A single crystal growth furnace

Abstract

The present invention relates to the field of single crystal technology, and discloses a single crystal growth furnace, including a housing. An electromagnetic limit sleeve is movably sleeved outside the housing. A mounting plate is fixedly connected to the side surface of the electromagnetic limit sleeve. A first mounting bracket is installed outside the side surface of the electromagnetic limit sleeve through a fastening bolt. A telescopic rod is installed inside the first mounting bracket. The top of the telescopic rod is installed with a second mounting bracket. An extension column is fixedly connected to the inner side of the second mounting bracket. An upper cover is fixedly connected to the lower part of the extension column. A first gear is sleeved and installed on the upper part of the extension column. In this single crystal growth furnace, an electromagnetic limit sleeve is installed outside the housing, and an electromagnet is installed inside the electromagnetic limit sleeve in alignment to detect the temperature change of the crystallization raw material inside the housing and control the magnetic field of the electromagnet, that is, use the magnetic field to change the temperature, so as to ensure the stability during the crystallization of the raw material and improve the crystallization quality.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal, and specifically to a single crystal growth furnace. Background Technique

[0002] Crystals are formed under the condition of phase transformation. There are three phases, namely gas phase, liquid phase and solid phase. Only crystals are real solids; crystals are formed when the gas phase or liquid phase transforms into the solid phase, and direct transformation can also occur between solid phases; the general process of crystal formation is to first generate crystal nuclei and then gradually grow, so a single crystal growth furnace is needed to assist in its preparation.

[0003] Specifically, during the crystallization process of the material, the crystallization of the single crystal in the growth furnace is interfered by temperature, and the crystallization is carried out in a uniform crystallization manner around the crystallization column. When the local temperature of the material changes, it will cause the phenomenon that the material at the local position crystallizes too fast or too slow, resulting in the phenomenon of concave or convex of the single crystal structure, and then affecting the quality of the single crystal. For this reason, we propose a single crystal growth furnace. Summary of the Invention

[0004] Aiming at the deficiencies of the existing single crystal growth furnaces, the present invention provides a single crystal growth furnace. An electromagnet is installed outside the outer shell. By controlling the magnetic field, the electromagnet can be at the crystallization temperature, and the crystallization rod and the crystallization furnace are crystallized in a reverse rotation manner to ensure the crystallization efficiency, solving the problems raised in the above background technique.

[0005] The present invention provides the following technical solutions: A single crystal growth furnace, including an outer shell, an electromagnetic limit sleeve is movably sleeved outside the outer shell, a mounting plate is fixedly connected to the side of the electromagnetic limit sleeve, a first mounting frame is installed outside the side of the electromagnetic limit sleeve through a fastening bolt, a telescopic rod is installed inside the first mounting frame, a second mounting frame is installed at the top of the telescopic rod, an extension column is fixedly connected to the inner side of the second mounting frame, an upper cover is fixedly connected to the lower part of the extension column, a first gear is sleeved on the upper part of the extension column, a first hydraulic telescopic device is fixedly connected to the upper part of the first gear, a crystallization rod is installed inside the first hydraulic telescopic device, a heating layer is installed inside the outer shell, a temperature conduction pipe is installed inside the heating layer, a movable sleeve is movably sleeved inside the lower end of the outer shell, a connecting column is movably sleeved in the middle of the movable sleeve, a second hydraulic telescopic device is sleeved outside the lower end of the connecting column, and a crystallization furnace is fixedly connected to the upper part of the connecting column.

[0006] Preferably, a positioning pin is installed inside the mounting plate, and the electromagnetic limit sleeve is semicircular.

[0007] Preferably, a set of electromagnets are installed on both sides of the electromagnetic limit sleeve. A set of electromagnets are installed on both sides of the electromagnetic limit sleeve. An electromagnetic induction coil is installed inside the electromagnet. At the same time, a temperature detector is arranged inside the housing.

[0008] Preferably, both sides of the first mounting bracket are sleeved on the side of the mounting plate. At the same time, the fastening bolt passes through the first mounting bracket and extends into the interior of the mounting plate. The telescopic rod is parallel to the housing.

[0009] Preferably, the extension column drives the upper cover to be arranged directly above the housing. The upper cover is sleeved outside the upper end of the housing.

[0010] Preferably, the crystallization rod is horizontally and vertically installed inside the second mounting bracket. A single crystal is installed at the lower part of the crystallization rod. The single crystal is arranged inside the crystallization furnace.

[0011] Preferably, a first motor is installed on the side of the first gear. The first motor is arranged on the side of the extension column.

[0012] Preferably, an arc-shaped opening is formed at the upper end of the temperature transfer pipe. At the same time, a conical air outlet is installed at the lower end of the temperature transfer pipe. The air outlet is arranged at the lower end of the crystallization furnace.

[0013] Preferably, the connecting column is sleeved inside the movable sleeve. A second gear is fixedly connected to the lower part of the connecting column. A tooth column is installed on one side of the lower part of the housing. The second gear is meshed with the tooth column. At the same time, a motor is installed at one end of the tooth column.

[0014] Compared with the existing single crystal growth furnace, the present invention has the following beneficial effects:

[0015] 1. For this single crystal growth furnace, an electromagnetic limit sleeve is installed outside the housing. At the same time, electromagnets are aligned and installed inside the electromagnetic limit sleeve to detect the temperature change of the crystallization raw material inside the housing and control the magnetic field of the electromagnets, that is, use the magnetic field to change the temperature, so as to ensure the stability during the crystallization of the raw material and improve the crystallization quality.

[0016] 2. For this single crystal growth furnace, the temperature transfer pipe is arranged inside the housing. The top of the temperature transfer pipe drives heat absorption, and the absorbed heat is transmitted to the lower end, ensuring that the heat circulates inside the housing, improving the heat utilization rate.

[0017] 3. For this single crystal growth furnace, by starting the first motor, the first gear can be driven to rotate. At the same time, by starting the first hydraulic telescopic device, the crystallization rod can be driven to move upward. At the same time, by starting the tooth column, the crystallization furnace can be driven to rotate, that is, during the crystallization process of the raw material and the crystallization rod, they remain in a rotating state, thereby improving the coating efficiency of the crystallization product outside the crystallization rod and improving the crystallization effect. Description of the Drawings

[0018] Figure 1 This is a schematic diagram of the main structure of the present invention;

[0019] Figure 2 This is a schematic diagram of the back view structure of the main body of the present invention;

[0020] Figure 3 This is a schematic diagram of the sectional view structure of the main body of the present invention;

[0021] Figure 4 This is a schematic diagram of the partially enlarged structure of the electromagnetic device of the present invention;

[0022] Figure 5 This is a schematic diagram of the enlarged structure at position A of the present invention;

[0023] Figure 6 This is a schematic diagram of the enlarged structure at position B of the present invention.

[0024] In the figure: 1. Outer shell; 2. Electromagnetic limit sleeve; 3. Mounting plate; 4. Positioning pin; 5. Electromagnet; 6. First mounting bracket; 7. Fastening bolt; 8. Telescopic rod; 9. Second mounting bracket; 10. Extension column; 11. Upper cover; 12. First gear; 13. First hydraulic telescopic device; 14. Crystal rod; 15. Single crystal; 16. First motor; 17. Heating layer; 18. Temperature conduction pipe; 19. Movable sleeve; 20. Connecting column; 21. Second hydraulic telescopic device; 22. Crystal furnace; 23. Second gear; 24. Tooth column. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0026] Please refer to Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 and Figure 6, a single crystal growth furnace, comprising a housing 1. An electromagnetic limit sleeve 2 is movably sleeved outside the housing 1. The electromagnetic limit sleeve 2 is wrapped and installed outside the housing 1. A mounting plate 3 is fixedly connected to the side of the electromagnetic limit sleeve 2. The mounting plate 3 drives the electromagnetic limit sleeve 2 for splicing and installation. A first mounting frame 6 is installed outside the side of the electromagnetic limit sleeve 2 through a fastening bolt 7. An expansion rod 8 is installed inside the first mounting frame 6. The expansion rod 8 drives the height of an extension column 10 to be adjusted, facilitating the opening of the upper cover 11. The top end of the expansion rod 8 is provided with a second mounting frame 9. The inner side of the second mounting frame 9 is fixedly connected to an extension column 10. The lower part of the extension column 10 is fixedly connected to an upper cover 11. The upper part of the extension column 10 is sleeved and installed with a first gear 12. The upper part of the first gear 12 is fixedly connected to a first hydraulic telescopic device 13. The first hydraulic telescopic device 13 drives the height of a crystal rod 14 to be adjusted. The crystal rod 14 is installed inside the first hydraulic telescopic device 13. A heating layer 17 is installed inside the housing 1. The heating layer 17 drives the interior of the housing 1 for heat treatment. A temperature conduction pipe 18 is installed inside the heating layer 17. The hot air generated after the interior of the housing 1 is heated by the temperature conduction pipe 18 will leak to the lower end, improving the energy utilization rate. An activity sleeve 19 is movably sleeved inside the lower end of the housing 1. A connecting column 20 is movably sleeved in the middle of the activity sleeve 19. A second hydraulic telescopic device 21 is sleeved outside the lower end of the connecting column 20. The upper part of the connecting column 20 is fixedly connected to a crystal furnace 22. The crystal furnace 22 drives the material to be heated and melted.

[0027] Reference Figure 4 , a positioning pin 4 is installed inside the mounting plate 3. The electromagnetic limit sleeve 2 is semicircular. By making the electromagnetic limit sleeve 2 circular, two groups of electromagnetic limit sleeves 2 are sleeved and installed outside the housing 1. The positioning pin 4 passes through the inside of the mounting plate 3, that is, the positioning pin 4 squeezes and limits the position of the mounting plate 3, improving the stability when the electromagnetic limit sleeve 2 is spliced and limited at the external position of the housing 1.

[0028] Reference Figure 4 , a group of electromagnets 5 are respectively installed on both sides of the electromagnetic limit sleeve 2. A group of electromagnets 5 are respectively installed on both sides of the electromagnetic limit sleeve 2. An electromagnetic induction coil is installed inside the electromagnet 5. At the same time, a temperature detector is arranged inside the housing 1. By installing the electromagnet 5 inside the electromagnetic limit sleeve 2, the electromagnet 5 can be limited inside the electromagnetic limit sleeve 2, improving the convenience when the electromagnet 5 is disassembled and replaced. At the same time, according to the different crystallization states of silicon elements inside the crystal furnace 22, the magnetic field can be changed. By changing the magnetic field, the heating stability can be controlled to ensure the convenience during temperature regulation and ensure the crystallization efficiency.

[0029] Reference Figure 5, both sides of the first mounting bracket 6 are sleeved and installed on the side of the mounting plate 3. At the same time, the fastening bolt 7 passes through the first mounting bracket 6 and extends into the interior of the mounting plate 3. The telescopic rod 8 is parallel to the housing 1. By controlling the first mounting bracket 6 to be sleeved and installed outside the mounting plate 3, and at the same time using the fastening bolt 7 to limit the position of the first mounting bracket 6 outside the mounting plate 3, the stability of the first mounting bracket 6 is improved when it is limited, and at the same time, the position of the mounting plate 3 is strengthened.

[0030] Reference Figure 3 , the extension column 10 drives the upper cover 11 to be arranged directly above the housing 1. The upper cover 11 is sleeved outside the upper end of the housing 1. By telescopically adjusting the telescopic rod 8, the height of the extension column 10 driven by the telescopic rod 8 is adjusted. That is, when controlling the opening or closing of the upper cover 11, the convenience is improved.

[0031] Reference Figure 3 , the crystallization rod 14 is horizontally and vertically installed inside the second mounting bracket 9. A single crystal 15 is installed at the lower part of the crystallization rod 14. The single crystal 15 is arranged inside the crystallization furnace 22. The crystallization rod 14 is installed inside the first hydraulic telescopic device 13. The first hydraulic telescopic device 13 controls the telescopic movement of the crystallization rod 14. That is, it controls the bottom end of the crystallization rod 14 to contact the melt inside the crystallization furnace 22. At the same time, silicon elements can crystallize into a single crystal 15 at the lower end of the crystallization rod 14.

[0032] Reference Figure 2 , a first motor 16 is installed on the side of the first gear 12. The first motor 16 is arranged on the side of the extension column 10. By starting the first motor 16, the first motor 16 drives the first gear 12 to rotate. The first gear 12 drives the crystallization rod 14 to rotate. That is, when performing crystallization treatment on the single crystal 15, the rotation of the crystallization rod 14 drives the crystallization of the material, improving the crystallization efficiency of the material.

[0033] Reference Figure 3 , an arc-shaped opening is provided at the upper end of the temperature conduction pipe 18. At the same time, a conical air outlet is installed at the lower end of the temperature conduction pipe 18. The air outlet is arranged at the lower end of the crystallization furnace 22. By arranging the temperature conduction pipe 18 inside the housing 1, the heating layer 17 is controlled to heat and melt the material inside the crystallization furnace 22. At the same time, the upper end of the temperature conduction pipe 18 is arranged at the upper part of the crystallization furnace 22. The heat generated by the heating of the crystallization furnace 22 will be transmitted into the interior of the temperature conduction pipe 18. Under the guidance of the temperature conduction pipe 18, the hot air is driven to be transported downward. That is, the heat circulates inside the housing 1, improving the heat utilization rate.

[0034] Reference Figure 3, the connecting column 20 is sleeved and installed inside the movable sleeve 19. A second gear 23 is fixedly connected to the lower part of the connecting column 20. A tooth column 24 is installed on one side of the lower part of the outer shell 1. The second gear 23 and the tooth column 24 are meshed with each other. At the same time, a motor is installed at one end of the tooth column 24. By starting the motor installed outside the tooth column 24, the motor drives the threaded movement between the tooth column 24 and the second gear 23. That is, during the crystallization process, the crystallization furnace 22 rotates synchronously. During the rotation of the crystallization furnace 22, the crystallization efficiency can be improved, and the crystallization can be avoided from being uneven during crystallization.

[0035] Working principle: When in use, the inside of the crystallization furnace 22 is filled with raw materials. At the same time, the heating layer 17 is started, and the heating layer 17 drives the raw materials inside the crystallization furnace 22 to be heated. At the same time, the heat generated by the heating is guided to the lower end through the temperature transfer pipe 18 to improve the heat utilization rate. At the same time, the telescopic rod 8 is started to control the upper cover 11 to be sealed on the upper part of the outer shell 1, and the first hydraulic telescopic device 13 drives the crystallization rod 14 to extend into the crystallization furnace 22. The crystallization rod 14 contacts the raw materials. At the same time, the first motor 16 and the tooth column 24 are started, that is, the crystallization rod 14 and the crystallization furnace 22 are driven to rotate in opposite directions synchronously. The crystallization adheres to the outside of the crystallization rod 14 and forms a single crystal 15 by coating. And during the crystallization process, the first hydraulic telescopic device 13 is started to control the crystallization rod 14 to move upward, that is, the crystallization extends upward in a cylindrical shape. And a temperature detection device is arranged inside the outer shell 1 to detect the heating temperature of the raw materials inside the crystallization furnace 22. According to the requirements, the electromagnet 5 is started, and the electromagnet 5 controls the heating magnetic field to change to ensure the uniformity of the temperature during heating and improve the crystallization efficiency of the equipment.

[0036] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A single crystal growth furnace, comprising a housing (1), an outer movably sleeved electromagnetic limit sleeve (2) on the housing (1), a side of the electromagnetic limit sleeve (2) fixedly connected to a mounting plate (3), characterized in that: A first mounting frame (6) is mounted on the outside of the side of the electromagnetic limit sleeve (2) via a fastening bolt (7); a telescopic rod (8) is mounted inside the first mounting frame (6); a second mounting frame (9) is mounted on the top of the telescopic rod (8); an extension column (10) is fixedly connected to the inside of the second mounting frame (9); a top cover (11) is fixedly connected to the bottom of the extension column (10); a first gear (12) is sleeved and mounted on the top of the extension column (10); and a first hydraulic telescopic device is fixedly connected to the top of the first gear (12). (13), a crystallization rod (14) is installed inside the first hydraulic telescopic device (13), a heating layer (17) is installed on the inner side of the outer shell (1), a temperature conduction tube (18) is installed on the inner side of the heating layer (17), a movable sleeve (19) is movably sleeved inside the lower end of the outer shell (1), a connecting column (20) is movably sleeved in the middle of the movable sleeve (19), a second hydraulic telescopic device (21) is sleeved outside the lower end of the connecting column (20), and a crystallization furnace (22) is fixedly connected to the upper part of the connecting column (20).

2. A single crystal growth furnace according to claim 1, characterized in that: A positioning pin (4) is installed inside the mounting plate (3), and the electromagnetic limiting sleeve (2) is semicircular.

3. A single crystal growth furnace according to claim 1, characterized in that: A group of electromagnets (5) are respectively installed on both sides of the electromagnetic limit sleeve (2), and an electromagnetic induction coil is installed inside the electromagnet (5). A temperature detector is also arranged inside the housing (1).

4. A single crystal growth furnace according to claim 1, characterized in that: The two sides of the first mounting frame (6) are sleeved and mounted on the side surfaces of the mounting plate (3), while the fastening bolts (7) pass through the first mounting frame (6) and extend into the interior of the mounting plate (3), and the telescopic rod (8) remains parallel to the housing (1).

5. The single crystal growth furnace according to claim 1, characterized in that: The extension column (10) drives the upper cover (11) to be arranged at the upper end of the outer shell (1), and the upper cover (11) is sleeved on the outside of the upper end of the outer shell (1).

6. A single crystal growth furnace according to claim 1, characterized in that: The crystallization rod (14) is installed horizontally and vertically inside the second installation frame (9), a single crystal (15) is installed at the bottom of the crystallization rod (14), and the single crystal (15) is arranged inside the crystallization furnace (22).

7. The single crystal growth furnace according to claim 1, characterized in that: A first motor (16) is installed on the side of the first gear (12), and the first motor (16) is arranged on the side of the extension column (10).

8. The single crystal growth furnace according to claim 1, characterized in that: The upper end of the temperature conduction tube (18) is provided with an arc-shaped opening, and the lower end of the temperature conduction tube (18) is provided with a conical air outlet, and the air outlet is arranged at the lower end of the crystallization furnace (22).

9. The single crystal growth furnace according to claim 1, characterized in that: The connecting column (20) is sleeved and installed inside the movable sleeve (19); a second gear (23) is fixedly connected to the lower part of the connecting column (20); a gear column (24) is installed on one side of the lower part of the housing (1); the second gear (23) and the gear column (24) are meshed and connected with each other; and a motor is installed at one end of the gear column (24).

Images