Solar cell electrode, preparation method of solar cell electrode, TOPCon cell and preparation method of TOPCon cell
Through the use of the double -peak sintering process and laser treatment in the sintering process of solar cells, a close large -scale silicon -silicon alloy is formed, which solves the problem of high filling factor and opening voltage in existing technologies, and improves the performance of battery performance.
Patent Information
- Application Number
- CN202411467837.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-18
- Publication Date
- 2025-01-24
AI Technical Summary
The sintering process of existing solar cells is difficult to reduce the damage to the passivation film while improving the ohmic contact effect, making it difficult for the battery to take into account both high filling factors and open circuit voltage.
It adopts a bimodal sintering process of first high-temperature fast firing and then low-temperature slow firing, combined with laser processing, controlling temperature and time to form a compact large-area silver-silicon alloy, reducing damage to the passivation film, and improving the content and stability of the silver-silicon alloy. sex.
While improving the effect of Ohm, reducing the damage to the passivation film, so that the battery has high filling factor and opening voltage at the same time.
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Figure CN119364897A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of solar cells, and in particular to a solar cell electrode and a preparation method thereof, a TOPCon cell and a preparation method thereof. Background Art
[0002] Battery sintering is one of the key steps in the production process of solar cells. During the sintering process, the electrode slurry reacts with silicon to form a silver-silicon alloy, thereby forming an ohmic contact between the silicon wafer and the metal electrode. The lower the contact resistance, the better the ohmic contact effect, and the higher the fill factor (FF) of the battery. At present, the ohmic contact effect is usually improved by increasing the sintering temperature. However, the higher the sintering temperature, the greater the damage to the passivation film, which will cause the open circuit voltage of the battery to decrease. Therefore, the current sintering process cannot reduce the damage to the passivation film while improving the ohmic contact effect, making it difficult for the battery to take into account both the fill factor and the open circuit voltage. Summary of the invention
[0003] Based on this, it is necessary to provide a solar cell electrode and a preparation method thereof and a TOPCon cell and a preparation method thereof to address the above problems. The preparation method of the electrode can improve the ohmic contact effect while reducing the damage to the passivation film, so that the cell has a high fill factor and open circuit voltage at the same time.
[0004] A method for preparing a solar cell electrode comprises the following steps:
[0005] Providing a cell precursor of an electrode to be prepared, and forming an electrode slurry at a preset electrode position of the cell precursor;
[0006] Sintering the cell precursor with the electrode slurry to obtain an initial electrode, wherein the sintering steps are sequentially heating, first constant temperature sintering, first cooling, second constant temperature sintering and second cooling, the first constant temperature sintering is performed at a temperature of 760°C-800°C and a time of 3s-10s, and the second constant temperature sintering is performed at a temperature of 700°C-740°C and a time of 10s-20s;
[0007] The cell precursor with the initial electrode is laser treated to obtain the electrode.
[0008] In one embodiment, the temperature difference between the first constant temperature sintering and the second constant temperature sintering is more than 40°C.
[0009] In one embodiment, the time of the first constant temperature sintering is shorter than the time of the second constant temperature sintering.
[0010] In one embodiment, the first constant temperature sintering time is 3s-8s.
[0011] In one embodiment, the heating rate of the heating step is 30°C / s-40°C / s.
[0012] In one embodiment, the cooling rate of the second cooling step is 20°C / s-30°C / s.
[0013] In one embodiment, the laser power in the laser processing step is 50W-200W, the bias voltage is 5V-15V, and the laser processing time is 0.4s-1s.
[0014] The invention also provides a solar cell electrode prepared by the method for preparing the solar cell electrode.
[0015] The present invention also provides a method for preparing a TOPCon cell, including the method for preparing the solar cell electrode.
[0016] The present invention also provides a TOPCon battery prepared by the preparation method of the TOPCon battery.
[0017] In the preparation method of the present invention, a preliminary silver-silicon alloy can be formed during the first constant temperature sintering. At the same time, due to the control of temperature and time, a large amount of silver microcrystals are melted at the opening of the passivation film. When the temperature is lowered for the second constant temperature sintering, the passivation film will basically not be damaged by the control of temperature and time. Only the silicon substrate below the passivation film will be corroded horizontally and vertically to form a compact and large area of silver-silicon alloy. Then, the silver-silicon alloy is further spread and grown inside the silicon substrate through laser treatment. Therefore, the damage to the passivation film can be reduced, the opening area of the passivation film can be reduced, and the content of the silver-silicon alloy inside the silicon substrate can be increased to form a good ohmic contact. Therefore, the battery can have a high fill factor and open circuit voltage at the same time. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0019] Figure 1 A schematic diagram of an electrode obtained by the preparation method of the present invention;
[0020] Figure 2 Another schematic diagram of an electrode obtained by the preparation method of the present invention;
[0021] Figure 3This is a local SEM image of the TOPCon battery electrode obtained in Example 1;
[0022] Figure 4 This is a local SEM image of the TOPCon battery electrode obtained in Example 4;
[0023] Figure 5 for Figure 4 The corresponding energy spectrum.
[0024] In the figure: 10, silicon substrate; 11, body region; 12, through-region; 13, contact region; 14, passivation film. DETAILED DESCRIPTION
[0025] For ease of understanding of the present invention, the present invention will be described in more detail below. However, it should be understood that the present invention can be implemented in many different forms and is not limited to the embodiments or examples described herein. On the contrary, the purpose of providing these embodiments or examples is to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific implementation methods or embodiments, and are not intended to limit the present invention. The optional scope of the term "and / or" used herein includes any one of two or more related listed items, and also includes any and all combinations of related listed items, and the combinations include any two related listed items, any more related listed items, or all related listed items.
[0027] In the present invention, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are deemed to be continuous and include the minimum and maximum values of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges included therein.
[0028] The method for preparing a solar cell electrode provided by the present invention comprises the following steps:
[0029] S1, providing a cell precursor of an electrode to be prepared, and forming an electrode slurry at a preset electrode position of the cell precursor;
[0030] S2, sintering the cell precursor with the electrode slurry to obtain an initial electrode, wherein the sintering steps are sequentially heating, first constant temperature sintering, first cooling, second constant temperature sintering and second cooling, the first constant temperature sintering is performed at a temperature of 760° C. to 800° C. for 3 s to 10 s, and the second constant temperature sintering is performed at a temperature of 700° C. to 740° C. for 10 s to 20 s;
[0031] S3, subjecting the cell precursor with the initial electrode to laser processing to obtain the electrode.
[0032] The preparation method of the electrode of the present invention is applicable to solar cells such as PERC cells, TOPCon cells and BC cells. In step S1, the cell precursor of the electrode to be prepared can be a cell precursor of a PERC cell, a cell precursor of a TOPCon cell, or a cell precursor of a BC cell. It can be understood that the cell precursor has completed processes from texturing to front and back side coating.
[0033] In solar cells, the electrode paste generally uses silver-aluminum paste, silver paste, etc. In step S1, it is preferred to print silver-aluminum paste on the front side of the cell precursor and print silver paste on the back side of the cell precursor.
[0034] In step S2, in the step of sintering the cell precursor with the electrode slurry, a preliminary silver-silicon alloy can be formed during the first constant temperature sintering. At the same time, due to the control of temperature and time, a large amount of silver microcrystals are melted at the opening of the passivation film. Then, when the temperature is lowered for the second constant temperature sintering, the passivation film will basically not be damaged by the control of temperature and time. Only the silicon substrate below the passivation film will be corroded laterally and vertically to form a compact and large area of silver-silicon alloy. Therefore, it can reduce the damage to the passivation film and reduce the opening area of the passivation film, and can also increase the content of silver-silicon alloy inside the silicon substrate to form a good ohmic contact.
[0035] In order to further reduce the damage to the passivation film and increase the content of silver-silicon alloy inside the silicon substrate, and improve the sintering effect, optionally, the temperature difference between the first constant temperature sintering and the second constant temperature sintering is more than 40°C, and / or the time of the first constant temperature sintering is less than the time of the second constant temperature sintering. Preferably, the time of the first constant temperature sintering is 3s-8s, including but not limited to 3s, 4s, 5s, 6s, 7s, 8s, etc.
[0036] It can be understood that before the cell precursor with the electrode slurry is sintered, the cell precursor with the electrode slurry is dried to remove the diluent in the electrode slurry. Therefore, in the heating step of the sintering treatment, the temperature is generally directly increased from the drying temperature to the temperature of the first constant temperature sintering. For example, when the drying temperature is 250°C, the temperature can be directly increased from 250°C to the temperature of the first constant temperature sintering. The heating rate of the heating step is 30°C / s-40°C / s, including but not limited to 30°C / s, 31°C / s, 32°C / s, 33°C / s, 34°C / s, 35°C / s, 36°C / s, 37°C / s, 38°C / s, 39°C / s, 40°C / s, etc., which can ensure that the heat energy has enough transfer time in the electrode slurry and ensure the uniformity of sintering, and can also control the energy consumption within a reasonable range and ensure the production capacity.
[0037] Similarly, after the second constant temperature sintering is completed, the temperature can be reduced to a certain range, such as 250°C, 200°C, etc. The cooling rate of the second cooling step is 20°C / s-30°C / s, including but not limited to 20°C / s, 21°C / s, 22°C / s, 23°C / s, 24°C / s, 25°C / s, 26°C / s, 27°C / s, 28°C / s, 29°C / s, 30°C / s, etc.
[0038] After the sintering treatment in step S2, the cell precursor with the initial electrode is subjected to laser irradiation again. During the laser treatment, the silver-silicon alloy can further spread and grow inside the silicon substrate, thereby improving the effect of ohmic contact and the stability of the formed silver-silicon alloy.
[0039] Optionally, the laser power in the laser processing step is 50W-200W, including but not limited to 50W, 60W, 70W, 80W, 90W, 100W, 110W, 120W, 130W, 140W, 150W, 160W, 170W, 180W, 190W, 200W, etc., the bias voltage is 5V-15V, including but not limited to 5V, 6V, 7V, 8V, 9V, 10V, 11V, 12V, 13V, 14V, 15V, etc., and the laser processing time is 0.4s-1s, including but not limited to 0.4s, 0.5s, 0.6s, 0.7s, 0.8s, 0.9s, 1s, etc.
[0040] Therefore, the present invention adopts a double-peak sintering process of first high-temperature fast firing and then low-temperature slow firing, and cooperates with laser processing to reduce the damage to the passivation film and reduce the opening area of the passivation film, and can also increase the content of silver-silicon alloy inside the silicon substrate to form a good ohmic contact. Therefore, the battery can have a high fill factor and open circuit voltage at the same time.
[0041] The present invention also provides a solar cell electrode prepared by the method for preparing a solar cell electrode. Figure 1 and Figure 2 As shown, the electrode includes a body region 11, a penetration region 12 and a contact region 13. The contact region 13 is located in the silicon substrate 10. The penetration region 12 penetrates the passivation film 14 and connects the body region 11 and the contact region 13 respectively.
[0042] The electrode prepared by the preparation method of the present invention has a smaller opening in the penetration zone 12. In the width direction of the electrode, the opening width of the penetration zone 12 is generally 200nm-1000nm, and the opening area is small, so the destructiveness to the passivation film 14 is small, and the open circuit voltage of the battery is high.
[0043] In addition, in the electrode prepared by the preparation method of the present invention, the penetration region 12 and the contact region 13 are both composed of silver-silicon alloy, but the proportions of silver and silicon are different. The penetration region 12 is a silver-rich phase, and the proportion of silver is generally 60%-80%, and the contact region 13 is generally a silicon-rich phase, and the proportion of silver is generally 20%-40%. At the same time, the morphology of the silver-silicon alloy constituting the contact region 13 can be as follows: Figure 1 The clusters shown can also be Figure 2 The filaments shown, etc.
[0044] Based on this, the present invention also provides a method for preparing a TOPCon cell, including the method for preparing the solar cell electrode.
[0045] It can be understood that the preparation method first forms a pyramid velvet surface on the front side of the silicon substrate through velvet cleaning to achieve an anti-reflection effect, then performs boron diffusion to form a PN junction, then performs etching and cleaning to remove the PN junction plating on the side and back side and complete the polishing of the back side, then uses LPCVD to deposit a tunneling silicon oxide layer and an intrinsic amorphous silicon layer on the back side, then performs phosphorus diffusion to form a doped amorphous silicon layer on the back side, then etches and cleans the front plating area, and finally deposits a passivation film on the front and back sides to complete the preparation of the TOPCon cell precursor, and then uses the electrode preparation method of the present invention to complete the preparation of the electrode.
[0046] The present invention also provides a TOPCon battery prepared by the preparation method of the TOPCon battery.
[0047] Hereinafter, the solar cell electrode and the preparation method thereof, the TOPCon cell and the preparation method thereof will be further described through the following specific examples.
[0048] Example 1
[0049] A pyramid velvet surface is formed on the front side of the silicon substrate, and then boron diffusion is performed to form a PN junction. Then etching and cleaning are performed to clean the PN junction plating on the side and back side and complete the polishing of the back side. Then, a tunneling silicon oxide layer and an intrinsic amorphous silicon layer are deposited on the back side by LPCVD. Then, a doped amorphous silicon layer is formed by phosphorus diffusion on the back side. Then, the front plating area is etched and cleaned. Finally, silicon oxide and silicon nitride are deposited on the front and back sides as passivation films to obtain a TOPCon cell precursor.
[0050] Silver-aluminum paste is printed on the front side of the TOPCon cell precursor, and silver paste is printed on the back side to form a cell precursor with electrode paste.
[0051] The cell precursor with electrode slurry was dried at 250°C and then sintered. During the sintering process, the temperature was first increased from 250°C to 780°C at a heating rate of 35°C / s, sintered at 780°C for 5s, then cooled to 720°C and sintered for 15s, and finally cooled to 250°C at a cooling rate of 25°C / s to obtain an initial electrode.
[0052] The cell precursor with the initial electrode was laser irradiated with a laser power of 150 W, a bias voltage of 13 V, and a laser treatment time of 0.8 s to obtain a TOPCon cell.
[0053] Example 2
[0054] The difference between Example 2 and Example 1 is that the cell precursor with electrode slurry is dried at 250°C and then sintered. During the sintering process, the temperature is first increased from 250°C to 800°C at a heating rate of 40°C / s, sintered at 800°C for 10s, then cooled to 740°C and sintered for 20s, and finally cooled to 250°C at a cooling rate of 30°C / s to obtain an initial electrode. The cell precursor with the initial electrode is then irradiated with a laser with a laser power of 200W, a bias voltage of 15V, and a laser treatment time of 1s to obtain a TOPCon cell.
[0055] Example 3
[0056] The difference between Example 3 and Example 1 is that the cell precursor with electrode slurry is dried at 250°C and then sintered. During the sintering process, the temperature is first increased from 250°C to 770°C at a heating rate of 30°C / s, sintered at 770°C for 8s, then cooled to 710°C and sintered for 13s, and finally cooled to 250°C at a cooling rate of 20°C / s to obtain the initial electrode. The cell precursor with the initial electrode is then irradiated with a laser with a laser power of 50W, a bias voltage of 5V, and a laser treatment time of 0.4s to obtain a TOPCon cell.
[0057] Example 4
[0058] The difference between Example 4 and Example 1 is that the cell precursor with electrode slurry is dried at 250°C and then sintered. During the sintering process, the temperature is first increased from 250°C to 760°C at a heating rate of 35°C / s, sintered at 760°C for 3s, then cooled to 700°C and sintered for 10s, and finally cooled to 250°C at a cooling rate of 25°C / s to obtain an initial electrode. The cell precursor with the initial electrode is then irradiated with a laser with a laser power of 150W, a bias voltage of 13V, and a laser treatment time of 0.4s to obtain a TOPCon cell.
[0059] Example 5
[0060] The difference between Example 5 and Example 4 is that the cell precursor with electrode slurry is dried at 250°C and then sintered. During the sintering process, the temperature is first increased from 250°C to 760°C at a heating rate of 35°C / s, sintered at 760°C for 3s, then cooled to 740°C and sintered for 10s, and finally cooled to 250°C at a cooling rate of 25°C / s to obtain the initial electrode. The cell precursor with the initial electrode is then irradiated with a laser with a laser power of 150W, a bias voltage of 13V, and a laser treatment time of 0.4s to obtain a TOPCon cell.
[0061] Example 6
[0062] The difference between Example 6 and Example 4 is that the cell precursor with electrode slurry is dried at 250°C and then sintered. During the sintering process, the temperature is first increased from 250°C to 760°C at a heating rate of 35°C / s, sintered at 760°C for 3s, then cooled to 730°C and sintered for 10s, and finally cooled to 250°C at a cooling rate of 25°C / s to obtain the initial electrode. The cell precursor with the initial electrode is then irradiated with a laser with a laser power of 150W, a bias voltage of 13V, and a laser treatment time of 0.4s to obtain a TOPCon cell.
[0063] Comparative Example 1
[0064] The only difference between Comparative Example 1 and Example 1 is that when the cell precursor with the electrode slurry is sintered, the temperature is increased from 250°C to 760°C, sintered at 760°C for 10 seconds, and then cooled from 760°C to 250°C, and no laser treatment is performed.
[0065] Comparative Example 2
[0066] The only difference between Comparative Example 2 and Example 1 is that no laser treatment is performed.
[0067] Comparative Example 3
[0068] The only difference between Comparative Example 3 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 720°C, sintered at 720°C for 15 seconds, and then increased from 720°C to 780°C, and sintered at 780°C for 5 seconds.
[0069] Comparative Example 4
[0070] The only difference between Comparative Example 4 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 750°C, sintered at 750°C for 5 seconds, and then increased from 750°C to 720°C, and sintered at 720°C for 15 seconds.
[0071] Comparative Example 5
[0072] The only difference between Comparative Example 5 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 810°C, sintered at 810°C for 5 seconds, and then increased from 810°C to 720°C, and sintered at 720°C for 15 seconds.
[0073] Comparative Example 6
[0074] The only difference between Comparative Example 6 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 780°C, sintered at 780°C for 15 seconds, and then increased from 780°C to 720°C, and sintered at 720°C for 15 seconds.
[0075] Comparative Example 7
[0076] The only difference between Comparative Example 7 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 780°C, sintered at 780°C for 5 seconds, and then increased from 780°C to 750°C, and sintered at 750°C for 15 seconds.
[0077] Comparative Example 8
[0078] The only difference between Comparative Example 8 and Example 1 is that when the cell precursor with electrode slurry is sintered, the temperature is increased from 250°C to 780°C, sintered at 780°C for 5 seconds, and then increased from 780°C to 720°C, and sintered at 720°C for 8 seconds.
[0079] The open circuit voltage (Uoc), short circuit current (Isc), fill factor (FF) and battery conversion efficiency (Eta) of the TOPCon batteries prepared in the above examples and comparative examples were tested, and the results are shown in Table 1.
[0080] Table 1
[0081] Uoc(V) Isc(A) FF(%) Eta(%) Example 1 0.7411 14.221 85.06 26.48 Example 2 0.7410 14.219 84.99 26.47 Example 3 0.7411 14.209 84.97 26.45 Example 4 0.7409 14.217 84.98 26.46 Example 5 0.7398 14.198 84.86 26.35 Example 6 0.7401 14.195 84.78 26.33 Comparative Example 1 0.732 14.055 81.47 24.75 Comparative Example 2 0.730 14.010 81.93 24.77 Comparative Example 3 0.732 14.032 81.25 24.67 Comparative Example 4 0.729 14.029 81.67 24.69 Comparative Example 5 0.731 14.043 81.49 24.73 Comparative Example 6 0.728 14.038 81.69 24.68 Comparative Example 7 0.729 14.039 81.67 24.71 Comparative Example 8 0.730 14.034 81.79 24.77
[0082] In addition, by Figure 3 and Figure 4 It can be seen that the openings of the passivation films in Examples 1 and 4 of the present invention are relatively small, and more passivation structures are retained. The silver-silicon alloy is distributed in flocculent and clustered forms in the two figures, respectively. Both distribution modes can increase the contact area. Figure 5 It can be seen that the silver-silicon alloy is divided into silver-rich areas and silicon-rich areas. The silver content in the silver-rich area is 70%, and silver is mainly enriched in the opening position of the passivation layer to provide good contact. The silver content in the silicon-rich area is 30%, and the opening of the silver-rich area is 500nm.
[0083] Combining Table 1 and Figures 3 to 5 It can be seen that the present invention can reduce the damage to the passivation film and reduce the opening area of the passivation film through a double-peak sintering process of first high-temperature fast firing and then low-temperature slow firing, and then cooperate with laser processing to assist, which can not only reduce the damage to the passivation film and reduce the opening area of the passivation film, but also increase the content of silver-silicon alloy inside the silicon substrate to form a good ohmic contact. Therefore, the battery can have a high fill factor, a high open circuit voltage, a low contact resistance and a high battery conversion efficiency.
[0084] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0085] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.
Claims
1. A method for preparing a solar cell electrode, characterized in that: The following steps are involved: Providing a cell precursor of an electrode to be prepared, and forming an electrode slurry at a preset electrode position of the cell precursor; Sintering the cell precursor with the electrode slurry to obtain an initial electrode, wherein the sintering steps are sequentially heating, first constant temperature sintering, first cooling, second constant temperature sintering and second cooling, the first constant temperature sintering is performed at a temperature of 760°C-800°C and a time of 3s-10s, and the second constant temperature sintering is performed at a temperature of 700°C-740°C and a time of 10s-20s; The cell precursor with the initial electrode is laser treated to obtain the electrode.
2. The method for preparing a solar cell electrode according to claim 1, characterized in that: The temperature difference between the first constant temperature sintering and the second constant temperature sintering is more than 40°C.
3. The method for preparing a solar cell electrode according to claim 1, characterized in that: The time of the first constant temperature sintering is shorter than the time of the second constant temperature sintering.
4. The method for preparing a solar cell electrode according to claim 3, characterized in that: The time of the first constant temperature sintering is 3s-8s.
5. The method for preparing a solar cell electrode according to claim 1, characterized in that: The heating rate of the heating step is 30°C / s-40°C / s.
6. The method for preparing a solar cell electrode according to claim 1, characterized in that: The cooling rate of the second cooling step is 20°C / s-30°C / s.
7. The method for preparing a solar cell electrode according to claim 1, characterized in that: The laser power in the laser processing step is 50W-200W, the bias voltage is 5V-15V, and the laser processing time is 0.4s-1s.
8. A solar cell electrode prepared by the method for preparing a solar cell electrode according to any one of claims 1 to 7.
9. A method for preparing a TOPCon battery, characterized in that: A method for preparing a solar cell electrode comprising the steps of:
10. A TOPCon battery prepared by the method for preparing a TOPCon battery according to claim 9.
Citation Information
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WO2026081549A1