Cutting equipment and cutting method for planetary rotary cutting of semiconductor

Abstract

The invention discloses cutting equipment and a cutting method for planetary rotary cutting of a semiconductor, and belongs to the technical field of semiconductor material processing. The cutting equipment comprises a cutting bin, a fixing plate, a rotary fixing table, a grooved wheel guide rail disc and at least two second grooved wheels, and the fixing plate is fixed in the cutting bin; the rotary fixing table is connected with the fixing plate through a lifting assembly, the rotary fixing table can ascend or descend relative to the fixing plate, and the rotary fixing table is used for fixing a semiconductor and can drive the semiconductor to rotate; a first arc-shaped guide rail is arranged on the grooved wheel guide rail disc, two first grooved wheels are arranged on the first arc-shaped guide rail, the first grooved wheels can move along the first arc-shaped guide rail, and the first grooved wheels are located below the rotary fixing table; the second grooved wheel is matched with the first grooved wheel and used for winding a cutting line. According to the equipment, one-point cutter feeding is optimized into circumferential cutter feeding in the cutting process, so that circumferential cutting stress of a SiC crystal bar is uniform, local stress is prevented from being too large, the curvature of a SiC wafer is reduced, and meanwhile, the distribution uniformity of the curvature is improved.

Description

Technical Field

[0001] The present application relates to a planetary rotary cutting semiconductor cutting device and a cutting method, belonging to the technical field of semiconductor material processing. Background Art

[0002] SiC single crystal substrates have become the preferred semiconductor material due to their excellent physical properties such as large bandgap, high resistivity and thermal conductivity, and strong breakdown field. With the continuous development of new energy technologies, the market demand for silicon carbide single crystal substrates continues to expand. More importantly, mass commercial applications have also put forward higher requirements on the quality of silicon carbide single crystal substrates.

[0003] Since SiC has high hardness and brittleness, its processing requirements in production are relatively high. Among them, processing SiC standard crystal rods into SiC wafers by wire cutting is a commonly used processing method in the current market. However, during the cutting process, since the cutting wire is difficult to control when entering and exiting the knife and processing force in the crystal, it sometimes affects the processing surface of the SiC wafer. At present, the cutting of crystal rods mostly adopts a one-point entry method. This method makes the force uneven during the cutting process of SiC crystals, and there is a situation where the force is too large locally. Therefore, the curvature of the cut SiC wafer increases and the curvature distribution is uneven, which affects the subsequent use of the material. Summary of the invention

[0004] In order to solve the above problems, a planetary rotary cutting semiconductor cutting device and a cutting method are provided. The device can optimize the cutting process from point entry to circular entry, so that the force of the SiC crystal rod circular cutting is uniform, avoiding excessive local force, reducing the curvature of the SiC wafer and improving the uniformity of the curvature distribution.

[0005] According to one aspect of the present application, a planetary rotary cutting semiconductor cutting device is provided, comprising:

[0006] A cutting chamber, wherein the cutting chamber is provided with a liquid inlet and a liquid outlet, and the interior of the cutting chamber is hollow and contains cutting liquid;

[0007] A fixing plate, wherein the fixing plate is fixed in the cutting chamber;

[0008] A rotating fixed platform, the rotating fixed platform is connected to the fixed plate through a lifting assembly, the rotating fixed platform can rise or fall relative to the fixed plate, the rotating fixed platform is used to fix the semiconductor and can drive the semiconductor to rotate;

[0009] A groove wheel guide plate, wherein the groove wheel guide plate is arranged in the cutting chamber, and the groove wheel guide plate is provided with a first arc-shaped guide rail, the arc of the first arc-shaped guide rail does not exceed 90°, two first groove wheels are arranged on the first arc-shaped guide rail, the first groove wheels can move along the first arc-shaped guide rail, and the first groove wheels are located below the rotating fixed table;

[0010] At least two second groove wheels, the second groove wheels are arranged on the second arc guide rail and located above the rotating fixed table, the second arc guide rail and the first arc guide rail are arranged cocentrically, and the second groove wheels cooperate with the first groove wheels for winding the cutting line.

[0011] Optionally, a reserved hole is provided at the center of the grooved wheel guide plate, and the rotating fixed platform passes through the reserved hole.

[0012] Optionally, the second arc-shaped guide rail is arranged on a grooved wheel guide rail plate.

[0013] Optionally, the first groove wheel moves along the first arc-shaped guide rail at an angle of 10° to 80°, and the second arc-shaped guide rail is connected to the first arc-shaped guide rail to form a circular guide rail.

[0014] Preferably, the angle at which the first groove wheel moves along the first arc-shaped guide rail is 10° to 30°.

[0015] Optionally, a limiter is provided at the junction of the first arc-shaped guide rail and the second arc-shaped guide rail.

[0016] According to another aspect of the present application, a planetary rotary cutting method for semiconductors is provided, characterized in that it is performed using any of the cutting devices described above, and comprises the following steps:

[0017] (1) Fixing the semiconductor on a rotating fixed table;

[0018] (2) The rotating fixed table drives the semiconductor to rotate, the two first groove wheels reciprocate along the first arc-shaped guide rail, and the second groove wheel reciprocates along the second arc-shaped guide rail, and the movement speed of the first groove wheel and the second groove wheel is consistent;

[0019] (3) The lifting assembly drives the rotating fixed table to descend, so that the semiconductor moves toward the cutting line between the two first groove wheels to perform semiconductor cutting until the cutting is completed.

[0020] Optionally, the semiconductor rotates at a speed of 0.05 to 0.1 rad / s, and the semiconductor descends at a speed of 0.002 to 0.005 mm / min.

[0021] The rotation speed of the semiconductor and the descent speed of the semiconductor are related to the cutting speed. If the rotation speed is too slow or the descent speed is too low, the cutting speed will slow down. If the rotation speed is too fast or the descent speed is too fast, although the cutting speed will be significantly improved, the surface shape after cutting will be worse.

[0022] Optionally, the reciprocating speed of the first groove wheel along the first arc-shaped guide rail is 0.025-0.05 rad / s.

[0023] The movement speed of the first groove wheel is combined with the rotation speed of the semiconductor, which can buffer the cutting force during cutting, making the force more uniform during the semiconductor cutting process. If the movement speed is too slow, the buffering effect of the cutting force will decrease, and the effect of improving the surface quality will be poor. If the movement speed is too fast, while buffering the cutting force, additional force will be introduced, which will also deteriorate the surface quality of the cutting blade.

[0024] Optionally, in step (2), when the first groove wheel moves clockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate counterclockwise, and when the first groove wheel moves counterclockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate clockwise.

[0025] During the above-mentioned cutting process, the movement directions of the first groove wheel and the semiconductor are ensured to be opposite, thereby increasing the cutting speed, and under the setting of the above-mentioned cutting parameters, uniform force can be achieved, further improving the surface quality of the semiconductor after cutting.

[0026] Optionally, the wire tension of the cutting wire is 20-45N, and the wire feed speed of the cutting wire is 10-14mm / s.

[0027] On the basis of the movement of the first groove wheel, the feed speed of the cutting wire is the premise to ensure the movement of the cutting wire. If the feed speed is too slow, the cutting efficiency will decrease. If the feed speed is too fast, the cutting efficiency will increase, but it will introduce additional force, resulting in a decrease in the surface quality of the cut piece. The wire tension of the cutting wire is also to ensure uniform cutting of the semiconductor during the cutting process. If the wire tension is too large or too small, it will cause excessive force during the cutting process, thereby reducing the surface quality.

[0028] The tension and feed speed of the cutting wire are both set according to the reciprocating speed of the first groove wheel. The above parameters cooperate with each other to achieve good cutting of semiconductors.

[0029] The beneficial effects of this application include but are not limited to:

[0030] 1. According to the planetary rotary cutting semiconductor cutting equipment of the present application, the movement of the rotating fixed table and the first groove wheel can realize circular cutting of the crystal, thereby improving the uniformity of force on the semiconductor during the cutting process, so as to improve the surface quality of the semiconductor, especially reduce the curvature of the semiconductor, and improve the uniformity of the distribution of the curvature on the cutting surface.

[0031] 2. According to the planetary rotary cutting semiconductor cutting equipment of the present application, the second arc guide rail is arranged on the groove wheel guide rail disk, which can not only improve the compactness of the structure, but also prevent the cutting line from leaking into the cutting chamber, avoid introducing impurities into the cutting chamber, improve the cleanliness during the cutting process, and further improve the cutting quality of the semiconductor.

[0032] 3. According to the planetary rotary cutting method of semiconductors of the present application, by adjusting the rotation speed of the rotating fixed table and the movement speed of the first groove wheel during the cutting process, it is possible to achieve optimized cutting of the semiconductor, while improving the surface quality of the semiconductor after cutting, avoiding the introduction of surface damage and reducing the stress generated during cutting.

[0033] 4. According to the planetary rotary cutting method of the present application, it is possible to achieve efficient and uniform cutting of semiconductors, and obtain semiconductor substrates with low and uniform stress and small and uniform curvature. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0035] Figure 1 This is a schematic diagram of the structure of the planetary rotary cutting semiconductor cutting equipment involved in Example 1 of the present application.

[0036] Figure 2 This is a front view of the sheave guide plate, the first sheave, the second sheave and the fixed plate involved in Example 1 of the embodiment of the present application.

[0037] Figure 3 This is a side view of the fixed plate and the rotating fixed table involved in Example 1 of the embodiment of the present application.

[0038] List of parts and reference numerals:

[0039] 10. Cutting chamber; 11. Liquid inlet; 12. Liquid outlet; 20. Fixed plate; 21. Telescopic rod; 31. Adhesive plate; 32. Rotating axis; 33. Fixed axis; 40. Groove guide plate; 41. First arc guide; 42. Second arc guide; 43. Reserved hole; 50. First groove wheel; 52. Second groove wheel; 53. Limiter. DETAILED DESCRIPTION

[0040] The present application is described in detail below with reference to embodiments, but the present application is not limited to these embodiments.

[0041] Unless otherwise specified, the raw materials in the examples and comparative examples of the present application were purchased through commercial channels.

[0042] Unless otherwise specified, the methods used in the examples and comparative examples of the present application are conventional methods in the prior art.

[0043] Example 1

[0044] refer to Figure 1-3 The present embodiment discloses a planetary rotary cutting semiconductor 34 cutting device, comprising: a cutting chamber 10, the cutting chamber 10 is provided with a liquid inlet 11 and a liquid outlet 12, the interior of the cutting chamber 10 is hollow and contains cutting liquid; a fixed plate 20, the fixed plate 20 is fixed in the cutting chamber 10; a rotating fixed table, the rotating fixed table is connected to the fixed plate 20 through a lifting component, the rotating fixed table can rise or fall relative to the fixed plate 20, the rotating fixed table is used to fix the semiconductor 34, and can drive the semiconductor 34 to rotate; a groove wheel guide plate 40, the groove wheel guide plate 40 is arranged on the cutting In the cutting chamber 10, a first arcuate guide rail 41 is arranged on the groove wheel guide plate 40, the curvature of the first arcuate guide rail 41 does not exceed 90°, and two first groove wheels 50 are arranged on the first arcuate guide rail 41, and the first groove wheels 50 can move along the first arcuate guide rail 41, and the first groove wheels 50 are located below the rotating fixed table; at least two second groove wheels 52, the second groove wheels 52 are arranged on the second arcuate guide rail 42 and are located above the rotating fixed table, the second arcuate guide rail 42 is arranged cocentrically with the first arcuate guide rail 41, and the second groove wheels 52 cooperate with the first groove wheels 50 for winding the cutting line.

[0045] In the device, the first groove wheel 50 and the second groove wheel 52 cooperate to realize the winding of the cutting line, so that a plurality of parallel cutting lines are arranged below the first groove wheel 50. During the cutting process, the semiconductor 34 is fixed on the rotating fixed table, the rotating fixed table drives the semiconductor 34 to rotate, and the lifting assembly drives the rotating fixed table to descend, so that the semiconductor 34 moves toward the plurality of parallel cutting lines between the two first groove wheels 50 to cut the semiconductor 34. At the same time, the two first groove wheels 50 reciprocate along the first arc-shaped guide rail 41, and the second groove wheel 52 reciprocates along the second arc-shaped guide rail 42, and the movement speed of the first groove wheel 50 and the second groove wheel 52 are consistent.

[0046] In the cutting chamber 10, the cutting liquid is circulated through the cutting liquid inlet and the cutting liquid outlet, so that the contact friction between the cutting line and the crystal is not too large during the cutting process, and the cutting line is cooled at the same time.

[0047] During the cutting process, the movement of the first groove wheel 50 and the second groove wheel 52 can ensure that multiple parallel cutting lines are driven to move in an arc shape, and cooperate with the rotating semiconductor 34 to achieve circular cutting and circular cutting. This setting can improve the uniformity of force on the semiconductor 34 during the cutting process, avoid excessive local force, thereby improving the surface quality of the semiconductor 34, especially reducing the curvature of the semiconductor 34, and improving the uniformity of the distribution of the curvature on the cutting surface. In addition, during the cutting process of the above-mentioned cutting equipment, the movement direction of the semiconductor 34 rotation and the cutting line driven by the first groove wheel 50 can be consistent or inconsistent. When the movement directions are consistent, the cutting force can be buffered, but the cutting efficiency will be reduced. When the movement directions are inconsistent, the cutting efficiency can be improved.

[0048] Specifically, the semiconductor 34 can be fixed on the rotating fixing table in various ways, as long as the semiconductor 34 is fixed during the cutting process, and it is ensured that the semiconductor 34 will not shift during the cutting process and will not have a negative impact on the semiconductor 34, for example, it can be a hot melt adhesive bonding method, or it can be a vacuum adsorption method. In addition, the semiconductor 34 can rotate clockwise or counterclockwise, and the rotation speed can be adjusted according to the cutting process.

[0049] Specifically, the rotating fixed platform can be connected to the fixed plate 20 through the lifting assembly in a manner known in the prior art and does not constitute a limitation to the present application. Figure 3 The lifting assembly can be a telescopic rod 21, and the rotating fixed platform (fixed shaft 33, rotating shaft 32 and bonding plate 31) is fixed on the free end of the telescopic rod 21, and the fixed end of the telescopic rod 21 is fixed above the fixed plate 20. The telescopic rod 21 is extended and retracted to drive the rotating fixed platform to rise and fall. The telescopic end of the telescopic rod 21 is connected to the fixed shaft 33, and the fixed shaft 33 is connected to the rotating shaft 32. The bonding plate 31 is driven to rotate through the rotating shaft 32, and the bonding plate 31 is bonded to the SiC crystal through hot melt adhesive. Other methods in the prior art that can realize driving the rotating fixed platform can also be used, such as through the meshing of gears and racks, electromagnetic drive, etc.

[0050] The above method only needs to ensure that the crystal is in contact with the cutting line during the descending process, so as to achieve the cutting of the entire crystal and will not hinder the movement of the first groove wheel 50 .

[0051] Specifically, the telescopic rod 21 and the rotating shaft 32 may be driven by electric drive, hydraulic drive or other driving methods in the prior art.

[0052] Specifically, the second groove wheel 52 and the second arc guide rail 42 can be located inside the cutting chamber 10 or outside the cutting chamber 10. When they are located outside the cutting chamber 10, a passage needs to be opened at the top of the cutting chamber 10 to facilitate the passage of the cutting line.

[0053] As an implementation manner, a reserved hole 43 is provided at the center of the groove wheel guide plate 40 , and the rotating fixing platform passes through the reserved hole 43 .

[0054] If a groove wheel guide plate 40 without a reserved hole 43 is used, in order to achieve the cutting of the semiconductor 34 and the movement of the first groove wheel 50 on the first arc guide rail 41 without interfering with each other, the groove wheel guide plate 40 needs to be set below the rotating fixed table, and the area should not be too large. In addition, other components need to be additionally set for setting the second arc guide rail 42. Therefore, the reserved hole 43 set on the groove wheel guide plate 40 can set part of the groove wheel guide plate 40 above the rotating fixed table. This setting can increase the area of ​​the groove wheel guide plate 40, thereby improving the stability of the groove wheel guide plate 40 and achieving stable operation of the first groove wheel 50 on the first arc guide rail 41; secondly, the second arc guide rail 42 can also be set on the groove wheel guide plate 40, thereby improving the compactness of the structure of the cutting equipment and reducing the floor space.

[0055] As an embodiment, the second arc guide rail 42 is arranged on the groove wheel guide rail plate 40. Under this arrangement, the second arc guide rail 42 and the second groove wheel 52 are arranged in the cutting chamber 10, which can not only improve the compactness of the structure, but also prevent the cutting line from leaking out of the cutting chamber 10, avoid introducing impurities into the cutting chamber 10, improve the cleanliness during the cutting process, and further improve the cutting quality of the semiconductor 34.

[0056] As an embodiment, the first sheave 50 moves along the first arc-shaped guide rail 41 at an angle of 10° to 80°, preferably 10° to 30°. The second arc-shaped guide rail 42 is connected to the first arc-shaped guide rail 41 to form a circular guide rail.

[0057] The angle of movement of the first groove wheel 50 along the first arc-shaped guide rail 41 is set within this range, firstly, to avoid the first groove wheel 50 from moving too far, thereby avoiding winding of the cutting line or excessive tension changes, and secondly, to increase the movement time of the first groove wheel 50 along the first arc-shaped guide rail 41 in the same direction as much as possible, thereby improving the stability of the cutting line and thus improving the cutting quality. The second arc-shaped guide rail 42 and the first arc-shaped guide rail 41 are connected to form a circular guide rail, which can improve the convenience of the processing equipment. Even without the action of the limiter 53, the first groove wheel 50 can smoothly enter the second arc-shaped guide rail 42 when rotating excessively, thereby increasing the operating reliability of the cutting equipment.

[0058] As an implementation manner, both the first arc-shaped guide rail 41 and the second arc-shaped guide rail 42 are provided with limiters 53 .

[0059] This setting can play the role of instructing the first groove wheel 50 and the second groove wheel 52 to turn. In actual cutting, when the first groove wheel 50 moves on the first arc guide rail 41 and contacts the limiter 53, the limiter 53 can send a signal to the control system. After receiving the signal, the control system can send an instruction to the first groove wheel 50 to make the first groove wheel 50 move in the opposite direction. At this time, the second groove wheel 52 also receives the command and moves in the opposite direction at the same time. Therefore, the setting of the limiter 53 also improves the automatic operation capability of the cutting equipment.

[0060] Specifically, the operation of the limiter 53, the first groove wheel 50, the second groove wheel 52, the rotating fixed platform, and the lifting assembly are all controlled by the control system, and the specific control method is the existing technology, which will not be repeated here.

[0061] Specifically, the first groove wheel 50 can move along the first arc-shaped guide rail 41 in an existing manner in the prior art, for example, it can be electromagnetically driven, a clamping portion engaged with the guide rail is provided at the bottom of the first groove wheel, and the clamping portion reciprocates along the first arc-shaped guide rail 41 under electromagnetic drive, referring to the setting of an automatic induction sliding door; for another example, a rack can be provided on the upper surface of the first arc-shaped guide rail 41, and a gear meshing with the rack is provided at the bottom of the first groove wheel 50, and the gear rotates to realize the movement of the first groove wheel 50 along the first arc-shaped guide rail 41. Similarly, the second groove wheel 52 can move along the second arc-shaped guide rail 42 in the same manner as the first groove wheel 50.

[0062] Example 2

[0063] This embodiment relates to a planetary rotary cutting method for semiconductors, which is performed using the cutting device of Embodiment 1 and includes the following steps:

[0064] (1) Fixing the semiconductor on a rotating fixed table;

[0065] (2) The rotating fixed table drives the semiconductor to rotate, and the semiconductor rotation speed is 0.05-0.1 rad / s. At the same time, the lifting assembly drives the semiconductor to descend, and the semiconductor descends at a speed of 0.002-0.005 mm / min; the two first groove wheels reciprocate along the first arc-shaped guide rail at a speed of 0.025-0.05 rad / s, and the second groove wheel reciprocates along the second arc-shaped guide rail, and the movement speed of the first groove wheel and the second groove wheel is consistent;

[0066] (3) The lifting assembly drives the rotating fixed table to descend so that the semiconductor moves toward the cutting line between the two first groove wheels for semiconductor cutting. The cutting line feed speed is 10 to 14 mm / s and the cutting line tension is 20 to 45 N until the cutting is completed.

[0067] Preferably, when the first groove wheel moves clockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate counterclockwise, and when the first groove wheel moves counterclockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate clockwise.

[0068] The above-mentioned cutting method is used to cut the SiC crystal prepared by the same process in the prior art to obtain a cutting piece. The specific cutting parameters are shown in Table 1. In the column "Are the semiconductor and the first groove wheel rotating in the same direction?" in Table 1, "Yes" represents that the first groove wheel and the semiconductor rotate clockwise or counterclockwise in the same direction, and "No" represents that when the first groove wheel rotates clockwise, the semiconductor rotates counterclockwise, and when the first groove wheel rotates counterclockwise, the semiconductor rotates clockwise. In Table 1, "-" represents the same parameters as 3#.

[0069] Table 1

[0070]

[0071]

[0072] The same grinding and polishing process is used for the above-mentioned cut pieces to obtain SiC wafers, and the uniformity of the double-sided curvature and curvature radius of the SiC wafers is tested. The test results of the SiC wafers are shown in Table 2. The test results in Table 2 refer to the test of several SiC wafers obtained after SiC crystal cutting, grinding and polishing. Each silicon carbide wafer will obtain a parameter value. The "maximum value" represented in Table 2 refers to the maximum value obtained by testing among several SiC wafers obtained from the silicon carbide crystal. Therefore, several silicon carbide wafers obtained from the entire silicon carbide crystal are less than or equal to the values ​​in Table 1, wherein K1 represents the curvature of the C surface of the SiC wafer, and K2 represents the curvature of the Si surface of the SiC wafer. The smaller |K1-K2| is, the more uniform the curvature distribution of the two surfaces of SiC is.

[0073] Table 2

[0074]

[0075] The above is only the embodiment of the present application, and the protection scope of the present application is not limited by these specific embodiments, but is determined by the claims of the present application. For those skilled in the art, the present application can have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the technical ideas and principles of the present application should be included in the protection scope of the present application.

Claims

1. A planetary rotary cutting semiconductor cutting device, characterized in that: include: A cutting chamber, wherein the cutting chamber is provided with a liquid inlet and a liquid outlet, and the interior of the cutting chamber is hollow and contains cutting liquid; A fixing plate, wherein the fixing plate is fixed in the cutting chamber; A rotating fixed platform, the rotating fixed platform is connected to the fixed plate through a lifting assembly, the rotating fixed platform can rise or fall relative to the fixed plate, the rotating fixed platform is used to fix the semiconductor and can drive the semiconductor to rotate; A groove wheel guide plate, wherein the groove wheel guide plate is arranged in the cutting chamber, and the groove wheel guide plate is provided with a first arc-shaped guide rail, the arc of the first arc-shaped guide rail does not exceed 90°, two first groove wheels are arranged on the first arc-shaped guide rail, the first groove wheels can move along the first arc-shaped guide rail, and the first groove wheels are located below the rotating fixed table; At least two second groove wheels, the second groove wheels are arranged on the second arc guide rail and located above the rotating fixed table, the second arc guide rail and the first arc guide rail are arranged cocentrically, and the second groove wheels cooperate with the first groove wheels for winding the cutting line.

2. The planetary rotary cutting semiconductor cutting device according to claim 1, characterized in that: A reserved hole is arranged at the center of the groove wheel guide plate, and the rotating fixing platform passes through the reserved hole.

3. The planetary rotary cutting semiconductor cutting device according to claim 2, characterized in that: The second arc-shaped guide rail is arranged on the groove wheel guide rail plate.

4. The planetary rotary cutting semiconductor cutting device according to claim 3, characterized in that: The first groove wheel moves along the first arc-shaped guide rail at an angle of 10° to 80°, and the second arc-shaped guide rail is connected to the first arc-shaped guide rail to form a circular guide rail.

5. The planetary rotary cutting semiconductor cutting device according to claim 1, characterized in that: A limiter is provided at the junction of the first arc-shaped guide rail and the second arc-shaped guide rail.

6. A planetary rotary cutting method for semiconductors, characterized in that: The method is carried out using the cutting device according to any one of claims 1 to 5, and comprises the following steps: (1) Fixing the semiconductor on a rotating fixed table; (2) The rotating fixed table drives the semiconductor to rotate, the two first groove wheels reciprocate along the first arc-shaped guide rail, and the second groove wheel reciprocates along the second arc-shaped guide rail, and the movement speed of the first groove wheel and the second groove wheel is consistent; (3) The lifting assembly drives the rotating fixed table to descend, so that the semiconductor moves toward the cutting line between the two first groove wheels to perform semiconductor cutting until the cutting is completed.

7. The planetary rotary cutting semiconductor cutting method according to claim 6, characterized in that: The rotation speed of the semiconductor is 0.05-0.1 rad / s, and the downward descending speed of the semiconductor is 0.002-0.005 mm / min.

8. The planetary rotary cutting semiconductor cutting method according to claim 6, characterized in that: The speed at which the first groove wheel reciprocates along the first arc-shaped guide rail is 0.025-0.05 rad / s.

9. The planetary rotary cutting semiconductor cutting method according to claim 6, characterized in that: In step (2), when the first groove wheel moves clockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate counterclockwise, and when the first groove wheel moves counterclockwise along the first arc-shaped guide rail, the rotating fixed platform drives the semiconductor to rotate clockwise.

10. The planetary rotary cutting semiconductor cutting method according to claim 6, characterized in that: The wire tension of the cutting wire is 20-45N, and the wire feed speed of the cutting wire is 10-14mm / s.

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