Conductive treatment method for nonmetal surface of organic packaging substrate

Abstract

The invention is suitable for the technical field of surface treatment, and provides an organic packaging substrate non-metal surface conductive treatment method which comprises the following steps: carrying out oil removal and charge adjustment treatment on an organic packaging substrate, and then carrying out five-stage countercurrent DI water washing treatment; the organic packaging substrate is placed under the temperature condition of 20-40 DEG C, conductive deposition treatment is conducted through a non-metal surface treating agent, the pressure of a water jet is 5-30 Kg, and the linear speed is 2-4 M / min; carrying out primary drying treatment on the organic packaging substrate at the temperature of 80-100 DEG C; the organic packaging substrate is placed at the temperature of 20-40 DEG C to be subjected to micro-etching treatment; and carrying out secondary drying treatment on the organic packaging substrate at the temperature of 80-100 DEG C. The conductive layer formed by the invention has the characteristics of acid resistance, alkali resistance and high temperature resistance, is strong in binding force and more stable in quality, and effectively solves the problems of serious environmental pollution and low reliability of a traditional packaging substrate surface treatment process. And meanwhile, a low-cost SAP process route can be realized through adjustment.

Description

Technical Field

[0001] The present application belongs to the field of surface treatment technology, and in particular relates to a method for conducting a non-metallic surface of an organic packaging substrate. Background Art

[0002] The hole metal process is one of the key technologies in the manufacturing of printed circuit boards. Hole conduction is the key core technology to achieve interconnection and conductivity between the layers of electronic circuit boards. The hole metallization requirements are very strict. It needs to have good conductivity and mechanical toughness. There should be no stratification, bubbles, drilling chips, or cracks in the hole. Severe oxidation is not allowed. The hole resistance is required to be less than 1000uΩ, and some products require less than 500uΩ. At present, with the development of high-precision and precision electronic products, the requirements for the characteristics of metallized holes are becoming more and more stringent.

[0003] The differences between packaging substrates and traditional PCBs are mainly in the following aspects: 1. The unit quantity level of the design of circuits and holes is micron-level for IC substrates, while it is millimeter-level for PCBs, that is, the packaging substrate is smaller and more precise; 2. In terms of application areas, PCBs are mainly designed for various electronic products, and IC substrates are designed for the manufacture of various chips, that is to say, IC substrates are supplied to packaging factories of various ICs to be prepared into various IC components, and these prepared components will eventually be mounted on the PCB; 3. There will also be obvious differences in the production process and equipment and in quality control and equipment, with higher equipment precision requirements and more complicated processes.

[0004] The traditional chemical copper hole metallization conduction process mainly includes alkaline whole hole degreasing, three-stage countercurrent water washing, micro-etching, two-stage countercurrent water washing, pre-impregnation, activation, chemical copper plating and other processes; this process is a catalytic redox reaction, and there will be more by-products generated. The process time of vertical copper deposition is 60-90 minutes, and the process time of horizontal copper deposition is 30-50 minutes. There are problems such as long copper plating process, low efficiency, large environmental pollution, acid and alkali resistance, oxidation resistance, and the main material has a certain service life and cannot be recycled. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a method for conducting the non-metallic surface of an organic packaging substrate, aiming to solve the problems of the traditional chemical copper process, such as long copper plating process, low efficiency, large environmental pollution, acid and alkali resistance, oxidation resistance, and main materials having a certain service life and cannot be recycled.

[0006] The embodiment of the present application is implemented as follows: a method for conducting a non-metallic surface of an organic packaging substrate, comprising: The organic packaging substrate is placed under a temperature of 30 to 60°C for degreasing and charge adjustment; The organic packaging substrate after degreasing and charge adjustment is placed in a five-stage countercurrent DI water washing process at a temperature of 10-40°C; The organic packaging substrate after water washing is placed under a temperature of 20-40°C, and a conductive deposition treatment is performed using a non-metallic surface treatment agent, the water jet pressure is 5-30Kg, and the line speed is 2-4M / min; the non-metallic surface treatment agent is prepared by compounding a nano-carbon material with a diameter of 10-100nm, a stabilizer, a surfactant, an ionic conductive and pH adjusting agent, a reducing agent, an organic solvent or water; The organic packaging substrate after the conductive deposition treatment is placed under a temperature condition of 80-100° C. for a drying treatment; The organic packaging substrate after the primary drying is placed under a temperature of 20-40°C for micro-etching; The organic packaging substrate after micro-etching is placed under a temperature condition of 80-100° C. for secondary drying.

[0007] Preferably, the non-metallic surface treatment agent comprises the following components in percentage by mass: 1-5% of nanocarbon material with a diameter of 10-100nm, 0.1-0.5% of a stabilizer, 0.01-1% of a surfactant, 1-2% of an ionic conductive and pH adjusting agent, 0.1-0.5% of a reducing agent, and 91-95% of an organic solvent or water.

[0008] Preferably, the non-metallic surface treatment agent has a pH value of 2-9 and a solid content of 0.01-1%.

[0009] Preferably, the stabilizer is one or more of ANP, PVL, PVP, and CMC; The surfactant is one or more of a cationic quaternary ammonium salt surfactant, an OP emulsifier, and a nonionic polyethylene glycol series wetting agent; The ionic conductive and pH adjusting agent is one or more of organic amine, ammonia water, sodium hydroxide, potassium hydroxide, sulfuric acid or quaternary ammonium salt surfactant, phosphate surfactant; The reducing agent is one or more of an aldehyde reducing agent, a hypophosphorous acid reducing agent, and an alcohol acid reducing agent; The organic solvent is one or more of methanol, ethanol, propanol, methyl ethyl ether and ethyl ether.

[0010] Preferably, in the step of subjecting the degreased and charge-adjusted organic packaging substrate to a five-stage countercurrent DI water washing treatment at a temperature of 10-40° C., the water changing frequency conductivity is 1-10 S / m, and the water flow rate is 5-30 L / min.

[0011] Preferably, the organic packaging substrate is degreased and charge adjusted using a degreasing and charge adjusting agent, the concentration of the degreasing and charge adjusting agent is 1-10%, the pH value is 10-14, the alkali equivalent is 0.01-0.25N, and the service life is 15-25mg / L copper content.

[0012] Preferably, the organic packaging substrate after one drying is subjected to micro-etching treatment at a temperature of 20-40° C. using a micro-etching agent, wherein the micro-etching agent is compounded from sulfuric acid and 50% hydrogen peroxide, and has a service life of 5-40 g / L copper content.

[0013] Preferably, the concentration of the sulfuric acid is 40-100 g / L; the concentration of the 50% hydrogen peroxide is 20-40 g / L.

[0014] The method for conducting the non-metallic surface of an organic packaging substrate provided in the embodiment of the present application uses a non-metallic surface treatment agent to perform a conducting deposition treatment, and realizes low-resistance conduction by depositing the non-metallic surface conductor in the hole. The non-metallic surface conducting treatment process takes only 4-8 minutes, which simplifies the process and improves the yield rate, and further improves efficiency, saves resources, reduces environmental pollution, has low cost, and the main materials can be recycled. In addition, the formed conductive layer has acid and alkali resistance and high temperature resistance, strong bonding force, and more stable quality, which effectively solves the problems of large environmental pollution and low reliability of chemical copper and black hole processes of traditional packaging substrates. DETAILED DESCRIPTION

[0015] In order to make the purpose, technical solution and advantages of the present application more clear, the present application is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

[0016] The present application provides a method for conducting a non-metallic surface of an organic packaging substrate, comprising: The organic packaging substrate is placed under a temperature of 30 to 60°C for degreasing and charge adjustment; The organic packaging substrate after degreasing and charge adjustment is placed under a temperature of 10-40°C for a five-stage countercurrent DI water washing process; The organic packaging substrate after water washing is placed at a temperature of 20-40°C, and a conductive deposition treatment is performed using a non-metallic surface treatment agent, the water jet pressure is 5-30Kg, and the line speed is 2-4M / min; the organic packaging substrate after the conductive deposition treatment is placed at a temperature of 80-100°C for a drying treatment; The organic packaging substrate after the primary drying is placed under a temperature of 20-40°C for micro-etching; The organic packaging substrate after micro-etching is placed under a temperature condition of 80-100° C. for secondary drying.

[0017] Among them, the oil removal and charge adjustment treatment, five-stage countercurrent DI water washing treatment, non-metallic conductive deposition treatment, primary drying treatment, micro-etching treatment and secondary drying treatment in the above-mentioned processes can be implemented based on existing equipment on the market. For example, the equipment can be TGM-ICS-H-000 horizontal non-metallic surface conductive processing production equipment produced by Julong, Dongwei, and Yuzhou.

[0018] Among them, the degreasing and charge adjusting agent is used to degreasing and charge adjusting the organic packaging substrate after the whole hole, and the line speed is 2~4M / min (the working time of the workpiece is about 2-4min); the concentration of the degreasing and charge adjusting agent is 1~10%, the pH value is 10~14, the alkali equivalent is 0.01~0.25N, and the service life is 15~25mg / L of copper content. The purpose of this process is to remove the pollution on the surface of the organic packaging substrate after the whole hole, and to adjust the charge, so that the adsorption of the non-metallic surface conductive layer is more firm. The degreasing and charge adjusting agent can be the TGM-ICS-001 model product purchased from Symene Gold.

[0019] Among them, the organic packaging substrate after degreasing and charge adjustment is placed in a five-stage countercurrent DI water washing process at a temperature of 10~40℃, the water change frequency conductivity is 1~10S / m, the water flow rate is 5~30 L / min, and the line speed is 2~4M / min (the operation time of the workpiece is about 2-4min). The purpose of this process is to clean the excess degreasing and charge adjustment agent to avoid residual contamination of the subsequent process solution.

[0020] Among them, the organic packaging substrate after water washing is placed at a temperature of 20~40℃, and a non-metallic surface treatment agent is used for conductive deposition treatment. The water jet pressure is 5~30Kg and the line speed is 2~4M / min (the operation time of the workpiece is about 6-8min). This process is the most critical core process of the non-metallic surface conductive layer, replacing the flash plating process in the traditional process.

[0021] The non-metallic surface treatment agent is prepared by compounding a nano-carbon material with a diameter of 10-100 nm, a stabilizer, a surfactant, an ionic conductive and pH adjusting agent, a reducing agent, an organic solvent or water.

[0022] Preferably, the non-metallic surface treatment agent comprises the following components in percentage by mass: 1-5% of nanocarbon material with a diameter of 10-100nm, 0.1-0.5% of a stabilizer, 0.01-1% of a surfactant, 1-2% of an ionic conductive and pH adjusting agent, 0.1-0.5% of a reducing agent, and 91-95% of an organic solvent or water.

[0023] Preferably, the non-metallic surface treatment agent has a pH value of 2-9 and a solid content of 0.01-1%.

[0024] Wherein, the stabilizer can be a small molecule or a macromolecule such as one or more of ANP, PVL, PVP, CMC, etc. The surfactant can be an ionic, nonionic or amphoteric surfactant such as a cationic quaternary ammonium salt surfactant, an OP emulsifier, a nonionic polyethylene glycol series wetting agent, etc., one or more of which are used to reduce surface tension and wet or electrically treat the surface of the substrate. The ionic conductive and pH adjusting agent can be a chemical with a certain ion balance ability, including an electrolyte or a surfactant, such as one or more of organic amines, ammonia water, sodium hydroxide, potassium hydroxide, sulfuric acid or a quaternary ammonium salt surfactant, a phosphate surfactant, etc. The reducing agent can be one or more of organic or inorganic reducing agents such as aldehydes, hypophosphorous acids, alkyds, such as formaldehyde, acetaldehyde, etc., one or more of formic acid, acetic acid, phosphorous acid, and hypophosphorous acid products. The organic solvent is one or more of methanol, ethanol, propanol, methyl ethyl ether, and ethyl ether.

[0025] Among them, the organic packaging substrate after the conductive deposition treatment is placed at a temperature of 80~100℃ for a drying treatment, the air knife pressure is 300-1000Pa, and the line speed is 2~4M / min (the working time of the workpiece is about 2-4min). It is a process for fixing the conductive layer on the non-metal surface and removing moisture.

[0026] Among them, the organic packaging substrate after one drying is subjected to micro-etching treatment at a temperature of 20-40°C using a micro-etching agent, and the line speed is 2-4M / min (the operation time of the workpiece is about 30-50s). The micro-etching agent is compounded with sulfuric acid and 50% hydrogen peroxide, and the service life is 5-40g / L of copper content. The concentration of the sulfuric acid is 40-100g / L; the concentration of the 50% hydrogen peroxide is 20-40 g / L. This is a process in which the non-metallic surface conductive layer deposited on the copper surface is removed by micro-etching the copper surface to remove the nano-scale non-metallic surface conductive layer and the copper layer, ensuring that the consistency and flatness of the copper surface are maintained during the subsequent copper surface electroplating process. The configuration method of the micro-etching agent can be to mix sulfuric acid and hydrogen peroxide in a certain proportion, ensure that violent stirring is avoided during the mixing process to prevent the decomposition of hydrogen peroxide, and pay attention to safety during the preparation process to avoid direct contact with the skin and inhalation of steam.

[0027] Among them, the organic packaging substrate after micro-etching is placed at a temperature of 80~100℃ for secondary drying, the air knife pressure is 300-1000Pa, and the line speed is 2~4M / min (the working time of the workpiece is about 2-4min). This is the process of further fixing the non-metallic surface conductive layer and removing moisture.

[0028] The following is a detailed description of the method for treating the non-metallic surface of the organic packaging substrate of the present application with specific embodiments, as shown below. The experimental methods used in the following embodiments are conventional methods unless otherwise specified; the materials, reagents, etc. used can be obtained from commercial channels unless otherwise specified.

[0029] Equipment used: TGM-ICS-H-000 horizontal non-metallic surface conductive processing production equipment from Julong, Dongwei, Yuzhou, etc.

[0030] Reagents used: Oil removal and charge adjustment agent (model TGM-ICS-001).

[0031] The selected workpiece is a conventional organic packaging substrate (IC substrate) with a size of 510*410 and a hole already drilled.

[0032] Embodiment 1: Method for treating non-metallic surface of organic packaging substrate to make it conductive Preparation of non-metallic surface treatment agent: weigh the raw materials according to the following mass percentages and mix them evenly: 3.79% nanocarbon material with a diameter of 10-100nm, 0.1% ANP stabilizer, 0.01% OP emulsifier, 1% 20% potassium hydroxide solution, 0.1% acetic acid, and 95% ethanol.

[0033] Process 1: Degreasing and charge adjusting agent are used to degreasing and charge adjusting agent on the organic packaging substrate after hole filling, the temperature is 30°C, the line speed is 2M / min, and the time is 4min; the concentration of the degreasing and charge adjusting agent is 1%, the pH value is 10, the alkali equivalent is 0.01N, and the service life is 15mg / L of copper content.

[0034] Step 2: The organic packaging substrate after degreasing and charge adjustment is subjected to a five-stage countercurrent DI water washing treatment at a temperature of 20°C, a water change frequency of 1 S / m, a water flow rate of 5 L / min, and a line speed of 2 M / min. The time is 4 minutes; Step 3: Place the washed organic packaging substrate at a temperature of 20°C and perform conductive deposition treatment using a non-metallic surface treatment agent, with a water jet pressure of 5Kg and a line speed of 2M / min for 8 minutes; the pH value of the non-metallic surface treatment agent is 6 and the solid content is 0.01%.

[0035] Step 4: Place the organic packaging substrate after the conductive deposition treatment at a temperature of 80°C for a drying process, with an air knife pressure of 300pa and a line speed of 2M / min for 4 minutes; Step 5: using a micro-etching agent to micro-etch the organic packaging substrate after the primary drying at a temperature of 20°C, with a line speed of 2M / min and a time of 60s; the micro-etching agent is prepared by compounding sulfuric acid and 50% hydrogen peroxide, and has a service life of 5g / L copper content, the concentration of the sulfuric acid is 40g / L, and the concentration of the hydrogen peroxide is 20 g / L; Step 6: Place the organic packaging substrate after micro-etching at 80°C for secondary drying, with an air knife pressure of 300pa and a line speed of 4M / min for 4min; Embodiment 2: Method for treating non-metallic surface of organic packaging substrate to make it conductive Preparation of non-metallic surface treatment agent: weigh the raw materials according to the following mass percentages and mix them evenly: 4% nanocarbon material with a diameter of 10-100nm, 0.2% PVP stabilizer, 0.03% OP emulsifier, 1.57% 20% potassium hydroxide solution, 0.2% acetic acid, and 94% water.

[0036] Process 1: Degreasing and charge adjusting agent is used to degreasing and charge adjusting agent on the organic packaging substrate after hole filling, the temperature is 40°C, the line speed is 2.5M / min, and the time is 3.5min; the concentration of the degreasing and charge adjusting agent is 2%, the pH value is 11, the alkali equivalent is 0.05N, and the service life is 18mg / L of copper content.

[0037] Process 2: The organic packaging substrate after degreasing and charge adjustment is subjected to a five-stage countercurrent DI water washing treatment at a temperature of 25°C, a water change frequency of 3 S / m, a water flow rate of 10 L / min, a line speed of 2.5 M / min, and a time of 3.5 min.

[0038] Step 3: Place the organic packaging substrate after water washing at a temperature of 25°C, and use a non-metallic surface treatment agent to perform conductive deposition treatment. The water jet pressure is 10Kg, the line speed is 2.5M / min, and the time is 7min; the pH value of the non-metallic surface treatment agent is 7, and the solid content is 0.03%.

[0039] Step 4: Place the organic packaging substrate after the conductive deposition treatment at a temperature of 85° C. for a drying treatment, with an air knife pressure of 500 Pa, a line speed of 2.5 M / min, and a drying time of 3.5 min.

[0040] Step 5: The organic packaging substrate after the primary drying is subjected to micro-etching treatment at a temperature of 25° C. using a micro-etching agent, with a line speed of 2.5 M / min and a time of 50 s. The micro-etching agent is a compound of sulfuric acid and 50% hydrogen peroxide, and has a service life of 10 g / L copper content. The concentration of the sulfuric acid is 50 g / L; the concentration of the hydrogen peroxide is 25 g / L.

[0041] Step 6: Place the organic packaging substrate after micro-etching at a temperature of 85° C. for secondary drying, with an air knife pressure of 500 pa, a line speed of 2.5 M / min, and a drying time of 3.5 min.

[0042] Embodiment 3: Method for treating non-metallic surface of organic packaging substrate for electrical conductivity Preparation of non-metallic surface treatment agent: weigh the raw materials according to the following mass percentages and mix them evenly: 3% nanocarbon material with a diameter of 10-100nm, 0.5% PVP stabilizer, 1% OP emulsifier, 20% potassium hydroxide solution, 0.5% acetic acid, and 93% organic solvent or water.

[0043] Process 1: Degreasing and charge adjusting agent is used to degreasing and charge adjusting agent on the organic packaging substrate after hole filling, the temperature is 45°C, the line speed is 3M / min, and the time is 3min; the concentration of the degreasing and charge adjusting agent is 7%, the pH value is 12, the alkali equivalent is 0.18N, and the service life is 20mg / L of copper content.

[0044] Process 2: The organic packaging substrate after degreasing and charge adjustment is subjected to a five-stage countercurrent DI water washing treatment at a temperature of 30°C, a water change frequency of 7 S / m, a water flow rate of 22 L / min, a line speed of 3M / min, and a time of 3min.

[0045] Step 3: placing the washed organic packaging substrate at a temperature of 30°C, and performing conductive deposition treatment using a non-metallic surface treatment agent, with a water jet pressure of 15Kg, a line speed of 3M / min, and a time of 6.8min; the pH value of the non-metallic surface treatment agent is 7.5, and the solid content is 0.05%.

[0046] Step 4: Place the organic packaging substrate after the conductive deposition treatment at a temperature of 90° C. for a drying treatment, with an air knife pressure of 600 Pa, a line speed of 3 M / min, and a drying time of 3 min.

[0047] Step 5: The organic packaging substrate after the primary drying is subjected to micro-etching treatment at a temperature of 20-40°C using a micro-etching agent, with a line speed of 3 M / min and a time of 45 s. The micro-etching agent is a compound of sulfuric acid and 50% hydrogen peroxide, and has a service life of 15 g / L copper content. The concentration of the sulfuric acid is 45 g / L; the concentration of the hydrogen peroxide is 28 g / L.

[0048] Step 6: Place the organic packaging substrate after micro-etching at a temperature of 92° C. for secondary drying, with an air knife pressure of 600 Pa, a line speed of 3 M / min, and a time of 3 min.

[0049] Embodiment 4: Method for treating non-metallic surface of organic packaging substrate for electrical conductivity Preparation of non-metallic surface treatment agent: weigh the raw materials according to the following mass percentages and mix them evenly: 4% nanocarbon material with a diameter of 10-100nm, 0.4% PVP stabilizer, 0.07% OP emulsifier, 1.63% 20% potassium hydroxide solution, 0.4% acetic acid, and 93.5% organic solvent or water.

[0050] Process 1: Degreasing and charge adjusting agent is used to degreasing and charge adjusting agent on the organic packaging substrate after hole filling, the temperature is 50°C, the line speed is 3.5M / min, and the time is 2.5min; the concentration of the degreasing and charge adjusting agent is 8%, the pH value is 12.5, the alkali equivalent is 0.21N, and the service life is 20mg / L of copper content.

[0051] Process 2: The organic packaging substrate after degreasing and charge adjustment is subjected to a five-stage countercurrent DI water washing treatment at a temperature of 35°C, a water change frequency of 9 S / m, a water flow rate of 25 L / min, a line speed of 3.5 M / min, and a time of 2.5 min.

[0052] Step 3: Place the washed organic packaging substrate at a temperature of 35°C and perform conductive deposition treatment using a non-metallic surface treatment agent. The water jet pressure is 25Kg, the line speed is 3.5M / min, and the time is 6.5min. The pH value of the non-metallic surface treatment agent is 8.5, and the solid content is 0.08%.

[0053] Step 4: Place the organic packaging substrate after the conductive deposition treatment at a temperature of 95° C. for a drying treatment, with an air knife pressure of 900 pa, a line speed of 3.5 M / min, and a drying time of 2.5 min.

[0054] Step 5: The organic packaging substrate after the primary drying is subjected to micro-etching treatment at a temperature of 30°C using a micro-etching agent, with a line speed of 3.5 M / min and a time of 40 s; the micro-etching agent is compounded from sulfuric acid and 50% hydrogen peroxide, and has a service life of 35 g / L copper content, and the concentration of the sulfuric acid is 80 g / L; the concentration of the hydrogen peroxide is 20 g / L.

[0055] Step 6: Place the organic packaging substrate after micro-etching at a temperature of 95° C. for secondary drying, with an air knife pressure of 900 pa, a line speed of 3.5 M / min, and a drying time of 2.5 min.

[0056] Embodiment 5: Method for treating non-metallic surface of organic packaging substrate for electrical conductivity Preparation of non-metallic surface treatment agent: weigh the raw materials according to the following mass percentages and mix them evenly: 4% nanocarbon material with a diameter of 10-100nm, 0.5% PVP stabilizer, 1% OP emulsifier, 20% potassium hydroxide solution, 0.5% acetic acid, and 92% water.

[0057] Process 1: Degreasing and charge adjusting agent is used to degreasing and charge adjusting agent on the organic packaging substrate after hole filling, the temperature is 60°C, the line speed is 4M / min, and the time is 2min; the concentration of the degreasing and charge adjusting agent is 10%, the pH value is 14, the alkali equivalent is 0.25N, and the service life is 25mg / L of copper content.

[0058] Process 2: The organic packaging substrate after degreasing and charge adjustment is subjected to a five-stage countercurrent DI water washing treatment at a temperature of 40°C, a water change frequency of 10 S / m, a water flow rate of 30 L / min, a line speed of 4 M / min, and a time of 2 min.

[0059] Step 3: Place the washed organic packaging substrate at 40°C and perform conductive deposition treatment using a non-metallic surface treatment agent. The water jet pressure is 30Kg, the line speed is 4M / min, and the time is 6min. The pH value of the non-metallic surface treatment agent is 9 and the solid content is 1%.

[0060] Step 4: Place the organic packaging substrate after the conductive deposition treatment at a temperature of 100° C. for a drying treatment, with an air knife pressure of 1000 Pa, a line speed of 4 M / min, and a drying time of 2 min.

[0061] Step 5: The organic packaging substrate after the primary drying is subjected to micro-etching treatment at a temperature of 40°C using a micro-etching agent, with a line speed of 4 M / min and a time of 30 s; the micro-etching agent is compounded from sulfuric acid and 50% hydrogen peroxide, and has a service life of a copper content of 40 g / L, a concentration of sulfuric acid of 100 g / L, and a concentration of hydrogen peroxide of 40 g / L.

[0062] Step 6: Place the organic packaging substrate after micro-etching at a temperature of 100° C. for secondary drying, with an air knife pressure of 1000 Pa, a line speed of 4 M / min, and a drying time of 2 min.

[0063] Using test pieces (the test pieces are 60*100mm FR-4 insulating board materials), the processes for depositing non-metallic surface conductivity in the above Examples 1-5 were respectively used for production. The resistance of the produced test pieces with a long side of 100mm was measured to be between 100Ω and 1000Ω, indicating that the deposition effect of the non-metallic surface conductive layer in Examples 1-5 was good.

[0064] Furthermore, the organic encapsulation substrates obtained by the treatment of Examples 1-5 were subjected to acid resistance, alkali resistance, carbonic acid solution resistance, oxidation resistance and tensile test, and the test results are shown in Table 1 below: Table 1 The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

[0065] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for treating a non-metallic surface of an organic packaging substrate to make it conductive, characterized in that: include: The organic packaging substrate is placed under a temperature of 30 to 60°C for degreasing and charge adjustment; The organic packaging substrate after degreasing and charge adjustment is placed in a five-stage countercurrent DI water washing process at a temperature of 10-40°C; The organic packaging substrate after water washing is placed under a temperature of 20-40°C, and a conductive deposition treatment is performed using a non-metallic surface treatment agent, the water jet pressure is 5-30Kg, and the line speed is 2-4M / min; the non-metallic surface treatment agent is prepared by compounding a nano-carbon material with a diameter of 10-100nm, a stabilizer, a surfactant, an ionic conductive and pH adjusting agent, a reducing agent, an organic solvent or water; The organic packaging substrate after the conductive deposition treatment is placed under a temperature condition of 80-100° C. for a drying treatment; The organic packaging substrate after the primary drying is placed under a temperature of 20-40°C for micro-etching; The organic packaging substrate after micro-etching is placed under a temperature condition of 80-100° C. for secondary drying.

2. The method for treating the non-metallic surface of an organic packaging substrate to be conductive according to claim 1, characterized in that: The non-metallic surface treatment agent includes the following components in percentage by mass: 1-5% of nanocarbon material with a diameter of 10-100nm, 0.1-0.5% of a stabilizer, 0.01-1% of a surfactant, 1-2% of an ionic conductive and pH adjusting agent, 0.1-0.5% of a reducing agent, and 91-95% of an organic solvent or water.

3. The method for treating the non-metallic surface of an organic packaging substrate to make it conductive according to claim 1, characterized in that: The pH value of the non-metallic surface treatment agent is 2-9, and the solid content is 0.01-1%.

4. The method for treating the non-metallic surface of an organic packaging substrate to make it conductive according to claim 1, characterized in that: The stabilizer is one or more of ANP, PVL, PVP and CMC; The surfactant is one or more of a cationic quaternary ammonium salt surfactant, an OP emulsifier, and a nonionic polyethylene glycol series wetting agent; The ionic conductive and pH adjusting agent is one or more of organic amine, ammonia water, sodium hydroxide, potassium hydroxide, sulfuric acid or quaternary ammonium salt surfactant, phosphate surfactant; The reducing agent is one or more of an aldehyde reducing agent, a hypophosphorous acid reducing agent, and an alcohol acid reducing agent; The organic solvent is one or more of methanol, ethanol, propanol, methyl ethyl ether and ethyl ether.

5. The method for treating a non-metallic surface of an organic packaging substrate to make it conductive according to claim 1, characterized in that: In the step of placing the organic packaging substrate after oil removal and charge adjustment treatment under a temperature condition of 10-40° C. for five-stage countercurrent DI water washing treatment, the water changing frequency conductivity is 1-10S / m, and the water flow rate is 5-30 L / min.

6. The method for treating the non-metallic surface of an organic packaging substrate to be conductive according to claim 1, characterized in that: The organic packaging substrate is degreased and charge adjusted by using a degreasing and charge adjusting agent, wherein the concentration of the degreasing and charge adjusting agent is 1-10%, the pH value is 10-14, the alkali equivalent is 0.01-0.25N, and the service life is 15-25mg / L of copper content.

7. The method for treating a non-metallic surface of an organic packaging substrate to make it conductive according to claim 1, characterized in that: The organic packaging substrate after one drying is subjected to micro-etching treatment at a temperature of 20-40°C using a micro-etching agent, wherein the micro-etching agent is compounded from sulfuric acid and 50% hydrogen peroxide, and has a service life of 5-40 g / L copper content.

8. The method for treating the non-metallic surface of an organic packaging substrate to be conductive according to claim 7, characterized in that: The concentration of the sulfuric acid is 40-100 g / L; the concentration of the 50% hydrogen peroxide is 20-40 g / L.

9. The method for treating a non-metallic surface of an organic packaging substrate to be conductive according to claim 1, characterized in that: In the step of placing the organic packaging substrate after the conductive deposition process at a temperature of 80-100° C. for a drying process, the air knife pressure is 300-1000 Pa.

10. The method for treating a non-metallic surface of an organic packaging substrate to make it conductive according to claim 1, characterized in that: In the step of placing the organic packaging substrate after micro-etching at a temperature of 80-100° C. for secondary drying, the air knife pressure is 300-1000 Pa.

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