Liquid phase growth device and liquid phase growth method for improving semiconductor crystal quality

Abstract

The invention discloses a liquid phase growth device and a liquid phase growth method for improving the quality of a semiconductor crystal, and belongs to the technical field of semiconductor crystal preparation. The liquid phase growth device comprises a crucible capable of containing raw material liquid, the upper portion of the side wall of the crucible is provided with an annular liquid drop removing piece abutting against the side wall of the crucible, the melting point of the liquid drop removing piece is higher than the growth temperature of a semiconductor, and the wettability of at least the surface of the liquid drop removing piece and a raw material solution is larger than the wettability of semiconductor crystals and the raw material solution; the crystal supporting shaft can drive the semiconductor crystal to make contact with the liquid drop removing piece and drive the semiconductor crystal to rotate. According to the liquid phase growth device, the annular liquid drop removing part is arranged at the upper part of the side wall of the crucible, so that the semiconductor crystal can be driven to be in contact with the liquid drop removing part through the crystal supporting shaft after the growth of the semiconductor crystal is finished, and residual liquid drops on the surface of the grown semiconductor crystal are effectively removed; therefore, the P-type silicon carbide crystal with low dislocation and low stress is obtained.

Description

Technical Field

[0001] The present application relates to a liquid phase growth device and a liquid phase growth method for improving the quality of semiconductor crystals, and belongs to the technical field of semiconductor crystal preparation. Background Art

[0002] In the existing liquid phase method of growing SiC single crystals, since the solution and SiC single crystals have wettability, even if the crystal is separated from the solution after growth, there will still be droplets attached to the surface of the crystal. The droplets on the surface will cause three points of damage to the crystal: 1) Even if the crystal is separated from the solution, the area where the droplet contacts the crystal will still undergo local surface reconstruction at high temperature, resulting in uneven crystal morphology inside and outside the droplet, and local dislocation accumulation; 2) During the solidification process of the droplet from liquid to solid, the latent heat released locally will cause uneven temperature on the crystal, generating thermal stress; 3) After the droplet is completely solidified, there is a difference in thermal conductivity between the solid droplet and the crystal, so thermal stress will also be formed during the cooling process. Larger thermal stress often causes the crystal to crack near the residual droplet.

[0003] In the prior art, the influence of thermal stress is usually reduced by reducing the cooling rate or rotating the crystal after growth to try to remove the droplets. However, these techniques still have limitations, such as:

[0004] 1. Although reducing the cooling rate can reduce the impact of thermal stress to a certain extent, it cannot fundamentally eliminate thermal stress. In addition, excessively reducing the cooling rate will also increase the time cost;

[0005] 2. After the growth is completed, the centrifugal force caused by the rotation of the seed crystal axis can partially remove the droplets on the crystal surface. However, since the surface of the grown crystal is not atomically smooth, there are often large steps of tens of nanometers or even microns. These large steps will hinder the movement of the droplets. Therefore, it is difficult to completely remove the residual solution droplets by rotation.

[0006] In summary, the existing technology cannot effectively remove the residual droplets on the surface of the grown silicon carbide single crystal, and thus cannot obtain a low-dislocation, low-stress P-type silicon carbide crystal. Summary of the invention

[0007] In order to solve the above problems, a liquid phase growth device and a liquid phase growth method for improving the quality of semiconductor crystals are provided. The liquid phase growth device is provided with an annular droplet removal member on the upper part of the side wall of the crucible. After the semiconductor crystal grows in contact, the semiconductor crystal can be driven to contact the droplet removal member through the crystal support shaft to effectively remove residual droplets on the surface of the semiconductor crystal after growth, thereby obtaining a low dislocation, low stress P-type silicon carbide crystal.

[0008] According to one aspect of the present application, a liquid phase growth device for improving the quality of semiconductor crystals is provided, comprising:

[0009] A crucible capable of containing raw material liquid, wherein an annular droplet removal member abutting against the crucible side wall is provided on the upper part of the crucible side wall, wherein the melting point of the droplet removal member is higher than the growth temperature of the semiconductor, and at least the wettability of the surface of the droplet removal member to the raw material solution is greater than the wettability of the semiconductor crystal to the raw material solution;

[0010] The crystal supporting shaft is capable of driving the semiconductor crystal to contact the liquid droplet removing member and driving the semiconductor crystal to rotate.

[0011] Optionally, the droplet removal member includes a contact layer and a support layer from top to bottom, and the wettability of the contact layer to the raw material solution is greater than the wettability of the semiconductor crystal to the raw material solution.

[0012] Optionally, the material of the contact layer is selected from at least one of W, Nb, Ta, graphite and carbon-based thermal insulation felt;

[0013] The material of the support layer is selected from at least one of W, Nb, Ta and graphite.

[0014] Optionally, the vertical distance between the droplet removal element and the liquid surface of the initial raw material solution is 5-20 mm.

[0015] Optionally, the width of the droplet removal member is 0.25-0.5 times the diameter of the semiconductor crystal.

[0016] Optionally, the difference between the inner diameter of the droplet removal element and the diameter of the semiconductor crystal is 2-20 mm.

[0017] Optionally, the droplet removal member has a thickness of 1-10 mm.

[0018] Optionally, the semiconductor crystal is a conductive semiconductor crystal, a crucible shaft is provided under the crucible, a detection circuit is provided between the crucible shaft and the seed crystal support shaft, and when the crystal support shaft drives the semiconductor crystal to contact the droplet removal member, the detection circuit is in a conducting state.

[0019] According to another aspect of the present application, a liquid phase growth method for improving the quality of semiconductor crystals is provided, which is carried out using any of the liquid phase growth devices for improving the quality of semiconductor crystals described above. After the growth of the semiconductor crystal is completed, the crystal support shaft can drive the semiconductor crystal to contact the droplet removal component, and drive the semiconductor crystal to rotate to perform a droplet removal process on the surface of the semiconductor crystal, followed by a cooling process.

[0020] Optionally, the semiconductor crystal is a conductive semiconductor crystal, a crucible shaft is provided below the crucible, and a detection circuit is provided between the crucible shaft and the seed crystal supporting shaft.

[0021] After the growth of the semiconductor crystal is completed, the crystal support shaft drives the semiconductor crystal to contact the droplet removal component. When the detection circuit is in the on state, the axial downward movement of the crystal support shaft is stopped. Then the crystal support shaft drives the semiconductor crystal to rotate to perform the droplet removal process on the surface of the semiconductor crystal. After the residual droplets are removed, the cooling process is performed.

[0022] The beneficial effects of this application include but are not limited to:

[0023] 1. The liquid phase growth device of the present application can not only remove the residual droplets on the crystal surface after the semiconductor crystal growth is completed, thereby obtaining a low-dislocation, low-stress P-type silicon carbide crystal, but also improve the uniformity of the thermal field during the crystal growth process, so that the crystal quality is higher and the mass distribution is more uniform.

[0024] 2. In the liquid phase growth device of the present application, the detection circuit arranged between the crucible shaft and the seed crystal support shaft can timely feedback whether the crystal is in contact with the droplet removal component, thereby avoiding collision between the crystal and the droplet removal component, and improving the service life of the liquid phase growth device and the pass rate of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0026] Figure 1 This is a schematic diagram of the structure of a conventional semiconductor crystal liquid phase growth device.

[0027] Figure 2 This is a crystal image grown using a conventional semiconductor crystal liquid phase growth device.

[0028] Figure 3 It is a schematic diagram of the structure of the liquid phase growth device of the semiconductor crystal involved in this embodiment 1.

[0029] Figure 4 Schematic diagram of the structure of the droplet removal component involved in this embodiment 1.

[0030] Figure 5 It is a schematic diagram of the structure of the crucible and the droplet removal member involved in this embodiment 1.

[0031] Figure 6 This is a diagram of the operating steps for removing residual liquid droplets using the semiconductor crystal liquid phase growth apparatus involved in Example 1.

[0032] Figure 7 It is a schematic diagram of the structure of the semiconductor crystal liquid phase growth device with a detection circuit involved in Example 1 before and after the crystal contacts the droplet removal member.

[0033] List of parts and reference numerals:

[0034] 1. Crucible; 2. Droplet removal component; 21. Contact layer; 22. Support layer; 3. Crystal support axis; 4. Semiconductor crystal; 5. Raw material solution; 6. Residual droplets; 7. Support table. DETAILED DESCRIPTION

[0035] The present application is described in detail below with reference to embodiments, but the present application is not limited to these embodiments.

[0036] Unless otherwise specified, the raw materials in the examples of this application were purchased through commercial channels.

[0037] Unless otherwise specified, the methods used in the embodiments of the present application are conventional methods in the prior art.

[0038] refer to Figure 1 , which is a common semiconductor crystal liquid phase growth device. After the growth is completed, there are residual droplets on the surface of the semiconductor crystal. Taking silicon carbide single crystal as an example, if no droplet removal measures are taken, the crystal will be cooled directly after the growth is completed. Figure 2 , there are traces of residual droplets on the surface of the obtained silicon carbide single crystal. The black area on the left side of the picture is the solidified solution droplet, and a horizontal crack extends from the right side of the droplet to the center of the crystal.

[0039] Example 1

[0040] refer to Figure 3-7 The present embodiment relates to a liquid phase growth device for improving the quality of semiconductor crystal 4, comprising: a crucible 1 capable of accommodating raw material liquid, an annular droplet removal member 2 abutting against the side wall of the crucible 1 is arranged on the upper part of the side wall of the crucible 1, the melting point of the droplet removal member 2 is higher than the growth temperature of the semiconductor, and at least the wettability of the surface of the droplet removal member 2 with the raw material solution 5 is greater than the wettability of the semiconductor crystal 4 with the raw material solution 5; a crystal support shaft 3, the crystal support shaft 3 can drive the semiconductor crystal 4 to contact with the droplet removal member 2, and drive the semiconductor crystal 4 to rotate.

[0041] In the liquid phase growth device, an annular droplet removal member 2 is arranged on the upper part of the side wall of the original crucible 1. After the growth of the semiconductor crystal 4 is completed, the semiconductor crystal 4 can be driven to contact the droplet removal member 2 through the crystal support shaft 3. Since the wettability of the surface of the droplet removal member 2 with the raw material solution 5 is greater than that of the semiconductor crystal 4 with the raw material solution 5, the residual droplets 6 on the surface of the semiconductor crystal 4 can be adsorbed to the surface of the droplet removal member 2, thereby preventing the semiconductor crystal 4 from increasing dislocations and excessive stress due to the residual droplets 6, thereby obtaining a low-dislocation, low-stress P-type silicon carbide crystal, and the dislocation and stress distribution of the P-type semiconductor crystal 4 is more uniform. In addition, since the droplet removal member 2 is annular, it can generate uniform heat radiation to the raw material solution 5 in the crucible 1, so that the crystal growth part is heated more evenly, the crystal quality of the semiconductor crystal 4 is higher, and the dislocation and stress are lower.

[0042] Specifically, at least the surface of the droplet removal component 2 has a higher wettability to the raw material solution 5 than the semiconductor crystal 4 and the raw material solution 5. The droplet removal component 2 may be entirely made of a material whose wettability to the raw material solution 5 is higher than the semiconductor crystal 4 and the raw material solution 5, or only the surface of the droplet removal component 2 may be made of a material whose wettability to the raw material solution 5 is higher than the semiconductor crystal 4 and the raw material solution 5, and the remaining portion may be made of other materials. The material of the remaining portion needs to be a material whose melting point is above the growth temperature.

[0043] refer to Figure 4 As an embodiment, the droplet removal element 2 includes a contact layer 21 and a support layer 22 from top to bottom, and the wettability of the contact layer 21 to the raw material solution 5 is greater than the wettability of the semiconductor crystal 4 to the raw material solution 5.

[0044] Taking silicon carbide crystal as an example, the material used for the contact layer 21 needs to meet the following conditions: 1. The melting point is higher than the growth temperature of silicon carbide by liquid phase method; 2. The material has better wettability with the raw material solution 5 (generally Si and other metal co-solvents) than silicon carbide crystal. The material used for the support layer 22 only needs to meet the requirement of having a melting point higher than the growth temperature of silicon carbide by liquid phase method.

[0045] The materials of the contact layer 21 and the support layer 22 can be the same or different. If they are the same, the contact layer 21 and the support layer 22 can be formed as one piece. If they are different, the contact layer 21 and the support layer 22 can be directly abutted and installed in corresponding positions. The contact layer 21 is used to remove residual droplets 6 on the surface of the semiconductor crystal 4. The support layer 22 is used to provide support for the contact layer 21, thereby improving the support of the droplet removal component 2, avoiding the droplet removal component 2 from being offset or falling when the semiconductor crystal 4 contacts the droplet removal component 2, and improving the removal efficiency of the residual droplets 6.

[0046] As an embodiment, the total thickness of the droplet removal member 2 is 1-10 mm. This thickness can improve the stability of the droplet removal member 2 and reduce the influence of the droplet removal member 2 on the growth of the semiconductor crystal 4, thereby further improving the quality of the semiconductor crystal 4.

[0047] Specifically, the thickness of the contact layer 21 and the support layer 22 can be set as required, as long as the above functions can be exerted.

[0048] As a preferred embodiment, the material of the contact layer 21 is selected from at least one of W, Nb, Ta, graphite and carbon-based thermal insulation felt; the material of the support layer 22 is selected from at least one of W, Nb, Ta and graphite.

[0049] The above-mentioned material can not only realize the rapid removal of residual droplets 6 , but also improve the heating uniformity of the raw material solution 5 and the growth surface of the semiconductor crystal 4 , thereby further improving the growth quality of the semiconductor crystal 4 .

[0050] refer to Figure 3 As an embodiment, the vertical distance between the droplet removal member 2 and the liquid surface of the initial raw material solution 5 is 5-20 mm. The distance between the droplet removal member 2 and the initial raw material solution 5 can not only prevent the droplet removal member 2 from being wetted by the raw material solution 5, but also ensure uniform heat radiation to the raw material solution 5, improve the crystal growth quality of the semiconductor crystal 4, and reduce the thermal stress generated during the droplet removal process. If the distance is too close, the droplet removal member 2 is at risk of contacting the raw material solution 5. In addition, it is easy to cause the surface of the droplet removal member to be covered by the solution and fail to remove the residual droplets. The droplet removal member 2 may dissolve in the raw material solution 5, thereby introducing impurities into the raw material solution 5 and reducing the growth quality of the semiconductor crystal 4. If the distance is too far, the distance required to lift the grown semiconductor crystal 4 upward to the top of the droplet removal member 2 during the droplet removal process is too long. Since it is too far away from the liquid surface of the raw material solution 5, that is, the core high temperature zone, the temperature of the semiconductor crystal 4 will drop too fast during the lifting process, thereby generating greater stress in the semiconductor crystal 4.

[0051] Under normal circumstances, when the growth of the semiconductor crystal 4 is completed, the residual droplets 6 are not spread all over the surface of the semiconductor crystal 4, but most of them are distributed outside the 1 / 2 radius of the semiconductor crystal 4. Therefore, the width of the droplet removal element 2 can be set according to the distribution of the residual droplets 6 on the surface of different semiconductor crystals 4 to ensure that the residual droplets 6 are removed during the entire process of initial contact and rotational contact between the semiconductor crystal 4 and the droplet removal element 2.

[0052] For silicon carbide crystals, refer to Figure 3Assuming that the diameter of the semiconductor crystal 4 is X, the width of the droplet removal member 2 is 0.25-0.5 times the diameter X of the semiconductor crystal 4. This width can not only ensure the efficient removal of the residual droplets 6, but also reduce the size of the droplet removal member 2 and the crucible 1, saving production costs.

[0053] When the semiconductor crystal 4 is grown in liquid phase, the crystal support shaft 3 and the crucible 1 are arranged on the same central axis to ensure that the growth surface of the semiconductor crystal 4 is heated evenly. Since the droplet removal member 2 is annular, the droplet removal member 2 is also arranged on the same central axis as the crystal support shaft 3 during the growth process. After the growth of the semiconductor crystal 4 is completed, the crystal support shaft 3 is required to lift the semiconductor crystal 4 and move the grown semiconductor crystal 4 to the top of the droplet removal member 2 for removal. Therefore, in order to ensure that the semiconductor crystal 4 and the droplet removal member 2 do not collide during the lifting process, the droplet removal member 2 needs to maintain a safe distance from the semiconductor. Figure 3 A safety distance Y is set between the inner diameter of the droplet removal member 2 and the outer diameter of the semiconductor crystal 4, the value of Y is 1-10mm, and the difference between the inner diameter of the entire droplet removal member 2 and the diameter of the semiconductor crystal 4 is 2-20mm. Under the above setting, the inner diameter of the crucible 1 is equal to the outer diameter of the annular droplet removal member 2, which is 1.5X+2Y to 2X+2Y.

[0054] Specifically, the liquid drop removal member 2 can be arranged on the upper part of the side wall of the crucible 1 in a conventional installation manner, for example, Figure 5 (a), a support platform 7 may be provided at a corresponding position of the side wall of the crucible 1, and the droplet removal member 2 may be placed above the support platform 7 and abut against the side wall of the crucible 1; Figure 5 (b) The upper portion of the crucible 1 is set as an outwardly inclined side surface, and the portion where the droplet removal member 2 contacts the upper portion of the crucible 1 is set as an inwardly inclined side surface, and the two can be abutted and fixed by the inclined side surfaces.

[0055] refer to Figure 6 , after the semiconductor crystal 4 is grown, the first step is to refer to Figure 6 (a), the crystal support shaft 3 drives the semiconductor crystal 4 to rise to a position higher than the droplet removal member 2; the second step refers to Figure 6 (b), the crystal support shaft 3 drives the semiconductor crystal 4 and approaches the inner wall of the crucible 1, and then drives the semiconductor crystal 4 to slowly descend, so that the surface of the semiconductor crystal 4 contacts the droplet removal member 2 but does not collide with it, and then the crystal support shaft 3 rotates to remove the droplets; the third step refers to Figure 6(c), the crystal support shaft 3 drives the semiconductor crystal 4 back to the position with the same central axis as the crucible 1 for cooling. The distance that the seed crystal support shaft drives the semiconductor crystal 4 to approach the inner wall of the crucible 1 can be calculated based on the size of the seed crystal, the size of the droplet removal member 2 and the size of the crucible 1, and the setting of the distance can be realized through a preset program; the distance that the seed crystal support shaft drives the semiconductor crystal 4 to descend, in the original process, the thickness of the semiconductor crystal 4 grown each time is roughly the same, so the distance can be adjusted based on the distance the semiconductor crystal 4 was lifted in the early stage and the estimated thickness of the semiconductor crystal 4, and the preset program can also be used.

[0056] refer to Figure 7 In order to determine whether the residual droplets 6 are in contact with the droplet removal member 2, the liquid phase growth device also needs to have a current detection function. When the semiconductor crystal 4 grown by the liquid phase method is a conductive semiconductor crystal 4, a crucible 1 axis is arranged under the crucible 1, and a detection circuit is arranged between the crucible 1 axis and the seed crystal support axis. When the crystal support axis 3 drives the semiconductor crystal 4 to contact the droplet removal member 2, the detection circuit is in a conductive state.

[0057] Under this setting, when the growing semiconductor crystal 4 is separated from the solution and the residual droplets 6 on the surface are not in contact with the droplet removal member 2, Figure 7 (a), the circuit is in the disconnected state, and there is no indication on the ammeter; when the residual droplet 6 contacts the droplet removal member 2, the reference Figure 7 (b), the circuit is in the on state, and the ammeter shows a value. At this time, the downward movement of the crystal support shaft 3 should be stopped immediately to avoid the semiconductor crystal 4 from colliding with the droplet removal member 2. The above arrangement can achieve accurate control of the descending distance of the semiconductor crystal 4, improve the safety of the growth device and improve the crystal qualification rate.

[0058] Example 2

[0059] The present embodiment relates to a liquid phase growth method for improving the quality of semiconductor crystals, which is carried out using the liquid phase growth device in Example 1. In the liquid phase growth method, after the growth of the conductor crystal is completed, the crystal support shaft can drive the semiconductor crystal to contact the droplet removal member, and drive the semiconductor crystal to rotate to perform a droplet removal process on the surface of the semiconductor crystal, and then perform a cooling process.

[0060] When the liquid phase growth device has the above-mentioned current detection function, in the liquid phase growth method, after the growth of the semiconductor crystal is completed, the crystal support shaft drives the semiconductor crystal to contact the droplet removal component. When the detection circuit is in the on state, the axial downward movement of the crystal support shaft is stopped, and then the crystal support shaft drives the semiconductor crystal to rotate to perform the droplet removal process on the surface of the semiconductor crystal.

[0061] The operation of the above-mentioned liquid phase growth method mainly lies in the liquid droplet removal process after the semiconductor crystal grows. The processes before, during and after the growth of the semiconductor crystal can all refer to the existing methods in the prior art.

[0062] The following takes silicon carbide crystal as an example to explain the main steps of the liquid phase growth method:

[0063] (1) Preliminary preparation: Install the droplet removal device at the designated position, then fix the crucible on the tray at the lower end of the crystal growth furnace, evenly place the polysilicon material and the flux into the crucible, cover the crucible, keep the sides and top of the crucible warm, fix the seed crystal on the crystal support shaft, close the crystal growth furnace cavity, and place the seed crystal and the crucible at a predetermined height;

[0064] (2) Heating: Evacuate the crucible, then introduce an inert gas protection, the inert gas is argon, helium or neon, the gas pressure is 1E4-1E5Pa, and then heat the crucible to a temperature of 1700-2000°C;

[0065] (3) Seed crystal contact: After reaching the growth temperature, the seed crystal is controlled to lower its position and contact with the raw material solution;

[0066] (4) Growth stage: The seed crystal is pulled up 1-5 mm to form a meniscus with the surface of the raw material solution and start growing;

[0067] (5) Droplet removal stage: reference Figure 4 , pull the crystal to separate it from the liquid surface, and then carry out the aforementioned droplet removal process;

[0068] (6) Cooling and furnace opening stage: Turn off the heating unit, wait for the temperature in the furnace chamber to cool down, open the furnace chamber, and take out the crystal.

[0069] The auxiliary solvent used in the above preparation is selected from at least one of Ti, Cr, Sc, Ni, Al, Co, Mn, Mg, Ge, As, Dy, Y, Nb, Nd or Fe. The amount of the auxiliary solvent added accounts for 30%-70% of the total molar number in the solution.

[0070] The following silicon carbide crystals were prepared by the above preparation method. The specific parameters and the differences in the properties of the prepared silicon carbide crystals are shown in Table 1. Compared with silicon carbide crystal 1#, the comparative silicon carbide crystal D1# in Table 1 does not include step (5). After the crystal growth in step (4) is completed, the cooling and furnace opening stage of step (6) is carried out.

[0071] Table 1

[0072]

[0073] In Table 1, P1 represents the average value of BPD density within 2 / 3 radius of the substrate including the growth surface prepared from the P-type silicon carbide crystal, P2 represents the average value of BPD density within 2 / 3 radius of all silicon carbide substrates prepared from the P-type silicon carbide crystal, and P3 represents the average value of BPD density within any 1 cm radius of the silicon carbide substrate including the growth surface. 2 P4 represents the maximum value of the BPD density in the area, P4 represents the average BPD density of the entire silicon carbide substrate including the growth surface, X1 represents the average XRD half-width of the substrate including the growth surface prepared from the P-type silicon carbide crystal, X2 represents the average of the average XRD half-width of all silicon carbide substrates prepared from the P-type silicon carbide crystal, and X3 represents the XRD half-width at any position of the silicon carbide substrate including the growth surface.

[0074] According to the data in Table 1 above, it can be seen that the crystal obtained by removing the residual droplets on the crystal surface using a droplet removal member and then cooling the crystal has good quality, low dislocation and thermal stress, and more uniform distribution of dislocation and thermal stress.

[0075] In the above-mentioned embodiments 1 and 2 of the present application, the case of growing silicon carbide crystals is described, but it is not limited to this form. The liquid phase growth device and liquid phase growth method of this specification are applicable to all crystals that can be grown by solution method. For example, it can be applied to crystal growth systems such as single crystal silicon (Si), sapphire (α-Al2O3), tellurium dioxide (TeO2), bismuth germanate (Bi4Ge3O12), etc.

[0076] The above is only the embodiment of the present application, and the protection scope of the present application is not limited by these specific embodiments, but is determined by the claims of the present application. For those skilled in the art, the present application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the technical ideas and principles of the present application should be included in the protection scope of the present application.

Claims

1. A liquid phase growth device for improving the quality of semiconductor crystals, characterized in that: include: A crucible capable of containing raw material liquid, wherein an annular droplet removal member abutting against the crucible side wall is provided on the upper part of the crucible side wall, wherein the melting point of the droplet removal member is higher than the growth temperature of the semiconductor, and at least the wettability of the surface of the droplet removal member to the raw material solution is greater than the wettability of the semiconductor crystal to the raw material solution; The crystal supporting shaft is capable of driving the semiconductor crystal to contact the liquid droplet removing member and driving the semiconductor crystal to rotate.

2. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The droplet removal member comprises a contact layer and a support layer from top to bottom, and the wettability of the contact layer to the raw material solution is greater than the wettability of the semiconductor crystal to the raw material solution.

3. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 2, characterized in that: The material of the contact layer is selected from at least one of W, Nb, Ta, graphite and carbon-based thermal insulation felt; The material of the support layer is selected from at least one of W, Nb, Ta and graphite.

4. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The vertical distance between the droplet removal element and the liquid surface of the initial raw material solution is 5-20 mm.

5. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The width of the droplet removal member is 0.25-0.5 times the diameter of the semiconductor crystal.

6. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The difference between the inner diameter of the droplet removal member and the diameter of the semiconductor crystal is 2-20 mm.

7. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The thickness of the droplet removal member is 1-10 mm.

8. The liquid phase growth device for improving the quality of semiconductor crystal according to claim 1, characterized in that: The semiconductor crystal is a conductive semiconductor crystal. A crucible shaft is arranged below the crucible. A detection circuit is arranged between the crucible shaft and the seed crystal support shaft. When the crystal support shaft drives the semiconductor crystal to contact the droplet removal member, the detection circuit is in a conducting state.

9. A liquid phase growth method for improving the quality of semiconductor crystals, characterized in that: It is carried out using a liquid phase growth device for improving the quality of semiconductor crystals as described in any one of claims 1 to 8. After the growth of the semiconductor crystal is completed, the semiconductor crystal can be driven to contact the droplet removal component through the crystal support shaft, and the semiconductor crystal is driven to rotate to perform a droplet removal process on the surface of the semiconductor crystal, followed by a cooling process.

10. The liquid phase growth method for improving the quality of semiconductor crystal according to claim 9, characterized in that: The semiconductor crystal is a conductive semiconductor crystal, a crucible shaft is arranged below the crucible, and a detection circuit is arranged between the crucible shaft and the seed crystal supporting shaft. After the growth of the semiconductor crystal is completed, the crystal support shaft drives the semiconductor crystal to contact the droplet removal component. When the detection circuit is in the on state, the axial downward movement of the crystal support shaft is stopped. Then the crystal support shaft drives the semiconductor crystal to rotate to perform the droplet removal process on the surface of the semiconductor crystal. After the residual droplets are removed, the cooling process is performed.

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