Production method of battery piece

Abstract

The invention relates to a production method of a battery piece. The production method comprises the following steps: printing a grid line electrode on the battery piece; sintering the grid line electrode; cutting the battery piece; forming a passivation layer on the cutting edge of the battery piece; and applying voltage and laser to the battery piece so as to anneal the grid line electrode and the passivation layer. According to the application, the voltage and the laser are applied to the battery piece to anneal the grid line electrode, so that the contact resistance between the grid line electrode and the battery piece can be reduced; and the passivation layer is annealed, so that the passivation degree of the passivation layer on the cutting edge can be improved, and the photoelectric conversion efficiency of the produced battery piece is further improved. According to the method, after the passivation layer is formed on the cutting edge of the battery piece, the voltage and the laser are applied to the battery piece, a grid line electrode and the passivation layer can be annealed at the same time, the time for repeatedly arranging equipment for applying the voltage and the laser is saved, the passivation degree of the passivation layer is improved, the production time of the battery piece is shortened, and the production efficiency of the battery piece is improved. And the production efficiency of the battery piece is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a method for producing a solar cell. Background Art

[0002] Solar cells can directly convert solar radiation energy into electrical energy, mainly based on the photovoltaic effect of crystalline silicon, that is, when the photons of sunlight are absorbed by semiconductor crystalline silicon, electron-hole pairs are generated. When these electron-hole pairs reach the pn junction composed of p-type crystalline silicon and n-type crystalline silicon, they are separated to both sides of the pn junction by the junction electric field. When an external load is connected, photocurrent is formed and electrical energy is output.

[0003] In recent years, with the rise of module technologies such as half-cut modules and shingled modules, the battery cells need to be cut when making modules. After cutting, there are defects and damage on the edges of the battery cells, which leads to increased recombination of solar cells at the cut edges, affecting the photoelectric conversion efficiency of solar cells.

[0004] The prior art reduces the damage caused by cell cutting by depositing a passivation film on the cut edge of the cell, but the passivation effect of the deposited passivation film is limited, and the photoelectric conversion efficiency of the solar cell is still low. Summary of the invention

[0005] The present application provides a method for producing a battery cell, which is used to improve the photoelectric conversion efficiency of the battery cell.

[0006] The present invention provides a method for producing a battery cell, comprising:

[0007] Printing grid line electrodes on the battery cell;

[0008] Sintering the gate line electrode;

[0009] cutting the battery sheet;

[0010] forming a passivation layer on the cut edge of the cell;

[0011] Voltage and laser are applied to the cell to anneal the gate electrode and the passivation layer.

[0012] In a possible design, in the step of forming a passivation layer on the cut edge of the battery cell, the passivation layer completely covers the cut surface of the battery cell and extends to a surface adjacent to the cut surface of the battery cell.

[0013] In a possible design, a length L of the passivation layer extending on a surface adjacent to a cut surface of the battery cell satisfies: 1 mm ≤ L ≤ 3 mm.

[0014] In a possible design, the thickness d of the passivation layer satisfies: 45 nm≤d≤60 nm.

[0015] In a possible design, the step of applying voltage and laser to the cell to anneal the gate electrode and the passivation layer includes:

[0016] The gate line electrode and the passivation layer are irradiated with laser light while a voltage is applied to the gate line electrode.

[0017] In a possible design, in the step: when irradiating the gate line electrode with laser, the multiple light spots of the laser are arranged along the length direction of the gate line electrode, and the multiple light spots of the laser are tangent to or intersect with the gate line electrode.

[0018] In one possible design, in the step: when irradiating the passivation layer with a laser, the multiple spots of the laser are arranged along the length direction of the passivation layer, and the multiple spots of the laser are tangent to or intersect with a portion of the passivation layer extending to a surface adjacent to a cut surface of the cell.

[0019] In a possible design, in the step of irradiating the gate line electrode and the passivation layer with a laser, the power P of the laser satisfies: 2600W≤P≤2800W.

[0020] In a possible design, the step of applying a voltage to the gate line electrode includes bringing a probe for applying a voltage into contact with the gate line electrode.

[0021] In a possible design, in step: when applying a voltage to the gate line electrode, the applied voltage U satisfies: 15V≤U≤20V.

[0022] In the present application, by applying voltage and laser to the cell to anneal the gate electrode, mutual diffusion of metal and silicon between the gate electrode and the cell can be induced, the degree of ohmic contact between the gate electrode and the cell is improved, and the contact resistance between the gate electrode and the cell is reduced. At the same time, by applying voltage and laser to the cell to anneal the passivation layer, the degree of passivation of the passivation layer to the cutting edge can be improved, further reducing the recombination of the produced cell at the cutting edge, and improving the photoelectric conversion efficiency of the produced cell.

[0023] In addition, in the prior art, voltage and laser are generally applied to the cell after sintering the gate electrode and before cutting the cell to improve the ohmic contact between the gate electrode and the cell. This solution can anneal the gate electrode and the passivation layer at the same time by applying voltage and laser to the cell after forming a passivation layer at the cut edge of the cell, saving the time of repeatedly arranging the equipment for applying voltage and laser, thereby improving the passivation degree of the passivation layer and reducing the production time of the cell, thereby improving the efficiency of the cell production.

[0024] It should be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A flow chart of the production method of the battery cell provided in this application;

[0026] Figure 2 A schematic diagram of the structure of a battery cell produced by the battery cell production method provided in this application;

[0027] Figure 3 is a schematic diagram of irradiating the gate line electrode with laser while applying voltage to the gate line electrode;

[0028] Figure 4 Schematic diagram of irradiating the passivation layer with laser while applying voltage to the gate electrode.

[0029] Reference numerals:

[0030] 1-Battery cell;

[0031] 11-gate line electrode;

[0032] 111- main grid;

[0033] 112-auxiliary grid;

[0034] 12- passivation layer;

[0035] 2-probe;

[0036] 3-Laser emitting device.

[0037] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application. DETAILED DESCRIPTION

[0038] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0039] It should be clear that the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0040] The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates other meanings.

[0041] It should be understood that the term "and / or" used in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0042] It should be noted that the directional words such as "upper", "lower", "left", and "right" described in the embodiments of the present application are described at the angles shown in the accompanying drawings and should not be understood as limiting the embodiments of the present application. In addition, in the context, it is also necessary to understand that when it is mentioned that an element is connected to another element "upper" or "lower", it can not only be directly connected to another element "upper" or "lower", but also indirectly connected to another element "upper" or "lower" through an intermediate element.

[0043] The present application embodiment provides a method for producing a battery cell 1, such as Figure 1 As shown, the production method of the battery cell 1 includes:

[0044] S1: Printing gate line electrodes 11 on the battery cell 1 .

[0045] In this step, the gate electrode 11 is printed on the cell 1 by screen printing, which is a process of printing the slurry on the surface to be printed by squeezing the screen elastically with a scraper bar. The cell 1 can supply power to the outside through the gate electrode 11.

[0046] S2: Sintering the gate line electrode 11 .

[0047] In this step, the slurry on the cell 1 can be dried by sintering, and the organic components in the slurry can be burned out, so that the gate electrode 11 forms an ohmic contact with the cell 1 .

[0048] S3: Cutting the battery cell 1.

[0049] In this step, cutting of the battery cell 1 can be achieved by mechanical cutting, laser cutting, etc., but there are defects and damages on the edges after cutting, which leads to increased recombination of the produced battery cell 1 and reduced photoelectric conversion efficiency.

[0050] S4: forming a passivation layer 12 on the cut edge of the battery cell 1 .

[0051] In this step, the passivation layer 12 can reduce defects and damage on the cutting edge of the cell 1, reduce the recombination of the produced cell 1, and improve the photoelectric conversion efficiency of the produced cell 1. However, the deposited passivation layer 12 still has the problem of incomplete passivation and limited improvement in photoelectric conversion efficiency. The material of the passivation layer 12 can be at least one or more of silicon oxide, aluminum oxide, nickel oxide, and zinc oxide.

[0052] S5 : applying voltage and laser to the cell 1 to anneal the gate electrode 11 and the passivation layer 12 .

[0053] In this step, by applying voltage and laser to the cell 1 to anneal the gate electrode 11, mutual diffusion of metal and silicon between the gate electrode 11 and the cell 1 can be induced, the degree of ohmic contact between the gate electrode 11 and the cell 1 can be improved, and the contact resistance between the gate electrode 11 and the cell 1 can be reduced. At the same time, by applying voltage and laser to the cell 1 to anneal the passivation layer 12, the degree of passivation of the passivation layer 12 to the cut edge can be improved, the damage of the cell 1 at the cut edge can be reduced, and then the recombination of the produced cell 1 at the cut edge can be reduced, and the photoelectric conversion efficiency of the produced cell 1 can be improved.

[0054] In addition, in the prior art, voltage and laser are generally applied to the cell 1 after sintering the gate electrode 11 in step S2 and before cutting the cell 1 in step S3 to improve the ohmic contact between the gate electrode 11 and the cell 1. In this solution, voltage and laser are applied to the cell 1 after forming the passivation layer 12 at the cut edge of the cell 1 in step S4, so that the gate electrode 11 and the passivation layer 12 can be annealed at the same time, saving the time of repeatedly arranging the equipment for applying voltage and laser, so as to reduce the production time of the cell 1 while improving the passivation degree of the passivation layer 12, thereby improving the production efficiency of the cell 1.

[0055] In a specific embodiment, Figure 2 and Figure 3 As shown, in the step of forming the passivation layer 12 on the cut edge of the battery cell 1 , the passivation layer 12 completely covers the cut surface of the battery cell 1 and extends to the surface adjacent to the cut surface of the battery cell 1 .

[0056] In this embodiment, if Figure 2 and Figure 3As shown, if the passivation layer 12 only covers the cut surface of the cell 1, the edge position of the passivation layer 12 will be aligned with the edge position of the cut surface, and the passivation effect of the passivation layer 12 on the edge position of the cut surface is poor, and the recombination of the produced cell 1 at this position is high. Therefore, extending a portion of the passivation layer 12 to the surface adjacent to the cut surface of the cell 1 can improve the passivation effect of the passivation layer 12 on the cut surface, reduce the recombination of the produced cell 1, and thus improve the photoelectric conversion efficiency of the produced cell 1.

[0057] Specifically, Figure 2 As shown, the length L of the passivation layer 12 extending on the surface adjacent to the cut surface of the cell 1 satisfies: 1mm≤L≤3mm. For example, the length L can be: 1mm, 1.3mm, 1.5mm, 1.8mm, 2mm, 2.3mm, 2.5mm, 3mm, etc.

[0058] The length L of the passivation layer 12 extending on the surface adjacent to the cut surface of the cell 1 should not be too long or too short. If the length L of the passivation layer 12 extending on the surface adjacent to the cut surface of the cell 1 is too short (for example, shorter than 1 mm), the passivation effect of the passivation layer 12 on the edge of the cut surface may be poor; if the length L of the passivation layer 12 extending on the surface adjacent to the cut surface of the cell 1 is too long (for example, longer than 3 mm), the passivation layer 12 may contact the auxiliary grid 112, affecting the connection effect between the auxiliary grid 112 and the cell 1. At the same time, the passivation layer 12 increases the shielding of the light-receiving surface of the cell 1, which will also reduce the photoelectric conversion efficiency of the cell 1. Therefore, the length L of the passivation layer 12 extending on the surface adjacent to the cut surface of the cell 1 should be set within a reasonable range.

[0059] Specifically, Figure 3 As shown, the thickness d of the passivation layer 12 satisfies: 45nm≤d≤60nm. For example, the thickness of the passivation layer 12 can be 45nm, 48nm, 50nm, 52nm, 54nm, 56nm, 58nm, 60nm, etc.

[0060] The thickness of the passivation layer 12 should not be too thick or too thin. If the thickness of the passivation layer 12 is too thin (for example, thinner than 45 nm), the passivation effect of the passivation layer 12 on the cutting edge will be poor, and the composite of the produced battery cell 1 will increase and the photoelectric conversion efficiency will increase; if the thickness of the passivation layer 12 is too thick (for example, thicker than 60 nm), the time required for depositing the passivation layer 12 will increase, resulting in a low production efficiency of the battery cell 1. Therefore, the thickness of the passivation layer 12 should be selected within a reasonable range.

[0061] Optionally, the passivation layer is formed on the cut edge of the cell 1 by atomic layer deposition (ALD).

[0062] In a specific embodiment, Figure 3 and Figure 4 As shown, the step of applying voltage and laser to the cell 1 to anneal the gate electrode 11 and the passivation layer 12 includes: while applying voltage to the gate electrode 11 , irradiating the gate electrode 11 and the passivation layer 12 with laser.

[0063] Step S4: In the process of forming the passivation layer 12 at the cut edge of the battery cell 1, since the required time is 1 to 3 hours and the process temperature is 240 to 260°C, this step not only forms the passivation layer 12 at the cut edge of the battery cell 1, but also causes the contact resistance between the gate line electrode 11 and the battery cell 1 to increase, and causes more defects to appear inside the battery cell 1.

[0064] Therefore, the use of laser irradiation on the gate electrode 11 will cause a very high charge carrier injection at the location of the gate electrode 11 on the cell 1. Under a certain voltage, a local high current density and instantaneous high temperature will be generated at the contact interface between the gate electrode 11 and the cell 1, thereby inducing mutual diffusion of metal and silicon, improving the ohmic contact between the gate electrode 11 and the cell 1, and reducing the contact resistance between the gate electrode 11 and the cell 1. At the same time, the thermal effect of the laser on the gate electrode 11 and the thermal effect of the voltage on the cell 1 can also reduce the defects inside the cell 1, so as to reduce the recombination inside the cell 1.

[0065] Similarly, applying voltage to the gate electrode 11 will generate a thermal effect at the cut edge of the cell 1. Under the combined effect of temperature and laser, the crystallinity of the passivation layer 12 can be improved, thereby enhancing the passivation effect of the passivation layer 12 on the cut edge.

[0066] It is understandable that the laser may be used to irradiate the gate electrode 11 first and then the passivation layer 12, or the laser may be used to irradiate the passivation layer 12 first and then the gate electrode 11. In addition, when two sets of laser irradiation mechanisms are provided, the two sets of laser irradiation mechanisms may irradiate the gate electrode 11 and the passivation layer 12 with lasers at the same time.

[0067] More specifically, the laser emitting device 3 can emit laser light for irradiating the gate electrode 11 or the passivation layer 12. The laser light emitted by the laser emitting device 3 forms light spots arranged in the same direction on the cell 1.

[0068] like Figure 3 As shown, in step: when the gate line electrode 11 is irradiated with laser, a plurality of laser spots are arranged along the length direction of the gate line electrode 11 , and the plurality of laser spots are tangent to or intersect with the gate line electrode 11 .

[0069] The diameter of the laser spot is generally smaller than the diameter of the gate electrode 11 . Since the energy contained in the laser is relatively high, the laser spot can generate a relatively high thermal effect at the gate electrode 11 of the cell 1 when it is tangent to or intersects with the gate electrode 11 .

[0070] like Figure 4 As shown, in step: when the passivation layer 12 is irradiated with laser, multiple laser spots are arranged along the length direction of the passivation layer 12, and the multiple laser spots are tangent to or intersect with the portion of the passivation layer 12 extending to the surface adjacent to the cut surface of the battery cell 1. Among them, the laser emitted by the laser emitting device 3 can conveniently irradiate the portion of the passivation layer 12 extending to the surface adjacent to the cut surface of the battery cell 1.

[0071] Similarly, when the laser spot is tangent to or intersects with the portion of the passivation layer 12 extending to the surface adjacent to the cut surface of the cell 1, a higher thermal effect can be generated in the passivation layer 12 of the cell 1, and the thermal effect can affect the backlight surface of the cell 1 from the light-receiving surface of the cell 1.

[0072] Furthermore, in step: irradiating the gate electrode 11 with laser, the power P of the laser satisfies: 2600 W≤P≤2800 W. For example, the power of the laser can be: 2600 W, 2630 W, 2650 W, 2680 W, 2700 W, 2730 W, 2750 W, 2780 W, 2800 W, etc.

[0073] The power of the laser should be neither too large nor too small. If the power of the laser is too large (for example, greater than 2800W), the gate electrode 11 is prone to be over-sintered, the gate electrode 11 collapses to both sides, and the shielding area of ​​the cell 1 is increased or the gate electrode 11 shrinks, and the contact resistance between the gate electrode 11 and the cell 1 increases, so that the photoelectric conversion efficiency of the produced cell 1 is reduced; if the power of the laser is too low (for example, less than 2600W), it may not be able to effectively improve the contact degree between the gate electrode 11 and the cell 1, affecting the photoelectric conversion efficiency of the produced cell 1. Therefore, the power P of the laser should be selected within a reasonable range.

[0074] Similarly, in step: irradiating the passivation layer 12 with laser, the power P of the laser satisfies: 2600 W≤P≤2800 W. For example, the power of the laser can be: 2600 W, 2630 W, 2650 W, 2680 W, 2700 W, 2730 W, 2750 W, 2780 W, 2800 W, etc.

[0075] The power of the laser should be neither too large nor too small. If the power of the laser is too large (for example, greater than 2800W), it may damage the passivation layer 12, increase the recombination of the cut edge of the cell 1, and further reduce the photoelectric conversion efficiency of the produced cell 1; if the power of the laser is too low (for example, less than 2600W), it may not improve the passivation effect of the passivation layer 12 or improve the passivation effect of the passivation layer 12 to a limited extent, affecting the photoelectric conversion efficiency of the produced cell 1. Therefore, the power P of the laser should be selected within a reasonable range.

[0076] Furthermore, the wavelength of the laser irradiating the gate electrode 11 can be 532nm or 1064nm, and the wavelength of the laser irradiating the passivation layer 12 can be 532nm or 1064nm. When the wavelength of the laser is 532nm, the laser is green light; when the wavelength of the laser is 1064nm, the laser is red light.

[0077] In some specific embodiments, Figure 2 and Figure 3 As shown, the gate line electrode 11 includes a main gate 111 and a sub-gate 112 , and a plurality of sub-gates 112 are electrically connected to the main gate 111 .

[0078] Step: applying voltage to the gate line electrode 11 includes: bringing the probe 2 for applying voltage into contact with the main grid 111 .

[0079] In this step, the probe 2 connected to the power source abuts against the gate electrode 11, so that a voltage can be applied to the gate electrode 11. Since the plurality of sub-grids 112 are electrically connected to the main grid 111, the probe 2 can be electrically connected to each sub-grid 112 by being electrically connected to the main grid 111.

[0080] The cross-sectional dimension of the main grid 111 is larger than that of the auxiliary grid 112 , so the main grid can be more easily identified, and the probe 2 can more easily abut against the gate line electrode 11 to apply a voltage thereto.

[0081] Preferably, the number of probes 2 is consistent with the number of auxiliary grids 112 on the cell 1, and each probe 2 is respectively in contact with the position on the main grid 111 connected to the auxiliary grid 112, so as to facilitate the application of voltage to each auxiliary grid 112, and make the current and thermal effect generated by the voltage applied by the probe 2 to the cell 1 more balanced on the cell 1. It is understandable that the number of probes 2 can also be less than the number of auxiliary grids 112 on the cell 1.

[0082] In addition, multiple probes 2 can be integrated in one probe row, so that multiple probes 2 can be simultaneously abutted against the gate electrode 11. Multiple probes 2 can all abut against the same main grid 111, or can abut against different main grids 111 respectively.

[0083] In other embodiments, the gate electrode 11 includes only the secondary grid 112 but not the main grid 111, that is, a busbar-free cell is provided with only the secondary grid 112 but no main grid 111. For a busbar-free cell, the step of applying a voltage to the gate electrode 11 includes: contacting the probe 2 for applying a voltage with the secondary grid 112.

[0084] Further, when the gate electrode 11 is irradiated with laser, the voltage applied by the probe 2 to the gate electrode 11 may be the same as or different from the voltage applied by the probe 2 to the gate electrode 11 when the passivation layer 12 is irradiated with laser. It can be understood that the voltage applied by the probe 2 to the gate electrode 11 can be adjusted within a reasonable range according to actual working conditions, and the moving speed and power of the laser irradiating the gate electrode 11 and the wavelength of the laser can be adjusted within a reasonable range according to actual working conditions.

[0085] Specifically, in step: when applying voltage to the gate electrode 11 , the applied voltage U satisfies: 15V≤U≤20V. The applied voltage U may specifically be: 15V, 16V, 16.5V, 17V, 18V, 18.5V, 19V, 20V, etc.

[0086] The voltage applied to the gate electrode 11 should not be too large or too small. If the voltage applied is too large (for example, greater than 20V), the temperature of the cell 1 is likely to be too high, and the gate electrode 11 is over-sintered. At this time, the gate electrode 11 collapses to both sides, increasing the shielding area of ​​the cell 1 or the gate electrode 11 shrinks, and the contact resistance between the gate electrode 11 and the cell 1 increases, which reduces the photoelectric conversion efficiency of the produced cell 1. If the voltage applied is too small (for example, greater than 15V), the thermal effect of the voltage on the cell 1 is limited, the temperature of the cell 1 is low, and it is difficult to improve the ohmic contact between the gate electrode 11 and the cell 1, and it is also difficult to improve the passivation effect of the passivation layer 12 on the cutting edge. Therefore, the voltage value applied to the gate electrode 11 should be set within a reasonable range.

[0087] In the above embodiments, the cell 1 may be one of a PERC cell (Passivated Emitter and Rear Cell), a PERT cell (Passivated Emitter and Rear Totally-diffused cell), a TOPCON cell (Tunnel Oxide Passivated Contact), and a HJT cell (Heterojunction Technology).

[0088] In the present application, by forming a passivation layer 12 on the cut edge of the cell 1, and then applying a voltage to the gate electrode 11, irradiating the gate electrode 11 and the passivation layer 12 with a laser, the ohmic contact between the gate electrode 11 and the cell 1 can be improved, the contact resistance between the gate electrode 11 and the cell 1 can be reduced, the crystallinity of the passivation layer 12 can be improved, and the passivation effect of the passivation layer 12 on the cut edge can be improved, thereby increasing the photoelectric conversion efficiency of the cell 1 produced in this way by 0.05% relative to the photoelectric conversion efficiency of the existing cell 1, and the power of the photovoltaic module assembled and produced by the cell 1 is increased by 1W.

[0089] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for producing a battery cell, characterized in that: The production method of the battery cell (1) comprises: Printing a grid line electrode (11) on a battery cell (1); Sintering the gate line electrode (11); Cutting the battery cell (1); forming a passivation layer (12) on the cut edge of the battery cell (1); Voltage and laser are applied to the cell sheet (1) to anneal the gate line electrode (11) and the passivation layer (12).

2. The method for producing a battery cell according to claim 1, characterized in that: In the step of forming a passivation layer (12) on the cut edge of the battery cell (1), the passivation layer (12) completely covers the cut surface of the battery cell (1) and extends to the surface adjacent to the cut surface of the battery cell.

3. The method for producing a battery cell according to claim 2, characterized in that: The length L of the passivation layer (12) extending on the surface adjacent to the cut surface of the battery cell (1) satisfies: 1 mm ≤ L ≤ 3 mm.

4. The method for producing a battery cell according to claim 2, characterized in that: The thickness d of the passivation layer (12) satisfies: 45nm≤d≤60nm.

5. The method for producing a battery cell according to claim 2, characterized in that: Step: applying voltage and laser to the cell (1) to anneal the gate electrode (11) and the passivation layer (12) comprises: While a voltage is applied to the gate line electrode (11), the gate line electrode (11) and the passivation layer (12) are irradiated with laser.

6. The method for producing a battery cell according to claim 5, characterized in that: In the step: when the gate line electrode (11) is irradiated with laser, the multiple light spots of the laser are arranged along the length direction of the gate line electrode (11), and the multiple light spots of the laser are tangent to or intersect with the gate line electrode (11).

7. The method for producing a battery cell according to claim 5, characterized in that: In step: when irradiating the passivation layer (12) with laser, the multiple light spots of the laser are arranged along the length direction of the passivation layer (12), and the multiple light spots of the laser are tangent to or intersect with the portion of the passivation layer (12) extending to the surface adjacent to the cut surface of the battery cell (1).

8. The method for producing a battery cell according to claim 5, characterized in that: In the step of irradiating the gate electrode (11) and the passivation layer (12) with laser, the power P of the laser satisfies: 2600W≤P≤2800W.

9. The method for producing a battery cell according to claim 5, characterized in that: Step: Applying voltage to the gate line electrode (11) comprises: bringing a probe (2) for applying voltage into contact with the gate line electrode (11).

10. The method for producing a battery cell according to any one of claims 5 to 9, characterized in that: In the step: when applying a voltage to the gate line electrode (11), the applied voltage U satisfies: 15V≤U≤20V.

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