Three-dimensional heterogeneous integrated radio frequency microsystem

Abstract

The invention discloses a three-dimensional heterogeneous integrated radio frequency microsystem, which comprises a silicon-based package and an antenna, and realizes three-dimensional heterogeneous integration by using a semiconductor process. The silicon-based package comprises two layers of silicon adapter plates and a functional chip, the two layers of silicon adapter plates form an embedded cavity through wafer bonding, wafer bonding is achieved through a metal bonding layer, and interlayer vertical interconnection between the multiple layers of silicon adapter plates is achieved through TSVs; the functional chip is embedded in an embedded cavity formed by the two layers of silicon adapter plates, planar wiring conduction of the functional chip is realized through the RDL, and heat dissipation is realized on the back surface of the functional chip through the TSV on the lower layer of silicon adapter plate; the antenna comprises an antenna unit layer and a layer of silicon adapter plate, wafer bonding between the antenna unit layer and the layer of silicon adapter plate is achieved through a metal bonding layer, and the layer of silicon adapter plate is provided with a TSV to achieve interlayer conduction. And the silicon-based package and the antenna realize wafer bonding through the bonding salient points, so that vertical interconnection is realized. According to the invention, automatic production can be realized while high-density integration is realized, and the channel consistency is improved.

Description

Technical Field

[0001] The present invention belongs to the technical field of radio frequency microsystem packaging, and in particular relates to a three-dimensional heterogeneously integrated radio frequency microsystem. Background Art

[0002] Traditional microwave components are integrated using ceramic and dielectric substrates, and the size and weight of the active sub-array are still large. In addition, various microwave MMIC circuits (Monolithic Microwave Integrated Circuit), digital chips, connectors, and components are of various types and large in number, and the wiring is complex, which cannot meet the stringent requirements for volume, weight, and reliability under the conditions of limited system resources. As the functions of microwave components become increasingly complex, the number of integrated chips increases, and a large number of chips are assembled on multi-layer substrates through mounting and gold wire bonding. The process is long, there are many cumulative influencing factors, the consistency of microwave channels is poor, and the assembly and debugging workload is large, which is not conducive to mass production. Summary of the invention

[0003] The purpose of the present invention is to provide a multifunctional, highly integrated and highly consistent three-dimensional heterogeneous integrated radio frequency microsystem.

[0004] In order to achieve the above-mentioned object, one aspect of the present invention provides a three-dimensional heterogeneously integrated radio frequency microsystem, including a silicon-based package and an antenna, and using semiconductor technology to achieve three-dimensional heterogeneous integration;

[0005] The silicon-based package includes two layers of silicon adapter plates and a functional chip, the two layers of silicon adapter plates are bonded together to form a buried cavity, the wafer bonding is achieved through a metal bonding layer, and the multi-layer silicon adapter plates are vertically interconnected through TSV;

[0006] The functional chip is embedded in a buried cavity formed by two layers of silicon adapter boards. The functional chip is connected by planar wiring through RDL, and heat is dissipated on the back of the functional chip through TSV on the lower silicon adapter board of the two layers of silicon adapter boards.

[0007] The antenna includes an antenna unit layer and a silicon adapter plate. The antenna unit layer and the silicon adapter plate are wafer-bonded through a metal bonding layer to form an air cavity. TSV is provided on the silicon adapter plate to achieve interlayer conduction.

[0008] The silicon-based package and the antenna are wafer-bonded via bonding bumps, thereby achieving vertical interconnection.

[0009] Preferably, there are multiple silicon-based packages, and the multiple silicon-based packages are vertically interconnected, wherein the functional chip of the silicon-based package located at the bottom layer is a chip with a larger heat generation, and the functional chip of the silicon-based package located at the upper layer is a chip with a smaller heat generation; wafer bonding is achieved between the silicon-based packages through bonding bumps, and vertical interconnection between layers is achieved through TSV.

[0010] Preferably, the chip with a larger heat generation is a power amplifier, and the chip with a smaller heat generation is a multi-function chip, a low noise amplifier or a modulation chip.

[0011] The three-dimensional heterogeneously integrated radio frequency microsystem according to the above aspects of the present invention can realize automated production and improve channel consistency while achieving high-density integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings used in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0013] Figure 1 is a schematic structural diagram of a three-dimensional heterogeneous integrated radio frequency microsystem according to a first embodiment of the present invention;

[0014] Figure 2 It is a schematic structural diagram of a three-dimensional heterogeneously integrated radio frequency microsystem according to the second embodiment of the present invention.

[0015] Figure numerals: 101, first adapter board, 102, second adapter board, 103, antenna adapter board, 104, antenna unit layer, 105, TSV, 106, metal bonding layer, 107, first layer functional chip, 108, first bonding bump, 109, RDL, 203, third adapter board, 204, fourth adapter board, 210, second layer functional chip, 211, second bonding bump. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0017] An embodiment of the present invention provides a three-dimensional heterogeneous integrated radio frequency microsystem, such as Figure 1As shown, the three-dimensional heterogeneous integrated radio frequency microsystem of the first embodiment of the present invention includes two parts: a silicon-based package and an antenna, and three-dimensional heterogeneous integration is achieved using semiconductor technology.

[0018] The silicon-based package includes two layers of silicon adapter boards and a functional chip. In the first embodiment, the two layers of silicon adapter boards are a first adapter board 101 and a second adapter board 102 , and the functional chip is a first layer functional chip 107 .

[0019] The first adapter board 101 and the second adapter board 102 are bonded together to form a buried cavity. Wafer bonding is achieved through a metal bonding layer 106. Vertical interconnection between layers of multi-layer silicon adapter boards is achieved through TSV (Through Silicon Via) 105.

[0020] The first layer functional chip 107 is buried in the silicon adapter board cavity (buried cavity) formed by the first adapter board 101 and the second adapter board 102, and planar wiring conduction is achieved through the RDL (Redistribution Layer) 109, and heat dissipation is achieved on the back of the chip through the TSV105 on the first adapter board 101.

[0021] The antenna includes an antenna unit layer 104 and a silicon adapter board (referred to as an "antenna adapter board") 103. The antenna unit layer 104 and the antenna adapter board 103 are wafer-bonded through a metal bonding layer 106 to form an air cavity. TSV 105 is made on the antenna adapter board 103 to achieve interlayer conduction. The silicon-based package and the antenna are wafer-bonded through a first bonding bump 108 to achieve vertical interconnection.

[0022] like Figure 2 As shown, the three-dimensional heterogeneous integrated radio frequency microsystem of the second embodiment of the present invention includes two silicon-based packages and antennas, and three-dimensional heterogeneous integration is achieved by using semiconductor technology.

[0023] Each silicon-based package includes two layers of silicon adapter boards and a functional chip. One of the silicon-based packages is the same as the first embodiment, the two layers of silicon adapter boards are the first adapter board 101 and the second adapter board 102, and the functional chip is the first layer functional chip 107; the two layers of silicon adapter boards of the other silicon-based package are the third adapter board 203 and the fourth adapter board 204, and the functional chip is the second layer functional chip 210.

[0024] The first adapter board 101 and the second adapter board 102 are bonded together to form a buried cavity. Wafer bonding is achieved through a metal bonding layer 106 . Vertical interconnection between layers of multi-layer silicon adapter boards is achieved through TSV 105 .

[0025] The first-layer functional chip 107 is embedded in the silicon adapter cavity formed by the first adapter 101 and the second adapter 102. The first-layer functional chip 107 is connected by planar wiring through RDL 109, and heat is dissipated on the back of the chip through TSV 105 on the first adapter 101. The first-layer functional chip 107 is a chip with a large heat generation, generally a power amplifier, etc.

[0026] The third adapter plate 203 and the fourth adapter plate 204 are wafer-bonded to form a buried cavity, and wafer bonding is achieved through a metal bonding layer 106 . The multi-layer silicon adapter plates are vertically interconnected through TSV 105 .

[0027] The second layer functional chip 210 is embedded in the embedding cavity formed by the third adapter board 203 and the fourth adapter board 204. The second layer functional chip 210 is connected by planar wiring through RDL 109, and heat is dissipated on the back of the chip through TSV 105 on the third adapter board 203.

[0028] The second-layer functional chip 210 is a chip with relatively low heat generation, and is generally a multi-function chip, a low-noise amplifier, a modulation chip, and the like.

[0029] The two silicon-based packages are wafer-bonded via the second bonding bumps 211 , and vertically interconnected between layers via TSV 105 .

[0030] Similar to the first embodiment, the antenna includes an antenna unit layer 104 and an antenna adapter board 103. The antenna unit layer 104 and the antenna adapter board 103 are wafer-bonded through a metal bonding layer 106 to form an air cavity. TSV 105 is made on the antenna adapter board 103 to achieve interlayer conduction. The silicon-based package and the antenna are wafer-bonded through a first bonding bump 108 to achieve vertical interconnection.

[0031] According to the three-dimensional heterogeneous integrated radio frequency microsystem of the above-mentioned embodiment of the present invention, the functional chips are heterogeneously integrated by using silicon-based semiconductor technology, a silicon adapter plate is used to change the chip embedding method, RDL is used to improve the wiring density, TSV and wafer bonding are used to realize inter-layer interconnection, and antenna integration is completed in the system, giving full play to the characteristics of the heterogeneous integration approach, making the advantages of each integrated element complementary, and being able to realize multi-channel reception and transmission, frequency conversion, control, power supply, antenna and other multiple functional units packaged in one, thereby improving the system integration, and utilizing the batch manufacturing capability of semiconductor processing to realize automated production and improve channel consistency while realizing high-density integration.

[0032] The above description is only by way of illustration of certain exemplary embodiments of the present invention. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A three-dimensional heterogeneous integrated radio frequency microsystem, characterized in that: Including silicon-based packaging and antennas, using semiconductor technology to achieve three-dimensional heterogeneous integration; The silicon-based package includes two layers of silicon adapter plates and a functional chip, the two layers of silicon adapter plates are bonded together to form a buried cavity, the wafer bonding is achieved through a metal bonding layer, and the multi-layer silicon adapter plates are vertically interconnected through TSV; The functional chip is embedded in a buried cavity formed by two layers of silicon adapter boards. The functional chip is connected by planar wiring through RDL, and heat is dissipated on the back of the functional chip through TSV on the lower silicon adapter board of the two layers of silicon adapter boards. The antenna includes an antenna unit layer and a silicon adapter plate. The antenna unit layer and the silicon adapter plate are wafer-bonded through a metal bonding layer to form an air cavity. TSV is provided on the silicon adapter plate to achieve interlayer conduction. The silicon-based package and the antenna are wafer-bonded via bonding bumps, thereby achieving vertical interconnection.

2. The radio frequency microsystem according to claim 1, characterized in that: There are multiple silicon-based packages, which are vertically interconnected. The functional chip of the silicon-based package located at the bottom layer is a chip with a larger heat generation, and the functional chip of the silicon-based package located at the upper layer is a chip with a smaller heat generation. Wafer bonding is achieved between the silicon-based packages through bonding bumps, and vertical interconnection between layers is achieved through TSV.

3. The radio frequency microsystem according to claim 2, characterized in that: The chip with a larger heat generation is a power amplifier, and the chip with a smaller heat generation is a multi-function chip, a low noise amplifier or a modulation chip.

Images