A silicon carbide wafer thinning grinding wheel and a preparation method thereof

Abstract

The application belongs to the technical field of abrasive tool preparation, and particularly relates to a silicon carbide wafer thinning grinding wheel, which comprises a base body, a grinding layer arranged on the base body, wherein the grinding layer comprises, in terms of mass fraction, 45-65 parts of modified diamond, 5-10 parts of soft abrasive, 20-35 parts of low-temperature glass powder, 5-15 parts of filler and 0.5-5 parts of pore-forming agent; and the modified diamond is diamond coated with a silicon dioxide film. The application further comprises preparation and application of the silicon carbide wafer thinning grinding wheel. The silicon carbide wafer thinning grinding wheel has uniform diamond distribution and good holding force, and is firmly combined with the low-temperature glass powder and not easy to fall off. The grinding wheel prepared by the application has high hardness, small wear ratio and high grinding efficiency.

Description

Technical Field

[0001] This invention belongs to the field of abrasive preparation technology, specifically relating to a silicon carbide wafer thinning grinding wheel and its preparation method. Background Technology

[0002] Silicon carbide, a semiconductor material, has the characteristics of high overall high voltage resistance and high thermal conductivity, and is widely used in the medium voltage market, such as high voltage and high frequency devices.

[0003] Compared to monocrystalline silicon, silicon carbide is harder, more brittle, and more expensive to manufacture. It requires thinning the back side through grinding to reduce the chip's on-resistance and improve heat dissipation. However, due to its high hardness and low fracture toughness, silicon carbide is highly susceptible to surface and subsurface damage during grinding, such as microcracks, pits, amorphous deposits, and dislocations. This severely impacts the yield and processing cost of semiconductor substrates.

[0004] Existing grinding wheels, such as the one disclosed in patent CN102363578B, use a ceramic-bonded grinding wheel for steel balls. This wheel uses clay, feldspar, borosilicate glass, bentonite, and manganese hydrate to create a high-strength, high-shrinkage engineering ceramic binder, which is then combined with a mixed-material abrasive. The opacification effect of borosilicate glass promotes glass nucleation, while the fluxing agents bentonite and manganese hydrate powder contribute to the formation of a high-strength, high-shrinkage engineering ceramic structure. This is then cold-pressed under high pressure and fired at a specific temperature to produce the ceramic-bonded grinding wheel. However, this type of grinding wheel requires firing at 1250℃, resulting in high energy consumption, resource waste, and increased production costs.

[0005] Patent CN112497087A discloses a high-bending-strength bronze-based diamond grinding wheel and its preparation method. It involves adding copper-tin pre-alloy powder to a copper-based base, modifying and adding diamond micropowder to effectively improve the alloying degree of the bronze base, and adding binder components such as boron carbide, chromium oxide, and silicon carbide to significantly enhance the bonding force between the grinding wheel base material and the binder. This results in a significantly improved grinding wheel strength, making it less prone to breakage, detachment, and chipping during processing. However, while this patented bronze-based diamond grinding wheel exhibits high bending strength, the binder is not treated to create pores, resulting in generally poor self-sharpening properties. It also has poor continuous thinning capabilities for materials such as silicon carbide, easily causing workpiece cracking and scrapping, thus failing to meet the high-precision machining requirements of semiconductor materials.

[0006] Patent CN104230319A discloses a low-temperature ceramic binder and its preparation process. The raw materials of this binder are composed of the following by weight percentage: 10%–18% kaolin, 20%–25% albite, 20%–25% low-borosilicate glass, 30%–40% high-borosilicate glass, 5%–10% lithium carbonate, and 1%–5% calcium carbonate. This binder is fired at 900℃, exhibits a certain reactivity with abrasives, has high binding strength with abrasives, and possesses high inherent strength. However, the silicon carbide ceramic grinding wheels prepared with this binder suffer from low durability and cannot meet the requirements for grinding applications.

[0007] In summary, in the existing technology, the diamond in silicon carbide thinning grinding wheels has strong chemical inertness and poor wettability to the bonding material, making it difficult for the bonding matrix to firmly hold the diamond; the abrasive falls off quickly, the overall structure is not uniform and has low strength, the wear ratio is large during processing, and the grinding efficiency is low. Summary of the Invention

[0008] To address the problems of poor overall microstructure uniformity, low diamond holding power, low strength, and insufficient grinding efficiency in existing silicon carbide wafer thinning grinding wheels, this invention aims to provide a silicon carbide wafer thinning grinding wheel and its preparation method. The grinding wheel prepared by this invention has uniform diamond distribution and good holding power; it bonds firmly with low-temperature glass powder and is not easily detached; the grinding wheel prepared by this invention has high hardness, low wear ratio during grinding, and high grinding efficiency.

[0009] To achieve the above objectives, the present invention adopts the following technical solution:

[0010] A silicon carbide wafer thinning grinding wheel includes a substrate and an abrasive layer disposed on the substrate;

[0011] The abrasive layer, by mass, comprises 45-65 parts modified diamond, 5-10 parts soft abrasive, 20-35 parts low-temperature glass powder, 5-15 parts filler, and 0.5-5 parts pore-forming agent.

[0012] The modified diamond is a diamond with a silicon dioxide film coated on its surface.

[0013] Modified diamond is coated with a silicon dioxide film. This film contains active oxygen groups that can react with low-temperature glass powder, thereby effectively improving the interfacial bonding between diamond and low-temperature glass powder.

[0014] Furthermore, the diamond is selected from ultrafine diamonds, preferably with a particle size of 1000 mesh to 4000 mesh, and more preferably with a particle size of 2000 mesh. The diamond type can be polycrystalline diamond powder and / or single-crystal diamond powder.

[0015] Furthermore, the soft abrasive includes at least one of cerium dioxide, iron oxide, and magnesium oxide.

[0016] Furthermore, the low-temperature glass powder is composed of clay powder, feldspar powder, borosilicate glass powder, Li2O2, and SiO2.

[0017] Furthermore, the low-temperature glass powder, by mass parts, consists of 5-25 parts clay powder, 5-20 parts feldspar powder, 39-60 parts borosilicate glass powder, 1-5 parts Li2O2 and 9-18 parts SiO2.

[0018] Furthermore, the filler includes at least one of calcium carbonate, calcium silicate, and barium sulfate.

[0019] Preferably, the filler is calcium silicate; more preferably, the filler is calcium silicate whiskers, the calcium silicate whiskers having a diameter of 0.2~5μm and an aspect ratio of (3~20):1.

[0020] The filler described above has a reinforcing and toughening effect in this invention, which increases the strength and toughness of the binder and provides a certain degree of elasticity. This enables full-coverage grinding of the edges and corners of semiconductor wafers without brittle fracture of the diamond layer or binder layer.

[0021] Furthermore, the pore-forming agent includes at least one of soda lime borosilicate glass hollow spheres, alumina hollow spheres, graphite, and sodium chloride.

[0022] The grinding wheel contains an appropriate amount of pore-forming agent to achieve certain chip-reducing and heat dissipation effects. The low-temperature glass powder silicon carbide wafer thinning grinding wheel has good comprehensive grinding performance during the grinding process, and the surface roughness of the ground silicon wafer has a small fluctuation range.

[0023] This invention also provides a method for preparing a silicon carbide wafer thinning grinding wheel, comprising the following steps:

[0024] S1: Add the modifier to an ethanol-water mixture, mix well, and hydrolyze at 45~60℃ for 0.5-8 h to obtain a hydrolysate of the modifier. Add diamond to the hydrolysate and stir at 50-100℃ for 0.5-8 h. Finally, allow it to stand and evaporate at 20~45℃ for 24-48 h to obtain modified diamond.

[0025] S2: Mix the modified diamond, soft abrasive, and filler in a mixer for 1-3 hours, then remove and sieve to obtain mixture A;

[0026] S3: Crush the low-temperature glass powder, ball mill it, dry it, and sieve it to obtain mixture B;

[0027] S4: Mix the pore-forming agent, mixture A and mixture B in a mixer for 30-60 minutes, then remove and sieve to obtain mixture C;

[0028] S5: Place the mixture C and the matrix into a mold and press them into shape at a pressure of 1-6 MPa, a pressing temperature of 180-230℃, and a holding time of 30-120 min.

[0029] S6: Place the grinding wheel pressed in S5 in an oven and heat it to 600-700℃ at a heating rate of 1-5℃ / min. Hold it at that temperature for 12-24 hours and then cool it to room temperature to obtain the required grinding wheel blank.

[0030] S7: The grinding wheel blank obtained in S6 is processed by machining the base body, inner and outer circles and dressing the grinding wheel layer to obtain the finished grinding wheel.

[0031] Further, in S1, the modifier includes at least one of tetramethoxysilane, trimethoxysilane, triethoxysilane, trimethoxypropylsilane, triethoxypropylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, aminopropyltriethoxysilane, and mercaptopropyltriethoxysilane.

[0032] Further, in S1, the volume ratio of the modifier to the ethanol-water mixed solution is (1~4):(35~40).

[0033] Preferably, the volume ratio of the modifier to the ethanol-water mixed solution is 1:35, 1:36, 1:37, 2:38, 2:39, 2:40, 3:40, or 4:40.

[0034] Further, in S1, the volume ratio of ethanol to water in the ethanol-water mixed solution is (20~50):(50~80).

[0035] Preferably, the volume ratio of ethanol to water is 50:50, 45:55, 40:60, 35:65, 30:70, 25:75 or 20:80.

[0036] Furthermore, in S1, the liquid-to-solid ratio of the modifier to diamond is (1~4):(10~30), with the unit of liquid-to-solid ratio being mL / g.

[0037] Furthermore, the sieve used in S2~4 is 100~200 mesh. Beneficial effects

[0038] The silicon carbide wafer thinning grinding wheel provided by this invention has a layer of chemically active silicon dioxide film coated on the surface of the diamond used in the grinding wheel, which allows it to react with resin under low-temperature sintering conditions, thereby improving the holding force of the resin matrix on the diamond, increasing the service life of the grinding wheel, and thus improving the processing efficiency of low-temperature glass powder grinding wheels.

[0039] The silicon carbide wafer thinning grinding wheel provided by this invention contains fillers such as calcium silicate whiskers, which enhance and toughen the material. This increases the strength and toughness of the low-temperature glass powder prepared by this invention, and also provides a certain degree of elasticity, thus preventing brittle fracture of the diamond layer or binder layer during the grinding process.

[0040] The silicon carbide wafer thinning grinding wheel provided by this invention contains a pore-forming agent, resulting in high porosity. The porous structure helps to contain chips and increase the sharpness of the cutting head, leading to good surface quality and high processing efficiency in the machined workpiece. Detailed Implementation

[0041] The present invention will now be described in detail with reference to specific embodiments. These embodiments are implemented based on the technical solution of the present invention, providing detailed implementation methods and specific operating procedures. However, the scope of protection of the present invention is not limited to the following embodiments. Example

[0042] A silicon carbide wafer thinning grinding wheel includes a substrate and an abrasive layer disposed on the substrate.

[0043] The abrasive layer, by weight, comprises 45 parts modified diamond, 5 parts iron oxide, 5 parts magnesium oxide, 25 parts low-temperature glass powder, 10 parts calcium silicate whiskers, and 3 parts soda lime borosilicate glass hollow spheres. The low-temperature glass powder consists of 15 parts clay powder, 15 parts feldspar powder, 50 parts borosilicate glass powder, 3 parts Li2O2, and 17 parts SiO2.

[0044] A method for preparing a silicon carbide wafer thinning grinding wheel includes the following steps:

[0045] S1: Add 10 mL of tetramethoxysilane to 190 mL of ethanol-water mixed solution (ethanol to water volume ratio of 2:8), mix well, and hydrolyze at 50℃ for 4 h to obtain the hydrolysis solution of the modifier. Add 20 g of 2000 mesh polycrystalline diamond to the hydrolysis solution, stir at 80℃ for 6 h, and finally let it stand at 25℃ for 24 h to evaporate, thus obtaining the modified diamond.

[0046] S2: Modified diamond, iron oxide, magnesium oxide, and calcium silicate whiskers are stirred in a mixer for 1 hour, then taken out and sieved through a 100-mesh sieve to obtain mixture A;

[0047] S3: Crush the polyurethane-modified epoxy resin DER858, ball mill it, dry it, and sieve it with a 100-mesh sieve to obtain mixture B;

[0048] S4: Mix the soda lime borosilicate glass hollow spheres, mixture A and mixture B in a mixer for 40 minutes, then remove and sieve to obtain mixture C;

[0049] S5: Place the mixture C and the matrix into a mold and press them into shape at a pressure of 3MPa, a pressing temperature of 200℃, and a holding time of 60 min.

[0050] S6: Place the grinding wheel pressed in S5 in an oven and heat it to 680℃ at a heating rate of 2℃ / min. Hold it at that temperature for 12 hours and then cool it to room temperature to obtain the desired grinding wheel blank.

[0051] S7: The grinding wheel blank obtained in S6 is processed by machining the base body, inner and outer circles and dressing the grinding wheel layer to obtain the finished grinding wheel.

[0052] In S4, the pore size of the soda lime borosilicate glass hollow sphere is 5~20 μm.

[0053] Test results:

[0054] The silicon carbide wafer thinning grinding wheel prepared above was applied to a silicon carbide-specific grinding machine for testing. It was used to grind a 4-inch silicon carbide ingot. The grinding process parameters were: wheel speed 1500 r / min, chuck speed 120 r / min, and feed rate 1.0 / 0.4 / 0.2 μm / s. The grinding wheel prepared in this embodiment exhibited good diamond holding power, with no diamond detachment during ingot processing. The workpiece removal depth was 30 μm, the processing time was 3 min 14 s, the grinding marks were uniform with no abnormal noise, the surface roughness Ra was 14 nm, and the wheel wear ratio was 0. Example

[0055] A silicon carbide wafer thinning grinding wheel includes a substrate and an abrasive layer disposed on the substrate.

[0056] The abrasive layer, by weight, comprises 45 parts modified diamond, 5 parts iron oxide, 5 parts magnesium oxide, 25 parts low-temperature glass powder, 15 parts calcium silicate whiskers, and 3 parts soda lime borosilicate glass hollow spheres. The low-temperature glass powder consists of 15 parts clay powder, 15 parts feldspar powder, 50 parts borosilicate glass powder, 3 parts Li2O2, and 17 parts SiO2.

[0057] A method for preparing a silicon carbide wafer thinning grinding wheel includes the following steps:

[0058] S1: Add 10 mL of tetramethoxysilane to 190 mL of ethanol-water mixed solution (ethanol to water volume ratio of 2:8), mix well, and hydrolyze at 50℃ for 4 h to obtain the hydrolysis solution of the modifier. Add 20 g of 2000 mesh polycrystalline diamond to the hydrolysis solution, stir at 80℃ for 6 h, and finally let it stand at 25℃ for 24 h to evaporate, thus obtaining the modified diamond.

[0059] S2: Modified diamond, iron oxide, magnesium oxide, and calcium silicate whiskers are stirred in a mixer for 1 hour, then taken out and sieved through a 100-mesh sieve to obtain mixture A;

[0060] S3: Crush the polyurethane-modified epoxy resin DER858, ball mill it, dry it, and sieve it with a 100-mesh sieve to obtain mixture B;

[0061] S4: Mix the soda lime borosilicate glass hollow spheres, mixture A and mixture B in a mixer for 40 minutes, then remove and sieve to obtain mixture C;

[0062] S5: Place the mixture C and the matrix into a mold and press them into shape at a pressure of 3MPa, a pressing temperature of 200℃, and a holding time of 60 min.

[0063] S6: Place the grinding wheel pressed in S5 in an oven and heat it to 680℃ at a heating rate of 2℃ / min. Hold it at that temperature for 12 hours and then cool it to room temperature to obtain the desired grinding wheel blank.

[0064] S7: The grinding wheel blank obtained in S6 is processed by machining the base body, inner and outer circles and dressing the grinding wheel layer to obtain the finished grinding wheel.

[0065] In S4, the pore size of the soda lime borosilicate glass hollow sphere is 5~20 μm.

[0066] Test results:

[0067] The silicon carbide wafer thinning grinding wheel prepared above was applied to a silicon carbide-specific grinding machine for testing. It was used to grind a 4-inch silicon carbide ingot. The grinding process parameters were: wheel speed 1500 r / min, chuck speed 120 r / min, and feed rate 1.0 / 0.4 / 0.2 μm / s. The grinding wheel prepared in this embodiment exhibited good diamond holding power, with no diamond detachment during ingot processing. The workpiece removal depth was 30 μm, the processing time was 3 min 8 s, the grinding marks were uniform with no abnormal noise, the surface roughness Ra was 11 nm, and the wheel wear ratio was 0. Example

[0068] A silicon carbide wafer thinning grinding wheel includes a substrate and an abrasive layer disposed on the substrate.

[0069] The abrasive layer, by weight, comprises 40 parts modified diamond, 10 parts iron oxide, 5 parts magnesium oxide, 25 parts low-temperature glass powder, 10 parts calcium silicate whiskers, and 3 parts soda lime borosilicate glass hollow spheres. The low-temperature glass powder consists of 10 parts clay powder, 20 parts feldspar powder, 50 parts borosilicate glass powder, 5 parts Li₂O₂, and 15 parts SiO₂.

[0070] A method for preparing a silicon carbide wafer thinning grinding wheel includes the following steps:

[0071] S1: Add 10 mL of aminopropyltriethoxysilane to 190 mL of ethanol-water mixed solution (ethanol to water volume ratio of 2:8), mix well, and hydrolyze at 50℃ for 4 h to obtain the hydrolysis solution of the modifier. Add 20 g of 2000 mesh polycrystalline diamond to the hydrolysis solution, stir at 80℃ for 6 h, and finally let it stand at 25℃ for 24 h to evaporate, thus obtaining the modified diamond.

[0072] S2: Modified diamond, iron oxide, magnesium oxide, and calcium silicate whiskers are stirred in a mixer for 1 hour, then taken out and sieved through a 100-mesh sieve to obtain mixture A;

[0073] S3: Crush, ball mill, dry, and sieve the polyurethane-modified epoxy resin EPU-618 with a 100-mesh sieve to obtain mixture B;

[0074] S4: Mix the soda lime borosilicate glass hollow spheres, mixture A and mixture B in a mixer for 40 minutes, then remove and sieve to obtain mixture C;

[0075] S5: Place the mixture C and the matrix into a mold and press them into shape at a pressure of 3MPa, a pressing temperature of 200℃, and a holding time of 60 min.

[0076] S6: Place the grinding wheel pressed in S5 in an oven and heat it to 680℃ at a heating rate of 2℃ / min. Hold it at that temperature for 12 hours and then cool it to room temperature to obtain the desired grinding wheel blank.

[0077] S7: The grinding wheel blank obtained in S6 is processed by machining the base body, inner and outer circles and dressing the grinding wheel layer to obtain the finished grinding wheel.

[0078] In S4, the pore size of the soda lime borosilicate glass hollow sphere is 5~20 μm.

[0079] Test results:

[0080] The silicon carbide wafer thinning grinding wheel prepared above was applied to a silicon carbide-specific grinding machine for testing. It was used to grind a 4-inch silicon carbide ingot. The grinding process parameters were: wheel speed 1500 r / min, chuck speed 120 r / min, and feed rate 1.0 / 0.4 / 0.2 μm / s. The grinding wheel prepared in this embodiment exhibited good diamond holding power, with no diamond detachment during ingot processing. The workpiece removal depth was 30 μm, the processing time was 3 min 24 s, the grinding marks were uniform with no abnormal noise, the surface roughness Ra was 15 nm, and the wheel wear ratio was 0.

[0081] Compared with Example 1, the only difference is that the silicon carbide wafer thinning grinding wheel uses unmodified diamond in its abrasive layer, while the other operations and parameters are the same as in Example 1.

[0082] Test results:

[0083] The silicon carbide wafer thinning grinding wheel prepared above was applied to a silicon carbide-specific grinding machine for testing. It was used to grind a 4-inch silicon carbide ingot. The grinding process parameters were: wheel speed 1500 r / min, chuck speed 120 r / min, and feed rate 1.0 / 0.4 / 0.2 μm / s. In this comparative example, the grinding wheel exhibited diamond shedding during grinding, removed 30 μm of workpiece, took 3 min 48 s, produced uniform grinding marks without abnormal noise, had a surface roughness Ra of 42 nm, and a wheel wear ratio of 0.36 μm / wafer.

[0084] Compared with Example 1, the only difference is that a silicon carbide wafer thinning grinding wheel does not have calcium silicate whiskers added to its abrasive layer; all other operations and parameters are the same as in Example 1.

[0085] Test results:

[0086] The silicon carbide wafer thinning grinding wheel prepared above was applied to a silicon carbide-specific grinding machine for testing. It was used to grind 4-inch silicon carbide ingots with the following grinding parameters: wheel speed 1500 r / min, chuck speed 120 r / min, and feed rate 1.0 / 0.4 / 0.2 μm / s. The grinding wheel prepared in this comparative example exhibited good diamond holding power, with no diamond detachment during chip processing. The workpiece removal depth was 30 μm, the processing time was 5 min 15 s, the surface roughness Ra was 46 nm, and the wheel wear ratio was 0.47 μm / wafer.

[0087] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention in any other way. Any person skilled in the art may make changes or modifications to the above-disclosed technical content to create equivalent embodiments. However, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the scope of the present invention shall still fall within the protection scope of the present invention.

Claims

1. A silicon carbide wafer thinning grinding wheel, characterized in that, Includes a substrate; an abrasive layer disposed on the substrate; The abrasive layer, by mass parts, includes 45-65 parts modified diamond, 5-10 parts soft abrasive, 20-35 parts low-temperature glass powder, 5-15 parts filler, and 0.5-5 parts pore-forming agent. The soft abrasive is magnesium oxide; The low-temperature glass powder, by mass parts, consists of 5-25 parts clay powder, 5-20 parts feldspar powder, 39-60 parts borosilicate glass powder, 1-5 parts Li2O2 and 9-18 parts SiO2; The filler is calcium silicate; The pore-forming agent is a soda lime borosilicate glass hollow sphere; Modified diamond is diamond with a silicon dioxide film coated on its surface.

2. The grinding wheel according to claim 1, characterized in that, The diamond particle size is 1000 mesh to 4000 mesh.

3. The grinding wheel according to claim 1, characterized in that, Calcium silicate is calcium silicate whiskers with a diameter of 0.2~5 μm and an aspect ratio of (3~20):

1.

4. A method for preparing a silicon carbide wafer thinning grinding wheel according to any one of claims 1 to 3, comprising the following steps: S1: Add the modifier to an ethanol-water mixed solution, hydrolyze to obtain a hydrolysate of the modifier, add diamond to the hydrolysate, stir to react, and finally let stand to evaporate to obtain modified diamond. S2: Modified diamond, soft abrasive, and filler are mixed and sieved to obtain mixture A; S3: Crush the low-temperature glass powder, ball mill it, dry it, and sieve it to obtain mixture B; S4: Mix the pore-forming agent, mixture A and mixture B, and sieve to obtain mixture C; S5: Place the mixture C and the matrix into a mold and press them into shape; S6: Place the grinding wheel pressed in S5 in an oven and heat it to 600-700℃ at a heating rate of 1-5℃ / min. Hold it at that temperature for 12-24 hours and then cool it to room temperature to obtain the required grinding wheel blank. S7: The grinding wheel blank obtained in S6 is processed by machining the base body, inner and outer circles and dressing the grinding wheel layer to obtain the finished grinding wheel.

5. The preparation method according to claim 4, characterized in that, In step S1, the modifier includes at least one of tetramethoxysilane, trimethoxysilane, triethoxysilane, trimethoxypropylsilane, triethoxypropylsilane, vinyltrimethoxysilane, vinyltriethoxysilane, aminopropyltriethoxysilane, and mercaptopropyltriethoxysilane.

6. The preparation method according to claim 4, characterized in that, In step S1, the volume ratio of the modifier to the ethanol-water mixed solution is (1~4):(35~40); the volume ratio of ethanol to water in the ethanol-water mixed solution is (20~50):(50~80); the liquid-solid ratio of the modifier to diamond is (1~4):(10~30), and the unit of liquid-solid ratio is mL / g.

7. The preparation method according to claim 4, characterized in that, In step S1, the hydrolysis temperature is 45~60℃ and the hydrolysis time is 0.5-8 h; the stirring reaction temperature is 50-100℃ and the stirring reaction time is 0.5-8 h; the static evaporation temperature is 20~45℃ and the static evaporation time is 24-48 h.

8. The preparation method according to claim 4, characterized in that, In steps S2-4, the sieve is 100-200 mesh; in step S5, the pressing conditions are: pressure of 1-6 MPa, pressing temperature of 180-230℃, and holding time of 30-120 min.

9. An application of a silicon carbide wafer thinning grinding wheel as described in any one of claims 1 to 3, characterized in that, It is applied to chip backside thinning, substrate thinning, and laser-modified layer thinning in silicon carbide wafer processing.