A method of via formation in a glass substrate

Abstract

The present application belongs to the technical field of semiconductor, and particularly relates to a via hole method of glass substrate, comprising the following steps: a) performing double-sided magnetron sputtering on the glass substrate to plate an acid-resistant protective layer; b) sequentially performing photoresist coating, exposure and development on the double sides of the double-sided plated substrate to form marks and preset holes; c) performing re-plating forming on the substrate treated in step b), and removing the residual photoresist on the surface of the substrate; d) performing double-sided laser drilling on the substrate treated in step c); e) performing etching on the substrate treated in step d) to form via holes of required specifications at the laser drilling positions of the substrate; and f) performing film stripping and re-plating on the substrate treated in step e). The present application utilizes the protection of the double-sided plated layer, so that the glass will not be thinned in the subsequent via hole process, and the reliability of the substrate thickness after the via hole process is ensured; and the plated layer can also prevent the new addition and enlargement of dents and scratches of the glass in the etching process, and the apparent quality of the via hole device is improved.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor technology, and particularly relates to a method for creating through-holes in a glass substrate. Background Technology

[0002] Currently, the main process for fabricating through-hole devices using glass substrates is as follows: first, obtain a glass substrate of a set thickness, then perform laser drilling, and finally etch through-holes to obtain a glass substrate of a certain thickness and through-hole diameter.

[0003] Under the current through-hole method, the through-hole efficiency will vary depending on the substrate material and thickness. The glass substrate will gradually become thinner during the through-hole process, and the thinning thickness (relative to different materials and thicknesses) is a variable that varies. The hole diameter and final thickness after the conventional through-hole method cannot simultaneously meet the needs of different projects. In the actual production process, the hole diameter is limited by the thickness and material, which increases the difficulty of process control.

[0004] In addition, under the current through-hole method, during the etching process, the glass substrate continuously adds and enlarges pits and scratches in the etching solution, resulting in poor substrate surface quality and requiring further repair (more serious ones cannot be repaired), which in turn reduces efficiency and product quality. Summary of the Invention

[0005] In view of this, the purpose of the present invention is to provide a method for through-holes in a glass substrate, which can obtain glass-based through-hole devices with stable substrate thickness and excellent appearance quality.

[0006] This invention provides a method for creating through-holes in a glass substrate, comprising the following steps:

[0007] a) A glass substrate is coated with an acid-resistant protective layer by double-sided magnetron sputtering to obtain a double-sided coated substrate;

[0008] b) Photoresist is applied, exposed and developed on both sides of the double-sided coated substrate in sequence to form a mark and a preset hole, and the mark and preset hole formed on both sides of the substrate correspond to each other.

[0009] c) The substrate processed in step b) is stripped to remove the plating layer in the pre-set holes of the substrate, revealing the glass substrate; then the residual photoresist on the surface of the substrate is removed.

[0010] d) Perform double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step c), with the drilling position located inside the glass substrate hole shape;

[0011] e) Etch the substrate processed in step d) to form through holes of the required specifications at the laser-drilled areas of the substrate.

[0012] f) Remove the coating and plating from the substrate after step e) to remove the residual plating layer on the substrate surface.

[0013] Preferably, in step a), the acid-resistant protective layer comprises one or more of molybdenum, lead, nickel, chromium, and copper.

[0014] Preferably, in step a), the coating thickness of the acid-resistant protective layer is 200–2000 nm.

[0015] Preferably, in step b), the aperture of the preset hole is 20 to 200 μm.

[0016] Preferably, in step b), the overlap error between the corresponding marks and the preset holes formed on both sides of the substrate is ≤10μm.

[0017] Preferably, in step c), the plating stripping process involves immersing the substrate treated in step b) in a plating etching solution at a temperature of 25–30°C for 1–20 minutes.

[0018] Preferably, in step c), the photoresist is removed by ultrasonic cleaning in a stripper solution.

[0019] Preferably, in step e), the etching method is to immerse the substrate treated in step d) in HF etching solution.

[0020] Preferably, in step e), the HF concentration of the HF etching solution is 5-30 wt%, the immersion temperature is 26-35°C, and the etching rate is <3 μm / min.

[0021] Preferably, in step f), the method of removing the film and removing the plating is to immerse the substrate treated in step e) in the plating removal solution, the immersion temperature is 30-45°C, and the immersion time is 10-30 minutes.

[0022] Compared with the prior art, the present invention provides a method for through-holes in a glass substrate, comprising the following steps: a) depositing an acid-resistant protective layer on both sides of the glass substrate by double-sided magnetron sputtering to obtain a double-sided coated substrate; b) sequentially applying photoresist, exposing and developing both sides of the double-sided coated substrate to form a mark and a preset hole, wherein the mark and preset hole formed on both sides of the substrate correspond to each other; c) stripping the substrate processed in step b) to etch away the coating in the preset hole of the substrate, thereby exposing the glass substrate; then removing the residual photoresist on the substrate surface; d) performing double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step c), wherein the drilling position is located within the glass substrate hole shape; e) etching the substrate processed in step d) to form a through-hole of the required size at the laser drilling location of the substrate; f) stripping the substrate processed in step e) to remove the residual coating on the substrate surface. This invention utilizes a double-sided coating for protection, ensuring that the glass does not thin during the subsequent through-hole process, thus guaranteeing the reliability of the substrate thickness after the through-hole is completed. Furthermore, the coating can prevent the addition and amplification of pits and scratches in the glass during the etching process, thereby improving the appearance quality of the through-hole device. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0024] Figure 1 This is a schematic diagram of the through-hole method provided in an embodiment of the present invention. Detailed Implementation

[0025] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0026] This invention provides a method for creating through-holes in a glass substrate, comprising the following steps:

[0027] a) A glass substrate is coated with an acid-resistant protective layer by double-sided magnetron sputtering to obtain a double-sided coated substrate;

[0028] b) Photoresist is applied, exposed and developed on both sides of the double-sided coated substrate in sequence to form a mark and a preset hole, and the mark and preset hole formed on both sides of the substrate correspond to each other.

[0029] c) The substrate processed in step b) is stripped to remove the plating layer in the pre-set holes of the substrate, revealing the glass substrate; then the residual photoresist on the surface of the substrate is removed.

[0030] d) Perform double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step c), with the drilling position located inside the glass substrate hole shape;

[0031] e) Etch the substrate processed in step d) to form through holes of the required specifications at the laser-drilled areas of the substrate.

[0032] f) Remove the coating and plating from the substrate after step e) to remove the residual plating layer on the substrate surface.

[0033] In the method provided by this invention, in step a), the material of the glass substrate includes, but is not limited to, high borosilicate or medium aluminum; the SiO2 content of the high borosilicate material is preferably ≥75wt%, more preferably ≥80wt%, and the B2O3 content is preferably ≥10wt%, more preferably ≥13wt%; the Al2O3 content of the medium aluminum material is preferably 10-20wt%, more preferably 15wt%. In this invention, the size and thickness of the glass substrate are set as needed, and the two surfaces of the glass substrate are named surface A and surface B, respectively.

[0034] In the method provided by this invention, in step a), the acid-resistant protective layer has the ability to resist HF, and its components include one or more of molybdenum, lead, nickel, chromium, and copper. In this invention, the components of the acid-resistant protective layer may further be selected from elemental molybdenum, nickel-copper alloys (such as Ni70Cu30), and nickel-chromium-molybdenum alloys (such as Hastelloy C276).

[0035] In the method provided by the present invention, in step a), the coating thickness of the acid-resistant protective layer is preferably 200-2000 nm, specifically 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1000 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, 1600 nm, 1700 nm, 1800 nm, 1900 nm or 2000 nm.

[0036] In the method provided by the present invention, in step b), the photoresist coating, exposure and development are performed according to a pre-designed drawing.

[0037] In the method provided by the present invention, in step b), the photoresist has certain corrosion resistance; more precisely, the photoresist should have the property of not being corroded by the subsequent etching solution used for plating removal and molding.

[0038] In the method provided by the present invention, in step b), the mark is the positioning mark corresponding to the A surface and B surface formed by exposure and development at the four corners of the substrate.

[0039] In the method provided by the present invention, in step b), the aperture of the preset hole formed by development is set as needed, preferably 20 to 200 μm, specifically 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm or 200 μm.

[0040] In the method provided by the present invention, in step b), the overlap error of the corresponding marks and preset holes formed on the surfaces A and B of the substrate is preferably ≤10μm, specifically within 0μm, 1μm, 2μm, 3μm, 4μm, 5μm, 6μm, 7μm, 8μm, 9μm or 10μm.

[0041] In the method provided by the present invention, the purpose of step c) is to further remove the plating layer in the preset hole of the substrate and expose the glass substrate.

[0042] In the method provided by this invention, in step c), the preferred method for the stripping and forming process is to immerse the substrate treated in step b) in a plating etching solution. During the immersion process, the acid-resistant protective layer inside the preset holes of the substrate is etched away by the etching solution, exposing the glass substrate. The acid-resistant protective layer outside the preset holes is protected by photoresist and will not react with the etching solution. In this invention, the plating etching solution is selected according to the acid-resistant protective layer plated in the previous step. For example, when the acid-resistant protective layer is a nickel-copper alloy, a copper chloride-based etching solution can be selected. The immersion temperature is preferably 25-30°C, specifically 25°C, 26°C, 27°C, 28°C, 29°C, or 30°C. The immersion time is preferably 1-20 minutes, specifically 1 minute, 2 minutes, 3 minutes, 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, 10 minutes, 11 minutes, 12 minutes, 13 minutes, 14 minutes, 15 minutes, 16 minutes, 17 minutes, 18 minutes, 19 minutes, or 20 minutes.

[0043] In the method provided by the present invention, in step c), the photoresist is removed by ultrasonic cleaning in a photoresist remover solution; the photoresist remover solution is preferably an alkaline photoresist remover solution, and its components preferably include NaOH.

[0044] In the method provided by the present invention, in step d), the laser drilling position is preferably the center of the hole in the glass substrate.

[0045] In the method provided by the present invention, in step e), the etching method is preferably to immerse the substrate treated in step d) in an HF etching solution; wherein, the HF concentration of the HF etching solution is preferably 5-30 wt%, specifically 5 wt%, 7 wt%, 10 wt%, 12 wt%, 15 wt%, 17 wt%, 20 wt%, 23 wt%, 25 wt%, 27 wt%, or 30 wt%; the immersion temperature is preferably 26-35°C, specifically 26°C, 27°C, 28°C, 29°C, 30°C, 31°C, 32°C, 33°C, 34°C, or 35°C; the etching rate is preferably <3 μm / min, specifically 2.5 μm / min.

[0046] In the method provided by this invention, in step f), the preferred method for removing the film and removing the plating is to immerse the substrate treated in step e) in a plating removal solution; wherein, the plating removal solution is selected according to the acid-resistant protective layer deposited in the previous step, such as when the acid-resistant protective layer is a nickel-copper alloy, a copper chloride-based etching solution can be selected; the immersion temperature is preferably 30-45°C, specifically 30°C, 31°C, 32°C, 33°C, 34°C, 35°C, 36°C, 37°C, 38°C, 39°C, 40°C, 41°C, 42°C, 43°C, 44°C or 45°C; the immersion time is preferably 10-30 min, specifically 10 min, 11 min, 12 min, 13 min, 14 min, 15 min, 16 min, 17 min, 18 min, 19 min, 20 min, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min or 30 min.

[0047] In the method provided by this invention, in step f), the stripping solution can specifically be a mixture of hydrochloric acid and hydrogen peroxide, which can simultaneously remove residual photoresist and acid-resistant protective layer from the substrate surface. Specifically, the mixture of hydrochloric acid and hydrogen peroxide can be prepared from 5 parts by weight (37 wt%) of hydrochloric acid, 2 parts by weight (30 wt%) of hydrogen peroxide, and 3 parts by weight of water.

[0048] This invention utilizes a double-sided coating for protection, ensuring that the glass does not thin during the subsequent through-hole process, thus guaranteeing the reliability of the substrate thickness after the through-hole is completed. Furthermore, the coating can prevent the addition and amplification of pits and scratches in the glass during the etching process, thereby improving the appearance quality of the through-hole device.

[0049] For clarity, the following examples and comparative models will be used to provide a detailed description.

[0050] Example 1

[0051] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0052] This embodiment proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements. (Refer to...) Figure 1 This includes the following steps:

[0053] 1) Provide a glass substrate, which is made of high borosilicate material (80wt% SiO2, 13wt% B2O3). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.5mm, and the actual measured thickness of the glass substrate used is 0.501 to 0.506mm.

[0054] 2) A double-sided magnetron sputtering deposition of an acid-resistant protective layer is performed on the glass substrate to obtain a double-sided coated substrate. The acid-resistant protective layer is composed of a nickel-copper alloy (Ni70Cu30) and has a thickness of 500 nm.

[0055] 3) The double-sided coated substrate is sequentially coated with photoresist, exposed, and developed to form marks and preset holes. The marks and preset holes formed on the A and B surfaces of the substrate correspond to each other. The photoresist used is a wet-film photoresist, whose main components are photosensitive resin, photoinitiator, and solvent. The marks are positioning marks formed at the four corners of the substrate on the A and B surfaces by exposure and development. The aperture of the preset holes is 50 μm. The overlap error between the corresponding marks and preset holes formed on the A and B surfaces of the substrate is within 3 μm.

[0056] 4) The substrate treated in step 3) is immersed in a plating etching solution to remove the plating layer in the pre-set holes, revealing the glass substrate. Subsequently, the substrate is ultrasonically cleaned in a resist remover to remove residual photoresist from the substrate surface. The plating etching solution used is a copper chloride-based etching solution; the immersion temperature is 28°C, and the immersion time is 10 minutes; the resist remover used is an alkaline resist remover, the main component of which is NaOH.

[0057] 5) Perform double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step 4). The drilling position is located at the center of the glass substrate hole shape, and the spot diameter is controlled to be 5μm.

[0058] 6) The substrate treated in step 5) is immersed in HF etching solution for etching, so that through holes of the required specifications are formed at the laser-drilled areas of the substrate. The HF etching solution used has an HF concentration of 10wt%, an etching temperature of 30℃, and an etching rate of 2.5μm / min.

[0059] 7) Immerse the substrate treated in step 5) in a stripping solution to remove the residual plating layer from the substrate surface. The stripping solution consists of 5 parts by weight of 37 wt% hydrochloric acid, 2 parts by weight of 30 wt% hydrogen peroxide, and 3 parts by weight of water; the stripping temperature is 45°C, and the stripping time is 15 min.

[0060] Example 2

[0061] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0062] This embodiment proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements. (Refer to...) Figure 1 This includes the following steps:

[0063] 1) Provide a glass substrate, which is made of medium aluminum (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.5mm, and the actual measured thickness of the glass substrate used is 0.505~0.511mm.

[0064] 2) A double-sided magnetron sputtering deposition of an acid-resistant protective layer is performed on the glass substrate to obtain a double-sided coated substrate. The acid-resistant protective layer is composed of a nickel-copper alloy (Ni70Cu30) and has a thickness of 500 nm.

[0065] 3) The double-sided coated substrate is sequentially coated with photoresist, exposed, and developed to form marks and preset holes. The marks and preset holes formed on the A and B surfaces of the substrate correspond to each other. The photoresist used is a wet-film photoresist, whose main components are photosensitive resin, photoinitiator, and solvent. The marks are positioning marks formed at the four corners of the substrate on the A and B surfaces by exposure and development. The aperture of the preset holes is 70 μm. The overlap error between the corresponding marks and preset holes formed on the A and B surfaces of the substrate is within 3 μm.

[0066] 4) The substrate treated in step 3) is immersed in a plating etching solution to remove the plating layer in the pre-set holes, revealing the glass substrate. Subsequently, the substrate is ultrasonically cleaned in a resist remover to remove residual photoresist from the substrate surface. The plating etching solution used is a copper chloride-based etching solution; the immersion temperature is 28°C, and the immersion time is 10 minutes; the resist remover used is specifically an alkaline resist remover, the main component of which is NaOH.

[0067] 5) Perform double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step 4). The drilling position is located at the center of the glass substrate hole shape, and the spot diameter is controlled to be 5μm.

[0068] 6) The substrate treated in step 5) is immersed in HF etching solution for etching, so that through-holes of the required specifications are formed at the laser-drilled areas of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28℃, and an etching rate of 2.5μm / min.

[0069] 7) Immerse the substrate treated in step 5) in a stripping solution to remove the residual plating layer from the substrate surface. The stripping solution consists of 5 parts by weight of 37 wt% hydrochloric acid, 2 parts by weight of 30 wt% hydrogen peroxide, and 3 parts by weight of water; the stripping temperature is 45°C, and the stripping time is 15 min.

[0070] Comparative Example 1

[0071] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0072] This comparative example proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements, comprising the following steps:

[0073] 1) Provide a glass substrate, which is made of high borosilicate material (80wt% SiO2, 13wt% B2O3). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.5mm, and the actual measured thickness of the glass substrate used is 0.505~0.511mm.

[0074] 2) Based on the pre-drawn drawings, the glass substrate is subjected to double-sided laser drilling, and the aperture of the laser spot is controlled to be 5μm.

[0075] 3) The substrate treated in step 2) is immersed in HF etching solution for etching, so that through holes of the required specifications are formed at the laser-drilled areas of the substrate. The HF etching solution used has an HF concentration of 10wt%, an etching temperature of 30℃, and an etching rate of 2.5μm / min.

[0076] Comparative Example 2

[0077] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0078] This comparative example proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements, comprising the following steps:

[0079] 1) Provide a glass substrate, which is made of medium aluminum material (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.5mm, and the actual measured thickness of the glass substrate used is 0.501~0.504mm.

[0080] 2) Based on the pre-drawn drawings, the glass substrate is subjected to double-sided laser drilling, and the aperture of the laser spot is controlled to be 5μm.

[0081] 3) The substrate treated in step 2) is immersed in HF etching solution for etching, so that through-holes of the required specifications are formed at the laser-drilled areas of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28℃, and an etching rate of 2.5μm / min.

[0082] Comparative Example 3

[0083] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0084] This comparative example proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements, comprising the following steps:

[0085] 1) Provide a glass substrate, which is made of medium aluminum (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.7mm, and the actual measured thickness of the glass substrate used is 0.703 to 0.707mm.

[0086] 2) Based on the pre-drawn drawings, the glass substrate is subjected to double-sided laser drilling, and the aperture of the laser spot is controlled to be 5μm.

[0087] 3) The substrate treated in step 2) is immersed in HF etching solution for etching, so that through holes of the required specifications are formed at the laser-drilled areas of the substrate (controlled by the inner diameter of the hole). The HF concentration of the HF etching solution used is 5wt%, the etching temperature is 28℃, and the etching rate is 2.5μm / min.

[0088] Comparative Example 4

[0089] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0090] This comparative example proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements, comprising the following steps:

[0091] 1) Provide a glass substrate, which is made of medium aluminum (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 0.7mm, and the actual measured thickness of the glass substrate used is 0.704 to 0.709mm.

[0092] 2) Based on the pre-drawn drawings, the glass substrate is subjected to double-sided laser drilling, and the aperture of the laser spot is controlled to be 5μm.

[0093] 3) The substrate treated in step 2) is immersed in HF etching solution for etching, so that through holes of the required specifications are formed at the laser-drilled areas of the substrate (controlled by thickness). The HF concentration of the HF etching solution used is 5wt%, the etching temperature is 28℃, and the etching rate is 2.5μm / min.

[0094] Comparative Example 5

[0095] The required specifications are: substrate thickness after through-hole: 0.5±0.02mm; inner / outer hole diameter: ≥50 / ≤200μm.

[0096] This comparative example proposes a method for creating through-holes in a glass substrate based on the aforementioned requirements, comprising the following steps:

[0097] 1) Provide a glass substrate, which is made of medium aluminum (60wt% SiO2, 15wt% Al2O3, 15wt% Na2O, 7wt% K2O). The upper and lower surfaces of the substrate are named surface A and surface B, respectively. Set the initial thickness of the glass substrate according to the specifications required by the project. In this embodiment, the set thickness is 1.0mm, and the actual measured thickness of the glass substrate used is 1.004~1.010mm.

[0098] 2) Based on the pre-drawn drawings, the glass substrate is subjected to double-sided laser drilling.

[0099] 3) The substrate treated in step 2) is immersed in HF etching solution for etching, so that through-holes of the required specifications are formed at the laser-drilled areas of the substrate. The HF etching solution used has an HF concentration of 5wt%, an etching temperature of 28℃, and an etching rate of 2.5μm / min.

[0100] Effect evaluation

[0101] The key preparation conditions and corresponding product information of Examples 1-2 and Comparative Examples 1-5 are summarized in the table below:

[0102]

[0103] As can be seen from the table above, in Examples 1-2 of the present invention, the thickness, inner and outer diameters, and product appearance after through-hole penetration all meet the standards. In Comparative Examples 1-3, the thickness after through-hole penetration does not meet the standards; in Comparative Example 4, the through-hole effect does not meet the standards; and in Comparative Example 5, increasing the initial thickness makes the thickness after through-hole penetration acceptable, but the outer diameter exceeds the standard. The experimental comparison shows that the present invention has superior performance in controlling through-hole thickness and product appearance.

[0104] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for creating through-holes in a glass substrate, characterized in that, Includes the following steps: a) A glass substrate is coated with an acid-resistant protective layer by double-sided magnetron sputtering to obtain a double-sided coated substrate; In step a), the acid-resistant protective layer is composed of a nickel-copper alloy or a nickel-chromium-molybdenum alloy; b) Photoresist is applied, exposed and developed on both sides of the double-sided coated substrate in sequence to form a mark and a preset hole, and the mark and preset hole formed on both sides of the substrate correspond to each other. c) The substrate processed in step b) is stripped to remove the plating layer in the pre-set holes of the substrate, thus revealing the glass substrate. Then, the residual photoresist on the substrate surface is removed; In step c), the plating stripping process involves immersing the substrate treated in step b) in a plating etching solution. d) Perform double-sided laser drilling on the substrate with the etched glass substrate hole shape obtained in step c), with the drilling position located inside the glass substrate hole shape; e) Etch the substrate processed in step d) to form through holes of the required specifications at the laser-drilled areas of the substrate; f) Remove the coating and plating from the substrate after step e) to remove the residual plating layer on the substrate surface; In step b), the photoresist has the property of not being corroded by the etching solution used in the plating removal process in step c).

2. The through-hole method according to claim 1, characterized in that, In step a), the coating thickness of the acid-resistant protective layer is 200~2000nm.

3. The through-hole method according to claim 1, characterized in that, In step b), the aperture of the preset hole is 20~200μm.

4. The through-hole method according to claim 1, characterized in that, In step b), the overlap error between the corresponding marks and the preset holes formed on both sides of the substrate is ≤10μm.

5. The through-hole method according to claim 1, characterized in that, In step c), the soaking temperature is 25~30℃ and the soaking time is 1~20min.

6. The through-hole method according to claim 1, characterized in that, In step c), the photoresist is removed by ultrasonic cleaning in a stripper solution.

7. The through-hole method according to claim 1, characterized in that, In step e), the etching method is to immerse the substrate treated in step d) in HF etching solution.

8. The through-hole method according to claim 7, characterized in that, In step e), the HF concentration of the HF etching solution is 5~30wt%, the immersion temperature is 26~35℃, and the etching rate is <3μm / min.

9. The through-hole method according to claim 1, characterized in that, In step f), the method of removing the film and removing the plating is to immerse the substrate treated in step e) in the plating removal solution, the immersion temperature is 30~45℃, and the immersion time is 10~30min.

Images