Electronic component
The direction of the magnetic flux opening of the spiral coil is parallel to the substrate, and the special connection of the perforated conductor using the facial conductor and the inductors is used to solve the problem of vortex current caused by the magnetic field of the spiral coil.
Patent Information
- Application Number
- CN202380046805.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-06-30
- Filing Date
- 2023-06-27
- Publication Date
- 2025-01-28
AI Technical Summary
When forming the LC composite component, the eddy current caused by the magnetic field of the helical coil causes deterioration of electrical characteristics, especially when the inductor is installed with other electronic components.
Design a type of electronic component, the magnetic flux opening direction of the spiral coil is parallel to the substrate, and uses the special connection of the perforated conductor through the facial conductor and inductors to ensure the opposite direction of the current, thereby suppressing the generation of vortex currents.
Effectively suppress the generation of vortex currents, maintains the high Q value of the electrical sensor, and can be small and medium -sized in compact electronic equipment.
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Figure CN119384882A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to an electronic component including a spiral coil inductor and a planar conductor. Background Art
[0002] A coil component in which a spiral coil is formed on a substrate can be used as an inductor.
[0003] Patent document 1 shows a coil component. The coil component of patent document 1 is manufactured by cutting a core substrate having a plurality of strip conductors and an insulating layer covering the strip conductors on the front and back sides into small pieces. Specifically, the coil component has a plurality of side conductors composed of strip conductors and an insulating layer covering the side conductors on the left and right sides of a rectangular parallelepiped insulator made of the core substrate as a raw material. In addition, a rectangular spiral coil is formed by having side conductors and bridging conductors connecting the side conductors on the upper and lower surfaces of the insulator, respectively.
[0004] Patent document 2 shows a wiring substrate. The wiring substrate of patent document 2 includes a first insulating layer formed without a core material, a first conductor layer and a second conductor layer arranged to be opposite to each other with the first insulating layer interposed therebetween, and a plurality of via conductors penetrating the first insulating layer and connecting the first conductor layer and the second conductor layer. The first conductor layer and the second conductor layer are adjacent to each other with the first insulating layer interposed therebetween. A magnetic body having a given shape is buried in the first insulating layer so as not to be in contact with any of the first conductor layer, the second conductor layer, and the plurality of via conductors. A coil is formed around the magnetic body by the wiring pattern respectively included in the first conductor layer and the second conductor layer and the plurality of via conductors. The coil extends in a direction intersecting with the stacking direction of the wiring substrate.
[0005] Prior Art Literature
[0006] Patent Literature
[0007] Patent Document 1: Japanese Patent Application Publication No. 2004-103756
[0008] Patent Document 2: Japanese Patent Application Publication No. 2021-197454 Summary of the invention
[0009] Problem that the invention aims to solve
[0010] When an inductor is formed on a conductive substrate such as a doped silicon substrate, it is effective to arrange the opening direction of the magnetic flux of the spiral coil in parallel with the substrate in order to prevent the Q value from being deteriorated. That is, the magnetic flux generated in the coil does not penetrate the substrate, and the loss caused by eddy current can be reduced. However, when the inductor is componentized and arranged on a circuit substrate together with elements such as a conductor and other electronic components, when a capacitor is combined with the above-mentioned inductor to form an LC composite component such as an LC filter or an impedance matching circuit, the following problems arise.
[0011] When a spiral coil is manufactured as in the coil components described in Patent Documents 1 and 2, the spiral coil is formed along a surface parallel to the surface of the substrate. However, if other electronic components are formed close to the opening of the spiral coil, eddy currents caused by the magnetic field of the spiral coil are generated in the conductor portion of the electronic component, and the electrical characteristics of the composite component are deteriorated.
[0012] Furthermore, when a capacitor is combined with the above-mentioned inductor to form an LC composite component such as an LC filter or an impedance matching circuit, the following problems occur.
[0013] When a spiral coil is manufactured as in the coil components described in Patent Documents 1 and 2, either the upper surface or the lower surface in the plane parallel to the plane of the substrate becomes the starting end or the ending end. However, if an internal wiring that is connected to a terminal or other elements is formed near the opening of the spiral coil, an eddy current caused by a magnetic field is generated in the internal wiring, and the electrical characteristics of the composite component are deteriorated.
[0014] Therefore, an object of the present invention is to provide an electronic component having a spiral coil in which the opening direction of the magnetic flux of the spiral coil is configured to be parallel to a substrate, and an electronic device in which the electronic component having the spiral coil and other elements are installed can be miniaturized even when the electronic component is installed together with other conductors, electronic components and other elements.
[0015] Another object of the present invention is to provide a small electronic component including an inductor having a predetermined inductance and internal wiring.
[0016] Technical solutions to solve problems
[0017] An electronic component as an example of the present disclosure is characterized by comprising:
[0018] substrate;
[0019] an insulator layer formed along a surface of the substrate;
[0020] an inductor formed in the insulator layer;
[0021] one or more planar conductors formed on the substrate or the insulator layer and extending along the substrate; and
[0022] One or more planar conductor connecting conductors are electrically connected to the planar conductor.
[0023] The inductor is an inductor composed of a spiral coil having a winding axis along the surface of the substrate, comprising: a plurality of surface direction conductors extending in a plurality of layers along the surface of the substrate; and a plurality of inductor via conductors connecting the surface direction conductors extending in different layers among the plurality of layers.
[0024] The direction of the current flowing through the inductor via-conductor adjacent to the planar conductor connecting conductor among the plurality of inductor via-conductors is opposite to the direction of the current flowing through the planar conductor connecting conductor.
[0025] Effects of the Invention
[0026] According to the present invention, the following electronic component can be obtained, that is, in an electronic component having a spiral coil in which the opening direction of the magnetic flux of the spiral coil is configured to be parallel to the substrate, when it is installed together with other conductive bodies, electronic components and other elements, an electronic device in which the electronic component having the spiral coil and other elements are installed can be miniaturized. In addition, a small electronic component having internal wiring together with an inductor having a given inductance can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 It is a diagram showing the structure of the electronic component 101 according to the first embodiment.
[0028] Figure 2 is an equivalent circuit diagram of the electronic component 101 .
[0029] Figure 3 (A) is a plan view showing the positional relationship between the electronic component 101 and another member 201 adjacent thereto. Figure 3 (B) is a plan view showing the positional relationship between an electronic component 301 as a comparative example and another member 201 such as an electronic component adjacent thereto.
[0030] Figure 4 (A) is a top view of the electronic component 111 . Figure 4 (B) is a plan view of an electronic component 311 as a comparative example in which another member 21 is provided in the electronic component together with the spiral coil.
[0031] Figure 5 It is a diagram showing the structure of an electronic component 102 according to the second embodiment.
[0032] Figure 6 It is a cross-sectional view in a state where the planar conductor 3 is formed.
[0033] Figure 7 It is a cross-sectional view in a state where the dielectric layer 11 is formed.
[0034] Figure 8 It is a cross-sectional view in a state where the planar conductor 4 is formed.
[0035] Fig. 9 It is a cross-sectional view in a state where the insulating layer 2 is formed.
[0036] Fig.10 It is a cross-sectional view in a state where the planar conductor 5B and the planar conductor connecting conductor 7B are formed.
[0037] Fig.11 It is a cross-sectional view in a state where the inductor via-conductor 6 and the planar conductor connecting conductor 7C are formed.
[0038] Fig.12 It is a cross-sectional view in a state where the plane-direction conductor 5A and the terminal electrodes 9A and 9B are formed.
[0039] Fig.13 It is a cross-sectional view in a state where the terminal electrodes 10A and 10B are formed.
[0040] Fig.14 It is a diagram showing the structure of an electronic component 103 according to the third embodiment.
[0041] Fig.15 It is a cross-sectional view in a state where the substrate via electrode 12 , the dielectric layer 11 , the planar conductor 4 , etc. are formed.
[0042] Fig.16 It is a cross-sectional view in a state where the planar conductor 5B and the planar conductor connecting conductor 7B are formed.
[0043] Fig.17 It is a cross-sectional view in a state where the inductor via-conductor 6 and the planar conductor connecting conductor 7C are formed.
[0044] Fig.18 It is a cross-sectional view in a state where the plane-direction conductor 5A and the terminal electrodes 9A and 9B are formed.
[0045] Fig.19 It is a cross-sectional view in a state where the terminal electrodes 10A and 10B are formed.
[0046] Fig. 20 It is a diagram showing the structure of an electronic component 104 according to the fourth embodiment. DETAILED DESCRIPTION
[0047] Hereinafter, several specific examples will be described with reference to the drawings to illustrate multiple embodiments for implementing the present invention. In each drawing, the same reference numeral is assigned to the same part. For the sake of clarity of explanation or ease of understanding, for the sake of convenience of explanation, the embodiments are divided into multiple embodiments for illustration, but partial replacement or combination of the structures shown in different embodiments can be performed. After the second embodiment, the description of matters common to the first embodiment will be omitted, and only the differences will be described. In particular, the same effects based on the same structure will not be mentioned successively in each embodiment.
[0048] 《First Embodiment》
[0049] Figure 1 is a diagram showing the structure of the electronic component 101 according to the first embodiment. Figure 1 The <top view> in is the top view of the electronic component 101. Figure 1 The <X1 cross-sectional view> in is a cross-sectional view of the X1-X1 portion in the top view of the electronic component 101, Figure 1 The <X2 cross-sectional view> in is a cross-sectional view of the X2-X2 portion in the top view of the electronic component 101. In addition, Figure 1 The <Y1 cross-sectional view> in is a cross-sectional view of the Y1-Y1 portion in the top view of the electronic component 101, Figure 1 The <Y2 cross-sectional view> in is a cross-sectional view of the Y2-Y2 portion in the top view of the electronic component 101.
[0050] The electronic component 101 includes a substrate 1, an insulator layer 2 formed along the surface of the substrate 1, and an inductor formed in the insulator layer 2. In addition, it includes planar conductor connection conductors 7A, 7B, 7C that are electrically connected to the planar conductor 3 formed on the substrate 1 and extending along the substrate 1, and a planar conductor connection conductor 8 that is electrically connected to the planar conductor 4 extending along the substrate 1.
[0051] The inductor includes a plurality of planar direction conductors 5A, 5B that extend in a plurality of layers (two layers in this example) along the surface of the substrate 1, and a plurality of inductor vias 6 that connect the planar direction conductors 5A, 5B extending in different layers among the plurality of layers. The inductor is an inductor formed of a spiral coil having a winding axis WA along the surface of the substrate 1.
[0052] The planar conductor connection conductors 7A, 7B, 7C, 8 are located at the ends in the winding axis direction of the spiral coil (coil opening of the spiral coil).
[0053] The planar conductors 3, 4 are capacitor electrodes. That is, a capacitor is formed by the planar conductors 3, 4 and a dielectric layer 11 sandwiched between these planar conductors 3, 4.
[0054] Like this, the planar conductors 3 and 4 are formed at a position closer to the substrate 1 than the plurality of surface-direction conductors 5A and 5B. With this structure, the inductor composed of a spiral coil including a plurality of surface-direction conductors 5A and 5B and a plurality of inductor via conductors 6 is located near the terminal electrodes 9A and 9B. Therefore, the path from the circuit to the inductor can be shortened to the minimum, and the Q value of the inductor can be kept high. In addition, the capacitor electrode can be arranged overlapping with the coil formation area, thereby saving space.
[0055] The direction of the current flowing through the inductor via-conductors 6 adjacent to the planar conductor connection conductors 7A, 7B, and 7C among the plurality of inductor via-conductors 6 is opposite to the direction of the current flowing through the planar conductor connection conductors 7A, 7B, and 7C. Furthermore, the direction of the current flowing through the inductor via-conductors 6 adjacent to the planar conductor connection conductor 8 is opposite to the direction of the current flowing through the planar conductor connection conductor 8. This will be described later. Figure 3 (A) Figure 3 (B) etc. are explained.
[0056] The substrate 1 is, for example, a silicon substrate, and a planar conductor 3 of a thin film of polycrystalline silicon, Al, etc. is formed on the surface of the substrate 1. A dielectric layer 11 composed of SiO2, SiN, etc. is formed in a predetermined area on the upper surface of the planar conductor 3. A planar conductor 4 of a thin film of polycrystalline silicon, Al, etc. is formed on the surface of the dielectric layer 11.
[0057] A surface conductor 5A and terminal electrodes 9A and 9B are formed on the surface of the insulating layer 2. The planar conductor 3 is electrically connected to the terminal electrode 9B via planar conductor connecting conductors 7A, 7B, and 7C. The planar conductor 4 is electrically connected to the planar conductor 5B via a planar conductor connecting conductor 8.
[0058] As described above, the planar conductor connection conductor is composed of three parts, namely, the planar conductor connection conductors 7A, 7B, and 7C. One of the planar conductor connection conductors 7B is formed in the same layer as the surface direction conductor 5B. The planar conductor connection conductor 7B is formed in the process of forming the surface direction conductor 5B. Therefore, there is no need to form a special conductor pattern, which is used to make the direction of the current flowing through the inductor via-hole conductors 6 adjacent to the surface direction conductors 5A and 5B among the plurality of inductor via-hole conductors 6 opposite to the direction of the current flowing through the planar conductor connection conductor 7C.
[0059] like Figure 2As shown, the electronic component 101 functions as an LC composite component composed of a series circuit of an inductor and a capacitor. In the electronic component 101, the spiral coil inductor L1 is composed of the surface conductors 5A and 5B and the inductor via conductor 6. The capacitor C is composed of the planar conductors 3 and 4 and the dielectric layer 11 sandwiched by these planar conductors 3 and 4. The inductor L2 is composed of the planar conductor connection conductors 7A, 7B, 7C, 8, etc.
[0060] In addition, Figure 1 When the planar conductors 3 and 4 shown are resistors, the electronic component 101 functions as an LCR composite component composed of a series circuit of an inductor, a capacitor, and a resistor element.
[0061] An electronic component in which an inductor and a capacitor are connected in series can be used as a frequency filter or an impedance matching circuit.
[0062] First, a comparative example of the electronic component 101 according to the present embodiment will be described. Figure 3 (B) is a plan view showing the positional relationship between an electronic component 301 as a comparative example and another member 201 such as an electronic component adjacent thereto. When a current flows from the terminal electrode 9A, the electronic component 301 as a comparative example is Figure 3 In the direction shown in (B), the direction of the magnetic flux around the upper inductor via conductor 6 is the same (right-handed), and the direction of the magnetic flux around the lower inductor via conductor 6 is the same (left-handed). Therefore, the overall magnetic flux φ (thick dotted line) generated inside and outside the spiral coil is greatly expanded.
[0063] on the other hand, Figure 3 (A) is a top view showing the positional relationship between the electronic component 101 and other adjacent components 201 according to the present embodiment. The dotted concentric circles in the figure show the magnetic flux generated by the via conductor 6 for the inductor and the conductor 7C for connecting the planar conductor. The thick line shows the overall magnetic flux φ generated inside and outside the spiral coil.
[0064] In the electronic component 101, among the plurality of inductor via-conductors 6, the inductor via-conductors adjacent to the planar conductor connecting conductors 7A, 7B, and 7C (in order of Figure 3 The direction shown in (A) is the direction of the current flowing through the right end of the three upper inductor via-conductors 6) and the direction of the current flowing through the planar conductor connection conductors 7A, 7B, and 7C are opposite to each other. Figure 3 Compared with the example shown in (B), the spread of the magnetic flux φ can be suppressed. Therefore, even if the member 201 and the electronic component 101 are adjacent to each other, there is little influence on each other.
[0065] In the electronic component 101 of the present embodiment, the via-hole conductor for inductor (according to Figure 3 The direction shown in (A) is opposite to the direction of the current flowing through the right-end inductor via-conductor 6 of the two lower inductor via-conductors 6 and the direction of the current flowing through the planar conductor connecting conductor 8. Therefore, the effect of suppressing the spread of the magnetic flux φ is high.
[0066] In the electronic component 301 as the comparative example, the spread of the magnetic flux φ is large, but in the electronic component 101 of the present embodiment, the spread of the magnetic flux φ can be suppressed, so that the interval d1 between the electronic component 101 and the member 201 can be made smaller than Figure 3 The interval d2 shown in (B) is small.
[0067] Figure 4 (B) is a top view of an electronic component 311 as a comparative example, which includes another member 21 in the electronic component together with the above-mentioned spiral coil. The structure of the spiral coil in the electronic component 311 is as follows: Figure 3 As shown in (B).
[0068] on the other hand, Figure 4 (A) is a top view of the electronic component 111 according to the present embodiment. The electronic component 311 includes the other member 21 in the electronic component together with the spiral coil. The structure of the spiral coil in the electronic component 111 is as follows: Figure 3 As shown in (A).
[0069] In the electronic component 311 as a comparative example, the spread of the magnetic flux φ is large, but in the electronic component 111 of this embodiment, the spread of the magnetic flux φ can be suppressed, so the interval d1 between the spiral coil and the member 21 can be made smaller than the interval d2 of the comparative example, and the electronic component 111 can be compact.
[0070] In the first embodiment, the example is shown in which the inductor via-conductors 6 are arranged in two rows, the planar conductor connection conductors 7A, 7B, 7C are located and arranged at the end of one of the two rows of inductor via-conductors 6, and the planar conductor connection conductor 8 is located and arranged at the end of the other row, but the number of inductor via-conductors 6 is not limited to two rows. In addition, even if the planar conductor connection conductors 8 are not arranged and provided at the ends of all the rows, the spread of the magnetic flux φ is suppressed.
[0071] exist Figure 3 (A) Figure 4In the example shown in (A), the intervals between the end portions of the via conductors 6 for inductors and the planar conductor connection conductors 7A, 7B, 7C or 8 are equal intervals with respect to the intervals of the via conductors 6 for inductors. However, such intervals do not have to be equal intervals. However, if such intervals are too close, the magnetic fields generated by the spiral coils weaken each other, and thus the inductance of the inductor formed by the spiral coils becomes smaller. On the contrary, if the above intervals are too large, the effect of suppressing the expansion of the magnetic flux generated by the spiral coils becomes smaller. Therefore, it is preferable that the above intervals are approximately equal intervals.
[0072] In Figure 1 the example shown, the planar conductors 3 and 4 are formed on the substrate 1, but the planar conductors 3 and 4 may also be formed in the intermediate layer of the insulator layer 2.
[0073] In addition, there is also a case where eddy currents are generated in the planar conductors 3 and 4 due to the high-frequency magnetic field emitted by the spiral coils. However, as shown in (A) of Figure 3 (A) of Figure 3 (B) of Figure 4 (A) of Figure 4 (B) shown, the expansion of the magnetic flux φ can be suppressed, and thus the loss caused by the above eddy currents (deterioration of the Q value of the inductor) can be suppressed.
[0074] Furthermore, in the electronic component shown in the first embodiment, the planar conductor 3 is not formed only in the capacitor forming portion, but is formed across substantially the entire surface of the substrate 1. Therefore, it has electromagnetic shielding properties for the components and circuits below the substrate 1.
[0075] <<Second Embodiment>>
[0076] In the second embodiment, an example of an electronic component in which the structure of the terminal electrodes is different from the example shown in the first embodiment is illustrated.
[0077] Figure 5 is a diagram showing the structure of the electronic component 102 according to the second embodiment. Figure 5 The <top view> in Figure 5 is a top view of the electronic component 102. The <X1 cross-sectional view> in Figure 5 is a cross-sectional view of the portion X1-X1 in the top view of the electronic component 102, and the <X2 cross-sectional view> in
[0078] The electronic component 102 includes a substrate 1, an insulator layer 2 formed along the surface of the substrate 1, an inductor formed in the insulator layer 2, planar conductors 3 and 4 formed on the substrate 1 and extending along the substrate 1, planar conductor connection conductors 7A, 7B, 7C that are electrically connected to the planar conductor 3, and a planar conductor connection conductor 8 that is electrically connected to the planar conductor 4.
[0079] Terminal electrodes 10A and 10B are formed on the surface of the insulating layer 2. The terminal electrodes 10A and 10B are electrically connected to the terminal electrodes 9A and 9B. Figure 1 As shown in FIG. 1 , the surface direction conductors 5A and 5B are exposed together with the terminal electrodes 9A and 9B, but in the electronic component 102 shown in the second embodiment data, only the terminal electrodes 10A and 10B are exposed. The other structures are the same as those shown in the first embodiment.
[0080] Next, a method for manufacturing the electronic component 102 will be exemplified. Figure 6 1 is a cross-sectional view of a state where a planar conductor 3 is formed. The substrate 1 is a silicon intrinsic semiconductor substrate or a silicon impurity semiconductor substrate, and in this process, it is formed by the following semiconductor process, that is, an Al film or a Cu film is vapor-deposited on the surface of the substrate 1, and then peeled off; the Al film or the Cu film is formed by sputtering or CVD, and then photolithography is performed, etching is performed, etc.
[0081] Figure 7 1 is a cross-sectional view of a state where a dielectric layer 11 is formed. In this step, a dielectric layer 11 such as a SiO2 film or a SiN film is formed on the surface of the planar conductor 3 by a semiconductor process such as sputtering or CVD, and then a pattern of the dielectric layer 11 is formed by photolithography and etching.
[0082] Figure 8 1 is a cross-sectional view of a state where a planar conductor 4 is formed. In this process, the pattern of the planar conductor 4 is formed by the following semiconductor process, similarly to the method for forming the planar conductor 3, i.e., an Al film or a Cu film is vapor-deposited and then peeled off; an Al film or a Cu film is formed by sputtering or CVD, and then photolithography is performed, etching is performed, etc.
[0083] Fig. 9 It is a cross-sectional view in a state where the insulating layer 2 is formed. In this process, a resin (organic) film, SiO2 film, SiN film or other inorganic film is formed by a method such as spin coating, CVD or sputtering, and then an opening AP is formed at a given position by photolithography and etching.
[0084] Fig.10 FIG. 2 is a cross-sectional view of a state where the planar conductor 5B and the planar conductor connection conductor 7B are formed. Fig. 9 The opening AP shown is used to form a film on the conductors 7A and 8 for connecting the planar conductors, and a surface conductor 5B and a conductor 7B for connecting the planar conductors are formed on the surface of the insulating layer 2. For example, the film is formed on Cu, and then photolithography is performed, and then plating is performed; or Cu is sputtered, and then photolithography is performed, and then etching is performed; or photolithography is performed on the Cu film, and then vapor deposition is performed, and then peeling is performed.
[0085] Fig.11 This is a cross-sectional view in a state where the via conductor 6 for the inductor and the conductor 7C for planar conductor connection are formed. In this process, the pattern of the planar conductor 4 is formed by the following semiconductor processes, that is, evaporating an Al film or a Cu film and performing lift-off; forming an Al film or a Cu film by sputtering or CVD, performing photolithography, and performing etching, etc.
[0086] Fig.12 This is a cross-sectional view in a state where the planar direction conductor 5A and the terminal electrodes 9A, 9B are formed. In this process, the planar direction conductor 5A and the terminal electrodes 9A, 9B are formed on the surface of the insulator layer 2. For example, they are formed by the following methods, that is, forming a Cu film and performing photolithography and plating; or sputtering Cu and performing photolithography and etching; or performing photolithography on a Cu film and performing evaporation and lift-off.
[0087] Fig.13 This is a cross-sectional view in a state where the terminal electrodes 10A, 10B are formed. In this process, the terminal electrodes 10A, 10B are electrodes for mounting, and are formed by performing plating such as Ni plating and Au plating on the surfaces of the terminal electrodes 9A, 9B. Then, a protective film is formed, and the parts of the terminal electrodes 10A, 10B are opened to expose the terminal electrodes 10A, 10B. The insulator layer 2 may also be composed of multiple types of layers. In the case where it is all formed of the same material, there is also a situation where, after completion, the boundary cannot be seen as Fig.13 shown.
[0088] In addition, in this second embodiment, even if the terminal electrodes 9B, 10B are large, the high-frequency magnetic field emitted by the spiral coil can effectively avoid the terminal electrodes 9B, 10B. Thus, the loss caused by eddy currents can be suppressed, and the decrease in the Q value of the inductor composed of the spiral coil can be suppressed. This is the same in each of the embodiments shown later.
[0089] <<Third Embodiment>>
[0090] In the third embodiment, an example of an electronic component in which the structure of the planar conductor is different from the examples shown in the first embodiment and the second embodiment is illustrated.
[0091] Fig.14 This is a diagram showing the structure of the electronic component 103 according to the third embodiment. Fig.14 The <top view> in Fig.14 is a top view of the electronic component 103. The <X1 cross-sectional view> in Fig.14The <Cross-sectional view X2> is a cross-sectional view of the X2-X2 portion in the top view of the electronic component 103.
[0092] The electronic component 103 includes a substrate 1, an insulator layer 2 formed along the surface of the substrate 1, an inductor formed within the insulator layer 2, a planar conductor 4 formed on the substrate 1 and extending along the surface of the substrate 1, planar conductor connection conductors 7A, 7B, 7C that are electrically connected to the planar conductor 4, and a planar conductor connection conductor 8 that is electrically connected to the planar conductor 4.
[0093] As shown in the cross-sectional view X2, a dielectric layer 11 is formed on the surface of the substrate 1. The planar conductor 4 is formed on the surface of this dielectric layer 11. In addition, as shown in the cross-sectional view X1, a substrate conduction electrode 12 is formed at a given position on the surface of the substrate 1. The substrate 1 is a semiconductor substrate with high conductivity or a semiconductor substrate having a layer with high conductivity formed on the surface where the above-mentioned layers are formed. Other structures are as shown in the second embodiment.
[0094] Next, an example of the manufacturing method of the electronic component 103 is illustrated. Fig.15 This is a cross-sectional view in a state where the substrate conduction electrode 12, the dielectric layer 11, the planar conductor 4, etc. are formed. The substrate 1 is a silicon impurity semiconductor substrate. In this process, it is formed by the following semiconductor processes. That is, as shown in the cross-sectional view X1, an Al film or a Cu film is vapor-deposited on the surface of the substrate 1 and then peeled off; an Al film or a Cu film is formed by sputtering or CVD, followed by photolithography and etching, etc. In addition, as shown in the cross-sectional view X2, a dielectric layer 11 such as a SiO2 film or a SiN film is formed on the surface of the substrate 1 by semiconductor processes such as sputtering or CVD, and then photolithography is performed, and the pattern of the dielectric layer 11 is formed by etching.
[0095] Fig.16 This is a cross-sectional view in a state where the planar-direction conductor 5B and the planar conductor connection conductor 7B are formed. Fig.17 This is a cross-sectional view in a state where the inductor via conductor 6 and the planar conductor connection conductor 7C are formed. Fig.18 This is a cross-sectional view in a state where the planar-direction conductor 5A and the terminal electrodes 9A, 9B are formed. Fig.19 This is a cross-sectional view in a state where the terminal electrodes 10A, 10B are formed.
[0096] Figures 16 to 19 The respective processes shown are the same as those Figures 10 to 13 shown in the second embodiment.
[0097] Thus, the present invention can also be applied when using the substrate as part of the planar conductor for the capacitor.
[0098] 《Fourth Embodiment》
[0099] In the fourth embodiment, an example of an electronic component in which a planar conductor and a semiconductor substrate together form a semiconductor element is illustrated.
[0100] Fig. 20 FIG. is a diagram showing the structure of the electronic component 104 according to the fourth embodiment. Fig. 20 The <top view> in is the top view of the electronic component 104. Fig. 20 The <X1 cross-sectional view> in is a cross-sectional view of the X1-X1 portion in the top view of the electronic component 104, Fig. 20 The <X2 cross-sectional view> in is a cross-sectional view of the X2-X2 portion in the top view of the electronic component 104.
[0101] The substrate 1 is a P-type silicon semiconductor substrate. An N-well 13 is formed at a given portion of the substrate 1, and a P+ region 14 is formed in a given region within the N-well.
[0102] A substrate conduction electrode 12 is formed on the surface of the N-well 13 region. In addition, a substrate conduction electrode 15 is formed on the surface of the P+ region. According to this structure, a diode is constituted by the N-well 13, the substrate conduction electrode 12 that conducts with the N-well 13, the P+ region 14, and the substrate conduction electrode 15 that conducts with the P+ region.
[0103] According to the above structure, the electronic component 104 functions as an electronic component in which a diode is connected in series with an inductor constituted by a spiral coil. For example, it can be used as an ESD protection element.
[0104] In addition, in Fig. 20 the example shown, a diode is formed on the substrate 1, but a transistor can also be formed in the same manner.
[0105] Finally, the present invention is not limited to the above-described embodiments. Modifications and changes can be appropriately made by those skilled in the art. The scope of the present invention is not shown by the above-described embodiments, but by the claims. Furthermore, the scope of the present invention includes modifications and changes from the embodiments within the scope equivalent to the claims.
[0106] Hereinafter, the structure of the electronic component of the present invention will be listed.
[0107] <1>
[0108] An electronic component, comprising:
[0109] a substrate;
[0110] an insulator layer formed along the surface of the substrate;
[0111] an inductor formed within the insulator layer;
[0112] a planar conductor formed on the substrate or the insulator layer and extending along the substrate; and
[0113] a conductor for connecting the planar conductor, which is electrically connected to the planar conductor;
[0114] The inductor is an inductor composed of a spiral coil having a winding axis along the surface of the substrate, comprising: a plurality of surface direction conductors extending in a plurality of layers along the surface of the substrate; and a plurality of inductor via conductors connecting the surface direction conductors extending in different layers among the plurality of layers.
[0115] The direction of the current flowing through the inductor via-conductor adjacent to the planar conductor connecting conductor among the plurality of inductor via-conductors is opposite to the direction of the current flowing through the planar conductor connecting conductor.
[0116] <2>
[0117] according to <1> The electronic component, wherein
[0118] The planar conductor connecting conductor is located at an end portion of the spiral coil in the direction of the winding axis (a coil opening of the spiral coil inductor).
[0119] <3>
[0120] according to <1> or <2> The electronic component, wherein
[0121] The planar conductor is formed at a position closer to the substrate than the plurality of planar conductors.
[0122] <4>
[0123] according to <3> The electronic component, wherein
[0124] The planar conductor connecting conductor is composed of three or more parts, and one of the parts is formed in the same layer as the planar conductor.
[0125] <5>
[0126] according to <1> to <4> The electronic component according to any one of claims , wherein
[0127] The substrate is a low-resistance semiconductor substrate,
[0128] The planar conductor is a capacitor electrode that constitutes a capacitor together with the semiconductor substrate.
[0129] <6>
[0130] according to <1> to <5> The electronic component according to any one of claims , wherein
[0131] The planar conductor is a resistor film.
[0132] <7>
[0133] according to <1> to <6> The electronic component according to any one of claims , wherein
[0134] The substrate is a semiconductor substrate,
[0135] The planar conductor and the semiconductor substrate together constitute a semiconductor element.
[0136] <8>
[0137] according to <1> to <7> The electronic component according to any one of claims , wherein
[0138] The inductor via-conductors are arranged in two rows, and the planar conductor connecting conductors are located and arranged at the ends of the inductor via-conductors in the two rows.
[0139] <9>
[0140] according to <8> The electronic component, wherein
[0141] The end portions of the inductor via-conductors and the planar conductor connecting conductors are arranged at equal intervals.
[0142] Description of Reference Numerals
[0143] AP: Open mouth;
[0144] C: capacitor;
[0145] d: interval;
[0146] L1: spiral coil inductor;
[0147] L2: inductor;
[0148] WA: winding axis;
[0149] 1: Substrate;
[0150] 2: Insulator layer;
[0151] 3, 4: Planar conductor;
[0152] 5A, 5B: Surface conductor
[0153] 6: Via conductor for inductor;
[0154] 7A, 7B, 7C, 8: conductors for connecting planar conductors;
[0155] 9A, 9B: terminal electrodes;
[0156] 10A, 10B: terminal electrodes;
[0157] 11: dielectric layer;
[0158] 12: substrate conduction electrode;
[0159] 13: N-well;
[0160] 14: P+ region;
[0161] 15: substrate conduction electrode;
[0162] 21: Component;
[0163] 101-104: electronic components;
[0164] 111: Electronic components;
[0165] 201: Component;
[0166] 301: electronic component as a comparative example;
[0167] 311: Electronic components.
Claims
1. An electronic component comprising: substrate; an insulator layer formed along a surface of the substrate; an inductor formed in the insulator layer; One or more planar conductors are formed on the substrate or the insulator layer and extend along the substrate; as well as One or more planar conductor connecting conductors are electrically connected to the planar conductor. The inductor is an inductor composed of a spiral coil having a winding axis along the surface of the substrate, and includes: a plurality of surface-direction conductors extending in a plurality of layers along the surface of the substrate; and a plurality of inductor via conductors for connecting the surface direction conductors extending in different layers among the plurality of layers. The direction of the current flowing through the inductor via-conductor adjacent to the planar conductor connecting conductor among the plurality of inductor via-conductors is opposite to the direction of the current flowing through the planar conductor connecting conductor.
2. The electronic component according to claim 1, wherein The planar conductor connecting conductor is located at an end portion of the spiral coil in the direction of the winding axis.
3. The electronic component according to claim 1 or 2, wherein: The planar conductor is formed at a position closer to the substrate than the plurality of planar conductors.
4. The electronic component according to claim 3, wherein The planar conductor connecting conductor is composed of three or more parts, and one of the parts is formed in the same layer as the planar conductor.
5. The electronic component according to any one of claims 1 to 4, wherein The substrate is a low-resistance semiconductor substrate, The planar conductor is a capacitor electrode that constitutes a capacitor together with the semiconductor substrate.
6. The electronic component according to any one of claims 1 to 5, wherein The planar conductor is a resistor film.
7. The electronic component according to any one of claims 1 to 6, wherein: The substrate is a semiconductor substrate, The planar conductor and the semiconductor substrate together constitute a semiconductor element.
8. The electronic component according to any one of claims 1 to 7, wherein: The inductor via-conductors are arranged in two rows, and the planar conductor connecting conductors are located and arranged at the ends of the inductor via-conductors in the two rows.
9. The electronic component according to claim 8, wherein The end portions of the inductor via-conductors and the planar conductor connecting conductors are arranged at equal intervals.
Citation Information
Patent Citations
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