Diode packaging structure for photovoltaic module

Abstract

The invention discloses a packaging structure of a diode for a photovoltaic module. The packaging structure comprises at least one conducting strip; the double-diode chips are connected in parallel or in series, the double-diode chips comprise a first diode chip and a second diode chip, and the first diode chip and the second diode chip are arranged on at least one conducting strip; the jumper wire is connected with the conducting strip provided with the double-diode chip and an external electrode, and the jumper wire comprises a thermistor which is used for disconnecting a series loop or a parallel loop of the double-diode chip along with temperature rise; and the packaging body wraps the dual-diode chip and the jumper wire. According to the invention, the forward current of a single diode when the diode is in a forward state can be reduced, and the reverse bias voltage of the single diode when the diode is in a reverse bias state can also be reduced, so that the diode has better current-carrying capacity, load capacity and heat dissipation capacity, and also has an overheating protection function; the safety and reliability of the diode in outdoor work are greatly improved, and the comprehensive cost is lower.

Description

Technical Field

[0001] The invention relates to the technical field of photovoltaic module packaging, and in particular to a diode packaging structure for a photovoltaic module. Background Art

[0002] In order to avoid the loss of power generation efficiency and component safety risks caused by the hot spot effect of photovoltaic modules, one or more bypass diodes are usually installed in the photovoltaic junction box. At present, the typical photovoltaic junction box is a glue-filled junction box, and the diode packaging methods include axial type, SMD type, and modular structure. As the power requirements of photovoltaic modules are getting higher and higher, module diodes are gradually becoming the mainstream.

[0003] At present, the mainstream packaging solution for module diodes is single-chip packaging, and you can choose Schottky trench chips or Schottky planar chips. When the working current is too large, the chip size can only be increased to increase the copper sheet area, thereby improving its current carrying capacity, load capacity, and heat dissipation capacity to meet performance requirements, and when the working voltage is too large, the load capacity can only be improved by increasing the chip specifications, but this will lead to increased product costs. In addition, when the diode is working in the forward direction, it will be in high current operation for a long time, and when the power station group is connected in series in reverse, a very large current will instantly flow in the forward direction. Both of these situations will cause the diode to heat up abnormally and burn out.

[0004] In order to solve the above-mentioned problems existing in the prior art, the art urgently needs an improved diode packaging technology for photovoltaic modules, which can reduce the forward current of a single diode when the module diode is in a forward state, and can also reduce the reverse bias voltage of a single diode when the module diode is in a reverse bias state, so that the module diode has better current carrying capacity, load capacity and heat dissipation capacity, and also has an overheating protection function, which greatly improves the safety and reliability of the module diode working outdoors, and has a lower overall cost. Summary of the invention

[0005] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a diode packaging structure for photovoltaic modules, which can reduce the forward current of a single diode when the module diode is in a forward state, and can also reduce the reverse bias voltage of a single diode when the module diode is in a reverse bias state, so that the module diode has better current carrying capacity, load capacity and heat dissipation capacity, and also has an overheating protection function, which greatly improves the safety and reliability of the module diode working outdoors, and has a lower overall cost.

[0007] Specifically, according to one aspect of the present invention, the diode packaging structure for the above-mentioned photovoltaic module includes: at least one conductive sheet; a dual diode chip and a dual conductive sheet connected in parallel or in series, the dual diode chip includes a first diode chip and a second diode chip, and the first diode chip and the second diode chip are arranged on the at least one conductive sheet; a jumper connecting the conductive sheet with the dual diode chip and an external electrode, wherein the jumper includes a thermistor for disconnecting the series circuit or parallel circuit of the dual diode chip as the temperature rises; and a packaging body, wrapping the dual diode chip and the jumper to insulate and package them.

[0008] Furthermore, in some embodiments of the present invention, the first diode chip and the second diode chip are jointly arranged on the first surface of the first conductive sheet, wherein the cathodes of the first diode chip and the second diode chip are connected to the first surface of the first conductive sheet, and the anodes of the first diode chip and the second diode chip are connected to the jumper wire, and are connected to the external electrode via the jumper wire to form a parallel circuit of the dual diode chips.

[0009] Furthermore, in some embodiments of the present invention, the first diode chip and the second diode chip are jointly arranged on a first conductive sheet, and the first diode chip and the second diode chip are respectively arranged at different relative positions on a first surface of the first conductive sheet and a second surface opposite to the first surface, wherein the cathode of the first diode chip is connected to the first surface of the first conductive sheet, the cathode of the second diode chip is connected to the second surface of the first conductive sheet, the anode of the first diode chip and the anode of the second diode chip are connected to the jumper wire, and are connected to the external electrode via the jumper wire to form a parallel circuit of the dual diode chips.

[0010] Furthermore, in some embodiments of the present invention, the first diode chip and the second diode chip are respectively arranged on the first conductive sheet and the second conductive sheet, wherein the positive electrode of the first diode chip is connected to the first surface of the first conductive sheet, the negative electrode of the second diode chip is connected to the first surface of the second conductive sheet, and the negative electrode of the first diode chip and the positive electrode of the second diode chip are connected through the jumper to form a series circuit of the dual diode chips.

[0011] Furthermore, in some embodiments of the present invention, the first diode chip and the second diode chip are respectively arranged on the first conductive sheet and the second conductive sheet, wherein the positive electrode of the first diode chip is connected to the second surface of the first conductive sheet, the negative electrode of the first diode chip is connected to the first jumper and connected to the second surface of the second conductive sheet via the first jumper, the negative electrode of the second diode chip is connected to the first surface of the second conductive sheet, the positive electrode of the second diode chip is connected to the second jumper and connected to the first surface of the first conductive sheet via the second jumper, so as to form a parallel circuit of the dual diode chips.

[0012] Furthermore, in some embodiments of the present invention, the packaging structure also includes: a third diode chip, which is arranged between the first conductive sheet and the second conductive sheet, and the first conductive sheet and the second conductive sheet are connected via the jumper to form a series circuit and / or a parallel circuit of multiple diode chips.

[0013] Furthermore, in some embodiments of the present invention, the jumper includes a first metal conductive segment and a second metal conductive segment disposed at both ends, the first metal conductive segment and the second metal conductive segment are connected through the thermistor, the resistance value of the thermistor increases with increasing temperature and decreases with decreasing temperature, so as to disconnect the series circuit or the parallel circuit at high temperature and connect the series circuit or the parallel circuit after the temperature drops.

[0014] Furthermore, in some embodiments of the present invention, an angle structure is formed between the first metal conductive segment, the second metal conductive segment, and the thermistor so that one end of the jumper is in contact with the surface of the conductive sheet, and the other end is in contact with the surface of the diode chip on another conductive sheet.

[0015] Furthermore, in some embodiments of the present invention, the package body is a package body made of polymer material.

[0016] Furthermore, in some embodiments of the present invention, the polymer material includes at least one of alicyclic epoxy resin, naphthalene-containing epoxy resin, dicyclopentadiene epoxy resin, dicyclopentadiene epoxy resin, fluorine-containing epoxy resin, silicon-containing epoxy resin, biphenyl-type epoxy resin, polyphenylene sulfide, and polyetheretherketone. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0018] Figure 1 A side view of a diode single chip packaging structure for a photovoltaic module in the prior art;

[0019] Figure 2 for Figure 1 A top view of the single chip packaging structure of the diode shown;

[0020] Figure 3 for Figure 1 A circuit diagram of a single chip package structure of a diode shown;

[0021] Figure 4 A side view of a diode packaging structure for a dual-core series-connected photovoltaic module provided according to some embodiments of the present invention is shown;

[0022] Figure 5 for Figure 4 A side view of a diode packaging structure for a dual-core series-connected photovoltaic module is shown;

[0023] Figure 6 for Figure 4 The circuit diagram of the diode packaging structure for the dual-core series-connected photovoltaic module shown;

[0024] Figure 7 A schematic structural diagram of a jumper provided according to some embodiments of the present invention is shown;

[0025] Figure 8 A side view of a diode packaging structure for a dual-core parallel photovoltaic assembly provided according to a first embodiment of the present invention is shown;

[0026] Fig. 9 for Figure 8 A top view of a diode packaging structure for a dual-core parallel photovoltaic module is shown;

[0027] Fig.10 for Figure 8 The circuit diagram of the diode packaging structure for the dual-core parallel photovoltaic module shown;

[0028] Fig.11 A top view of a diode shifting overlap for a dual-core parallel photovoltaic assembly according to a first embodiment of the present invention is shown;

[0029] Fig.12 A side view of a diode packaging structure for a dual-core parallel photovoltaic assembly provided according to a second embodiment of the present invention is shown;

[0030] Fig.13 for Fig.12 A top view of a diode packaging structure for a dual-core parallel photovoltaic module is shown;

[0031] Fig.14 A side view of a diode packaging structure for a dual-core parallel photovoltaic assembly provided in accordance with a third embodiment of the present invention is shown;

[0032] Fig.15 for Fig.14 A top view of a diode packaging structure for a dual-core parallel photovoltaic module is shown;

[0033] Fig.16 A schematic structural diagram of a jumper provided in some other embodiments of the present invention is shown;

[0034] Fig.17 A side view of a diode packaging structure for a multi-core series-connected photovoltaic assembly provided according to some embodiments of the present invention is shown;

[0035] Fig.18 for Fig.17 A top view of a diode packaging structure for a multi-core series-connected photovoltaic module is shown;

[0036] Fig.19 A side view showing a diode packaging structure for a multi-core series-connected photovoltaic assembly according to some other embodiments of the present invention; and

[0037] Fig. 20 for Fig.19 A top view of a diode packaging structure for a multi-core series-connected photovoltaic module is shown.

[0038] Reference numerals:

[0039] 100 Single chip packaging structure;

[0040] 110 chips;

[0041] 120 jumper wires;

[0042] 131 a first conductive sheet;

[0043] 132 second conductive sheet;

[0044] 140 package body;

[0045] 200, 400, 600, 700 diode packaging structure;

[0046] 211, 411, 611, 711 first diode chip;

[0047] 212, 412, 612, 712 second diode chip;

[0048] 220, 420, 620 jumpers;

[0049] 231, 431, 631, 731 first conductive sheet;

[0050] 232, 432, 632, 732 second conductive sheet;

[0051] 240, 440, 640, 740 package;

[0052] 221, 421 first metal conductive segment;

[0053] 222, 422 second metal conductive segment;

[0054] 223, 423 thermistor;

[0055] 721, 921 first jumper;

[0056] 722, 922 second jumper;

[0057] 900 diode packaging structure;

[0058] 911 First diode chip;

[0059] 912 second diode chip;

[0060] 913 third diode chip;

[0061] 931 a first conductive sheet;

[0062] 932 second conductive sheet;

[0063] 933 a third conductive sheet; and

[0064] 940 package. DETAILED DESCRIPTION

[0065] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0066] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0067] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0068] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0069] As mentioned above, the mainstream packaging solution for module diodes is single chip packaging. Figure 1 , 2 and 3, Figure 1 A side view of a single chip packaging structure of a diode for a photovoltaic module in the prior art. Figure 2 for Figure 1 A top view of the single chip package structure of the diode shown, Figure 3 for Figure 1 The circuit diagram of the single chip package structure of the diode is shown.

[0070] like Figure 1 and 2 As shown, in the single-chip packaging structure 100 of the diode used in the photovoltaic module, the chip 110 and the two conductive sheets are connected by a metal jumper 120, and then the chip 110 and the jumper 120 are packaged and wrapped by a package body 140. The chip 110 is directly welded on a single-sided conductive sheet, such as the second conductive sheet 132. This will result in that when the chip 110 is working and generating heat, 95% of the heat will be concentrated on the jumper 120 and the directly welded conductive sheet (the second conductive sheet 132), while the heat dissipation utilization rate of the conductive sheet at the other end (the first conductive sheet 131) is extremely low. Moreover, when the working current is too large, the chip size can only be increased to increase the copper sheet area, thereby improving its current carrying capacity, load capacity, and heat dissipation capacity, and when the working voltage is too large, the chip specifications can only be increased to improve its load capacity, but this will lead to an increase in product cost.

[0071] In order to solve the above problems existing in the prior art, the present invention provides a diode packaging structure for photovoltaic modules, which can reduce the forward current of a single diode when the module diode is in a forward state, and can also reduce the reverse bias voltage of a single diode when the module diode is in a reverse bias state, so that the module diode has better current carrying capacity, load capacity and heat dissipation capacity, and also has an overheating protection function, which greatly improves the safety and reliability of the module diode working outdoors, and has a lower overall cost.

[0072] Specifically, the present invention provides a diode packaging structure for a photovoltaic module, which can be used for packaging of multiple chips. The diode packaging structure for a photovoltaic module can include at least: at least one conductive sheet; a dual diode chip connected in parallel or in series, the dual diode chip can include a first diode chip and a second diode chip, and the first diode chip and the second diode chip can be arranged on at least one conductive sheet; a jumper, connecting the conductive sheet with the dual diode chip and an external electrode, wherein the jumper can include a thermistor to disconnect the series circuit of the dual diode chip as the temperature rises; and a package body, wrapping the dual diode chip and the jumper to insulate and package them.

[0073] Optionally, the diode chip can be a Schottky diode chip. The conductive sheet can be a metal sheet with good conductivity, such as a copper sheet. Then, the chip, the jumper, and the conductive sheet of the chip welding part and the conductive sheet of the jumper welding part can be all wrapped up by the package body to play the role of insulation, sealing and protection.

[0074] Next, the packaging structure of two diode chips will be taken as an example to clearly illustrate the diode packaging structure for the photovoltaic module provided by the present invention.

[0075] For further information, please see Figure 4 , 5 and 6, Figure 4 A side view of a diode packaging structure for a dual-core series-connected photovoltaic module provided in some embodiments of the present invention is shown. Figure 5 for Figure 4 The side view of the diode packaging structure for the dual-core series-connected photovoltaic module shown, Figure 6 for Figure 4 The circuit diagram of the diode packaging structure for a dual-core series-connected photovoltaic module is shown.

[0076] like Figure 4 and 5 As shown, in some embodiments of the present invention, the first diode chip 211 and the second diode chip 212 in the diode packaging structure 200 for photovoltaic modules can be located on the first conductive sheet 231 and the second conductive sheet 232, respectively. The positive electrode of the first diode chip 211 can be connected to the first surface (e.g., the upper surface) of the first conductive sheet 231, and the negative electrode of the second diode chip 212 can be connected to the first surface (e.g., the upper surface) of the second conductive sheet 232, and the negative electrode of the first diode chip 211 and the positive electrode of the second diode chip 212 can be connected through the jumper 220 to form a structure as shown in FIG. Figure 6 The series circuit of the dual diode chips shown.

[0077] The first diode chip 211 and the second diode chip 212 can be connected to the first conductive sheet 231 and the second conductive sheet 232 respectively by welding. After the welding connection is completed, the first diode chip 211 and the second diode chip 212 and the jumper 220 can be encapsulated and wrapped with a package body 240 made of a polymer material for insulation protection.

[0078] Since the polymer material has good insulation performance and mechanical strength, it can protect the chip from the influence of the external environment (for example, water vapor, temperature, pollution, etc.), and realize the composite functions of heat conduction, insulation, moisture resistance, pressure resistance, support, etc., and its cost is relatively controllable. Optionally, the polymer material used to make the package body 240 can further include at least one of alicyclic epoxy resin, naphthalene-containing epoxy resin, dicyclopentadiene epoxy resin, dicyclopentadiene epoxy resin, fluorine-containing epoxy resin, silicon-containing epoxy resin, biphenyl epoxy resin, polyphenylene sulfide, and polyetheretherketone.

[0079] In the embodiment of the diode packaging structure 200 for the above-mentioned dual-core series photovoltaic module, the first diode chip 211 and the second diode chip 212 can be directly welded on the left and right first conductive plates 231 and second conductive plates 232 respectively. Therefore, the excellent thermal conductivity of the two conductive plate metals can be fully utilized, thereby improving the heat dissipation efficiency and effectively reducing the temperature of the diode chip during operation.

[0080] Especially when the diode chip is in a reverse bias state and the load voltage is too high, a dual-core or multi-core series connection can be used to divide the voltage to reduce the reverse bias voltage of a single diode. As the reverse performance of the diode chip weakens as the temperature continues to rise, reducing the reverse bias voltage can greatly improve the safety and reliability of the diode at high temperatures.

[0081] For further information, see Figure 7 , Figure 7 A schematic structural diagram of a jumper provided according to some embodiments of the present invention is shown.

[0082] like Figure 7 As shown, the jumper 220 may include a first metal conductive segment 221 and a second metal conductive segment 222 located at both ends, and the middle of the first metal conductive segment 221 and the second metal conductive segment 222 may be wrapped and packaged by a thermistor 223 of PPTC material. When the temperature of the diode chip rises to an abnormal state, the resistance value of the thermistor 223 of PPTC material will continue to increase, and the circuit will be disconnected; and when the temperature drops and returns to the normal operating temperature, the resistance value of the thermistor 223 will also return to a very small level, which is equivalent to a wire. By replacing the pure metal jumper in the prior art with the structure of the jumper 220, the high-temperature overheat protection disconnection of the module diode can be achieved, and the self-recovery connection when the temperature drops can be achieved, which can prevent burning.

[0083] In addition, in some other embodiments of the present invention, a diode packaging structure for a dual-core parallel photovoltaic module is also disclosed.

[0084] Specifically, please see Figure 8 , 9 and 10, Figure 8 A side view of a diode packaging structure for a dual-core parallel photovoltaic module provided in accordance with a first embodiment of the present invention is shown. Fig. 9 for Figure 8 The top view of the diode packaging structure for the dual-core parallel photovoltaic module shown, Fig.10 for Figure 8 The circuit diagram of the diode packaging structure for a dual-core parallel photovoltaic module is shown.

[0085] like Figure 8 and9 As shown, in the first embodiment of the present invention, the first diode chip 411 and the second diode chip 412 in the diode packaging structure 400 for the photovoltaic module are located together on a conductive sheet, for example, the first surface of the second conductive sheet 432. The cathodes of the first diode chip 411 and the second diode chip 412 can be connected to the first surface (for example, the upper surface) of the second conductive sheet 432, and the anodes of the first diode chip 411 and the second diode chip 412 can be connected to the jumper 420, and can be connected to the first conductive sheet 431 via the jumper 420, so as to form a structure as shown in FIG. Fig.10 The parallel circuit of the dual diode chips is shown.

[0086] Optionally, the first conductive sheet 431 may be replaced by an external electrode such as a wire, and may form a parallel loop structure with the second conductive sheet 432 provided with the first diode chip 411 and the second diode chip 412 .

[0087] The first diode chip 411 and the second diode chip 412 can be welded to the second conductive sheet 432. After the welding connection is completed, the first diode chip 411 and the second diode chip 412 and the jumper 420 can be encapsulated and wrapped with a package body 440 made of a polymer material for insulation protection.

[0088] Those skilled in the art can understand that the above-mentioned solution of disposing the dual diode chip on the second conductive sheet 432 is only a non-limiting implementation provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, rather than to limit the protection scope of the present invention. In other embodiments, the dual diode chip can be disposed on the first conductive sheet 431.

[0089] However, for the diode packaging structure 400 for the dual-core parallel photovoltaic module, during the actual welding process of the first diode chip 411 and / or the second diode chip 412 and the jumper 420, due to the welding ability of the technicians or some other external reasons, the defect of shifting and overlapping the two chips may occur. Shifting and overlapping refers to the lower surface of one chip partially covering the upper surface of another chip during the welding process.

[0090] Specifically, see Fig.11 , Fig.11 A top view of a dual-core parallel-connected module diode shifting and lapping according to a first embodiment of the present invention is shown.

[0091] like Fig.11As shown, in the actual welding process, there is a probability that the chip position changes, resulting in the lower surface of one chip (for example, the second diode chip 412) partially covering the upper surface of another chip (for example, the first diode chip 411), and the circuit includes the following situations:

[0092] The current path of the first loop is: the first conductive sheet 431, the first diode chip 411 or the second diode chip 412, and the second conductive sheet 432. At this time, one of the first diode chip 411 and the second diode chip 412 is short-circuited by the other chip.

[0093] The current path of the second loop is: the first conductive sheet 431, the first diode chip 411, the second diode chip 412, and the second conductive sheet 432. At this time, the first diode chip 411 and the second diode chip 412 are connected in series, but the impedance of the overlapping part of the two chips is high, the heat generated during operation is high, and there is a risk of failure. The current path of the third loop is:

[0094] The current path of the third loop is: the first conductive sheet 431, the first diode chip 411, the second conductive sheet 432; and the first conductive sheet 431, the second diode chip 412, the second conductive sheet 432; and the first conductive sheet 431, the overlapping portion of the first diode chip 411 and the second diode chip 412, and the second conductive sheet 432. At this time, the first diode chip 411, the second diode chip 412, and the overlapping portion of the two are in parallel, but the impedance of the overlapping portion connecting the two chips is high, and the heat generated during operation is high, and there is still a risk of failure.

[0095] In this regard, the present invention provides a second embodiment to solve the defect of the first embodiment in which the two chips are shifted and overlapped when the chip and the jumper are welded and connected. In addition, the jumper area included in the second embodiment is larger, which can further improve the heat dissipation efficiency of the diode chip.

[0096] Specifically, see Fig.12 and 13 , Fig.12 A side view of a diode packaging structure for a dual-core parallel photovoltaic module provided in accordance with a second embodiment of the present invention is shown. Fig.13 for Fig.12 A top view of a diode packaging structure for a dual-core parallel photovoltaic module is shown.

[0097] like Fig.12 and 13As shown, in the second embodiment of the present invention, the first diode chip 611 and the second diode chip 612 in the diode packaging structure 600 for the photovoltaic module can be located together on a conductive sheet, for example, the second conductive sheet 632. However, the first diode chip 611 and the second diode chip 612 can be located at different relative positions on the first surface (for example, the upper surface) and the second surface (for example, the lower surface) opposite to the first surface of the second conductive sheet 632, respectively. The cathode of the first diode chip 611 can be connected to the first surface (for example, the upper surface) of the second conductive sheet 632, the cathode of the second diode chip 612 can be connected to the second surface (for example, the lower surface) of the second conductive sheet 632, and the anodes of the first diode chip 611 and the second diode chip 612 can be connected to the jumper 620, and connected to the first conductive sheet 631 via the jumper 620, so as to form as shown in FIG. Fig.10 The parallel circuit of the dual diode chips is shown.

[0098] Optionally, the first conductive sheet 631 may be replaced by an external electrode such as a wire, and may form a parallel loop structure with the second conductive sheet 632 provided with the first diode chip 611 and the second diode chip 612 .

[0099] The first diode chip 611 and the second diode chip 612 can be welded to the second conductive sheet 632. After the welding connection is completed, the first diode chip 611 and the second diode chip 612 and the jumper 620 can be encapsulated and wrapped with a package body 640 made of a polymer material for insulation protection.

[0100] Those skilled in the art can understand that the above-mentioned solution of disposing the dual diode chip on the second conductive sheet 632 is only a non-limiting implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, rather than to limit the protection scope of the present invention. In other embodiments, the dual diode chip can be disposed on the first conductive sheet 631.

[0101] In the second embodiment, the first diode chip 611 and the second diode chip 612 are respectively located at different relative positions on the first surface and the second surface opposite to the first surface of the second conductive sheet 632, thereby avoiding the problem of displacement and overlap of the two chips when the chip and the jumper are welded and connected in the first embodiment. In addition, if the first diode chip 611 and the second diode chip 612 in the second embodiment are set at the same relative positions on the first surface and the second surface, during the welding process, the two chips are welded at the same position at the same time, and the excessive concentration of heat will cause cold welding, thermal stress damage to the chip, etc., and if the welding is divided into two times, the second welding will cause the chip that has been welded for the first time to have cold welding, desoldering, etc. Therefore, the second embodiment sets the two chips at different relative positions on the first surface and the second surface, which can effectively avoid the above-mentioned problems in the welding process.

[0102] Furthermore, in order to enhance the excellent thermal conductivity of the conductive sheet metal in the packaging structure of the diode for the dual-core parallel photovoltaic module, improve the heat dissipation efficiency of the diode chip, and reduce the working temperature of the diode, the present invention also provides a third embodiment.

[0103] Specifically, see Fig.14 and 15 , Fig.14 FIG. 4 shows a side view of a dual-core parallel module diode packaging structure provided in accordance with a third embodiment of the present invention. Fig.15 for Fig.14 A top view of a dual-core parallel module diode packaging structure is shown.

[0104] like Fig.14 and 15 As shown, in the third embodiment of the present invention, the first diode chip 711 and the second diode chip 712 in the diode packaging structure 700 for the photovoltaic module can be located on the first conductive sheet 731 and the second conductive sheet 732, respectively. The positive electrode of the first diode chip 711 can be connected to the second surface (e.g., the lower surface) of the first conductive sheet 731, and the negative electrode of the first diode chip 711 can be connected to the first jumper 721, and connected to the second surface (e.g., the lower surface) of the second conductive sheet 732 via the first jumper 721. The negative electrode of the second diode chip 712 can be connected to the first surface (e.g., the upper surface) of the second conductive sheet 732, and the positive electrode of the second diode chip 712 can be connected to the second jumper 722, and connected to the first surface (e.g., the upper surface) of the first conductive sheet 731 via the second jumper 722, so as to form a structure as shown in FIG. Fig.10 The parallel circuit of the dual diode chips is shown.

[0105] The first diode chip 711 and the second diode chip 712 can be respectively welded to the first conductive sheet 731 and the second conductive sheet 732 by welding. After the welding connection is completed, the first diode chip 711 and the second diode chip 712 and the first jumper 721 and the second jumper 722 can be encapsulated and wrapped with a package body 740 made of a polymer material for insulation protection.

[0106] In the third embodiment, since the first diode chip 711 and the second diode chip 712 are respectively located on the first conductive sheet 731 and the second conductive sheet 732, compared with the second embodiment, it can not only solve the defect of the two chips shifting and overlapping when the chip and the jumper are welded and connected, which may occur in the first embodiment, but also make full use of the excellent thermal conductivity of the two conductive sheet metals, improve the heat dissipation efficiency, and reduce the temperature of the diode chip when it is working.

[0107] In the embodiments of the above-mentioned dual-core parallel module diode packaging structure 400, 600, and 700, when the diode chip is in the forward working state and the forward current is too high, a dual-core or multi-core parallel method can be adopted to shunt the current to reduce the forward current of a single diode, thereby reducing the heat generated by the diode chip during forward operation, thereby improving the reliability of the product.

[0108] In addition, in the prior art, when the short-circuit current of the diode applicable component product is large, or the use environment is a high-irradiation area and the component current is large, the conventional solution is to increase the chip size and the area of ​​the conductive sheet (such as a copper sheet) to improve the heat dissipation capacity to meet the performance requirements; however, if the multi-core parallel packaging method provided by the present invention is used, a small-area conductive sheet (such as a copper sheet) and two small-size chips can be used to meet the performance requirements, and the overall cost is lower.

[0109] Further, in the embodiments of the dual-core parallel module diode packaging structure 400, 600, 700, the jumper may include an angled structure. Fig.16 , Fig.16 A schematic structural diagram of jumpers provided according to other embodiments of the present invention is shown.

[0110] Taking the jumper 420 in the dual-core parallel module diode packaging structure 400 as an example, Figure 8 and Fig.16As shown, the first metal conductive segment 421, the second metal conductive segment 422, and the thermistor 423 can form an angle structure, so that the first end of the jumper 420 is attached to the first surface of the first conductive sheet 431, and the second end of the jumper 420 is attached to the positive electrode surface of the first diode chip 411 and the second diode chip 412 on the second conductive sheet 432. Similarly, when the temperature of the diode chip rises to an abnormal level, the resistance value of the thermistor 423 of the PPTC material will continue to increase, and the circuit will be disconnected; and when the temperature drops and returns to the normal operating temperature, the resistance value of the thermistor 423 will also return to a very small level, which is equivalent to a wire.

[0111] So far, the diode dual-core packaging structure for photovoltaic modules provided by the present invention has been introduced. Further, on this basis, if the use scenario of the diode is a high voltage and high current scenario, the above connection methods can be combined according to specific use requirements to form a circuit in series and / or parallel.

[0112] Please see Fig.17 and 18 , Fig.17 A side view of a diode packaging structure for a multi-core series-connected photovoltaic module provided in some embodiments of the present invention is shown. Fig.18 for Fig.17 A top view of a diode packaging structure for a multi-core series-connected photovoltaic module is shown.

[0113] like Fig.17 and 18 As shown, a third diode chip 913 can be added to the diode packaging structure 900 for photovoltaic modules. The positive electrode of the first diode chip 911 located at both ends is connected to the first surface (e.g., upper surface) of the first conductive sheet 931, the negative electrode of the second diode chip 912 is connected to the first surface (e.g., upper surface) of the second conductive sheet 932, the third diode chip 913 is arranged between the first diode chip 911 and the second diode chip 912, and the positive electrode of the third diode chip 913 is connected to the negative electrode of the first diode chip 911 through the first jumper 921, and the negative electrode of the third diode chip 913 is connected to the positive electrode of the second diode chip 912 through the second jumper 922, thereby forming a loop structure in which three diode chips are connected in series.

[0114] Optionally, see Fig.19 and 20 , Fig.19 A side view of a diode packaging structure for a multi-core series-connected photovoltaic module provided in accordance with some other embodiments of the present invention is shown. Fig. 20 for Fig.19 A top view of a diode packaging structure for a multi-core series-connected photovoltaic module is shown.

[0115] like Fig.19 and 20 As shown, a third diode chip 913 and a third conductive sheet 933 can also be added to the diode packaging structure 900. The positive electrode of the first diode chip 911 at both ends is connected to the first surface (e.g., upper surface) of the first conductive sheet 931, and the negative electrode of the second diode chip 912 is connected to the first surface (e.g., upper surface) of the second conductive sheet 932. The third conductive sheet 933 is arranged in the middle of the first conductive sheet 931 and the second conductive sheet 932, and the negative electrode of the third diode chip 913 is connected to the first surface (e.g., upper surface) of the third conductive sheet 933, and the positive electrode of the third diode chip 913 is connected to the negative electrode of the first diode chip 911 through the first jumper 921. The positive electrode of the second diode chip 912 at the other end is connected to the third conductive sheet 933 in the middle through the second jumper 922, thereby forming a loop structure in which three diode chips are connected in series. Finally, each diode chip and each jumper package can be wrapped by the package body 940 for insulation protection.

[0116] Those skilled in the art will understand that the above-mentioned multi-core series connection scheme is only a non-limiting implementation method provided by the present invention, which is intended to clearly demonstrate the main concept of the present invention and provide a specific scheme that is convenient for the public to implement, rather than to limit the scope of protection of the present invention. Optionally, in other embodiments, those skilled in the art may also select multiple diode chips based on the concept of the present invention to form a series and / or parallel loop structure to meet the current and / or voltage requirements in actual work.

[0117] In summary, the present invention provides a diode packaging structure for photovoltaic modules, which can reduce the forward current of a single diode when the module diode is in a forward state, and can also reduce the reverse bias voltage of a single diode when the module diode is in a reverse bias state, so that the module diode has better current carrying capacity, load capacity and heat dissipation capacity, and also has an overheating protection function, which greatly improves the safety and reliability of the module diode working outdoors, and has a lower overall cost.

[0118] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A diode packaging structure for a photovoltaic module, characterized in that: include: at least one conductive sheet; A dual diode chip connected in parallel or in series, the dual diode chip comprising a first diode chip and a second diode chip, and the first diode chip and the second diode chip are arranged on the at least one conductive sheet; A jumper connecting the conductive sheet provided with the dual diode chip and an external electrode, wherein the jumper includes a thermistor for disconnecting a series circuit or a parallel circuit of the dual diode chip as the temperature increases; and A packaging body encapsulates the dual diode chip and the jumper to insulate and package them.

2. The diode packaging structure according to claim 1, characterized in that: The first diode chip and the second diode chip are jointly arranged on the first surface of the first conductive sheet. Among them, the cathodes of the first diode chip and the second diode chip are connected to the first surface of the first conductive sheet, and the anodes of the first diode chip and the second diode chip are connected to the jumper wire and connected to the external electrode via the jumper wire to form a parallel circuit of the dual diode chips.

3. The diode packaging structure according to claim 1, characterized in that: The first diode chip and the second diode chip are jointly arranged on a first conductive sheet, and the first diode chip and the second diode chip are respectively arranged at different relative positions on a first surface of the first conductive sheet and a second surface opposite to the first surface. Among them, the cathode of the first diode chip is connected to the first surface of the first conductive sheet, the cathode of the second diode chip is connected to the second surface of the first conductive sheet, the anodes of the first diode chip and the second diode chip are connected to the jumper wire, and are connected to the external electrode via the jumper wire to form a parallel circuit of the dual diode chips.

4. The diode packaging structure according to claim 1, characterized in that: The first diode chip and the second diode chip are respectively disposed on the first conductive sheet and the second conductive sheet. The positive electrode of the first diode chip is connected to the first surface of the first conductive sheet, the negative electrode of the second diode chip is connected to the first surface of the second conductive sheet, and the negative electrode of the first diode chip and the positive electrode of the second diode chip are connected through the jumper to form a series circuit of the dual diode chips.

5. The diode packaging structure according to claim 1, characterized in that: The first diode chip and the second diode chip are respectively arranged on the first conductive sheet and the second conductive sheet. Among them, the positive electrode of the first diode chip is connected to the second side of the first conductive sheet, the negative electrode of the first diode chip is connected to the first jumper and connected to the second side of the second conductive sheet via the first jumper, the negative electrode of the second diode chip is connected to the first side of the second conductive sheet, the positive electrode of the second diode chip is connected to the second jumper and connected to the first side of the first conductive sheet via the second jumper, so as to form a parallel circuit of the dual diode chips.

6. The diode packaging structure according to claim 4 or 5, characterized in that: Also includes: The third diode chip is disposed between the first conductive sheet and the second conductive sheet, and is connected to the first conductive sheet and the second conductive sheet via the jumper to form a series circuit and / or a parallel circuit of a plurality of diode chips.

7. The diode packaging structure according to any one of claims 1, characterized in that: The jumper includes a first metal conductive segment and a second metal conductive segment arranged at two ends, the first metal conductive segment and the second metal conductive segment are connected through the thermistor, the resistance value of the thermistor increases with the increase of temperature and decreases with the decrease of the temperature, so as to disconnect the series circuit or the parallel circuit at high temperature and connect the series circuit or the parallel circuit after the temperature drops.

8. The diode packaging structure as claimed in claim 7, characterized in that: The first metal conductive segment, the second metal conductive segment, and the thermistor form an angled structure so that one end of the jumper is attached to the surface of the conductive sheet, and the other end is attached to the surface of the diode chip on another conductive sheet.

9. The diode packaging structure according to claim 1, characterized in that: The packaging body is a packaging body made of polymer materials.

10. The diode packaging structure according to claim 9, characterized in that: The polymer material includes at least one of alicyclic epoxy resin, naphthalene-containing epoxy resin, dicyclopentadiene epoxy resin, dicyclopentadiene epoxy resin, fluorine-containing epoxy resin, silicon-containing epoxy resin, biphenyl epoxy resin, polyphenylene sulfide, and polyetheretherketone.

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