Light emitting diode, method of manufacture and LED device

Abstract

The application provides a light emitting diode, a preparation method and an LED device. The light emitting diode comprises a substrate and an epitaxial structure. The epitaxial structure comprises an N-type semiconductor layer and a P-type platform. The P-type platform comprises a multi-quantum well layer and a P-type semiconductor layer. The N-type semiconductor layer is provided with a first current blocking part. The P-type semiconductor layer is provided with a second current blocking part, a third current blocking part and a transparent conductive part. A plurality of first adhesive metal parts are arranged on the first current blocking part. A plurality of second adhesive metal parts are arranged between the second current blocking part and the third current blocking part. A first reflective metal part is arranged on the plurality of first adhesive metal parts. A second reflective metal part is arranged on the plurality of second adhesive metal parts. By arranging the first adhesive metal part, the second adhesive metal part, the first reflective metal part and the second reflective metal part, the metal structure has adhesive force, and the reflection effect on light is enhanced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor technology, in particular to a light emitting diode, a preparation method and an LED device. BACKGROUND

[0002] The light emitting diode is a device for converting electrical energy into light energy, wherein the high and low of the light emitting efficiency is mainly affected by the internal quantum efficiency and the external quantum efficiency. The external quantum efficiency is affected by the chip structure, for example, in the chip structure, the metal structure of the electrode cannot transmit light and has a certain absorption effect on light, which will affect the light output.

[0003] In the existing light emitting diode, in order to ensure the adhesion of the electrode, chromium metal is usually used to improve the wire bonding ability of the normal LED chip and serve as the ohmic contact layer of the N-type gallium nitride.

[0004] However, the reflectivity of chromium metal is low, the absorption coefficient of light is large, and it is easy to have a negative impact on the overall brightness of the chip. If a high-reflectivity metal is used, the adhesion is insufficient. The adhesion of the metal electrode structure and the brightness of the chip are difficult to achieve. SUMMARY

[0005] In view of the defects of the prior art, the purpose of the present application is to provide a light emitting diode, a preparation method and an LED device, which aims to solve the problem that the adhesion of the metal structure of the light emitting diode and the brightness of the chip are difficult to achieve in the prior art.

[0006] In order to achieve the above-mentioned purpose, the present application is realized by the following technical scheme:

[0007] A light emitting diode comprises a substrate and an initial epitaxial structure arranged from bottom to top, the initial epitaxial structure comprises an N-type semiconductor layer and a P-type mesa arranged from bottom to top, the P-type mesa has a projection area on a horizontal plane smaller than that of the N-type semiconductor layer, the P-type mesa comprises a multiple quantum well layer and a P-type semiconductor layer arranged from bottom to top, one side of the N-type semiconductor layer towards the P-type mesa is provided with a first current blocking part, one side of the P-type semiconductor layer away from the multiple quantum well layer is provided with a second current blocking part, a third current blocking part and a transparent conductive part, the transparent conductive part is connected to the second current blocking part, a plurality of first adhesive metal parts are arranged on the first current blocking part, the second current blocking part comprises a blocking ring, the blocking ring encloses a placement area, the third current blocking part is located in the placement area, a plurality of second adhesive metal parts are arranged in the placement area, a plurality of the second adhesive metal parts are located between the blocking ring and the third current blocking part, a same first reflective metal part is arranged on a plurality of the first adhesive metal parts, a same second reflective metal part is arranged on a plurality of the second adhesive metal parts, the second reflective metal part is connected to the transparent conductive part to form a final epitaxial structure, and a protective layer is arranged on a side of the final epitaxial structure away from the substrate.

[0008] Compared with the prior art, the light emitting diode has the beneficial effects that: by arranging a plurality of first adhesive metal parts and a plurality of second adhesive metal parts, and matching the first reflective metal part and the second reflective metal part respectively, the metal structure of the electrode of the light emitting diode is formed, the metal structure has adhesion, the adhesion between the metal structure and the epitaxial structure is strong, the reflection effect of light is enhanced by the first reflective metal part and the second reflective metal part, the absorption of light is reduced, the first current blocking part, the second current blocking part and the third current blocking part are arranged to avoid the injected current from flowing directly below the electrode, the range of current flow is expanded, the current blocking effect is prevented, and the luminous intensity is further improved.

[0009] Further, the first reflective metal part comprises a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, the first reflective metal strip is connected to the N-type semiconductor layer, and one end of the first reflective metal sheet towards the N-type semiconductor layer is partially connected to the first current blocking part.

[0010] Further, the second reflective metal part comprises a second reflective metal sheet and a plurality of second reflective metal strips connected to the second reflective metal sheet, and the second current blocking part further comprises a plurality of blocking strips, one side of the blocking strips away from the P-type mesa is connected to the second reflective metal strip, and one end of the second reflective metal sheet towards the P-type mesa is partially connected to the third current blocking part.

[0011] Further, a first groove and a second groove are arranged on the protective layer, the first groove and the second groove both penetrate the protective layer, the first groove corresponds to the first reflective metal part in position, and the second groove corresponds to the second reflective metal part in position.

[0012] In another aspect, the embodiment of the present application further provides a preparation method of a light emitting diode, which is used for preparing the light emitting diode in the above technical solution, and comprises the following steps:

[0013] A substrate is provided, and an N-type semiconductor layer, a multi-quantum well layer and a P-type semiconductor layer are sequentially deposited on the substrate;

[0014] The multi-quantum well layer and the P-type semiconductor layer are etched to expose part of the N-type semiconductor layer, so as to form a P-type mesa, and the N-type semiconductor layer and the P-type mesa form an initial epitaxial structure;

[0015] A first current blocking part is prepared on the N-type semiconductor layer, a second current blocking part and a third current blocking part are prepared on the P-type semiconductor layer, the second current blocking part comprises a blocking ring, the blocking ring encloses a placement area, and the third current blocking part is located in the placement area;

[0016] A plurality of first adhesive metal parts are deposited on the first current blocking part, a plurality of second adhesive metal parts are deposited between the blocking ring and the third current blocking part, and a transparent conductive part is deposited on the P-type mesa, and the transparent conductive part is connected to the second current blocking part;

[0017] A first reflective metal part is deposited on the plurality of first adhesive metal parts, and a second reflective metal part is deposited on the plurality of second adhesive metal parts and the transparent conductive part, so as to form a final epitaxial structure;

[0018] A protective layer is deposited on a side of the final epitaxial structure opposite to the substrate, so as to form a light emitting diode.

[0019] Further, the step of preparing the first current blocking part on the N-type semiconductor layer, and preparing the second current blocking part and the third current blocking part on the P-type semiconductor layer, wherein the second current blocking part comprises a blocking ring, the blocking ring encloses a placement area, and the third current blocking part is located in the placement area, comprises the following steps:

[0020] The initial epitaxial structure is cleaned, and an insulating layer is deposited on the initial epitaxial structure;

[0021] Gluing, exposing and developing are performed on the insulating layer to form a first mask pattern on the region corresponding to the N-type semiconductor layer, a second mask pattern and a third mask pattern on the region corresponding to the P-type semiconductor layer, and part of the insulating layer is removed by etching to form a first current blocking part, a second current blocking part and a third current blocking part respectively.

[0022] Further, after the step of depositing a first reflective metal part on the first adhesion metal parts, and depositing a second reflective metal part on the second adhesion metal parts and the transparent conductive part to form a final epitaxial structure, the method further comprises:

[0023] Maskless exposure is performed on the first reflective metal part and the second reflective metal part from the direction of the substrate to the final epitaxial structure by using a light source with a wavelength of 470nm-520nm.

[0024] Exposure is performed on the first reflective metal part and the second reflective metal part from the direction of the final epitaxial structure to the substrate.

[0025] In another aspect, the embodiment of the present application also provides an LED device, which comprises the light emitting diode described in the technical solutions. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a structure schematic diagram of the light emitting diode in the first embodiment of the present application;

[0027] Figure 2 It is a partial structure top view schematic diagram of the light emitting diode in the first embodiment of the present application;

[0028] Figure 3 It is a flow chart of the preparation method of the light emitting diode in the second embodiment of the present application;

[0029] Explanation of main element symbols:

[0030] Substrate 100 N-type semiconductor layer 110 P-type mesa 120 First current blocking portion 201 Second current blocking portion 202 Third current blocking portion 203 Transparent conductive portion 204 First adhesion metal portion 211 Second adhesion metal portion 212 First reflective metal portion 221 Second reflective metal portion 222 Protective layer 300

[0031] The following specific embodiments will further illustrate the present application in combination with the above-mentioned drawings. DETAILED DESCRIPTION

[0032] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the related drawings. The drawings show several embodiments of the present application. However, the present application can be realized in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0033] It is to be understood that where an element such as a layer, region or substrate is described as being "on" another element, it can be directly on the other element or intervening elements can also be present. Where an element such as a layer, region or substrate is described as being "connected" to another element, it can be directly connected to the other element or intervening elements can also be present. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0035] Referring to Figure 1 The light emitting diode in the first embodiment of the present application comprises a substrate 100 and an initial epitaxial structure arranged from bottom to top, the initial epitaxial structure comprises an N-type semiconductor layer 110 and a P-type platform 120 arranged from bottom to top, the P-type platform 120 has a projection area on a horizontal plane smaller than that of the N-type semiconductor layer 110, and the P-type platform 120 comprises a multiple quantum well layer and a P-type semiconductor layer arranged from bottom to top. Preferably, the N-type semiconductor layer 110 and the P-type semiconductor layer are both made of gallium nitride, the substrate 100 is made of sapphire, and a photoresist is coated on the semiconductor epitaxial layer, followed by exposure and development to form a photoetching pattern, and then part of the P-type semiconductor layer and the multiple quantum well layer are removed by dry etching to expose the N-type semiconductor layer 110. Further, the gas used in dry etching is selected from Ar, Cl2, BCl2, CF4 and CCl4, and after etching, the photoresist is removed and the wafer is cleaned for subsequent fabrication.

[0036] The N-type semiconductor layer 110 is provided with a first current blocking part 201 on the side facing the P-type platform, the P-type semiconductor layer is provided with a second current blocking part 202, a third current blocking part 203 and a transparent conductive part 204 on the side facing away from the multiple quantum well layer, the transparent conductive part 204 is connected to the second current blocking part 202, the first current blocking part 201 is provided with a plurality of first adhesive metal parts 211, the second current blocking part 202 comprises a blocking ring and a plurality of blocking strips, the blocking ring encloses a placement area, the third current blocking part 203 is located in the placement area, and a plurality of second adhesive metal parts 212 are arranged in the placement area between the blocking ring and the third current blocking part 203. Preferably, referring to Figure 2The blocking ring is located at one end of the initial epitaxial structure, the blocking ring connects two blocking bars, both of which extend from the blocking ring to the end of the initial epitaxial structure away from the blocking ring. The first current blocking part 201 is in the shape of D, and is located at the end of the initial epitaxial structure away from the blocking ring. The first current blocking part 201, the second current blocking part 202 and the third current blocking part 203 are made of the same insulating material. Specifically, the insulating material is deposited on the cleaned initial epitaxial structure to form an insulating layer, the insulating layer is coated with glue, and the exposure and development process is performed to make a mask pattern, and then the excess insulating layer is removed by etching, and the glue is removed, thereby obtaining the required current blocking part. The transparent conductive part 204 is made of transparent conductive material, such as ITO and IZO. In this embodiment, ITO material is specifically selected. Further, the transparent conductive part 204 is prepared by first depositing transparent conductive material on the side of the P-type table 120 away from the N-type semiconductor layer to form a transparent conductive layer. The transparent conductive layer is coated with glue, and the exposure and development process is performed to make a mask pattern. The excess transparent conductive layer is removed by wet etching to expose part of the second current blocking layer and the third current blocking part 203. After the glue is removed, the transparent conductive part 204 is formed.

[0037] Preferably, the first adhesion metal parts 211 are arranged at intervals, the second adhesion metal parts 212 are arranged at intervals, and gaps are left between adjacent second adhesion metal parts 212. When the high-reflectivity metal part is subsequently made, the high-reflectivity metal part and the second adhesion metal part 212 can both partially contact the P-type table 120. Understandably, the first current blocking part 201, the second current blocking part 202 and the third current blocking part 203 can avoid the injected current flowing directly to the electrode below, and can expand the range of current flow. Through specific shape design, the current blocking effect is further prevented, which is beneficial to improve the luminous intensity, i.e. to improve the light efficiency of the light-emitting diode. Selective deposition of high-adhesion metal to form a plurality of first adhesion metal parts 211 and a plurality of second adhesion metal parts 212 arranged at intervals is beneficial to improve the adhesion of the metal electrode structure and improve the connection strength between the metal electrode and the epitaxial structure, while saving materials and optimizing the current range.

[0038] A same first reflective metal part 221 is arranged on the first adhesive metal parts 211, a same second reflective metal part 222 is arranged on the second adhesive metal parts 212, the second reflective metal part 222 is connected to the transparent conductive part 204 to form a final epitaxial structure, the first reflective metal part 221 comprises a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, the first reflective metal strip is connected to the N-type semiconductor layer 110, one end of the first reflective metal sheet is connected to the first current blocking part 201, the second reflective metal part 222 comprises a second reflective metal sheet and a plurality of second reflective metal strips connected to the second reflective metal sheet, one side of the blocking strip away from the P-type table 120 is connected to the second reflective metal strip, one end of the second reflective metal sheet is connected to the third current blocking part 203, a protective layer 300 is arranged on a side of the final epitaxial structure away from the substrate, a first groove and a second groove are arranged on the protective layer 300, the first groove and the second groove both penetrate the protective layer 300, the first groove corresponds to the first reflective metal part 221 in position, and the second groove corresponds to the second reflective metal part 222 in position. Preferably, please refer to Figure 2The first reflective metal strip extends from the first reflective metal sheet to the second reflective metal sheet, the second reflective metal sheet connects two second reflective metal strips, the second reflective metal strips are adapted in shape and position to the barrier strips, and the first reflective metal strip is located between the two second reflective metal strips. Further, the high reflective metal is patterned to improve the adhesion between the high reflective metal and the high adhesion metal. The light source is provided below the substrate 100 in a self-alignment manner, and the wavelength of the light source is 500 nm. Since the high adhesion metal has a shielding effect on light, when the light is incident from below to above, the first adhesion metal part 211 has a shielding effect on the first reflective metal part 221, and the second adhesion metal part 212 has a shielding effect on the second reflective metal part 222. Maskless exposure can be directly performed, which is more efficient. After the bottom exposure is completed, light is provided from above to below, that is, light is incident from the top surface of the first reflective metal part 221 and the second reflective metal part 222. Specifically, photoresist is used to cover the epitaxial structure and the transparent conductive part 204, and a window is left at the positions of the first reflective metal part 221 and the second reflective metal part 222 for exposure. The high reflective metal is patterned by double-sided exposure, further improving the adhesion inside the metal electrode structure. The protective layer 300 is made of an insulating material. After the insulating material is deposited, a protective insulating layer is formed. The protective insulating layer is coated, exposed, and developed to form a mask pattern, and the protective insulating layer above the metal structure is removed by etching to form the protective layer 300. It can be understood that chromium metal is usually used as the adhesion metal of N-type gallium nitride and P-type gallium nitride in the chip of a conventional light-emitting diode. However, the reflectivity of chromium metal is low, and the light absorption coefficient is large, which will negatively affect the brightness of the light-emitting diode. By using the first reflective metal part 221 and the second reflective metal part 222 and setting them on the first adhesion metal part 211 and the second adhesion metal part 212, the problem of strong adhesion but poor reflection of the conventional metal electrode structure can be solved, and high adhesion and high reflectivity are achieved.

[0039] Please refer to Figure 3 The second embodiment of the present application provides a preparation method of a light-emitting diode, which is used for preparing the light-emitting diode described in the above technical solutions. The preparation method of the light-emitting diode comprises the following steps:

[0040] S10: providing a substrate, and sequentially depositing an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer on the substrate;

[0041] Preferably, the substrate is a sapphire substrate, the N-type semiconductor layer is N-type gallium nitride, and the P-type semiconductor layer is P-type gallium nitride.

[0042] S20: etching the multi-quantum well layer and the P-type semiconductor layer to expose part of the N-type semiconductor layer to form a P-type mesa, and the N-type semiconductor layer and the P-type mesa form an initial epitaxial structure;

[0043] The dry etching is performed, and dry etching gases are selected from Ar, Cl2, BCl2, CF4, and CCl4. Specifically, a photoetching pattern is made by coating a glue on the epitaxial layer and performing development and exposure, and then the N-type semiconductor layer is exposed by etching according to the pattern.

[0044] S30: preparing a first current blocking part on the N-type semiconductor layer, preparing a second current blocking part and a third current blocking part on the P-type semiconductor layer, the second current blocking part including a blocking ring, the blocking ring enclosing a placement area, and the third current blocking part being located in the placement area;

[0045] The shapes of the first current blocking part, the second current blocking part, and the third current blocking part are obtained by etching after making a mask pattern, and the third current blocking part has an annular gap with the second current blocking part.

[0046] Specifically, the step S30 includes:

[0047] S310: cleaning the initial epitaxial structure, and depositing an insulating layer on the initial epitaxial structure;

[0048] The initial epitaxial structure is degummed and cleaned to perform subsequent deposition operation. The material of the insulating layer is selected from oxides, and the thickness is 10 nm. The current injected into the metal electrode can be prevented from directly flowing under the P electrode, the current blocking effect is avoided, and the luminous intensity is improved.

[0049] S320: coating glue, exposing, and developing the insulating layer, making a first mask pattern on a region corresponding to the N-type semiconductor layer, making a second mask pattern and a third mask pattern on regions corresponding to the P-type semiconductor layer, and removing part of the insulating layer by etching to form a first current blocking part, a second current blocking part, and a third current blocking part, respectively.

[0050] It can be understood that the shapes of the first current blocking part, the second current blocking part, and the third current blocking part are designed and customized according to the required shape of the metal electrode, and cooperate with the metal electrode to make the current diffusion effect better, which is beneficial to prevent the current blocking phenomenon.

[0051] S40: depositing a plurality of first adhesive metal parts on the first current blocking part, depositing a plurality of second adhesive metal parts between the blocking ring and the third current blocking part, and depositing a transparent conductive part on the P-type mesa, the transparent conductive part being connected to the second current blocking part.

[0052] Preferably, the transparent conductive part is made of ITO. After depositing the ITO material layer, a photoetching pattern is made by coating, developing and exposing. Then, the excess ITO material is removed by wet etching to form the transparent conductive part. The shape of the transparent conductive part is similar to the P-type platform, and the projection area of the transparent conductive part on the horizontal plane is smaller than the projection area of the P-type platform on the horizontal plane. The transparent conductive part does not block the light, which is beneficial to ensure the light efficiency. Further, the first adhesive metal parts are arranged at intervals, and the second adhesive metal parts are arranged at intervals. Understandably, the use of high-adhesion metal is reduced, but the number of adhesive points is still ensured. The high-adhesion metal material is saved while ensuring the high-adhesion between the metal and gallium nitride, and the absorption of high-adhesion metal light is reduced.

[0053] S50: depositing a first reflective metal part on the first adhesive metal parts, and depositing a second reflective metal part on the second adhesive metal parts and the transparent conductive part to form a final epitaxial structure.

[0054] Understandably, the first reflective metal part and the second reflective metal part have a small light absorption coefficient for the light inside the light-emitting diode, and reflect the light, which can improve the light efficiency and brightness of the light-emitting diode.

[0055] Specifically, the step S50 further includes:

[0056] S510: using a light source with a wavelength of 470nm-520nm to perform maskless exposure on the first reflective metal part and the second reflective metal part from the direction of the substrate to the final epitaxial structure.

[0057] Preferably, a 500nm wavelength light source is used. Since the first adhesive metal part and the second adhesive metal part have a shielding effect on light and are located below the first reflective metal part and the second reflective metal part, when the direction of the light is from the substrate to the final epitaxial structure, i.e. incident from bottom to top, the first adhesive metal part and the second adhesive metal part act as a natural mask, and no additional mask needs to be made.

[0058] S520: exposing the first reflective metal part and the second reflective metal part from the direction of the final epitaxial structure to the substrate.

[0059] In the upper surface of the final epitaxial structure is covered with photoresist, only the corresponding position of the first reflective metal part and the second reflective metal part is left out of the window, and the window is exposed, that is, the patterning of the high reflective metal is completed. Patterning the first reflective metal part and the second reflective metal part is beneficial to prevent the adhesion under the high reflective electrode from being reduced due to the accuracy of the alignment part when the high reflective electrode is manufactured.

[0060] S60: depositing a protective layer on the side of the final epitaxial structure away from the substrate to form a light emitting diode.

[0061] Preferably, a first groove and a second groove are formed in the protective layer, the first groove and the second groove both penetrate the protective layer, the first groove corresponds to the position of the first reflective metal part, and the second groove corresponds to the position of the second reflective metal part. Specifically, a mask pattern is made by gluing, exposing and developing, and part of the insulating material of the protective layer is removed by etching, and then the glue is removed to prevent the protective layer from covering the metal electrode.

[0062] In some embodiments, the present application also provides an LED device comprising the light emitting diode as described in the above embodiments.

[0063] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" and the like means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0064] The above-described embodiments only express several implementation manners of the present application, which are described in a more specific and detailed manner, but cannot be understood as a limitation on the patent scope of the present application. It should be noted that, for those skilled in the art, several modifications and improvements can be made without departing from the concept of the present application, which are all within the protection scope of the present application. Therefore, the protection scope of the present application patent should be subject to the appended claims.

Claims

1. A light emitting diode, characterized in that: The invention comprises a substrate and an initial epitaxial structure arranged from bottom to top, wherein the initial epitaxial structure comprises an N-type semiconductor layer and a P-type platform arranged from bottom to top, wherein the projected area of ​​the P-type platform on the horizontal plane is smaller than the projected area of ​​the N-type semiconductor layer on the horizontal plane, wherein the P-type platform comprises a multi-quantum well layer and a P-type semiconductor layer arranged from bottom to top, wherein a first current blocking portion is provided on a side of the N-type semiconductor layer facing the P-type platform, and a second current blocking portion, a third current blocking portion and a transparent conductive portion are provided on a side of the P-type semiconductor layer facing away from the multi-quantum well layer, wherein the transparent conductive portion is connected to the second current blocking portion, and a first current blocking portion is provided on the first current blocking portion. Several first adhesive metal parts, the second current blocking part includes a blocking ring, the blocking ring encloses a placement area, the third current blocking part is located in the placement area, several second adhesive metal parts are arranged in the placement area, several second adhesive metal parts are located between the blocking ring and the third current blocking part, the same first reflective metal part is arranged on several first adhesive metal parts, the same second reflective metal part is arranged on several second adhesive metal parts, the second reflective metal part is connected to the transparent conductive part to form a final epitaxial structure, and a protective layer is arranged on the side of the final epitaxial structure facing away from the substrate.

2. The light emitting diode according to claim 1, characterized in that The first reflective metal portion includes a first reflective metal sheet and a first reflective metal strip connected to the first reflective metal sheet, the first reflective metal strip is connected to the N-type semiconductor layer, and one end of the first reflective metal sheet facing the N-type semiconductor layer is connected to the first current blocking portion.

3. The light emitting diode according to claim 1, characterized in that The second reflective metal part includes a second reflective metal sheet and several second reflective metal strips connected to the second reflective metal sheet. The second current blocking part also includes several blocking strips. The side of the blocking strip facing away from the P-type stage is connected to the second reflective metal strip. The end of the second reflective metal sheet facing the P-type stage is connected to the third current blocking part.

4. The light emitting diode according to claim 1, characterized in that A first groove body and a second groove body are provided on the protective layer. Both the first groove body and the second groove body pass through the protective layer. The first groove body corresponds to the first reflective metal portion, and the second groove body corresponds to the second reflective metal portion.

5. A method for preparing a light emitting diode, for preparing the light emitting diode according to any one of claims 1 to 4, characterized in that: The method for preparing the light emitting diode comprises the following steps: Providing a substrate, and sequentially depositing an N-type semiconductor layer, a multi-quantum well layer, and a P-type semiconductor layer on the substrate; Etching the multi-quantum well layer and the P-type semiconductor layer to expose a portion of the N-type semiconductor layer to form a P-type platform, wherein the N-type semiconductor layer and the P-type platform form an initial epitaxial structure; A first current blocking portion is formed on the N-type semiconductor layer, and a second current blocking portion and a third current blocking portion are formed on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area; Depositing a plurality of first adhesion metal portions on the first current blocking portion, depositing a plurality of second adhesion metal portions between the blocking ring and the third current blocking portion, and depositing a transparent conductive portion on the P-type platform, wherein the transparent conductive portion is connected to the second current blocking portion; Depositing a first reflective metal portion on a plurality of the first adhesive metal portions, and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion to form a final epitaxial structure; A protection layer is deposited on the side of the final epitaxial structure facing away from the substrate to form a light emitting diode.

6. The method for preparing a light emitting diode according to claim 5, wherein: The step of forming a first current blocking portion on the N-type semiconductor layer, forming a second current blocking portion and a third current blocking portion on the P-type semiconductor layer, wherein the second current blocking portion includes a blocking ring, the blocking ring encloses a placement area, and the third current blocking portion is located in the placement area comprises: Cleaning the initial epitaxial structure, and depositing an insulating layer on the initial epitaxial structure; The insulating layer is coated with glue, exposed and developed, a first mask pattern is made on the area corresponding to the N-type semiconductor layer, a second mask pattern and a third mask pattern are made on the area corresponding to the P-type semiconductor layer, and a portion of the insulating layer is removed by etching to form a first current blocking portion, a second current blocking portion and a third current blocking portion, respectively.

7. The method for preparing a light emitting diode according to claim 5, wherein: After the step of depositing a first reflective metal portion on a plurality of the first adhesive metal portions and depositing a second reflective metal portion on a plurality of the second adhesive metal portions and the transparent conductive portion to form a final epitaxial structure, the method further includes: Using a light source with a wavelength of 470 nm to 520 nm, performing maskless exposure on the first reflective metal portion and the second reflective metal portion from the substrate toward the final epitaxial structure; The first reflective metal portion and the second reflective metal portion are exposed from the final epitaxial structure toward the substrate.

8. An LED device, characterized in that: The light emitting diode comprises the light emitting diode according to any one of claims 1 to 4.

Images