Sintering device and sintering system for high-pressure sintering doping rod manufacturing
By using high -voltage sintering doping doped sintering devices and sintering systems in the optical fiber prefabricated rod process, the problem of low -doping concentration is solved, high concentration, uniform doping, reducing production costs, increasing the competitiveness of the product, the competitiveness of the product Essence
Patent Information
- Application Number
- CN202411484837.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-23
- Publication Date
- 2025-01-28
AI Technical Summary
The low doping concentration in the existing fiber preform process leads to poor fiber transmission performance and quality, and high production costs.
The sintering device and sintering system with high -voltage sintering doped sticks are used to provide high -pressure sintering atmosphere through double -layer cavity to achieve high concentration and uniform doping.
Improve the doping concentration and uniformity of the fiber prefabricated stick, reduce production costs, and enhance the competitiveness of the product.
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Figure CN119371094A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of manufacturing optical fiber preform rods, and in particular to a sintering device and a sintering system for high-pressure sintering doped rods. Background Art
[0002] The performance of optical fiber mainly depends on the waveguide structure design of the optical fiber preform. Therefore, during the preparation process of the optical fiber preform, different media and concentrations will be doped at different parts of the optical fiber preform in order to achieve the pre-designed optical fiber waveguide structure. Different doping positions and concentrations will affect the performance and quality of optical fiber transmission. The high-concentration and effective doping scheme determines the realization of optical fiber performance.
[0003] The doping schemes in the existing optical fiber preform process are mainly divided into four categories:
[0004] (1) Ex-tube deposition doping: During the implementation of this method, most of the doping medium will be drawn away by the existing process negative pressure. Therefore, the deposition doping efficiency is extremely low and the doping concentration is severely limited.
[0005] (2) In-tube deposition doping: During the implementation of this solution, the production size of the optical fiber preform product will be severely limited, resulting in low production efficiency and high unit production cost of the product.
[0006] (3) Sol-gel method of solution doping: This method involves solution during implementation, which will result in a high attenuation coefficient of the optical fiber preform product and a low doping efficiency, resulting in the optical fiber preform product having low quality competitiveness.
[0007] (4) Ordinary normal pressure sintering process doping. During the implementation of this scheme, on the one hand, the doping medium will be lost due to the lack of reaction, and the doping medium conversion rate is low; on the other hand, the axial and longitudinal doping of the optical fiber preform product will have poor uniformity due to the short hot zone design of the process itself, and there is also the problem of low doping efficiency.
[0008] As competition in the optical fiber communication industry intensifies, product requirements in terms of performance quality and production cost are becoming increasingly higher. Therefore, the leading degree of doping technology of optical fiber preform plays a vital role in product performance and cost leadership. Summary of the invention
[0009] The embodiments of the present application provide a sintering device and a sintering system for high-pressure sintering doped rods to solve the problem of low doping concentration in the related art.
[0010] In a first aspect, a sintering device for high pressure sintering doped rods is provided, comprising:
[0011] A nested cavity, the nested cavity comprising a first cavity and a second cavity, the second cavity being sleeved outside the first cavity and used for heating the powder rod in the first cavity;
[0012] A counterweight adjustment mechanism is installed on the first cavity, the counterweight adjustment mechanism and the first cavity form a first sealed space for accommodating powder sticks, and is used to adjust the counterweight force required for sealing the top of the first sealed space, and a guide rod is also provided on the counterweight adjustment mechanism;
[0013] Wherein, the first sealed space is provided with a first gas input pipe and a first gas exhaust pipe;
[0014] A second sealed space is formed between the second cavity and the first cavity, and the second sealed space is provided with a second gas input pipe and a second gas exhaust pipe.
[0015] In some embodiments, the weight adjustment mechanism includes:
[0016] A sealing cover plate, which is installed on the top of the first cavity;
[0017] A pressure cover plate, which is located above the sealing cover plate, and the guide rod is arranged through the sealing cover plate and the pressure cover plate;
[0018] An elastic member connected between the sealing cover plate and the pressure cover plate, and a first pressure sensor is also arranged on the elastic member;
[0019] A driving assembly is connected to the pressure cover plate and is used to drive the pressure cover plate to approach or move away from the sealing cover plate.
[0020] In some embodiments, the counterweight adjustment mechanism further comprises a vertically arranged guide rail, and the pressure cover plate is movably disposed on the guide rail;
[0021] The drive assembly comprises:
[0022] A transmission shaft, one end of which is rotatably connected to the sealing cover plate, and the other end of which is screwed to the pressure cover plate;
[0023] A driver is connected to the transmission shaft and is used to drive the transmission shaft to rotate forward or reverse.
[0024] In some embodiments, the sealing cover plate is made of graphite material and has a thickness of 5 to 10 mm;
[0025] The pressure cover plate is made of titanium alloy material and has a thickness of 5 to 10 mm.
[0026] In some embodiments, the first cavity is made of quartz material with a wall thickness of 2 to 10 mm.
[0027] In some embodiments, the second cavity includes a cavity body and a heating component disposed on an inner wall of the cavity body.
[0028] In some embodiments, the cavity body is made of graphite material with a thickness of 10 to 30 mm.
[0029] In a second aspect, a sintering system is provided, comprising:
[0030] In any of the above-mentioned sintering devices for high-pressure sintering and doping rod making, pressure relief valves are installed on the first gas exhaust pipe and the second gas exhaust pipe;
[0031] And, a gas pressure control device, which includes two gas pipelines connected to the first gas input pipe and the second gas input pipe respectively, the gas pipelines are connected to the gas source through a valve, and a second pressure sensor is also arranged on the gas pipeline.
[0032] In some embodiments, the first gas exhaust pipe and the second gas exhaust pipe are connected to an exhaust device.
[0033] In some embodiments, the sintering system further comprises a master control device, which is connected to the gas source, the second pressure sensor, the valve, the counterweight adjustment mechanism and the pressure relief valve.
[0034] The beneficial effects of the technical solution provided by this application include:
[0035] The embodiments of the present application provide a sintering device and a sintering system for high-pressure sintering and doping rods. The present application provides a high-pressure sintering and doping atmosphere through a double-layer cavity, which can achieve high-concentration and uniform doping under high-pressure sintering and doping process conditions, thereby improving the competitiveness of the product. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0037] Figure 1 A schematic diagram of a sintering device for high-pressure sintering and doping rod making provided in an embodiment of the present application;
[0038] Figure 2 A schematic diagram of a counterweight adjustment mechanism provided in an embodiment of the present application;
[0039] Figure 3 Schematic diagram of the waveguide structure provided in an embodiment of the present application.
[0040] In the figure: 1. first cavity; 2. second cavity; 3. powder rod; 4. counterweight adjustment mechanism; 5. first sealed space; 6. guide rod; 7. first gas input pipe; 8. first gas exhaust pipe; 9. second sealed space; 10. second gas input pipe; 11. second gas exhaust pipe; 12. sealing cover plate; 13. pressure cover plate; 14. elastic member; 15. first pressure sensor; 16. transmission shaft; 17. cavity body; 18. heating component; 19. gas pipeline; 20. valve; 21. exhaust device. DETAILED DESCRIPTION
[0041] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.
[0042] See also Figure 1 As shown, an embodiment of the present application provides a sintering device for high-pressure sintering doped rods, which includes a nested cavity and a counterweight adjustment mechanism 4, wherein the nested cavity includes a first cavity 1 and a second cavity 2, wherein the second cavity 2 is sleeved outside the first cavity 1 and is used to heat the powder rod 3 in the first cavity 1; the counterweight adjustment mechanism 4 is installed on the first cavity 1, and the counterweight adjustment mechanism 4 and the first cavity 1 form a first sealed space 5 for accommodating the powder rod 3, and are used to adjust the counterweight force required for the top sealing of the first sealed space 5 to achieve high-pressure sealing during the sintering process, and the counterweight adjustment mechanism 4 is also provided with a guide rod 6, which is used to install the powder rod 3; wherein the first sealed space 5 is provided with a first gas input pipe 7 and a first gas exhaust pipe 8, such as Figure 1 As shown, the first gas input pipe 7 passes through the second cavity 2 and the first cavity 1, and the first gas exhaust pipe 8 passes through the weight adjustment mechanism 4; a second sealed space 9 is formed between the second cavity 2 and the first cavity 1, and the second sealed space 9 is provided with a second gas input pipe 10 and a second gas exhaust pipe 11, such as Figure 1 As shown, the second gas input pipe 10 and the second gas exhaust pipe 11 pass through the second chamber 2 .
[0043] The sintering device provided in the embodiment of the present application adopts two cavities to form a double-layer cavity. The first sealed space 5 formed by the first cavity 1 and the counterweight adjustment mechanism 4 constitutes a reaction chamber for doping the powder rod 3, which is used to introduce different process gases at different process stages to provide a pure sintering atmosphere, and the second sealed space 9 formed by the second cavity 2 and the first cavity 1 is a chamber for heating and balancing pressure. The combination of the two realizes that the sintering device has high-pressure and pure reaction atmosphere conditions. The isobaric gas volume is introduced into the two sealed spaces through the first gas input pipe 7 and the second gas input pipe 10, so that the pressure inside and outside the first cavity 1 is the same, thereby solving the problem that the single-layer quartz cavity cannot withstand high pressure and breaks.
[0044] It can be seen that the present application provides a high-pressure sintering doping atmosphere through a double-layer cavity, and can achieve the purpose of high-concentration and uniform doping under the conditions of high-pressure sintering doping process. While improving product performance and quality, it also effectively reduces the use of doping media and process time, directly reduces production costs, and improves product competitiveness.
[0045] In order to achieve the counterweight force required for adjusting the top seal of the first sealed space 5, in some preferred examples, a specific structure of the counterweight adjustment mechanism 4 is provided, see Figure 1 and Figure 2 As shown, the counterweight adjustment mechanism 4 includes a sealing cover plate 12, a pressure cover plate 13, an elastic member 14, a first pressure sensor 15 and a driving assembly. The sealing cover plate 12 is installed on the top of the first cavity 1, the pressure cover plate 13 is located above the sealing cover plate 12, and the guide rod 6 is inserted through the sealing cover plate 12 and the pressure cover plate 13; the elastic member 14 is connected between the sealing cover plate 12 and the pressure cover plate 13, and the first pressure sensor 15 is also arranged on the elastic member 14; the driving assembly is connected to the pressure cover plate 13, and is used to drive the pressure cover plate 13 to approach or move away from the sealing cover plate 12.
[0046] The driving assembly drives the pressure cover plate 13 downward, causing the elastic member 14 to deform, thereby generating elastic force, so that the sealing cover plate 12 seals the first cavity 1 , achieving high-pressure reaction atmosphere conditions in the first sealed space 5 .
[0047] The elastic member 14 may be a common component such as a spring. The first pressure sensor 15 may record the pressure exerted by the elastic member 14 on the sealing cover plate 12 in real time.
[0048] The sealing cover plate 12 is made of graphite material and has a thickness of 5 to 10 mm;
[0049] The pressure cover plate 13 is made of titanium alloy material and has a thickness of 5 to 10 mm.
[0050] Further, see Figure 1 and Figure 2 As shown, the counterweight adjustment mechanism 4 also includes a vertically arranged guide rail, and the pressure cover plate 13 is movably disposed on the guide rail; the driving assembly includes a transmission shaft 16 and a driver, one end of the transmission shaft 16 is rotatably connected to the sealing cover plate 12, and the other end is screwed to the pressure cover plate 13; the driver is connected to the transmission shaft 16 and is used to drive the transmission shaft 16 to rotate forward or reverse.
[0051] The driver can use a motor, etc. The driver drives the transmission shaft to rotate around its own axis on the sealing cover plate 12, and the pressure cover plate 13 has a tendency to rotate synchronously. Since the guide rail is arranged vertically, under the action of the guide rail, the rotational movement of the pressure cover plate 13 is converted into vertical movement. By driving the transmission shaft 16 to rotate forward or reverse, the pressure cover plate 13 can be driven downward to increase the pressure, or driven upward to reduce the pressure.
[0052] Furthermore, the first cavity 1 is made of quartz material, with a wall thickness of 2 to 10 mm.
[0053] The second cavity 2 includes a cavity body 17 and a heating component 18 disposed on the inner wall of the cavity body 17. The cavity body 17 is made of graphite material and has a thickness of 10 to 30 mm.
[0054] See also Figure 1 As shown, the embodiment of the present application also provides a sintering system, which includes a sintering device and a gas pressure control device, and the first gas exhaust pipe 8 and the second gas exhaust pipe 11 are both equipped with a pressure relief valve; the gas pressure control device includes two gas pipelines 19 connected to the first gas input pipe 7 and the second gas input pipe 10 respectively, and the gas pipeline 19 is connected to the gas source through a valve 20. The gas pipeline 19 is also provided with a second pressure sensor to measure the pressure of the first sealed space 5 and the second sealed space 9. Through the input of the gas source, the purpose of equal pressure in the two sealed spaces can be achieved. The pressure control range is -500~2000pa.
[0055] It is understandable that during the high-pressure sintering doping process, different process gases will be introduced into the first sealed space 5 and the second sealed space 9 at different stages, so each gas pipeline 19 can be connected to multiple different gas sources through the valve 20, and the valve 20 can be adjusted to connect one or several gas sources.
[0056] Further, see Figure 1 As shown, the first gas exhaust pipe 8 and the second gas exhaust pipe 11 are connected to the exhaust device 21, which is used to collect the process waste gas discharged in the whole process flow to prevent the waste gas from polluting the environment and equipment. The above-mentioned exhaust device 21 can directly use existing equipment.
[0057] Furthermore, in order to realize automatic control, the sintering system further comprises a master control device, which is connected to the gas source, the second pressure sensor, the valve 20, the counterweight adjustment mechanism 4 and the pressure relief valve.
[0058] The master control device can adjust the amount of gas input from the gas source according to the pressure of the first sealed space 5 and the second sealed space 9 measured by the second pressure sensor to ensure that the pressures of the two sealed spaces are equal, and control the opening and closing of the valve 20 and the opening and closing of the pressure relief valve. The master control device can also adjust the pressure applied by the pressure cover plate 13 to the sealing cover plate 12 according to the pressure measured by the first pressure sensor 15 of the counterweight adjustment mechanism 4 and the pressure of the first sealed space 5.
[0059] When the sintering system provided in the present application is used for high-pressure doping and rod making, the following six process steps are mainly included: equipment flushing → pressure increase / temperature increase → high-pressure doping → flushing / temperature increase → normal pressure solidification → temperature reduction and cooling.
[0060] (1) Equipment flushing: After the powder rod enters the fixed position of the sintering device, it is left to stand. The process gas is introduced into the first sealed space for a fixed time to flush it to obtain a pure reaction atmosphere. The discharged flushing gas will be collected by the exhaust device to the waste gas treatment system to avoid pollution of the production environment. The process gas is introduced into the first sealed space for 10-30 minutes.
[0061] (2) Pressure increase / temperature increase: Pass pure process gas of equal pressure into the first sealed space and the second sealed space until the pressure point required by the doping process is reached. As the pressure in the first sealed space gradually increases, the above-mentioned counterweight adjustment mechanism will rotate the transmission shaft to deform the spring to generate the required elastic force, and cover the first sealed space with the sealing cover. While the gas is passed in, the heating component in the second sealed space begins to heat up to the doping process temperature point to provide the reaction heat required for the doping process step. The pressure point range required for the doping process is 1000-2000 Pa, and the temperature point range for the doping process is 1140-1300 ° C.
[0062] (3) High-pressure doping: After reaching the temperature and pressure points required for the doping process, a certain amount of doping medium gas is introduced, and the powder rod rotates in the first sealed space for a fixed doping process time. During this period, the powder rod does not need to perform other mechanical movements.
[0063] The fixed process time ranges from 20 to 60 minutes.
[0064] (4) Flushing / heating: After the powder rod completes the above high-pressure doping step, the pressure relief valve will open, and new process gas will continue to be introduced into the first sealed space for a fixed time to flush the waste gas after the reaction. The waste gas will be gradually discharged and collected by the exhaust device to the waste gas treatment system to avoid pollution of the production environment. While the gas is introduced, the heating component in the second sealed space begins to heat up to the curing process temperature point to provide the reaction heat required for the curing process step.
[0065] The curing process temperature ranges from 1490 to 1550°C.
[0066] (5) Normal pressure curing: After the above-mentioned flushing / heating steps reach the temperature and pressure points required for the curing process, the required process gas is continuously introduced, and the powder rod is rotated in the first sealed space to cure for a fixed process time. During this period, the powder rod does not need to perform other mechanical movements.
[0067] The fixed process time ranges from 60 to 180 minutes.
[0068] (6) Cooling: After the above-mentioned normal pressure curing step is completed, the heating component begins to cool down to the standby temperature, the powder rod is taken out, and the entire doped product preparation process is completed. The standby temperature range is 800-1000°C.
[0069] It can be seen that the sintering device provided by the present application has at least the following advantages:
[0070] First, by providing a high-pressure sintering doping atmosphere, a high-concentration doping effect can be effectively achieved.
[0071] Secondly, through the integrated heating design, the powder rod hovers and rotates in the cavity, which can effectively achieve the uniformity of overall doping.
[0072] Third, the pioneering high-pressure sintering doping process can quickly achieve the doping purpose, and the process time and formula flow rate are significantly reduced compared to traditional processes, achieving the beneficial effect of reducing production costs.
[0073] Fourthly, the counterweight adjustment mechanism provides pressure mechanically, so that the pressure can be adjusted steplessly, and finally realizes the stepless adjustment of the high-pressure atmosphere, which greatly facilitates the adjustment of process conditions.
[0074] Fifth, the present application is adapted to the normal pressure sintering doping process and the high pressure sintering doping process, and ultimately achieves the beneficial effect of high equipment utilization coverage.
[0075] Example
[0076] This embodiment uses the sintering system provided by the present application to not only realize the sintering doping process under normal pressure, but also realize the purpose of high concentration and uniform doping under high pressure sintering doping process conditions.2 F 6 As a doping medium, the preparation of G.657.A2 product is described.
[0077] Table 1- Specifications of powder sticks used
[0078] project unit Numeric Powder stick density <![CDATA[g / cm 3 ]]> 0.33 Powder rod outer diameter mm 280 Powder stick length mm 1800
[0079] Table 2 - High pressure sintering doping process parameters used
[0080]
[0081]
[0082] According to Table 1 and Table 2, the production process uses the following steps:
[0083] (1) After the powder rod enters the fixed position of the sintering device, it is left to stand. High-purity nitrogen is introduced into the first sealed space at a rate of 15 s lm for 15 min to obtain a pure reaction atmosphere.
[0084] (2) The temperature is raised to 1260°C, and at the same time, 10 s lm of high-purity helium is introduced into the first sealed space, and 20 s lm of high-purity nitrogen is introduced into the second sealed space. The counterweight adjustment mechanism and the gas pressure control device are used to adjust the pressure in the second sealed space in real time to ensure that the pressure reaches 1600 Pa.
[0085] (3) Maintaining the process conditions of 1260°C and 1600 Pa, 0.6 s lm of C 2 F 6 and 0.55slm of high-purity chlorine gas for 20 minutes, during which the powder rod maintains a rotation speed of 5rpm and begins doping.
[0086] (4) After the above doping step is completed, the first gas exhaust pipe and the second gas exhaust pipe are opened at the same time, and 15s lm of high-purity nitrogen and 6s lm of high-purity helium are introduced to flush the first sealed space for 10 minutes. After 10 minutes, the introduction of the inner layer of high-purity nitrogen is closed. During this period, the device is in the curing temperature heating stage, which takes 45 minutes to reach the curing process temperature point of 1510°C. The pressure of the entire device is controlled at 260Pa to complete the process steps of this stage.
[0087] (5) Maintaining the process conditions of 1510° C. and 260 Pa, the powder rod is rotated and solidified in the first sealed space for 180 min to obtain a doped optical fiber preform product.
[0088] (6) After the curing step is completed, the temperature is lowered to 850°C, and the powder rod is taken out, completing the entire doped product preparation process.
[0089] After the above process steps, the Figure 3 The optical fiber preform doped product of the waveguide structure shown in the figure has the lowest absolute refractive index curve of the doped product, which represents the doping concentration effect of the doping medium under high pressure conditions.
[0090] Table 3 Comparison of the effects of conventional sintering process and the process of the present invention
[0091]
[0092] From the results in Table 3 above, it can be seen that the process time of the scheme provided by the present application is much lower than that of the ordinary sintering and doping process, and the doping medium flow rate is also much lower than that of the ordinary sintering and doping flow rate, while the absolute refractive index depth of doping and the axial doping uniformity deviation are better than those of the ordinary sintering and doping schemes. It can be seen that the present application can achieve the purpose of high-concentration and uniform doping under the conditions of high-pressure sintering and doping process, thereby improving the competitiveness of the product.
[0093] In the description of the present application, it should be noted that the terms "upper", "lower", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. Unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be a connection between the two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to the specific circumstances.
[0094] It should be noted that, in this application, relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.
[0095] The above description is only a specific implementation of the present application, so that those skilled in the art can understand or implement the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein can be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest range consistent with the principles and novel features applied for herein.
Claims
1. A sintering device for high pressure sintering and doping rod making, characterized in that: It includes: A nested cavity, the nested cavity comprising a first cavity (1) and a second cavity (2), the second cavity (2) being arranged outside the first cavity (1) and used for heating a powder rod (3) in the first cavity (1); a counterweight adjustment mechanism (4) mounted on the first cavity (1); the counterweight adjustment mechanism (4) and the first cavity (1) form a first sealed space (5) for accommodating the powder stick (3), and is used to adjust the counterweight force required for sealing the top of the first sealed space (5); the counterweight adjustment mechanism (4) is also provided with a guide rod (6); Wherein, the first sealed space (5) is provided with a first gas input pipe (7) and a first gas discharge pipe (8); A second sealed space (9) is formed between the second cavity (2) and the first cavity (1), and the second sealed space (9) is provided with a second gas input pipe (10) and a second gas discharge pipe (11).
2. The sintering device for high pressure sintering doped rods according to claim 1, characterized in that: The counterweight adjustment mechanism (4) comprises: A sealing cover plate (12) mounted on the top of the first cavity (1); A pressure cover plate (13) is located above the sealing cover plate (12), and the guide rod (6) is inserted through the sealing cover plate (12) and the pressure cover plate (13); An elastic member (14) connected between the sealing cover plate (12) and the pressure cover plate (13), and a first pressure sensor (15) is also provided on the elastic member (14); A driving assembly is connected to the pressure cover plate (13) and is used to drive the pressure cover plate (13) to move closer to or away from the sealing cover plate (12).
3. The sintering device for high pressure sintering doped rods according to claim 2, characterized in that: The counterweight adjustment mechanism (4) further comprises a vertically arranged guide rail, and the pressure cover plate (13) is movably arranged on the guide rail; The drive assembly comprises: A transmission shaft (16), one end of which is rotatably connected to the sealing cover plate (12), and the other end of which is threadedly connected to the pressure cover plate (13); A driver is connected to the transmission shaft (16) and is used to drive the transmission shaft (16) to rotate forward or reverse.
4. The sintering device for high pressure sintering doped rods according to claim 2, characterized in that: The sealing cover plate (12) is made of graphite material and has a thickness of 5 to 10 mm; The pressure cover plate (13) is made of titanium alloy material and has a thickness of 5 to 10 mm.
5. The sintering device for high pressure sintering doped rods according to claim 1, characterized in that: The first cavity (1) is made of quartz material and has a wall thickness of 2 to 10 mm.
6. The sintering device for high pressure sintering doped rods according to claim 1, characterized in that: The second cavity (2) comprises a cavity body (17) and a heating component (18) arranged on the inner wall of the cavity body (17).
7. The sintering device for high pressure sintering doped rods according to claim 6, characterized in that: The cavity body (17) is made of graphite material and has a thickness of 10 to 30 mm.
8. A sintering system, characterized in that: It includes: The sintering device for high pressure sintering and doping rod making according to any one of claims 1 to 7, wherein the first gas exhaust pipe (8) and the second gas exhaust pipe (11) are both equipped with pressure relief valves; And, a gas pressure control device, comprising two gas pipelines (19) respectively connected to the first gas input pipe (7) and the second gas input pipe (10), wherein the gas pipelines (19) are connected to a gas source via a valve (20), and a second pressure sensor is also provided on the gas pipelines (19).
9. The sintering system according to claim 8, characterized in that: The first gas exhaust pipe (8) and the second gas exhaust pipe (11) are connected to an exhaust device (21).
10. The sintering system according to claim 8, characterized in that: The sintering system also includes a master control device, which is connected to the gas source, the second pressure sensor, the valve (20), the counterweight adjustment mechanism (4) and the pressure relief valve.