Method and equipment for repairing material defects

Abstract

The invention discloses a method and equipment for repairing material defects, and belongs to the technical field of material treatment.The method for repairing the material defects comprises the steps that a to-be-repaired object is placed in a reaction container, a fluid state medium is injected into the reaction container, and the fluid state medium at least covers the to-be-repaired object; adjusting the pressure and temperature in the reaction container to enable the pressure in the reaction container to reach a preset pressure and the temperature to reach a preset temperature; and standing for a preset time length to carry out isostatic pressing treatment on the to-be-repaired object, and repairing the defect of the to-be-repaired object by utilizing a fluid state medium at a preset pressure and a preset temperature. The method comprises the following steps: performing isostatic pressing treatment on a to-be-repaired object through a fluid state medium at proper temperature and pressure, so as to realize accurate repair of defects of the to-be-repaired object.

Description

Technical Field

[0001] The present invention relates to the technical field of material processing, and in particular to a method and equipment for repairing material defects. Background Art

[0002] At present, the methods for eliminating defects in semiconductor materials include: heat treatment methods, such as laser annealing, rapid thermal annealing, etc. Heat treatment is to eliminate stress inside the material and repair lattice defects by heating the semiconductor material to a certain temperature and then slowly cooling it. Ion implantation and annealing methods use ion implantation technology to introduce impurity atoms into semiconductor materials, and then activate these atoms through annealing to repair lattice defects or change the electrical properties of the material.

[0003] However, conventional thermal annealing methods tend to provide uneven heat distribution and may not completely eliminate material defects. In addition, the different thermal expansion coefficients of semiconductor materials can also lead to stress between materials after annealing, which can cause more defects.

[0004] Therefore, how to accurately repair defects in semiconductor materials is an urgent problem to be solved. Summary of the invention

[0005] The main technical problem solved by the present invention is how to achieve accurate repair of defects in semiconductor materials.

[0006] According to the first aspect, an embodiment provides a method for repairing a material defect, the method comprising: Placing the object to be repaired in a reaction container, and injecting a fluid medium into the reaction container, wherein the fluid medium at least covers the object to be repaired; Adjusting the pressure and temperature in the reaction container so that the pressure in the reaction container reaches a preset pressure and the temperature reaches a preset temperature; The object to be repaired is left to stand for a preset time to perform isostatic pressure treatment, and the defects of the object to be repaired are repaired by using the fluid medium at the preset pressure and the preset temperature.

[0007] According to the second aspect, an embodiment provides a device for repairing material defects, the device comprising: A reaction container, used for containing the object to be repaired and a fluid medium; A pressure regulating device, used to regulate the pressure in the reaction container so that the pressure in the reaction container reaches a preset pressure; A temperature regulating device, used to regulate the temperature in the reaction container so that the temperature in the reaction container reaches a preset temperature; After the pressure in the reaction container reaches the preset pressure and the temperature reaches the preset temperature, the pressure regulating device maintains the preset pressure for a preset time, and the temperature regulating device maintains the preset temperature for a preset time, so as to perform isostatic pressing on the object to be repaired, and repair the defects of the object to be repaired by using the fluid medium at the preset pressure and the preset temperature.

[0008] According to the method for repairing material defects in the above embodiment, the object to be repaired is subjected to isostatic pressing by a fluid medium at a suitable temperature and pressure to achieve accurate repair of the defects of the object to be repaired. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 A schematic diagram of a process for repairing material defects provided in this embodiment; Figure 2 A schematic diagram of a device for repairing material defects provided in this embodiment; Figure 3 A first characteristic curve diagram of the gallium oxide field effect transistor provided in this embodiment; Figure 4 A second characteristic curve diagram of the gallium oxide field effect transistor provided in this embodiment; Figure 5 A third characteristic curve diagram of the gallium oxide field effect transistor provided in this embodiment; Figure 6 A fourth characteristic curve diagram of the gallium oxide field effect transistor provided in this embodiment; Figure 7 A schematic diagram of a defect of the GaN field effect transistor provided in this embodiment; Figure 8 A schematic diagram of a repaired GaN field effect transistor provided in this embodiment; Fig. 9 Another defect schematic diagram of the GaN field effect transistor provided in this embodiment; Fig.10 A schematic diagram of the atomic structure of the gallium nitride field effect transistor with the fluid medium introduced provided in this embodiment; Fig.11 A schematic diagram of the atomic structure of the repaired GaN field effect transistor provided in this embodiment; Fig.12 A schematic diagram of another defect of the gallium oxide field effect transistor provided in this embodiment; Fig.13 Another schematic diagram of the repaired gallium oxide field effect transistor provided in this embodiment; Fig.14Schematic diagram of the atomic structure of the semiconductor device to be repaired and the atomic structure of the repaired semiconductor device provided in this embodiment. DETAILED DESCRIPTION

[0010] The present invention is further described in detail below by specific embodiments in conjunction with the accompanying drawings. Wherein similar elements in different embodiments adopt associated similar element numbers. In the following embodiments, many detailed descriptions are for making the present application better understood. However, those skilled in the art can easily recognize that some features can be omitted in different situations, or can be replaced by other elements, materials, methods. In some cases, some operations related to the present application are not shown or described in the specification, this is to avoid the core part of the present application being overwhelmed by too much description, and for those skilled in the art, it is not necessary to describe these related operations in detail, and they can fully understand the related operations according to the description in the specification and the general technical knowledge in the art.

[0011] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various implementations. At the same time, the steps or actions in the method description can also be interchanged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the various sequences in the specification and the drawings are only for the purpose of clearly describing a certain embodiment and are not meant to be a required sequence, unless otherwise specified that a certain sequence must be followed.

[0012] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings).

[0013] In 1955, the Battelle Institute in the United States first applied hot isostatic pressing technology to the adhesion and bonding of nuclear fuel in the nuclear reaction process to improve density. The successful development of gas atomization method for producing powder in the 1960s promoted the development of hot isostatic pressing technology. Since then, hot isostatic pressing technology has gradually been applied to the densification of graphite, ceramics, composite materials, metal materials and powder metallurgy as a new method to improve material properties. Combining 3D printing technology with hot isostatic pressing technology can produce products with high density and good mechanical properties. Traditional hot isostatic pressing technology uses argon to create a high-pressure environment, but it is mainly used for alloys and powders, requiring extremely high pressure and temperature.

[0014] At present, whether using traditional hot isostatic pressing technology or thermal annealing technology to eliminate defects in semiconductor devices, the device is placed in a closed container, and then pressure is applied to the device in all directions, while the temperature is increased to reduce or eliminate various defects inside the device under extremely high temperatures and pressures, such as crystal line defects. However, many devices will fail at extremely high temperatures, and in non-isostatic conditions, the structures of semiconductor devices and semiconductor materials that are subjected to extremely high pressures will also be damaged. Therefore, how to avoid the precise repair of defects (interface defects, body defects, surface defects, point defects) of semiconductor materials and semiconductor devices under extremely high temperatures and non-isostatic high-pressure environments has become increasingly critical.

[0015] Based on this, the scheme of the present invention is proposed. In an embodiment of the present invention, at a suitable temperature and pressure, the object to be repaired is subjected to isostatic pressing by a fluid medium to achieve accurate repair of defects in the object to be repaired, that is, under a relatively low temperature and isostatic pressure environment, the fluid medium flows into the defect position of the semiconductor multilayer material or semiconductor device, and the atoms near the defect position are subjected to a suitable three-dimensional pressure, which can promote better bonding between the mismatched atoms, thereby achieving the purpose of repairing defects in semiconductor materials and semiconductor devices. This is described in detail below through some embodiments.

[0016] Example 1, please refer to Figure 1 , Figure 1 is a schematic flow chart of a method for repairing material defects provided in this embodiment, such as Figure 1 As shown, the specific steps include the following steps 101-103: Step 101: placing an object to be repaired in a reaction container, and injecting a fluid medium into the reaction container, wherein the fluid medium at least covers the object to be repaired.

[0017] In this embodiment, the object to be repaired includes at least one of the following: one or more layers of stacked biological materials, one or more layers of stacked organic materials, one or more layers of stacked first-generation semiconductor materials, one or more layers of stacked second-generation semiconductor materials, one or more layers of stacked third-generation semiconductor materials, and semiconductor heterojunctions. Among them, multiple layers are two layers and more than two layers. The object to be repaired can be a material with two layers stacked, or a material with more than two layers stacked; or a device formed by these materials.

[0018] It should be noted that biomaterials can be artificially synthesized biomaterials: such as metal alloys (stainless steel, titanium alloys, etc.), bioceramics (alumina, silicon nitride, etc.), biodegradable polymers (polylactic acid, polyglycolic acid, etc.) and polymer materials (polyurethane, polyethylene, etc.).

[0019] It should be noted that the organic material can be natural organic matter, such as rubber, natural resin and natural polymer compound, etc. It can also be synthetic organic matter, such as plastic, synthetic rubber, synthetic fiber and resin.

[0020] It should be noted that a heterojunction is an interface region formed by two or more thin films of different semiconductor materials being deposited in sequence on the same substrate.

[0021] It should be noted that the first generation of semiconductor materials mainly include silicon (Si) and germanium (Ge); the second generation of semiconductor materials mainly include compound semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP); the third generation of semiconductor materials mainly include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), zinc oxide (ZnO), diamond, aluminum nitride (AlN), etc.

[0022] In this embodiment, the object to be repaired includes a semiconductor device and a semiconductor material.

[0023] In this embodiment, the fluid medium includes fluid carbon dioxide.

[0024] It should be noted that fluid carbon dioxide has excellent fluidity and permeability, and can enter the defective positions of semiconductor multilayer materials under a relatively low temperature and isostatic pressure environment. The atoms at the defective positions are subjected to appropriate three-dimensional pressure, which can promote better bonding between mismatched atoms, thereby achieving the purpose of repairing defects in semiconductor multilayer materials.

[0025] In this embodiment, the fluid medium is in a liquid state, a gas state or a supercritical state at a preset pressure and a preset temperature.

[0026] It should be noted that the supercritical state of a medium is characterized by a state in which the pressure and temperature of the medium simultaneously exceed its critical pressure and critical temperature. The diffusion coefficient of the medium in the supercritical state is high and has good solubility.

[0027] Step 102: Adjust the pressure and temperature in the reaction container so that the pressure in the reaction container reaches a preset pressure and the temperature reaches a preset temperature.

[0028] In this embodiment, the preset pressure is greater than 15 psi and less than or equal to 15000 psi, and the preset temperature is less than 400° C. It should be noted that the preset temperature can be any temperature less than 400° C., that is, one of the temperatures less than 400° C. can be selected as the preset temperature, such as 86° C., 350° C., etc., as long as it is less than 400° C., and the present invention does not make any limitation on this.

[0029] Exemplarily, the fluid medium creates a repair environment through lower temperature and pressure. After the medium enters the supercritical state, the temperature and pressure continue to rise, and the maximum temperature is less than 350°C and the maximum pressure is no more than 15,000 psi. In this way, the fluid medium can enter the internal defects of the semiconductor device. After three-dimensional pressure is formed between the atoms near the defect position and the atoms at the defect, the mismatched atoms can be better bonded to achieve precise repair of the defects of the semiconductor device.

[0030] It should be noted that semiconductor materials and semiconductor devices are under three-dimensional pressure at any position. This three-dimensional isostatic pressure environment can avoid the failure of materials and devices due to uneven material stress caused by a non-isostatic pressure environment.

[0031] It should be noted that when the pressure in the reaction container reaches the preset pressure and the temperature reaches the preset temperature, the temperature and pressure at each position of the object to be repaired in the reaction container are uniform.

[0032] It should be noted that the fluid medium only repairs the defective parts of the material to be repaired, and has no adverse effect on other non-defective parts. This is because semiconductor materials and devices are under three-dimensional pressure at any position. This three-dimensional isostatic pressure environment can avoid the failure of materials and devices caused by uneven material stress due to non-isostatic pressure environment.

[0033] Step 103 : The object to be repaired is left to stand for a preset time to perform isostatic pressure treatment, and the defects of the object to be repaired are repaired by using a fluid medium at a preset pressure and a preset temperature.

[0034] It should be noted that the preset duration may be any duration. For example, the preset duration may be any duration between 30 minutes and 120 minutes.

[0035] It should be noted that the use of a fluid medium at a preset pressure and a preset temperature to repair defects in the object to be repaired can be as follows: the fluid medium at a preset pressure and a preset temperature enters the internal defects of the object to be repaired, and after a three-dimensional pressure is formed between the atoms near the defect position and the atoms at the defect, the mismatched atoms can be better bonded, thereby achieving precise repair of the defects in the object to be repaired.

[0036] In this embodiment, after the defects of the object to be repaired are repaired using a fluid medium at a preset pressure and a preset temperature, it is necessary to further determine whether the object to be repaired is qualified. Specifically, the electrical characteristics of the semiconductor device are tested to obtain initial performance parameters; the electrical characteristics of the repaired object to be repaired are tested to obtain final performance parameters; the initial performance parameters are compared with the final performance parameters to obtain a first comparison result; based on the first comparison result, it is determined whether the object to be repaired is qualified; or, the electrical characteristics of the repaired object to be repaired are tested to obtain final performance parameters; the final performance parameters are compared with a preset parameter threshold to obtain a second comparison result; based on the second comparison result, it is determined whether the object to be repaired is qualified.

[0037] It should be noted that the initial performance parameter may be any performance parameter obtained after the electrical characteristics test of the object to be repaired. For example, the initial performance parameter may be an initial threshold voltage and / or an initial on-state current.

[0038] It should be noted that the final performance parameter may be any performance parameter obtained after the electrical characteristics test of the repaired object. For example, the final performance parameter may be the final threshold voltage and / or the final on-state current.

[0039] Taking the performance parameter of on-state current as an example, in practical applications, determining whether the object to be repaired is qualified based on the first comparison result can be: if the initial on-state current is less than the final on-state current, it means that the performance of the object to be repaired has been improved after repair, which is sufficient to indicate that the object to be repaired has been repaired and qualified. Figure 1 Each step is followed until the repair is qualified.

[0040] It should be noted that the preset parameter threshold may be any parameter threshold. Exemplarily, the preset parameter threshold may be a preset on-state current threshold.

[0041] Taking the performance parameter of on-state current as an example, in practical applications, determining whether the object to be repaired is qualified based on the second comparison result can be: if the final on-state current is greater than the preset on-state current threshold, it means that the performance of the object to be repaired has been improved after repair, which is sufficient to indicate that the object to be repaired has been repaired and qualified. If the object to be repaired is still not qualified after repair, it can be repeated. Figure 1 Each step is followed until the repair is qualified.

[0042] Taking the gallium oxide field effect transistor as an example, the method for repairing material defects of the present application is described in detail.

[0043] (1) Pretreatment Conduct electrical characteristic tests (transfer characteristic test and output characteristic test) on the gallium oxide field effect transistor to be repaired to obtain the initial electrical parameters of the gallium oxide field effect transistor, such as the initial threshold voltage and initial on-state current.

[0044] (2) Isostatic fluid processing like Figure 2 As shown, draw carbon dioxide gas from the gas cylinder ( Figure 2 The left container) is filled into the air pressure pump ( Figure 2 The gas pump is then closed and the gas is pressurized to 3000 psi. The gallium oxide field effect transistor to be repaired is placed in the reaction chamber (reaction container, Figure 2 The reaction chamber is sealed and heated to 150°C. Carbon dioxide in a gas pressure pump is introduced into the reaction chamber to keep the carbon dioxide in the reaction chamber at 150°C and 3000psi. At this time, the carbon dioxide enters a supercritical state and can form a three-dimensional pressure at the defect position inside the gallium oxide field effect transistor to be repaired, thereby promoting better bonding between mismatched atoms. After the reaction chamber is left standing for 60 to 120 minutes, the reaction chamber is cooled and depressurized, i.e., cooled to room temperature and depressurized to normal pressure, and then the repaired gallium oxide field effect transistor is taken out.

[0045] It should be noted that the defects inside the gallium oxide field effect transistor to be repaired may be interface defects between the gate dielectric layer and the active region, or may be body defects and surface defects within each layer of material.

[0046] (3) Post-processing The electrical characteristics of the repaired GaO FET are tested to obtain the final electrical parameters, such as the final threshold voltage and the final on-state current, and compared with the initial electrical parameters, such as Figure 3 As shown. Figure 3-Figure 6 It can be seen that the capacitance hysteresis window of the repaired gallium oxide field effect transistor has become smaller, the gate control capability of the device has been enhanced, the maximum transconductance has increased, and the on-state current has increased. It can be seen that the overall performance of the repaired gallium oxide field effect transistor has been improved. This shows that the method of repairing material defects in this application can well repair the defects of semiconductor devices and can effectively improve the electrical performance of semiconductor devices.

[0047] from Figure 7 It can be seen that there are defects such as threading dislocations and line dislocations in the GaN layer of the GaN field effect transistor to be repaired. Figure 8 It can be seen that after the GaN FET to be repaired is repaired using the material defect repair method, the threading dislocations and line dislocations in the GaN layer are significantly reduced compared to before. It can be seen that the defects of the GaN FET to be repaired have been well repaired.

[0048] from Fig. 9 It can be seen that the GaN field effect transistor to be repaired has a defect of broken atomic bonds. The present application utilizes the fluidity of isostatically pressurized CO2 to bring NH3 into the GaN layer, and utilizes the high diffusivity of isostatically pressurized CO2 to bring NH3 into the lattice of the GaN field effect transistor. Fig.10 As shown. The isostatic fluid CO2 forms a three-dimensional pressure near the threading dislocations and line dislocations in the GaN layer. At this time, the NH3 molecules will combine with the dangling bonds of the threading dislocations and line dislocations. At this time, there are still two H atoms on the N atom. As the reaction proceeds, the two H atoms on the adjacent "filled" N atoms will react with the adjacent ones to undergo deamination, thereby "filling" the N vacancies, crystal cracks and other defects inside the GaN field effect transistor to be repaired, as shown. Fig.11 shown.

[0049] from Fig.12 It can be seen that there are obvious diffraction rings in the diffraction pattern of the gallium oxide layer of the gallium oxide field effect transistor to be repaired, which indicates that there are polycrystalline and amorphous states in gallium oxide. After the gallium oxide field effect transistor to be repaired is repaired by the material defect repairing method of the present application, the diffraction rings in the diffraction pattern of the gallium oxide layer disappear. Fig.13 This shows that the material defect repairing method of the present application can repair defects in gallium oxide materials.

[0050] from Fig.14 It can be seen that there are interface defects between the aluminum oxide layer and the gallium oxide layer of the semiconductor device. The isostatic fluid medium of the present application can form three-dimensional pressure in the atomic spacing of the semiconductor material. When the O atoms in NiO are brought to the interface between the Al2O3 and β-Ga2O3 layers and the β-Ga2O3 layer by the isostatic fluid medium, the broken bonds between the Al2O3 layer and the β-Ga2O3 layer in the three-dimensional pressure environment can reform Al-O-Ga bonds, and O atoms fill the oxygen vacancies in the β-Ga2O3 layer to form Ga-O-Ga bonds, which shows that the method for repairing material defects of the present application can repair semiconductor device defects. It should be noted that semiconductor devices may also have other defects, such as body defects, surface defects, and point defects. It should be noted that the atoms in the materials of semiconductor devices can also be Ga, N, O, C, P, As, H, etc.

[0051] The embodiment of the present application provides a method for repairing material defects, the method comprising: placing an object to be repaired in a reaction container, injecting a fluid medium into the reaction container, the fluid medium at least covering the object to be repaired; adjusting the pressure and temperature in the reaction container so that the pressure in the reaction container reaches a preset pressure and the temperature reaches a preset temperature; standing for a preset time to perform isostatic pressure treatment on the object to be repaired, and repairing the defects of the object to be repaired using a fluid medium at a preset pressure and a preset temperature. The fluid medium is subjected to isostatic pressure treatment on the object to be repaired under a relatively low temperature and isostatic pressure environment to achieve accurate repair of the defects of the object to be repaired.

[0052] Embodiment 2: This embodiment provides a device for repairing material defects, which includes a reaction container, a pressure regulating device, and a temperature regulating device.

[0053] In this embodiment, the reaction container is used to contain the object to be repaired and the fluid medium.

[0054] In this embodiment, the object to be repaired includes at least one of the following: one or more layers of stacked biological materials, one or more layers of stacked organic materials, one or more layers of stacked first-generation semiconductor materials, one or more layers of stacked second-generation semiconductor materials, one or more layers of stacked third-generation semiconductor materials, and semiconductor heterojunctions. Among them, multiple layers are two layers and more than two layers. The object to be repaired can be a material with two layers stacked, or a material with more than two layers stacked; or a device formed by these materials.

[0055] It should be noted that biomaterials can be artificially synthesized biomaterials: such as metal alloys (stainless steel, titanium alloys, etc.), bioceramics (alumina, silicon nitride, etc.), biodegradable polymers (polylactic acid, polyglycolic acid, etc.) and polymer materials (polyurethane, polyethylene, etc.).

[0056] It should be noted that the organic material can be natural organic matter, such as rubber, natural resin and natural polymer compound, etc. It can also be synthetic organic matter, such as plastic, synthetic rubber, synthetic fiber and resin.

[0057] It should be noted that a heterojunction is an interface region formed by two or more thin films of different semiconductor materials being deposited in sequence on the same substrate.

[0058] It should be noted that the first generation of semiconductor materials mainly include silicon (Si) and germanium (Ge); the second generation of semiconductor materials mainly include compound semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP); the third generation of semiconductor materials mainly include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), zinc oxide (ZnO), diamond, aluminum nitride (AlN), etc.

[0059] In this embodiment, the object to be repaired includes a semiconductor device and a semiconductor material.

[0060] In this embodiment, the fluid medium includes fluid carbon dioxide.

[0061] It should be noted that fluid carbon dioxide has excellent fluidity and permeability, and can enter the defective positions of semiconductor multilayer materials under a relatively low temperature and isostatic pressure environment. The atoms at the defective positions are subjected to appropriate three-dimensional pressure, which can promote better bonding between mismatched atoms, thereby achieving the purpose of repairing the defects of semiconductor multilayer materials.

[0062] In this embodiment, the pressure regulating device is used to regulate the pressure in the reaction container so that the pressure in the reaction container reaches a preset pressure. The temperature regulating device is used to regulate the temperature in the reaction container so that the temperature in the reaction container reaches a preset temperature.

[0063] In this embodiment, the fluid medium is in a liquid state, a gas state or a supercritical state at a preset pressure and a preset temperature.

[0064] It should be noted that the supercritical state of a medium is characterized by a state in which the pressure and temperature of the medium simultaneously exceed its critical pressure and critical temperature. The diffusion coefficient of the medium in the supercritical state is high and has good solubility.

[0065] In this embodiment, the preset pressure is greater than 15 psi and less than or equal to 15000 psi, and the preset temperature is less than 400° C. It should be noted that the preset temperature can be any temperature less than 400° C., that is, one of the temperatures less than 400° C. can be selected as the preset temperature, such as 86° C., 350° C., etc., as long as it is less than 400° C., and the present invention does not make any limitation on this.

[0066] Exemplarily, the fluid medium creates a repair environment through lower temperature and pressure. After the medium enters the supercritical state, the temperature and pressure continue to rise, and the maximum temperature is less than 350°C and the maximum pressure is no more than 15,000 psi. In this way, the fluid medium can enter the internal defects of the semiconductor device. After three-dimensional pressure is formed between the atoms near the defect position and the atoms at the defect, the mismatched atoms can be better bonded to achieve precise repair of the defects of the semiconductor device.

[0067] It should be noted that semiconductor materials and semiconductor devices are under three-dimensional pressure at any position. This three-dimensional isostatic pressure environment can avoid the failure of materials and devices due to uneven material stress caused by a non-isostatic pressure environment.

[0068] It should be noted that when the pressure in the reaction container reaches the preset pressure and the temperature reaches the preset temperature, the temperature and pressure at each position of the object to be repaired in the reaction container are uniform.

[0069] It should be noted that the fluid medium only repairs the defective parts of the material to be repaired, and has no adverse effect on other non-defective parts. This is because semiconductor materials and devices are under three-dimensional pressure at any position. This three-dimensional isostatic pressure environment can avoid the failure of materials and devices caused by uneven material stress due to non-isostatic pressure environment.

[0070] In this embodiment, after the pressure in the reaction container reaches the preset pressure and the temperature reaches the preset temperature, the pressure regulating device maintains the preset pressure for a preset time, and the temperature regulating device maintains the preset temperature for a preset time, so as to perform isostatic pressing treatment on the object to be repaired, and repair the defects of the object to be repaired using a fluid medium at a preset pressure and a preset temperature.

[0071] It should be noted that the preset duration may be any duration. For example, the preset duration may be any duration between 30 minutes and 120 minutes.

[0072] It should be noted that the use of a fluid medium at a preset pressure and a preset temperature to repair defects in the object to be repaired can be as follows: the fluid medium at a preset pressure and a preset temperature enters the internal defects of the object to be repaired, and after a three-dimensional pressure is formed between the atoms near the defect position and the atoms at the defect, the mismatched atoms can be better bonded, thereby achieving precise repair of the defects in the object to be repaired.

[0073] In this embodiment, after the defects of the object to be repaired are repaired using a fluid medium at a preset pressure and a preset temperature, it is necessary to further determine whether the object to be repaired is qualified. Specifically, the electrical characteristics of the semiconductor device are tested to obtain initial performance parameters; the electrical characteristics of the repaired object to be repaired are tested to obtain final performance parameters; the initial performance parameters are compared with the final performance parameters to obtain a first comparison result; based on the first comparison result, it is determined whether the object to be repaired is qualified; or, the electrical characteristics of the repaired object to be repaired are tested to obtain final performance parameters; the final performance parameters are compared with a preset parameter threshold to obtain a second comparison result; based on the second comparison result, it is determined whether the object to be repaired is qualified.

[0074] It should be noted that the initial performance parameter may be any performance parameter obtained after the electrical characteristics test of the object to be repaired. For example, the initial performance parameter may be an initial threshold voltage and / or an initial on-state current.

[0075] It should be noted that the final performance parameter may be any performance parameter obtained after the electrical characteristics test of the repaired object. For example, the final performance parameter may be the final threshold voltage and / or the final on-state current.

[0076] Taking the on-state current as an example of the performance parameter, in actual application, determining whether the object to be repaired is qualified based on the first comparison result can be: when the initial on-state current is less than the final on-state current, it means that the performance of the object to be repaired has been improved after the repair, which is sufficient to indicate that the object to be repaired has been repaired to the required standard.

[0077] It should be noted that the preset parameter threshold may be any parameter threshold. Exemplarily, the preset parameter threshold may be a preset on-state current threshold.

[0078] Taking the on-state current as an example of the performance parameter, in actual application, determining whether the object to be repaired is qualified based on the second comparison result can be: when the final on-state current is greater than the preset on-state current threshold, it means that the performance of the object to be repaired has been improved after the repair, which is sufficient to indicate that the object to be repaired has been repaired and qualified.

[0079] The embodiment of the present application provides a device for repairing material defects, which includes a reaction vessel, a pressure regulating device, and a temperature regulating device. The reaction vessel is used to accommodate an object to be repaired and a fluid medium. The pressure regulating device is used to regulate the pressure in the reaction vessel so that the pressure in the reaction vessel reaches a preset pressure. The temperature regulating device is used to regulate the temperature in the reaction vessel so that the temperature in the reaction vessel reaches a preset temperature. After the pressure in the reaction vessel reaches the preset pressure and the temperature reaches the preset temperature, the pressure regulating device maintains the preset pressure for a preset time, and the temperature regulating device maintains the preset temperature for a preset time, so as to perform isostatic pressure treatment on the object to be repaired, and repair the defects of the object to be repaired by using a fluid medium at a preset pressure and a preset temperature, and the fluid medium is subjected to isostatic pressure treatment on the object to be repaired under a relatively low temperature and isostatic pressure environment, so as to achieve accurate repair of the defects of the object to be repaired.

[0080] The above specific examples are used to illustrate the present invention, which is only used to help understand the present invention and is not intended to limit the present invention. For those skilled in the art, according to the concept of the present invention, some simple deductions, modifications or substitutions can be made.

Claims

1. A method for repairing material defects, characterized in that: The method comprises: Placing the object to be repaired in a reaction container, and injecting a fluid medium into the reaction container, wherein the fluid medium at least covers the object to be repaired; Adjusting the pressure and temperature in the reaction container so that the pressure in the reaction container reaches a preset pressure and the temperature reaches a preset temperature; The object to be repaired is left to stand for a preset time to perform isostatic pressure treatment, and the defects of the object to be repaired are repaired by using the fluid medium at the preset pressure and the preset temperature.

2. The method according to claim 1, characterized in that The fluid medium includes fluid carbon dioxide.

3. The method according to claim 1 or 2, characterized in that The fluid medium is in a liquid state, a gaseous state or a supercritical state at the preset pressure and the preset temperature.

4. The method according to claim 1 or 2, characterized in that: The object to be repaired includes at least one of the following: One or more stacked layers of biological materials, one or more stacked layers of organic materials, one or more stacked layers of first generation semiconductor materials, one or more stacked layers of second generation semiconductor materials, one or more stacked layers of third generation semiconductor materials, and semiconductor heterojunctions.

5. The method according to claim 1 or 2, characterized in that: The preset pressure is greater than 15 psi and less than or equal to 15,000 psi, and the preset temperature is less than 400°C.

6. The method according to claim 1 or 2, characterized in that: The object to be repaired includes a semiconductor device; and the method further includes: Conducting an electrical characteristic test on the semiconductor device to obtain initial performance parameters; conducting an electrical characteristic test on the repaired object to be repaired to obtain final performance parameters; comparing the initial performance parameters with the final performance parameters to obtain a first comparison result; determining whether the object to be repaired is qualified based on the first comparison result; or, Conducting an electrical property test on the repaired object to obtain final performance parameters; comparing the final performance parameters with a preset parameter threshold to obtain a second comparison result; and determining whether the object to be repaired is qualified based on the second comparison result.

7. A device for repairing material defects, characterized in that: The device comprises: A reaction container, used for containing the object to be repaired and a fluid medium; A pressure regulating device, used to regulate the pressure in the reaction container so that the pressure in the reaction container reaches a preset pressure; A temperature regulating device, used to regulate the temperature in the reaction container so that the temperature in the reaction container reaches a preset temperature; After the pressure in the reaction container reaches the preset pressure and the temperature reaches the preset temperature, the pressure regulating device maintains the preset pressure for a preset time, and the temperature regulating device maintains the preset temperature for a preset time, so as to perform isostatic pressing on the object to be repaired, and repair the defects of the object to be repaired by using the fluid medium at the preset pressure and the preset temperature.

8. The device according to claim 7, characterized in that The fluid medium includes fluid carbon dioxide.

9. The device according to claim 7 or 8, characterized in that The object to be repaired includes at least one of the following: One or more stacked layers of biological materials, one or more stacked layers of organic materials, one or more stacked layers of first generation semiconductor materials, one or more stacked layers of second generation semiconductor materials, one or more stacked layers of third generation semiconductor materials, and semiconductor heterojunctions.

10. The device according to claim 7 or 8, characterized in that The preset pressure is greater than 15 psi and less than or equal to 15,000 psi, and the preset temperature is less than 400°C.

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