Optical signal measuring apparatus, method of manufacturing same, and optical signal measuring method

Abstract

Optical devices and methods of making the same are described herein. In one embodiment, an apparatus is provided that includes a notch filter, an optical signal detector positioned adjacent to the notch filter, and a mirror positioned adjacent to the notch filter.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to an optical signal measuring device and a manufacturing method thereof, and an optical signal measuring method. Background Art

[0002] Sending and processing electrical signals (Electrical signaling and processing) is a technology of signal transmission and processing. In recent years, sending and processing optical signals (Optical signaling and processing) has been used in more and more applications, especially due to the use of optical fiber related applications for signal transmission.

[0003] The transmission and processing of optical signals are often combined with the transmission and processing of electrical signals to provide sophisticated applications. For example, optical fibers can be used for long-distance signal transmission, while electrical signals can be used for short-distance signal transmission and processing and control. Accordingly, devices integrating long-distance optical components and short-distance electrical components are formed for conversion between optical and electrical signals and processing of optical and electrical signals. Thus, a package can include an optical (photonic) die and an electronic die, the optical (photonic) die including an optical device, and the electronic die including an electronic device. Summary of the invention

[0004] Some embodiments of the present disclosure provide an optical signal measuring device, which includes a notch filter, an optical signal detector located adjacent to the notch filter, and a reflecting mirror located adjacent to the notch filter.

[0005] Some embodiments of the present disclosure provide a method for manufacturing an optical signal measuring device. The method includes forming a notch filter. The method includes positioning a reflective structure, wherein after forming the notch filter, the reflective structure is positioned near the notch filter. The method includes positioning an optical signal detector, wherein after forming the notch filter, the optical signal detector is positioned near the notch filter.

[0006] Some embodiments of the present disclosure provide a method for measuring an optical signal. The method includes reflecting an optical signal to a notch filter. The method includes selectively reflecting a first portion of the optical signal out of the notch filter. The method includes selectively transmitting a second portion of the optical signal out of the notch filter, wherein the first portion is different from the second portion. The method includes capturing the first portion of the optical signal using a photodetector. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The concepts of the disclosed embodiments are better understood with reference to the following detailed description and accompanying drawings. It should be noted that, according to standard practice in the industry, the various features in the drawings are not necessarily drawn to scale. In fact, the sizes of the various features may be arbitrarily enlarged or reduced to make the description clear.

[0008] Figure 1 Intermediate steps in forming an optical signal measurement device according to some embodiments are shown.

[0009] Figure 2 An optical signal measuring device including a notch filter, a reflective structure, and a light detector is shown according to some embodiments.

[0010] Figure 3 An optical signal device interfacing with an optical signal measuring apparatus is shown according to some embodiments.

[0011] Figure 4 An optical signal provided by an optical signal device according to some embodiments is shown entering an optical signal measuring apparatus.

[0012] Figure 5 Shown is a reflection spectrum of an optical signal measured by an optical signal measuring device according to some embodiments.

[0013] Description of reference numerals:

[0014] 101: First refractive index layer

[0015] 102: Carrier substrate

[0016] 103: Second refractive index layer

[0017] 106: First reflection structure

[0018] 200: Optical signal measurement equipment

[0019] 201: Defective structure

[0020] 206: Second reflection structure

[0021] 250: Notch filter

[0022] 275: Reflective support structure

[0023] 277: Reflector

[0024] 279: Transmission structure

[0025] 281: Optical signal capture characteristics

[0026] 283: Support structure

[0027] 290: Light (signal) detector

[0028] 300: Optical Devices

[0029] 301: Optical device structural components

[0030] 303: Optical device signal component

[0031] 400: Collimated beam

[0032] 410: Optical device signal

[0033] 425: Reflected Light

[0034] 450: Transmitted light

[0035] θ0: angle of incidence

[0036] θ1: first angle

[0037] θ2: Second angle

[0038] TH1: First thickness

[0039] TH2: Second thickness

[0040] TH3: Third thickness DETAILED DESCRIPTION

[0041] The following disclosure provides many different embodiments or examples to implement different features of the embodiments of the present disclosure. The following describes specific examples of components and configurations to simplify the description of the embodiments of the present disclosure. Of course, these specific examples are only for demonstration and are not intended to limit the embodiments of the present disclosure. For example, in the following description, it is mentioned that the first feature is formed on or above the second feature, which means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat reference symbols and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself limit the relationship between the various embodiments and / or configurations described.

[0042] Additionally, spatially relative terms, such as "below," "beneath," "lower," "above," "upper," and the like, may be used herein to describe the relationship of one element or feature to another element or feature(s) illustrated in the drawings. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. The device may be oriented differently (rotated 90 degrees or at other orientations) and the spatially relative terms used herein interpreted similarly.

[0043] Embodiments of the present disclosure will now be discussed with respect to certain embodiments, in which the optical properties of a target optical signal are measured by introducing a targeted optical signal into an optical measurement device that filters the target optical signal through various wavelengths. The wavelength of filtering is determined by controlling the material and structural parameters of an optical phase-based filter (e.g., a notch filter) and the sensitivity angle (sensitivity angle) of the optical phase-based filter introduced to determine. However, the embodiments presented herein are intended to be illustrative and are not intended to limit the embodiments to the precise description discussed. On the contrary, the embodiments discussed may be incorporated into a variety of implementations, and all such implementations are fully intended to be included within the scope of the embodiments.

[0044] Figure 1 The optical signal measuring device 200 (see Figure 2 ). In one embodiment, a carrier substrate 102 is provided. The carrier substrate 102 may be a semiconductor substrate, such as a bulk semiconductor, a semiconductor-on-insulator (SOI) substrate, etc., which may be doped (e.g., doped with a p-type or n-type dopant) or undoped. The carrier substrate 102 may be a wafer, such as a silicon wafer. In some embodiments, the semiconductor material of the carrier substrate 102 may include silicon, such as amorphous silicon (a-Si); germanium; compound semiconductors, including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; alloy semiconductors, including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; or combinations thereof. However, any suitable material may be used for the carrier substrate 102.

[0045] Figure 1 Also shown is a first reflective structure 106 formed on the carrier substrate 102. In one embodiment, the first reflective structure 106 includes a plurality of material layers, such as dielectric materials and semiconductor materials. In one embodiment, the plurality of material layers alternate between a plurality of first refractive index layers 101 and a plurality of second refractive index layers 103.

[0046] The first refractive index layer 101 may be formed on the carrier substrate 102. In one embodiment, the first refractive index layer 101 may include a dielectric material, such as silicon nitride, silicon oxide, silicon oxynitride, SiCN, etc. or a combination thereof. In another embodiment, the first refractive index layer 101 may include a semiconductor material, such as silicon, such as amorphous silicon (a-Si); germanium; a compound semiconductor, such as silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; an alloy semiconductor, such as SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; other similar materials or a combination thereof. However, any suitable material may be used for the first refractive index layer 101. In one embodiment, the first refractive index layer 101 may be deposited by a suitable deposition process, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), a combination thereof, etc., or may be grown by a suitable epitaxial process. However, the first refractive index layer 101 may be formed using any suitable deposition process or formation process.

[0047] In one embodiment, the material of the first refractive index layer 101 is selected to have a first refractive index. The first refractive index of the first refractive index layer 101 may be in the range of 1.3 to 3.7. In one embodiment, the first refractive index of the first refractive index layer 101 is a low refractive index. In addition, in one embodiment, each first refractive index layer 101 may be formed to have a first thickness TH1, and the first thickness TH1 is in the range of 80nm to 260nm. In one embodiment, the relationship between the first thickness TH1 and the first refractive index (RI1) and the wavelength (λ) is, for example, a design function TH1=(λ / 4) / (RI1)±20%. If the first refractive index layer 101 has a thickness outside the range of the first thickness TH1, the first refractive index layer 101 may not have the desired high reflection characteristics.

[0048] The second reflectivity layer 103 may be formed on the first refractive index layer 101. In one embodiment, the second reflectivity layer 103 is formed so that the multiple material layers of the first reflective structure 106 include alternating layers of the first refractive index layer 101 and the second reflectivity layer 103. In one embodiment, the second reflectivity layer 103 may include a semiconductor material, such as silicon, such as amorphous silicon (a-Si); germanium; a compound semiconductor, such as silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; an alloy semiconductor, such as SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; other similar materials or combinations thereof. In another embodiment, the second reflectivity layer 103 may include a dielectric material, such as silicon nitride, silicon oxide, silicon oxynitride, SiCN, etc. or combinations thereof. However, any suitable material may be used for the second reflectivity layer 103. In one embodiment, the second reflectivity layer 103 may be deposited by a suitable deposition process, such as CVD, PVD, ALD, a combination thereof, etc., or may be grown by a suitable epitaxial process. However, the second reflectivity layer 103 may be formed using any suitable deposition process or formation process.

[0049] In one embodiment, the material of the second reflectivity layer 103 is selected to have a second refractive index. The second refractive index of the second reflectivity layer 103 may be in the range of 1.3 to 3.7. In one embodiment, the second refractive index of the second reflectivity layer 103 is a high refractive index. In addition, in one embodiment, each second reflectivity layer 103 may be formed to a second thickness TH2. In one embodiment, the second thickness TH2 is in the range of 80nm to 260nm. In one embodiment, the relationship between the second thickness TH2 and the second refractive index (RI2) and the wavelength (λ) is, for example, a design function TH2=(λ / 4) / (RI2)±20%. If the second reflectivity layer 103 has a thickness outside the range of the second thickness TH2, the second reflectivity layer 103 may not have the desired high reflection characteristics.

[0050] In one embodiment, the first refractive index layer 101 is formed of a dielectric material, and the second reflective index layer 103 is formed of a semiconductor material. For example, in one embodiment, the first refractive index layer 101 is formed of SiO 2The first refractive index layer 101 and the second reflective index layer 103 are formed of a-Si. In one embodiment, the material difference between the first refractive index layer 101 and the second reflective index layer 103 produces a desired difference in optical properties between the first refractive index layer 101 and the second reflective index layer 103 (for example, the first refractive index layer 101 has a low refractive index and the second reflective index layer 103 has a high refractive index). In an embodiment where the first refractive index layer 101 and the second reflective index layer 103 are formed of different materials, the first thickness TH1 of the first refractive index layer 101 and the second thickness TH2 of the second reflective index layer 103 may be different and also contribute to the desired difference in optical properties between the first refractive index layer 101 and the second reflective index layer 103.

[0051] The above embodiments are examples, and the embodiments are not limited to the first refractive index layer 101 having a lower refractive index and the second reflective index layer 103 having a higher refractive index, or the first refractive index layer 101 having a higher refractive index and the second reflective index layer 103 having a lower refractive index. The first refractive index layer 101 and the second reflective index layer 103 may have any suitable refractive index.

[0052] In one embodiment, the alternating layers of the first refractive index layer 101 and the second reflective index layer 103 form a first reflective structure 106. The first reflective structure 106 may be referred to as a first distributed Bragg reflector (DBR) or a first DBR stack. In embodiments where the first refractive index layer 101 has a low refractive index and the second reflective index layer 103 has a high refractive index, constructive interference may occur at the boundary between the first refractive index layer 101 and the second reflective index layer 103. The alternation between the first refractive index layer 101 and the second reflective index layer 103 may have an effect on the optical signal (e.g., collimated light beam 400, not in the first reflective structure 106) directed to the first reflective structure 106. Figure 1 shown in Figure 4 ) produces high reflection.

[0053] Figure 2A cross-sectional view showing additional structures of the optical signal measuring device 200. In one embodiment, after forming the first reflective structure 106 on the carrier substrate 102, a defect structure 201 (also referred to as a defect layer) is formed on the top surface of the first reflective structure 106. After forming the defect structure 201, a second reflective structure 206 (also referred to as a second distributed Bragg (DBR) reflector or a second DBR stack) may be formed on the top surface of the defect structure 201. In one embodiment, the first reflective structure 106, the defect structure 201, and the second reflective structure 206 form a notch filter 250. The notch filter 250 reflects most of the optical signals of the collimated light beam 400 (e.g., the reflected light 425 that is not reflected in the optical signal 425). Figure 2 shown in Figure 4 ), but for a light signal of a specific wavelength and a specific incident angle, no reflection is performed (e.g., transmitted light 450 is not reflected in the Figure 2 shown in Figure 4 ).

[0054] In one embodiment, the defect structure 201 operates in the notch filter 250 by providing an optical phase that disrupts the high reflection (optical reflectivity) of an optical signal having a specific wavelength and a specific incident angle in the collimated light beam 400. The defect structure 201 can destroy the high reflection of a specific wavelength by having a defect refractive index. In one embodiment, the defect refractive index is in the range of 1.3 to 3.7. For a specific wavelength (e.g., transmitted light 450) in the optical signal (e.g., collimated light beam 400), the defect refractive index of the defect structure 201 is used to disrupt the high reflection by disrupting the optical phase at the boundary of the defect structure 201 in the notch filter 250.

[0055] In some embodiments, the defect structure 201 may be formed of a semiconductor material, such as silicon, such as amorphous silicon (a-Si); germanium; a compound semiconductor, such as silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide and / or indium antimonide; an alloy semiconductor, such as SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP and / or GaInAsP; other similar materials or combinations thereof. In some embodiments, the defect structure 201 may be formed of a dielectric material, such as silicon nitride, silicon oxide, silicon oxynitride, SiCN, etc. or combinations thereof. In addition, in some embodiments, the defect structure 201 may be formed of a single layer of material (e.g., a single layer of a-Si), or may be formed of a multilayer of material (e.g., two or more layers of silicon nitride).

[0056] In one embodiment, the defect refractive index is achieved by forming the defect structure 201 to a third thickness TH3. In one embodiment, the third thickness TH3 may be in the range of 50 nm to 2,000 nm. In one embodiment, the defect structure 201 may be formed of a material different from the material used to form the first refractive index layer 101 and the second refractive index layer 103. In one embodiment, the defect structure 201 and the first refractive index layer 101 and the second refractive index layer 103 have different thicknesses to produce a defect structure 201 having a defect refractive index that disturbs the optical phase of a specific wavelength within the optical signal.

[0057] In another embodiment, the defect structure 201 may be formed of a material different from the material used to form the first refractive index layer 101 and the second refractive index layer 103, and the third thickness TH3 of the defect structure 201 may be different from the first thickness TH1 of the first refractive index layer 101, and the first thickness TH1 of the first refractive index layer 101 may be different from the second thickness TH2 of the second refractive index layer 103. In this embodiment, the different materials of the defect structure 201 and the first refractive index layer 101 and the second refractive index layer 103 and the different thickness of the defect structure 201 produce a defect structure 201 with a defect refractive index, which disturbs the optical phase of a specific wavelength in the optical signal.

[0058] In another embodiment, the defect structure 201 may be formed of the same material as the material used to form the second refractive index layer 103. In this embodiment, the third thickness TH3 of the defect structure 201 is different from the second thickness TH2 of the second refractive index layer 103. In this embodiment, the different thicknesses between the defect structure 201 and the second refractive index layer 103 produce the defect structure 201 having a defect refractive index that disturbs the optical phase of a specific wavelength within the optical signal.

[0059] Figure 2 Also shown is a cross-sectional view of a reflective support structure 275 positioned to direct an optical signal (e.g., collimated light beam 400) toward an outer surface of notch filter 250. In one embodiment, reflective support structure 275 includes a reflector 277, a transmissive structure 279, an optical signal capture feature 281, and a support structure 283. Reflective support structure 275 may be configured to be coupled to optical device 300 (not shown). Figure 2 shown in Figure 3 ) interfaced with and receiving an optical signal from the optical device 300 (eg, the optical device signal 410, not shown in Figure 2 shown in Figure 4 ) and directing an optical signal (eg, collimated light beam 400 ) to an outer surface of notch filter 250 .

[0060] In one embodiment, the support structure 283 supports the reflector 277. The support structure 283 can be formed in a manner to hold the reflector 277 at a first angle θ1 with the outer surface of the notch filter 250. The first angle θ1 indicates the angle at which the optical signal (e.g., the collimated light beam 400) intersects the notch filter 250 after being redirected by the reflector 277 (hereinafter referred to as Figure 4 Further discussion). In some embodiments, the first angle θ1 can be in the range of 1 degree to 89 degrees.

[0061] In one embodiment, the transmissive structure 279 shares the same interface surface with the support structure 283 and the reflector 277. In one embodiment, the transmissive structure 279 can be formed of a semi-transparent material, such as a semiconductor material, such as silicon, germanium, silicon germanium, a combination of these, etc. The transmissive structure 279 can also be formed of a dielectric material such as silicon nitride. The transmissive structure 279 can also be formed of a semiconductor material, formed of air, or formed of glass. The transmissive structure 279 can be formed in such a way that it receives an optical signal (e.g., optical device signal 410) from the optical device 300, directs the optical signal (e.g., collimated light beam 400) to an interface with the reflector 277, and then allows the optical signal (e.g., collimated light beam 400) to pass through the transmissive structure 279 toward the outer surface of the notch filter 250 after being redirected by the reflector 277.

[0062] In one embodiment, a portion of the transmissive structure 279 is a light signal capture feature 281. The light signal capture feature 281 may be positioned on an outer surface of the transmissive structure 279 and configured to receive an optical device signal 410 from the optical device 300. In some embodiments, the light signal capture feature 281 is an integrated feature of the transmissive structure 279 and is formed as a part of the transmissive structure 279 during the formation of the transmissive structure 279. In one embodiment, the light signal capture feature 281 is a collimating feature, wherein the collimating feature is used to receive the optical device signal 410 from the optical device 300 and focus the optical device signal 410 into a collimated light beam 400, which is then directed to the notch filter 250. In one embodiment, the optical device signal 410 is a non-collimated signal generated by the optical device 300, which is collimated by the light signal capture feature 281 to generate the collimated light beam 400. In one embodiment, the light signal capture feature 281 may be a collimating lens formed by shaping the material of the transmissive structure 279 using a masking and etching process. However, it should be noted that other optical components may be utilized to serve as the light signal capturing features 281. Furthermore, the light signal capturing features 281 may be formed using any suitable processes and materials.

[0063] In some embodiments, the reflector 277 may be formed by electroplating a reflective material on an interface or by embedding the reflector 277 in a reflective support structure 275 at the interface. In one embodiment, the reflector 277 may be formed of a reflective material, such as copper, copper alloy, aluminum, aluminum alloy, gold, gold alloy, titanium, titanium alloy, a combination of these, and the like. In some embodiments, the reflective material may be formed of a combination of dielectric materials or semiconductor materials to form a highly reflective film stack, such as amorphous silicon, silicon, silicon oxide, silicon oxynitride, SiCN, and the like or a combination thereof. In embodiments where the reflector 277 is primarily used to increase the intensity of the optical signal of the collimated light beam 400, the reflector 277 may be located only on the surface of the transmissive structure 279. However, any suitable material or process may be used to form the reflector 277 of the reflective support structure 275. In some embodiments, the reflector 277 is formed to be positioned at a first angle θ1 so that the reflector 277 redirects the optical signal (e.g., the collimated light beam 400) to the outer surface of the notch filter 250. In one embodiment, the optical signal (eg, collimated light beam 400 ) has a specific incident angle with the notch filter 250 after being redirected toward the notch filter 250 by the reflector 277 .

[0064] In the embodiment where the light from the optical signal capturing feature 281 (e.g., the optical device signal 410) is incident on the reflective surface of the reflector 277 and the incident angle θ0 formed with the normal direction of the reflective surface of the reflector 277 is greater than the critical angle, total reflection occurs, and the reflective surface of the reflector 277 does not need to be a special reflector. In this embodiment, the surface of the transmissive structure 279 can be directly used for reflection to achieve a high reflection effect.

[0065] Figure 2Additionally shown is a light (signal) detector 290 as part of the light signal measurement device 200. In one embodiment, the light detector 290 is positioned to receive a light signal (e.g., reflected light 425) from the notch filter 250. The light detector 290 can capture the light signal for measurement. In one embodiment, the light detector 290 can be a camera for capturing the reflected light 425 when it is reflected back from the notch filter 250. In one embodiment, the light detector 290 can be one or more charge-coupled devices that can detect the reflected light 425 from the notch filter 250. In one embodiment, the light detector 290 detects light field distribution information of the reflected light 425, and the light field distribution information can be used to analyze information such as mode field diameter, divergence angle, etc. In addition, the light detector 290 can also include structures such as lenses or other optical elements that help separate the incoming reflected light 425 into different frequencies and direct the different frequencies to different charge-coupled devices. This separation allows multiple images to be taken simultaneously. In one embodiment, the light detector 290 measures various optical characteristics of the reflected light 425, such as light path angle, light intensity, light spot size, and light divergence angle.

[0066] Figure 3 A cross-sectional view of an optical device 300 interfacing with an optical signal measuring device 200 is shown. In an embodiment, the optical device 300 includes an optical device structural member 301 and an optical device signal member 303. The optical device signal member 303 can provide an optical device signal 410 to be measured by the optical signal measuring device 200. The optical device structural member 301 can provide support for the optical device signal member 303 and provide a structure for fixing the optical device 300 to the reflective support structure 275. The optical device structural member 301 can be constructed in a manner to align the optical device signal member 303 with the optical signal capturing feature 281 of the reflective support structure 275.

[0067] In one embodiment, the optical device 300 may include a fiber array unit (FAU) (not shown separately). In this embodiment, the optical device signal component 303 of the FAU may include one or more optical fibers (not shown separately). In one embodiment, each of the one or more optical fibers may include a core material (e.g., glass) surrounded by one or more cladding materials. Optionally, a surrounding cover material may be used to surround the outer cladding material to provide additional protection.

[0068] In addition, in an embodiment where the optical device 300 includes an optical fiber array unit, the optical device structural member 301 can be a ferrule (not shown separately) attached to a fiber bundle of multiple optical fibers. In one embodiment, the ferrule can be used to receive multiple optical fibers, align the optical fibers, and connect the optical fibers to the reflective support structure 275. In one embodiment, the ferrule can be a mechanical transfer (mechanical transfer, MT) ferrule made of a material that can be used to protect, support and align each optical fiber. However, any suitable material can be used. In one embodiment, the optical fiber can be inserted into an opening in the ferrule. Once inserted, a glue material such as epoxy resin, silicone, light-cured elastic polymer, a combination of these, etc. can be injected or otherwise placed into the opening in the ferrule to fix the optical fiber in the ferrule. In addition, the glue material can be hardened using a curing process such as light curing, heat curing, etc., and the optical fiber can be polished and cleaned so that the optical fiber in the ferrule is ready for optical connection to the optical signal measurement device 200. In this embodiment, the ferrule helps to fix the optical fiber to the reflective support structure 275 so that the optical signal provided by the optical fiber can be measured by the optical signal measurement device 200.

[0069] In another embodiment, the optical device 300 may be a photonic integrated circuit (PIC) device incorporated into, for example, an optical engine. In one embodiment, the PIC device includes an active layer (not shown separately) of optical components and an optical and electrical interconnect structure (not shown separately), and is bonded to an electronic integrated circuit (EIC) (not shown separately). In one embodiment, the electrical interconnect structure may include metal wires and vias for electrical connection between the active layer and the EIC, and electrical contacts for electrical connection to the outside of the PIC device. The optical interconnect structure may include optical components such as waveguides and couplers. In one embodiment, the EIC includes a single semiconductor die (e.g., a single memory die), a stacked device including multiple interconnected semiconductor substrates, or other functional circuit packages. In one embodiment, the active layer may include optical components such as optical waveguides, couplers, modulators, amplifiers, multiplexers, demultiplexers, photoelectric converters, electro-optical converters, lasers, combinations of these, and the like. In one embodiment, the PIC device generates an optical device signal 410 that is transmitted out of the PIC device through optical components (eg, edge couplers) within the PIC device to be captured by the optical signal capture feature 281 .

[0070] Figure 4A cross-sectional view showing the optical device 300 fixed to the optical signal measuring device 200 at the reflective support structure 275 and the optical device signal 410 provided by the optical device 300 to the optical signal measuring device 200. In addition, Figure 4 The path of the optical device signal 410 through the optical signal measuring apparatus 200 is shown, wherein along the path, the optical device signal 410 is collimated by the optical signal capturing feature 281 into a collimated light beam 400, and the collimated light beam 400 is separated into a reflected light 425 and a transmitted light 450 by the notch filter 250. In one embodiment, the optical signal capturing feature 281 captures the optical device signal 410 from the optical device 300, and the optical signal capturing feature 281 focuses the optical device signal 410 into the collimated light beam 400 and passes the collimated light beam 400 through the transmission structure 279, wherein the collimated light beam 400 intersects the reflective surface of the reflector 277. In one embodiment, the collimated light beam 400 is reflected by the reflective surface of the reflector 277 through the transmission structure 279 toward the outer surface of the notch filter 250. After the collimated light beam 400 passes through the reflective support structure 275 and is reflected by the reflector 277 toward the outer surface of the notch filter 250, the collimated light beam 400 intersects the notch filter 250 at a second angle θ2. In one embodiment, the second angle θ2 is in the range of 2 degrees to 178 degrees. In one embodiment, the second angle θ2 is the angle at which the collimated light beam 400 intersects the outer surface of the notch filter 250. In one embodiment, the reflector 277 is positioned to form a first angle θ1 with the outer surface of the notch filter 250, so that when the collimated light beam 400 is reflected from the reflector 277, the collimated light beam 400 intersects the notch filter 250 at the second angle θ2.

[0071] In one embodiment, the optical device signal 410 includes a signal having a first set of wavelengths, the first set of wavelengths being in the range of 1,000 nm to 1,700 nm. In addition, the collimated light beam 400 may also include a signal having the first set of wavelengths. The reflected light 425 may include a second set of wavelengths, the second set of wavelengths being in the range of 1,000 nm to 1,700 nm. The transmitted light 450 may include a third set of wavelengths, the third set of wavelengths being in the range of 1,000 nm to 1,700 nm.

[0072] In one embodiment, the notch filter 250 includes a defect structure 201 having a defect reflectivity, so that when the collimated light beam 400 interacts with the notch filter 250, the collimated light beam 400 is divided into a reflected light 425 and a transmitted light 450. In this embodiment, the defect reflectivity of the defect structure 201 disturbs the light phase of a specific wavelength of the collimated light beam 400 to generate the transmitted light 450. In one embodiment, through the design of the first reflective structure 106, the defect structure 201, and the second reflective structure 206, the light incident from the collimated light beam 400 to the notch filter 250 will be phase-matched, so that the reflected light 425 from each layer of the notch filter 250 is phase-matched, and most of the reflected light 425 is allowed to be reflected to the light detector 290. In some embodiments, under certain conditions (e.g., a specific wavelength or a specific incident angle of the second angle θ2), the addition of the defect structure 201 disrupts the phase matching characteristics of the reflected light 425, causing most of the light to pass through the notch filter 250, thereby reducing the light reflectivity under these wavelengths or specific second angle θ2 conditions.

[0073] Figure 5 The collimated light beam 400 is incident on the notch filter 250 at a different second angle θ2, and then the spectrum of the reflected light 425 received by the light detector 290 is used. In one embodiment, the collimated light beam 400 interacts with the notch filter 250 at the second angle (θ21, such as 11.6 degrees) of the first subset, and most of the transmitted light 450 includes a light signal with a wavelength of 1,307.7nm. In one embodiment, the collimated light beam 400 interacts with the notch filter 250 at the second angle (θ22, such as 11.8 degrees) of the second subset, and most of the transmitted light 450 includes a light signal with a wavelength of 1,307.9nm. In one embodiment, the collimated light beam 400 interacts with the notch filter 250 at the second angle (θ23, such as 12.0 degrees) of the third subset, and most of the transmitted light 450 includes a light signal with a wavelength of 1,308.1nm. In one embodiment, the collimated light beam 400 interacts with the notch filter 250 at a second angle (θ24, e.g., 12.2 degrees) of the fourth subset, and the majority of the transmitted light 450 includes an optical signal having a wavelength of 1,308.3 nm. In one embodiment, the collimated light beam 400 interacts with the notch filter 250 at a second angle (θ25, e.g., 12.4 degrees) of the fifth subset, and the majority of the transmitted light 450 includes an optical signal having a wavelength of 1,308.5 nm.

[0074] Embodiments discussed herein can achieve benefits. By controlling the material and structural properties of the defect structure 201, light of specific wavelengths can be filtered out from the collimated light beam 400 at a specific second angle θ2. By applying the collimated light beam 400 to the notch filter 250 at these specific angles, direct measurements can be made using the light detector 290. This method allows for a simple method to measure the optical path angle, light intensity, light spot size, and light divergence angle of the optical device 300 (e.g., FAU and PIC devices) without being limited by fiber dimensional tolerances, structural errors, camera resolution, etc. Directly measuring the optical signal (e.g., collimated light beam 400) allows for a more accurate observation of the quality and reliability of the optical signal.

[0075] According to one embodiment, an optical signal measuring device includes a notch filter, an optical signal detector positioned adjacent to the notch filter, and a reflector positioned adjacent to the notch filter. In one embodiment, the notch filter includes a first distributed Bragg reflector (DBR) stack located on a substrate, a defect structure located on the first distributed Bragg reflector stack, and a second distributed Bragg reflector (DBR) stack located on the defect structure. In one embodiment, the first distributed Bragg reflector stack includes a plurality of first layers, wherein at least one of the first layers is in physical contact with the substrate and at least one of the first layers is in physical contact with the defect structure; and a plurality of second layers, wherein each of the first layers is alternately arranged with each of the second layers. In one embodiment, each of the first layers includes a first material and each of the second layers includes a second material, wherein the second material is different from the first material. In one embodiment, the defect structure includes a second material. In one embodiment, each of the second layers has a first thickness and the defect structure has a second thickness, wherein the second thickness is different from the first thickness. In one embodiment, the defect structure includes a dielectric material or a semiconductor material.

[0076] According to one embodiment, a method for manufacturing an optical signal measuring device includes: forming a notch filter; positioning a reflective structure, wherein after forming the notch filter, the reflective structure is positioned near the notch filter; and positioning an optical signal detector, wherein after forming the notch filter, the optical signal detector is positioned near the notch filter. In one embodiment, forming the notch filter includes forming a first distributed Bragg reflector (DBR) on a substrate; forming a defect structure on the first distributed Bragg reflector; and forming a second distributed Bragg reflector (DBR) on the defect structure. In one embodiment, forming the first distributed Bragg reflector includes forming a first layer on the substrate, the first layer including a first material; and forming a second layer on the first layer, the second layer including a second material, wherein the first material is different from the second material. In one embodiment, the first material is a dielectric material or a semiconductor material, and the second material is a dielectric material or a semiconductor material. In one embodiment, forming the second layer includes forming the second layer to a first thickness and forming the defect layer includes forming the defect layer to a second thickness, wherein the second thickness is different from the first thickness. In one embodiment, the defect layer includes the second material. In one embodiment, the second material is amorphous silicon.

[0077] According to one embodiment, a method for measuring an optical signal includes: reflecting an optical signal to a notch filter; selectively reflecting a first portion of the optical signal out of the notch filter; selectively transmitting a second portion of the optical signal out of the notch filter, wherein the first portion is different from the second portion; and capturing the first portion of the optical signal using a photodetector. In one embodiment, the optical signal is provided by a photonic integrated circuit device. In one embodiment, the optical signal is provided by an optical fiber array unit. In one embodiment, the method further includes collimating the optical signal before reflecting the optical signal. In one embodiment, the notch filter includes a first distributed Bragg reflector, a second distributed Bragg reflector, and a defect layer, wherein the defect layer is located between the first distributed Bragg reflector and the second distributed Bragg reflector. In one embodiment, capturing the first portion of the optical signal includes using a camera.

[0078] The features of many embodiments are summarized above so that those skilled in the art to which the present disclosure belongs can better understand various aspects of the present disclosure. Those skilled in the art to which the present disclosure belongs should understand that other processes and structures can be easily designed or changed based on the embodiments of the present disclosure to achieve the same purpose and / or achieve the same advantages as the embodiments introduced herein. Those skilled in the art to which the present disclosure belongs should also understand that these equivalent structures do not deviate from the concept and scope of the present disclosure. Various changes, substitutions and modifications may be made to the embodiments of the present disclosure without departing from the concept and scope of the appended claims.

Claims

1. An optical signal measuring device, comprising: a notch filter; an optical signal detector positioned adjacent to the notch filter; as well as A reflector is positioned adjacent to the notch filter.

2. The optical signal measuring device as claimed in claim 1, wherein the notch filter comprises: a first distributed Bragg reflector stack disposed on a substrate; a defect structure located on the first DBR stack; as well as A second DBR stack is located on the defect structure.

3. The optical signal measurement device as claimed in claim 2, wherein the first distributed Bragg reflector stack comprises: a plurality of first layers, wherein at least one of the first layers is in physical contact with the substrate and at least one of the first layers is in physical contact with the defect structure; as well as A plurality of second layers, wherein each of the first layers is alternately arranged with each of the second layers. 4 . The optical signal measuring device as claimed in claim 3 , wherein each of the first layers comprises a first material and each of the second layers comprises a second material, wherein the second material is different from the first material. 5 . The optical signal measuring device as claimed in claim 4 , wherein each of the second layers has a first thickness and the defect structure has a second thickness, wherein the second thickness is different from the first thickness.

6. A method for manufacturing an optical signal measuring device, comprising: forming a notch filter; positioning a reflective structure, wherein after forming the notch filter, the reflective structure is positioned adjacent to the notch filter; as well as An optical signal detector is positioned, wherein the optical signal detector is positioned adjacent to the notch filter after the notch filter is formed.

7. The method for manufacturing an optical signal measuring device as claimed in claim 6, wherein forming the notch filter comprises: forming a first distributed Bragg reflector on a substrate; forming a defect layer on the first DBR; as well as A second distributed Bragg reflector is formed on the defective layer.

8. The method for manufacturing an optical signal measuring device as claimed in claim 7, wherein forming the first distributed Bragg reflector comprises: forming a first layer on the substrate, the first layer comprising a first material; as well as A second layer is formed on the first layer, the second layer comprising a second material, wherein the first material is different from the second material.

9. The method for manufacturing an optical signal measuring device as claimed in claim 8, wherein forming the second layer comprises forming the second layer to a first thickness and forming the defect layer comprises forming the defect layer to a second thickness, wherein the second thickness is different from the first thickness.

10. A method for measuring an optical signal, comprising: reflecting an optical signal to a notch filter; selectively reflecting a first portion of the optical signal out of the notch filter; selectively transmitting a second portion of the optical signal out of the notch filter, wherein the first portion is different from the second portion; as well as The first portion of the optical signal is captured using a photodetector.

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