Tandem perovskite-crystalline silicon laminated solar cell and preparation method and application thereof

Abstract

The invention provides a tandem perovskite-crystalline silicon laminated solar cell and a preparation method and application thereof. The tandem perovskite-crystalline silicon laminated solar cell comprises a crystalline silicon bottom cell and a perovskite top cell which are laminated, the perovskite top cell comprises a transparent substrate, a first transparent electrode layer, a first charge transport layer, a perovskite absorption layer, a second charge transport layer, a second transparent electrode layer and a top electrode grid line; a plurality of series grid lines are arranged on the surface of one side, close to the perovskite top cell, of the crystalline silicon bottom cell at intervals; the transparent substrate is a discontinuous substrate, and a discontinuous region of the discontinuous substrate is used for embedding a series grid line of the crystalline silicon bottom battery, so that the series grid line and the first transparent electrode layer are in ohmic contact. According to the invention, the perovskite top cell and the crystal silicon bottom cell which are independently prepared are connected in series by virtue of the series grid lines, so that the cell performance and the production efficiency can be remarkably improved.

Description

Technical Field

[0001] The present invention belongs to the field of photovoltaic technology, and specifically relates to a series perovskite-crystalline silicon stacked solar cell and a preparation method and application thereof. Background Art

[0002] Currently, perovskite-crystalline silicon two-terminal stacked solar cells are prepared by directly placing perovskite top cells on crystalline silicon cells, and the perovskite solar cell absorption layer is mainly prepared by solution coating. However, due to the pyramid protrusions on the velvet surface of crystalline silicon, the slit coating process is difficult to control to obtain a continuous perovskite absorption layer with good coverage of the velvet surface, resulting in poor quality of the perovskite absorption layer and poor battery performance.

[0003] In addition, the preparation of the absorption layer of the perovskite-crystalline silicon two-terminal stacked solar cell also includes the following two methods: the first is to use the full thermal evaporation method to deposit the perovskite absorption layer, and the second is to use a two-step method, that is, first use thermal evaporation to deposit the lead iodide precursor layer, and then slit-coat the organic salt reaction to solidify and crystallize. However, the above methods are not only complex in process, but also have high equipment costs, which is not conducive to industrial application.

[0004] Therefore, how to obtain a high-quality perovskite absorption layer by independently preparing perovskite top cells and crystalline silicon bottom cells and connecting them in series, and then obtain high-performance stacked solar cells, is a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a series perovskite-crystalline silicon tandem solar cell and its preparation method and application. The present invention uses a series grid line to connect the independently prepared perovskite top cell and the crystalline silicon bottom cell in series, achieving good contact, which can not only significantly improve the photoelectric performance of the tandem solar cell, but also greatly improve the production efficiency, and has good development potential.

[0006] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a tandem perovskite-crystalline silicon stacked solar cell, comprising a stacked crystalline silicon bottom cell and a perovskite top cell;

[0008] The perovskite top cell includes, in sequence along a direction away from the crystalline silicon bottom cell, a transparent substrate, a first transparent electrode layer, a first charge transport layer, a perovskite absorption layer, a second charge transport layer, a second transparent electrode layer and a top electrode grid line;

[0009] A plurality of series-connected gate lines are arranged at intervals on a surface of the crystalline silicon bottom cell on one side close to the perovskite top cell;

[0010] The transparent substrate is a discontinuous substrate, and the discontinuous area of ​​the discontinuous substrate is used to embed the series gate line of the crystalline silicon bottom cell, so that the series gate line and the first transparent electrode layer achieve ohmic contact.

[0011] The present invention uses series grid lines to connect independently prepared perovskite top cells and crystalline silicon bottom cells in series, achieving good contact. This can not only significantly improve the photoelectric performance of the stacked solar cells, but also greatly improve production efficiency, and has good development potential.

[0012] Preferably, the sizes of the crystalline silicon bottom cell and the perovskite top cell are consistent.

[0013] Preferably, the transparent substrate includes any one of PET (polyethylene terephthalate), PVDF (polyvinylidene fluoride), ETFE (ethylene-tetrafluoroethylene copolymer), PI (polyimide), POE (polyolefin elastomer), EVA (ethylene vinyl acetate), EPE (EVA-POE-EVA) or glass, or a combination of at least two of them.

[0014] Preferably, the transparent substrate has a thickness of 10-2000 μm, for example, 10 μm, 50 μm, 100 μm, 200 μm, 500 μm, 1000 μm, 1500 μm or 2000 μm.

[0015] Preferably, the width of the discontinuous region of the transparent substrate is greater than or equal to the width of the series gate line.

[0016] Preferably, the thickness of the transparent substrate is the same as the height of the series gate lines.

[0017] Preferably, the material of the series gate lines includes a conductive metal element or a conductive alloy.

[0018] Preferably, the materials of the first transparent electrode layer and the second transparent electrode layer independently include any one of FTO (fluorine-doped tin oxide), ITO (tin-doped indium oxide), IZO (zinc-doped indium oxide), AZO (aluminum-doped zinc oxide), IWO (indium-doped tungsten oxide), ITIO (titanium-tin-doped indium oxide), BZO (boron-doped zinc oxide) or ICO (cerium-doped indium oxide), or a combination of at least two of them.

[0019] Preferably, the thickness of the first transparent electrode layer and the second transparent electrode layer are independently 10-2000 nm, for example, 10 nm, 50 nm, 100 nm, 500 nm, 1000 nm, 1500 nm or 2000 nm.

[0020] Preferably, the first charge transport layer and the second charge transport layer transport charges of opposite electrical properties. Exemplarily, if the first charge transport layer is an electron transport layer, then the second charge transport layer is a hole transport layer, and if the first charge transport layer is a hole transport layer, then the second charge transport layer is an electron transport layer.

[0021] It should be noted that the material of the electron transport layer can be, for example, C 60 ; The material of the hole transport layer can be, for example, NiO2.

[0022] Preferably, the band gap of the perovskite absorption layer is 1.5-1.8 eV, for example, it can be 1.5 eV, 1.6 eV, 1.7 eV or 1.8 eV.

[0023] Preferably, the crystalline silicon bottom cell and the perovskite top cell are both nip structures or pin structures.

[0024] Preferably, the crystalline silicon bottom cell is any one of a PERC cell (emitter and back passivation cell), a TopCon cell (tunneling oxide passivation contact solar cell) or a HJT cell (heterojunction cell). Preferably, in the HJT cell, a third transparent electrode layer is provided on a surface of one side close to the perovskite top cell.

[0025] Preferably, the material of the third transparent electrode layer includes any one of FTO, ITO, IZO, AZO, IWO or ICO, or a combination of at least two thereof.

[0026] In the present invention, the third transparent electrode layer is used to improve the carrier collection efficiency and achieve better ohmic contact with the series grid line, thereby improving the transmission efficiency of the top cell and the bottom cell.

[0027] Preferably, a surface of the third transparent electrode layer on one side close to the series gate line has a groove corresponding to the series gate line, for embedding a part of the series gate line.

[0028] In the present invention, part of the series-connected gate lines are embedded in the grooves of the third transparent electrode layer, which helps to improve the conduction efficiency.

[0029] Preferably, the height of the series gate lines is greater than the thickness of the transparent substrate.

[0030] Preferably, the depth of the groove is less than the thickness of the third transparent electrode layer.

[0031] Preferably, the crystalline silicon bottom cell comprises a crystalline silicon bottom cell body, and a back electrode layer arranged on a surface of a side of the crystalline silicon bottom cell body away from the perovskite top cell.

[0032] Preferably, the material of the back electrode layer includes conductive metal or conductive alloy.

[0033] Preferably, the material of the top electrode grid line includes a conductive metal or a conductive alloy.

[0034] It should be noted that the above-mentioned conductive metal may be, for example, copper, aluminum, tin, nickel, iron, silver or gold.

[0035] It should be noted that the above-mentioned conductive alloy may be, for example, a combination of any two or at least three of copper, aluminum, tin, nickel, iron, silver or gold.

[0036] Preferably, the orthographic projection of the top electrode gate line coincides with the orthographic projection of the series gate line.

[0037] In a second aspect, the present invention provides a method for preparing a tandem perovskite-crystalline silicon stacked solar cell as described in the first aspect, the preparation method comprising the following steps:

[0038] (1) A perovskite top cell and a crystalline silicon bottom cell are prepared respectively, and then a scratching process is used to completely remove the portion of the transparent substrate corresponding to the series gate line in the perovskite top cell to expose the first transparent electrode layer.

[0039] The perovskite top cell comprises a transparent substrate, and a first transparent electrode layer, a first charge transfer layer, a perovskite absorption layer, a second charge transfer layer, a second transparent electrode layer and a top electrode grid line deposited in sequence on the surface of one side of the transparent substrate, and a plurality of series grid lines are arranged at intervals on the surface of one side of the crystalline silicon bottom cell.

[0040] (2) The perovskite top cell and the crystalline silicon bottom cell are bonded and connected in series, so that the series grid line on the crystalline silicon bottom cell is embedded in the discontinuous area of ​​the transparent substrate and realizes ohmic contact with the first transparent electrode layer, thereby obtaining the series perovskite-crystalline silicon stacked solar cell.

[0041] Preferably, in step (1), the method for depositing the first transparent electrode layer, the first charge transport layer, the perovskite absorption layer, the second charge transport layer and the second transparent electrode layer independently comprises any one of vacuum evaporation, magnetron sputtering, screen printing, coating, lamination or welding, or a combination of at least two thereof.

[0042] Preferably, the preparation methods of the top electrode gate line and the series connection gate line each independently include any one of screen printing, thermal evaporation or magnetron sputtering, or a combination of at least two of them.

[0043] Preferably, the scribing process in step (1) includes laser scribing or mechanical scribing.

[0044] Preferably, the method for bonding and connecting the perovskite top cell and the crystalline silicon bottom cell in series in step (2) comprises a hot stamping method.

[0045] Preferably, the hot stamping temperature is 80-150°C, for example, 80°C, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C or 150°C.

[0046] In the present invention, the hot stamping method has an stamping temperature of 80-150° C., which can achieve a better bonding effect, so that the series gate line has better contact with the third transparent electrode layer and the first transparent electrode layer.

[0047] In a third aspect, the present invention provides an application of the tandem perovskite-crystalline silicon stacked solar cell as described in the first aspect in a photovoltaic component.

[0048] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0049] Compared with the prior art, the present invention has the following beneficial effects:

[0050] (1) The present invention uses series grid lines to connect the perovskite top cell and the crystalline silicon bottom cell in series, thereby achieving good contact and significantly improving the photoelectric performance of the stacked solar cell.

[0051] (2) In the present invention, the perovskite top cell and the crystalline silicon bottom cell can be prepared independently, without adversely affecting the structure of the perovskite absorption layer and the bottom cell.

[0052] (3) The preparation of the top battery in the present invention is not limited by the bottom battery structure and can adopt the existing mature preparation process, which can greatly improve the production efficiency and has good development potential. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] Figure 1 This is a schematic diagram of the structure of a tandem perovskite-crystalline silicon stacked solar cell provided in Example 1 of the present invention.

[0054] Among them, 1-transparent substrate; 2-first transparent electrode layer; 3-functional layer; 31-electron transport layer; 32-perovskite absorption layer; 33-hole transport layer; 4-second transparent electrode layer; 5-top electrode grid line; 6-crystalline silicon bottom cell body; 7-third transparent electrode layer; 8-series grid line; 9-back electrode layer. DETAILED DESCRIPTION

[0055] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0056] Example 1

[0057] This embodiment provides a tandem perovskite-crystalline silicon stacked solar cell, and its structural schematic diagram is as follows: Figure 1 As shown, it includes a stacked crystalline silicon bottom cell and a perovskite top cell;

[0058] The perovskite top cell is a nip structure, and includes a transparent substrate 1, a first transparent electrode layer 2, an electron transport layer 31, a perovskite absorption layer 32, a hole transport layer 33, a second transparent electrode layer 4 and a top electrode grid line 5 in the direction away from the crystalline silicon bottom cell, wherein the electron transport layer 31, the perovskite absorption layer 32 and the hole transport layer 33 are collectively referred to as a functional layer 3; the material of the transparent substrate 1 is PET, with a thickness of 1000 μm; the materials of the first transparent electrode layer 2 and the second transparent electrode layer 4 are both ITO, with a thickness of 100 nm; the material of the electron transport layer 31 is C 60 , with a thickness of 20 nm; the chemical formula of the perovskite absorption layer 32 is Cs 0.3 FA 0.7 PbI 1.8 Br 1.2 , with a thickness of 250nm and a band gap of 1.8eV; the material of the hole transport layer 33 is NiO2, with a thickness of 30nm; the material of the top electrode gate line 5 is copper.

[0059] The crystalline silicon bottom cell is an HJT cell, comprising a crystalline silicon bottom cell body 6 and a back electrode layer 9. The crystalline silicon bottom cell body 6 comprises a P-type amorphous silicon film, a first intrinsic amorphous silicon film, an n-type crystalline silicon wafer, a second intrinsic amorphous silicon film and an N-type amorphous silicon film stacked in sequence in a direction away from the perovskite top cell. A third transparent electrode layer 7 is disposed on the surface of the crystalline silicon bottom cell on one side close to the perovskite top cell, and a plurality of series gate lines 8 are arranged at intervals on the third transparent electrode layer 7; the material of the series gate lines 8 is silver.

[0060] The transparent substrate 1 is a non-continuous substrate, and the discontinuous area of ​​the non-continuous substrate is used to embed the series gate line 8 of the crystalline silicon bottom battery, so that the series gate line 8 and the first transparent electrode layer 2 achieve ohmic contact; the width of the discontinuous area of ​​the transparent substrate 1 is equal to the width of the series gate line 8; the thickness of the transparent substrate 1 is the same as the height of the series gate line 8; the orthographic projection of the top electrode gate line 5 coincides with the orthographic projection of the series gate line 8.

[0061] The sizes of the crystalline silicon bottom cell and the perovskite top cell remain consistent.

[0062] This embodiment also provides a method for preparing the above-mentioned tandem perovskite-crystalline silicon stacked solar cell, the preparation method comprising the following steps:

[0063] (1) preparing a perovskite top cell: on one side surface of a transparent substrate 1, a first transparent electrode layer 2 is deposited by a magnetron sputtering method, a hole transport layer 31 is deposited by a vacuum evaporation method, a perovskite absorption layer 32 is deposited by a slit coating method, an electron transport layer 33 is deposited by a magnetron sputtering method, and a second transparent electrode layer 4 is deposited by a magnetron sputtering method;

[0064] An n-type heterojunction bottom cell is provided, and then a laser scribing process is used to completely remove the portion of the transparent substrate 1 corresponding to the series gate line 8 in the perovskite top cell to expose the first transparent electrode layer 2.

[0065] The third transparent electrode layer 7 is deposited on one side of the n-type heterojunction bottom cell by magnetron sputtering, and then silver series gate lines 8 are arranged at intervals on the third transparent electrode layer by screen printing.

[0066] (2) The perovskite top cell and the n-type heterojunction bottom cell are thermally bonded and connected in series at 80° C., so that the series grid line 8 on the n-type heterojunction bottom cell is embedded in the discontinuous area of ​​the transparent substrate 1 and realizes ohmic contact with the first transparent electrode layer 2, and then the top electrode grid line 5 is deposited on one side of the second transparent electrode layer 4 of the top cell by a printing method, and the orthographic projection of the top electrode grid line 5 is overlapped with the orthographic projection of the series grid line 8, so as to obtain the series perovskite-crystalline silicon stacked solar cell.

[0067] Example 2

[0068] This embodiment provides a tandem perovskite-crystalline silicon stacked solar cell, comprising a stacked crystalline silicon bottom cell and a perovskite top cell;

[0069] The perovskite top cell is a nip structure, and includes a transparent substrate, a first transparent electrode layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, a second transparent electrode layer and a top electrode grid line in the direction away from the crystalline silicon bottom cell; the material of the transparent substrate is PVDF with a thickness of 500 μm; the materials of the first transparent electrode layer and the second transparent electrode layer are both ITO with a thickness of 1000 nm; the material of the electron transport layer is C 60 , with a thickness of 20 nm; the chemical formula of the perovskite absorption layer is Cs 0.3 FA 0.7 PbI 1.8 Br 1.2 , thickness is 250nm, band gap is 1.8eV; the material of the hole transport layer is NiO2, thickness is 30nm; the material of the top electrode gate line is copper.

[0070] The crystalline silicon bottom cell is an HJT cell, comprising a crystalline silicon bottom cell body and a back electrode layer, wherein the crystalline silicon bottom cell body comprises a P-type amorphous silicon film, a first intrinsic amorphous silicon film, an n-type crystalline silicon wafer, a second intrinsic amorphous silicon film and an N-type amorphous silicon film which are stacked in sequence in a direction away from the perovskite top cell. A third transparent electrode layer is disposed on the surface of one side of the crystalline silicon bottom cell close to the perovskite top cell, and a plurality of series gate lines are arranged at intervals on the third transparent electrode layer; the material of the series gate lines is silver.

[0071] The transparent substrate is a non-continuous substrate, and the discontinuous area of ​​the non-continuous substrate is used to embed the series gate line of the crystalline silicon bottom battery, so that the series gate line and the first transparent electrode layer achieve ohmic contact; the width of the discontinuous area of ​​the transparent substrate is equal to the width of the series gate line; the thickness of the transparent substrate is the same as the height of the series gate line; the orthographic projection of the top electrode gate line coincides with the orthographic projection of the series gate line.

[0072] The sizes of the crystalline silicon bottom cell and the perovskite top cell remain consistent.

[0073] This embodiment also provides a method for preparing the above-mentioned tandem perovskite-crystalline silicon stacked solar cell, the preparation method comprising the following steps:

[0074] (1) preparing a perovskite top cell: depositing a first transparent electrode layer by magnetron sputtering, depositing an electron transport layer by vacuum evaporation, depositing a perovskite absorption layer by slit coating, depositing a hole transport layer by magnetron sputtering, and depositing a second transparent electrode layer by magnetron sputtering on one side surface of a transparent substrate;

[0075] An n-type heterojunction bottom cell is provided, and then a laser scribing process is used to completely remove the portion of the transparent substrate corresponding to the series grid line in the perovskite top cell to expose the first transparent electrode layer.

[0076] A third transparent electrode layer is deposited on one side of the n-type heterojunction bottom cell by magnetron sputtering, and then silver series grid lines are arranged at intervals on the third transparent electrode layer by screen printing.

[0077] (2) The perovskite top cell and the n-type heterojunction bottom cell are thermally bonded and connected in series at 80° C., so that the series grid line on the n-type heterojunction bottom cell is embedded in the discontinuous area of ​​the transparent substrate and realizes ohmic contact with the first transparent electrode layer. Then, the top electrode grid line is deposited on one side of the second transparent electrode layer of the top cell by a printing method, and the orthographic projection of the top electrode grid line is overlapped with the orthographic projection of the series grid line, so as to obtain the series perovskite-crystalline silicon stacked solar cell.

[0078] Example 3

[0079] This embodiment provides a tandem perovskite-crystalline silicon stacked solar cell, comprising a stacked crystalline silicon bottom cell and a perovskite top cell;

[0080] The perovskite top cell is a nip structure, and includes a transparent substrate, a first transparent electrode layer, an electron transport layer, a perovskite absorption layer, a hole transport layer, a second transparent electrode layer and a top electrode grid line in the direction away from the crystalline silicon bottom cell; the material of the transparent substrate is PI, with a thickness of 2000 μm; the materials of the first transparent electrode layer and the second transparent electrode layer are both ITO, with a thickness of 2000 nm; the material of the electron transport layer is C 60 , with a thickness of 20 nm; the chemical formula of the perovskite absorption layer is Cs 0.3 FA 0.7 PbI 1.8 Br 1.2 , thickness is 250nm, band gap is 1.8eV; the material of the hole transport layer is NiO2, thickness is 30nm; the material of the top electrode gate line is copper.

[0081] The crystalline silicon bottom cell is an HJT cell, comprising a crystalline silicon bottom cell body and a back electrode layer, wherein the crystalline silicon bottom cell body comprises a P-type amorphous silicon film, a first intrinsic amorphous silicon film, an n-type crystalline silicon wafer, a second intrinsic amorphous silicon film and an N-type amorphous silicon film which are stacked in sequence in a direction away from the perovskite top cell. A third transparent electrode layer is disposed on the surface of one side of the crystalline silicon bottom cell close to the perovskite top cell, and a plurality of series gate lines are arranged at intervals on the third transparent electrode layer; the material of the series gate lines is silver.

[0082] The transparent substrate is a non-continuous substrate, and the discontinuous region of the non-continuous substrate is used to embed the series gate line of the crystalline silicon bottom cell, so that the series gate line and the first transparent electrode layer achieve ohmic contact; the width of the discontinuous region of the transparent substrate is equal to the width of the series gate line; the thickness of the transparent substrate is the same as the height of the series gate line. The orthographic projection of the top electrode gate line coincides with the orthographic projection of the series gate line.

[0083] The sizes of the crystalline silicon bottom cell and the perovskite top cell remain consistent.

[0084] This embodiment also provides a method for preparing the above-mentioned tandem perovskite-crystalline silicon stacked solar cell, the preparation method comprising the following steps:

[0085] (1) preparing a perovskite top cell: depositing a first transparent electrode layer by magnetron sputtering, depositing an electron transport layer by vacuum evaporation, depositing a perovskite absorption layer by slit coating, depositing a hole transport layer by magnetron sputtering, and depositing a second transparent electrode layer by magnetron sputtering on one side surface of a transparent substrate;

[0086] A crystalline silicon bottom cell is provided, and then a laser scribing process is used to completely remove the portion of the transparent substrate corresponding to the series gate line in the perovskite top cell to expose the first transparent electrode layer.

[0087] A third transparent electrode layer is deposited on one side of the n-type heterojunction bottom cell by magnetron sputtering, and then silver series grid lines are arranged at intervals on the third transparent electrode layer by screen printing.

[0088] (2) The perovskite top cell and the n-type heterojunction bottom cell are thermally bonded and connected in series at 150° C., so that the series grid lines on the n-type heterojunction bottom cell are embedded in the discontinuous area of ​​the transparent substrate and achieve ohmic contact with the first transparent electrode layer. Then, the top electrode grid lines are deposited on one side of the second transparent electrode layer of the top cell by a printing method, and the orthographic projection of the top electrode grid lines is overlapped with the orthographic projection of the series grid lines, thereby obtaining the series perovskite-crystalline silicon stacked solar cell.

[0089] Example 4

[0090] The difference between this embodiment and embodiment 1 is that a surface of the third transparent electrode layer on one side close to the series gate line has a groove corresponding to the series gate line, and the depth of the groove is less than the thickness of the third transparent electrode layer; the height of the series gate line is greater than the thickness of the transparent substrate, one end of the series gate line is embedded in the groove, and the other end is in contact with the first transparent electrode layer.

[0091] The rest of the battery structure and parameters remain the same as those in Example 1.

[0092] Comparative Example 1

[0093] The difference between this comparative example and Example 1 is that no series gate lines are provided, and the transparent substrate is a continuous substrate.

[0094] The rest of the battery structure and parameters remain the same as those in Example 1.

[0095] In summary, the present invention uses the series grid line to connect the perovskite top cell and the crystalline silicon bottom cell in series, achieving good contact, which can significantly improve the photoelectric performance of the stacked solar cell. In addition, the perovskite top cell and the crystalline silicon bottom cell in the present invention can be prepared independently, which will not adversely affect the structure of the perovskite absorption layer and the bottom cell, can greatly improve production efficiency, and has good development potential.

[0096] It can be seen from Examples 1 and 4 that the series gate line is partially embedded in the groove opened on the surface of the third transparent electrode layer, which can achieve better contact and tight contact between the perovskite top cell and the crystalline silicon bottom cell, thereby improving the performance of the stacked solar cell.

[0097] It can be seen from Example 1 and Comparative Example 1 that if no series gate lines are provided and the transparent substrate is a continuous substrate, the perovskite top cell and the crystalline silicon bottom cell cannot achieve good contact, resulting in a poor stacking effect.

[0098] The applicant declares that the present invention illustrates the process method of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned process steps, that is, it does not mean that the present invention must rely on the above-mentioned process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A tandem perovskite-crystalline silicon tandem solar cell, characterized in that: It includes a crystalline silicon bottom cell and a perovskite top cell arranged in a stacked manner; The perovskite top cell includes, in sequence along a direction away from the crystalline silicon bottom cell, a transparent substrate, a first transparent electrode layer, a first charge transport layer, a perovskite absorption layer, a second charge transport layer, a second transparent electrode layer and a top electrode grid line; A plurality of series-connected gate lines are arranged at intervals on a surface of the crystalline silicon bottom cell on one side close to the perovskite top cell; The transparent substrate is a discontinuous substrate, and the discontinuous area of ​​the discontinuous substrate is used to embed the series gate line of the crystalline silicon bottom cell, so that the series gate line and the first transparent electrode layer achieve ohmic contact.

2. The tandem perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that: The sizes of the crystalline silicon bottom cell and the perovskite top cell are kept consistent; Preferably, the transparent substrate comprises any one of PET, PVDF, ETFE, PI, POE, EVA, EPE or glass, or a combination of at least two thereof; Preferably, the transparent substrate has a thickness of 10-2000 μm.

3. The tandem perovskite-crystalline silicon tandem solar cell according to claim 1, characterized in that: The width of the discontinuous region of the transparent substrate is greater than or equal to the width of the series gate line; Preferably, the thickness of the transparent substrate is the same as the height of the series gate lines; Preferably, the material of the series gate lines includes a conductive metal element or a conductive alloy.

4. The tandem perovskite-crystalline silicon tandem solar cell according to any one of claims 1 to 3, characterized in that: The materials of the first transparent electrode layer and the second transparent electrode layer independently include any one of FTO, ITO, IZO, AZO, IWO, ITIO, BZO or ICO, or a combination of at least two thereof; Preferably, the thickness of the first transparent electrode layer and the second transparent electrode layer are independently 10-2000 nm; Preferably, the first charge transport layer and the second charge transport layer transport charges of opposite electrical properties; Preferably, the band gap of the perovskite absorption layer is 1.5-1.8 eV.

5. The tandem perovskite-crystalline silicon tandem solar cell according to claim 1 or 2, characterized in that: The crystalline silicon bottom cell and the perovskite top cell are both nip structures or pin structures; Preferably, the crystalline silicon bottom cell is any one of a PERC cell, a TopCon cell or a HJT cell; Preferably, in the HJT cell, a third transparent electrode layer is provided on a surface of one side close to the perovskite top cell; Preferably, the material of the third transparent electrode layer includes any one of FTO, ITO, IZO, AZO, IWO or ICO, or a combination of at least two thereof; Preferably, a surface of the third transparent electrode layer on one side close to the series gate line has a groove corresponding to the series gate line, for embedding a part of the series gate line; Preferably, the height of the series gate line is greater than the thickness of the transparent substrate; Preferably, the depth of the groove is less than the thickness of the third transparent electrode layer.

6. The tandem perovskite-crystalline silicon tandem solar cell according to any one of claims 1 to 3, characterized in that: The crystalline silicon bottom cell comprises a crystalline silicon bottom cell body, and a back electrode layer arranged on a surface of a side of the crystalline silicon bottom cell body away from the perovskite top cell; Preferably, the material of the back electrode layer includes a conductive metal or a conductive alloy; Preferably, the material of the top electrode grid line includes a conductive metal element or a conductive alloy; Preferably, the orthographic projection of the top electrode gate line coincides with the orthographic projection of the series gate line.

7. A method for preparing a tandem perovskite-crystalline silicon stacked solar cell according to any one of claims 1 to 6, characterized in that: The preparation method comprises the following steps: (1) preparing a perovskite top cell and a crystalline silicon bottom cell respectively, and then using a scribing process to completely remove the portion of the transparent substrate corresponding to the series gate line in the perovskite top cell to expose the first transparent electrode layer; The perovskite top cell comprises a transparent substrate, and a first transparent electrode layer, a first charge transport layer, a perovskite absorption layer, a second charge transport layer, a second transparent electrode layer and a top electrode grid line sequentially deposited on a surface of one side of the transparent substrate, and a plurality of series-connected grid lines are arranged at intervals on a surface of one side of the crystalline silicon bottom cell; (2) The perovskite top cell and the crystalline silicon bottom cell are bonded and connected in series, so that the series grid line on the crystalline silicon bottom cell is embedded in the discontinuous area of ​​the transparent substrate and realizes ohmic contact with the first transparent electrode layer, thereby obtaining the series perovskite-crystalline silicon stacked solar cell.

8. The preparation method according to claim 7, characterized in that: Step (1) The deposition methods of the first transparent electrode layer, the first charge transport layer, the perovskite absorption layer, the second charge transport layer and the second transparent electrode layer independently include any one of vacuum evaporation, magnetron sputtering, screen printing, coating, lamination or welding, or a combination of at least two thereof; Preferably, the preparation methods of the top electrode grid lines and the series grid lines each independently include any one of screen printing, thermal evaporation or magnetron sputtering, or a combination of at least two thereof; Preferably, the scribing process in step (1) includes laser scribing or mechanical scribing.

9. The preparation method according to claim 7 or 8, characterized in that: The method for bonding and connecting the perovskite top cell and the crystalline silicon bottom cell in series in step (2) includes a hot stamping method; Preferably, the hot stamping method has an stamping temperature of 80-150°C.

10. Use of the tandem perovskite-crystalline silicon stacked solar cell according to any one of claims 1 to 6 in a photovoltaic module.

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