Component content measuring method and device

Abstract

The invention provides a component content measurement method and device. The method comprises the following steps: obtaining Ge content P2 from an X-ray photoelectron spectroscopy of a SiGeB epitaxial layer; calculating the lattice constant a0 of the SiGeB epitaxial layer from the X-ray diffraction spectrogram of the sample to be measured; and solving to obtain the B content in the SiGeB epitaxial layer. According to the method, the Ge content obtained through X-ray photoelectron spectroscopy and the diffraction peak distance between the SiGeB epitaxial layer and the reference silicon substrate obtained through the X-ray diffraction spectrogram are combined, the component content of the B element is calculated, nondestructive testing is conducted on the B element in the SiGeB epitaxial layer, cost is low, consumed time is long, and the application range is wide; meanwhile, the measurement precision of the B element component content is improved by adopting a second preset constant correction formula; in addition, the concentration of the Ge element is measured by using a photo-electron beam signal peak of a 3d track of the Ge element, so that the accuracy of measuring the concentration of the Ge element and the precision of the obtained concentration of the B element are improved; and finally, an X-ray diffraction spectrogram is obtained by adopting a high-resolution X-ray diffractometer, so that the measurement precision of the B element concentration is further improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a component content measurement method and device. Background Art

[0002] In the semiconductor manufacturing process, finely controlling the concentration of B element in the SiGeB epitaxial layer (EPI Layer) is of great significance for improving the electrical performance of the silicon channel. However, the existing technology cannot achieve non-destructive detection of the B concentration in the epitaxial layer.

[0003] In the prior art, there are two main methods for measuring the concentration of B element in the epitaxial layer: SIMS (Secondary Ion Mass Spectroscopy) measurement and optical measurement. Among them, SIMS measurement is destructive and cannot achieve non-destructive testing of the epitaxial layer. It is also costly and time-consuming. Optical measurement requires the use of a reference structure for modeling in advance, and the measurement range can only cover the reference range of the reference structure used in modeling. The accuracy of the measurement cannot be guaranteed for the part beyond the reference range.

[0004] Therefore, there is an urgent need for a nondestructive testing method or device that can achieve high accuracy, wide application range, and high measurement efficiency in measuring the B concentration in the SiGeB epitaxial layer.

[0005] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because these solutions are described in the background technology part of the present application. Summary of the invention

[0006] In view of the above shortcomings of the prior art, the purpose of the present invention is to provide a component content measurement method and device to solve the problems of poor accuracy and low measurement efficiency of non-destructive measurement of B concentration in SiGeB epitaxial layer in the prior art.

[0007] To achieve the above object, the present invention provides a component content measurement method, the measurement method comprising:

[0008] Providing a sample to be measured, wherein the sample to be measured includes a reference silicon substrate and a SiGeB epitaxial layer on the reference silicon substrate;

[0009] Measure and obtain the content P2 of the Ge element in the SiGeB epitaxial layer in the sample to be measured;

[0010] Calculate the lattice constant a0 of the SiGeB epitaxial layer through the X-ray diffraction spectrum of the sample to be measured;

[0011] The value of the component content P3 of the B element in the SiGeB epitaxial layer is obtained by solving the obtained values ​​of P2 and a0.

[0012] Optionally, the method for measuring the content P2 of the Ge element in the SiGeB epitaxial layer in the sample to be measured includes: measuring the X-ray photoelectron spectrum of the SiGeB epitaxial layer in the sample to be measured and the reference silicon substrate, and obtaining the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured through the X-ray photoelectron spectrum.

[0013] Optionally, the method for obtaining the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured through the X-ray photoelectron spectroscopy includes: measuring in the X-ray photoelectron spectroscopy that the photoelectron beam signal intensity of the Ge element in the SiGeB epitaxial layer is b1, the photoelectron beam signal intensity of the Si element is b2, the atomic sensitivity factor of the Ge element is ASF1, and the atomic sensitivity factor of the Si element is ASF2; and calculating that the value of the content P2 of the Ge element in the SiGeB epitaxial layer is (b1 / ASF1) / (b1 / ASF1+b2 / ASF2).

[0014] Optionally, the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer measured by the X-ray photoelectron spectroscopy is the photoelectron beam signal peak of the 3d orbit of the Ge element; or the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer measured by the X-ray photoelectron spectroscopy is the photoelectron beam signal peak of the 2p orbit of the Ge element.

[0015] Optionally, the method for calculating the lattice constant a0 of the SiGeB epitaxial layer through the X-ray diffraction spectrum of the sample to be measured includes: obtaining the position spacing Δθ between the diffraction peak θ1 of the SiGeB epitaxial layer in the sample to be measured and the diffraction peak θ2 of the reference silicon substrate through the X-ray diffraction spectrum of the sample to be measured; and calculating the lattice constant a0 of the SiGeB epitaxial layer through the position spacing Δθ.

[0016] Optionally, the method for calculating the lattice constant a0 of the SiGeB epitaxial layer through the position spacing Δθ includes: calculating the crystal plane spacing difference Δd between the SiGeB epitaxial layer and the reference silicon substrate through the position spacing Δθ and Bragg's law; Δd=d1-d2, wherein d1 is the crystal plane spacing of the SiGeB epitaxial layer, d2 is the crystal plane spacing of the reference silicon substrate, and calculating the value of the crystal plane spacing d1 of the SiGeB epitaxial layer; calculating the lattice constant a0 of the SiGeB epitaxial layer through the crystal plane spacing d1 of the SiGeB epitaxial layer.

[0017] Optionally, the method of calculating the lattice constant a0 of the SiGeB epitaxial layer by using the interplanar spacing d1 of the SiGeB epitaxial layer includes: d1=a0 / √(h 2 +k 2 +l 2 ), where h, k, and l are the crystal plane indices of the SiGeB epitaxial layer, and the lattice constant of the SiGeB epitaxial layer is calculated by substituting a0=d1√(h 2 +k 2 +l 2 ).

[0018] Optionally, a high-resolution X-ray diffractometer is used to measure and obtain the X-ray diffraction spectra of the SiGeB epitaxial layer in the sample to be measured and the reference silicon substrate.

[0019] Optionally, the method of solving the value of the component content P3 of the B element in the SiGeB epitaxial layer according to the obtained values ​​of P2 and a0 includes:

[0020] The lattice constant of Si is a1, the lattice constant of Ge is a2, the content of Si element in the SiGeB epitaxial layer is P1, the content of B element in the SiGeB epitaxial layer is P3, and P1+P2+P3=1;

[0021] Substitute the obtained values ​​of P2, a0, a1, and a2 into the first formula a0=c1×P3+a2×P2+P1×a1, where c1 is a first preset constant, and the value of P3 obtained by solving is the component content of the B element in the SiGeB epitaxial layer;

[0022] Or substitute the obtained values ​​of P2, a0, a1, and a2 into the second formula a0=c1×P3+a2×P2+P1×a1-c2×P2×(1-P2), where c2 is the second preset constant, and the value of P3 obtained by solving is the precise value of the component content of the B element in the SiGeB epitaxial layer.

[0023] The present invention also provides a component content measuring device, which uses any one of the component content measuring methods described above to measure the component content, and the measuring device includes: an X-ray photoelectron spectrometer, a high-resolution X-ray diffractometer and a calculation unit;

[0024] The calculation unit is electrically connected to the X-ray photoelectron spectrometer and the high-resolution X-ray diffractometer, respectively. The calculation unit is used to receive data measurement of the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured obtained by the X-ray photoelectron spectrometer and the X-ray diffraction spectrum obtained by the high-resolution X-ray diffractometer. The calculation unit calculates and solves the value of the content P3 of the B element in the SiGeB epitaxial layer through the obtained data of P2 and the X-ray diffraction spectrum and outputs it.

[0025] As described above, the component content measurement method and device of the present invention have the following beneficial effects:

[0026] The present invention calculates the component content of the B element by combining the Ge element content obtained from the X-ray photoelectron spectrum and the diffraction peak spacing between the SiGeB epitaxial layer and the reference silicon substrate obtained from the X-ray diffraction spectrum, and can perform non-destructive detection of the B element in the SiGeB epitaxial layer, while having low cost, long time consumption and wide application range;

[0027] The present invention improves the measurement accuracy of the B element component content in the obtained SiGeB epitaxial layer by adopting the second preset constant correction formula;

[0028] The present invention measures the Ge element photoelectron beam signal in the SiGeB epitaxial layer by using the photoelectron beam signal peak of the 3d orbit of the Ge element. The photoelectron beam kinetic energy generated by the 3d orbit of the Ge element is higher, thereby further improving the accuracy of measuring the Ge element concentration in the SiGeB epitaxial layer, so as to improve the measurement accuracy of the B element concentration in the SiGeB epitaxial layer.

[0029] The present invention adopts a high-resolution X-ray diffractometer to obtain the X-ray diffraction spectra of the SiGeB epitaxial layer and the reference silicon substrate, thereby improving the accuracy of the lattice constant of the obtained SiGeB epitaxial layer and further improving the measurement accuracy of the B element concentration in the SiGeB epitaxial layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a diagram showing the steps of the component content measurement method in the present invention.

[0031] Figure 2 Shown is a schematic diagram of the atomic structure of a sample to be measured by the component content measurement method of the present invention.

[0032] Figure 3 Shown is the X-ray diffraction spectrum obtained in an example of step 3 of the component content measurement method of the present invention.

[0033] Figure 4 It shows a fitting curve diagram between the B component content obtained in step 4 of the component content measurement method of the present invention and the B component content obtained by SIMS.

[0034] Component number description

[0035] 10. Sample to be measured; 11. Reference silicon substrate; 12. SiGeB epitaxial layer. DETAILED DESCRIPTION

[0036] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0037] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the schematic diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0038] For convenience of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings.

[0039] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0040] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0041] In the semiconductor manufacturing process, fine control of the concentration of B element in the SiGeB epitaxial layer (EPI Layer) is of great significance for improving the electrical properties of the silicon channel. However, in the prior art, there are two main methods for measuring the concentration of B element in the epitaxial layer: SIMS (Secondary Ion Mass Spectroscopy) measurement and optical measurement. Among them, SIMS measurement is destructive and cannot achieve non-destructive testing of the epitaxial layer. It is also costly and time-consuming. Optical measurement requires the use of a reference structure for modeling in advance, and the measurement range can only cover the reference range of the reference structure used for modeling. The accuracy of the measurement cannot be guaranteed for the part beyond the reference range.

[0042] Other methods that can measure component concentrations with high accuracy include:

[0043] 1) When using HRXRD (High-Resolution X-Ray Diffraction), the crystal structure information is obtained by analyzing the diffraction pattern of the sample to be measured; this method is sensitive to both Ge and B elements, resulting in the diffraction peaks corresponding to Ge and B being close. Therefore, the HRXRD method is difficult to independently calculate the component content of Ge or B. The estimated content of Ge can only be obtained by calculating the influence of the X-ray diffraction peaks caused by the influence of Ge and B on the lattice according to Ge;

[0044] 2) When using the XPS (X-ray Photoelectron Spectroscopy) method, the chemical and physical information of the surface of the sample to be measured is obtained by measuring the number of photoelectrons excited when X-ray photons are irradiated to the surface of the sample to be measured and the energy distribution of Auger electrons; since the 1s orbital ionization cross section of B is small, the sensitivity of the photoelectron beam spectrum peak signal is relatively low, and the 2s orbital signal of Si will overlap with the 1s orbital signal of B, it is difficult to accurately distinguish the composition ratio between the B element and other elements in SiGeB using the XPS method.

[0045] Therefore, there is no method currently available that can accurately measure the concentration of the B element in SiGeB.

[0046] like Figure 1 As shown, the present invention provides a component content measurement method, the measurement method comprising:

[0047] Step 1: providing a sample to be measured, wherein the sample to be measured includes a reference silicon substrate and a SiGeB epitaxial layer on the reference silicon substrate;

[0048] Step 2: measuring and obtaining the content P2 of the Ge element in the SiGeB epitaxial layer in the sample to be measured;

[0049] Step 3: Calculate the lattice constant a0 of the SiGeB epitaxial layer through the X-ray diffraction spectrum of the sample to be measured;

[0050] Step 4: The value of the component content P3 of the B element in the SiGeB epitaxial layer is obtained according to the obtained values ​​of P2 and a0.

[0051] The component content measurement method of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the above sequence does not strictly represent the sequence of the component content measurement method protected by the present invention, and those skilled in the art may change it according to the actual steps.

[0052] First, step 1 is performed to provide a sample 10 to be measured. The sample 10 to be measured includes a reference silicon substrate 11 and a SiGeB epitaxial layer 12 on the reference silicon substrate 11 .

[0053] Specifically, since the component content of the B element in SiGeB needs to be measured in actual production applications often under the condition of using a silicon substrate, a sample 10 to be measured comprising a reference silicon substrate 11 and a SiGeB epitaxial layer 12 is used to adapt to the most extensive sample state in actual applications.

[0054] Then, step 2 is performed to measure and obtain the content P2 of the Ge element in the SiGeB epitaxial layer 12 in the sample 10 to be measured.

[0055] In one embodiment, a method for measuring the content P2 of the Ge element in the SiGeB epitaxial layer 12 in the sample to be measured 10 includes: measuring the X-ray photoelectron spectrum of the SiGeB epitaxial layer 12 in the sample to be measured 10 and the reference silicon substrate 11, and obtaining the content P2 of the Ge element in the SiGeB epitaxial layer 12 of the sample to be measured 10 through the X-ray photoelectron spectrum.

[0056] In one embodiment, the method for obtaining the content P2 of the Ge element in the SiGeB epitaxial layer 12 of the sample 10 to be measured by the X-ray photoelectron spectroscopy includes: measuring in the X-ray photoelectron spectroscopy that the photoelectron beam signal intensity of the Ge element in the SiGeB epitaxial layer 12 is b1, the photoelectron beam signal intensity of the Si element is b2, the atomic sensitivity factor of the Ge element is ASF1, and the atomic sensitivity factor of the Si element is ASF2, and calculating that the value of the content P2 of the Ge element in the SiGeB epitaxial layer 12 is (b1 / ASF1) / (b1 / ASF1+b2 / ASF2).

[0057] Specifically, Figure 2 The atomic structure diagram of the sample 10 to be measured is shown. It can be seen that the content of B atoms is the least, which is actually about 0.3%-0.5%. Therefore, when calculating the content of Ge element in the SiGeB epitaxial layer by X-ray photoelectron spectroscopy, the content of B element can be temporarily ignored. The value of the content P2 of Ge element in the SiGeB epitaxial layer 12 is calculated using the photoelectron beam signal intensity and atomic sensitivity factor of Ge and Si.

[0058] In one embodiment, the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer 12 measured by the X-ray photoelectron spectroscopy is a photoelectron beam signal peak of the 2p orbit of the Ge element.

[0059] Preferably, the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer 12 measured by the X-ray photoelectron spectroscopy is a photoelectron beam signal peak of the 3d orbit of the Ge element.

[0060] The present invention measures the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer 12 by using the photoelectron beam signal peak of the 3d orbit of the Ge element. The photoelectron beam kinetic energy generated by the 3d orbit of the Ge element is higher, thereby further improving the accuracy of measuring the Ge element concentration in the SiGeB epitaxial layer 12, thereby improving the measurement accuracy of the B element concentration in the SiGeB epitaxial layer 12 obtained in the end.

[0061] Next, step 3 is performed to calculate the lattice constant a0 of the SiGeB epitaxial layer 12 through the X-ray diffraction spectrum of the sample 10 to be measured.

[0062] In one embodiment, a method for calculating the lattice constant a0 of the SiGeB epitaxial layer 12 by using the X-ray diffraction spectrum of the sample 10 to be measured includes: Figure 3 Shown is an X-ray diffraction spectrum of the sample 10 to be measured, wherein the horizontal axis is the diffraction angle and the vertical axis is the diffraction intensity. The position spacing Δθ between the diffraction peak θ1 of the SiGeB epitaxial layer 12 in the sample 10 to be measured and the diffraction peak θ2 of the reference silicon substrate 11 is obtained through the X-ray diffraction spectrum of the sample 10 to be measured; the lattice constant a0 of the SiGeB epitaxial layer 12 is calculated through the position spacing Δθ.

[0063] In one embodiment, a method for calculating the lattice constant a0 of the SiGeB epitaxial layer 12 through the position spacing Δθ includes: calculating the crystal plane spacing difference Δd between the SiGeB epitaxial layer 12 and the reference silicon substrate 11 through the position spacing Δθ and Bragg's law; Δd=d1-d2, wherein d1 is the crystal plane spacing of the SiGeB epitaxial layer 12, d2 is the crystal plane spacing of the reference silicon substrate 11, and calculating the value of the crystal plane spacing d1 of the SiGeB epitaxial layer 12; calculating the lattice constant a0 of the SiGeB epitaxial layer 12 through the crystal plane spacing d1 of the SiGeB epitaxial layer 12.

[0064] Specifically, when the crystal plane spacing difference Δd between the SiGeB epitaxial layer 12 and the reference silicon substrate 11 is calculated by the position spacing Δθ and Bragg's law, the Bragg's law used is 2dsinθ=nλ, wherein θ is the angle between the incident X-ray and the crystal atomic plane (i.e., the position of the corresponding diffraction peak in the X-ray diffraction spectrum), n is an integer representing the interference order, and λ is the wavelength of the incident X-ray; substituting the diffraction peak θ1 of the SiGeB epitaxial layer 12 and the diffraction peak θ2 of the reference silicon substrate 11, it can be obtained that: 2d1sinθ1=nλ, 2d2sinθ2=nλ, and the relationship between Δd(d1-d2) and Δθ(θ1-θ2) can be calculated using the condition that nλ is equal, so that the value of d1 can be obtained under the condition that Δθ and d2 are known.

[0065] In one embodiment, the method for calculating the lattice constant a0 of the SiGeB epitaxial layer 12 by the interplanar spacing d1 of the SiGeB epitaxial layer 12 includes: d1 = a0 / √(h 2 +k 2 +l 2 ), where h, k, and l are the crystal plane indices of the SiGeB epitaxial layer 12, and the lattice constant a0 of the SiGeB epitaxial layer 12 is calculated as follows: a0=d1√(h 2 +k 2 +l 2 ).

[0066] In one embodiment, d1 is the interplanar spacing of the (004) crystal plane of the SiGeB epitaxial layer 12, and d2 is the interplanar spacing of the (004) crystal plane of the reference silicon substrate 11. In this case, h=0, k=0, and l=4.

[0067] In one embodiment, a high-resolution X-ray diffractometer is used to measure and obtain the X-ray diffraction spectra of the SiGeB epitaxial layer 12 and the reference silicon substrate 11 in the sample 10 to be measured.

[0068] The present invention uses a high-resolution X-ray diffractometer to obtain X-ray diffraction spectra of the SiGeB epitaxial layer 12 and the reference silicon substrate 11, thereby improving the accuracy of the lattice constant of the obtained SiGeB epitaxial layer 12 and further improving the measurement accuracy of the B element concentration in the SiGeB epitaxial layer 12.

[0069] Finally, step 4 is performed to obtain the value of the component content P3 of the B element in the SiGeB epitaxial layer 12 based on the obtained values ​​of P2 and a0.

[0070] The present invention calculates the component content of the B element by combining the Ge element content obtained from the X-ray photoelectron spectrum and the diffraction peak spacing between the SiGeB epitaxial layer 12 and the reference silicon substrate 11 obtained from the X-ray diffraction spectrum. Figure 4 The figure shows a fitting curve diagram between the B component content calculated by the present invention and the B component content obtained by SIMS (Secondary Ion Mass Spectroscopy), wherein the coordinate of the horizontal axis is the B component content obtained by the method of the present invention, and the vertical axis is the B component content obtained by SIMS. The discrete points in the figure are actual data points, and the dotted line is a straight line obtained by linear fitting of the data points. It can be seen that the B component contents obtained by the two methods are basically linearly correlated, and the obtained linear fitting formula is y=1.0182x-3×10 19 , and the coefficient of determination R 2 =0.9665, which is very close to 1, which proves that the B component contents obtained by the two methods have a high degree of fit, and proves that the measurement error of the method of the present invention is smaller than that of SIMS. Compared with SIMS, the present invention can perform non-destructive detection of the B element in the SiGeB epitaxial layer 12, and at the same time, it has low cost, long time consumption, and a wide range of applications.

[0071] In one embodiment, a method for solving the value of the component content P3 of the B element in the SiGeB epitaxial layer 12 according to the obtained values ​​of P2 and a0 includes:

[0072] The lattice constant of Si is a1, the lattice constant of Ge is a2, the content of Si element in the SiGeB epitaxial layer 12 is P1, the content of B element in the SiGeB epitaxial layer 12 is P3, and P1+P2+P3=1;

[0073] Substitute the obtained values ​​of P2, a0, a1, and a2 into the first formula a0=c1×P3+a2×P2+P1×a1, where c1 is a first preset constant, and the value of P3 obtained by solving is the component content of the B element in the SiGeB epitaxial layer 12.

[0074] Specifically, the first formula substituted into the formula is Vegard's law, in which the first preset constant c1 is a coefficient calculated in Vegard's law, and the coefficient can be 3.78, or other appropriate specific values ​​according to the accuracy requirements.

[0075] In one embodiment, the obtained values ​​of P2, a0, a1, and a2 are substituted into the second formula a0=c1×P3+a2×P2+P1×a1-c2×P2×(1-P2), where c2 is a second preset constant, and the value of P3 obtained by solving is the precise value of the component content of the B element in the SiGeB epitaxial layer 12.

[0076] Specifically, the second formula substituted is a modified formula of Vegard's law, which is obtained through actual experimental measurements, wherein the second preset constant c2 is a coefficient calculated in Vegard's modified formula, which can be 0.0272, or other appropriate specific values ​​according to accuracy requirements.

[0077] The present invention improves the measurement accuracy of the B element component content in the SiGeB epitaxial layer 12 by adopting the second preset constant correction formula.

[0078] The present invention also provides a component content measuring device, which uses any one of the component content measuring methods described above to measure the component content, and the measuring device includes: an X-ray photoelectron spectrometer, a high-resolution X-ray diffractometer and a calculation unit;

[0079] The calculation unit is electrically connected to the X-ray photoelectron spectrometer and the high-resolution X-ray diffractometer, respectively. The calculation unit is used to receive data measurement of the content P2 of the Ge element in the SiGeB epitaxial layer 12 of the sample 10 to be measured obtained by the X-ray photoelectron spectrometer and the X-ray diffraction spectrum obtained by the high-resolution X-ray diffractometer. The calculation unit calculates and solves the value of the content P3 of the B element in the SiGeB epitaxial layer 12 through the obtained data of P2 and the X-ray diffraction spectrum and outputs it.

[0080] In summary, the component content measurement method and device of the present invention can calculate the component content of the B element by combining the Ge element content obtained in the X-ray photoelectron energy spectrum and the diffraction peak spacing between the SiGeB epitaxial layer and the reference silicon substrate obtained in the X-ray diffraction spectrum, and can perform non-destructive detection of the B element in the SiGeB epitaxial layer, while having low cost, long time consumption, and wide application range; at the same time, by adopting the second preset constant correction formula, the measurement accuracy of the B element component content in the obtained SiGeB epitaxial layer is improved; in addition, by using the photoelectric correction formula of the 3d orbit of the Ge element The sub-beam signal peak measures the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer. The photoelectron beam kinetic energy generated by the 3d orbit of the Ge element is higher, which can further improve the accuracy of measuring the Ge element concentration in the SiGeB epitaxial layer, so as to improve the measurement accuracy of the B element concentration in the SiGeB epitaxial layer; finally, a high-resolution X-ray diffractometer is used to obtain the X-ray diffraction spectrum of the SiGeB epitaxial layer and the reference silicon substrate, which improves the accuracy of the lattice constant of the obtained SiGeB epitaxial layer, so as to further improve the measurement accuracy of the B element concentration in the SiGeB epitaxial layer.

[0081] Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0082] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A component content measurement method, characterized in that: The measuring method comprises: Providing a sample to be measured, wherein the sample to be measured includes a reference silicon substrate and a SiGeB epitaxial layer on the reference silicon substrate; Measure and obtain the content P2 of the Ge element in the SiGeB epitaxial layer in the sample to be measured; The lattice constant a0 of the SiGeB epitaxial layer is calculated by the X-ray diffraction spectrum of the sample to be measured; and the value of the component content P3 of the B element in the SiGeB epitaxial layer is solved according to the obtained values ​​of P2 and a0.

2. The component content measurement method according to claim 1, characterized in that: The method for measuring the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured includes: measuring the X-ray photoelectron spectra of the SiGeB epitaxial layer in the sample to be measured and the reference silicon substrate, and obtaining the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured through the X-ray photoelectron spectra.

3. The component content measuring method according to claim 2, characterized in that: The method for obtaining the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured by the X-ray photoelectron spectroscopy includes: measuring in the X-ray photoelectron spectroscopy that the photoelectron beam signal intensity of the Ge element in the SiGeB epitaxial layer is b1, the photoelectron beam signal intensity of the Si element is b2, the atomic sensitivity factor of the Ge element is ASF1, and the atomic sensitivity factor of the Si element is ASF2, and calculating the value of the content P2 of the Ge element in the SiGeB epitaxial layer to be (b1 / ASF1) / (b1 / ASF1+b2 / ASF2).

4. The component content measuring method according to claim 2, characterized in that: The photoelectron beam signal of the Ge element in the SiGeB epitaxial layer measured by the X-ray photoelectron spectroscopy is the photoelectron beam signal peak of the 3d orbit of the Ge element; or the photoelectron beam signal of the Ge element in the SiGeB epitaxial layer measured by the X-ray photoelectron spectroscopy is the photoelectron beam signal peak of the 2p orbit of the Ge element.

5. The component content measuring method according to claim 1, characterized in that: The method for calculating the lattice constant a0 of the SiGeB epitaxial layer through the X-ray diffraction spectrum of the sample to be measured includes: obtaining the position spacing Δθ between the diffraction peak θ1 of the SiGeB epitaxial layer in the sample to be measured and the diffraction peak θ2 of the reference silicon substrate through the X-ray diffraction spectrum of the sample to be measured; and calculating the lattice constant a0 of the SiGeB epitaxial layer through the position spacing Δθ.

6. The component content measuring method according to claim 5, characterized in that: The method for calculating the lattice constant a0 of the SiGeB epitaxial layer through the position spacing Δθ includes: calculating the crystal plane spacing difference Δd between the SiGeB epitaxial layer and the reference silicon substrate through the position spacing Δθ and Bragg's law; Δd=d1-d2, wherein d1 is the crystal plane spacing of the SiGeB epitaxial layer, d2 is the crystal plane spacing of the reference silicon substrate, and calculating the value of the crystal plane spacing d1 of the SiGeB epitaxial layer; and calculating the lattice constant a0 of the SiGeB epitaxial layer through the crystal plane spacing d1 of the SiGeB epitaxial layer.

7. The component content measurement method according to claim 6, characterized in that: The method for calculating the lattice constant a0 of the SiGeB epitaxial layer through the crystal plane spacing d1 of the SiGeB epitaxial layer includes: d1=a0 / √(h2+k2+l2), wherein h, k, and l are the crystal plane indices of the SiGeB epitaxial layer, and the lattice constant a0 of the SiGeB epitaxial layer is obtained by substituting them into the calculation.

8. The component content measurement method according to claim 1, characterized in that: The X-ray diffraction spectra of the SiGeB epitaxial layer and the reference silicon substrate in the sample to be measured are obtained by measuring with a high-resolution X-ray diffractometer.

9. The component content measurement method according to claim 1, characterized in that: The method for solving the value of the component content P3 of the B element in the SiGeB epitaxial layer according to the obtained values ​​of P2 and a0 includes: The lattice constant of Si is a1, the lattice constant of Ge is a2, the content of Si element in the SiGeB epitaxial layer is P1, the content of B element in the SiGeB epitaxial layer is P3, and P1+P2+P3=1; Substitute the obtained values ​​of P2, a0, a1, and a2 into the first formula a0=c1×P3+a2×P2+P1×a1, where c1 is a first preset constant, and the value of P3 obtained by solving is the component content of the B element in the SiGeB epitaxial layer; Or substitute the obtained values ​​of P2, a0, a1, and a2 into the second formula a0=c1×P3+a2×P2+P1×a1-c2×P2×(1-P2), where c2 is the second preset constant, and the value of P3 obtained by solving is the precise value of the component content of the B element in the SiGeB epitaxial layer.

10. A component content measuring device, characterized in that: The measuring device adopts the component content measuring method according to any one of claims 1 to 9 to measure the component content, and the measuring device comprises: an X-ray photoelectron spectrometer, a high-resolution X-ray diffractometer and a calculation unit; The calculation unit is electrically connected to the X-ray photoelectron spectrometer and the high-resolution X-ray diffractometer, respectively. The calculation unit is used to receive data measurement of the content P2 of the Ge element in the SiGeB epitaxial layer of the sample to be measured obtained by the X-ray photoelectron spectrometer and the X-ray diffraction spectrum obtained by the high-resolution X-ray diffractometer. The calculation unit calculates and solves the value of the content P3 of the B element in the SiGeB epitaxial layer through the obtained data of P2 and the X-ray diffraction spectrum and outputs it.

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