to the third end of the third switch tube Q3, a second end of the third switch tube Q3 is connected to the current source driving module 50 as the output end of the opening auxiliary submodule 41, and a first end of the third switch tube Q3 is connected to the first end of the fourth switch tube Q4 The third end of the fourth switch tube Q4 and the second end of the first switch tube Q1 are both grounded, the second end of the fourth switch tube Q4 is connected to the second end of the fifth switch tube Q5, the third end of the fifth switch tube Q5 is connected in series with the twelfth resistor R12 and connected to the DC power supply, the first end of the fifth switch tube Q5 is connected to the output end of the third operational amplifier element OP3, the positive input end of the third operational amplifier element OP3 is connected to the control module 10, the negative input end of the third operational amplifier element OP3 is connected in series with the tenth resistor R10 and grounded, and the negative input end of the third operational amplifier element OP3 and the output end thereof are connected in parallel with the eleventh resistor R11.

[0108] It should be noted that, in the opening auxiliary submodule 41, for the twelfth resistor R12, one end of the twelfth resistor is connected to the +15V DC power supply, and the other end of the twelfth resistor is connected to the third end of the PNP type fifth switch tube Q5; the first end of the fifth switch tube Q5 is connected to the output end of the third operational amplifier element OP3, and the second end of the fifth switch tube Q5 is connected to the second end of the NPN type fourth switch tube Q4; one end of the ninth resistor R9 is connected to the third reference voltage V output by the control module 10 ref3The first end of the fourth switch tube Q4 is connected to the first end of the third switch tube Q3 of the NPN type, and the third end of the fourth switch tube Q4 is connected to the ground; the first end of the third switch tube Q3 is connected to the first end and the second end of the fourth switch tube Q4 respectively; the second end of the third switch tube Q3 is connected to the cathode of the diode D1, and the third end of the third switch tube Q3 is connected to the third end of the first switch tube Q1 of the MOSFET; the first end of the first switch tube Q1 is connected to the signal line of the logic judgment module 30 outputting the turn-on voltage square wave on through the gate resistor, and the second end of the first switch tube Q1 is connected to the ground; the anode of the diode D1 serves as the output end of the auxiliary control module 40. In this embodiment, when the semiconductor switch device 10 is in the on stage, when the on voltage square wave on is at a high level, the first switch tube Q1 is turned on; the on auxiliary submodule 41 is activated, and the driving current I generated by the current source driving module 50 G The control current I that mainly flows through the opening auxiliary submodule 41, thereby reducing the charging of the first end of the semiconductor switch device 101 GA The current amplitude flowing into the opening auxiliary submodule 41 is expressed by the opening current formula. The opening current square wave I sink The start and end time and amplitude can be freely controlled, and the charging control current I can be indirectly realized according to the first control current formula GA Free control.

[0109] The turn-on current formula is:

[0110]

[0111] The first control current formula is:

[0112] In the formula, I sink is the current amplitude of the turn-on current square wave, V DE is the voltage between the first terminal and the third terminal of the fifth switch tube, which is generally 0.7V. 11 is the resistance value of the eleventh resistor, R 10 is the resistance of the tenth resistor, R 12 is the resistance of the twelfth resistor.

[0113] like Figure 5As shown, in the embodiment of the present application, the shutdown auxiliary submodule 42 includes a second switch tube Q2, a sixth switch tube Q6, a seventh switch tube Q7, an eighth switch tube Q8, a fourth operational amplifier element OP4, a fourteenth resistor R14, a fifteenth resistor R15 and a sixteenth resistor R16, a first end of the second switch tube Q2 is connected to the logic judgment module 30, a third end of the second switch tube Q2 is connected to the third end of the sixth switch tube Q6 through the sixteenth resistor R16, a first end of the sixth switch tube Q6 is connected to the output end of the fourth operational amplifier element OP4, a positive input end of the fourth operational amplifier element OP4 is connected to the control module 10, and the fourth operational amplifier element OP4 is connected to the control module 10. The negative input terminal of the operational amplifier element OP4 is connected in series with the fourteenth resistor R14 and is grounded. The negative input terminal of the fourth operational amplifier element OP4 and its output terminal are connected in parallel with the fifteenth resistor R15. The second end of the sixth switch tube Q6 is respectively connected to the second end of the eighth switch tube Q8, the first end of the eighth switch tube Q8 and the first end of the seventh switch tube Q7. The first end of the seventh switch tube Q7 is connected to the first end of the eighth switch tube Q8. The third end of the seventh switch tube Q7 and the third end of the eighth switch tube Q8 are both connected to the DC power supply. The second end of the seventh switch tube Q7 is connected to the current source driving module 50 as the output end of the shutdown auxiliary submodule 42.

[0114] It should be noted that in the shutdown auxiliary submodule 421, for the eighth NPN switch tube Q8, the third end of the eighth switch tube Q8 is connected to the +15V DC power supply, the first end of the eighth switch tube Q8 is connected to the second end of the eighth switch tube Q8, and the second end of the eighth switch tube Q8 is connected to the second end of the sixth switch tube Q6. The first end of the sixth switch tube Q6 is connected to the output end of the fourth operational amplifier element OP4, the third end of the sixth switch tube Q6 is connected to one end of the sixteenth resistor R16; one end of the thirteenth resistor R13 is connected to the fourth reference voltage V output by the control module 10. ref4The first end of the second switch tube Q2 is connected to the signal line of the output voltage square wave off through the gate resistor, and the second end of the second switch tube Q2 is connected to the ground; the third end of the seventh switch tube Q7 is connected to the +15V DC power supply, and the second end of the seventh switch tube Q7 is connected to the anode of the diode D2; the cathode of the diode D2 serves as the output end of the shutdown auxiliary submodule 42. In this embodiment, when the off voltage square wave off of the trigger signal is at a high level, the second switch tube Q2 is turned on; the off auxiliary submodule 42 is activated, and the off current square wave I is “injected” into the first end of the semiconductor switch device 101. source The current of the turn-off current square wave I source The current amplitude is the turn-off current formula. The turn-off current square wave I source The start and end time and amplitude can be freely controlled, and the discharge control current I can be indirectly realized according to the second control current formula GA Free control of the shutdown current. The shutdown current formula is:

[0115]

[0116] The second control current formula is:

[0117] In the formula, I source is the current amplitude of the turn-off current square wave, V DE1 is the voltage between the first terminal and the third terminal of the sixth switch tube, which is generally 0.7V. 14 is the resistance of the fourteenth resistor, R 15 is the resistance value of the fifteenth resistor, R 16 is the resistance of the sixteenth resistor.

[0118] In the embodiment of the present application, the first switch tube Q1 and the second switch tube Q2 can both be MOS tubes, the gate of the MOS tube serves as the first end of the first switch tube Q1 and the second switch tube Q2, the source of the MOS tube serves as the second end of the first switch tube Q1 and the second switch tube Q2, and the drain of the MOS tube serves as the third end of the first switch tube Q1 and the second switch tube Q2. The DC power supply can be a 15V DC power supply. The third operational amplifier element OP3 and the fourth operational amplifier element OP4 can both be selected as operational amplifiers. The third switch tube Q3, the fourth switch tube Q4, the fifth switch tube Q5, the sixth switch tube Q6, the seventh switch tube Q7 and the eighth switch tube Q8 can all be selected as triodes, the base of the triode serves as the first end of these switch tubes, the collector of the triode serves as the second end of these switch tubes, and the emitter of the triode serves as the third end of these switch tubes.

[0119] Figure 6 This is a circuit diagram of a current source driving module in a current source gate driving device of a semiconductor switch device described in an embodiment of the present application.

[0120] like Figure 6 As shown, in one embodiment of the present application, the current source driving module 50 includes a current source, a turn-off switch element Q off , turn on the switching element Q on , turn-off resistance R off and on-resistance R on , turn off the switching element Q off The third terminal of the conductive switch element Q on The third end of is connected in parallel with the first end of the current source; the switch element Q is turned off. off The second end of the conductive switch element Q on The second end of the auxiliary control module 40 is connected in parallel and the connection node is used as the output end of the current source driving module 50. The output end of the current source driving module 50 is connected to the first end G of the semiconductor switch device 101. The switch element Q is turned off. off The first end of the conductive switch element Q on The first end of the current source and the second end of the current source are connected to the second end S of the semiconductor switch device 101, and the switch element Q is turned off. off A first end of the semiconductor switch device 101 is connected to a second end S thereof and a turn-off resistor R is connected in series therebetween. off , turns on the switching element Q on The first end of the semiconductor switch device 101 is connected to the second end S of the semiconductor switch device 101 in series with the on-resistance R on .

[0121] It should be noted that the conducting switch element Q on With the switch element Q turned off off The parallel connection forms a parallel switch tube.on It can be a PNP type transistor, turning off the switch element Q off It can be an NPN transistor. Figure 6 As shown, in this embodiment, one end of the current source is connected to the emitter of the parallel switch tube, and the other end of the current source is connected to the Kelvin source S of the semiconductor switch device 101. The emitter and collector of the NPN transistor and the PNP transistor are connected in parallel, and the emitter after parallel connection is connected to the output end of the current source, and the collector after parallel connection is connected to the output end of the auxiliary control module 40, and then connected to the gate G of the semiconductor switch device 101. In addition, the base of the PNP transistor is connected to the on-resistance R on Connected; the base of the NPN transistor and the turn-off resistor R off Connected. On resistance R on and the off resistance R off The other end is connected to the Kelvin source S of the semiconductor switch device 101. The current source receives the PWM switching signal output by the control module 10, and outputs a positive level (+15V) or a negative level (-5V) according to the PWM switching signal. When the current source drives the output to a positive level, the PNP-type transistor is turned on, and the output current is expressed by the first drive current formula. When the current source drives the output to -5V, the NPN-type transistor is turned on, and the output current is expressed by the second drive current formula. The first drive current formula is:

[0122]

[0123] The second driving current formula is:

[0124]

[0125] Where V out is the output voltage of the current source, I G is the driving current, β on is the current gain of the on-state switching element, V BE is the base-emitter voltage drop, R on is the on-resistance, R off is the resistance value of the off resistor, β off is the current gain of the off-switch element. It is worth noting that if all parameters of the semiconductor switch device 101 remain constant during the switching process, the parallel switch output drive current I G is clamped to a constant value. To achieve the control current I GAThe auxiliary control module 40 is connected between the collector of the parallel switch tube and the first end (such as the gate connection end) of the semiconductor switch device 101. When the auxiliary control module 40 is triggered to work, the amplitude of the output current of the parallel switch tube will be actively changed. The output current after the change is the control current I GA .

[0126] Figure 7 Schematic diagram of the turn-on waveform of the current source gate driving device of the semiconductor switch device according to the embodiment of the present application, Figure 8 Schematic diagram of the turn-off waveform of the current source gate driving device of the semiconductor switch device described in the embodiment of the present application.

[0127] like Figure 2 , Figure 7 and Figure 8 As shown, in the embodiment of the present application, the switching waveforms of the conventional current source gate drive and the active current source gate drive of the current source gate drive device using the semiconductor switch device are further analyzed. 0 At this moment, the PWM switch signal becomes high level, I G quickly reaches the set value and the input capacitance (C iss =C Gs +C GD ) is charged, and the gate voltage of the semiconductor switching device 101 begins to rise. 1 At this moment, when the gate voltage of the semiconductor switch device 101 rises to the threshold voltage VT H After that, the semiconductor switch device 101 starts to conduct, and the current data I DS Rapidly increases due to the presence of the third inductor L loop , voltage data V DS Slightly decreased; voltage data V DS changes, the fourth switch capacitor C J Charging, resulting in current data I DS Overshoot and oscillation occur. It can be seen that the current data I DS The faster the change, the more serious the overshoot and oscillation will be, so the gate current amplitude of the semiconductor switch device 101 needs to be adjusted. 2 At this moment, the gate voltage of the semiconductor switch device 101 rises to the Miller platform V miller , pressure data V DS Rapid decline. 3 At this moment, the pressure data V DS drops to 0V, and the semiconductor switch device 101 is fully turned on. Then, the driving current I G Continue to the input capacitor C issThe charging is continued until the gate voltage of the semiconductor switch device 101 rises to +15V, and the turn-on process is completed. For high-performance current source drive, in order to suppress overshoot and oscillation, at t a1 -t a2 At the moment, the on voltage square wave on of the trigger signal changes from a low level to a high level. When the on auxiliary submodule 41 is turned on, most of the current output by the current source flows into the on auxiliary submodule 41. Therefore, the control current I flowing into the gate of the semiconductor switch device 101 GA will be reduced, and the turn-on speed of the semiconductor switch device 101 will be slowed down, thereby suppressing current overshoot and oscillation. 5 At this moment, the PWM switch signal becomes low potential, and the driving current I G quickly reaches the rated value, the input capacitance C of the semiconductor switching device 101 iss The gate voltage of the semiconductor switching device 101 begins to decrease. 6 At this moment, when the gate voltage of the semiconductor switch device 101 drops to the Miller platform V miller After that, the voltage data V DS Rapidly rises. At time t7, the voltage data V DS Rise to the set value V DC , voltage data V DS starts to decrease, affected by the second inductor L load The influence of voltage data V DS Overshoot and oscillation occur. 8 At this moment, the current data I DS The driving current I G Continue to the input capacitor C iss The discharge is continued until the gate voltage of the semiconductor switch device 101 drops to -5V. Excessive current change rate di / dt will directly lead to severe voltage overshoot and oscillation. In order to improve the above situation, the drive current I G The amplitude of the charge can be adjusted to appropriately slow down the charging speed. a3 -t a4 At this moment, the off voltage square wave off of the trigger signal is converted from a low level to a high level. The off auxiliary submodule 42 is turned on to inject current into the gate of the semiconductor switch device 101. At this time, the gate drive current injected into the semiconductor switch device 101 becomes the control current I GA Therefore, the input capacitor C iss The discharge current will be reduced and the turn-off speed will be slowed down, thus suppressing voltage overshoot and oscillation.

[0128] Fig. 9Schematic diagram of simulation waveforms of a current and voltage detection module in a current source gate driving device of a semiconductor switch device according to an embodiment of the present application, Fig.10 Schematic diagram of the simulation of the turn-on voltage square wave of the logic judgment module in the current source gate driving device of the semiconductor switch device according to the embodiment of the present application, Fig.11 Schematic diagram of the simulation of the turn-off voltage square wave of the logic judgment module in the current source gate driving device of the semiconductor switch device according to the embodiment of the present application, Fig.12 The figure is a comparison of the turn-on waveform and gate current waveform of two different gate drives (the solid line is the conventional gate drive, and the dotted line is the active gate drive); Fig.13 The figure is a comparison of the turn-off waveform and gate current waveform of two different gate drives (the solid line is the conventional gate drive, and the dotted line is the active gate drive).

[0129] In an embodiment of the present application, a circuit of the current source gate drive device of the semiconductor switching device is constructed and simulated on a power electronics simulation tool. Fig. 9 Shows the current data I DS , voltage data V DS , the first voltage signal V I_DS and the second voltage signal V V_DS , to verify the effectiveness of the current and voltage detection module 20. Since the above circuits are all composed of analog circuits, good real-time performance can be guaranteed. Fig. 9 It can be clearly seen that the output first voltage signal V of the current detection conversion submodule I_DS The current data I DS The voltage detection conversion submodule can also achieve the expected effect. The second voltage signal V V_DS Then, the first voltage signal V I_DS and the second voltage signal V V_DS With the first reference voltage V ref1 and the second reference voltage V ref2 The comparison is performed, and the comparison result and the PWM switch signal are logically operated to obtain a trigger signal of the auxiliary control module 40 (such as a turn-on voltage square wave on and a turn-off voltage square wave off). Figure 7 and Fig.10 As shown, the start time t of the trigger signal of the turn-on voltage square wave is a1 By the first reference voltage V ref1 OK, end time t a2 The second reference voltage V ref2 OK. Figure 8 and Fig.11 As shown, the start time t of the trigger signal of the turn-off voltage square wave off a3 The reference voltage is V and the second reference voltage is V ref2 OK, end time ta4 The first reference voltage V ref1 The control module 10 is responsible for outputting the first reference voltage V ref1 and the second reference voltage V ref2 , the start and end time of the turn-on voltage square wave on and the turn-off voltage square wave off can be controlled. Fig.12 and Fig.13 The switching phase simulation waveforms of conventional current source drive and active current source drive are shown respectively. Fig.12 and Fig.13 It can be clearly seen that under the conventional current source drive, in the opening stage, the current data I DS There is obvious overshoot and oscillation; in the shutdown stage, the voltage data V DS When using active current source driving, according to the pre-set reference voltage data (the first reference voltage V ref1 , the second reference voltage V ref2 , the third reference voltage V ref3 and the fourth reference voltage V ref4 ), the auxiliary control module 40 can actively change the control current I GA When the on-voltage square wave on and the off-voltage square wave off of the trigger signal are at a low level, under both driving conditions, the driving current I G , current data I DS And voltage data V DS The waveforms are basically the same; when the on-voltage square wave on and the off-voltage square wave off of the trigger signal are in the high level stage, the auxiliary control module 40 will reduce IG, resulting in the drive current I G A clear “notch” appears, slowing down the input capacitance C iss The charging / discharging speed, overshoot and oscillation of current and voltage are effectively suppressed; when the on-voltage square wave on and off-voltage square wave off of the trigger signal are low again, the driving current I G The voltage is restored to the set value, so that the semiconductor switch device 101 can be turned on or off quickly.

[0130] Embodiment 2:

[0131] Fig.14 This is a flow chart of the steps of the current source gate driving method of the semiconductor switching device described in an embodiment of the present application.

[0132] like Fig.14 As shown, an embodiment of the present application provides a current source gate driving method for a semiconductor switch device, which is applied to the current source gate driving device of the above-mentioned semiconductor switch device. The current source gate driving method includes the following steps:

[0133] S1. Obtaining PWM switching signals, voltage reference data, and current data and voltage data output by semiconductor switching devices;

[0134] S2. Convert the current data and the voltage data to obtain the corresponding first voltage signal and the second voltage signal;

[0135] S3. Compare the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, and perform a non-AND logic judgment process to obtain a turn-on voltage square wave and a turn-off voltage square wave;

[0136] S4. Converting the voltage reference data, the on-voltage square wave or the off-voltage square wave to obtain the corresponding on-current square wave or the off-current square wave;

[0137] S5. Obtain the driving current, adjust the driving current to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and accurately control the operation of the semiconductor switch device through the control current.

[0138] It should be noted that the contents of the steps in the current source gate driving method of the semiconductor switching device in Example 2 correspond to the contents of the modules in the current source gate driving device of the semiconductor switching device. The contents of the modules in the current source gate driving device of the semiconductor switching device have been described in Example 1, and the steps of the current source gate driving method of the semiconductor switching device will no longer be described in detail in this embodiment.

[0139] In the embodiment of the present application, the turn-on voltage square wave and the turn-off voltage square wave are obtained by comparing the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, and performing a non-AND logic judgment process, including:

[0140] Compare the first voltage signal with the first reference voltage of the voltage reference data and output first level data; compare the second voltage signal with the second reference voltage of the voltage reference data and output second level data;

[0141] Performing AND calculation on the first level data and the second level data to obtain third level data;

[0142] The third level data is directly processed with the PWM switch signal by AND logic to output a turn-on voltage square wave; or the PWM switch signal is processed with the third level data by non-logic processing and then processed by AND logic to output a turn-off voltage square wave.

[0143] Embodiment three:

[0144] Fig.15 A schematic diagram of a terminal device described in an embodiment of the present application.

[0145] like Fig.15As shown, an embodiment of the present application provides a terminal device, including a processor and a memory;

[0146] A memory, used for storing program codes and transmitting the program codes to a processor;

[0147] The processor is used to execute the current source gate driving method of the semiconductor switch device according to the instructions in the program code.

[0148] It should be noted that the processor is used to execute the steps in the above-mentioned embodiment of the current source gate driving method of a semiconductor switch device according to the instructions in the program code. Alternatively, the processor implements the functions of each module / unit in the above-mentioned system / device embodiments when executing the computer program.

[0149] Exemplarily, the computer program may be divided into one or more modules / units, one or more modules / units are stored in a memory and executed by a processor to complete the present application. One or more modules / units may be a series of computer program instruction segments capable of completing a specific function, and the instruction segments are used to describe the execution process of the computer program in a terminal device.

[0150] The terminal device may be a computing device such as a desktop computer, a notebook, a PDA, or a cloud server. The terminal device may include, but is not limited to, a processor and a memory. Those skilled in the art will appreciate that this does not constitute a limitation on the terminal device, and may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the terminal device may also include input and output devices, network access devices, buses, etc.

[0151] The processor may be a central processing unit (CPU), other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor, etc.

[0152] The memory may be an internal storage unit of the terminal device, such as a hard disk or memory of the terminal device. The memory may also be an external storage device of the terminal device, such as a plug-in hard disk, a smart memory card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the terminal device. Furthermore, the memory may include both an internal storage unit of the terminal device and an external storage device. The memory is used to store computer programs and other programs and data required by the terminal device. The memory may also be used to temporarily store data that has been output or is to be output.

[0153] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0154] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0155] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0156] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0157] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc., various media that can store program codes.

[0158] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A current source gate driving device for a semiconductor switching device, characterized in that: include: A control module, used for providing PWM switching signals and voltage reference data; A current and voltage detection module, connected to the semiconductor switch device, the current and voltage detection module is used to collect current data and voltage data output by the semiconductor switch device and convert the current data and the voltage data into corresponding first voltage signals and second voltage signals; A logic judgment module, used to be connected to the current and voltage detection module and the control module, and the logic judgment module is used to compare the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, and to make a non-logical judgment to generate a turn-on voltage square wave and a turn-off voltage square wave; an auxiliary control module, used for connecting with the logic judgment module and the control module, and used for generating a corresponding on-current square wave or off-current square wave according to the voltage reference data, the on-voltage square wave or the off-voltage square wave; A current source driving module is used to be connected to the auxiliary control module, the control module and the semiconductor switching device; the current source driving module is used to output a constant driving current according to the PWM switching signal, and to adjust the driving current to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and to accurately control the operation of the semiconductor switching device through the control current.

2. The current source gate driving device of a semiconductor switch device according to claim 1, characterized in that: The current and voltage detection module includes a voltage detection conversion submodule and a current detection conversion submodule; The voltage detection conversion submodule is used to collect the voltage data output by the semiconductor switch device and convert the voltage data into a second voltage signal within a set voltage range by using a voltage division method; The current detection conversion submodule is used to collect the current data output by the semiconductor switch device, and perform active integration and amplification processing on the current data to obtain a first voltage signal within a set voltage range.

3. The current source gate driving device of a semiconductor switch device according to claim 1, characterized in that: The logic judgment module includes a comparison submodule and a logic judgment submodule; The comparison submodule is used to compare the first voltage signal with the first reference voltage of the voltage reference data and output first level data; Compare the second voltage signal with a second reference voltage of the voltage reference data, and output second level data; The logic judgment submodule is used to perform AND calculation on the first level data and the second level data to obtain third level data; The third level data is directly processed with the PWM switch signal by AND logic to output a turn-on voltage square wave; or the PWM switch signal is processed with the third level data by AND logic after non-logic processing to output a turn-off voltage square wave.

4. The current source gate driving device of a semiconductor switch device according to claim 1, characterized in that: The auxiliary control module includes an opening auxiliary submodule and a closing auxiliary submodule; The turn-on auxiliary submodule is used to process the input turn-on voltage square wave according to the third reference voltage of the voltage reference data and the DC power supply to generate a turn-on current square wave; The shutdown auxiliary submodule is used to process the input shutdown current square wave according to the fourth reference voltage of the voltage reference data and the direct current power supply to generate a shutdown current square wave.

5. The current source gate driving device of a semiconductor switch device according to claim 4, characterized in that: The opening auxiliary submodule includes a first switch tube, a third switch tube, a fourth switch tube, a fifth switch tube, a third operational amplifier, a tenth resistor, an eleventh resistor and a twelfth resistor. The first end of the first switch tube is connected to the logic judgment module, the third end of the first switch tube is connected to the third end of the third switch tube, the second end of the third switch tube is connected to the current source driving module as the output end of the opening auxiliary submodule, the first end of the third switch tube is connected to the first end of the fourth switch tube, the third end of the fourth switch tube and the second end of the first switch tube are both grounded, the second end of the fourth switch tube is connected to the second end of the fifth switch tube, the third end of the fifth switch tube is connected in series with the twelfth resistor and connected to the DC power supply, the first end of the fifth switch tube is connected to the output end of the third operational amplifier, the positive input end of the third operational amplifier is connected to the control module, the negative input end of the third operational amplifier is connected in series with the tenth resistor and grounded, and the negative input end of the third operational amplifier and its output end are connected in parallel with the eleventh resistor.

6. The current source gate driving device of a semiconductor switch device according to claim 4, characterized in that: The shutdown auxiliary submodule includes a second switch tube, a sixth switch tube, a seventh switch tube, an eighth switch tube, a fourth operational amplifier, a fourteenth resistor, a fifteenth resistor and a sixteenth resistor. The first end of the second switch tube is connected to the logic judgment module, the third end of the second switch tube is connected to the third end of the sixth switch tube through the sixteenth resistor, the first end of the sixth switch tube is connected to the output end of the fourth operational amplifier, the positive input end of the fourth operational amplifier is connected to the control module, the negative input end of the fourth operational amplifier is connected in series with the fourteenth resistor and grounded, the negative input end of the fourth operational amplifier and the output end are connected in parallel with the fifteenth resistor, the second end of the sixth switch tube is respectively connected to the second end of the eighth switch tube, the first end of the eighth switch tube and the first end of the seventh switch tube, the first end of the seventh switch tube is connected to the first end of the eighth switch tube, the third end of the seventh switch tube and the third end of the eighth switch tube are both connected to the DC power supply, and the second end of the seventh switch tube is connected to the current source driving module as the output end of the shutdown auxiliary submodule.

7. The current source gate driving device of a semiconductor switch device according to claim 1, characterized in that: The current source driving module includes a current source, an off-switch element, an on-switch element, an off-resistance and an on-resistance, wherein the third end of the off-switch element is connected in parallel with the third end of the on-switch element and then connected to the first end of the current source; the second end of the off-switch element is connected in parallel with the second end of the on-switch element and then connected to the output end of the auxiliary control module and the connection node is used as the output end of the current source driving module, and the output end of the current source driving module is connected to the first end of the semiconductor switching device; the first end of the off-switch element, the first end of the on-switch element and the second end of the current source are all connected to the second end of the semiconductor switching device, the off-resistance is connected in series between the first end of the off-switch element and the second end of the semiconductor switching device, and the on-resistance is connected in series between the first end of the on-switch element and the second end of the semiconductor switching device.

8. A current source gate driving method for a semiconductor switch device, applied to a current source gate driving device for a semiconductor switch device as claimed in any one of claims 1 to 7, characterized in that: The current source gate driving method comprises the following steps: Acquire PWM switch signals, voltage reference data, and current data and voltage data output by semiconductor switch devices; Converting the current data and the voltage data to obtain corresponding first voltage signals and second voltage signals; According to the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, a comparison is performed and a non-AND logic judgment is performed to obtain a turn-on voltage square wave and a turn-off voltage square wave; Performing conversion processing according to the voltage reference data, the turn-on voltage square wave or the turn-off voltage square wave to obtain a corresponding turn-on current square wave or turn-off current square wave; A driving current is obtained, and the driving current is adjusted to a control current with adjustable amplitude according to the turn-on current square wave or the turn-off current square wave, and the operation of the semiconductor switch device is accurately controlled by the control current.

9. The current source gate driving method of a semiconductor switch device according to claim 8, characterized in that: According to the PWM switch signal, the voltage reference data, the first voltage signal and the second voltage signal, a comparison is performed, and a non-AND logic judgment is performed, and a turn-on voltage square wave and a turn-off voltage square wave are obtained, which includes: Compare the first voltage signal with a first reference voltage of the voltage reference data and output first level data; compare the second voltage signal with a second reference voltage of the voltage reference data and output second level data; Performing AND calculation on the first level data and the second level data to obtain third level data; The third level data is directly processed with the PWM switch signal by AND logic to output a turn-on voltage square wave; or the PWM switch signal is processed with the third level data by AND logic after non-logic processing to output a turn-off voltage square wave.

10. A terminal device, characterized in that: including a processor and a memory; The memory is used to store program codes and transmit the program codes to the processor; The processor is used to execute the current source gate driving method of the semiconductor switching device as claimed in claim 8 or 9 according to the instructions in the program code.

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