Wafer level packaging method of suction type filling support material and chip structure

Abstract

The invention discloses a wafer-level packaging method and a chip structure of a suction type filling support material, and the method comprises the following steps: providing a wafer-level packaging structure which comprises a first wafer, a second wafer and a connecting part for bonding the first wafer and the second wafer, a cutting channel cavity communicated with the outside is formed between at least part of adjacent connecting parts; and the cutting channel cavity is sucked, and a supporting material is supplemented into the cutting channel cavity. The cutting channel cavity is good in supporting effect, and the wafer-level packaging structure is not prone to being broken and damaged.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor packaging and testing, and in particular to a wafer-level packaging method and a chip structure of a suction-type filling support material. Background Art

[0002] Wafer-level packaging technology includes wafer bonding technology. More and more semiconductor devices are beginning to use bonding to achieve the purpose of pre-bonding protection of devices, functional device stacking, etc., and bonding is often no longer 100% flat bonding, but through pre-processing of the bonding surface, a cavity structure is formed. From a simple metal bonding layer cavity of a few microns to a silicon cavity of tens or hundreds of microns, the cutting path area forms a pipeline cavity structure that runs horizontally and vertically.

[0003] The existence of such a cutting path cavity has a great impact on the subsequent packaging. For the chip-level packaging process, generally, cutting is performed first, and then chip-level packaging is performed. In this case, only the impact of cutting needs to be considered, such as the risk of damage and cracks in the bonding layer. For wafer-level packaging, the existence of a cutting path cavity will bring more problems and troubles, such as grinding thinning cracks, cutting path corrosion, and cutting abnormalities.

[0004] In the prior art, after wafer bonding, the glue is added to the edge to make the glue flow into the cutting path cavity to achieve the purpose of support. However, it is difficult to control the extent to which the glue is added into the cutting path. Considering that the glue cannot produce obvious volatile gas, the material usually selected will not have good fluidity, so the distance it can penetrate from the edge to the inside is limited, and most of the middle area cannot be filled with glue, so the support effect is limited. Summary of the invention

[0005] One of the purposes of the present invention is to provide a wafer-level packaging method for filling a support material by suction, so as to solve the technical problem of poor support effect of the saw path cavity in the prior art.

[0006] One of the objectives of the present invention is to provide a chip structure.

[0007] To achieve one of the above-mentioned purposes of the invention, a wafer-level packaging method for filling a support material by suction in one embodiment of the present invention comprises the following steps:

[0008] A wafer-level packaging structure is provided, the wafer-level packaging structure comprising a first wafer, a second wafer, and a connecting portion bonding the first wafer and the second wafer, wherein at least a portion of adjacent connecting portions has a cutting path cavity communicating with the outside;

[0009] The cutting path cavity is evacuated and the supporting material is filled into the cutting path cavity.

[0010] As a further improvement of an embodiment of the present invention, the outer end of the cutting path cavity is connected to the outside.

[0011] As a further improvement of an embodiment of the present invention, “sucking the cutting path cavity and filling the cutting path cavity with supporting material” comprises the steps of:

[0012] Placing the wafer-level packaging structure into a vacuum adhesive tank; the vacuum adhesive tank comprises a vacuum space, a support material located in the vacuum space, and a connecting pipe partially disposed on the support material, the wafer-level packaging structure is located in the vacuum space, and the connecting pipe is connected to the cutting path cavity;

[0013] The vacuum space is sucked to draw out the gas in the cutting path cavity, and then the supporting material is sucked in through the connecting pipe.

[0014] As a further improvement of an embodiment of the present invention, “sucking the cutting path cavity and filling the cutting path cavity with supporting material” comprises the steps of:

[0015] A vacuum is drawn at the first end of the cutting path cavity, and a material is filled at the second end of the cutting path cavity. The first end and the second end are two ends of the cutting path cavity connected to the outside.

[0016] As a further improvement of one embodiment of the present invention, the cutting road cavity includes a plurality of transverse cutting roads that penetrate horizontally and a plurality of longitudinal cutting roads that penetrate longitudinally, wherein the transverse and longitudinal directions are horizontal and perpendicular to each other; a plurality of the transverse cutting roads are arranged along the longitudinal direction, and a plurality of the longitudinal cutting roads are arranged along the transverse direction, and the transverse cutting roads and the longitudinal cutting roads are cross-connected.

[0017] As a further improvement of an embodiment of the present invention, the connecting portion is an annular structure, and the transverse cutting paths and the longitudinal cutting paths are alternately arranged between adjacent annular connecting portions.

[0018] As a further improvement of an embodiment of the present invention, the dicing street cavities in all regions of the first wafer are filled with supporting material.

[0019] As a further improvement of an embodiment of the present invention, the method comprises the steps of: cutting corresponding cutting path cavities to form a plurality of independent chip structures.

[0020] As a further improvement of an embodiment of the present invention, “providing a wafer-level packaging structure” includes the steps of:

[0021] Providing a first wafer and a second wafer, wherein the first wafer is provided with a plurality of chip modules, and at least some of the chip modules have a sealing functional area exposed to a first surface of the first wafer;

[0022] forming a connection portion on the first surface surrounding at least a portion of the outer periphery of the sealing functional area;

[0023] The connection portion and the second wafer are bonded together.

[0024] As a further improvement of an embodiment of the present invention, “bonding the connection portion to the second wafer” comprises the steps of:

[0025] The connection portion and the second wafer are connected by dielectric bonding or non-dielectric bonding, and the wafer-level packaging structure includes a bonding layer arranged between the connection portion and the second wafer.

[0026] To achieve one of the above-mentioned objects of the invention, an embodiment of the present invention provides a chip structure, using a wafer-level packaging method of suction-filled supporting material as described in any one of the above items, wherein the chip structure is formed by cutting the cutting path cavity of the wafer-level packaging structure.

[0027] Compared with the prior art, the present invention provides a wafer-level packaging method of suction-filling supporting materials. After the first wafer and the second wafer are bonded together, the cutting path cavity is sucked and the supporting material is filled in. The effect of filling the cutting path cavity with the supporting material is better. During the thinning and cutting process, the wafer-level packaging structure is not easy to be broken or damaged. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] illustrate

[0029] Figure 1 The present invention relates to a wafer-level packaging method for forming a chip structure in one embodiment of the present invention.

[0030] Figure 2 FIG. 4 is a schematic plan view of a first wafer in one embodiment of the present invention.

[0031] Figure 3 1 is a plan view of a wafer-level packaging structure in one embodiment of the present invention.

[0032] Figure 4 4 is a cross-sectional schematic diagram of a wafer-level packaging structure in one embodiment of the present invention.

[0033] Figure 5 It is a plan view schematic diagram of a chip structure in one embodiment of the present invention.

[0034] Figure 6 It is a cross-sectional schematic diagram of a chip structure in one embodiment of the present invention. DETAILED DESCRIPTION

[0035] The present invention will be described in detail below in conjunction with the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional changes made by a person skilled in the art based on these embodiments are all within the scope of protection of the present invention.

[0036] It should be noted that the term "comprises" or any other variation thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In addition, the terms "first", "second", "third", "fourth", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0037] The terms "connected", "connected to" or any other variants are intended to cover various relative positions in a connection relationship, so as to include direct connection or indirect connection. Among them, the direct connection can be formed by a gas pipeline, the indirect connection can be a connection relationship established by a device such as a valve body, a sensor, etc., can be a connection relationship established by a gas circuit component such as a brake control unit, or can be a connection relationship established by any other medium such as air.

[0038] See also Figure 1 , a wafer-level packaging method for suction-filling support material provided by an embodiment of the present invention comprises the steps of:

[0039] S1: Provide a wafer-level packaging structure 2000, wherein the wafer-level packaging structure 2000 includes a first wafer 100, a second wafer 200, and a connecting portion 320 bonding the first wafer 100 and the second wafer 200, and a cutting path cavity 330 communicating with the outside is provided between at least some adjacent connecting portions 320.

[0040] The first wafer 100 and the second wafer 200 are both made by semiconductor manufacturing technology, for example, N-type metal oxide semiconductor devices and P-type metal oxide semiconductor devices are formed on a semiconductor substrate by deposition, etching and other processes, and dielectric layers, metal interconnect structures and pads electrically connected to the metal interconnect junctions are formed on the devices. The first wafer 100 and the second wafer 200 can both be made of third-generation semiconductor materials such as silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, gallium nitride or indium gallium; and also include multilayer structures composed of these semiconductors.

[0041] One end of the connecting portion 320 is disposed on the first wafer 100 , and the other end is bonded and connected to the second wafer 200 to achieve the connection between the first wafer 100 and the second wafer 200 ; or one end of the connecting portion 320 is disposed on the second wafer 200 , and the other end is bonded and connected to the first wafer 100 to achieve the connection between the first wafer 100 and the second wafer 200 .

[0042] In a preferred embodiment, the chip structure 1000 includes a bonding layer disposed at the connection between the connecting portion 320 and the second wafer 200 .

[0043] One end of the connection portion 320 is directly formed on the first wafer 100, or one end of the connection portion 320 is formed on the surface of the first wafer 100 through other indirect connection methods; the other end of the connection portion 320 can be bonded to the second wafer 200 by a non-medium bonding method, or can be bonded to the second wafer 200 by a medium bonding method.

[0044] Specifically, combined Figure 2 As shown, one end of the connecting portion 320 is set on the first wafer 100 by etching or deposition, the process is simple, and the connection is stable and firm. The other end of the connecting portion 320 is bonded to the second wafer 200 through a bonding layer, and the cost is low. In this way, the connection between the first wafer 100 and the second wafer 200 is achieved.

[0045] In other embodiments, one end of the connecting portion 320 may also be etched or deposited on the second wafer 200, and the other end of the connecting portion 320 may be bonded to the first wafer 100 via a bonding layer; or, both ends of the connecting portion 320 may be bonded to the first wafer 100 and the second wafer 200 respectively via a bonding layer.

[0046] “Providing a wafer-level packaging structure 2000” further includes:

[0047] S11: providing a first wafer 100 and a second wafer 200, wherein the first wafer 100 is provided with a plurality of chip modules 30, and at least part of the chip modules 30 has a sealing functional area 310 exposed to the first surface 110 of the first wafer.

[0048] The chip module 30 includes at least one chip, and the multiple chips can be chips with the same function; or, the multiple chips include at least two chips with different functions. The chip includes at least one of a logic chip, a memory chip, a central processing unit chip, a microprocessor chip, and an analog-to-digital conversion chip, or the chip includes at least one MEMS chip of a microphone, a pressure sensor, a speed sensor, an acceleration sensor, and a filter, a sensor chip that senses one of a radio frequency signal, an infrared radiation signal, a visible light signal, an acoustic wave signal, and an electromagnetic wave signal, etc.

[0049] The chip module 30 can be only arranged on the first wafer 100, the first wafer 100 is a functional wafer, and the second wafer 200 is a cover wafer; or only arranged on the second wafer 200, the second wafer 200 is a functional wafer, and the first wafer 100 is a cover wafer; or arranged on the first wafer 100 and the second wafer 200 at the same time, the first wafer 100 and the second wafer 200 are both functional wafers and form a cover for each other; in actual applications, it can be adjusted according to packaging requirements.

[0050] In a specific embodiment, combined with Figure 2-3 As shown, the first wafer 100 is provided with the chip module 30 and is a functional wafer, and the second wafer 200 is a cover wafer.

[0051] S12: forming a connection portion 320 surrounding at least a portion of the outer periphery of the sealing functional area 310 on the first surface 110. Specifically, the connection portion 320 is etched or deposited on the first wafer 100.

[0052] The connection part 320 is annular in structure, and the cutting path cavity 330 is formed between adjacent connection parts 320. The cutting path cavity 330 is crisscrossed, and the outer end of the cutting path cavity 330 is connected to the outside. In the prior art, the cutting path cavity 330 is only filled with colloid through the edge area of ​​the outer end, and the degree of filling is not controlled. When the wafer-level packaging structure 2000 is thinned or cut, the support effect of the cutting path cavity 330 is limited.

[0053] S13: Bonding the connection part 320 and the second wafer 200 to form a wafer-level packaging structure. The "bonding the connection part 320 and the second wafer 200" includes the steps of: connecting the connection part 320 and the second wafer 200 by dielectric bonding or dielectric-free bonding, and the wafer-level packaging structure 2000 includes a bonding layer disposed between the connection part 320 and the second wafer 200.

[0054] The connection portion 320 and the second wafer 200 may be bonded by dielectric bonding, including metal dielectric bonding and organic adhesive dielectric bonding. The bonding medium is selected according to the bonding method.

[0055] In a specific implementation, the bonding layer may be a bonding glue, including the steps of: applying the bonding glue at the connection portion 320 ; the bonding glue may be directly applied to the connection portion 320 , or may be applied to the area of ​​the second wafer 200 corresponding to the connection portion 320 .

[0056] One end of the connection part 320 is etched or deposited on the first wafer 100, the process is simple and the connection is stable. The other end of the connection part 320 is connected to the second wafer 200 through a bonding layer, without the need for complex pre-treatment processes, and has low requirements for bonding equipment, saving manufacturing costs.

[0057] The second wafer 200 includes a substrate and a circuit layer 210 disposed on the substrate, and the circuit layer 210 is used to connect to the first wafer 100. The connecting portion 320 connects the first surface 110 and the circuit layer 210.

[0058] As described above, the first wafer 100 and the second wafer 200 are first bonded together. Due to the covering of the second wafer 200 , only the outer end of the dicing path cavity 330 is connected to the outside, rather than being completely exposed to the outside.

[0059] In a preferred embodiment, “sucking the cutting path cavity 330 and filling the cutting path cavity 330 with support material” comprises the following steps:

[0060] S21: placing the wafer-level packaging structure 2000 into a vacuum glue tank; the vacuum glue tank includes a vacuum space, a supporting material located in the vacuum space, and a connecting tube partially disposed on the supporting material, the wafer-level packaging structure 2000 is located in the vacuum space, and the connecting tube is connected to the cutting path cavity 330.

[0061] The support material is a resin-based polymer material, which has fluidity but high viscosity. The fluidity is not very strong, which is convenient for filling and has stickiness. Specifically, it can be: photoresist, epoxy resin glue or UV glue.

[0062] In this way, it is equivalent to that the wafer-level packaging structure 2000 is located in a vacuum space, and one end of the connecting tube is connected to the cutting path cavity 330, and the other end is inserted into the supporting material.

[0063] S22: The vacuum space is pumped to exhaust the gas in the cutting path cavity 330, and then the supporting material is sucked in through the connecting pipe.

[0064] It can be seen that when the vacuum space is sucked, the cutting path cavity 330 is also sucked. Due to the pressure difference, the supporting material will be sucked into the cutting path cavity 330. When the suction is completed and the wafer-level packaging structure 2000 is taken out, the supporting material will solidify in the cutting path cavity 330 to form a filling portion 400.

[0065] In this way, the wafer-level packaging structure 2000 is placed in a vacuum environment as a whole, and the scribe line cavity 330 has a better effect of absorbing the supporting material.

[0066] In a preferred embodiment, the cutting road cavity 330 includes a plurality of transverse cutting roads 331 that penetrate horizontally, and a plurality of longitudinal cutting roads 332 that penetrate longitudinally, wherein the transverse and longitudinal directions are horizontal and perpendicular to each other; a plurality of the transverse cutting roads 331 are arranged along the longitudinal direction, and a plurality of the longitudinal cutting roads 332 are arranged along the transverse direction, and the transverse cutting roads 331 and the longitudinal cutting roads 332 are cross-connected to facilitate the flow of supporting materials.

[0067] The outer ends of the cutting road cavity 330 are connected to the outside, including the two ends of the transverse cutting road 331 are connected to the outside, and the two ends of the longitudinal cutting road 332 are connected to the outside.

[0068] In a preferred embodiment, the connection portion 320 surrounds the sealing functional area 31 to form an annular structure, and the transverse cutting paths 331 and the longitudinal cutting paths 332 are alternately arranged between adjacent annular connection portions 320 and are connected to each other.

[0069] In a preferred embodiment, the scribe line cavity 330 further includes transverse scribe lines and longitudinal scribe lines located at the periphery of the chip module 30 in the edge region.

[0070] It is understandable that when the vacuum space is pumped, since the transverse cutting roads 331 and the longitudinal cutting roads 332 in all areas of the first wafer 100 are connected, the transverse cutting roads 331 and the longitudinal cutting roads 332 in all areas can be gradually filled with supporting materials to form a filling part 400.

[0071] It is understandable that the filling parts 400 formed by solidification are also arranged alternately between adjacent annular connecting parts 320 , and the filling parts 400 are located between at least some adjacent chip modules 30 , which is convenient for subsequent cutting to obtain independent chip structures 1000 .

[0072] In a preferred embodiment, the width of the transverse cutting road 331 and / or the longitudinal cutting road 332 ranges from 40 mm to 200 mm. Theoretically, for the first wafer 100, the second wafer 200 and the chip module 30 of different sizes, the smaller the width of the cutting road cavity 330, the better, so as to reserve more space for the chip module 30. In actual packaging applications, due to the limited process level, the width of the cutting road cavity 330 cannot be made particularly small. Common widths of the cutting road cavity 330 are 80 mm and 120 mm, which ensure the appropriate width of the cutting road cavity 330 without taking up too much space of the first wafer 100.

[0073] In other embodiments, “suctioning the cutting path cavity 330 and filling the cutting path cavity 330 with support material” includes the following steps:

[0074] The first end of the cutting path cavity 330 is vacuumed, and the second end of the cutting path cavity 330 is filled with supporting material, wherein the first end and the second end are two ends of the cutting path cavity 330 connected to the outside. In this way, the process is relatively simple and the vacuum requirement is relatively low.

[0075] Specifically, a vacuum is drawn at the first end of the transverse cutting street 331, and a support material is filled at the second end of the transverse cutting street 331; or a vacuum is drawn at the first end of the longitudinal cutting street 332, and a support material is filled at the second end of the longitudinal cutting street 332. In order to enhance the suction effect, a heating device may be further provided, so that the fluidity of the support material is better and the effect of filling all the cutting street cavities 330 is better.

[0076] In this case, the support material is filled while vacuuming to improve the efficiency of filling the support material and the controllability of the filled support material, so that the cutting path cavities 330 in all areas can be filled with support material and have better support.

[0077] The filling portion 400 formed after curing connects the first wafer 100 and the second wafer 200 along the thickness direction of the wafer-level packaging structure 2000, so that there is no gap between the first wafer 100 and the second wafer 200 at the position originally corresponding to the cutting path cavity 330, and the solid filling portion 400 is formed to support it.

[0078] S3: Cutting the corresponding cutting path cavities 330 to form a plurality of independent chip structures 1000 .

[0079] The cutting path cavity 330 is the position where the first wafer 100 and the second wafer 200 are cut to form the chip structure 1000 after the first wafer 100 and the second wafer 200 are bonded. The cutting path cavity 330 achieves the effect of dividing several chip modules 30 from each other, realizes wafer-level packaging, simplifies the process flow, and improves packaging efficiency.

[0080] When cutting the cutting path cavity 330, since a filling part 400 is formed in all the cutting path cavities 330, it has better support. On the one hand, it can prevent the wafer-level packaging structure 2000 from cracking and breaking during the thinning process and the cutting process; on the other hand, when the wafer-level packaging structure 2000 undergoes a wet process, the existence of the filling part 400 can prevent liquid from flowing into the cutting path cavity, which will cause internal corrosion and affect performance.

[0081] Combination Figure 5-6As shown, the chip structure 1000 includes a first substrate 10, a second substrate 20, a connection layer 32, and a chip module 30 disposed on the first substrate 10. The connection layer 32 connects the first substrate 10 and the second substrate 20, and the connection layer 32 is disposed around the periphery of the sealing functional area 31. The chip structure 1000 also includes a filling structure 40 disposed around the periphery of the connection layer 32, and the filling structure 40 connects the first substrate 10 and the second substrate 20.

[0082] The chip structure 1000 is formed by cutting the entire wafer-level packaging structure 2000, wherein the first layer substrate 10 is formed by cutting the first wafer 100, the second layer substrate 20 is formed by cutting the second wafer 200, the filling structure 40 is formed by cutting the filling part 400, and the connecting layer 32 is formed by cutting the connecting part 320. The structure of the chip module 30 itself will not be affected, and the chip structure 1000 formed by cutting includes at least one chip module 30.

[0083] The outer circumference of the filling structure 40 is located in the same plane as the outer circumferences of the first substrate 10 and the second substrate 20. In other words, the filling structure 40 constitutes part of the outer wall of the chip structure 1000 to protect the internal structure.

[0084] A filling groove 33 is formed on the first surface 301, which is equivalent to a cutting path cavity 330 formed by cutting. The filling structure 40 is filled in the filling groove 33. The connecting layer 32 and the filling structure 40 are ring-shaped. The connecting layer 32 is arranged around the periphery of the sealing functional area 31. The filling structure 40 is further arranged around the periphery of the connecting layer 32. The connecting layer 32 serves to separate the sealing functional area 31 and the filling structure 40.

[0085] The bonding layer is bonded to the connection layer 32 and the second substrate 20 , and is further sealed between the filling groove 33 and the sealing functional area 31 , thereby further preventing the filling structure 40 from entering the sealing functional area 31 and affecting the function of the chip module.

[0086] The beneficial effects of the present invention are: in the wafer-level packaging method of suction filling supporting materials after bonding, the cutting path cavity 330 has a better effect of sucking supporting materials, forming a filling portion 400 with better support; the wafer-level packaging structure is not easy to be broken or damaged during the thinning and cutting process.

[0087] It can be formed by referring to any of the technical solutions provided above, and will not be described in detail here.

[0088] It should be understood that although this specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each implementation mode may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

[0089] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. A wafer-level packaging method for suction-filling support materials, characterized in that: The following steps are involved: A wafer-level packaging structure is provided, the wafer-level packaging structure comprising a first wafer, a second wafer, and a connecting portion bonding the first wafer and the second wafer, wherein at least a portion of adjacent connecting portions has a cutting path cavity communicating with the outside; The cutting path cavity is evacuated and the supporting material is filled into the cutting path cavity.

2. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: The outer end of the cutting path cavity is communicated with the outside.

3. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: "Suctioning the cutting path cavity and filling the cutting path cavity with support material" comprises the steps of: Placing the wafer-level packaging structure into a vacuum adhesive tank; the vacuum adhesive tank comprises a vacuum space, a support material located in the vacuum space, and a connecting pipe partially disposed on the support material, the wafer-level packaging structure is located in the vacuum space, and the connecting pipe is connected to the cutting path cavity; The vacuum space is sucked to draw out the gas in the cutting path cavity, and then the supporting material is sucked in through the connecting pipe.

4. The wafer-level packaging method of claim 1, wherein: "Suctioning the cutting path cavity and filling the cutting path cavity with support material" comprises the steps of: A vacuum is drawn at the first end of the cutting path cavity, and a material is filled at the second end of the cutting path cavity. The first end and the second end are two ends of the cutting path cavity connected to the outside.

5. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: The cutting path cavity includes a plurality of transverse cutting paths penetrating transversely and a plurality of longitudinal cutting paths penetrating longitudinally, wherein the transverse and longitudinal directions are horizontal and perpendicular to each other; a plurality of the transverse cutting paths are arranged longitudinally, a plurality of the longitudinal cutting paths are arranged transversely, and the transverse cutting paths and the longitudinal cutting paths are cross-connected.

6. The wafer-level packaging method of suction-type filling support material according to claim 5, characterized in that: The connecting part is an annular structure, and the transverse cutting paths and the longitudinal cutting paths are alternately arranged between adjacent annular connecting parts.

7. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: The scribe line cavities in all regions of the first wafer are filled with supporting material.

8. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: The method comprises the steps of: cutting the corresponding cutting path cavities to form a plurality of independent chip structures.

9. The wafer-level packaging method of suction-type filling support material according to claim 1, characterized in that: "Providing a wafer level packaging structure" includes the steps of: Providing a first wafer and a second wafer, wherein the first wafer is provided with a plurality of chip modules, and at least some of the chip modules have a sealing functional area exposed to a first surface of the first wafer; forming a connection portion on the first surface surrounding at least a portion of the outer periphery of the sealing functional area; The first wafer and the second wafer are bonded together.

10. The wafer-level packaging method of suction-type filling support material according to claim 9, characterized in that: “Bonding the first wafer and the second wafer” comprises the steps of: The first wafer and the second wafer are connected by dielectric bonding or dielectric-free bonding, and the wafer-level packaging structure includes a bonding layer arranged between the first wafer and the second wafer.

11. A chip structure, using a wafer-level packaging method of the suction-type filling support material according to any one of claims 1 to 10, characterized in that: The chip structure is formed by cutting the scribe line cavity through the wafer-level packaging structure.

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