Scribing design method and device for photovoltaic cell

Abstract

The invention discloses a lineation design method and device for a photovoltaic cell. The lineation design method for the photovoltaic cell comprises the steps that lineation setting parameters of the photovoltaic cell are obtained; the lineation setting parameters at least comprise a first original gap width between the P1 original lineation and the P2 original lineation and a second original gap width between the P2 original lineation and the P3 original lineation; determining a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the lineation setting parameter; the first correction parameter comprises a first extension width and a second extension width, and the second correction parameter comprises a third extension width and a fourth extension width; determining a dead zone scribing image according to the partial scribing setting parameter, the first correction parameter and the second correction parameter; the dead-zone scribe line image includes a P1 scribe line, a P2 scribe line, a P3 scribe line, a first gap between the P1 scribe line and the P2 scribe line, and a second gap between the P2 scribe line and the P3 scribe line.

Description

Technical Field

[0001] The present invention relates to the field of battery technology, and in particular to a photovoltaic cell scribing design method and device. Background Art

[0002] Solar thin film cells are a type of photovoltaic device that uses sunlight to generate electricity directly. They have the advantages of small mass, thin thickness, flexibility, and low raw material cost. In recent years, solar thin film cells have developed rapidly and accounted for an increasing proportion in the field of photovoltaic power generation. Currently, the solar thin film cell materials that have been industrially prepared mainly include cadmium telluride, copper selenium, amorphous silicon, gallium arsenide, perovskite and other thin film cells.

[0003] For large-area thin-film battery modules, in order to obtain appropriate voltage and current output, P1, P2 and P3 lines can be drawn by laser or mechanical scribing to achieve "division" and "series connection" of the battery. In the prior art, the area between the P1 and P3 lines does not participate in the power generation and light absorption process of the battery, cannot produce photoelectric conversion, and has no contribution to the power of the module. Therefore, the area between the P1 and P3 lines is called a dead zone. During the operation of the battery, the dead zone will increase the internal resistance of the battery, increase the battery temperature, and thus reduce the working stability of the battery. Therefore, how to reduce the area of ​​the ineffective area in the solar cell module has become a technical problem that needs to be solved urgently. Summary of the invention

[0004] The present invention provides a photovoltaic cell scribing design method and device to reduce the dead zone area of ​​the photovoltaic cell, thereby reducing the internal resistance and operating temperature of the photovoltaic cell, and improving the working stability and working efficiency of the photovoltaic cell.

[0005] In a first aspect, the present invention provides a photovoltaic cell scribing design method, comprising:

[0006] Acquire the scribing setting parameters of the photovoltaic cell; the scribing setting parameters at least include a first original gap width between the P1 original scribing line and the P2 original scribing line, and a second original gap width between the P2 original scribing line and the P3 original scribing line; the P1 original scribing line, the P2 original scribing line, the P3 original scribing line, the first original gap, and the second original gap are all rectangular;

[0007] Determine, according to the scribing setting parameters, a first correction parameter of the first original gap and a second correction parameter of the second original gap; the first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width;

[0008] Determine a dead zone line image according to part of the line setting parameters, the first correction parameter and the second correction parameter; the line setting parameters further include a P1 original line size, a P2 original line size and a P3 original line size; the dead zone line image includes a P1 line, a P2 line, a P3 line, a first gap between the P1 line and the P2 line, and a second gap between the P2 line and the P3 line;

[0009] The sum of the areas of the first original gap and the second original gap is a first area, the sum of the areas of the first gap and the second gap is a second area, and the first area is greater than the second area.

[0010] Optionally, determining a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the scribing setting parameter includes:

[0011] Determining whether the first original gap width and the second original gap width are both equal to zero;

[0012] If not, determining whether the first original gap width is greater than zero;

[0013] If yes, determining the first correction parameter according to the first original gap width;

[0014] The second correction parameter is determined according to the line setting parameter.

[0015] Optionally, determining the first correction parameter according to the first original gap width includes:

[0016] The first extension width and the second extension width of the first gap are determined according to the first original gap width; the first extension width and / or the second extension width are smaller than the first original gap width.

[0017] Optionally, if the width of the first original gap is equal to zero, the first original gap width is used as the first correction parameter.

[0018] Optionally, determining the second correction parameter according to the line setting parameter includes:

[0019] Determining whether the second original gap width is greater than zero;

[0020] If so, the second correction parameter is determined according to the second original gap width.

[0021] Optionally, determining the second correction parameter according to the second original gap width includes:

[0022] A third extension width and a fourth extension width of the second gap are determined according to the second original gap width; the third extension width and / or the fourth extension width is smaller than the second original gap width.

[0023] Optionally, if the second original gap width is equal to zero, the second original gap width is used as the second correction parameter.

[0024] Optionally, determining a dead zone marking image according to part of the marking setting parameters, the first correction parameter, and the second correction parameter includes:

[0025] Determine a first end point and a second end point according to the original marking size of P1 and the first correction parameter;

[0026] Determine a third termination point and a fourth termination point according to the first termination point, the second termination point, and the original stroke size of P2;

[0027] Determining a fifth end point and a sixth end point according to the third end point, the fourth end point and the second correction parameter;

[0028] Determine a seventh termination point and an eighth termination point according to the fifth termination point, the sixth termination point and the original stroke size of P3;

[0029] sequentially connecting the first termination point, the second termination point, the fourth termination point and the third termination point to form the P2 line;

[0030] The fifth termination point, the sixth termination point, the eighth termination point and the seventh termination point are sequentially connected to form the P3 line.

[0031] Optionally, determining a first end point and a second end point according to the original marking size of P1 and the first correction parameter includes:

[0032] According to the P1 original marking line size, marking the P1 marking line having the P1 original marking line size;

[0033] The side length of the P1 line close to the first original gap is used as a first reference line; the first reference line includes a first endpoint and a second endpoint;

[0034] Taking the first endpoint as a reference point, along the P1 line in the direction of the first original gap, taking a point with the first extension width between the first endpoint and the first gap as a first end point of the first gap;

[0035] The second endpoint is taken as the reference point, and a point with the second extension width between the second endpoint and the second endpoint in a direction pointing to the first original gap along the P1 line is taken as a second termination point of the first gap.

[0036] In a second aspect, the present invention provides a photovoltaic cell scribing design device, comprising:

[0037] A scribing setting parameter acquisition module, used to acquire scribing setting parameters of the photovoltaic cell; the scribing setting parameters at least include a first original gap width between the P1 original scribing line and the P2 original scribing line, and a second original gap width between the P2 original scribing line and the P3 original scribing line; the P1 original scribing line, the P2 original scribing line, the P3 original scribing line, the first original gap, and the second original gap are all rectangular;

[0038] a correction parameter determination module, configured to determine a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the scribing setting parameter; the first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width;

[0039] A marking image determination module is used to determine a dead zone marking image according to part of the marking setting parameters, the first correction parameter and the second correction parameter; the marking setting parameters also include P1 original marking size, P2 original marking size and P3 original marking size; the dead zone marking image includes P1 marking, P2 marking, P3 marking, a first gap between the P1 marking and the P2 marking, and a second gap between the P2 marking and the P3 marking; wherein the sum of the areas of the first original gap and the second original gap is a first area, the sum of the areas of the first gap and the second gap is a second area, and the first area is greater than the second area.

[0040] The technical solution provided by the present invention obtains the marking setting parameters of the photovoltaic cell, and determines the first correction parameter of the first original gap and the second correction parameter of the second original gap according to the value of the first original gap width between the P1 original marking line and the P2 original marking line in the marking setting parameters, and the value of the second original gap width between the P2 original marking line and the P3 original marking line. The sum of the areas of the first original gap and the second original gap is the first area, and the dead zone marking image is determined according to the first correction parameter, the second correction parameter and part of the marking setting parameters. The sum of the areas of the first gap and the second gap in the dead zone marking image is the second area, the first area is greater than the second area, and the sum of the areas of the P1 marking line, the P2 marking line and the P3 marking line in the dead zone marking image is equal to the sum of the areas of the P1 original marking line, the P2 original marking line and the P3 original marking line, so as to ensure the marking reliability of the photovoltaic cell, and the dead zone area in the dead zone marking image is smaller than the original dead zone area formed by the marking setting parameters, so as to reduce the dead zone occupied area of ​​the photovoltaic cell, thereby reducing the internal resistance and working temperature of the photovoltaic cell, and improving the working stability and working efficiency of the photovoltaic cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A flow chart of a photovoltaic cell scribing design method provided by an embodiment of the present invention;

[0042] Figure 2 A schematic diagram of the structure of a line drawing image including line drawing setting parameters provided by an embodiment of the present invention;

[0043] Figure 3 A schematic diagram of the structure of a photovoltaic cell provided by an embodiment of the present invention;

[0044] Figure 4 A schematic diagram of a dead zone marking image provided by an embodiment of the present invention;

[0045] Figure 5 A flow chart of another photovoltaic cell scribing design method provided by an embodiment of the present invention;

[0046] Figure 6 A schematic diagram of another dead zone marking image provided by an embodiment of the present invention;

[0047] Figure 7 A flow chart of another photovoltaic cell scribing design method provided by an embodiment of the present invention;

[0048] Figure 8 A schematic diagram of a marking process of a dead zone marking image provided by an embodiment of the present invention;

[0049] Fig. 9 A schematic structural diagram of a photovoltaic cell scribing design device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0050] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0051] Figure 1 The flowchart of a photovoltaic cell line design method provided by an embodiment of the present invention is applicable to the case where the dead zone area of ​​the photovoltaic cell is adjusted. The method can be executed by the photovoltaic cell line design device provided by an embodiment of the present invention. The photovoltaic cell line design device can be implemented in the form of hardware and / or software. Figure 1 As shown, the photovoltaic cell scribing design method includes:

[0052] S11, obtaining the marking setting parameters of the photovoltaic cell.

[0053] in, Figure 2 A structural schematic diagram of a line drawing image including line drawing setting parameters provided by an embodiment of the present invention is shown in FIG. Figure 2 As shown, the scribing line setting parameters at least include a first original gap width L1 between the P1 original scribing line P10 and the P2 original scribing line P20, and a second original gap width L2 between the P2 original scribing line P20 and the P3 original scribing line P30. The P1 original scribing line P10, the P2 original scribing line P20, the P3 original scribing line P30, the first original gap G10, and the second original gap G20 are all rectangular. The sum of the areas of the first original gap G10 and the second original gap G20 is the first area S1.

[0054] It should be noted that Figure 3 A schematic diagram of a photovoltaic cell structure provided by an embodiment of the present invention, referring to Figure 2 and Figure 3 , Figure 3 The photovoltaic cells in Figure 2 The photovoltaic cell includes a substrate 01, a bottom electrode layer 10, an absorption layer 30 and a top electrode layer 20. The substrate 01 includes a transparent glass substrate, etc., the bottom electrode layer 10 includes a metal electrode or a transparent conductive film electrode, etc., the absorption layer 30 is made of a semiconductor material, the absorption layer 30 may include an electron transport layer, a perovskite layer and a hole transport layer, etc., and the top electrode layer 20 includes materials such as AZ0, ITO, FTO, IZO or graphene, which can be set according to actual needs. Figure 3The preparation process of the photovoltaic cell is as follows: a bottom electrode layer 10 is deposited on the substrate 01, and a P1 original line P10 is scratched in the bottom electrode layer 10 by a laser device or a mechanical scribing device according to the scribing setting parameters to complete the sub-cell segmentation: an absorption layer 30 is deposited on the surface of the bottom electrode layer 10 on the side away from the substrate 01, and a P2 original line P20 is scratched at a position with a first original gap G10 between the P1 original line P10 and the sub-cell series channel is scratched by a laser device or a mechanical scribing device according to the scribing setting parameters; a top electrode layer 20 is deposited on the surface of the absorption layer 30 on the side away from the substrate 01, and a P3 original line P30 is scratched at a position with a second original gap G20 between the P2 original line P20 and the top electrode is segmented. The area E1 located on the side of the P1 original scribe line P10 away from the P2 original scribe line P20 is the effective cell area, and the area between the P1 original scribe line P10 and the P3 original scribe line P30 is called the dead area E0. No photoelectric conversion can occur in this area, and it has no contribution to the component power. This area will occupy the regional area of ​​the photovoltaic cell and reduce the overall power of the photovoltaic cell.

[0055] Specifically, the marking setting parameters of the photovoltaic cell can be obtained through a marking device, and the marking device includes computer-aided design (CAD) software and the like. The first original gap width L1 between the P1 original scribe line P10 and the P2 original scribe line P20, the second original gap width L2 between the P2 original scribe line P20 and the P3 original scribe line P30, and the sizes of the P1 original scribe line P10, the P2 original scribe line P20, and the P3 original scribe line P30 can be set according to actual needs. For example, the size of the P1 original scribe line P10 is a×d1, the size of the P2 original scribe line P20 is a×d1, the size of the P3 original scribe line P30 is a×d1, the size of the first original gap G10 is L1×d1, the size of the second original gap G20 is L2×d1, and the sum of the areas of the first original gap G10 and the second original gap G20 is the first area S1, S1=(L1+L2)×d1, wherein a is 50μm, L1 and L2 are both 90μm, and d1 is 300mm.

[0056] S12. Determine a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the marking setting parameters.

[0057] The first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width.

[0058] Specifically, the first original gap G10 and the second original gap G20 are both rectangular, so the first original gap G10 has only one width L1, and the second original gap G20 has only one width L2. At this time, the area of ​​the first original gap G10 is the rectangular area formed by the first original gap G10, and the area of ​​the second original gap G20 is the rectangular area formed by the second original gap G20. According to the numerical value of the first original gap width L1, the first extension width and the second extension width, both smaller than the first original gap width L1, can be determined; or the first extension width equal to the first original gap width L1 is smaller than the second extension width of the first original gap width L1; or the first extension width and the second extension width, both equal to the first original gap width L1. According to the numerical value of the second original gap width L2, the third extension width and the fourth extension width, both smaller than the second original gap width L2, can be determined; or the third extension width equal to the second original gap width L2 is smaller than the fourth extension width of the second original gap width L2; or the third extension width and the fourth extension width, both equal to the second original gap width L2.

[0059] S13, determining a dead zone marking image according to the partial marking setting parameters, the first correction parameters and the second correction parameters.

[0060] The marking setting parameters also include the original marking size of P1, the original marking size of P2 and the original marking size of P3. Figure 4 A schematic diagram of a dead zone line image provided by an embodiment of the present invention, such as Figure 4 As shown, the dead zone line image includes P1 line P11, P2 line P21, P3 line P31, a first gap G11 between P1 line P11 and P2 line P21, and a second gap G21 between P2 line P21 and P3 line P31. The sum of the areas of the first gap G11 and the second gap G21 is the second area S2, and the first area S1 is greater than the second area S2.

[0061] Specifically, some of the line setting parameters include P1 original line size, P2 original line size, and P3 original line size. Figure 2 and Figure 4, the method for determining the dead zone line image can refer to the following description, draw the P1 line P11 according to the P1 original line dimension line, and set the two endpoints of the same long side of the P1 line P11 as the first endpoint and the second endpoint respectively. According to the first extension width L11 and the second extension width L12 in the first correction parameter, along the direction from the first endpoint to the first gap G11, the point with the first extension width between the first endpoint and the first end point is determined as the first end point of the first gap G11, and the point with the second extension width between the second endpoint and the first end point is determined as the second end point of the first gap G11. The area surrounded by the first endpoint, the second endpoint, the first end point and the second end point is the first gap G11. Then, the P2 line P21 is drawn based on the original line size of P2 and the first and second end points as references. Since the width of the photovoltaic cell is fixed, that is, the P1 line and the P2 line have the same length d1, the point with the width value between the first end point and the second end point can be determined as the third end point according to the width in the original line size of P2, and the point with the width value between the first end point and the second end point can be determined as the fourth end point. The first end point, the second end point, the third end point and the fourth end point are connected to form the P2 line P21. Then, based on the third extension width L21 and the fourth extension width L22 in the second correction parameter, in the direction from the third end point to the second gap G21, the point with the third extension width between the third end point and the fourth end point is determined as the fifth end point of the second gap G21, and the point with the fourth extension width between the fourth end point and the fourth end point is determined as the sixth end point of the second gap G21. The area surrounded by the third end point, the fourth end point, the fifth end point and the sixth end point is the second gap G21. Then, taking the fifth and sixth termination points as references, the P3 line P31 is drawn according to the original line size of P3. Since the width of the photovoltaic cell is fixed, the P3 line and the P2 line have the same length d1. Therefore, according to the width in the original line size of P3, the point with the width value between the fifth termination point and the sixth termination point can be determined as the eighth termination point. The fifth termination point, the sixth termination point, the seventh termination point and the eighth termination point are connected to form the P3 line P31.In this way, the dead zone of the photovoltaic cell is adjusted according to the first correction parameter and the second correction parameter, the sum of the areas of the first gap G11 and the second gap G21 is the second area S2, the second area S2 is smaller than the original first area S1, the areas of the P1 line, the P2 line and the P3 line are equal to the areas of the P1 original line, the P2 original line and the P3 original line, the dead zone area of ​​the photovoltaic cell after adjustment is the sum of the areas of the first gap G11, the second gap G21, the P1 line, the P2 line and the P3 original line, the dead zone area of ​​the photovoltaic cell before adjustment is the sum of the areas of the first original gap G10, the second original gap G20, the P1 original line, the P2 original line and the P3 original line, the dead zone area of ​​the photovoltaic cell after adjustment is smaller than the dead zone area of ​​the photovoltaic cell before adjustment, thereby reducing the internal resistance and operating temperature of the photovoltaic cell, and improving the working stability and working efficiency of the photovoltaic cell.

[0062] The technical solution provided by the present invention obtains the marking setting parameters of the photovoltaic cell, and determines the first correction parameter of the first original gap and the second correction parameter of the second original gap according to the value of the first original gap width between the P1 original marking line and the P2 original marking line in the marking setting parameters, and the value of the second original gap width between the P2 original marking line and the P3 original marking line. The sum of the areas of the first original gap and the second original gap is the first area, and the dead zone marking image is determined according to the first correction parameter, the second correction parameter and part of the marking setting parameters. The sum of the areas of the first gap and the second gap in the dead zone marking image is the second area, the first area is greater than the second area, and the sum of the areas of the P1 marking line, the P2 marking line and the P3 marking line in the dead zone marking image is equal to the sum of the areas of the P1 original marking line, the P2 original marking line and the P3 original marking line, so as to ensure the marking reliability of the photovoltaic cell, and the dead zone area in the dead zone marking image is smaller than the original dead zone area formed by the marking setting parameters, so as to reduce the dead zone occupied area of ​​the photovoltaic cell, thereby reducing the internal resistance and working temperature of the photovoltaic cell, and improving the working stability and working efficiency of the photovoltaic cell.

[0063] On the basis of the above-mentioned embodiment, the embodiment of the present invention describes the case of determining the first correction parameter of the first original gap and the second correction parameter of the second original gap according to the scribing setting parameters. Figure 5 A flowchart of another photovoltaic cell scribing design method provided by an embodiment of the present invention, such as Figure 5 As shown, the scribing design method of a photovoltaic cell includes:

[0064] S21. Obtaining the marking setting parameters of the photovoltaic cell.

[0065] The line setting parameters at least include a first original gap width between the P1 original line and the P2 original line, and a second original gap width between the P2 original line and the P3 original line; the P1 original line, the P2 original line, the P3 original line, the first original gap, and the second original gap are all rectangular. The sum of the areas of the first original gap and the second original gap is the first area.

[0066] S22, determining whether the first original gap width and the second original gap width are both equal to zero; if not, executing S23.

[0067] Specifically, refer to Figure 2 If the first original gap width L1 and the second original gap width L2 are both zero, it means that the original marking line P1 is adjacent to the original marking line P2, the original marking line P2 is adjacent to the original marking line P3, and the sum of the areas between the first original gap G10 and the second original gap G20 is zero. At this time, there is no need to adjust the first original gap G10 and the second original gap G20. The dead zone area can only be achieved by reducing the size of the original marking line P1, the original marking line P2, and the original marking line P3. However, due to the limitation of the marking accuracy of the marking equipment, the dead zone area is limited. When at least one of the first original gap width L1 and the second original gap width L2 is not equal to zero, the dead zone area can be reduced by reducing the area of ​​the first original gap G10 or the second original gap G20.

[0068] S23, determine whether the first original gap width is greater than zero; if so, execute S24.

[0069] Specifically, if the first original gap width L1 is greater than zero, it means that the first original gap G10 still has room to be reduced, and the first correction coefficient can be determined based on the first original gap width L1. If the first original gap width L1 is equal to zero, it means that the area of ​​the first original gap G10 has reached the minimum, and the first original gap width L1 can be used as the first correction coefficient.

[0070] Optionally, when the first original gap width L1 is equal to zero, the first extension width L11 and the second extension width L12 are set to be equal to the first original gap width L1.

[0071] S24. Determine a first correction parameter according to the first original gap width.

[0072] Specifically, refer to Figure 2 and Figure 4, when the first original gap width L1 is greater than zero, the first extension width L11 and the second extension width L12 in the first correction parameter may both be greater than zero, and at least one of the first extension width L11 and the second extension width L12 is smaller than the first original gap width L1, so that the area of ​​the first gap G11 corrected by the first correction coefficient is smaller than the area of ​​the first original gap G10 before correction, so as to reduce the dead zone area. In other optional embodiments, the first extension width L11 and the second extension width L12 may both be equal to zero, which is not specifically limited here.

[0073] Optionally, determining the first correction parameter according to the first original gap width includes determining a first extension width and a second extension width of the first gap according to the first original gap width.

[0074] The first extension width L11 and / or the second extension width L12 is smaller than the first original gap width L1.

[0075] Specifically, refer to Figure 2 and Figure 4 , the second extension width L12 may be equal to the first original gap width L1, and the first extension width L11 may be smaller than the first original gap width L1, so that the corrected first gap G1 is a trapezoid. Figure 2 and Figure 6 , the second extension width L12 may be equal to the first original gap width L1, and the first extension width L11 may be equal to zero, so that the corrected first gap G1 is a triangle. Alternatively, the first extension width L11 and the second extension width L12 are both greater than zero and less than the first original gap width L1, so that the area of ​​the first gap G11 corrected according to the first extension width L11 and the second extension width L12 is still smaller than the area of ​​the first original gap G10 before correction.

[0076] S25. Determine whether the second original gap width is greater than zero; if so, execute S26; if not, execute S27.

[0077] Specifically, if the second original gap width L2 is greater than zero, it means that the second original gap G20 still has room to be reduced, and the second correction coefficient can be determined based on the second original gap width L2. If the second original gap width L2 is equal to zero, it means that the area of ​​the second original gap G20 has reached the minimum, and the second original gap width L2 can be used as the second correction coefficient.

[0078] S26. Determine a third extension width and a fourth extension width of the second gap according to the second original gap width.

[0079] The third extension width and / or the fourth extension width is / are smaller than the second original gap width.

[0080] Specifically, refer to Figure 2 and Figure 4 , the fourth extension width L22 may be equal to the second original gap width L2, and the third extension width L21 may be smaller than the second original gap width L2, so that the corrected second gap G2 is a trapezoid. Figure 2 and Figure 6 , the fourth extension width L22 may be equal to the second original gap width L2, and the third extension width L21 may be equal to zero, so that the corrected second gap G2 is a triangle. Alternatively, the third extension width L21 and the fourth extension width L22 may both be greater than zero and less than the second original gap width L2, so that the area of ​​the second gap G21 corrected according to the third extension width L21 and the fourth extension width L22 is still smaller than the area of ​​the second original gap G20 before correction.

[0081] S27. Use the second original gap width as a second correction parameter.

[0082] Specifically, when the second original gap width L2 is equal to zero, the third extension width L21 and the fourth extension width L22 are set to be equal to the second original gap width L2.

[0083] S28, determining a dead zone marking image according to the partial marking setting parameters, the first correction parameters and the second correction parameters.

[0084] The line setting parameters further include the original line size of P1, the original line size of P2, and the original line size of P3; the dead zone line image includes the P1 line, the P2 line, the P3 line, a first gap between the P1 line and the P2 line, and a second gap between the P2 line and the P3 line. The sum of the areas of the first gap and the second gap is the second area, and the first area is greater than the second area.

[0085] The technical solution of the present invention determines whether the first original gap width and the second original gap width are both equal to zero, and on the basis that at least one of the first original gap width and the second original gap width is not equal to zero, if the first original gap width and the second original gap width are both greater than zero, then the first correction parameter is determined according to the first original gap width, so that the first gap after the first original gap is corrected according to the first correction parameter has a smaller area, and the second correction parameter is determined according to the second original gap width, so that the second gap after the second original gap is corrected according to the second correction parameter has a smaller area. If the first original gap width is greater than zero and the second original gap width is equal to zero, then the first correction parameter is determined according to the first original gap width, so that the first gap after the first original gap is corrected according to the first correction parameter has a smaller area, and the second original gap width is used as the second correction parameter. If the second original gap width is greater than zero and the first original gap width is equal to zero, the first original gap width is used as the first correction parameter, and the second correction parameter is determined according to the second original gap width, so that the second gap after the second original gap is corrected according to the second correction parameter has a smaller area. In this way, after the first original gap and the second original gap are corrected according to the first correction parameter and the second correction parameter, the sum of the areas of the first gap and the second gap is smaller than the sum of the areas of the first original gap and the second original gap, so as to reduce the area occupied by the dead zone, reduce the internal resistance and operating temperature of the photovoltaic cell, and improve the working stability and working efficiency of the photovoltaic cell.

[0086] On the basis of the above-mentioned embodiment, the embodiment of the present invention describes the case of determining the dead zone marking image according to the partial marking setting parameter, the first correction parameter and the second correction parameter. Figure 7 A flowchart of another photovoltaic cell scribing design method provided by an embodiment of the present invention is shown in FIG. Figure 7 As shown, the scribing design method of a photovoltaic cell includes:

[0087] S31, obtaining the marking setting parameters of the photovoltaic cell.

[0088] The line setting parameters at least include the first original gap width between the P1 original line and the P2 original line, and the second original gap width between the P2 original line and the P3 original line; the P1 original line, the P2 original line, the P3 original line, the first original gap, and the second original gap are all rectangular. The sum of the areas of the first original gap and the second original gap is the first area. The line setting parameters also include the P1 original line size, the P2 original line size, and the P3 original line size; the dead zone line image includes the P1 line, the P2 line, the P3 line, the first gap between the P1 line and the P2 line, and the second gap between the P2 line and the P3 line.

[0089] S32. Determine a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the marking setting parameters.

[0090] The first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width.

[0091] S33, determining a first end point and a second end point according to the original marking size of P1 and the first correction parameter.

[0092] Specifically, refer to Figure 2 and Figure 8 , first draw a rectangle with a length of d1 and a width of a according to the original line size of P1 a×d1, that is, the P1 line. Set the two endpoints of the same long side in the P1 line P11 as the first endpoint Q1 and the second endpoint Q2 respectively. According to the first extension width L11 and the second extension width L12 in the first correction parameter, along the direction from the first endpoint Q1 to the first gap G11, the point with the first extension width L11 between the first endpoint Q1 and the first gap G11 is determined as the first end point O1 of the first gap G11, and the point with the second extension width L12 between the second endpoint Q2 and the first gap G11 is determined as the second end point O2 of the first gap G11. The area surrounded by the first endpoint Q1, the second endpoint Q2, the first end point O1 and the second end point O2 is the first gap G11.

[0093] Optional, reference Figure 2 and Figure 8 , according to the original P1 line size and the first correction parameter, determine the first termination point and the second termination point, including drawing a P1 line with the original P1 line size according to the original P1 line size; taking the side length of the P1 line close to the first original gap as the first reference line; the first reference line includes a first endpoint and a second endpoint; taking the first endpoint as the reference point, along the direction of the P1 line pointing to the first original gap, a point with a first extension width between the P1 line and the first endpoint is taken as the first termination point of the first gap; taking the second endpoint as the reference point, along the direction of the P1 line pointing to the first original gap, a point with a second extension width between the P1 line and the second endpoint is taken as the second termination point of the first gap.

[0094] Specifically, first, based on the original P1 line size a×d1, a rectangle with a length of d1 and a width of a is drawn, that is, the P1 line P11. The side length of the P1 line P11 close to the first original gap G10 is used as the first reference line l1, and the first reference line l1 includes a first endpoint Q1 and a second endpoint Q2. Then, taking the first endpoint Q1 as the reference point, along the direction X of the P1 line P11 pointing to the first original gap G10, a point with a first extension width L11 between the first endpoint Q1 is determined, and this point is used as the first termination point O1 of the first gap G11. Taking the second endpoint Q2 as the reference point, along the direction X of the P1 line P11 pointing to the first original gap G11, a point with a second extension width L12 between the second endpoint Q2 is determined, and this point is used as the second termination point of the first gap G11.

[0095] S34, determining a third end point and a fourth end point according to the first end point, the second end point, and the original line size of P2.

[0096] The original marking dimension of P2 includes the original length d1 of P2 and the original width a of P2.

[0097] Specifically, taking the first termination point O1 as the reference point, along the direction X pointing from the P1 line P11 to the first original gap G10, a point having the original width a of P2 between the first termination point O1 and the first termination point is determined, and the point is used as the third termination point O3 of the P2 line P21. Taking the second termination point O2 as the reference point, along the direction X pointing from the P1 line P11 to the first original gap G10, a point having the original width a of P2 between the second termination point O2 and the second termination point is determined, and the point is used as the third termination point O3 of the P2 line P21.

[0098] S35. Determine a fifth end point and a sixth end point according to the third end point, the fourth end point and the second correction parameter.

[0099] The second correction parameter includes a third extension width L21 and a fourth extension width L22.

[0100] Specifically, taking the third termination point O3 as the reference point, along the P1 line P11 pointing to the direction X of the first original gap G10, a point having a third extension width L21 with the third termination point O3 is determined, and the point is used as the fifth termination point O5 of the second gap G21. Taking the fourth termination point O4 as the reference point, along the P1 line P11 pointing to the direction X of the first original gap G10, a point having a fourth extension width L22 with the fourth termination point O4 is determined, and the point is used as the sixth termination point O6 of the second gap G21.

[0101] S36, determining the seventh and eighth end points according to the fifth and sixth end points and the original line size of P3.

[0102] The original marking dimension of P3 includes the original length d1 of P3 and the original width a of P3.

[0103] Specifically, taking the fifth termination point O5 as the reference point, along the direction X pointing from the P1 line P11 to the first original gap G10, a point having the original width a of P3 between the fifth termination point O5 and the fifth termination point O5 is determined, and the point is used as the seventh termination point O7 of the P3 line P31. Taking the sixth termination point O6 as the reference point, along the direction X pointing from the P1 line P11 to the first original gap G10, a point having the original width a of P3 between the sixth termination point O6 and the sixth termination point O6 is determined, and the point is used as the seventh termination point O7 of the P3 line P31.

[0104] S37, sequentially connecting the first termination point, the second termination point, the fourth termination point and the third termination point to form a P2 line.

[0105] Specifically, the distance between the first termination point O1 and the second termination point O2 is the width of the original P2 line, the distance between the third termination point O3 and the fourth termination point O4 is the width of the original P2 line, and the first termination point O1, the second termination point O2, the third termination point O3 and the fourth termination point O4 are connected in sequence. The area surrounded by the first termination point O1, the second termination point O2, the third termination point O3 and the fourth termination point O4 is the P2 line P21.

[0106] S38, sequentially connecting the fifth termination point, the sixth termination point, the eighth termination point and the seventh termination point to form a P3 line.

[0107] The sum of the areas of the first gap and the second gap is the second area, and the first area is greater than the second area.

[0108] Specifically, the distance between the fifth termination point O5 and the seventh termination point O7 is the width of the original P3 line, the distance between the sixth termination point O6 and the eighth termination point O8 is the width of the original P3 line, and the fifth termination point O5, the sixth termination point O6, the eighth termination point O8 and the seventh termination point O7 are connected in sequence. The area surrounded by the fifth termination point O5, the sixth termination point O6, the eighth termination point O8 and the seventh termination point O7 is the P3 line P31.

[0109] The technical solution of the embodiment of the present invention first determines the first and second termination points of the first gap according to the original line size of P1 and the first correction parameter. Taking the first and second termination points as reference points, the third and fourth termination points of the P2 line are determined according to the original line size of P2. Then, taking the third and fourth termination points as reference points, the fifth and sixth termination points of the second gap are determined according to the second correction parameter. Taking the fifth and sixth termination points as reference points, the seventh and eighth termination points of the P3 line are determined according to the original line size of P3. Finally, the first termination point, the second termination point, the fourth termination point and the third termination point are connected in sequence to form the P2 line. The fifth termination point, the sixth termination point, the eighth termination point and the seventh termination point are connected in sequence to form the P3 line. Thus, in the dead zone marking image determined according to the partial marking setting parameters, the first correction parameters and the second correction parameters, the area of ​​the P1 marking is equal to the original P1 marking, the area of ​​the P2 marking is equal to the original P2 marking, the area of ​​the P3 marking is equal to the original P3 marking, the area of ​​the first gap is smaller than the area of ​​the first original gap, and the area of ​​the second gap is smaller than the area of ​​the second original gap, so that the dead zone area of ​​the photovoltaic cell after correction is smaller than the dead zone area of ​​the photovoltaic cell before correction, so as to reduce the internal resistance caused by the structure located in the dead zone, reduce the internal resistance and operating temperature of the photovoltaic cell, and improve the working stability and working efficiency of the photovoltaic cell.

[0110] Fig. 9 A schematic diagram of a photovoltaic cell scribing design device provided by an embodiment of the present invention is shown in FIG. Fig. 9 As shown, the scribing design device for photovoltaic cells includes:

[0111] The marking setting parameter acquisition module 10 is used to obtain the marking setting parameters of the photovoltaic cell; the marking setting parameters at least include a first original gap width between the P1 original marking line and the P2 original marking line, and a second original gap width between the P2 original marking line and the P3 original marking line; the P1 original marking line, the P2 original marking line, the P3 original marking line, the first original gap and the second original gap are all rectangular.

[0112] The correction parameter determination module 20 is used to determine the first correction parameter of the first original gap and the second correction parameter of the second original gap according to the marking setting parameters; the first correction parameter includes the first extension width and the second extension width, and the second correction parameter includes the third extension width and the fourth extension width.

[0113] The marking image determination module 30 is used to determine the dead zone marking image according to the partial marking setting parameters, the first correction parameters and the second correction parameters; the marking setting parameters also include the original marking size of P1, the original marking size of P2 and the original marking size of P3; the dead zone marking image includes the P1 marking, the P2 marking, the P3 marking, the first gap between the P1 marking and the P2 marking, and the second gap between the P2 marking and the P3 marking; wherein the sum of the areas of the first original gap and the second original gap is the first area, the sum of the areas of the first gap and the second gap is the second area, and the first area is greater than the second area.

[0114] The photovoltaic cell scribing design device provided in the embodiment of the present invention can execute the photovoltaic cell scribing design method provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method. The similarities can be referred to the above description.

[0115] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, combinations and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A method for designing a line for a photovoltaic cell, characterized in that: include: Acquire the scribing setting parameters of the photovoltaic cell; the scribing setting parameters at least include a first original gap width between the P1 original scribing line and the P2 original scribing line, and a second original gap width between the P2 original scribing line and the P3 original scribing line; the P1 original scribing line, the P2 original scribing line, the P3 original scribing line, the first original gap, and the second original gap are all rectangular; Determine, according to the scribing setting parameters, a first correction parameter of the first original gap and a second correction parameter of the second original gap; the first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width; Determine a dead zone line image according to part of the line setting parameters, the first correction parameter and the second correction parameter; the line setting parameters further include a P1 original line size, a P2 original line size and a P3 original line size; the dead zone line image includes a P1 line, a P2 line, a P3 line, a first gap between the P1 line and the P2 line, and a second gap between the P2 line and the P3 line; The sum of the areas of the first original gap and the second original gap is a first area, the sum of the areas of the first gap and the second gap is a second area, and the first area is greater than the second area.

2. The marking line design method according to claim 1, characterized in that: Determining a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the scribing setting parameter includes: Determining whether the first original gap width and the second original gap width are both equal to zero; If not, determining whether the first original gap width is greater than zero; If yes, determining the first correction parameter according to the first original gap width; The second correction parameter is determined according to the line setting parameter.

3. The marking line design method according to claim 2, characterized in that: Determining the first correction parameter according to the first original gap width includes: The first extension width and the second extension width of the first gap are determined according to the first original gap width; the first extension width and / or the second extension width are smaller than the first original gap width.

4. The scribing design method according to claim 2, characterized in that: If the width of the first original gap is equal to zero, the first original gap width is used as the first correction parameter.

5. The scribing line design method according to claim 2, characterized in that: Determining the second correction parameter according to the line setting parameter includes: Determining whether the second original gap width is greater than zero; If so, the second correction parameter is determined according to the second original gap width.

6. The scribing line design method according to claim 5, characterized in that: Determining the second correction parameter according to the second original gap width includes: The third extension width and the fourth extension width of the second gap are determined according to the second original gap width; the third extension width and / or the fourth extension width is smaller than the second original gap width.

7. The scribing line design method according to claim 5, characterized in that: If the second original gap width is equal to zero, the second original gap width is used as the second correction parameter.

8. The scribing line design method according to claim 1, characterized in that: Determining a dead zone marking image according to part of the marking setting parameters, the first correction parameter, and the second correction parameter includes: Determine a first end point and a second end point according to the original marking size of P1 and the first correction parameter; Determine a third termination point and a fourth termination point according to the first termination point, the second termination point, and the original stroke size of P2; Determining a fifth end point and a sixth end point according to the third end point, the fourth end point and the second correction parameter; Determine a seventh termination point and an eighth termination point according to the fifth termination point, the sixth termination point and the original stroke size of P3; sequentially connecting the first termination point, the second termination point, the fourth termination point and the third termination point to form the P2 line; The fifth termination point, the sixth termination point, the eighth termination point and the seventh termination point are sequentially connected to form the P3 line.

9. The scribing line design method according to claim 8, characterized in that: Determining a first end point and a second end point according to the original line size of P1 and the first correction parameter includes: According to the P1 original marking line size, marking the P1 marking line having the P1 original marking line size; The side length of the P1 line close to the first original gap is used as a first reference line; the first reference line includes a first endpoint and a second endpoint; Taking the first endpoint as a reference point, along the P1 line in the direction of the first original gap, taking a point with the first extension width between the first endpoint and the first gap as a first end point of the first gap; The second endpoint is taken as the reference point, and a point with the second extension width between the second endpoint and the second endpoint in a direction pointing to the first original gap along the P1 line is taken as a second termination point of the first gap.

10. A photovoltaic cell scribing design device, characterized in that: A scribing setting parameter acquisition module, used to acquire scribing setting parameters of the photovoltaic cell; the scribing setting parameters at least include a first original gap width between the P1 original scribing line and the P2 original scribing line, and a second original gap width between the P2 original scribing line and the P3 original scribing line; the P1 original scribing line, the P2 original scribing line, the P3 original scribing line, the first original gap, and the second original gap are all rectangular; a correction parameter determination module, configured to determine a first correction parameter of the first original gap and a second correction parameter of the second original gap according to the scribing setting parameter; the first correction parameter includes a first extension width and a second extension width, and the second correction parameter includes a third extension width and a fourth extension width; A marking image determination module is used to determine a dead zone marking image according to part of the marking setting parameters, the first correction parameter and the second correction parameter; the marking setting parameters also include P1 original marking size, P2 original marking size and P3 original marking size; the dead zone marking image includes P1 marking, P2 marking, P3 marking, a first gap between the P1 marking and the P2 marking, and a second gap between the P2 marking and the P3 marking; wherein the sum of the areas of the first original gap and the second original gap is a first area, the sum of the areas of the first gap and the second gap is a second area, and the first area is greater than the second area.

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