Heterojunction type self-powered infrared photoelectric detector based on tellurium-based oxide and preparation method thereof

Abstract

The invention provides a heterojunction type self-powered infrared photoelectric detector based on tellurium-based oxide and a preparation method thereof, the photoelectric detector is a PN junction device with a vertical structure, and the photoelectric detector comprises an N-type semiconductor material, an N-type semiconductor material contact electrode, a P-type semiconductor material and a P-type semiconductor material contact electrode from bottom to top; the N-type semiconductor material is one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide and indium gallium arsenide, the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium and chromium, the P-type semiconductor material is an amorphous tellurium oxide film, and the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium and nickel. The heterojunction type self-powered infrared photoelectric detector based on the tellurium-based oxide has the advantages of high sensitivity, high responsivity, high response speed and large-area uniformity, the process cost is extremely low, and the heterojunction type self-powered infrared photoelectric detector is easy to implement.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor photoelectric detectors, and in particular to a tellurium-based oxide-based heterojunction self-powered infrared photoelectric detector and a preparation method thereof. Background Art

[0002] Infrared photodetectors have important applications in modern science and technology and the military field, and are widely used in night vision, temperature monitoring, environmental monitoring and other fields. Traditional infrared detectors mainly rely on precious metal materials, such as mercury cadmium telluride alloy (HgCdTe), indium antimonide (InSb) and indium gallium arsenide (InGaAs). These materials are not only expensive, some of them are highly toxic, and the preparation process is complicated, which limits their large-scale application. At the same time, the power consumption and heat dissipation of existing infrared detectors also limit their application in portable devices. With the rapid development of emerging fields such as driverless cars, aerospace industry and flexible wearable electronic devices, the demand for infrared detectors with high responsiveness, low power consumption, ultra-fast response speed and large-area uniformity is becoming increasingly urgent. Summary of the invention

[0003] In response to the above problems, the present invention provides a tellurium-based oxide heterojunction self-powered infrared photodetector and a preparation method thereof. A PN junction is formed by a P-type tellurium-based oxide semiconductor film and an N-type semiconductor. By utilizing the photovoltaic effect of the PN junction, the detector realizes self-powered operation and has high responsiveness, low dark current and a faster response speed.

[0004] The present invention provides a tellurium-based oxide-based heterojunction self-powered infrared photodetector, wherein the photodetector is a vertically structured PN junction device, and comprises, from bottom to top, an N-type semiconductor material, an N-type semiconductor material contact electrode, a P-type semiconductor material and a P-type semiconductor material contact electrode, wherein the N-type semiconductor material is one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic, the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, the P-type semiconductor material is an amorphous tellurium oxide thin film, and the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel.

[0005] The present invention also provides a method for preparing the above-mentioned tellurium-based oxide heterojunction self-powered infrared photodetector, the method comprising the following steps:

[0006] Step S1: using N-type Si as a substrate and an N-type semiconductor material for a PN junction, firstly using a hydrofluoric acid solution to clean and remove a thin self-oxidation layer on the Si surface, the N-type semiconductor material comprising one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic;

[0007] Step S2: depositing an N-type semiconductor material contact electrode on the N-type Si surface processed in step S1 and forming a pattern, wherein the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, and the thickness of the N-type semiconductor material contact electrode is 10nm-200nm;

[0008] Step S3: depositing a layer of amorphous tellurium oxide thin film on the sample processed in step S2, used as a P-type material in a PN junction, wherein the thickness of the amorphous tellurium oxide thin film is 10nm-300nm, and annealing the sample obtained after deposition in an air environment;

[0009] Step S4: depositing a P-type semiconductor material contact electrode on the sample obtained in step S3 and forming a pattern, wherein the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel, and the thickness of the P-type semiconductor material contact electrode is 10nm-200nm.

[0010] Further, deposition methods include electron beam evaporation, thermal evaporation and magnetron sputtering.

[0011] Furthermore, the annealing temperature is 25° C.-400° C., and the annealing time is 0.5 hour-24 hours.

[0012] The present invention has the following beneficial technical effects:

[0013] The present invention adopts an amorphous tellurium oxide thin film as a P-type semiconductor material to form a PN junction with an N-type semiconductor, and utilizes the photovoltaic effect of the PN junction to achieve self-powered operation of the infrared photodetector, and enables the detector to have high responsiveness, low dark current and a faster response speed, which is suitable for low-power application scenarios. At the same time, a simple, fast and extremely low-cost preparation method of a tellurium-based oxide heterojunction self-powered infrared photodetector is provided. The amorphous oxide material is used, so that the device can be prepared under a low-temperature process, has the advantage of being compatible with a flexible substrate, is suitable for the integration of large-area flexible electronic devices, and can achieve large-area uniformity of the device. In addition, the environmental friendliness and high stability of the oxide material enable the photodetector to have excellent long-term reliability and environmental protection characteristics, which is in line with the development trend of green technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0015] Figure 1A schematic structural diagram of a tellurium-based oxide-based heterojunction self-powered infrared photodetector provided in an embodiment of the present invention; wherein 1-N-type semiconductor material, 2-N-type semiconductor material contact electrode, 3-P-type semiconductor material, 4-P-type semiconductor material contact electrode;

[0016] Figure 2 A current-voltage curve diagram of the tellurium-based oxide heterojunction self-powered infrared photodetector provided in Example 1 of the present invention under light and in darkness;

[0017] Figure 3 This is a dynamic light response curve diagram of the tellurium-based oxide heterojunction self-powered infrared photodetector provided in Example 1 of the present invention when the bias voltage is 0V. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] The present invention provides a tellurium-based oxide-based heterojunction self-powered infrared photodetector and a preparation method thereof. By using an amorphous tellurium oxide thin film as a P-type semiconductor material to form a PN junction with an N-type semiconductor, and utilizing the photovoltaic effect of the PN junction, the self-powered operation of the infrared photodetector is achieved, and the detector has high responsiveness, low dark current and a relatively fast response speed.

[0020] like Figure 1 As shown, a tellurium-based oxide-based heterojunction self-powered infrared photodetector includes, from bottom to top: an N-type semiconductor material, an N-type semiconductor material contact electrode, a P-type semiconductor material and a P-type semiconductor material contact electrode, wherein the N-type semiconductor material is one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic, the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, the P-type semiconductor material is an amorphous tellurium oxide film, and the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel.

[0021] The present invention also provides a method for preparing the above-mentioned tellurium-based oxide heterojunction self-powered infrared photodetector, the method comprising the following steps:

[0022] Step S1: using N-type Si as a substrate and an N-type semiconductor material for a PN junction, firstly using a hydrofluoric acid solution to clean and remove a thin self-oxidation layer on the Si surface, wherein the N-type semiconductor material includes but is not limited to one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic;

[0023] Step S2: depositing an N-type semiconductor material contact electrode on the N-type Si surface processed in step S1 and forming a pattern, wherein the deposition method includes electron beam evaporation, thermal evaporation, and magnetron sputtering, wherein the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, and the thickness of the N-type semiconductor material contact electrode is 10 nm-200 nm;

[0024] Step S3: depositing a layer of amorphous tellurium oxide thin film on the sample processed in step S2, used as a P-type material in the PN junction, the thickness of the amorphous tellurium oxide thin film is 10nm-300nm, the deposition method includes thermal evaporation, magnetron sputtering, electron beam evaporation, and annealing the sample obtained after deposition in an air environment, the annealing temperature is 25°C-400°C, and the annealing time is 0.5 hour-24 hours;

[0025] Step S4: depositing a P-type semiconductor material contact electrode on the sample obtained in step S3 and forming a pattern, wherein the deposition method includes electron beam evaporation, thermal evaporation, and magnetron sputtering, wherein the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel, and the thickness of the P-type semiconductor material contact electrode is 10nm-200nm.

[0026] In order to present and illustrate the specific technical effects, the present invention provides the following specific embodiments:

[0027] Example 1

[0028] A single-side polished N-type conductive silicon substrate is placed in a 30% concentration hydrofluoric acid solution to clean and remove the thin self-oxidation layer on the surface, and then a 50nm thick aluminum electrode is grown on the substrate by thermal evaporation as a contact electrode for the N-type silicon and patterned, and then a 100nm thick amorphous P-type tellurium oxide film is grown on the above sample by thermal evaporation and patterned, and then the sample is annealed at 400°C in air for 0.5 hours, and finally a 50nm thick nickel electrode is grown on the sample by thermal evaporation as a contact electrode for the amorphous P-type material and patterned, thereby obtaining a self-powered, fast-responding amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector.

[0029] Example 2

[0030] A single-side polished N-type conductive germanium substrate is placed in a 30% concentration hydrofluoric acid solution to clean and remove the thin self-oxidation layer on the surface, and then an electron beam evaporation method is used to grow a 10nm thick aluminum electrode on the substrate as a contact electrode of the N-type germanium and form a pattern, and then a 10nm thick amorphous P-type tellurium oxide film is grown on the above sample by thermal evaporation and patterned, and then the sample is annealed at 25°C in air for 24 hours, and finally a 10nm thick nickel electrode is grown on the above sample by magnetron sputtering as a contact electrode of the amorphous P-type material and patterned, thereby obtaining a self-powered, fast-responding amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector.

[0031] Example 3

[0032] A single-side polished N-type conductive indium gallium zinc substrate is placed in a 30% concentration hydrofluoric acid solution to clean and remove the thin self-oxidation layer on the surface, and then a 200nm thick copper electrode is grown on the substrate by thermal evaporation as a contact electrode of the N-type indium gallium zinc and patterned, and then a 300nm thick amorphous P-type tellurium oxide film is grown on the above sample by magnetron sputtering and patterned, and then the sample is annealed at 100°C in air for 15 hours, and finally a 200nm thick titanium electrode is grown on the sample by thermal evaporation as a contact electrode of the amorphous P-type material and patterned, thereby obtaining a self-powered, fast-responding amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector.

[0033] Example 4

[0034] A single-side polished N-type conductive indium gallium zinc substrate is placed in a 30% concentration hydrofluoric acid solution to clean and remove the thin self-oxidation layer on the surface, and then a 100nm thick copper electrode is grown on the substrate by thermal evaporation as a contact electrode of the N-type indium gallium zinc and patterned, and then a 150nm thick amorphous P-type tellurium oxide film is grown on the above sample by magnetron sputtering and patterned, and then the sample is annealed at 200°C in air for 10 hours, and finally a 100nm thick titanium electrode is grown on the sample by thermal evaporation as a contact electrode of the amorphous P-type material and patterned, thereby obtaining a self-powered, fast-responding amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector.

[0035] Figure 2 The current-voltage curves of the amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector prepared in Example 1 under light and in the dark are shown. It can be seen from the figure that the PN junction successfully achieves rectification, and the switching ratio can reach 10 5 Under infrared light irradiation, the reverse current of the device increased significantly and exhibited an obvious photovoltaic effect, demonstrating its self-powered infrared detection capability.

[0036] Figure 3 The figure shows the dynamic light response curve of the amorphous tellurium oxide / silicon PN junction infrared photodetector prepared in Example 1 at a bias voltage of 0V. The device shows a significant photocurrent response under pulse irradiation of an infrared light source, and the response time is extremely short.

[0037] Depend on Figure 2 and Figure 3 It can be seen that the present invention successfully realizes the amorphous tellurium oxide / silicon PN junction self-powered infrared photodetector, and realizes rapid and efficient detection of infrared light in the self-powered mode.

[0038] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A tellurium-based oxide heterojunction self-powered infrared photodetector, characterized in that: The photodetector is a PN junction device with a vertical structure, and includes, from bottom to top: an N-type semiconductor material, an N-type semiconductor material contact electrode, a P-type semiconductor material and a P-type semiconductor material contact electrode; wherein the N-type semiconductor material is one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic, the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, the P-type semiconductor material is an amorphous tellurium oxide film, and the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel.

2. A method for preparing a tellurium-based oxide heterojunction self-powered infrared photodetector according to claim 1, characterized in that: The method comprises the following steps: Step S1: using N-type Si as a substrate and an N-type semiconductor material for a PN junction, firstly using a hydrofluoric acid solution to clean and remove a thin self-oxidation layer on the Si surface, the N-type semiconductor material comprising one or more of indium, gallium, zinc oxide, silicon, germanium, gallium arsenide, and indium gallium arsenic; Step S2: depositing an N-type semiconductor material contact electrode on the N-type Si surface processed in step S1 and forming a pattern, wherein the N-type semiconductor material contact electrode is one or more of titanium, aluminum, copper, silver, indium, and chromium, and the thickness of the N-type semiconductor material contact electrode is 10nm-200nm; Step S3: depositing a layer of amorphous tellurium oxide thin film on the sample processed in step S2, used as a P-type material in a PN junction, wherein the thickness of the amorphous tellurium oxide thin film is 10nm-300nm, and annealing the sample obtained after deposition in an air environment; Step S4: depositing a P-type semiconductor material contact electrode on the sample obtained in step S3 and forming a pattern, wherein the P-type semiconductor material contact electrode is one or more of titanium, gold, copper, platinum, palladium, and nickel, and the thickness of the P-type semiconductor material contact electrode is 10nm-200nm.

3. The preparation method according to claim 2, characterized in that: Deposition methods include electron beam evaporation, thermal evaporation, and magnetron sputtering.

4. The preparation method according to claim 2, characterized in that: The annealing temperature is 25°C-400°C, and the annealing time is 0.5 hour-24 hours.

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