Substrate processing apparatus and substrate processing method

Abstract

The present disclosure belongs to the technical field of semiconductor manufacturing, and particularly relates to a substrate processing device and a substrate processing method. The substrate processing device comprises a holder, a processing container, a first heater and a control unit. The holder is used for horizontally holding a substrate. The side surface of the substrate and / or the area close to the side surface of the substrate on the back surface of the substrate is detachably and sealingly connected with the holder. The processing container comprises a first cavity used for containing the substrate and a substrate processing liquid. The depth of the first cavity is greater than the thickness of the substrate. The first heater is used for emitting electromagnetic waves from the back surface of the substrate. The wavelength of the electromagnetic waves is configured to be able to pass through the substrate to heat the substrate processing liquid. The control unit is used for controlling the operation of the first heater. The substrate processing liquid is heated by the first heater, so that the part of the substrate processing liquid close to the substrate is vaporized to generate bubbles. The bubble tension offsets the pulling force generated by the surface tension of the substrate processing liquid, thereby reducing the risk of deformation or collapse of the fine pattern in the drying process and improving the product yield.

Description

TECHNICAL FIELD

[0001] The present disclosure belongs to the technical field of semiconductor manufacturing, and particularly relates to a substrate processing device and a substrate processing method. BACKGROUND

[0002] In the manufacturing process of semiconductors and the like, a processing liquid is often supplied to the surface of a substrate such as a wafer or a substrate of a display to clean the surface of the substrate, and then the surface of the substrate is dried.

[0003] After the substrate is cleaned, the processing liquid remains in the pattern gaps on the surface of the substrate, and the surface tension of the processing liquid applies a pulling force to the pattern. During the drying of the surface of the substrate, due to the non-uniform height of the processing liquid remaining in the gaps and the non-uniform drying speed of the surface of the substrate, the pulling force caused by the surface tension of the processing liquid in the gaps on both sides of the pattern is also different, which greatly increases the risk of deformation or collapse of the fine pattern during the drying process, and further causes a significant decrease in product yield. SUMMARY

[0004] The purpose of the present application is to provide a substrate processing device and a substrate processing method to reduce the risk of deformation or collapse of fine patterns during the drying process and improve product yield.

[0005] To achieve the above purpose, the present application provides a substrate processing device, comprising:

[0006] a holder for horizontally holding a substrate, the holder being detachably and sealingly connected to the side surface of the substrate and / or the area close to the side surface of the substrate on the back surface of the substrate;

[0007] a processing container comprising a first cavity for containing the substrate and a substrate processing liquid above the substrate, the depth of the first cavity being greater than the thickness of the substrate;

[0008] a first heater for emitting electromagnetic waves from the back surface of the substrate to the substrate processing liquid, the wavelength of the electromagnetic waves being configured to be able to pass through the substrate to heat the substrate processing liquid;

[0009] a control unit for controlling the operation of the first heater.

[0010] Optionally, the wavelength of the electromagnetic waves emitted by the first heater is 1-1000 μm.

[0011] Optionally, the first heater can pulse heat.

[0012] Optionally, the substrate processing apparatus further includes a liquid temperature control unit, which includes a second heater and a first temperature sensor. The first temperature sensor is used to detect the temperature of the substrate processing liquid, and the second heater is used to heat the substrate processing liquid.

[0013] Optionally, the liquid temperature control unit is configured as follows:

[0014] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the second heater heats the substrate processing liquid, where the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid.

[0015] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater stops heating the substrate processing liquid.

[0016] Optionally, both the second heater and the first temperature sensor are connected to the control unit, which is configured to:

[0017] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the control unit controls the second heater to heat the substrate processing liquid. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid.

[0018] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the control unit controls the second heater to stop heating the substrate processing liquid.

[0019] Optionally, the control unit for controlling the operation of the first heater includes:

[0020] The control unit confirms that the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, and the control unit controls the first heater to heat the substrate processing liquid.

[0021] Optionally, the substrate processing apparatus further includes a liquid level sensor, which is used to detect the liquid level position of the substrate processing liquid in the first cavity. The liquid level sensor, the second heater, and the first temperature sensor are all connected to the control unit. The control unit is configured to: confirm that the liquid level sensor detects that the liquid level position of the substrate processing liquid has reached a second preset value, and start executing the heating step. The second preset value is equal to or higher than the front side of the substrate.

[0022] The heating step includes:

[0023] When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the second heater is controlled to heat the substrate processing liquid. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid.

[0024] When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid, and the first heater is controlled to heat the substrate processing liquid.

[0025] Optionally, the liquid level sensor detects that the liquid level of the substrate processing liquid has reached a second preset value, including:

[0026] The liquid level sensor detects that the liquid level of the substrate processing liquid has dropped to the second preset value.

[0027] Optionally, the substrate processing apparatus further includes a liquid input section and a liquid discharge section, wherein the liquid input section is used to introduce the substrate processing liquid into the first cavity, and the liquid discharge section is used to discharge the substrate processing liquid from the first cavity.

[0028] Optionally, the substrate processing apparatus further includes a liquid level sensor for detecting the liquid level position of the substrate processing liquid in the first cavity.

[0029] Optionally, the liquid discharge section is configured as follows:

[0030] When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is higher than a second preset value, the liquid discharge section is opened to discharge the liquid. The second preset value is equal to or higher than the front side of the substrate.

[0031] When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to or lower than the second preset value, the liquid discharge section is closed.

[0032] Optionally, both the liquid level sensor and the liquid discharge section are connected to the control unit, and the control unit is configured to:

[0033] When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is higher than a second preset value, the control unit controls the liquid discharge unit to start discharging liquid, and the second preset value is equal to or higher than the front side of the substrate.

[0034] When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to or lower than the second preset value, the control unit controls the liquid discharge unit to stop discharging liquid.

[0035] Optionally, the liquid level sensor, the liquid input section, and the liquid discharge section are all connected to the control unit, and the control unit is configured as follows:

[0036] The liquid input section is controlled to open, so as to input the substrate processing liquid into the first cavity;

[0037] After the liquid level sensor detects that the liquid level of the substrate processing liquid is higher than a second preset value, the liquid input section is controlled to close and the liquid discharge section is controlled to open to discharge the liquid. The second preset value is equal to or higher than the front side of the substrate.

[0038] When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to the second preset value, the liquid discharge section is closed, and the second preset value is equal to or higher than the front side of the substrate.

[0039] Optionally, the substrate processing apparatus further includes a gas supply unit, which includes a gas input component and a gas output component. The gas input component is used to introduce gas into the first cavity, and the gas output component is used to discharge gas from the first cavity.

[0040] Optionally, the gas supply unit further includes a pressure sensor for detecting the pressure inside the first cavity, and the gas supply unit is configured to:

[0041] When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the gas input component increases the air intake flow rate and / or the gas output component decreases the exhaust flow rate.

[0042] When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the gas input component reduces the intake flow rate and / or the gas output component increases the exhaust flow rate.

[0043] Optionally, the gas supply unit further includes a pressure sensor for detecting the pressure inside the first cavity. The pressure sensor, the gas input component, and the gas output component are all connected to the control unit. The gas supply unit is configured as follows:

[0044] When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the control unit controls the gas input component to increase the air intake flow rate and / or the control unit controls the gas output component to decrease the exhaust flow rate;

[0045] When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component to reduce the air intake flow rate and / or the control unit controls the gas output component to increase the exhaust flow rate.

[0046] Optionally, the gas supply unit includes a second temperature sensor and a third heater. The second temperature sensor is used to detect the gas temperature in the first cavity, and the third heater is used to heat the gas introduced into the first cavity by the gas input component before the gas enters the first cavity.

[0047] Optionally, the gas supply unit is configured as follows:

[0048] When the gas temperature in the first cavity measured by the second temperature sensor is lower than the fourth preset value, the third heater heats the gas introduced into the first cavity by the gas input component. The fourth preset value is less than the first preset value, and the first preset value is lower than the boiling point of the substrate processing liquid by 1°C to 10°C.

[0049] When the gas temperature in the first cavity, as measured by the second temperature sensor, is equal to or higher than the fourth preset value, the third heater stops heating or reduces its heating power.

[0050] Optionally, both the second temperature sensor and the third heater are connected to the control unit, which is configured to:

[0051] When the gas temperature in the first cavity measured by the second temperature sensor is lower than the fourth preset value, the control unit controls the third heater to heat the gas introduced into the first cavity by the gas input component. The fourth preset value is less than the first preset value, and the first preset value is lower than the boiling point of the substrate processing liquid by 1°C to 10°C.

[0052] When the gas temperature in the first cavity, as measured by the second temperature sensor, is equal to or higher than the fourth preset value, the control unit controls the third heater to stop heating or reduce the heating power.

[0053] Optionally, the substrate processing apparatus further includes a vibrator capable of applying vibration to the substrate processing liquid, the vibration frequency of the vibrator being 10kHz to 3MHz.

[0054] This application also provides a substrate processing method, including:

[0055] Hold the substrate horizontally;

[0056] A substrate processing liquid with a temperature equal to a first preset value is provided to the front side of the substrate, wherein the liquid level of the substrate processing liquid is not lower than the front side of the substrate, and the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid.

[0057] The substrate processing liquid is heated by electromagnetic waves passing through the back of the substrate until the portion of the substrate processing liquid near the substrate vaporizes and generates bubbles.

[0058] Optionally, the step of providing the substrate processing liquid with a temperature equal to a first preset value to the front side of the substrate includes:

[0059] The substrate processing liquid with a temperature lower than the first preset value is provided to the front side of the substrate until the liquid level of the substrate processing liquid is not lower than the front side of the substrate.

[0060] The substrate processing solution is heated until its temperature equals the first preset value.

[0061] Optionally, the wavelength of the electromagnetic wave is 1μm to 1000μm.

[0062] Optionally, the electromagnetic wave is a pulsed electromagnetic wave.

[0063] Optionally, during the process of heating the substrate processing liquid from the back of the substrate using electromagnetic waves, ultrasonic vibrations are applied to the substrate processing liquid to cause the bubbles to rise.

[0064] Optionally, during the process of heating the substrate processing liquid from the back of the substrate using electromagnetic waves, gas is supplied to the surface of the substrate processing liquid.

[0065] Optionally, the temperature of the gas supplied to the surface of the substrate processing liquid is equal to a fourth preset value, wherein the fourth preset value is less than or equal to the first preset value.

[0066] Optionally, the substrate processing method further includes:

[0067] The air pressure at the surface of the substrate processing liquid is controlled so that the size and generation speed of the bubbles are within a preset parameter range.

[0068] The substrate processing apparatus and substrate processing method disclosed in this application have the following beneficial effects:

[0069] In this application, the substrate processing apparatus includes a holder, a processing container, a first heater, and a control unit. The holder is used to hold the substrate horizontally. The processing container includes a first cavity for containing the substrate and a substrate processing liquid. The depth of the first cavity is greater than the thickness of the substrate. The first heater is used to emit electromagnetic waves from the back side of the substrate towards the substrate processing liquid. The wavelength of the electromagnetic waves is configured to penetrate the substrate and heat the substrate processing liquid. The control unit is used to control the operation of the first heater. By controlling the operation of the first heater to heat the substrate processing liquid, the portion of the substrate processing liquid near the substrate vaporizes to generate bubbles. The bubble tension counteracts the pulling force generated by the surface tension of the substrate processing liquid, reducing the risk of deformation or collapse of fine patterns during the drying process and improving product yield.

[0070] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0071] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0072] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0073] Figure 1 This is a schematic diagram of the substrate processing apparatus in an embodiment of this application.

[0074] Figure 2 This is a schematic diagram of the substrate drying process in the prior art.

[0075] Figure 3 This is a schematic diagram of the substrate drying process in an embodiment of this application.

[0076] Figure 4 This is a schematic diagram of the pattern under stress during the substrate drying process in an embodiment of this application.

[0077] Figure 5 This is a schematic diagram of the irradiance change of the first heater in the embodiments of this application.

[0078] Figure 6 This is a schematic flowchart of the substrate processing method in the embodiments of this application.

[0079] Explanation of reference numerals in the attached figures:

[0080] 10. Substrate processing apparatus;

[0081] 100, Holder; 110, Connecting plate; 120, Chuck; 200, Processing container; 201, First chamber; 202, Second chamber; 210, Support; 300, First heater; 310, Heating unit; 400, Liquid temperature control unit; 510, Liquid input unit; 520, Liquid discharge unit; 610, Gas input assembly; 620, Gas output assembly; 700, Vibrator.

[0082] 20. Substrate; 31. Pattern; 32. Pattern gap; 40. Substrate treatment solution. Detailed Implementation

[0083] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0084] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0085] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present application, and should not be construed as limiting the present application.

[0086] See Figure 1 As shown, in this embodiment, the substrate processing apparatus 10 includes a holder 100, a processing container 200, a first heater 300, and a control unit (not shown). The holder 100 is used to hold the substrate 20 horizontally or nearly horizontally. The substrate 20 includes, for example, a wafer for fabricating integrated circuits and a substrate for fabricating a display panel, etc., which are not specifically limited in this application.

[0087] The processing container 200 includes a first cavity 201 for containing the substrate 20 and the substrate processing liquid 40. The substrate processing liquid 40 may be a volatile cleaning liquid. For example, the substrate processing liquid 40 includes deionized water, isopropanol, and ethanol, but is not limited to these, depending on the specific circumstances. The holder 100 may be disposed in the inner cavity of the processing container 200, and the first cavity 201 may be the inner cavity of the processing container 200 or a portion of the inner cavity of the processing container 200. The first cavity 201 contains the substrate 20 and the substrate processing liquid 40 on the substrate 20. Specifically, the first cavity 201 includes the portion of the inner cavity of the processing container 200 located above the lowest contact position between the holder 100 and the substrate 20, and the portion of the inner cavity of the processing container 200 located below the lowest contact position between the holder 100 and the substrate 20 is the second cavity 202 of the processing container 200. However, it is not limited to this; the portion of the inner cavity of the processing container 200 located below the holder 100 may also be the second cavity 202 of the processing container 200.

[0088] The retainer 100 is detachably and sealingly connected to the side and / or back of the substrate 20 near the side of the substrate 20 to prevent the substrate processing liquid 40 from flowing below the substrate 20, ensuring that there is no substrate processing liquid 40 below the substrate 20 during the substrate 20 processing. The depth of the first cavity 201 is greater than the thickness of the substrate 20, ensuring that when the substrate processing liquid 40 is supplied to the front of the substrate 20, the liquid level of the substrate processing liquid 40 can be higher than the front of the substrate 20.

[0089] A first heater 300 may be disposed on the back side of the substrate 20 held by the holder 100. For example, the first heater 300 may be disposed in the second cavity 202. The first heater 300 is used to emit electromagnetic waves from the back side of the substrate 20 to the substrate processing liquid 40. The wavelength of the electromagnetic waves is configured to penetrate the substrate 20 and heat the substrate processing liquid 40. A control unit is used to control the operation of the first heater 300. It is understood that the control unit's control of the first heater 300 includes at least controlling the switching of the first heater 300, thereby heating and vaporizing the portion of the substrate processing liquid 40 near the substrate 20 to generate bubbles. Optionally, the control unit can control the irradiance of the first heater 300, thereby controlling the bubble size and bubble generation rate, to achieve the purpose of offsetting the surface tension of the substrate processing liquid 40 by bubble tension.

[0090] It should be noted that the first heater 300 may be disposed on the back side of the substrate 20 held by the holder 100, but is not limited thereto. The first heater 300 may also be movably mounted on the processing container 200. The first heater 300 may be moved to the front, back, or side of the substrate 20, depending on the specific circumstances. The processing container 200 may also include a sealing door (not shown). Opening the sealing door allows the unprocessed substrate 20 to be moved into the first cavity 201. The sealing door is closed during substrate 20 processing. After processing is completed, opening the sealing door allows the substrate 20 to be moved out of the first cavity 201.

[0091] It should also be noted that the wavelength of the electromagnetic wave is configured to penetrate the substrate 20 and heat the substrate processing liquid 40, including that the absorption rate of the electromagnetic wave by the substrate processing liquid 40 is higher than that of the substrate 20, for example, 40%, 50%, 60%, 70%, 80%, 85%, 90%, 95%, etc., depending on the specific situation. The substrate 20 dried using the substrate processing apparatus 10 may include a pattern 31 located on the front side of the substrate 20, such as... Figure 2 As shown, however, this application does not specifically limit the substrate 20 to be dried; the front side of the substrate 20 may also be unpatterned, depending on the specific circumstances. For example... Figure 2 As shown, after cleaning the substrate 20, substrate treatment liquid 40 remains in the pattern gaps 32 on the surface of the substrate 20. The surface tension of the substrate treatment liquid 40 exerts a pulling force on the pattern 31. During the drying process of the substrate 20 surface, due to the uneven height of the residual substrate treatment liquid 40 in the pattern gaps 32 and the uneven drying speed of the substrate 20 surface, the pulling force generated by the surface tension of the substrate treatment liquid 40 in the pattern gaps 32 on both sides of the pattern 31 is also different. This greatly increases the risk of deformation or collapse of the fine pattern 31 during the drying process, resulting in a significant decrease in product yield.

[0092] In this embodiment, the substrate processing apparatus 10 includes a holder 100, a processing container 200, a first heater 300, and a control unit. The holder 100 is used to horizontally hold the substrate 20. The processing container 200 includes a first cavity 201 for containing the substrate 20 and a substrate processing liquid 40. The depth of the first cavity 201 is greater than the thickness of the substrate 20. The first heater 300 is used to emit electromagnetic waves from the back side of the substrate 20 to the substrate processing liquid 40. The wavelength of the electromagnetic waves is configured to penetrate the substrate 20 and heat the substrate processing liquid 40. The control unit is used to control the operation of the first heater 300. At least the control unit can control the switching on and off of the first heater 300, thereby enabling the portion of the substrate processing liquid 40 near the substrate 20 to be heated and vaporized to generate bubbles. The control unit can also be configured to control the irradiance of the first heater 300, thereby controlling the size and generation speed of the bubbles. By heating the substrate processing liquid 40 with the first heater 300, the portion of the substrate processing liquid 40 near the substrate 20 is vaporized to generate bubbles. The bubble tension counteracts the pulling force generated by the surface tension of the substrate processing liquid 40.Figure 3 and Figure 4 As shown, this reduces the risk of deformation or collapse of the fine pattern 31 during the drying process and improves product yield.

[0093] In some embodiments, the wavelength of the electromagnetic wave emitted by the first heater 300 is 1 μm to 1000 μm.

[0094] When substrate 20 is used to fabricate integrated circuit wafers, the material of substrate 20 is usually silicon. The substrate treatment liquid 40 used in the cleaning step before drying substrate 20, that is, the substrate treatment liquid 40 that needs to be evaporated in the drying step, is usually deionized water, isopropanol, ethanol, etc. Electromagnetic waves with wavelengths of 1μm to 1000μm are not absorbed by silicon. Therefore, the electromagnetic waves emitted by the first heater 300 can pass through the silicon substrate 20. The wavelength range with higher absorption rate can be selected for different substrate treatment liquids 40, thereby realizing direct heating of substrate treatment liquids 40 such as deionized water, isopropanol, ethanol, etc.

[0095] It should be understood that the wavelength of the electromagnetic wave emitted by the first heater 300 is not limited to 1μm to 1000μm, and can be specifically set according to the material of the substrate 20 and the substrate processing liquid 40 used. For example, the wavelength of the electromagnetic wave emitted by the first heater 300 can be controlled and adjusted by the control unit, so that the substrate processing apparatus 10 can process the substrate 20 with different materials and different components of the substrate processing liquid 40.

[0096] In some embodiments, the first heater 300 is a pulse heater, capable of pulse heating of the substrate processing liquid 40. For example, the first heater 300 alternately heats the substrate processing liquid 40 with a first irradiance I1 or a second irradiance I2. Figure 4 As shown. The control unit can control the magnitude of the first irradiance I1 and the second irradiance I2, the length of the period T, and the ratio of the first irradiance I1 and the second irradiance I2 within one period T. The first irradiance I1 is greater than or equal to 0, the second irradiance I2 is greater than 0, and the length of the period T is 1 μs to 10 s.

[0097] The control unit controls the operation of the first heater 300 by controlling at least one of the magnitude of the first irradiance I1 and the second irradiance I2, the length of the period T, and the ratio of the first irradiance I1 and the second irradiance I2 within one period T, thereby controlling the overall irradiance of the first heater 300, which in turn controls the size and generation rate of the bubbles.

[0098] It should be noted that the first heater 300 alternately heats the substrate processing liquid 40 with a first irradiance I1 or a second irradiance I2. The waveform of the irradiance changing with time is a square wave, but it is not limited to this. The waveform of the irradiance changing with time can also be a sine wave or other waveforms, and the irradiance changing with time can also be a monotonic curve, depending on the specific situation. Optionally, the heating rate of the substrate processing liquid 40 can be adjusted by adjusting the irradiance of the first heater 300, but it is not limited to this. Various methods can be used for adjustment, such as adjusting the wavelength of the electromagnetic waves emitted by the first heater 300.

[0099] It should also be noted that the first heater 300 emits electromagnetic waves with alternating first irradiance I1 and second irradiance I2 to achieve pulse heating, but it is not limited to this. Pulse heating can also be achieved by shielding or exposing the heater, depending on the specific situation. In achieving pulse heating by shielding or exposing the heater, a shutter can be provided between the first heater 300 and the holder 100. When the shutter is closed, the first heater 300 can be shielded or partially shielded; when the shutter is open, the first heater 300 can be exposed.

[0100] In some embodiments, the first heater 300 includes a plurality of heating units 310, different heating units 310 are used to heat the substrate processing liquid 40 above different areas of the substrate 20, and the control unit controls the irradiance of different heating units 310 to be the same or different.

[0101] The film thickness, pattern density, and morphology of different regions on the substrate 20 may vary. The substrate 20 may also be warped, resulting in differences in the amount of substrate processing liquid 40 above different regions of the substrate 20. The energy required to heat the substrate processing liquid 40 in different regions will vary accordingly. When the control unit can control the irradiance of different heating units 310 to be the same or different, the irradiance of the corresponding heating unit 310 can be adjusted according to the film thickness, pattern density, morphology, and degree of warping of different regions on the substrate 20, so that the evaporation rate of the substrate processing liquid 40 is adapted to the film thickness, pattern density, morphology, and degree of warping of different regions on the substrate 20, thereby preventing the pattern 31 from collapsing.

[0102] The wavelength of the electromagnetic waves emitted by the first heater 300, the waveform of the electromagnetic wave irradiance, and the overall irradiance can be adjusted by the control unit. However, this is not the only adjustment possible; the parameters can also be adjusted by replacing the first heater 300, depending on the specific circumstances. Furthermore, by replacing the first heater 300, the adjustment range of the wavelength of the electromagnetic waves emitted by the heating substrate processing liquid 40 and the waveform of the irradiance can be increased or decreased. When the first heater 300 includes multiple heating units 310, the wavelength of the electromagnetic waves emitted by different heating units 310, the waveform of the electromagnetic wave irradiance, and the overall irradiance can be adjusted either by the control unit or by replacing the heating units 310.

[0103] See Figure 1 As shown, the substrate processing apparatus 10 also includes a liquid temperature control unit 400, which includes a second heater and a first temperature sensor. The first temperature sensor is used to detect the temperature of the substrate processing liquid 40, and the second heater is used to heat the substrate processing liquid 40.

[0104] When drying the substrate 20 using the substrate processing apparatus 10, the substrate 20 is first moved into the first cavity 201 and placed horizontally on the holder 100. Then, a substrate processing liquid 40 is provided to the front side of the substrate 20. The temperature of the substrate processing liquid 40 is equal to a first preset value, which is 1°C to 10°C lower than the boiling point of the substrate processing liquid 40. The liquid surface position of the substrate processing liquid 40 is a second preset value, which is equal to or higher than the front side of the substrate 20. Then, electromagnetic waves are emitted from the back side of the substrate 20 through the first heater 300 to pass through the substrate 20 and heat the part of the substrate processing liquid 40 near the substrate 20, causing the part of the substrate processing liquid 40 near the substrate 20 to vaporize and generate bubbles. As the bubbles are continuously generated and rise, the substrate processing liquid 40 on the front side of the substrate 20 is continuously evaporated until the surface of the substrate 20 is dry. During the drying process, the temperature of the substrate processing liquid 40 is maintained at no lower than the first preset value. When drying the substrate 20 using the substrate processing apparatus 10, the first preset value is set to be 1°C to 10°C lower than the boiling point of the substrate processing liquid 40. This shortens the drying time and reduces the difficulty of controlling the bubble generation rate and size, thereby reducing the difficulty of controlling the radiation irradiance of the first heater 300 and reducing the risk of pattern 31 collapsing.

[0105] When providing substrate processing liquid 40 to the front side of substrate 20, substrate processing liquid 40 with a temperature lower than a first preset value can be provided to the front side of substrate 20 first. Before heating substrate processing liquid 40 by emitting electromagnetic waves through first heater 300, first temperature sensor detects the temperature of substrate processing liquid 40. If the temperature of substrate processing liquid 40 is lower than the first preset value, then substrate processing liquid 40 in first cavity 201 is heated by second heater. During the heating process of second heater, first temperature sensor detects the temperature of substrate processing liquid 40. When the temperature of substrate processing liquid 40 equals the first preset value, second heater stops heating. Thus, substrate processing apparatus 10 also includes liquid temperature control unit 400, which can reduce the temperature requirement for inputting substrate processing liquid 40 into first cavity 201 and can reliably provide substrate processing liquid 40 with a temperature of the first preset value.

[0106] Optionally, during the process of heating the substrate processing liquid 40 by emitting electromagnetic waves from the first heater 300, the first temperature sensor also detects the temperature of the substrate processing liquid 40. When the temperature of the substrate processing liquid 40 is lower than the first preset value, the second heater heats the substrate processing liquid 40 until the temperature of the substrate processing liquid 40 is equal to the first preset value, at which point the second heater stops heating. Thus, the substrate processing apparatus 10 also includes a liquid temperature control unit 400, which can maintain the temperature of the substrate processing liquid 40 at or above the first preset value during the drying process.

[0107] The second heater can be a contact heater, disposed on the side wall of the processing container 200 surrounding the holder 100. At least a portion of the second heater is located within the first cavity 201, and the substrate processing liquid 40 can contact the portion of the second heater located within the first cavity 201. The second heater generates heat to heat the substrate processing liquid 40. Alternatively, the second heater can be disposed on the top of the processing container 200 opposite the front surface of the substrate 20, emitting electromagnetic waves to heat the substrate processing liquid 40. Furthermore, the second heater can be movably mounted on the processing container 200, capable of moving to the front, back, or side of the substrate 20, or the second heater can be a movably mounted first heater 300.

[0108] In some embodiments, the liquid temperature control unit 400 is configured to:

[0109] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is lower than the first preset value, the second heater heats the substrate processing liquid 40.

[0110] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is equal to or higher than the first preset value, the second heater stops heating the substrate processing liquid 40.

[0111] The liquid temperature control unit 400 can independently control the temperature of the substrate processing liquid 40. Before the first heater 300 operates, it maintains the temperature of the substrate processing liquid 40 (at a first preset value) close to its boiling point. This allows the area of ​​the substrate processing liquid 40 near the substrate 20 to more easily vaporize and generate bubbles under the heating of the first heater 300, while also preventing the second heater from directly heating the substrate processing liquid 40 to boiling, which would increase the risk of deformation or collapse of the fine pattern 31 during the drying process. The liquid temperature control unit 400 can also independently maintain the temperature of the substrate processing liquid 40 at or above the first preset value during the drying process.

[0112] In some embodiments, both the second heater and the first temperature sensor are connected to the control unit, which is configured to:

[0113] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is lower than the first preset value, the control unit controls the second heater to heat the substrate processing liquid 40.

[0114] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is equal to or higher than the first preset value, the control unit controls the second heater to stop heating the substrate processing liquid 40.

[0115] The temperature of the substrate processing liquid 40 is controlled by connecting the second heater and the first temperature sensor of the liquid temperature control unit 400 via the control unit. Compared with the solution of independent temperature control by the liquid temperature control unit 400, the structure of the liquid temperature control unit 400 can be simplified, the manufacturing cost of the substrate processing apparatus 10 can be reduced, and centralized control of different components in the substrate processing apparatus 10 can be achieved.

[0116] In some embodiments, the control unit for controlling the operation of the first heater 300 includes:

[0117] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is equal to or higher than the first preset value, the control unit controls the first heater 300 to heat the substrate processing liquid 40.

[0118] Therefore, the control unit of the substrate processing apparatus 10 can automatically turn on the first heater 300 to reheat the area of ​​the substrate processing liquid 40 near the substrate 20 after the second heater heats the substrate processing liquid 40 to near the boiling point.

[0119] When drying substrate 20 using substrate processing apparatus 10, it is preferable to first provide substrate processing liquid 40 with a temperature lower than a first preset value to the front side of substrate 20. The substrate processing liquid 40 in the first cavity 201 is heated by a second heater. During the heating process of the second heater, the temperature of substrate processing liquid 40 is detected by a first temperature sensor. When the temperature of substrate processing liquid 40 is equal to the first preset value, the second heater stops heating, and the first heater 300 starts heating the area of ​​substrate processing liquid 40 near substrate 20. During the heating process of the first heater 300, the temperature of substrate processing liquid 40 rises and exceeds the first preset value. The first heater 300 continues to heat substrate processing liquid 40 until substrate processing liquid 40 is completely evaporated, and substrate 20 is dried.

[0120] In some embodiments, the substrate processing apparatus 10 further includes a liquid level sensor (not shown), which is used to detect the liquid level position of the substrate processing liquid 40 in the first cavity 201. The liquid level sensor, the second heater, and the first temperature sensor are all connected to the control unit. The control unit is configured to: confirm that the liquid level sensor detects that the liquid level position of the substrate processing liquid 40 has reached a second preset value and start executing the heating step. The second preset value is equal to or higher than the front side of the substrate 20.

[0121] The heating process includes:

[0122] When the first temperature sensor detects that the temperature of the substrate processing liquid 40 is lower than the first preset value, the second heater is controlled to heat the substrate processing liquid 40.

[0123] When the temperature of the substrate processing liquid 40 detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid 40, and the first heater 300 is controlled to heat the substrate processing liquid 40.

[0124] Therefore, the substrate processing apparatus 10 includes a control unit that can automatically turn on the second heater to heat the substrate processing liquid 40 to near the boiling point (first preset temperature) after the liquid level reaches the second preset value, and then automatically turn on the first heater 300 to heat the area of ​​the substrate processing liquid 40 near the substrate 20.

[0125] In some embodiments, the liquid level sensor detecting that the liquid level has reached a second preset value includes detecting that the liquid level has dropped to the second preset value. Therefore, when drying the substrate 20 using the substrate processing apparatus 10, the process of introducing the substrate processing liquid 40 into the first cavity 201 may include the following steps: introducing the substrate processing liquid 40 until the liquid level is above the second preset value, discharging a portion of the substrate processing liquid 40 until the liquid level is equal to the second preset value, i.e., the liquid level sensor can detect that the liquid level has dropped to the second preset value, and then starting the heating step. This improves the accuracy of liquid level control before the heating step begins and enhances the stability of the heating and drying step of the substrate processing liquid 40.

[0126] It should be noted that the second heater can reheat the substrate processing liquid 40 when the liquid level drops to the second preset value, but it is not limited to this. The second heater can also heat the substrate processing liquid 40 when the liquid level rises to the second preset value and maintain the temperature of the substrate processing liquid 40 at or below the first preset value. When the liquid level drops to the second preset value, it can continue to heat the substrate processing liquid 40 until its temperature equals the first preset value or maintain its temperature at the first preset value, depending on the specific circumstances. Heating the substrate processing liquid 40 when the liquid level rises to the second preset value can shorten the heating time and improve the processing efficiency of the substrate 20.

[0127] See Figure 1 As shown, the substrate processing apparatus 10 also includes a liquid input section 510 and a liquid discharge section 520. The liquid input section 510 is used to introduce substrate processing liquid 40 into the first cavity 201, and the liquid discharge section 520 is used to discharge a portion of the substrate processing liquid 40 from the first cavity 201. The liquid input section 510 may include a liquid spraying device, which may be disposed on the top of the processing container 200 directly opposite the center of the substrate 20.

[0128] The substrate processing liquid 40 is sprayed onto the surface of the substrate 20, so that the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front side of the substrate 20. Then, the substrate processing liquid 40 is heated by the first heater 300 to vaporize the substrate processing liquid 40.

[0129] It is understood that spraying the substrate processing liquid 40 onto the surface of the substrate 20 can be a step in the cleaning process of the substrate 20 or a step in the drying process of the substrate 20. That is, in some embodiments, the substrate processing apparatus 10 can be used to clean and dry the substrate 20, and the cleaning liquid provided during the last cleaning of the substrate 20 is the substrate processing liquid 40; in some embodiments, the substrate processing apparatus 10 can be used to clean and dry the substrate 20, and after cleaning, the substrate 20 is dried, which includes providing the substrate processing liquid 40 until the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front surface of the substrate 20, and then heating the substrate processing liquid 40 to vaporize the substrate processing liquid 40; in some embodiments, the substrate processing apparatus 10 can be used to dry the substrate, after cleaning, the substrate 20 is transferred to the substrate processing apparatus 10 for drying, and drying the substrate 20 includes providing the substrate processing liquid 40 until the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front surface of the substrate 20, and then heating the substrate processing liquid 40 to vaporize the substrate processing liquid 40, but it is not limited to this, and the specific method may vary depending on the situation.

[0130] It should be noted that the liquid input section 510 may be provided on the top of the processing container 200, and the substrate processing liquid 40 may be sprayed on the surface of the substrate 20. However, it is not limited to this. The liquid input section 510 may also include a channel structure located on the side wall of the processing container to allow the substrate processing liquid 40 to be introduced from the side wall of the processing container 200. The specific implementation may vary depending on the circumstances.

[0131] When using the substrate processing apparatus 10, the substrate 20 is first moved into the first chamber 201 and placed horizontally on the holder 100, and then the substrate processing liquid 40 is introduced through the liquid input section 510. Optionally, after an excess of substrate processing liquid 40 is introduced through the liquid input section 510, a portion of the substrate processing liquid 40 in the first chamber 201 is discharged through the liquid discharge section 520, so that the liquid level of the substrate processing liquid 40 before drying is equal to or slightly higher than the front side of the substrate 20, and the temperature of the substrate processing liquid 40 is equal to a first preset value, the substrate processing liquid 40 is heated by the first heater 300 until it evaporates.

[0132] In some embodiments, the substrate processing apparatus 10 further includes a liquid level sensor for detecting the liquid level position of the substrate processing liquid 40 within the first chamber 201. By using the liquid level sensor to detect the liquid level position of the substrate processing liquid 40 within the first chamber 201, the liquid level of the substrate processing liquid 40 before drying is made equal to or slightly higher than the front surface of the substrate 20, thus controlling the liquid level position of the substrate processing liquid 40 more accurately. Therefore, the opening and closing of the liquid inlet 510 and the liquid outlet 520 can be controlled based on the liquid level position detected by the liquid level sensor, thereby achieving accurate control of the liquid level position.

[0133] In some embodiments, the liquid discharge section 520 is configured as follows:

[0134] When the liquid level of the substrate processing liquid 40 in the first cavity 201 detected by the liquid level height sensor is higher than the second preset value, the liquid discharge section 520 is opened to discharge the liquid.

[0135] When the liquid level of the substrate processing liquid 40 in the first cavity 201 detected by the liquid level height sensor is equal to or lower than the second preset value, the liquid discharge section 520 is closed.

[0136] The liquid discharge section 520 can independently control the liquid level. Before the first heater 300 is working, the liquid level of the substrate processing liquid 40 is equal to or slightly higher than the front side of the substrate 20, that is, the liquid level is equal to the second preset value. This prevents the liquid level of the substrate processing liquid 40 from being too low, which would cause the surface tension of the substrate processing liquid 40 on the substrate 20 to deform or collapse the fine pattern 31. It also prevents the liquid level of the substrate processing liquid 40 from being too high, which would reduce the drying efficiency of the substrate 20.

[0137] In some embodiments, both the liquid level sensor and the liquid discharge unit 520 are connected to the control unit, which is configured to:

[0138] When the liquid level of the substrate processing liquid 40 in the first cavity 201 detected by the liquid level height sensor is higher than the second preset value, the control unit controls the liquid discharge unit 520 to start the discharge.

[0139] When the liquid level of the substrate processing liquid 40 in the first cavity 201 detected by the liquid level height sensor is equal to or lower than a second preset value, the control unit controls the liquid discharge unit 520 to stop discharging liquid.

[0140] By connecting the liquid level sensor and the liquid discharge unit 520 through the control unit, the liquid level position of the substrate processing liquid 40 can be controlled. Compared with the solution of independently controlling the liquid level position through the liquid discharge unit 520, the structure of the liquid discharge unit 520 can be simplified, the manufacturing cost of the substrate processing apparatus 10 can be reduced, and centralized control of different components in the substrate processing apparatus 10 can be achieved.

[0141] Optionally, the liquid input unit 510 is also connected to the control unit, which can control the opening and closing of the liquid input unit 510, thereby controlling the liquid input unit 510 to input the substrate processing liquid 40 into the first cavity 201. Further, the control unit is configured as follows:

[0142] The control unit controls the liquid input unit 510 to open, so as to input the substrate processing liquid 40 into the first cavity 201;

[0143] After the liquid level sensor detects that the liquid level of the substrate processing liquid 40 is higher than the second preset value, the liquid input unit 510 is closed and the liquid discharge unit 520 is opened to discharge the liquid.

[0144] When the liquid level of the substrate processing liquid 40 in the first cavity detected by the liquid level height sensor is equal to the second preset value, the liquid discharge section 520 is closed.

[0145] Therefore, the substrate processing apparatus 10 can automatically input the substrate processing liquid 40 and control the liquid level position, improving the accuracy of liquid level control when the second heater heats the substrate processing liquid 40 and improving the stability of the first heater 300 heating and drying the substrate processing liquid 40. It can be understood that inputting the substrate processing liquid 40 and controlling the liquid level position are preset to the second heater's operation. When the second heater heats the substrate processing liquid 40 to the first preset value, the first heater 300 starts operating.

[0146] See Figure 1 As shown, the substrate processing apparatus 10 also includes a gas supply unit, which includes a gas input component 610 and a gas output component 620. The gas input component 610 is used to introduce gas into the first cavity 201, and the gas output component 620 is used to discharge the gas in the first cavity 201.

[0147] During the drying process of substrate 20, inactive gases such as nitrogen are continuously introduced through gas input component 610, which can reduce the risk of substrate 20 being contaminated. Furthermore, the vapor formed by the vaporization of substrate processing liquid 40 in the first chamber 201 can be removed through gas output component 620 by gas pressure, thereby improving drying efficiency.

[0148] In some embodiments, the gas supply unit further includes a pressure sensor for detecting the pressure inside the first cavity 201, and the gas supply unit is configured to:

[0149] When the air pressure in the first cavity 201 measured by the air pressure sensor is lower than the third preset value, the gas input component 610 increases the air intake flow and / or the gas output component 620 decreases the exhaust flow.

[0150] When the air pressure in the first cavity 201 measured by the air pressure sensor is higher than the third preset value, the gas input component 610 reduces the air intake flow and / or the gas output component 620 increases the exhaust flow.

[0151] It should be understood that when the gas input component 610 increases the intake flow rate or the gas output component 620 decreases the exhaust flow rate, the gas pressure in the first cavity 201 increases, and the boiling point of the substrate processing liquid 40 also increases; when the gas input component 610 decreases the intake flow rate or the gas output component 620 increases the exhaust flow rate, the gas pressure in the first cavity 201 decreases, and the boiling point of the substrate processing liquid 40 also decreases.

[0152] The gas supply unit independently controls the gas pressure inside the first cavity 201. That is, the gas supply unit adjusts the air intake flow rate of the gas input component 610 and the exhaust flow rate of the gas output component 620 based on the gas pressure inside the first cavity 201 measured by the gas pressure sensor, thereby controlling the gas pressure inside the first cavity 201. This controls the boiling point of the substrate processing liquid 40, thereby controlling the speed of bubble generation. At the same time, by controlling the gas pressure inside the first cavity 201, the size of the bubbles and the supporting force of the bubbles on the pattern 31 can also be controlled.

[0153] In some embodiments, the pressure sensor, gas input component 610, and gas output component 620 are all connected to the control unit, and the gas supply unit is configured as follows:

[0154] When the air pressure in the first cavity 201 measured by the air pressure sensor is lower than the third preset value, the control unit controls the gas input component 610 to increase the air intake flow and / or the control unit controls the gas output component 620 to decrease the exhaust flow.

[0155] When the air pressure in the first cavity 201 measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component 610 to reduce the air intake flow and / or the control unit controls the gas output component 620 to increase the exhaust flow.

[0156] By connecting the pressure sensor, gas input component 610 and gas output component 620 via the control unit, the pressure inside the first cavity 201 can be controlled. Compared with the scheme of independently controlling the pressure inside the first cavity 201 via the gas supply unit, the structure of the gas supply unit can be simplified, the manufacturing cost of the substrate processing apparatus 10 can be reduced, and centralized control of different components in the substrate processing apparatus 10 can be achieved.

[0157] In some embodiments, the gas supply unit includes a second temperature sensor and a third heater. The second temperature sensor is used to detect the gas temperature inside the first cavity 201, and the third heater is used to heat the gas introduced into the first cavity 201 by the gas input component 610 before the gas enters the first cavity 201.

[0158] Before the gas is introduced into the first cavity 201, the gas temperature inside the first cavity 201 can be detected by the second temperature sensor and heated by the third heater. This can stabilize the gas temperature inside the first cavity 201, reduce the difficulty of controlling the gas pressure inside the first cavity 201, and also avoid excessive differences between the gas temperature and the substrate processing liquid 40 temperature, which would cause large fluctuations in the temperature of the substrate processing liquid 40 and have an adverse effect on controlling the size and generation speed of the bubbles.

[0159] Furthermore, when using the substrate processing apparatus 10, the substrate 20 is first moved into the first chamber 201 and placed horizontally on the holder 100. Then, substrate processing liquid 40 with a temperature equal to a first preset value and a liquid level at a second preset value is provided to the front side of the substrate 20. The second preset value is equal to or higher than the front side of the substrate 20. The substrate is then heated by electromagnetic waves emitted by the first heater 300 until the surface of the substrate 20 is dry. During the drying process of the substrate 20 surface, the liquid level of the substrate processing liquid 40 on the substrate 20 drops as it evaporates. When the remaining amount of substrate processing liquid 40 is small and insufficient to form bubbles that can support the pattern 31 during vaporization, the third heater heats the gas and then introduces the gas into the first chamber 201 to quickly dry the surface of the substrate 20.

[0160] Preferably, before the substrate processing liquid 40 on the surface of the substrate 20 is completely evaporated, the first heater 300 can continue to heat, and the remaining substrate processing liquid 40 in the first cavity 201 is dried by hot air and the first heater 300 together.

[0161] In some embodiments, the gas supply unit is configured to:

[0162] When the gas temperature in the first cavity 201 measured by the second temperature sensor is lower than the fourth preset value, the third heater heating gas input component 610 introduces gas into the first cavity 201, and the fourth preset value is less than or equal to the first preset value.

[0163] When the gas temperature in the first cavity 201 measured by the second temperature sensor is equal to or higher than the fourth preset value, the third heater stops heating or reduces the heating power.

[0164] The gas supply unit independently controls the gas temperature in the first chamber 201. That is, the gas supply unit controls the third heater to heat or stop heating based on the gas temperature in the first chamber 201 measured by the second temperature sensor, thereby controlling the gas temperature in the first chamber 201 to stabilize the gas temperature.

[0165] In some embodiments, both the second temperature sensor and the third heater are connected to the control unit, which is configured to:

[0166] When the gas temperature in the first cavity 201 measured by the second temperature sensor is lower than the fourth preset value, the control unit controls the third heater to heat the gas input component 610 to introduce gas into the first cavity 201.

[0167] When the gas temperature in the first cavity 201 measured by the second temperature sensor is equal to or higher than the fourth preset value, the control unit controls the third heater to stop heating or reduce the heating power.

[0168] By connecting the second temperature sensor and the third heater through the control unit to control the gas temperature in the first cavity 201, compared with the scheme of independently controlling the gas temperature in the first cavity 201 through the gas supply unit, the structure of the gas supply unit can be simplified, the manufacturing cost of the substrate processing apparatus 10 can be reduced, and centralized control of different components in the substrate processing apparatus 10 can be achieved.

[0169] See Figure 1 As shown, the substrate processing apparatus 10 also includes a vibrator 700, which can apply vibration to the substrate processing liquid 40. The vibrator 700 can be disposed on the holder 100 or on the processing container 200. The vibrator 700 can directly contact the substrate processing liquid 40 or indirectly vibrate the substrate processing liquid 40 through the vibrating substrate 20. The vibration frequency of the vibrator 700 is 10kHz to 3MHz. It should be understood that the purpose of the vibration of the vibrator 700 is to cause the bubbles formed by the vaporization of the substrate processing liquid 40 during the heating of the substrate processing liquid 40 by the first heater 300 to rise. The vibration frequency and amplitude of the vibrator 700 are selected to facilitate the rise of the bubbles. Preferably, the vibration frequency and amplitude of the vibrator 700 are adjustable. Further, the vibrator 700 is connected to a control unit, which can at least control the switching of the vibrator 700. Optionally, the control unit can also control the vibration frequency and amplitude of the vibrator 700.

[0170] The vibrator 700 applies vibration to the substrate processing liquid 40, which can cause the bubbles generated by the vaporization of the portion of the substrate processing liquid 40 near the substrate 20 to rise, which is beneficial to control the size and generation speed of the bubbles.

[0171] In some embodiments, the vibrator 700 may be turned on during the heating of the substrate processing liquid 40 by the first heater 300, but this is not limited to this and depends on the specific circumstances. Optionally, the vibrator 700 may also be turned on during the addition of the substrate processing liquid 40, so that the substrate processing liquid 40 can completely fill the pattern gaps 32, avoiding the presence of unvented gas in the pattern gaps 32, which would affect the drying process.

[0172] See Figure 1As shown, the retainer 100 includes a connecting plate 110 and a chuck 120. The connecting plate 110 is disposed within the processing container 200. Optionally, the processing container 200 below the lower surface of the connecting plate 110 forms a second cavity 202. The connecting plate 110 is sealed to the processing container 200. The connecting plate 110 is made of a highly transparent material such as glass. It is understood that the material of the connecting plate 110 allows the electromagnetic waves emitted by the first heater 300 to have high transmittance, for example, transmittance greater than 90%. The connecting plate 110 is connected to the processing container 200. For example, the processing container 200 may also include a support member 210 protruding into the interior of the processing container 200, which supports the connecting plate 110. Optionally, the support member 210 can be sealed to the connecting plate 110.

[0173] It should be noted that the connection between the connecting plate 110 and the processing container 200 can be either a fixed connection or a detachable connection; this application does not limit the specific connection method. A chuck 120 is disposed on the connecting plate 110 and is used to clamp the substrate 20. The first cavity 201 includes the portion of the inner cavity of the processing container 200 located above the lowest contact position between the holder 100 and the substrate; that is, the first cavity 201 includes the portion of the inner cavity of the processing container 200 located above the lowest contact position between the chuck 120 and the substrate. The side surface and / or the area of ​​the back surface of the substrate 20 near the side surface of the substrate 20 are detachably and sealed to the chuck 120 to prevent the substrate processing liquid 40 from flowing below the substrate 20, ensuring that the back surface of the substrate 20 is free of substrate processing liquid 40 during the substrate 20 processing.

[0174] When the chuck 120 holds the substrate 20, the vibrator 700 can contact the substrate 20, thereby indirectly vibrating the substrate processing liquid 40 by vibrating the substrate 20. For example, the vibrator 700 can be disposed on the connecting plate 110.

[0175] The retainer 100 includes a connecting plate 110. The connecting plate 110 is made of a high-transmittance material such as glass, which can reduce the influence of the connecting plate 110 on the heating substrate processing liquid 40 of the first heater 300. However, this is not a limitation. In some embodiments, the retainer 100 includes a chuck 120 instead of the connecting plate 110. The chuck 120 can be disposed on the support member 210. The specific arrangement depends on the situation. As long as the retainer 100 can be detachably and sealed to the side of the substrate 20 and / or the back of the substrate 20 near the side of the substrate 20, and prevents the substrate processing liquid 40 from flowing under the substrate 20.

[0176] In some implementations, the control unit can be programmed to implement any of the parameter adjustments and control processes disclosed above. Parameter adjustments include the wavelength of the electromagnetic waves emitted by the first heater 300 and the waveform of the irradiance of the emitted electromagnetic waves. The control processes include the integrated control of the workflow of any components connected to the control unit, such as the first heater 300, the liquid temperature control unit 400, the liquid input unit 510, the liquid discharge unit 520, the gas input component 610, the gas output component 620, and the vibrator 700. The control unit may include a user interface capable of inputting parameters and programming instructions, through which the parameter adjustment range and control process can be modified.

[0177] In some implementations, the substrate processing apparatus 10 includes a control unit, and the control units of multiple substrate processing apparatuses 10 may be connected to each other or multiple substrate processing apparatuses 10 may share a control unit. The control unit may be connected to the host system of the wafer fab (FAB) or the control unit may be part of the host system.

[0178] This application also provides a substrate processing method, which can be used to process substrate 20 using the substrate processing apparatus 10 disclosed above, but is not limited to processing substrate 20 using the substrate processing apparatus 10 disclosed above. See also Figure 1 and Figure 6 As shown, the substrate processing method includes:

[0179] S100: Horizontally hold substrate 20;

[0180] S200: Provide substrate processing liquid 40 with a temperature equal to a first preset value to the front side of substrate 20. The liquid level of substrate processing liquid 40 is not lower than the front side of substrate 20, and the first preset value is 1°C to 10°C lower than the boiling point of substrate processing liquid 40.

[0181] S300: The substrate processing liquid 40 is heated by electromagnetic waves passing through the back of the substrate 20 until the portion of the substrate processing liquid 40 near the substrate 20 vaporizes and generates bubbles. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid 40.

[0182] It is understood that after providing substrate processing liquid 40 with a temperature equal to the first preset value to the front side of substrate 20 in step S200, step S300 is executed, so that the temperature of substrate processing liquid 40 is raised to exceed the first preset value. That is, after providing substrate processing liquid 40, especially during the heating of substrate processing liquid 40 in step S300, the temperature of substrate processing liquid 40 is not lower than the first preset value.

[0183] See Figure 2As shown, after cleaning the substrate 20, substrate treatment liquid 40 remains in the pattern gaps 32 on the surface of the substrate 20. The surface tension of the substrate treatment liquid 40 will exert a pulling force on the pattern, which greatly increases the risk of deformation or collapse of the fine pattern during the drying process, and thus leads to a significant decrease in product yield.

[0184] See Figure 3 As shown, when processing substrate 20, substrate 20 is held horizontally, and then substrate processing liquid 40 with a temperature equal to a first preset value is provided to the front side of substrate 20. The first preset value is 1°C to 10°C lower than the boiling point of substrate processing liquid 40, and the liquid level of substrate processing liquid 40 is not lower than the front side of substrate 20. The patterns on the substrate surface are all immersed in substrate processing liquid 40, and the surface tension on both sides of the patterns is the same. The first preset value is close to the boiling point of substrate processing liquid 40. Then, electromagnetic waves are used to heat substrate processing liquid 40 from the back side of substrate 20. The portion of substrate processing liquid 40 near substrate 20 is heated and rapidly vaporizes to generate bubbles. The wavelength of the electromagnetic waves can be configured so that the electromagnetic waves can pass through substrate 20 without being absorbed by substrate 20, and the electromagnetic waves can be absorbed by substrate processing liquid 40, thereby achieving the heating of the portion of substrate processing liquid 40 near substrate 20. Figure 3 Regions B and C are shown in the diagram.

[0185] It is understandable that, due to the vaporization of the portion of the substrate processing liquid 40 near the substrate 20 upon heating, bubbles are continuously generated and rise from the bottom of the substrate processing liquid 40, and these bubbles can provide support for the pattern. As drying proceeds, the substrate processing liquid 40 evaporates, the liquid level of the substrate processing liquid 40 decreases, and the surface tension of the substrate processing liquid 40 acts on the sidewalls of the pattern. However, the bubble tension can offset the pulling force generated by the surface tension of the substrate processing liquid 40, such as... Figure 4 As shown, this reduces the risk of deformation or collapse of fine patterns during the drying process and improves product yield.

[0186] It is understood that the temperature of the substrate processing liquid 40 is equal to the first preset value, including the temperature of the substrate processing liquid 40 being 0 to 5% higher or lower than the first preset value, as long as it is lower than the boiling point of the substrate processing liquid 40.

[0187] In some embodiments, providing a substrate processing liquid 40 with a temperature equal to a first preset value to the front side of the substrate 20 includes:

[0188] A substrate processing liquid 40 with a temperature lower than a first preset value is provided to the front side of the substrate 20 until the liquid level of the substrate processing liquid 40 is not lower than the front side of the substrate 20.

[0189] The substrate processing liquid 40 is heated until its temperature equals a first preset value.

[0190] It should be noted that heating the substrate processing liquid 40 until its temperature equals the first preset value can be done using the same or different heaters as heating the substrate processing liquid 40 by passing electromagnetic waves through the back of the substrate 20. When the substrate processing method is used to process the substrate 20 in the substrate processing apparatus 10, the first heater 300 is used to heat the substrate processing liquid 40 by passing electromagnetic waves through the back of the substrate 20, and the second heater is used to heat the substrate processing liquid 40 until its temperature equals the first preset value.

[0191] First, a substrate processing liquid 40 with a temperature lower than a first preset value is provided to the front side of the substrate 20. Then, the substrate processing liquid 40 is heated until its temperature equals the first preset value. This reduces the difficulty of providing the substrate processing liquid 40 and the accuracy of temperature control of the substrate processing liquid 40. It also reduces the difficulty of controlling the electromagnetic radiation intensity of heating the substrate processing liquid 40 in step S300 and reduces the risk of pattern collapse during the drying process.

[0192] Optionally, a substrate processing liquid 40 with a temperature equal to a first preset value is provided to the front side of the substrate 20, and the liquid level of the substrate processing liquid 40 is higher than the front side of the substrate 20. This includes first inputting a substrate processing liquid 40 with a temperature lower than the first preset value until the liquid level of the substrate processing liquid 40 is higher than a second preset value, and the second preset value is not lower than the front side of the substrate 20; then discharging a portion of the substrate processing liquid 40 until its liquid level is equal to the second preset value; and then heating the substrate processing liquid 40 until its temperature is equal to the first preset value. In some embodiments, providing a substrate processing liquid 40 with a temperature equal to the first preset value to the front side of the substrate 20, and the liquid level of the substrate processing liquid 40 is higher than the front side of the substrate 20, includes directly inputting a substrate processing liquid 40 with a temperature equal to the first preset value until the liquid level of the substrate processing liquid 40 is higher than the second preset value, and the second preset value is not lower than the front side of the substrate 20; and then discharging a portion of the substrate processing liquid 40 until its liquid level is equal to the second preset value.

[0193] In some embodiments, the wavelength of the electromagnetic wave that passes through the back side of the substrate 20 to heat the substrate processing liquid 40 is 1 μm to 1000 μm.

[0194] When the substrate 20 is a wafer for fabricating integrated circuits, the material of the substrate 20 is usually silicon. The substrate treatment liquid 40 used in the cleaning step before drying the substrate 20, that is, the substrate treatment liquid 40 that needs to be evaporated in the drying step, is usually deionized water, isopropanol, ethanol, etc. Electromagnetic waves with wavelengths of 1μm to 1000μm are not absorbed by silicon. A wavelength range with a higher absorption rate can be selected for different substrate treatment liquids 40, so that the electromagnetic waves emitted by the first heater 300 can pass through the silicon substrate 20 and directly heat the substrate treatment liquid 40 such as deionized water, isopropanol, ethanol, etc.

[0195] In some embodiments, the electromagnetic wave is a pulsed electromagnetic wave, which alternately heats the substrate processing liquid 40 with a first irradiance I1 or a second irradiance I2, such as... Figure 5 As shown.

[0196] The substrate processing method includes controlling at least one of the magnitude of the first irradiance I1 and the second irradiance I2, the length of the period T, and the ratio of the first irradiance I1 and the second irradiance I2 within one period T, thereby controlling the overall irradiance of the first heater 300, which in turn controls the size and generation rate of the bubbles.

[0197] In some embodiments, during the process of heating the substrate processing liquid 40 from the back side of the substrate 20 using electromagnetic waves, ultrasonic vibration is applied to the substrate processing liquid 40, with a vibration frequency of 10 kHz to 3 MHz. When the substrate 20 is processed using the substrate processing apparatus 10 in the substrate processing method, ultrasonic vibration is applied by a vibrator 700. For example, the vibrator 700 may directly contact the substrate processing liquid 40 to apply vibration, or the vibrator 700 may apply vibration to the substrate 20 to indirectly apply vibration to the substrate processing liquid 40. Optionally, the vibrator 700 is turned off after the surface of the substrate 20 has dried.

[0198] During the process of heating the substrate processing liquid 40 from the back of the substrate 20 using electromagnetic waves, applying ultrasonic vibration to the substrate processing liquid 40 can cause the bubbles formed by the vaporization of the substrate processing liquid 40 to rise, which is beneficial for controlling the size and generation speed of the bubbles.

[0199] In some embodiments, during the process of heating the substrate processing liquid 40 from the back side of the substrate 20 using electromagnetic waves, a gas, including an inactive gas such as nitrogen, is supplied to the surface of the substrate processing liquid 40. When the substrate processing method is used by the substrate processing apparatus 10 to process the substrate 20, a gas input component 610 is used to introduce gas into the first cavity 201, and a gas output component 620 is used to discharge the gas from the first cavity 201.

[0200] During the substrate treatment process of substrate 20 and the drying process of substrate 20, gas is continuously supplied to the surface of substrate treatment liquid 40, which can reduce the risk of substrate 20 being contaminated and facilitate the removal of the bulk generated by the evaporation of substrate treatment liquid 40, thereby controlling the drying speed.

[0201] In some embodiments, the temperature of the gas supplied to the surface of the substrate processing liquid 40 is equal to a fourth preset value, the fourth preset value is less than or equal to a first preset value, and the fourth preset value is higher than the freezing point of the substrate processing liquid 40. The temperature of the supplied gas may also be 0-5% higher or lower than the fourth preset value, as long as the temperature of the supplied gas is lower than the boiling point of the substrate processing liquid 40.

[0202] By controlling the temperature of the gas supplied to the surface of the substrate processing liquid 40, the gas temperature within the first chamber 201 can be stabilized. During the drying process of the substrate 20 surface, the surface of the substrate processing liquid 40 on the substrate 20 decreases as it evaporates. When the remaining amount of substrate processing liquid 40 is small and insufficient to form bubbles that can support the pattern during vaporization, providing heating gas can quickly dry the surface of the substrate 20.

[0203] In some embodiments, the substrate processing method further includes:

[0204] The air pressure at the surface of the substrate processing liquid 40 is controlled so that the size and generation speed of the bubbles are within a preset range.

[0205] When the substrate processing method is used in the substrate processing apparatus 10 to process the substrate 20, the gas input component 610 can be controlled to increase the intake flow rate or the gas output component 620 can be controlled to decrease the exhaust flow rate, thereby increasing the gas pressure in the first chamber 201 and increasing the boiling point of the substrate processing liquid 40 accordingly; the gas input component 610 can be controlled to decrease the intake flow rate or the gas output component 620 can be controlled to increase the exhaust flow rate, thereby decreasing the gas pressure in the first chamber 201 and decreasing the boiling point of the substrate processing liquid 40 accordingly.

[0206] The boiling point of the substrate processing liquid 40 is related to the gas pressure at the liquid surface. As the gas pressure at the liquid surface increases, the boiling point of the substrate processing liquid 40 increases; conversely, as the gas pressure decreases, the boiling point decreases. By controlling the gas pressure at the liquid surface of the substrate processing liquid 40, the boiling point of the liquid can be controlled, thereby controlling the rate of bubble generation. Furthermore, the gas pressure at the liquid surface can also control the size of the bubbles and their supporting force on the pattern.

[0207] It is understood that the size and generation speed of bubbles can be adjusted by regulating at least one of the following: the wavelength and waveform of the electromagnetic wave, the gas pressure and temperature at the liquid surface, and the ultrasonic vibration applied to the substrate processing liquid 40, so that the size and generation speed of bubbles are within a preset range. The film thickness, pattern density, and morphology of different regions on the substrate 20 may vary, and the preset ranges for the size and generation speed of bubbles in the substrate processing liquid 40 in different regions can be different, so that the evaporation rate of the substrate processing liquid 40 is adapted to the film thickness and morphology of different regions of the substrate 20, avoiding pattern collapse.

[0208] The terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0209] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0210] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0211] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.

Claims

1. A substrate processing apparatus, characterized in that, The substrate processing apparatus includes: A retainer for horizontally holding a substrate, the retainer being removably and sealingly connected to the side of the substrate and / or the back of the substrate near the side of the substrate. A processing container includes a first cavity for containing the substrate and a substrate processing liquid above the substrate, the depth of the first cavity being greater than the thickness of the substrate; A first heater is configured to emit electromagnetic waves from the back side of the substrate toward the substrate processing liquid, the wavelength of which is configured to penetrate the substrate and heat the substrate processing liquid. A liquid temperature control unit, comprising a second heater and a first temperature sensor, wherein the first temperature sensor is used to detect the temperature of the substrate processing liquid, and the second heater is used to heat the substrate processing liquid; The control unit confirms that the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than a first preset value, and controls the first heater to heat the substrate processing liquid.

2. The substrate processing apparatus according to claim 1, characterized in that, The wavelength of the electromagnetic wave emitted by the first heater is 1μm~1000μm.

3. The substrate processing apparatus according to claim 1 or 2, characterized in that, The first heater is capable of pulse heating.

4. The substrate processing apparatus according to claim 1, characterized in that, The liquid temperature control unit is configured as follows: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than the first preset value, the second heater heats the substrate processing liquid, wherein the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid; When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater stops heating the substrate processing liquid.

5. The substrate processing apparatus according to claim 1, characterized in that, Both the second heater and the first temperature sensor are connected to the control unit, which is configured to: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the control unit controls the second heater to heat the substrate processing liquid. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid. When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the control unit controls the second heater to stop heating the substrate processing liquid.

6. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a liquid level sensor, which is used to detect the liquid level position of the substrate processing liquid in the first cavity. The liquid level sensor, the second heater, and the first temperature sensor are all connected to the control unit. The control unit is configured to: confirm that the liquid level sensor detects that the liquid level position of the substrate processing liquid has reached a second preset value, and start executing the heating step. The second preset value is equal to or higher than the front side of the substrate. The heating step includes: When the temperature of the substrate processing liquid detected by the first temperature sensor is lower than a first preset value, the second heater is controlled to heat the substrate processing liquid. The first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid. When the temperature of the substrate processing liquid detected by the first temperature sensor is equal to or higher than the first preset value, the second heater is controlled to stop heating the substrate processing liquid, and the first heater is controlled to heat the substrate processing liquid.

7. The substrate processing apparatus according to claim 6, characterized in that, The liquid level sensor detects that the liquid level of the substrate processing liquid has reached a second preset value, including: The liquid level sensor detects that the liquid level of the substrate processing liquid has dropped to the second preset value.

8. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a liquid input section and a liquid discharge section. The liquid input section is used to introduce the substrate processing liquid into the first cavity, and the liquid discharge section is used to discharge the substrate processing liquid from the first cavity.

9. The substrate processing apparatus according to claim 8, characterized in that, The substrate processing apparatus further includes a liquid level sensor, which is used to detect the liquid level position of the substrate processing liquid in the first cavity.

10. The substrate processing apparatus according to claim 9, characterized in that, The liquid discharge section is configured as follows: When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is higher than a second preset value, the liquid discharge section is opened to discharge the liquid. The second preset value is equal to or higher than the front side of the substrate. When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to or lower than the second preset value, the liquid discharge section is closed.

11. The substrate processing apparatus according to claim 9, characterized in that, Both the liquid level sensor and the liquid discharge section are connected to the control unit, which is configured to: When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is higher than a second preset value, the control unit controls the liquid discharge unit to start discharging liquid, and the second preset value is equal to or higher than the front side of the substrate. When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to or lower than the second preset value, the control unit controls the liquid discharge unit to stop discharging liquid.

12. The substrate processing apparatus according to claim 9, characterized in that, The liquid level sensor, the liquid input section, and the liquid discharge section are all connected to the control unit, which is configured as follows: The liquid input section is controlled to open, so as to input the substrate processing liquid into the first cavity; After the liquid level sensor detects that the liquid level of the substrate processing liquid is higher than a second preset value, the liquid input section is controlled to close and the liquid discharge section is controlled to open to discharge the liquid. The second preset value is equal to or higher than the front side of the substrate. When the liquid level of the substrate processing liquid in the first cavity detected by the liquid level height sensor is equal to the second preset value, the liquid discharge section is closed, and the second preset value is equal to or higher than the front side of the substrate.

13. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a gas supply unit, which includes a gas input component and a gas output component. The gas input component is used to introduce gas into the first cavity, and the gas output component is used to discharge gas from the first cavity.

14. The substrate processing apparatus according to claim 13, characterized in that, The gas supply unit further includes a pressure sensor for detecting the gas pressure within the first cavity. The gas supply unit is configured as follows: When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the gas input component increases the air intake flow rate and / or the gas output component decreases the exhaust flow rate. When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the gas input component reduces the intake flow rate and / or the gas output component increases the exhaust flow rate.

15. The substrate processing apparatus according to claim 13, characterized in that, The gas supply unit further includes a pressure sensor for detecting the pressure inside the first cavity. The pressure sensor, the gas input component, and the gas output component are all connected to the control unit. The gas supply unit is configured as follows: When the air pressure in the first cavity measured by the air pressure sensor is lower than a third preset value, the control unit controls the gas input component to increase the air intake flow rate and / or the control unit controls the gas output component to decrease the exhaust flow rate. When the air pressure in the first cavity measured by the air pressure sensor is higher than the third preset value, the control unit controls the gas input component to reduce the air intake flow rate and / or the control unit controls the gas output component to increase the exhaust flow rate.

16. The substrate processing apparatus according to claim 13, characterized in that, The gas supply unit includes a second temperature sensor and a third heater. The second temperature sensor is used to detect the gas temperature in the first cavity, and the third heater is used to heat the gas introduced into the first cavity by the gas input component before the gas enters the first cavity.

17. The substrate processing apparatus according to claim 16, characterized in that, The gas supply unit is configured as follows: When the gas temperature in the first cavity measured by the second temperature sensor is lower than the fourth preset value, the third heater heats the gas introduced into the first cavity by the gas input component. The fourth preset value is less than the first preset value, and the first preset value is lower than the boiling point of the substrate processing liquid by 1°C to 10°C. When the gas temperature in the first cavity, as measured by the second temperature sensor, is equal to or higher than the fourth preset value, the third heater stops heating or reduces its heating power.

18. The substrate processing apparatus according to claim 16, characterized in that, Both the second temperature sensor and the third heater are connected to the control unit, which is configured to: When the gas temperature in the first cavity measured by the second temperature sensor is lower than the fourth preset value, the control unit controls the third heater to heat the gas introduced into the first cavity by the gas input component. The fourth preset value is less than the first preset value, and the first preset value is lower than the boiling point of the substrate processing liquid by 1°C to 10°C. When the gas temperature in the first cavity, as measured by the second temperature sensor, is equal to or higher than the fourth preset value, the control unit controls the third heater to stop heating or reduce the heating power.

19. The substrate processing apparatus according to claim 1, characterized in that, The substrate processing apparatus further includes a vibrator capable of applying vibration to the substrate processing liquid, wherein the vibration frequency of the vibrator is 10kHz to 3MHz.

20. A substrate processing method, characterized in that, include: Provide a substrate processing apparatus as described in any one of claims 1 to 19; Hold the substrate horizontally; A substrate processing liquid with a temperature equal to a first preset value is provided to the front side of the substrate, wherein the liquid level of the substrate processing liquid is not lower than the front side of the substrate, and the first preset value is 1°C to 10°C lower than the boiling point of the substrate processing liquid. The substrate processing liquid is heated by electromagnetic waves passing through the back of the substrate until the portion of the substrate processing liquid near the substrate vaporizes and generates bubbles.

21. The substrate processing method according to claim 20, characterized in that, The substrate processing liquid provided to the front side of the substrate at a temperature equal to a first preset value includes: The substrate processing liquid with a temperature lower than the first preset value is provided to the front side of the substrate until the liquid level of the substrate processing liquid is not lower than the front side of the substrate. The substrate processing solution is heated until its temperature equals the first preset value.

22. The substrate processing method according to claim 20, characterized in that, The wavelength of the electromagnetic wave is 1μm to 1000μm.

23. The substrate processing method according to claim 22, characterized in that, The electromagnetic wave is a pulsed electromagnetic wave.

24. The substrate processing method according to claim 20, characterized in that, During the process of heating the substrate processing liquid from the back of the substrate using electromagnetic waves, ultrasonic vibrations are applied to the substrate processing liquid to cause the bubbles to rise.

25. The substrate processing method according to claim 20, characterized in that, During the process of heating the substrate processing liquid from the back of the substrate using electromagnetic waves, gas is supplied to the surface of the substrate processing liquid.

26. The substrate processing method according to claim 25, characterized in that, The temperature of the gas supplied to the surface of the substrate processing liquid is equal to a fourth preset value, which is less than or equal to the first preset value.

27. The substrate processing method according to claim 20, characterized in that, The substrate processing method further includes: The air pressure at the surface of the substrate processing liquid is controlled so that the size and generation speed of the bubbles are within a preset parameter range.

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