Performance simulation processing method and system applied to IGBT structure test

Abstract

The invention discloses a performance simulation processing method and system applied to an IGBT structure test, and belongs to the technical field of IGBT structure test simulation, and the method comprises the steps: respectively forming a test database and a verification database based on the performance test parameters and operation characteristics of an IGBT structure; different performance test parameters are selected from the test database to be combined to serve as a simulated IGBT structure model, and the simulated operation effect is recorded in the verification database; calling the operation effect value output by each test task, verifying the performance difference of the IGBT structures, and selecting the IGBT structures with similar performance; and in different IGBT structures with similar performances, verifying the error weight of the performance test parameters between the IGBT structures, and analyzing the correlation between the IGBT structures. According to the method, related structure models can be quickly calibrated in a large number of simulation results, manual and subjective model observation is avoided, and the simulation efficiency and precision are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of IGBT structure test simulation, and in particular to a performance simulation processing method and system applied to IGBT structure test. Background Art

[0002] IGBT is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It combines the advantages of MOSFET's high input impedance and GTR's low on-state voltage drop. It has the characteristics of high input impedance, low on-state voltage drop, high-speed switching characteristics and low on-state loss.

[0003] With the continuous advancement of semiconductor technology and the continuous expansion of IGBT application fields, IGBT structure testing technology is also constantly developing. In the existing technology, a multimeter is generally used to detect parameters such as the resistance between each pin or terminal of the IGBT structure to verify the performance of the IGBT structure. This process is limited to a single test task, that is, a single IGBT structure model. When the test tasks are diverse, subjective model observation is often performed through a single test task, which makes it difficult to quickly calibrate performance-related structural models from a large number of simulation results, affecting simulation efficiency and accuracy. Summary of the invention

[0004] In view of the shortcomings of the existing methods, the present invention provides a performance simulation processing system and method for IGBT structure testing to solve the problems raised in the above background technology.

[0005] The technical solution adopted by the present invention is: a performance simulation processing system applied to IGBT structure testing, the system comprises: a data storage module, a simulation module, a performance analysis module and a structure calibration module;

[0006] The data storage module is used to divide the test database and the verification database in the storage space, and the test database is formed based on the performance test parameters of the IGBT structure, and the verification database is formed based on the operating characteristics of the IGBT structure;

[0007] The simulation module is used to select different performance test parameters in the test database and combine them to form a test task as a simulated IGBT structure model, and record the simulation operation effect in the verification database;

[0008] The performance analysis module is used to retrieve the operating effect value output by each test task, form a simulation iteration result set, verify the performance difference of the IGBT structure, and select IGBT structures with similar performance;

[0009] The structure calibration module is used to verify the error weights of performance test parameters between IGBT structures with similar performance, and analyze the correlation between IGBT structures.

[0010] Further, the data storage module includes a test database unit and a verification database unit;

[0011] The test database unit is used to form a test database, wherein the test database includes a plurality of test sample clusters, wherein the test sample clusters are configured based on the IGBT structure, and one test sample cluster is configured correspondingly to one structural component, wherein the test data refers to performance test parameters compiled based on the structural component, and one performance test parameter category is compiled correspondingly to one structural component;

[0012] The verification database unit is used to constitute a verification database, which includes a plurality of verification sample clusters. The verification sample clusters are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured corresponding to one operating characteristic; the verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and different test methods are used based on different operating characteristics to obtain the operating effect value, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

[0013] Furthermore, the simulation module includes constructing an iterative test data processing model, taking a test sample cluster as input, taking a verification sample cluster as output, taking one iterative test as one test task, and recording the operating effect value output during performance simulation in the verification sample cluster.

[0014] Furthermore, the performance analysis module includes taking the test task as the guide for verifying the effect, verifying the performance difference of the IGBT structure based on the operation effect value, and forming a related structure set.

[0015] Furthermore, the structure calibration module includes, based on the relevant structure set, verifying the error weights of the performance test parameters between the test tasks, analyzing the correlation between the IGBT structures, and selecting and outputting the test task with the greatest correlation.

[0016] A performance simulation processing method for IGBT structure testing includes the following steps:

[0017] Step S100: Divide the storage space into a test database and a verification database, construct the test database based on the performance test parameters of the IGBT structure, and construct the verification database based on the operating characteristics of the IGBT structure;

[0018] Step S200: Select different performance test parameters in the test database and combine them to form a test task as a simulated IGBT structure model, and record the simulation operation effect in the verification database;

[0019] Step S300: Retrieve the operation effect value output by each test task to form a simulation iteration result set, verify the performance difference of the IGBT structure, and select IGBT structures with similar performance;

[0020] Step S400: for IGBT structures with similar performance, verify the error weights of performance test parameters between the IGBT structures and analyze the correlation between the IGBT structures.

[0021] Furthermore, the test database and the verification database are constructed as follows:

[0022] The test database includes several test sample clusters, which are configured based on the IGBT structure, and one test sample cluster is configured for each structural component. The test data refers to performance test parameters compiled based on the structural component, and one performance test parameter category is compiled for each structural component. The test sample cluster corresponding to the i-th performance test parameter category is recorded as TS i ;

[0023] The verification database includes several verification sample clusters, which are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured corresponding to one operating characteristic. The verification sample cluster corresponding to the jth operating characteristic is recorded as VS j ; The verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and the operating effect value is obtained by using different test methods based on different operating characteristics, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

[0024] Furthermore, the simulation includes:

[0025] Construct an iterative test data processing model, take the test sample cluster as input, and take the verification sample cluster as output; record the input data cluster of the Lth iterative test as IN L ={X i |TS i , i∈[1,I]}, where I represents the total number of structural parts, X i Indicates performance test parameters, X i |TS i Indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i =Xi , the input data cluster of the L+1th iteration test is recorded as IN L+1 , and IN L+1 ≠IN L ;

[0026] Take one iteration test as one test task, and record the running effect value output during performance simulation in the verification sample cluster, and record the verification sample cluster VS corresponding to the Lth test task. j The running effect value in is recorded as Y L |VS j , where Y L Indicates the running effect value, and Y L =Y L |VS j , Y L |VS j ∈VS j ;

[0027] when When the iteration test stops, NUM(TS i ) represents the test sample cluster TS i The number of performance test parameters included in ;

[0028] According to the above method, in each iteration, only one performance test parameter is selected in a test sample cluster, thus forming an IGBT structure model.

[0029] Furthermore, the analysis method of the performance difference includes:

[0030] Taking the test task as the guide for verifying the effect, the running effect value output by the Lth test task is retrieved to form a simulation iteration result set, which is recorded as RS L = {Y L |VS j , j∈[1,J]}, where J represents the total number of running characteristics;

[0031] Based on the simulation iteration result set, the performance differences of the IGBT structure are verified:

[0032] Verification formula: In the formula, K represents the adjustment coefficient, and K is an integer. Y L+k |VS j Represents the verification sample cluster VS corresponding to the L+Kth test task j The running effect value in , and Y L+k |VS j ∈RS L+K , R.S. L+Krepresents a simulation iteration result set consisting of the operation effect values ​​output by the L+Kth test task, and U(L→L+K) represents the degree of performance difference between the IGBT structure running the Lth test task and the IGBT structure running the L+Kth test task;

[0033] Change the value of K, perform pairwise verification between the simulation iteration result sets, preset the performance difference degree threshold, and if the performance difference degree is less than or equal to the performance difference degree threshold, it is determined that there is performance similarity between the IGBT structure running the L+Kth test task and the IGBT structure running the Lth test task, and the IGBT structure running the L+Kth test task is used as the related structure of the IGBT structure running the Lth test task to form a related structure set, which is recorded as

[0034] Furthermore, the analysis of the correlation between IGBT structures includes:

[0035] In the relevant structure set DS L In the Lth test task, the input data cluster IN is retrieved respectively. L , as the IGBT structure running the Lth test task, call the input data cluster IN of the L+Kth test task L+K , IGBT structure running as the L+Kth test task;

[0036] Verify the error weights of the performance test parameters between the IGBT structures running the Lth test task and the L+Kth test task, and analyze the correlation between the IGBT structures:

[0037]

[0038] In the formula, OV(X i |TS i ∈IN L Indicates that under the IGBT structure of the Lth test task, in the test sample cluster TS i Performance test parameters selected in X i |TS i With the related structure set DS L The average error of the performance test parameters under the IGBT structure of each test task, NUM(DS L ) represents the related structure set DS L The number of test tasks included in IN L+K represents the input data cluster of the L+Kth iteration test, [X i |TS i ∈IN L+k ] indicates that in the L+Kth iteration test, in the test sample cluster TS iA performance test parameter selected from i |TS i ∈IN L+K ]=X i |TS i ,[X i |TS i ∈IN L ] indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i ∈IN L ]=X i |TS i , SD(IN L+K ) represents the error standard deviation of the performance test parameters under the IGBT structure running the L+Kth test task, EW(IN L+K ) represents the error weight of the performance test parameters of the IGBT structure running the L+Kth test task, SSV(IN L+K ) represents the correlation of the IGBT structure of the L+Kth test task run.

[0039] Beneficial effects of the present invention:

[0040] 1. Based on the performance test parameters and operating characteristics of the IGBT structure, a test database and a verification database are constructed respectively; different performance test parameters are selected in the test database for combination as the simulated IGBT structure model, and the simulation operation effect is recorded in the verification database; the operation effect value output by each test task is retrieved to verify the performance difference of the IGBT structure, and the IGBT structure with similar performance is selected; for IGBT structures with similar performance, the error weights of the performance test parameters between the IGBT structures are verified, and the correlation between the IGBT structures is analyzed; and then the relevant structural models can be quickly calibrated in a large number of simulation results, avoiding subjective model observation and improving simulation efficiency and accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 The present invention discloses a performance simulation processing method and a system flow chart for IGBT structure testing. DETAILED DESCRIPTION

[0042] The present invention is further described below in conjunction with the accompanying drawings and embodiments. This figure is a simplified schematic diagram, which only illustrates the basic structure of the present invention in a schematic manner, and therefore it only shows the components related to the present invention.

[0043] In the first embodiment: a performance simulation processing system for IGBT structure testing is provided, the system comprising: a data storage module, a simulation module, a performance analysis module and a structure calibration module;

[0044] The data storage module is used to divide the test database and the verification database in the storage space, and the test database is formed based on the performance test parameters of the IGBT structure; the verification database is formed based on the operating characteristics of the IGBT structure;

[0045] Preferably, the data storage module includes a test database unit and a verification database unit;

[0046] A test database unit is used to form a test database, wherein the test database includes a plurality of test sample clusters, the test sample clusters are configured based on the IGBT structure, and one test sample cluster is configured corresponding to one structural component, and the test data refers to performance test parameters compiled based on the structural component, and one performance test parameter category is compiled corresponding to one structural component;

[0047] A verification database unit is used to constitute a verification database, which includes several verification sample clusters. The verification sample clusters are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured for each operating characteristic; the verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and different test methods are used based on different operating characteristics to obtain the operating effect value, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

[0048] The simulation module is used to select different performance test parameters in the test database and combine them to form a test task as the simulated IGBT structure model, and record the simulation operation effect in the verification database;

[0049] Preferably, the simulation module includes constructing an iterative test data processing model, taking a test sample cluster as input, taking a verification sample cluster as output, taking one iterative test as one test task, and recording the operating effect value output during performance simulation in the verification sample cluster.

[0050] The performance analysis module is used to retrieve the operating effect value output by each test task, form a simulation iteration result set, verify the performance differences of the IGBT structure, and select IGBT structures with similar performance;

[0051] Preferably, the performance analysis module includes taking the test task as the guide for verifying the effect, based on the operation effect value, verifying the performance difference of the IGBT structure, and forming a related structure set.

[0052] The structure calibration module is used to verify the error weights of performance test parameters between IGBT structures with similar performance and analyze the correlation between IGBT structures;

[0053] Preferably, the structure calibration module includes, based on a set of related structures, verifying the error weights of performance test parameters between test tasks, analyzing the correlation between IGBT structures, and selecting and outputting the test task with the greatest correlation.

[0054] like Figure 1 As shown, a performance simulation processing method and system for IGBT structure testing includes the following steps:

[0055] Step S100, dividing a test database and a verification database in a storage space, forming a test database based on performance test parameters of the IGBT structure, and forming a verification database based on operating characteristics of the IGBT structure;

[0056] Exemplarily, the test database and the verification database are constructed as follows:

[0057] The test database contains several test sample clusters. The test sample clusters are configured based on the IGBT structure, and one test sample cluster is configured for each structural component. The test data refers to the performance test parameters compiled based on the structural component, and one performance test parameter category is compiled for each structural component. The test sample cluster corresponding to the i-th performance test parameter category is recorded as TS i ;

[0058] The verification database contains several verification sample clusters. The verification sample clusters are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured for each operating characteristic. The verification sample cluster corresponding to the jth operating characteristic is recorded as VS j ; The verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and the operating effect value is obtained by using different test methods based on different operating characteristics, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

[0059] For example, the performance test parameters include source test parameters, drain test parameters, gate test parameters, cell test parameters, N+ emitter region test parameters, P+ contact region test parameters, trench gate oxide layer test parameters, N-type cs layer test parameters, floating p-type region test first parameters, floating p-type region test second parameters, N-drift region test parameters, P collector test parameters, and N buffer region test parameters;

[0060] The source test parameter refers to the ratio of the source length to the source width; the drain test parameter refers to the ratio of the drain length to the drain width; the gate test parameter refers to the ratio of the gate length to the gate width; the cell test parameter refers to the cell width; the N+ emitter region test parameter refers to the N+ emitter region width; the P+ contact region test parameter refers to the P+ contact region width; the trench gate oxide layer test parameter refers to the trench gate oxide layer thickness; the N-type cs layer test parameter refers to the N-type cs layer thickness; the first floating p-type region test parameter refers to the floating p-type region depth; the second floating p-type region test parameter refers to the floating p-type region thickness; the N-drift region test parameter refers to the N-drift region thickness; the P collector test parameter refers to the P collector width; the N buffer region test parameter refers to the N buffer region thickness.

[0061] For example, operating characteristics include forward conduction characteristics, transfer characteristics, turn-off loss characteristics, and breakdown characteristics;

[0062] Test methods such as:

[0063] Transfer characteristics,

[0064] Among them, V TH is the threshold voltage, T is the absolute temperature, q is the charge, k is the Boltzmann constant, N B is the base impurity concentration, C OX is the capacitance in the oxide layer, Q OX is the total charge in the oxide layer, n i is the intrinsic carrier concentration.

[0065] Step S200, selecting different performance test parameters in the test database and combining them to form a test task as a simulated IGBT structure model, and recording the simulation operation effect in the verification database;

[0066] Exemplarily, the simulation includes:

[0067] Construct an iterative test data processing model, take the test sample cluster as input, and take the verification sample cluster as output; record the input data cluster of the Lth iterative test as IN L ={X i |TS i , i∈[1,I]}, where I represents the total number of structural parts, X i Indicates performance test parameters, X i |TS i Indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i =X i , the input data cluster of the L+1th iteration test is recorded as IN L+1 , and INL+1 ≠IN L ;

[0068] Take one iteration test as one test task, and record the running effect value output during performance simulation in the verification sample cluster, and record the verification sample cluster VS corresponding to the Lth test task. j The running effect value in is recorded as Y L |VS j , where Y L Indicates the running effect value, and Y L =Y L |VS j , Y L |VS j ∈VS j ;

[0069] when When , the iteration test stops; where NUM(TS i ) represents the test sample cluster TS i The number of performance test parameters included in ;

[0070] Table 1: Parameters of different structural models

[0071]

[0072] Table 1 shows the performance test parameters of different IGBT model structures.

[0073] Step S300, retrieve the running effect value output by each test task to form a simulation iteration result set, verify the performance difference of the IGBT structure, and select IGBT structures with similar performance;

[0074] Exemplary methods of analyzing performance differences include:

[0075] Taking the test task as the guide for verifying the effect, the running effect value output by the Lth test task is retrieved to form a simulation iteration result set, which is recorded as RS L = {Y L |VS j , j∈[1,J]}, where J represents the total number of running characteristics;

[0076] Based on the simulation iteration result set, the performance differences of the IGBT structure are verified:

[0077] Verification formula: Wherein, K represents the adjustment coefficient, and K is an integer; Y L+k |VS j Represents the verification sample cluster VS corresponding to the L+Kth test task jThe running effect value in , and Y L+k |VS j ∈RS L+K , R.S. L+K represents a simulation iteration result set composed of the operating effect values ​​output by the L+Kth test task, and U(L→L+K) represents the degree of performance difference between the IGBT structure running the Lth test task and the IGBT structure running the L+Kth test task.

[0078] Change the value of K, perform pairwise verification between the simulation iteration result sets, preset the performance difference degree threshold, and if the performance difference degree is less than or equal to the performance difference degree threshold, it is determined that there is performance similarity between the IGBT structure running the L+Kth test task and the IGBT structure running the Lth test task, and the IGBT structure running the L+Kth test task is used as the related structure of the IGBT structure running the Lth test task to form a related structure set, which is recorded as

[0079] Step S400, verifying the error weights of the performance test parameters between IGBT structures with similar performance, and analyzing the correlation between the IGBT structures;

[0080] Exemplarily, analyzing the correlation between IGBT structures includes:

[0081] In the relevant structure set DS L In the Lth test task, the input data cluster IN is retrieved respectively. L , as the IGBT structure running the Lth test task, call the input data cluster IN of the L+Kth test task L+K , IGBT structure running as the L+Kth test task;

[0082] Verify the error weight of the performance test parameters between the IGBT structures running the Lth test task and the L+Kth test task, and analyze the correlation between the IGBT structures. The formula is:

[0083]

[0084] In the formula, OV(X i |TS i ∈IN L ) indicates that under the IGBT structure of the Lth test task, in the test sample cluster TS i Performance test parameters selected in X i |TS i With the related structure set DS L The average error of the performance test parameters under the IGBT structure of each test task; NUM(DS L) represents the related structure set DS L The number of test tasks included in IN L+K represents the input data cluster of the L+Kth iteration test; [X i |TS i ∈IN L+K ] indicates that in the L+Kth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i ∈IN L+K ]=X i |TS i ;[X i |TS i ∈IN L ] indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i ∈IN L ]=X i |TS i , SD(IN L+K ) represents the error standard deviation of the performance test parameters under the IGBT structure running the L+Kth test task; EW(IN L+K ) represents the error weight of the performance test parameters of the IGBT structure running the L+Kth test task; SSV(IN L+K ) represents the correlation of the IGBT structure of the L+Kth test task run.

[0085] Select and output the test task with the greatest correlation. According to the above method, error weight is an important concept in measurement adjustment, which can reflect the relative importance of observation values ​​in observation results. It is used to reasonably weigh observation errors in the data processing process to make the observation results more reliable and accurate. It represents the relative accuracy or reliability of the observation values. The larger the mean error, that is, the standard deviation, the lower the accuracy of the observation value, and the smaller its weight, that is, the relative importance; conversely, the smaller the mean error, the higher the accuracy of the observation value, and the larger its weight; in the present invention, the error observation value, that is, the error mean value of the performance test parameter, reflects the error between the performance test parameter under one structural part of an IGBT structural model and the performance test parameter under the same structural part of another IGBT structural model. The larger the error observation value, the greater the degree of discreteness; the larger the error standard deviation, the larger the fluctuation range of the data, the smaller the error weight, and the smaller the correlation between the IGBT structural models, and then the IGBT structural model with the greatest correlation is selected, so that the relevant structural model can be quickly calibrated in a large number of simulation results.

[0086] In the third embodiment: an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and executable on the processor, and the processor implements the second embodiment when executing the computer program through computer executable instructions;

[0087] Exemplarily, computer storage media can use any combination of one or more computer-readable media. Computer-readable media can be computer-readable signal media or computer-readable storage media. Computer-readable storage media can be, for example, but not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or devices, or any combination of the above. More specific examples (non-exhaustive list) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this document, a computer-readable storage medium can be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, device or device.

[0088] Computer-readable signal media may include data signals propagated in baseband or as part of a carrier wave, which carry computer-readable program code. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination of the above. Computer-readable signal media may also be any computer-readable medium other than a computer-readable storage medium, which may send, propagate, or transmit a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0089] The program code contained in the computer-readable medium can be transmitted with any appropriate medium, including but not limited to wireless, wire, optical cable, etc., or any suitable combination of the above. The computer program code for performing the operation of the present invention can be written in one or more programming languages ​​or their combinations, and the programming language includes object-oriented programming languages-such as Java, Smalltalk, C++, and also includes conventional procedural programming languages-such as "C" language or similar programming languages. The program code can be executed completely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on the remote computer, or completely on the remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (for example, using an Internet service provider to connect through the Internet).

[0090] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0091] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A performance simulation processing method applied to IGBT structure testing, characterized in that: The method comprises the following steps: Step S100: Divide the storage space into a test database and a verification database, construct the test database based on the performance test parameters of the IGBT structure, and construct the verification database based on the operating characteristics of the IGBT structure; Step S200: Select different performance test parameters in the test database and combine them to form a test task as a simulated IGBT structure model, and record the simulation operation effect in the verification database; Step S300: Retrieve the operation effect value output by each test task to form a simulation iteration result set, verify the performance difference of the IGBT structure, and select IGBT structures with similar performance; Step S400: for IGBT structures with similar performance, verify the error weights of performance test parameters between the IGBT structures and analyze the correlation between the IGBT structures.

2. A performance simulation processing method for IGBT structure testing according to claim 1, characterized in that: The test database and the verification database are constructed as follows: The test database includes several test sample clusters, which are configured based on the IGBT structure, and one test sample cluster is configured for each structural component; the test data refers to performance test parameters compiled based on the structural component, and one performance test parameter category is compiled for each structural component, and the test sample cluster corresponding to the i-th performance test parameter category is recorded as TS i ; The verification database includes several verification sample clusters, which are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured corresponding to one operating characteristic. The verification sample cluster corresponding to the jth operating characteristic is recorded as VS j ; The verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and the operating effect value is obtained by using different test methods based on different operating characteristics, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

3. A performance simulation processing method for IGBT structure testing according to claim 2, characterized in that: The simulation includes: Construct an iterative test data processing model, take the test sample cluster as input, and take the verification sample cluster as output; record the input data cluster of the Lth iterative test as IN L ={X i |TS i , i∈[1,I]}, where I represents the total number of structural parts, X i Indicates performance test parameters, X i |TS i Indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i =X i , the input data cluster of the L+1th iteration test is recorded as IN L+1 , and IN L+1 ≠IN L ; Take one iteration test as one test task, and record the running effect value output during performance simulation in the verification sample cluster, and record the verification sample cluster VS corresponding to the Lth test task. j The running effect value in is recorded as Y L |VS j ; Among them, Y L Indicates the running effect value, and Y L =Y L |VS j , Y L |VS j ∈VS j ; when When the iteration test stops, NUM(TS i ) represents the test sample cluster TS i The number of performance test parameters included in .

4. The performance simulation processing method for IGBT structure testing according to claim 3, characterized in that: The analysis methods of the performance differences include: Taking the test task as the guide for verifying the effect, the running effect value output by the Lth test task is retrieved to form a simulation iteration result set, which is recorded as RS L = {Y L |VS j , j∈[1,J]}, where J represents the total number of running characteristics; Based on the simulation iteration result set, the performance differences of the IGBT structure are verified: Verification formula: In the formula, K represents the adjustment coefficient, and K is an integer. Y L+k |VS j Represents the verification sample cluster VS corresponding to the L+Kth test task j The running effect value in , and Y L+k |VS j ∈RS L+K , R.S. L+K represents a simulation iteration result set consisting of the operation effect values ​​output by the L+Kth test task, and U(L→L+K) represents the degree of performance difference between the IGBT structure running the Lth test task and the IGBT structure running the L+Kth test task; Change the value of K, perform pairwise verification between the simulation iteration result sets, preset the performance difference degree threshold, and if the performance difference degree is less than or equal to the performance difference degree threshold, it is determined that there is performance similarity between the IGBT structure running the L+Kth test task and the IGBT structure running the Lth test task, and the IGBT structure running the L+Kth test task is used as the related structure of the IGBT structure running the Lth test task to form a related structure set, which is recorded as 5. The performance simulation processing method for IGBT structure testing according to claim 4, characterized in that: The analysis of the correlation between IGBT structures includes: In the relevant structure set DS L In the Lth test task, the input data cluster IN is retrieved respectively. L , as the IGBT structure running the Lth test task, call the input data cluster IN of the L+Kth test task L+K , IGBT structure running as the L+Kth test task; Verify the error weight of the performance test parameters between the IGBT structures running the Lth test task and the L+Kth test task, and analyze the correlation between the IGBT structures. The formula is: In the formula, OV(X i |TS i ∈IN L ) indicates that under the IGBT structure of the Lth test task, in the test sample cluster TS i Performance test parameters selected in X i |TS i With the related structure set DS L The average error of the performance test parameters under the IGBT structure of each test task, NUM(DS L ) represents the related structure set DS L The number of test tasks included in IN L+K represents the input data cluster of the L+Kth iteration test, [X i |TS i ∈IN L+k ] indicates that in the L+Kth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i ∈IN L+K ]=X i |TS i ,[X i |TS i ∈IN L ] indicates that in the Lth iteration test, in the test sample cluster TS i A performance test parameter selected from i |TS i ∈IN L ]=X i |TS i , SD(IN L+K ) represents the error standard deviation of the performance test parameters under the IGBT structure running the L+Kth test task, EW(IN L+K ) represents the error weight of the performance test parameters of the IGBT structure running the L+Kth test task, SSV(IN L+K ) represents the correlation of the IGBT structure of the L+Kth test task run.

6. A performance simulation processing system for IGBT structure testing, executing the performance simulation processing method according to any one of claims 1 to 5, characterized in that: The system comprises: a data storage module, a simulation module, a performance analysis module and a structure calibration module; The data storage module is used to divide the test database and the verification database in the storage space, and the test database is formed based on the performance test parameters of the IGBT structure, and the verification database is formed based on the operating characteristics of the IGBT structure; The simulation module is used to select different performance test parameters in the test database and combine them to form a test task as a simulated IGBT structure model, and record the simulation operation effect in the verification database; The performance analysis module is used to retrieve the operating effect value output by each test task, form a simulation iteration result set, verify the performance difference of the IGBT structure, and select IGBT structures with similar performance; The structure calibration module is used to verify the error weights of performance test parameters between IGBT structures with similar performance, and analyze the correlation between IGBT structures.

7. A performance simulation processing system for IGBT structure testing according to claim 6, characterized in that: The data storage module includes a test database unit and a verification database unit; The test database unit is used to form a test database, wherein the test database includes a plurality of test sample clusters, wherein the test sample clusters are configured based on the IGBT structure, and one test sample cluster is configured correspondingly to one structural component, wherein the test data refers to performance test parameters compiled based on the structural component, and one performance test parameter category is compiled correspondingly to one structural component; The verification database unit is used to constitute a verification database, which includes a plurality of verification sample clusters. The verification sample clusters are configured based on the operating characteristics of the IGBT structure, and one verification sample cluster is configured corresponding to one operating characteristic; the verification data refers to the operating effect value of the IGBT structure output when the test sample cluster is used for performance simulation, and different test methods are used based on different operating characteristics to obtain the operating effect value, wherein one operating characteristic uses one test method and obtains one corresponding operating effect value.

8. The performance simulation processing system for IGBT structure testing according to claim 7, characterized in that: The simulation module includes building an iterative test data processing model, taking a test sample cluster as input, taking a verification sample cluster as output, taking one iterative test as one test task, and recording the running effect value output during performance simulation in the verification sample cluster.

9. The performance simulation processing system for IGBT structure testing according to claim 8, characterized in that: The performance analysis module includes taking the test task as the guide for verifying the effect, based on the operation effect value, verifying the performance difference of the IGBT structure, and forming a related structure set.

10. The performance simulation processing system for IGBT structure testing according to claim 9, characterized in that: The structure calibration module includes, based on the relevant structure set, verifying the error weights of the performance test parameters between the test tasks, analyzing the correlation between the IGBT structures, and selecting and outputting the test task with the greatest correlation.

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