Control method of semiconductor process equipment and semiconductor process equipment

Abstract

The invention discloses a control method of semiconductor process equipment and the semiconductor process equipment. The method comprises the following steps: after a process task associated with a plurality of process paths is started, dividing the process task into a plurality of subtasks which are executed in series according to the plurality of process paths; sequentially starting a plurality of subtasks which are executed in series, after each subtask is started, issuing a chamber preheating action to a process chamber corresponding to the subtask, and setting delay time for the process chamber to execute the chamber preheating action; controlling the process chamber to execute a chamber preheating action when the corresponding delay time is reached; and the materials corresponding to the sub-tasks are transmitted to the corresponding process chambers where the chamber preheating actions are executed to be subjected to the process processing flow. According to the method and the device, the process task is divided into the plurality of serially executed sub-tasks according to the plurality of process paths, and the delay time of the cavity preheating action is independently set for each sub-task, so that the first effect is more completely avoided, and the process effect is improved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular, relates to a control method for semiconductor process equipment and semiconductor process equipment. Background Art

[0002] In semiconductor process equipment such as chemical vapor deposition (CVD) equipment, temperature is one of the important factors that determine the process effect. When the process chamber is idle for a period of time without executing the process, the temperature of the base will drop. At this time, when the first piece of material enters the process chamber, the coating may be thin. This phenomenon is called the first piece effect.

[0003] In order to solve the first-piece effect of the process chamber, the relevant technology usually performs a chamber preheating (CleanOngo) action on the process chamber before the process task is executed, and then the process chamber transfers the material to execute the process processing flow. Specifically, when the process task is started, the CleanOngo action is issued to all process chambers that need to execute the CleanOngo action. The issued CleanOngo action is not executed immediately. The time for delaying the execution of CleanOngo is set for each process chamber separately. After the process chamber reaches the set delay time, it actually starts to execute the CleanOngo action, and after the CleanOngo is completed, the material is quickly transferred to the process chamber to execute the process processing flow. The delay time is determined by the chamber type, the processing time of the process chamber, and the robot film transfer action time VT. For example, in the process path LL->Ch1 ->Ch2 ->LL, the deposition (nuc) process chamber Ch1 is in step 1, and the nucleation (bulk) process chamber Ch2 is in step 2. For the nuc process chamber Ch1, the delay time for executing the CleanOngo action is set to 0. For bulk process chamber Ch2, the delay time for executing the CleanOngo action is set to the processing time of nuc process chamber Ch1 + VT. However, the above solution is only applicable to the scenario of a single process path task. For multi-process path tasks, the delay time calculation for executing the CleanOngo action is not accurate. The process chamber will still be idle for too long before the material is introduced, and the first piece effect cannot be completely avoided, affecting the process effect. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a control method for semiconductor process equipment and semiconductor process equipment to solve the problem in the related art that for multi-process path tasks, the delay time calculation for executing the CleanOngo action is not accurate, the first-piece effect cannot be completely avoided, and the process effect is affected.

[0005] To achieve the above objectives, the present application embodiment adopts the following technical solutions: In a first aspect, an embodiment of the present application provides a control method for semiconductor process equipment, comprising: after a process task associated with multiple process paths is started, dividing the process task into multiple sub-tasks to be executed serially according to the multiple process paths; starting the multiple sub-tasks to be executed serially in sequence, and after each of the sub-tasks is started, sending a chamber preheating action to a process chamber in the process path corresponding to the sub-task, and setting a delay time for the process chamber to execute the chamber preheating action; controlling the process chamber to execute the chamber preheating action when the corresponding delay time is reached; and transferring the material corresponding to the sub-task to the corresponding process chamber that has executed the chamber preheating action for process processing.

[0006] In a second aspect, an embodiment of the present application provides a semiconductor process equipment, comprising: a controller and multiple process chambers, wherein the controller is arranged in a host computer and / or a slave computer of the semiconductor process equipment, and the controller comprises at least one processor and at least one memory, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the steps of the control method of the semiconductor process equipment as described in the embodiment of the first aspect of the present application are implemented.

[0007] At least one of the above technical solutions adopted in the embodiments of the present application can achieve the following beneficial effects: After a process task associated with multiple process paths is started, the embodiment of the present application divides the process task into multiple serially executed subtasks according to the multiple process paths, starts the multiple serially executed subtasks in sequence, and after each subtask is started, sends the chamber preheating action to the process chamber in the process path corresponding to the subtask, sets a delay time for the process chamber to execute the chamber preheating action, controls the process chamber to execute the chamber preheating action when the corresponding delay time is reached, and transfers the material corresponding to the subtask to the corresponding process chamber that has completed the chamber preheating action for process processing. For a process task associated with multiple process paths, the embodiment of the present application divides the process task into multiple serially executed subtasks according to the multiple process paths, and sets the delay time of the chamber preheating action for each subtask separately, so that the delay time setting of the chamber preheating action is more accurate, avoiding the phenomenon that the process chamber is idle for too long before the material is introduced, thereby more completely avoiding the first-piece effect and improving the process effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings: Figure 1 A schematic flow chart of a control method for semiconductor process equipment provided by one embodiment of the present application; Figure 2 A schematic diagram of the overall flow of a control method for semiconductor process equipment provided by another embodiment of the present application; Figure 3 A schematic structural diagram of a semiconductor process equipment provided for one embodiment of the present application. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in combination with the specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0010] The terms "first", "second", etc. in this application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here. In addition, the "and / or" in this application represents at least one of the connected objects, and the character " / " generally represents that the front and back associated objects are in an "or" relationship. It should be noted that the data involved in this application are all obtained on the premise of obtaining user authorization.

[0011] In semiconductor process equipment such as CVD equipment, temperature is one of the important factors that determine the process effect. When the process chamber is idle for a period of time without executing the process, the temperature of the susceptor will drop. At this time, when the first piece of material enters the process chamber, the coating may be thin. This phenomenon is called the first piece effect.

[0012] For the dual-temperature process, the process path includes two types: deposition (nuc) process chamber and nucleation (bulk) process chamber. The material first passes through process chamber 1 (nuc chamber) for process processing, and then is transferred to process chamber 2 (bulk chamber) for unified processing. When the first piece of material is transferred to process chamber 1 and process chamber 2, it is necessary to ensure that the chamber idle time is short to keep the temperature drop from being obvious, avoid the first piece effect, and affect the process effect.

[0013] In order to solve the first-piece effect of the process chamber, the relevant technology usually performs the CleanOngo action on the process chamber before the process task is executed, and then the process chamber transfers the material to execute the process processing flow. Specifically, when the process task is started, the CleanOngo action is issued to all process chambers that need to execute the CleanOngo action. The issued CleanOngo action is not executed immediately. The time for delaying the execution of CleanOngo is set for each process chamber separately. After the process chamber reaches the set delay time, it actually starts to execute the CleanOngo action, and after the CleanOngo is completed, the material is quickly transferred to the process chamber to execute the process processing flow. The delay time of each process chamber is jointly determined by the chamber type, the processing time of the process chamber, and the robot film transfer action time VT. When the process task is started, check whether each process chamber in the process path of the process task meets the CleanOngo condition, that is, whether the current process task is the first task executed after the process chamber is idle. If the process chamber meets the CleanOngo condition, the process chamber is added to the specified set AboutToCleanChambers<step number+sequence number, chamber name>, where the step number is the step number of the process chamber in the process path, and the sequence number is the sequence number of the process chamber in the corresponding step.

[0014] For example, in the process path LL->Ch1 ->Ch2 ->LL, process chamber Ch1 is a nuc process chamber, which is in step 1 and is the first nuc process chamber to perform the CleanOngo action. Process chamber Ch2 is a bulk process chamber, which is in step 2 and is the first bulk process chamber to perform the CleanOngo action. For nuc process chamber Ch1, the delay time for performing the CleanOngo action is affected by the robot sheet transfer action time VT (i.e., the time from when the robot puts the last sheet of material into the process chamber to when the robot takes out the second sheet from the LL module and transfers it into the process chamber). The delay time for performing the CleanOngo action is set to 0, that is, the CleanOngo action of the first nuc process chamber is performed when the process task is started. For bulk process chamber Ch2, the delay time for performing the CleanOngo action is set to the processing time of nuc process chamber Ch1 + VT.

[0015] For another example, in the process path LL->Ch1 / Ch3 / Ch5->Ch2 / Ch4 / Ch6->LL, process chambers Ch1, Ch3 and Ch5 are a group of nuc process chambers, which are in parallel step 1. Process chamber Ch1 is the first nuc process chamber to perform the CleanOngo action, process chamber Ch3 is the second nuc process chamber to perform the CleanOngo action, and process chamber Ch5 is the third nuc process chamber to perform the CleanOngo action. Process chambers Ch2, Ch4 and Ch6 are a group of bulk process chambers, which are in parallel step 2. Process chamber Ch2 is the first bulk process chamber to perform the CleanOngo action, process chamber Ch4 is the second bulk process chamber to perform the CleanOngo action, and process chamber Ch6 is the third bulk process chamber to perform the CleanOngo action. For the first nuc process chamber Ch1, the delay time for executing the CleanOngo action is set to 0, that is, when the process task is started, the CleanOngo action of the first nuc process chamber will be executed. For the second nuc process chamber Ch3, the delay time for executing the CleanOngo action is set to VT. For the third nuc process chamber Ch5, the delay time for executing the CleanOngo action is set to 2*VT. For the first bulk process chamber Ch2, the delay time for executing the CleanOngo action is set to the processing time of the nuc process chamber Ch1 + VT. For the second bulk process chamber Ch4, the delay time for executing the CleanOngo action is set to the processing time of the nuc process chamber Ch3 + 2*VT. For the third bulk process chamber Ch6, the delay time for executing the CleanOngo action is set to the processing time of the nuc process chamber Ch5 + 3*VT.

[0016] Subsequently, the difference between the current time and the start time of the process task is continuously checked. Once the time difference satisfies the delay time of the process chamber, the process chamber starts to execute the CleanOngo action until all process chambers in the process path have completed the CleanOngo action.

[0017] When executing the process task in the above scenario, all process chambers in the process path will execute a CleanOngo action. The nuc process chamber and bulk process chamber will each perform a delayed waiting execution of the CleanOngo action according to the set delay time, so that the time when each process chamber completes the CleanOngo action is staggered, thereby ensuring that the material can be transferred to the process chamber as soon as possible after the process chamber completes the CleanOngo action to avoid the first-piece effect.

[0018] In the process task execution, there is actually a situation where one task is associated with multiple process paths, so that the materials in a load port can execute different process paths according to the set process path. This task is called a 1C multi-P task (1C refers to a total scheduling unit, and multi-P refers to multiple sub-process paths, that is, multiple sequences). Each process path is associated with different materials.

[0019] The above solution is only applicable to the scenario of a single process path task. For multi-process path tasks, namely 1C multi-P tasks, the delay time calculation for executing the CleanOngo action is not accurate. The process chamber will still be idle for too long before the material is introduced, and the first-piece effect cannot be completely avoided, which affects the process effect.

[0020] For example, the process task Job1 is associated with multiple process paths, namely process path 1: LL->Ch1 ->LL and process path 2: LL->Ch1 ->Ch2 ->LL, and the associated materials are material 1 and material 2. Process chamber Ch1 is a nuc process chamber, and process chamber Ch2 is a bulk process chamber. The start time of Job1 is recorded as T0. After Job1 is started, the CleanOngo action is issued to process chambers Ch1 and Ch2, and the delay time of the CleanOngo action is calculated and stored in the set NucOngoChambers<delay time, process chamber name> or BulkOngoChambers<delay time, process chamber name>. Among them, {(0, Ch1)} is stored in NucOngoChambers, and {(Ch1 process chamber processing time + VT, Ch2)} is stored in BulkOngoChambers.

[0021] During the execution of Job1, the end time of the CleanOngo action in process chamber Ch2 should be: T0 + the processing time of material 1 in process chamber Ch1 + VT + the time of executing the CleanOngo action. Material 2 needs to wait for the material 1 to complete the process in process chamber Ch1 before being transferred to process chamber Ch1 to execute the process flow. After the process is completed, it is transferred out from Ch1 and then transferred to Ch2 through the robot to execute the process flow. From the above, it can be seen that the time point when material 2 is transferred to process chamber Ch2 should be: T0 + the time of executing the CleanOngo action + the processing time of material 1 in process chamber Ch1 + the processing time of material 2 in process chamber Ch1 + VT. In summary, there is a time interval between the time point when the process chamber Ch2 finishes the CleanOngo action (T0 + processing time of material 1 in process chamber Ch1 + VT + time to execute the CleanOngo action) and the time point when material 2 is transferred into process chamber Ch2 (T0 + time to execute the CleanOngo action + processing time of material 1 in process chamber Ch1 + processing time of material 2 in process chamber Ch1 + VT): the processing time of material 2 in process chamber Ch1, that is, process chamber Ch2 has been idle for a period of time before the material is first transferred into it, and the idle time is consistent with the processing time of process chamber Ch1, and the first piece effect occurs in process chamber Ch2.

[0022] To this end, the present application proposes a control method for semiconductor process equipment, semiconductor process equipment and storage medium to solve the problem in the related technology that for multi-process path tasks, the delay time calculation for executing the CleanOngo action is not accurate, and the first-piece effect cannot be completely avoided, affecting the process effect.

[0023] The technical solutions provided by various embodiments of the present application are described in detail below in conjunction with the accompanying drawings.

[0024] Figure 1 A flow chart of a control method for semiconductor process equipment provided by one embodiment of the present application. Figure 1 As shown, the control method of the semiconductor process equipment in the embodiment of the present application may specifically include the following steps: S101, after a process task associated with multiple process paths is started, the process task is divided into multiple subtasks executed in series according to the multiple process paths.

[0025] In the embodiment of the present application, the execution subject of the control method of the semiconductor process equipment of the embodiment of the present application is a controller, which can be set in the upper computer and / or the lower computer of the semiconductor process equipment (such as CVD equipment, etc.).

[0026] For a process task associated with multiple process paths, i.e., a 1C multi-P process task, after the process task is started, the process task is divided into multiple subtasks executed in series according to the multiple process paths. For example, process task Job1 is associated with two process paths, namely, process path Route1: LL->Ch1 / Ch3 / Ch5 ->LL, and process path Route2: LL->Ch1 / Ch3 / Ch5->Ch2 / Ch4 / Ch6->LL. After Job1 is started, Job1 is divided into two subtasks executed in series according to process paths Route1 and Route2, namely, subtask 1 and subtask 2, wherein subtask 1 corresponds to process path Route1, and subtask 2 corresponds to process path Route2. Subtask 1 and subtask 2 are executed in series, i.e., subtask 1 is executed first, and subtask 2 is executed after subtask 1 is executed.

[0027] The materials associated with process route Route1 are material 1, material 2 and material 3, then the materials corresponding to subtask 1 are material 1, material 2 and material 3. The materials associated with process route Route2 are material 4, material 5 and material 6, then the materials corresponding to subtask 2 are material 4, material 5 and material 6.

[0028] It should be noted here that after the process task is started, a path chamber set can be constructed, which includes the identifiers of multiple process paths and the identifiers of the process chambers in each process path corresponding to the identifiers of each process path. That is, a ChamberInSqc set is constructed to record the identifiers of all process paths in the process task and the identifiers of the process chambers associated with the process paths. Taking the above example, the constructed ChamberInSqc set is {(Route1, Ch1 / Ch3 / Ch5), (Route2, Ch1 / Ch3 / Ch5+Ch2 / Ch4 / Ch6)}.

[0029] After the process task is started, a path material set can also be constructed. The path chamber set includes the identifiers of multiple process paths and the materials associated with each process path corresponding to the identifiers of each process path. That is, a WaferInSqc set is constructed to record the identifiers of all process paths in the process task and the materials associated with the process paths. Taking the above example, the constructed WaferInSqc set is {(Route1, material 1+material 2+material 3), (Route2, material 4+material 5+material 6)}.

[0030] S102, sequentially starting a plurality of serially executed subtasks, and after each subtask is started, sending a chamber preheating action to a process chamber in a process path corresponding to the subtask, and setting a delay time for the process chamber to execute the chamber preheating action.

[0031] In the embodiment of the present application, still taking the above example, subtask 1 and subtask 2 are started in sequence. After each subtask is started, the process chamber in the process path corresponding to each subtask can be determined according to the path chamber set.

[0032] After subtask 1 is started, according to the path chamber set, i.e., ChamberInSqc set {(Route1, Ch1 / Ch3 / Ch5), (Route2, Ch1 / Ch3 / Ch5+Ch2 / Ch4 / Ch6)}, it is determined that the process chambers in the process path Route1 corresponding to subtask 1 are Ch1, Ch3, and Ch5, and the chamber preheating CleanOngo action is sent to the process chambers Ch1, Ch3, and Ch5 in the process path Route1 corresponding to subtask 1, and the delay time for the process chambers Ch1, Ch3, and Ch5 to execute the CleanOngo action is set. After subtask 2 is started, according to the path chamber set, i.e., ChamberInSqc set {(Route1, Ch1 / Ch3 / Ch5), (Route2, Ch1 / Ch3 / Ch5+Ch2 / Ch4 / Ch6)}, it is determined that the process chambers in the process path Route2 corresponding to subtask 2 are Ch1, Ch3, Ch5, Ch2, Ch4, and Ch6, and the chamber preheating CleanOngo action is sent to the process chambers Ch1, Ch3, Ch5, Ch2, Ch4, and Ch6 in the process path Route2 corresponding to subtask 2, and the delay time for the process chambers Ch1, Ch3, Ch5, Ch2, Ch4, and Ch6 to execute the CleanOngo action is set.

[0033] Among them, the delay time for the process chamber to perform the CleanOngo action can be set through the following steps: obtain the step number of the process chamber in the corresponding process path and the sequence number in the step corresponding to the step number; determine the delay time corresponding to the process chamber according to the step number and the sequence number.

[0034] Furthermore, the above step of “determining the delay time corresponding to the process chamber according to the step number and the sequence number” may specifically include the following steps: using the following formula to determine the delay time corresponding to the process chamber: Delay time = (step number - 1) * processing time of the process chamber corresponding to (step number - 1) + (step number + sequence number - 2) * robot film transfer action time VT.

[0035] In some embodiments, multiple process paths associated with a process task may include a first path and a second path, the first path including a first process chamber with a step number of 1 and a sequence number of 1, a third process chamber with a step number of 1 and a sequence number of 2, and a fifth process chamber with a step number of 1 and a sequence number of 3, the second path including a first process chamber with a step number of 1 and a sequence number of 1, a third process chamber with a step number of 1 and a sequence number of 2, and a fifth process chamber with a step number of 1 and a sequence number of 3, as well as a second process chamber with a step number of 2 and a sequence number of 1, a fourth process chamber with a step number of 2 and a sequence number of 2, and a sixth process chamber with a step number of 2 and a sequence number of 3. At this time, the above step of "determining the delay time corresponding to the process chamber according to the step number and the sequence number" may specifically include The method includes the following steps: determining that the delay time corresponding to the first process chamber in the first path is 0; determining that the delay time corresponding to the third process chamber in the first path is VT; determining that the delay time corresponding to the fifth process chamber in the first path is 2*VT; determining that the delay time corresponding to the first process chamber in the second path is 0; determining that the delay time corresponding to the third process chamber in the second path is VT; determining that the delay time corresponding to the fifth process chamber in the second path is 2*VT; determining that the delay time corresponding to the second process chamber in the second path is the processing time of the first process chamber; determining that the delay time corresponding to the fourth process chamber in the second path is the processing time of the third process chamber + VT; determining that the delay time corresponding to the sixth process chamber in the second path is the processing time of the fifth process chamber + 2*VT.

[0036] Further, when the process task is a dual-temperature process task, the first process chamber, the third process chamber and the fifth process chamber are deposition (nuc) process chambers, and the second process chamber, the fourth process chamber and the sixth process chamber are nucleation (bulk) process chambers.

[0037] Specifically, still taking the above example, after subtask 1 is started, the CleanOngo action is sent to process chambers Ch1, Ch3 and Ch5 in process route Route1, and the delay time of process chamber Ch1 (step number is 1, sequence number is 1) is set to 0+0=0, the delay time of process chamber Ch3 (step number is 1, sequence number is 2) is set to 0+VT=VT, and the delay time of process chamber Ch5 (step number is 1, sequence number is 3) is set to 0+2*VT=2*VT.

[0038] After subtask 2 is started, the CleanOngo action is sent to process chambers Ch1, Ch3, Ch5, Ch2, Ch4 and Ch6 in process route Route2, and the delay time of process chamber Ch1 (step number 1, sequence number 1) is set to 0+0=0, the delay time of process chamber Ch3 (step number 1, sequence number 2) is set to 0+VT=VT, the delay time of process chamber Ch5 (step number 1, sequence number 3) is set to 0+2*VT=2*VT, the delay time of process chamber Ch2 (step number 2, sequence number 1) is set to the processing time of process chamber Ch1 + VT, the delay time of process chamber Ch4 (step number 2, sequence number 2) is set to the processing time of process chamber Ch3 + 2*VT, and the delay time of process chamber Ch6 (step number 2, sequence number 3) is set to the processing time of process chamber Ch3 + 3*VT.

[0039] It should be noted here that after setting the delay time, the identification of the process chamber and the delay time corresponding to the process chamber can also be stored in the chamber delay time set <delay time, identification of the process chamber>. For example, for subtask 1, the chamber delay time set, that is, the NucOngoChambers set, is {(0, Ch1) (VT, Ch3) (2*VT, Ch5)}. For subtask 2, the chamber delay time set includes the NucOngoChambers set and the BulkOngoChambers set, where the NucOngoChambers set is {(0, Ch1) (VT, Ch3) (2*VT, Ch5)}, and the BulkOngoChambers set is {(processing time of process chamber Ch1 + VT, Ch2) (processing time of process chamber Ch3 + 2*VT, Ch4) (processing time of process chamber Ch5 + 3*VT, Ch6)}.

[0040] S103, controlling the process chamber to perform a chamber preheating action when the corresponding delay time is reached.

[0041] In the embodiment of the present application, when each process chamber reaches its corresponding delay time, a CleanOngo action is performed on the process chamber.

[0042] In some embodiments, the following steps can be used to determine whether the process chamber has reached the corresponding delay time: obtain the difference between the current moment and the subtask start moment in real time; determine whether the difference reaches the delay time corresponding to the process chamber; if the difference reaches the delay time corresponding to the process chamber, determine that the process chamber has reached the corresponding delay time; if the difference does not reach the delay time corresponding to the process chamber, determine that the process chamber has not reached the corresponding delay time, return to the step of obtaining the difference between the current moment and the subtask start moment in real time, and continue to judge.

[0043] Still taking the above example, assuming that the start time of subtask 1 is T0, it is determined whether the current time -T0 reaches the delay time corresponding to process chambers Ch1, Ch3 and Ch5. Assuming that the start time of subtask 2 is T1, it is determined whether the current time -T1 reaches the delay time corresponding to process chambers Ch1, Ch3, Ch5, Ch2, Ch4 and Ch6.

[0044] It should be noted here that it is possible to determine whether the process chamber corresponding to the identifier of the first process chamber has reached the corresponding delay time by judging whether the difference between the current time and the subtask start time has reached the delay time corresponding to the identifier of the first process chamber in the chamber delay time set. If the difference reaches the delay time corresponding to the identifier of the first process chamber in the chamber delay time set, it is determined that the first process chamber has reached the corresponding delay time.

[0045] Correspondingly, the first process chamber is controlled to perform the chamber preheating action when the corresponding delay time is reached; after the chamber preheating action is completed, the identifier of the first process chamber and the delay time corresponding to the first process chamber are deleted from the chamber delay time set until the chamber delay time set is empty and all process chambers in the process path corresponding to the subtask have completed the chamber preheating action.

[0046] S104, transferring the material corresponding to the subtask to the corresponding process chamber after the chamber preheating action is performed for process processing.

[0047] In an embodiment of the present application, after the delay time is set, the material corresponding to the subtask is transferred to the corresponding process chamber for process processing. The above delay time setting can ensure that when the material is transferred to the corresponding process chamber, the process chamber has completed the CleanOngo action.

[0048] For each material associated with a subtask, you can traverse it from small to large in the order of the slots in the LoadPort. Before taking a piece from the LoadPort, determine whether the material belongs to the material corresponding to the subtask in the WaferInSqc collection. If the material is associated with the subtask, take the material out to start transmission and processing. When each material is added and returned to the LoadPort, the material information is removed from the WaferInSqc collection. Continue to determine whether all materials associated with the current subtask have been removed from the WaferInSqc collection. If all materials associated with the current subtask have been returned to the LoadPort, the current subtask is now executed, and the subitem corresponding to the current subtask is removed from the ChamberInSqc collection, and the subitem corresponding to the current subtask in the WaferInSqc collection is also removed. Determine whether the ChamberInSqc collection is empty. If it is empty, all subtasks are completed and the process task is completed; if it is not empty, continue to start the next subtask.

[0049] Still taking the above example, when transferring materials, material 1 is first transferred from LoadPort to process chamber Ch1 for process processing, material 2 is then transferred from LoadPort to process chamber Ch3 for process processing, and material 3 is then transferred from LoadPort to process chamber Ch5 for process processing.

[0050] After material 1 completes the process in process chamber Ch1, it is transferred back to LoadPort, and then material 4 is transferred from LoadPort to process chamber Ch1 for process processing. After the process is completed, material 4 is transferred out of process chamber Ch1 and then transferred to process chamber Ch2 for process processing, and then transferred back to LoadPort after the process is completed.

[0051] Correspondingly, after material 2 completes the process processing in process chamber Ch3, it is transferred back to LoadPort, and then material 5 is transferred from LoadPort to process chamber Ch3 for process processing. After the process processing is completed, material 5 is transferred out of process chamber Ch3 and then transferred to process chamber Ch4 for process processing, and then transferred back to LoadPort after the process processing is completed.

[0052] Correspondingly, after the material 3 completes the process processing in the process chamber Ch5, it is transferred back to the LoadPort, and then the material 6 is transferred from the LoadPort to the process chamber Ch5 for the process processing flow. After the process processing is completed, the material 6 is transferred out of the process chamber Ch5 and then transferred to the process chamber Ch6 for the process processing flow, and then transferred back to the LoadPort after the process processing is completed.

[0053] The following analysis takes process chamber Ch2 as an example, and material 4 is the first material passed into Ch2. Material 4 is associated with process route Route2, taken out from LoadPort, passed into process chamber Ch1 for processing, then passed into process chamber Ch2 for processing, and finally passed back to LoadPort.

[0054] According to the implementation of the scheme of the relevant technology, the start time of the process task Job1 is recorded as T0. After Job1 is started, the CleanOngo action is issued to the process chambers Ch1 and Ch2. The delay time for Ch1 to execute the CleanOngo action is set to 0, and the delay time for Ch2 to execute the CleanOngo action is set to: the processing time of the process chamber Ch1 + VT. Then the end time of the Ch2 CleanOngo action execution should be: T0 + VT + the processing time of material 4 in the process chamber Ch1 + the time when Ch2 executes the CleanOngo action. Affected by the material 1 associated with the process route Route1, material 4 needs to wait for material 1 to complete the process flow of Ch1 before material 4 is transferred to Ch1 to execute the process flow. Then material 4 is transferred out from Ch1 and then transferred to Ch2 through the robot to execute the process flow. Then the time point when material 4 is transferred to Ch2 should be: T0 + the time when Ch1 executes the CleanOngo action + the processing time of material 1 in the process chamber Ch1 + the processing time of material 4 in the process chamber Ch1 + VT. In summary, there is a time interval between the time point when Ch2 finishes the CleanOngo action (T0+VT+the processing time of material 4 in process chamber Ch1+the time when Ch2 executes the CleanOngo action) and the time point when material 4 is transferred into Ch2 (T0+the time when Ch1 executes the CleanOngo action+the processing time of material 1 in process chamber Ch1+the processing time of material 4 in process chamber Ch1+VT): the processing time of material 1 in process chamber Ch1, that is, Ch2 has been idle for a period of time before the material is first transferred into it, and the idle time is consistent with the processing time of process chamber Ch1, and the first piece effect occurs in process chamber Ch2.

[0055] According to the scheme of the embodiment of the present application, after the processing of materials 1, 2, and 3 associated with subtask 1 corresponding to process path Route1 is completed and returned to LoadPort, subtask 2 corresponding to process path Route2 is started, and the start time of subtask 2 is recorded as T0, and CleanOngo actions are issued to Ch1 and Ch2. The delay time for Ch1 to execute the CleanOngo action is set to 0, and the delay time for Ch2 to execute the CleanOngo action is set to: the processing time of material 4 in the process chamber of Ch1 + VT, then the time when the Ch2CleanOngo action is completed should be: T0+VT+the processing time of material 4 in the process chamber Ch1+the time when Ch2 executes the CleanOngo action. The time point when material 4 is transmitted to Ch2 is: T0+the time when Ch1 executes the CleanOngo action+the processing time of material 4 in the process chamber Ch1+VT. In summary, the time point when Ch2 finishes the CleanOngo action (T0+VT+the processing time of material 4 in process chamber Ch1+the time when Ch2 executes the CleanOngo action) and the time point when material 4 is transferred into Ch2 (T0+the time when Ch1 executes the CleanOngo action+the processing time of material 4 in process chamber Ch1+VT) are basically the same, that is, the idle time before Ch2 first transfers the material is short, which effectively avoids the first-piece effect in process chamber Ch2.

[0056] In summary, the control method of the semiconductor process equipment of the embodiment of the present application, after the process task associated with multiple process paths is started, divides the process task into multiple serially executed subtasks according to multiple process paths, starts multiple serially executed subtasks in sequence, and after each subtask is started, sends the chamber preheating action to the process chamber in the process path corresponding to the subtask, and sets the delay time for the process chamber to execute the chamber preheating action, controls the process chamber to execute the chamber preheating action when the corresponding delay time is reached, and transfers the material corresponding to the subtask to the corresponding process chamber that has completed the chamber preheating action for process processing. For the process task associated with multiple process paths, the embodiment of the present application divides the process task into multiple serially executed subtasks according to multiple process paths, and sets the delay time of the chamber preheating action for each subtask separately, so that the delay time setting of the chamber preheating action is more accurate, avoiding the phenomenon that the process chamber is idle for too long before the material is introduced, thereby more completely avoiding the first-piece effect and improving the process effect.

[0057] To clearly illustrate the control method of the semiconductor process equipment of the present application embodiment, the following is combined with Figure 2 The overall process of the control method of the semiconductor process equipment of the embodiment of the present application is described in detail. Figure 2As shown, still taking the above example as an example, the control method of the semiconductor process equipment in the embodiment of the present application includes the following steps: S201, process task Job1 is started, and Job1 is divided into subtask 1 and subtask 2 according to process routes Route1 and Route2.

[0058] S202, construct the ChamberInSqc collection {(Route1, Ch1 / Ch3 / Ch5), (Route2, Ch1 / Ch3 / Ch5+Ch2 / Ch4 / Ch6)} and the WaferInSqc collection {(Route1, Material 1+Material 2+Material 3), (Route2, Material 4+Material 5+Material 6)}.

[0059] S203, start subtask 1.

[0060] S204, according to the ChamberInSqc set, issue the CleanOngo action to Ch1, Ch3 and Ch5 associated with subtask 1, set the delay time of Ch1, Ch3 and Ch5, and store it in the NucOngoChambers set {(0, Ch1)(VT, Ch3)(2*VT, Ch5)}.

[0061] S205 , according to the NucOngoChambers set, controlling the process chamber that reaches the delay time to perform a CleanOngo action, and removing it from the NucOngoChambers set.

[0062] S206, according to the WaferInSqc set, transfer material 1, material 2 and material 3 associated with subtask 1 from LoadPort to Ch1, Ch3 and Ch5 respectively for process processing, and return to LoadPort after processing.

[0063] S207, update the ChamberInSqc collection to {(Route2, Ch1 / Ch3 / Ch5+Ch2 / Ch4 / Ch6)}, and update the WaferInSqc collection to {(Route2, Material 4+Material 5+Material 6)}.

[0064] S208, ChamberInSqc collection is not empty.

[0065] S209, start subtask 2 S210, according to the ChamberInSqc set, issue the CleanOngo action to Ch1, Ch3, Ch5, Ch2, Ch4 and Ch6 associated with subtask 2, set the delay time of Ch1, Ch3 and Ch5, and store them in the NucOngoChambers set {(0, Ch1)(VT, Ch3)(2*VT, Ch5)}, set the delay time of Ch2, Ch4 and Ch6, and store them in the BulkOngoChambers set {(processing time of process chamber Ch1 + VT, Ch2)(processing time of process chamber Ch1 + 2*VT, Ch4)(processing time of process chamber Ch1 + 3*VT, Ch6)}.

[0066] S211 , according to the NucOngoChambers set and the BulkOngoChambers set, control the process chamber that reaches the delay time to perform a CleanOngo action, and remove it from the NucOngoChambers set or the BulkOngoChambers set.

[0067] S212, according to the WaferInSqc set, transfer materials 4, 5 and 6 associated with subtask 2 from LoadPort to Ch1+Ch2, Ch3+Ch4 and Ch5+Ch6 for process processing, and return to LoadPort after processing.

[0068] S213, update the ChamberInSqc set to {}, and update the WaferInSqc set to {}.

[0069] S214, ChamberInSqc collection is empty.

[0070] S215, the process task Job1 is completed.

[0071] The present application also provides a semiconductor process equipment. Figure 3 As shown, the semiconductor process equipment includes: a controller ( Figure 3 ) and a plurality of process chambers 31 ( Figure 3 In the figure, six process chambers Ch1-Ch6 are taken as an example), the controller is arranged in the host computer and / or the slave computer of the semiconductor process equipment, and the controller includes at least one processor and at least one memory, and a computer program is stored in the memory. When the computer program is executed by the processor, the steps of the control method embodiment of any of the above-mentioned semiconductor process equipment are implemented.

[0072] The semiconductor process equipment may further include: a plurality of load ports (Load Port, LP for short, Figure 332. Atmospheric Transfer Robot (ATR) 33. Multiple Load Locks (LL, Figure 3 The ATR 33 transfers the wafer transfer box from the loading port 32 to the loading lock 34, and the VTR 35 is used to transfer the wafers in the wafer transfer box to the process chamber 31 for process processing. After the process processing is completed, the wafers are transferred from the process chamber 31 back to the wafer transfer box of the loading lock 34, and the ATR 33 transfers the wafer transfer box back to the loading port 32.

[0073] The semiconductor process equipment of the embodiment of the present application, after the process task associated with multiple process paths is started, divides the process task into multiple serially executed subtasks according to the multiple process paths, starts the multiple serially executed subtasks in sequence, and after each subtask is started, sends the chamber preheating action to the process chamber in the process path corresponding to the subtask, sets the delay time for the process chamber to execute the chamber preheating action, controls the process chamber to execute the chamber preheating action when the corresponding delay time is reached, and transfers the material corresponding to the subtask to the corresponding process chamber that has completed the chamber preheating action for process processing. The embodiment of the present application divides the process task associated with multiple process paths into multiple serially executed subtasks according to the multiple process paths, and sets the delay time of the chamber preheating action for each subtask separately, so that the delay time setting of the chamber preheating action is more accurate, avoiding the phenomenon that the process chamber is idle for too long before the material is introduced, thereby more completely avoiding the first-piece effect and improving the process effect.

[0074] An embodiment of the present application also proposes a readable storage medium, on which one or more computer programs are stored. The one or more computer programs include instructions. When the program or instructions are executed by a processor in a semiconductor process equipment including multiple application programs, the processor in the semiconductor process equipment can execute the various processes of the control method embodiment of the above-mentioned semiconductor process equipment, and is specifically used to execute the steps of any of the above-mentioned control method embodiments of the semiconductor process equipment.

[0075] The readable storage medium of the embodiment of the present application, after the process task associated with multiple process paths is started, divides the process task into multiple serially executed subtasks according to the multiple process paths, starts the multiple serially executed subtasks in sequence, and after each subtask is started, sends the chamber preheating action to the process chamber in the process path corresponding to the subtask, and sets the delay time for the process chamber to execute the chamber preheating action, controls the process chamber to execute the chamber preheating action when the corresponding delay time is reached, and transfers the material corresponding to the subtask to the corresponding process chamber that has completed the chamber preheating action for process processing. For the process task associated with multiple process paths, the embodiment of the present application divides the process task into multiple serially executed subtasks according to the multiple process paths, and sets the delay time of the chamber preheating action for each subtask separately, so that the delay time setting of the chamber preheating action is more accurate, avoiding the phenomenon that the process chamber is idle for too long before the material is introduced, thereby more completely avoiding the first piece effect and improving the process effect.

[0076] The systems, devices, modules or units described in the above embodiments may be implemented by computer chips or entities, or by products with certain functions. A typical implementation device is a computer. Specifically, the computer may be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0077] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0078] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0079] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0080] These computer program instructions may also be stored in a computer readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer readable memory produce an article of manufacture including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0081] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0082] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0083] Memory may include non-permanent storage in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. Memory is an example of a computer-readable medium.

[0084] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined in this article, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0085] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0086] The present application may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present application may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0087] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0088] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A control method for semiconductor process equipment, characterized in that: include: After a process task associated with a plurality of process paths is started, the process task is divided into a plurality of subtasks to be executed in series according to the plurality of process paths; Starting the multiple serially executed subtasks in sequence, and after each of the subtasks is started, sending the chamber preheating action to the process chamber in the process path corresponding to the subtask, and setting a delay time for the process chamber to perform the chamber preheating action; Controlling the process chamber to perform the chamber preheating action when the corresponding delay time is reached; The material corresponding to the subtask is transferred to the corresponding process chamber after the chamber preheating action is performed for process processing.

2. The method according to claim 1, characterized in that The step of setting a delay time for the process chamber to perform the chamber preheating action includes: Obtaining a step number of the process chamber in the corresponding process path and a sequence number of the step corresponding to the step number; The delay time corresponding to the process chamber is determined according to the step number and the sequence number.

3. The method according to claim 2, characterized in that The step of determining the delay time corresponding to the process chamber according to the step number and the sequence number includes: The delay time corresponding to the process chamber is determined by the following formula: Delay time = (step number - 1) * processing time of the process chamber corresponding to (step number - 1) + (step number + sequence number - 2) * robot film transfer action time VT.

4. The method according to claim 1, characterized in that: The controlling the process chamber to perform the chamber preheating action when the corresponding delay time is reached also includes: Obtaining the difference between the current time and the subtask start time in real time; If the difference reaches the delay time corresponding to the process chamber, it is determined that the process chamber has reached the corresponding delay time.

5. The method according to claim 3, characterized in that: The plurality of process paths include a first path, wherein the first path includes a first process chamber having a step number of 1 and a sequence number of 1, a third process chamber having a step number of 1 and a sequence number of 2, and a fifth process chamber having a step number of 1 and a sequence number of 3; The step of determining the delay time corresponding to the process chamber according to the step number and the sequence number includes: Determine that the delay time corresponding to the first process chamber in the first path is 0; Determine the delay time corresponding to the third process chamber in the first path as VT; The delay time corresponding to the fifth process chamber in the first path is determined to be 2*VT.

6. The method according to claim 5, characterized in that The plurality of process paths further include a second path, wherein the second path includes the first process chamber having a step number of 1 and a sequence number of 1, the third process chamber having a step number of 1 and a sequence number of 2, and the fifth process chamber having a step number of 1 and a sequence number of 3, as well as the second process chamber having a step number of 2 and a sequence number of 1, the fourth process chamber having a step number of 2 and a sequence number of 2, and the sixth process chamber having a step number of 2 and a sequence number of 3; The step of determining the delay time corresponding to the process chamber according to the step number and the sequence number further includes: Determine that the delay time corresponding to the first process chamber in the second path is 0; Determine the delay time corresponding to the third process chamber in the second path as VT; Determine that the delay time corresponding to the fifth process chamber in the second path is 2*VT; Determine the delay time corresponding to the second process chamber in the second path as the processing time of the first process chamber; Determine that the delay time corresponding to the fourth process chamber in the second path is the processing time of the third process chamber + VT; The delay time corresponding to the sixth process chamber in the second path is determined to be the processing time of the fifth process chamber+2*VT.

7. The method according to claim 6, characterized in that The process task is a dual-temperature process task, the first process chamber, the third process chamber and the fifth process chamber are deposition process chambers, and the second process chamber, the fourth process chamber and the sixth process chamber are nucleation process chambers.

8. The method according to claim 4, characterized in that After setting the delay time for the process chamber to perform the chamber preheating action, the method further includes: storing the identifier of the process chamber and the delay time corresponding to the process chamber into a chamber delay time set; If the difference reaches the delay time corresponding to the process chamber, determining that the process chamber reaches the corresponding delay time includes: If the difference reaches the delay time corresponding to the identifier of the first process chamber in the chamber delay time set, it is determined that the first process chamber reaches the corresponding delay time; The controlling the process chamber to perform the chamber preheating action when the corresponding delay time is reached includes: Controlling the first process chamber to perform the chamber preheating action when the corresponding delay time is reached; After the chamber preheating action is completed, the identifier of the first process chamber and the delay time corresponding to the first process chamber are deleted from the chamber delay time set.

9. The method according to claim 1, characterized in that: After the process task is started, it also includes: Constructing a path-chamber set, wherein the path-chamber set includes identifiers of the plurality of process paths and identifiers of the process chambers in each process path corresponding to the identifiers of each process path; After each of the subtasks is started, before the chamber preheating action is sent to the process chamber in the process path corresponding to the subtask, the method further includes: The process chamber in the process path corresponding to the subtask is determined according to the path chamber set.

10. The method according to claim 1, characterized in that After the process task is started, it also includes: Constructing a path material set, wherein the path chamber set includes identifiers of the plurality of process paths and materials associated with each of the process paths corresponding to the identifiers of the process paths; Before the material corresponding to the subtask is transferred to the corresponding process chamber after the chamber preheating action is performed for process processing, the method further includes: According to the path material set, the material associated with the process path corresponding to the subtask is determined.

11. A semiconductor process equipment, characterized in that: include: A controller and multiple process chambers, wherein the controller is arranged in the upper computer and / or the lower computer of the semiconductor process equipment, and the controller includes at least one processor and at least one memory, wherein the memory stores a computer program, and when the computer program is executed by the processor, the steps of the method as described in any one of claims 1 to 10 are implemented.

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